CN1207718C - 容易控制数据写入电流的薄膜磁性体存储器 - Google Patents

容易控制数据写入电流的薄膜磁性体存储器 Download PDF

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Publication number
CN1207718C
CN1207718C CNB011220864A CN01122086A CN1207718C CN 1207718 C CN1207718 C CN 1207718C CN B011220864 A CNB011220864 A CN B011220864A CN 01122086 A CN01122086 A CN 01122086A CN 1207718 C CN1207718 C CN 1207718C
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write
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CNB011220864A
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Chinese (zh)
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CN1349226A (zh
Inventor
日高秀人
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Renesas Electronics Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1697—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB011220864A 2000-10-17 2001-05-21 容易控制数据写入电流的薄膜磁性体存储器 Expired - Fee Related CN1207718C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP316867/2000 2000-10-17
JP2000316867A JP4726290B2 (ja) 2000-10-17 2000-10-17 半導体集積回路
JP316867/00 2000-10-17

Publications (2)

Publication Number Publication Date
CN1349226A CN1349226A (zh) 2002-05-15
CN1207718C true CN1207718C (zh) 2005-06-22

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CNB011220864A Expired - Fee Related CN1207718C (zh) 2000-10-17 2001-05-21 容易控制数据写入电流的薄膜磁性体存储器

Country Status (6)

Country Link
US (2) US6359805B1 (enExample)
JP (1) JP4726290B2 (enExample)
KR (1) KR100436669B1 (enExample)
CN (1) CN1207718C (enExample)
DE (1) DE10119499A1 (enExample)
TW (1) TW512336B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101329897B (zh) * 2007-06-18 2010-12-08 台湾积体电路制造股份有限公司 编程存储器单元的方法

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JP4667594B2 (ja) 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2002270790A (ja) * 2000-12-27 2002-09-20 Toshiba Corp 半導体記憶装置
JP2002208682A (ja) * 2001-01-12 2002-07-26 Hitachi Ltd 磁気半導体記憶装置及びその製造方法
JP3812805B2 (ja) * 2001-01-16 2006-08-23 日本電気株式会社 トンネル磁気抵抗素子を利用した半導体記憶装置
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
JP5019681B2 (ja) 2001-04-26 2012-09-05 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4731041B2 (ja) * 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
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JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
JP4632625B2 (ja) * 2002-11-14 2011-02-16 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
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KR20040083934A (ko) 2003-03-25 2004-10-06 주식회사 하이닉스반도체 마그네틱 램의 형성방법
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CN101329897B (zh) * 2007-06-18 2010-12-08 台湾积体电路制造股份有限公司 编程存储器单元的方法

Also Published As

Publication number Publication date
KR100436669B1 (ko) 2004-06-22
US6542402B2 (en) 2003-04-01
JP4726290B2 (ja) 2011-07-20
KR20020030696A (ko) 2002-04-25
DE10119499A1 (de) 2002-04-25
TW512336B (en) 2002-12-01
US6359805B1 (en) 2002-03-19
US20020093849A1 (en) 2002-07-18
CN1349226A (zh) 2002-05-15
US20020044481A1 (en) 2002-04-18
JP2002124079A (ja) 2002-04-26

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