CN101442008B - 绝缘栅半导体器件及其新型自对准制造方法 - Google Patents
绝缘栅半导体器件及其新型自对准制造方法 Download PDFInfo
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- CN101442008B CN101442008B CN2008101886495A CN200810188649A CN101442008B CN 101442008 B CN101442008 B CN 101442008B CN 2008101886495 A CN2008101886495 A CN 2008101886495A CN 200810188649 A CN200810188649 A CN 200810188649A CN 101442008 B CN101442008 B CN 101442008B
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- doped region
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- insulated gate
- isolating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 230000000717 retained effect Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 230000008901 benefit Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02406086A EP1429391A1 (en) | 2002-12-10 | 2002-12-10 | Insulated gate semiconductor device and method of making the same |
EP02406086.5 | 2002-12-10 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380105403.2A Division CN1723570A (zh) | 2002-12-10 | 2003-12-09 | 绝缘栅半导体器件及其新型自对准制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101442008A CN101442008A (zh) | 2009-05-27 |
CN101442008B true CN101442008B (zh) | 2011-04-20 |
Family
ID=32319732
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380105403.2A Pending CN1723570A (zh) | 2002-12-10 | 2003-12-09 | 绝缘栅半导体器件及其新型自对准制造方法 |
CN2008101886495A Expired - Lifetime CN101442008B (zh) | 2002-12-10 | 2003-12-09 | 绝缘栅半导体器件及其新型自对准制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380105403.2A Pending CN1723570A (zh) | 2002-12-10 | 2003-12-09 | 绝缘栅半导体器件及其新型自对准制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7224008B2 (zh) |
EP (2) | EP1429391A1 (zh) |
JP (1) | JP2006509355A (zh) |
CN (2) | CN1723570A (zh) |
AU (1) | AU2003283173A1 (zh) |
WO (1) | WO2004053998A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098530A (ja) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
US20100314695A1 (en) * | 2009-06-10 | 2010-12-16 | International Rectifier Corporation | Self-aligned vertical group III-V transistor and method for fabricated same |
JP6072432B2 (ja) * | 2012-05-15 | 2017-02-01 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1156905A (zh) * | 1995-12-05 | 1997-08-13 | 三星电子株式会社 | 绝缘栅双极晶体管 |
US5843796A (en) * | 1995-09-11 | 1998-12-01 | Delco Electronics Corporation | Method of making an insulated gate bipolar transistor with high-energy P+ im |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211955A (ja) * | 1986-03-12 | 1987-09-17 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS62229977A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 導電変調型mosfetの製造方法 |
JPH0194672A (ja) * | 1987-10-07 | 1989-04-13 | Nissan Motor Co Ltd | 縦形mosfet |
JPH02106073A (ja) * | 1988-10-15 | 1990-04-18 | Fuji Electric Co Ltd | 伝導度変調型mosfetの製造方法 |
US5234851A (en) * | 1989-09-05 | 1993-08-10 | General Electric Company | Small cell, low contact assistance rugged power field effect devices and method of fabrication |
US5703383A (en) * | 1995-04-11 | 1997-12-30 | Kabushiki Kaisha Toshiba | Power semiconductor device |
WO2001091191A1 (fr) * | 2000-05-22 | 2001-11-29 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur |
-
2002
- 2002-12-10 EP EP02406086A patent/EP1429391A1/en not_active Withdrawn
-
2003
- 2003-12-09 WO PCT/CH2003/000809 patent/WO2004053998A1/en active Application Filing
- 2003-12-09 JP JP2004557736A patent/JP2006509355A/ja active Pending
- 2003-12-09 EP EP03775035A patent/EP1570527A1/en not_active Withdrawn
- 2003-12-09 CN CN200380105403.2A patent/CN1723570A/zh active Pending
- 2003-12-09 CN CN2008101886495A patent/CN101442008B/zh not_active Expired - Lifetime
- 2003-12-09 US US10/537,834 patent/US7224008B2/en not_active Expired - Lifetime
- 2003-12-09 AU AU2003283173A patent/AU2003283173A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5843796A (en) * | 1995-09-11 | 1998-12-01 | Delco Electronics Corporation | Method of making an insulated gate bipolar transistor with high-energy P+ im |
CN1156905A (zh) * | 1995-12-05 | 1997-08-13 | 三星电子株式会社 | 绝缘栅双极晶体管 |
Non-Patent Citations (2)
Title |
---|
JP昭62-211955A 1987.09.17 |
JP昭62-229977A 1987.10.08 |
Also Published As
Publication number | Publication date |
---|---|
EP1429391A1 (en) | 2004-06-16 |
AU2003283173A1 (en) | 2004-06-30 |
US7224008B2 (en) | 2007-05-29 |
CN1723570A (zh) | 2006-01-18 |
WO2004053998A1 (en) | 2004-06-24 |
CN101442008A (zh) | 2009-05-27 |
EP1570527A1 (en) | 2005-09-07 |
JP2006509355A (ja) | 2006-03-16 |
US20060022261A1 (en) | 2006-02-02 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210524 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: Asea Brown Boveri Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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CX01 | Expiry of patent term | ||
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Granted publication date: 20110420 |