CN107852794A - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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Publication number
CN107852794A
CN107852794A CN201680043353.7A CN201680043353A CN107852794A CN 107852794 A CN107852794 A CN 107852794A CN 201680043353 A CN201680043353 A CN 201680043353A CN 107852794 A CN107852794 A CN 107852794A
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Prior art keywords
substrate
light emitting
light
display device
emitting diode
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Granted
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CN201680043353.7A
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CN107852794B (zh
Inventor
竹谷元伸
金荣现
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Priority to CN201911394786.9A priority Critical patent/CN111028715A/zh
Priority to CN201911319466.7A priority patent/CN111048463A/zh
Publication of CN107852794A publication Critical patent/CN107852794A/zh
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Publication of CN107852794B publication Critical patent/CN107852794B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract

本发明的显示装置可以包括：第一基板，包括有规律地布置的多个发光二极管；第二基板，包括TFT面板部，所述薄膜晶体管面板部包括驱动所述发光二极管的多个薄膜晶体管(TFT)，其中，所述第一基板及第二基板以彼此的一面相面对的方式结合，从而所述各发光二极管与各TFT电连接。根据本发明，由于可以使用利用氮化物半导体的微型发光二极管构成显示装置，因此具有能够应用于可穿戴设备的高效率高分辨率，且具有功耗低的效果。

Description

显示装置及其制造方法
技术领域
本发明涉及一种显示装置及其制造方法，尤其涉及一种利用微型发光二极管的显示装置及其制造方法。
背景技术
发光二极管作为通过电子及空穴的复合而发光的无机半导体元件，最近应用于显示器、汽车灯、一般照明等多种领域。发光二极管具有寿命长、功耗低，且响应速度快的优点。利用这种发光二极管的发光装置作为光源应用于多种领域。
近来，智能电视及显示器倾向于使用薄膜电晶体液晶显示器(TFT-LCD)面板来再现色彩，并使用发光二极管作为用于色彩再现的背光光源。并且，近来，也有使用有机发光二极管(OLED)制造显示装置的情形。但是，对于TFT-LCD而言，由于使用一个发光二极管(LED)作为宽像素的光源，所以背光光源始终处于接通状态。因此，无论显示的画面亮或暗，功耗都是恒定的。虽然也有为了改善这点而将屏幕划分为多个区域控制明暗的显示装置，但由于将数千乃至数万像素作为一个单位而进行分割，所以很难在降低功耗的同时精密地调节明暗。另外，对于OLED而言，虽然通过技术发展在持续地降低功耗，但目前为止，相比于无机半导体器件LED，功耗非常大，所以效率性较低。
并且，对无源矩阵(PM)驱动方式的OLED而言，由于对具有大容量的有机电致发光(EL)器件进行脉幅调制(PAM：pulse amplifier modulation)控制，从而可能发生响应速度降低的问题，为了实现低占空比(duty)，通过脉冲调制(PWM：pulse width modulation)控制而进行高电流驱动，从而可能发生寿命减短的问题。并且，如果通过有源矩阵(AM)驱动方式驱动OLED，则由于需要将各像素连接TFT，所以生产费可能会增加，并且具有根据TFT特性而亮度不均匀的问题。
[现有技术文献]
日本公开专利第2015-500562(2015.01.05)
发明内容
技术问题
本发明要解决的课题是提供一种利用能够应用于可穿戴设备、智能电话或电视等的功耗低的微型发光二极管的显示装置及其制造方法。
本发明要解决的另一课题是提供一种功耗低且能够精密地调节明暗的显示装置及其制造方法。
技术方案
本发明提供一种显示装置包括：第一基板，包括有规律地布置的多个发光二极管；第二基板，包括薄膜晶体管面板部，所述薄膜晶体管面板部包括驱动所述发光二极管的多个薄膜晶体管，其中，所述第一基板及第二基板以彼此的一面相面对的方式结合，从而所述各发光二极管与各薄膜晶体管电连接。
另外，本发明提供一种显示装置的制造方法包括如下步骤：制造发光二极管部，使多个发光二极管有规律地排列；以及使制造出的所述发光二极管与薄膜晶体管面板部结合，其中，制造所述发光二极管部的步骤包括如下的步骤：使多个发光二极管以有规律地排列的方式形成于基板上；将所述多个发光二极管转印到具有伸缩性的伸缩基板；在平面上扩大所述伸缩基板，以扩大所述多个发光二极管之间的间距；以及，使通过所述伸缩基板而间距得到扩大的多个发光二极管中的一个以上与支撑基板结合。
有益效果
根据本发明，由于可以利用使用氮化物半导体的微型发光二极管构成显示装置，从而具有能够应用于可穿戴设备的高效率高分辨率，且具有功耗低的效果。
并且，由于利用具有具有伸缩性的基板制造，从而当利用微型发光二极管制造显示装置时，具有能够更方便地制造的效果。
附图说明
图1是图示根据本发明的第一实施例的显示装置的剖面图。
图2是图示根据发明的第一实施例的显示装置的发光二极管部的立体图。
图3及图4是用于说明根据本发明的第一实施例的显示装置的发光二极管部的制造方法的图。
图5是图示根据本发明的第二实施例的显示装置的剖面图。
图6是图示根据本发明的第三实施例的显示装置的剖面图。
图7是图示根据本发明的第四实施例的显示装置的剖面图。
图8是图示根据本发明的第五实施例的显示装置的剖面图。
符号说明
100：显示装置
110：发光二极管部 112：发光二极管
112a：蓝色发光二极管 112b：绿色发光二极管
112c：红色发光二极管
21：生长基板
23：n型半导体层 25：活性层
27：p型半导体层 31：n型电极
33：p型电极 35：壁部
114：支撑基板 116：透明电极
118：阻断部 120：绝缘层
122：第一连接电极 124：透明基板
125：白色荧光体膜 126：荧光体层
126b：绿色荧光体层 126c：红色荧光体层
126d：阻断层 126e：透明层
127：彩色滤光器 127a：蓝色光部
127b：绿色光部 127c：红色光部
127d：光阻断部 127e：透明部
128：保护基板 130：TFT面板部
132：面板基板 134：第二连接电极
150：各向异性导电膜 152：电极连接部
200：背光单元 260：第一驱动器
300：TFT-LCD面板部 310：第二驱动器
P：像素
S:粘接部 S1：第一粘接部
S2：第二粘接部 S3：第三粘接部
具体实施方式
根据本发明的一实施例的显示装置可以包括：第一基板，包括有规律地布置的多个发光二极管；第二基板，包括TFT面板部，所述TFT面板部包括用于驱动所述发光二极管的多个薄膜晶体管(TFT)，其中，所述第一基板及第二基板以各自的一面相面对的方式结合，从而所述各发光二极管可以与各TFT电连接。
所述第一基板可以包括：支撑基板；多个蓝色发光二极管，排列于所述支撑基板上部；多个绿色发光二极管，排列于所述支撑基板上部，并与所述多个蓝色发光二极管相邻排列；以及多个红色发光二极管，排列于所述支撑基板上部，并与所述多个蓝色发光二极管及多个绿色发光二极管中的任意一个相邻排列。
并且，所述多个蓝色发光二极管、多个绿色发光二极管及多个红色发光二极管可以分别包括：n型半导体层；p型半导体层；活性层，夹设于所述n型半导体层与p型半导体层之间；n型电极，结合于所述n型半导体层；p型电极，结合于所述p型半导体层；以及壁部，形成为包围所述p型电极。
并且，所述显示装置还可以包括：第一粘接部，使所述多个蓝色发光二极管结合于所述支撑基板；第二粘接部，使所述多个绿色发光二极管结合于所述支撑基板；以及第三粘接部，使所述多个红色发光二极管结合于所述支撑基板，其中，所述第一粘接部至第三粘接部具有互不相同的温度的熔点。
并且，所述显示装置还可以包括：各向异性导电膜，使所述第一基板及所述第二基板电结合。
在此，所述多个发光二极管可以是发出蓝色光的蓝色发光二极管，所述显示装置还可以包括发出所述蓝色光的蓝色光部、将所述蓝色光波长转换为绿色光而发出的绿色光部以及将所述蓝色光波长转换为红色光而发出的红色光部中的任意一个以上。
并且，所述多个发光二极管可以包括发出蓝色光的蓝色发光二极管以及发出红色光的红色发光二极管，所述显示装置还可以包括波长转换部，所述波长转换部包括发出所述蓝色光的蓝色光部、将所述蓝色光波长转换为绿色光而发出的绿色光部以及发出所述红色光的红色光部中的任意一个以上。
此时，所述波长转换部可以形成于第三基板，为了实现针对从所述多个发光二极管发出的光的波长转换，所述第一基板及第三基板可以结合。并且，所述绿色光部及红色光部可以包括荧光体，所述绿色光部所包括的荧光体可以为氮化物系荧光体，所述红色光部所包括的荧光体可以为氮化物系荧光体或氟化物荧光体(KSF)。
并且，所述第一基板至第三基板中的任意一个以上可以是透明基板或者非透明柔性基板。
并且，所述多个发光二极管可以为蓝色发光二极管，且还可以包括：白色荧光体部，将从所述蓝色光发光二极管发出的蓝色光波长转换为白色光；以及彩色滤光器，包括使从所述白色荧光体部发出的白色光中的蓝色光通过的蓝色光部、使从所述白色荧光体部发出的白色光中的绿色光通过的绿色光部以及使从所述白色荧光体部发出的白色光中的红色光通过的红色光部。
并且，所述发光二极管可以包括：n型半导体层；p型半导体层；以及活性层，夹设于所述n型半导体层与p型半导体层之间，并且，在所述p型半导体层上可形成有壁部。
另外，根据本发明的一实施例的显示装置制造方法可以包括如下步骤：制造发光二极管部，使多个发光二极管有规律地排列；以及使制造出的所述发光二极管与薄膜晶体管面板部结合，其中，制造所述发光二极管部的步骤包括如下的步骤：使多个发光二极管以有规律地排列的方式形成于基板上；将所述多个发光二极管转印到具有伸缩性的伸缩基板；在平面上扩大所述伸缩基板，以扩大所述多个发光二极管之间的间距；以及，使通过所述伸缩基板而间距得到扩大的多个发光二极管中的一个以上与支撑基板结合。
在此，通过所述伸缩基板而扩大的间距可以是所述发光二极管宽度的两倍以上。
并且，在使所述发光二极管与薄膜晶体管面板部结合的步骤中，可以利用各向异性导电膜而进行结合。
参照附图，对本发明的优选实施例进行更具体的说明。
图1是图示根据本发明的第一实施例的显示装置的剖面图，图2是图示根据发明的第一实施例的显示装置的发光二极管部的立体图。
如图1所示，根据本发明的第一实施例的显示装置100包括发光二极管部110、薄膜晶体管(TFT)面板部130及各向异性导电膜150。
参照图1及图2，发光二极管部110包括发光二极管112、支撑基板114、透明电极116、阻断部118、绝缘层120及第一连接电极122。
发光二极管112配备为多个，且多个发光二极管112在支撑基板114上有规律地排列。例如，多个发光二极管112可以如图2所示，排列为矩阵。在本实施例中，多个发光二极管112包括发出蓝色光的多个蓝色发光二极管112a、发出绿色光的多个绿色发光二极管112b以及发出红色光的多个红色发光二极管112c。多个蓝色发光二极管112a、多个绿色发光二极管112b及多个红色发光二极管112c分别相互交替地排列，且蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c以彼此相邻的状态排列。
在本实施例中，如图2所示，发光二极管部110在从外部施加的电源下可以将自身作为显示装置100而被驱动。即，通过发光二极管部110的发光二极管112的接通-断开组合能够再现图像，并且无需专门的液晶显示屏(LCD)。因此，包括一个发光二极管112的区域在显示装置100中可以利用为一个子像素(sub pixel)。在发光二极管部110中，一个子像素的大小如图2所示地可以形成为相对大于布置于子像素内的发光二极管112的大小。
再次参照图1，一个发光二极管112包括n型半导体层23、活性层25、p型半导体层27、n型电极31、p型电极33及壁部35。n型半导体层23、活性层25及p型半导体层27可以包括III-V族系列的化合物半导体。例如，可以包括如(Al、Ga、In)N等氮化物半导体。此时，n型半导体层23与p型半导体层27的位置可以彼此交换。
n型半导体层23可以包括n型杂质(例如，Si)，p型半导体层27可以包括p型杂质(例如，Mg)。活性层25可以夹设于n型半导体层23与p型半导体层27之间，并包括多量子阱结构(MQW)，且可以以能够发出所期望的波长的光的方式确定组成比。
并且，包括n型半导体层23、活性层25及p型半导体层27的发光结构体可以与垂直型发光二极管112相似地形成。因此，在n型半导体层23的外表面可以形成有n型电极31，并且在p型半导体层27的外表面可以形成有p型电极33。
并且，如图1所示，在本实施例中，为了使形成为类似垂直型的发光二极管112结合于支撑基板114的透明电极116，在p型电极33与透明电极116之间可以形成有粘接部S，且可以形成壁部35，以防止粘接部S从p型电极33与透明电极116之间向外部脱离。
壁部35可以以使p型电极33在p型半导体层27上暴露的方式覆盖p型电极33的一部分而形成，且如图所示，可以形成为多个层。壁部35可以包括第一层及第二层，并且可以以如下方式形成：包括SiN的第一层以覆盖p型电极33的一部分的方式形成于p型半导体层27上，接着，包括SiO2的第二层形成于第一层上。此时，第二层可以形成为比第一层的厚度厚，且可以形成为比第一层薄。
支撑基板114是用于贴装多个发光二极管112的基板，可以是绝缘性基板、导电性基板或者印刷电路板等。例如，基板114可以为蓝宝石基板、氮化镓基板、玻璃基板、碳化硅基板、硅基板、金属基板及陶瓷基板中的一个。并且，根据需求，在支撑基板114上部也可以形成能够与多个发光二极管112电连接的多个导电性图案，或者在其内部形成电路图案。并且，支撑基板114可以利用柔性基板。
透明电极116可以形成于支撑基板114上，并与发光二极管112的p型电极33电连接。在本实施例中，透明电极116可以在支撑基板114上形成为多个，且在一个透明电极116上可以结合有一个发光二极管112，根据需求，在一个透明电极116上也可以结合有多个发光二极管112。并且，多个透明电极116可以在支撑基板114上以相互隔开的状态布置。并且，作为一例，透明电极116可以利用ITO等。
阻断部118形成于支撑基板114上，且配备为多个。阻断部118使从发光二极管112发出的光只可以通过透明电极116向外部发出，且起到防止与从相邻的其他发光二极管112发出的光发生混色的作用。因此，阻断部118可以形成于相互隔开布置的透明电极116之间，且根据需求可以形成为覆盖透明电极116的一部分。在本实施例中，阻断部118可以利用铬(Cr)。
绝缘层120形成为包围发光二极管112，且形成为覆盖与发光二极管112结合的面中的被暴露的面。因此，绝缘层120可以形成为覆盖阻断部118的一部分。由于绝缘层120形成为包围发光二极管112，所以发光二极管112的n型半导体层23及n型电极31可以通过绝缘层120被暴露。
第一连接电极122可以形成为覆盖绝缘层120，且可以形成为覆盖未被绝缘层120覆盖的n型半导体层23及n型电极31。因此，第一连接电极122可以与n型半导体层23电连接。
TFT面板部130包括面板(panel)基板132及第二连接电极134，并与发光二极管部110结合，且配备为向发光二极管部110供应电源。并且，TFT面板部130可以通过控制向发光二极管部110供应的电源而使发光二极管部110所包括的多个发光二极管112中的仅一部分发光。
面板基板132可以在其内部形成TFT驱动电路。TFT驱动电路可以是用于驱动有源矩阵(AM：active matrix)的电路，或者是用于驱动无源矩阵(PM：passive matrix)的电路。
第二连接电极134可以与面板基板132的TFT驱动电路电连接，并与发光二极管部110的第一连接电极122电连接。因此，通过TFT驱动电路供应的电源可以通过第一连接电极122及第二连接电极134而被供应至各发光二极管112。此时，第二连接电极134可以被独立的保护层所覆盖，且保护层可以包括SiNx。
各向异性导电膜(anisotropic conductive film)150配备为使发光二极管部110与TFT面板部130相互电连接。各向异性导电膜150包括具有绝缘性的粘接性有机材料，且在内部均匀地分散有用于电连接的导电性粒子。并且，各向异性导电膜150具有如下的性质：虽然在厚度方向上具有导电性，但在面方向具有绝缘性。并且，由于具有粘接性，所以能够使需要电连接的发光二极管部110与TFT面板部接合。尤其，可以有利于接合如ITO等难以在高温下焊接的电极。
若同上所述，利用各向异性导电膜150而使发光二极管部110与TFT面板部结合，则发光二极管部110的第一连接电极122与TFT面板部130的第二连接电极134相互电连接，从而可以形成电极连接部152。
图3及图4是用于说明根据本发明的第一实施例的显示装置100的发光二极管部110的制造方法的图。
参照图3及图4，对制造本发明的发光二极管部110的工序进行说明。首先，如图3a所示，在生长基板上使n型半导体层23、活性层25及p型半导体层27依次生长。然后，在生长成的p型半导体层27上形成p型电极33。p型电极33可以形成为如下：多个p型电极33以彼此隔开预定距离的状态形成，使得在每一个发光二极管112上能够分别形成有一个p型电极33。
参照图3b，在形成有p型电极33的状态下，在p型半导体层27上形成臂部35。壁部35可以形成为两个层，第一层可以包括SiN而形成为覆盖p型电极33的一部分并使整个p型半导体层27被覆盖。然后，第二层包括SiO2，并形成于第一层上。此时，第二层可以形成为比第一层厚，且形成于第一层上的未形成p型电极33的区域。
参照图3c，同上所述，在形成有壁部35的状态下，使经生长的半导体层与第一基板结合。此时，以使壁部35的第二层与第一基板结合的方式结合。第一基板可以是与支撑基板114相同的基板，且在本实施例中，可以利用蓝宝石基板。
参照图3d，可以在结合于第一基板的状态下去除形成于半导体层上部的生长基板(激光剥离LLO：Laser Lift Off)，并且在此状态下，可以进行蚀刻而分离为各个发光二极管112。此时，蚀刻为各发光二极管112的过程可以通过干式蚀刻实现。
参照图3e，在分离为各发光二极管112的状态下，在n型半导体层23上部形成n型电极31。在此，也可以在分离为各个发光二极管112前预先形成n型电极31。然后，如图3f所示，使发光二极管112与第二基板结合，以使所形成的n型电极31结合于第二基板，接着，去除第一基板。此时，第二基板可以是与第一基板相同种类的基板。
然后，如图3g所示，以使壁部35结合于第三基板的方式使各发光二极管112与第三基板结合，，接着，去除第二基板。此时，第三基板可以是能够沿着面方向伸缩的伸缩片。因此，如图3h所示，可以拉伸具有伸缩性的第三基板而扩展各发光二极管112之间的距离。
在如上所述地扩展各发光二极管112之间的距离的状态下，如图3i所示，以使n型电极31结合于第四基板的方式使各发光二极管112与第四基板结合。因此，能够通过具有伸缩性的第三基板而维持各发光二极管112之间的隔开的距离。此时，第四基板可以包括具有柔性的基底(base)以及形成于基底上的粘接层。
如图3j所示，使如上所述地在第四基板上排列的多个发光二极管112与支撑基板结合，并且在支撑基板114上，粘接部S可以形成于将要布置多个发光二极管112的位置。此时处于如下的状态：在透明电极161与阻断部118形成于支撑基板114上的状态下，粘接部S形成于用于贴装发光二极管112的位置。因此，即使将结合于第四基板的多个发光二极管112全部转印至支撑基板114上，也能够仅在支撑基板114的形成有粘接部S的位置转印有发光二极管112。
参照图3k，可以施加外力，以在结合于第四基板的发光二极管112中，仅使在支撑基板114上形成有粘接部S的位置所对应的发光二极管112结合于支撑基板114。因此，如图3l所示，能够仅在形成有粘接部S的位置结合有发光二极管112。
并且，虽然在本实施例中未专门图示，但如图3k所示，当在排列有多个发光二极管112的第四基板上仅选择性地对期望的发光二极管112施加外力，从而使其结合于支撑基板114时，可以不利用具有伸缩性的第三基板。即，代替如图3f所示的第二基板而利用柔性的第四基板的状态下，如图3k所示，可以仅对想要结合于支撑基板114的发光二极管112施加外力而使该发光二极管112与支撑基板114结合。
在本实施例中，针对如图3l所示的将发光二极管112贴装到支撑基板114的情形，参照图4所示的附图，对将蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c分别贴装到支撑基板114的情形进行说明。此时，制造蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c的工序与图3a至图3i的工序相同。
图4a同图3j，图示了粘接部S形成于支撑基板114的情形，在图4a中，粘接部S形成于蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c所分别结合的所有位置。此时，粘接部S可以被区分为第一粘接部至第三粘接部S1、S2、S3。第一粘接部S1为了结合蓝色发光二极管112a而配置，第二粘接部S2为了结合绿色发光二极管112b而配置。并且，第三粘接部S3为了结合红色发光二极管112c而配置。
第一粘接部至第三粘接部S1、S2、S3各自的键合温度可以彼此不同，且第一粘接部S1的键合温度最高，第三粘接部S3的键合温度最低。例如，第一粘接部S1利用AgSn，从而键合的温度约为230℃，第二粘接部S2利用ZnSn，从而键合的温度约为198℃。并且，第三粘接部S3利用In，从而键合的温度约为157℃。如此第一粘接部至第三粘接部S1、S2、S3的键合温度不同是因为被接合到各粘接部S的发光二极管112的顺序各不相同。
由于蓝色发光二极管112a最先结合于支撑基板114，因此第一粘接部S1的键合温度最高。由于第一粘接部S1的键合温度高于第二粘接部S2及第三粘接部S3的键合温度，所以在第二粘接部S2及第三粘接部S3粘接的期间内第一粘接部S1能够维持键合的状态。
如上所述，如图4a所示，在第一粘接部至第三粘接部S1、S2、S3分别形成于支撑基板114的状态下，如图4b所示，在支撑基板114上部的对应位置布置形成有蓝色发光二极管112a的第四基板，并使蓝色发光二极管112a与支撑基板114结合。此时，对形成于第四基板的蓝色发光二极管112a而言，相比于该蓝色发光二极管112a形成于生长基板的情形，相互之间的间距借助第三基板21c即伸缩基板而处于较宽的状态。因此，蓝色发光二极管112a不会布置于与第二粘接部S2及第三粘接部S3对应的位置。然后，在蓝色发光二极管112a与第一粘接部S1接触的状态下，加热至约230℃之后降低温度，以使第一粘接部S1键合，从而在支撑基板114上结合蓝色发光二极管112a。
如上所述地在支撑基板114上结合了蓝色发光二极管112a的状态如同图示于图4c的状态。在此状态下，如图4d所示，在支撑基板114上部的对应位置布置形成有绿色发光二极管112b的第四基板，并使绿色发光二极管112b与支撑基板114结合。此时，形成于第四基板的绿色发光二极管112b同前文所述，相比于在生长基板形成有绿色发光二极管112b的情形，相互之间的间距处于较宽的状态。因此，即使在与形成于支撑基板114的第二粘接部S2对应的位置布置绿色发光二极管112b，也能够不与之前已结合的蓝色发光二极管112a发生干涉。在此状态下，使绿色发光二极管112b与第二粘接部S2接触，并加热至约198℃之后降低温度，以使第二粘接部S2键合。据此，能够在支撑基板114上结合绿色发光二极管112b。
如上所述地在支撑基板114上分别结合有蓝色发光二极管112a与绿色发光二极管112b的状态如同图示于图4e的状态。在此状态下，如图4f所示，在支撑基板114上部的对应位置布置形成有红色发光二极管112c的第四基板，并使红色发光二极管112c与支撑基板114结合。此时，形成于第四基板的红色发光二极管112c同样处于彼此之间的间距较宽的状态，因此，与已结合于支撑基板114上的蓝色发光二极管112a及绿色发光二极管112b之间可不发生干涉。在此状态下，可以使红色发光二极管112c与第三粘接部S3接触，并加热至约157℃之后降低温度，以使第三粘接部S3键合，从而在支撑基板114上结合红色发光二极管112c。如上所述地在支撑基板114上分别结合了蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c的状态如同图示于图4g的状态。
在此，分别形成于互不相同的第四基板的蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c之间的间距可以是各发光二极管112的宽度(幅度)的两倍以上的距离。如此，各发光二极管112在支撑基板114上保持两倍以上的间距隔开的状态下与支撑基板114结合，从而可以与其他发光二极管112之间不发生干涉。
再次参照图3m，图3m是对应图4g所示的平面图的剖面图。即，如图3m所示，可以在支撑基板114上分别结合蓝色发光二极管112a、绿色发光二极管112b及红色发光二极管112c。在此状态下，如图3n所示，绝缘层120可以形成为覆盖除了各发光二极管112的一部分之外的整个发光二极管112。绝缘层120形成为包围各发光二极管112且将透明电极116及阻断部118全部覆盖。因此，能够防止与各发光二极管112电连接的透明电极116暴露于外部。并且，各发光二极管112的n型半导体层23的上部及n型电极31可以暴露于绝缘层120上部。
如上所述，在在绝缘层120上部暴露有n型半导体层23及n型电极31的状态下，如图3o所示，第一连接电极122可以以覆盖n型半导体层23及n型电极31的方式形成于绝缘层120上部。因此，可以制造根据本实施例的发光二极管部110。
接下来，如图3p所示，可以利用各向异性导电膜而使制造出的发光二极管部110与TFT面板部130接合，进而制造如图1所示的根据本实施例的显示装置100。
图5是图示根据本发明的第二实施例的显示装置的剖面图。
如图5所示，根据本发明的第二实施例的显示装置100包括发光二极管部110、TFT面板部130及各向异性导电膜150。在对本发明的第二实施例进行说明时，省略与第一实施例的说明相同的说明。
发光二极管部110包括发光二极管112、透明电极116、绝缘层120、第一连接电极122、透明基板124、荧光体层126及保护基板128。
发光二极管112可以配备为多个，且利用发出蓝色光的蓝色发光二极管112a。蓝色发光二极管112a可以与透明电极116电连接，且在透明电极116之间可以形成有阻断部118。并且，在透明电极116的上部可以形成有透明基板124。透明基板124可以起到与第一实施例中的支撑基板114相同的作用。并且，同第一实施例，还可以在利用支撑基板114制造发光二极管部110之后，去除支撑基板114并再次形成透明基板124。
并且，在透明基板124上部可以形成有荧光体层126。荧光体层126可以布置成，绿色荧光体层126b、红色荧光体层126c及透明层126e中的一个分别位于各蓝色发光二极管112a的上部。并且，在绿色荧光体层126b、红色荧光体层126c及透明层126e之间可以形成有阻断层126d。绿色荧光体层126b可以对从蓝色发光二极管112a发出的蓝色光进行波长转换而发出绿色光，红色荧光体层126c可以对从蓝色发光二极管112a发出的蓝色光进行波长转换而发出红色光。并且，使透明层126e邻近于绿色荧光体层126b及红色荧光体层126c而形成，以使从蓝色发光二极管112a发出的蓝色光原样发出。因此，通过荧光体层126能够分别发出红色光、绿色光及蓝色光。
在荧光体层126上部可以形成有保护基板128。保护基板128可以保护荧光体层126不暴露于外部，且可以与透明基板124相同地利用透明材质形成。
图6是图示根据本发明的第三实施例的显示装置的剖面图。
如图6所示，根据本发明的第三实施例的显示装置100包括发光二极管部110、TFT面板部130及各向异性导电膜150。在对本发明的第三实施例进行说明时，省略与第一实施例的说明相同的说明。
发光二极管部110包括发光二极管112、透明电极116、阻断部118、白色荧光体膜125及彩色滤光器。
发光二极管112可以配备为多个，且与第二实施例相同，利用发出蓝色光的蓝色发光二极管112a。蓝色发光二极管112a可以与透明电极116电连接，且在透明电极116之间可以形成有阻断部118。并且，在透明电极116的上部可以形成有白色荧光体膜125。
白色荧光体膜125使从蓝色发光二极管112发出的蓝色光波长转换为白色光。为此，白色荧光体膜125可以包括绿色荧光体和红色荧光体。
并且，彩色滤光器127可以布置于白色荧光体膜125上部。彩色滤光器127可以形成为膜(film)的形状，且将通过白色荧光体膜125发出的白色光中包括的蓝色光、绿色光及红色光中的某一个保留而过滤另外两个。为此，彩色滤光器127可以包括对白色光进行滤光而使蓝色光通过的蓝色光部127a、对白色光进行滤光而使绿色光通过的绿色光部127b以及对白色光进行滤光而使红色光通过的红色光部127c。并且，彩色滤光器127还可以包括透明部127e，以能够使白色光原样发出。
蓝色光部127a、绿色光部127b、红色光部127c及透明部127e可以相邻布置，与此不同，在蓝色光部127a、绿色光部127b、红色光部127c及透明部127e之间还可以形成有光阻断部127d。
图7是图示根据本发明的第四实施例的显示装置的剖面图。
如图7所示，根据本发明的第四实施例的显示装置100包括发光二极管部110、TFT面板部130及各向异性导电膜150。在对本发明的第四实施例进行说明时，省略与第一实施例及第三实施例的说明相同的说明。
发光二极管部110包括发光二极管112、透明电极116、阻断部118、透明基板124、白色荧光体膜125及彩色滤光器。
发光二极管112可以配备为多个，且与第二实施例相同，利用发出蓝色光的蓝色发光二极管112a。蓝色发光二极管112a可以与透明电极116电连接，且在透明电极116之间可以形成有阻断部118。并且，在透明电极116的上部可以形成有透明基板124。
透明基板124可以起到与在第一实施例中的支撑基板114相同的作用，并且，与第一实施例相同，还可以在利用支撑基板114制造发光二极管部110后去除支撑基板114并再次形成透明基板124。
并且，在透明基板124上部可以形成有白色荧光体膜125，并且在白色荧光体膜125上形成有彩色滤光器127。白色荧光体膜125及彩色滤光器127与第三实施例中所述的白色荧光体膜及彩色滤光器相同，因此省略其说明。
图8是图示根据本发明的第五实施例的显示装置的剖面图。图8的(a)至图8的(f)是图示根据第五实施例的显示装置中利用具有伸缩性的伸缩片(SS：stretchable sheet)调整生长于生长基板的多个发光结构体之间的间距之后将其结合到支撑基板，进而制造显示装置的工序的剖面图。
根据本发明的第五实施例的显示装置与上述的其他实施例相同地包括发光结构体23、n型凸块31、p型凸块33、支撑基板37及波长转换部43。在对本实施例进行说明时，省略与上述的其他实施例相同的说明，参照图8，重点说明将在生长基板21上生长成的发光结构体23结合到支撑基板37的过程。
发光结构体23可以包括由于p型半导体层29及活性层27被局部去除而n型半导体层25被局部暴露的区域。在如上所述地暴露的n型半导体层25中可以布置有n型电极焊盘，并且在p型半导体层29中可以布置有p型电极焊盘。
生长基板21只要是能够使氮化物半导体层生长的基板就不受限制，且可以是绝缘性基板或导电性基板。例如，生长基板21可以是蓝宝石基板、硅基板、碳化硅基板、氮化铝基板或氮化镓基板。在本发明的第一实施例中，生长基板21可以利用蓝宝石基板，且作为能够使氮化物半导体层生长的生长面而可以包括C面。
上文中虽然对作为发光结构体23而利用倒装芯片型发光二极管的情形进行了说明，但是根据需求，也可以利用垂直型发光二极管或水平型发光二极管。
如图8的(a)所示，在生长基板21上生长有多个发光结构体23。此时，多个发光结构体23在生长基板21上以预定的图案排列而生长，且各发光结构体23以相互隔开而分离的状态生长。
如图8的(b)所示，将如上所述地生长于生长基板21的发光结构体23以倒置的状态结合到伸缩片SS的上部。然后，如图8的(c)所示，若多个发光结构体23结合于伸缩片SS，则利用激光剥离(LLO)等工序去除生长基板21。
接下来，如图8的(d)所示，由于伸缩片SS可以在平面上拉伸或收缩，据此，通过拉伸或收缩伸缩片SS来调节多个发光结构体23之间的间距。图8的(d)图示了通过拉伸伸缩片SS而使发光结构体23之间的间距变大的示例。在此，作为一例，伸缩片SS可以利用蓝片(blue sheet)等。
如上所述，伸缩片SS在被拉伸的状态下被倒置，从而发光结构体23结合于固定片FS。此状态如图8的(e)所示，若多个发光结构体23结合于固定片FS，则去除结合于多个发光结构体23上部的伸缩片SS。此时，由于伸缩片SS各部分可以在平面上均匀地伸缩，因此，多个发光结构体23之间的间距能够均匀地扩大。根据需求可以对此进行多种调节。固定片FS起到为了维持通过伸缩片SS调节间距后的多个发光结构体23之间的间距而固定各发光结构体23的位置的作用。
同上所述，若各发光结构体23结合于固定片FS，接下来，如图8的(f)所示，使各发光结构体23与支撑基板37结合，并去除固定片FS。此时，支撑基板37是形成有导电性图案35或布线电路等的基板，可以是一般印刷电路板(PCB)基板，可以是柔性基板，且也可以是如伸缩片SS等能够伸缩的伸缩性基板。
同上所述，由于可以利用伸缩片SS调节多个发光结构体23之间的间距，因此可以以预定程度扩大发光结构体23之间的间距，从而一次性地转移到支撑基板。因此，根据本发明的显示装置中利用的多个发光结构体23不仅可以用于小型可佩戴装置，也可以用于大型显示器。
如上所述，已通过参照所附附图的实施例而进行了针对本发明的具体的说明，但是在上述实施例中，仅仅举出本发明的优选示例并进行了说明，因此本发明不能被理解为局限于上述的实施例，本发明的权利保护范围应当被理解为权利要求书的范围以及其等同概念。

Claims (15)

1.一种显示装置，其中，包括：
第一基板，包括有规律地布置的多个发光二极管；
第二基板，包括薄膜晶体管面板部，所述薄膜晶体管面板部包括驱动所述发光二极管的多个薄膜晶体管，
其中，所述第一基板及第二基板以彼此的一面相面对的方式结合，从而所述各发光二极管与各薄膜晶体管电连接。
2.如权利要求1所述的显示装置，其中，所述第一基板包括：
支撑基板；
多个蓝色发光二极管，排列于所述支撑基板上部；
多个绿色发光二极管，排列于所述支撑基板上部，并与所述多个蓝色发光二极管相邻排列；以及，
多个红色发光二极管，排列于所述支撑基板上部，并与所述多个蓝色发光二极管及多个绿色发光二极管中的任意一个相邻排列。
3.如权利要求2所述的显示装置，其中，
所述多个蓝色发光二极管、多个绿色发光二极管及多个红色发光二极管分别包括：
n型半导体层；
p型半导体层；
活性层，夹设于所述n型半导体层与p型半导体层之间；
n型电极，结合于所述n型半导体层；
p型电极，结合于所述p型半导体层；以及
壁部，形成为包围所述p型电极。
4.如权利要求2所述的显示装置，其中，还包括：
第一粘接部，使所述多个蓝色发光二极管结合于所述支撑基板；
第二粘接部，使所述多个绿色发光二极管结合于所述支撑基板；以及
第三粘接部，使所述多个红色发光二极管结合于所述支撑基板，
其中，所述第一粘接部至第三粘接部具有互不相同的温度的熔点。
5.如权利要求1所述的显示装置，其中，还包括：
各向异性导电膜，使所述第一基板及所述第二基板电结合。
6.如权利要求1所述的显示装置，其中，
所述多个发光二极管是发出蓝色光的蓝色发光二极管，
所述显示装置还包括波长转换部，所述波长转换部包括发出蓝色光的蓝色光部、将所述蓝色光波长转换为绿色光而发出的绿色光部以及将所述蓝色光波长转换为红色光而发出的红色光部中的任意一个以上。
7.如权利要求1所述的显示装置，其中，
所述多个发光二极管包括发出蓝色光的蓝色发光二极管以及发出红色光的红色发光二极管，
所述显示装置还包括波长转换部，所述波长转换部包括发出所述蓝色光的蓝色光部、将所述蓝色光波长转换为绿色光而发出的绿色光部以及发出所述红色光的红色光部中的任意一个以上。
8.如权利要求6所述的显示装置，其中，
所述波长转换部形成于第三基板，
为了实现针对从所述多个发光二极管发出的光的波长转换，所述第一基板及第三基板结合。
9.如权利要求6所述的显示装置，其中，
所述绿色光部及红色光部包括荧光体，
所述绿色光部所包括的荧光体为氮化物系荧光体，
所述红色光部所包括的荧光体为氮化物系荧光体或氟化物荧光体。
10.如权利要求6所述的显示装置，其中，
所述第一基板至第三基板中的任意一个以上是透明基板或者非透明柔性基板。
11.如权利要求1所述的显示装置，其中，
所述多个发光二极管是蓝色发光二极管，
还包括：
白色荧光体部，将从所述蓝色光发光二极管发出的蓝色光波长转换为白色光；以及
彩色滤光器，包括使从所述白色荧光体部发出的白色光中的蓝色光通过的蓝色光部、使从所述白色荧光体部发出的白色光中的绿色光通过的绿色光部以及使从所述白色荧光体部发出的白色光中的红色光通过的红色光部。
12.如权利要求1所述的显示装置，其中，
所述发光二极管包括：n型半导体层；p型半导体层；以及活性层，夹设于所述n型半导体层与p型半导体层之间，
在所述p型半导体层上形成有壁部。
13.一种显示装置制造方法，其中，包括如下步骤：
制造发光二极管部，使多个发光二极管有规律地排列；以及
使制造出的所述发光二极管与薄膜晶体管面板部结合，
其中，制造所述发光二极管部的步骤包括如下的步骤：
使多个发光二极管以有规律地排列的方式形成于基板上；
将所述多个发光二极管转印到具有伸缩性的伸缩基板；
在平面上扩大所述伸缩基板，以扩大所述多个发光二极管之间的间距；以及，
使通过所述伸缩基板而间距得到扩大的多个发光二极管中的一个以上与支撑基板结合。
14.如权利要求13所述的显示装置制造方法，其中，
通过所述伸缩基板而扩大的间距是所述发光二极管宽度的两倍以上。
15.如权利要求13所述的显示装置制造方法，其中，
在使所述发光二极管与薄膜晶体管面板部结合的步骤中，利用各向异性导电膜而进行结合。
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