TWI550722B - 於基板上形成矽層之方法、形成矽氧化物層之方法及具有其之金屬氧化物薄膜電晶體元件 - Google Patents

於基板上形成矽層之方法、形成矽氧化物層之方法及具有其之金屬氧化物薄膜電晶體元件 Download PDF

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TWI550722B
TWI550722B TW101135223A TW101135223A TWI550722B TW I550722 B TWI550722 B TW I550722B TW 101135223 A TW101135223 A TW 101135223A TW 101135223 A TW101135223 A TW 101135223A TW I550722 B TWI550722 B TW I550722B
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layer
gas
substrate
oxide
flow rate
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TW101135223A
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TW201320199A (zh
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王群華
王偉杰
崔永鎮
卓尚美
崔羿
朴範洙
崔秀英
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應用材料股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Optics & Photonics (AREA)
TW101135223A 2011-10-07 2012-09-26 於基板上形成矽層之方法、形成矽氧化物層之方法及具有其之金屬氧化物薄膜電晶體元件 TWI550722B (zh)

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US201161544432P 2011-10-07 2011-10-07
US201261611532P 2012-03-15 2012-03-15

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TW201320199A TW201320199A (zh) 2013-05-16
TWI550722B true TWI550722B (zh) 2016-09-21

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US (1) US9287137B2 (https=)
JP (1) JP6204917B2 (https=)
KR (3) KR101912888B1 (https=)
CN (1) CN103828061B (https=)
TW (1) TWI550722B (https=)
WO (1) WO2013052298A1 (https=)

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CN104538405B (zh) * 2015-01-04 2018-02-27 京东方科技集团股份有限公司 一种阵列基板及其制造方法和显示装置
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TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
JP6689140B2 (ja) * 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
WO2019066961A1 (en) * 2017-09-29 2019-04-04 Intel Corporation THIN FILM MULTILAYER REAR GRID LAYER TRANSISTOR
TWI648844B (zh) 2017-11-06 2019-01-21 財團法人工業技術研究院 薄膜電晶體及其製造方法
KR20190061872A (ko) * 2017-11-28 2019-06-05 주식회사 원익아이피에스 비정질 실리콘막의 형성 방법
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JP7130548B2 (ja) * 2018-07-30 2022-09-05 東京エレクトロン株式会社 成膜方法及び成膜装置
US10672797B2 (en) * 2018-09-30 2020-06-02 Chongqing Hkc Optoelectronics Technology Co., Ltd. Array substrate, method for fabricating array substrate and display
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TWI831926B (zh) * 2019-02-19 2024-02-11 美商應用材料股份有限公司 多晶矽襯墊
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