JP3727827B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP3727827B2
JP3727827B2 JP2000141914A JP2000141914A JP3727827B2 JP 3727827 B2 JP3727827 B2 JP 3727827B2 JP 2000141914 A JP2000141914 A JP 2000141914A JP 2000141914 A JP2000141914 A JP 2000141914A JP 3727827 B2 JP3727827 B2 JP 3727827B2
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor substrate
contact
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000141914A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001326353A (ja
JP2001326353A5 (enExample
Inventor
雅浩 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000141914A priority Critical patent/JP3727827B2/ja
Priority to TW090108948A priority patent/TWI285955B/zh
Priority to KR10-2001-0025564A priority patent/KR100391560B1/ko
Priority to US09/853,661 priority patent/US20010040255A1/en
Priority to CN011190094A priority patent/CN1218399C/zh
Priority to EP01111239A priority patent/EP1156532A3/en
Publication of JP2001326353A publication Critical patent/JP2001326353A/ja
Publication of JP2001326353A5 publication Critical patent/JP2001326353A5/ja
Application granted granted Critical
Publication of JP3727827B2 publication Critical patent/JP3727827B2/ja
Priority to US11/347,321 priority patent/US7271040B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP2000141914A 2000-05-15 2000-05-15 半導体装置 Expired - Lifetime JP3727827B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000141914A JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置
TW090108948A TWI285955B (en) 2000-05-15 2001-04-13 Semiconductor device
KR10-2001-0025564A KR100391560B1 (ko) 2000-05-15 2001-05-10 반도체장치
US09/853,661 US20010040255A1 (en) 2000-05-15 2001-05-14 Electrode contact section of semiconductor device
CN011190094A CN1218399C (zh) 2000-05-15 2001-05-15 绝缘栅双极晶体管
EP01111239A EP1156532A3 (en) 2000-05-15 2001-05-15 Electrode contact section of semiconductor device
US11/347,321 US7271040B2 (en) 2000-05-15 2006-02-06 Electrode contact section of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000141914A JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2001326353A JP2001326353A (ja) 2001-11-22
JP2001326353A5 JP2001326353A5 (enExample) 2005-07-07
JP3727827B2 true JP3727827B2 (ja) 2005-12-21

Family

ID=18648965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000141914A Expired - Lifetime JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置

Country Status (6)

Country Link
US (2) US20010040255A1 (enExample)
EP (1) EP1156532A3 (enExample)
JP (1) JP3727827B2 (enExample)
KR (1) KR100391560B1 (enExample)
CN (1) CN1218399C (enExample)
TW (1) TWI285955B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE10250575B4 (de) * 2002-10-30 2010-04-15 Infineon Technologies Ag IGBT mit monolithisch integrierter antiparalleler Diode
JP2005057235A (ja) 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
CN100461619C (zh) * 2004-12-24 2009-02-11 立积电子股份有限公司 功率放大器及其形成方法
JP2006210606A (ja) * 2005-01-27 2006-08-10 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2006228961A (ja) * 2005-02-17 2006-08-31 Toyota Central Res & Dev Lab Inc 半導体装置
DE102005032074B4 (de) * 2005-07-08 2007-07-26 Infineon Technologies Austria Ag Halbleiterbauelement mit Feldstopp
JP2008042013A (ja) * 2006-08-08 2008-02-21 Sanyo Electric Co Ltd 半導体装置の製造方法
DE102007057728B4 (de) * 2007-11-30 2014-04-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
WO2012042640A1 (ja) * 2010-09-30 2012-04-05 株式会社日立製作所 半導体装置
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9478646B2 (en) * 2011-07-27 2016-10-25 Alpha And Omega Semiconductor Incorporated Methods for fabricating anode shorted field stop insulated gate bipolar transistor
JP5979993B2 (ja) * 2012-06-11 2016-08-31 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔの製造方法
WO2015049788A1 (ja) * 2013-10-04 2015-04-09 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換器
JP2016201563A (ja) * 2016-07-26 2016-12-01 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔ
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
JPS6223170A (ja) 1985-07-23 1987-01-31 Nec Corp 電力用縦型電界効果トランジスタの製造方法
US5166770A (en) * 1987-04-15 1992-11-24 Texas Instruments Incorporated Silicided structures having openings therein
JPS6447066U (enExample) 1987-09-17 1989-03-23
JP2706120B2 (ja) * 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
EP0330122B1 (de) 1988-02-24 1995-10-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
EP0416805B1 (en) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor with voltage clamp
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
US5270230A (en) 1990-04-20 1993-12-14 Fuji Electric Co., Ltd. Method for making a conductivity modulation MOSFET
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH0661495A (ja) * 1992-08-07 1994-03-04 Hitachi Ltd 半導体装置及びその製法
JP2984478B2 (ja) * 1992-08-15 1999-11-29 株式会社東芝 伝導度変調型半導体装置及びその製造方法
JPH06318706A (ja) * 1993-03-08 1994-11-15 Fuji Electric Co Ltd 半導体装置
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
JPH0758322A (ja) 1993-08-13 1995-03-03 Toshiba Corp 半導体装置及びその製造方法
EP0696066A3 (en) * 1994-06-30 1998-06-24 Hitachi, Ltd. Semiconductor switching device and power converter
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
JP3488772B2 (ja) * 1996-01-16 2004-01-19 三菱電機株式会社 半導体装置
DE19710487A1 (de) * 1996-03-13 1997-09-18 Toshiba Kawasaki Kk Halbleitervorrichtung
DE19710731B4 (de) 1996-03-15 2006-02-16 Fairchild Korea Semiconductor Ltd., Puchon Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US5851857A (en) * 1996-09-04 1998-12-22 Ixys Corporation High voltage power MOS device
DE19731495C2 (de) * 1997-07-22 1999-05-20 Siemens Ag Durch Feldeffekt steuerbarer Bipolartransistor und Verfahren zu seiner Herstellung
KR100505562B1 (ko) * 1998-08-10 2005-10-26 페어차일드코리아반도체 주식회사 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
JP2003069019A (ja) 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
JP3984227B2 (ja) 2004-01-15 2007-10-03 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
KR100391560B1 (ko) 2003-07-12
TWI285955B (en) 2007-08-21
US20060125005A1 (en) 2006-06-15
EP1156532A2 (en) 2001-11-21
CN1218399C (zh) 2005-09-07
KR20010106231A (ko) 2001-11-29
CN1324111A (zh) 2001-11-28
US7271040B2 (en) 2007-09-18
EP1156532A3 (en) 2003-11-26
US20010040255A1 (en) 2001-11-15
JP2001326353A (ja) 2001-11-22

Similar Documents

Publication Publication Date Title
JP3727827B2 (ja) 半導体装置
US6168981B1 (en) Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices
JP3995219B2 (ja) ダイオードを内蔵した絶縁ゲートバイポーラトランジスタとその製造方法
US5068704A (en) Method of manufacturing semiconductor device
EP0137906A1 (en) Method for fabricating vertical NPN and lateral PNP transistors in the same semiconductor body
EP0345435B2 (en) Semiconductor device with a high breakdown voltage and method for its manufacture
JP2002305304A (ja) 電力用半導体装置
CN101170109A (zh) 半导体装置及其制造方法
JP2002305305A (ja) 半導体装置
US4370180A (en) Method for manufacturing power switching devices
JPH05347413A (ja) 半導体装置の製造方法
CN1079990C (zh) 制造垂直双极型晶体管的方法
US6448588B2 (en) Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode
JP2673943B2 (ja) Ｐ型領域に低抵抗オーム接点を形成する方法
US5223442A (en) Method of making a semiconductor device of a high withstand voltage
EP0233202A1 (en) MANUFACTURE OF A SEMICONDUCTOR DEVICE WITH BURIAL OXIDE.
KR940008566B1 (ko) 반도체장치의 제조방법
CN1362744A (zh) 半导体器件
JP3125112B2 (ja) 高電流密度を有するバイポーラパワー素子とファストダイオードの集積構造ならびに関連する製造プロセス
US6911715B2 (en) Bipolar transistors and methods of manufacturing the same
JPH09172167A (ja) 半導体装置
JPH0982955A (ja) 半導体装置の製法
JPH10335630A (ja) 半導体装置及びその製造方法
JPH11307657A (ja) 半導体集積回路
JPH05109748A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041101

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041101

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050411

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050419

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050719

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050725

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050927

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050929

R151 Written notification of patent or utility model registration

Ref document number: 3727827

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081007

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091007

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101007

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111007

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111007

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121007

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131007

Year of fee payment: 8

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term