CN103828061B - 使用氩气稀释来沉积含硅层的方法 - Google Patents

使用氩气稀释来沉积含硅层的方法 Download PDF

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CN103828061B
CN103828061B CN201280045437.6A CN201280045437A CN103828061B CN 103828061 B CN103828061 B CN 103828061B CN 201280045437 A CN201280045437 A CN 201280045437A CN 103828061 B CN103828061 B CN 103828061B
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gas
silicon
substrate
layer
admixture
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CN103828061A (zh
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Q·王
W·王
Y·J·崔
S-M·赵
Y·崔
朴范洙
崔寿永
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Optics & Photonics (AREA)
CN201280045437.6A 2011-10-07 2012-09-24 使用氩气稀释来沉积含硅层的方法 Active CN103828061B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161544432P 2011-10-07 2011-10-07
US61/544,432 2011-10-07
US201261611532P 2012-03-15 2012-03-15
US61/611,532 2012-03-15
PCT/US2012/056928 WO2013052298A1 (en) 2011-10-07 2012-09-24 Methods for depositing a silicon containing layer with argon gas dilution

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CN103828061A CN103828061A (zh) 2014-05-28
CN103828061B true CN103828061B (zh) 2018-02-13

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US (1) US9287137B2 (https=)
JP (1) JP6204917B2 (https=)
KR (3) KR101912888B1 (https=)
CN (1) CN103828061B (https=)
TW (1) TWI550722B (https=)
WO (1) WO2013052298A1 (https=)

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JP6689140B2 (ja) * 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
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TWI648844B (zh) 2017-11-06 2019-01-21 財團法人工業技術研究院 薄膜電晶體及其製造方法
KR20190061872A (ko) * 2017-11-28 2019-06-05 주식회사 원익아이피에스 비정질 실리콘막의 형성 방법
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TWI699892B (zh) * 2018-09-21 2020-07-21 友達光電股份有限公司 電子裝置及其製造方法
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