CN102077331B - 薄膜晶体管 - Google Patents

薄膜晶体管 Download PDF

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Publication number
CN102077331B
CN102077331B CN200980124705.1A CN200980124705A CN102077331B CN 102077331 B CN102077331 B CN 102077331B CN 200980124705 A CN200980124705 A CN 200980124705A CN 102077331 B CN102077331 B CN 102077331B
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semiconductor layer
layer
thin film
film transistor
region
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Expired - Fee Related
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CN200980124705.1A
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Chinese (zh)
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CN102077331A (zh
Inventor
伊佐敏行
神保安弘
手塚祐朗
大力浩二
宫入秀和
山崎舜平
广桥拓也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
CN200980124705.1A 2008-06-27 2009-06-22 薄膜晶体管 Expired - Fee Related CN102077331B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2008-169286 2008-06-27
JP2008169286 2008-06-27
JP2009-046433 2009-02-27
JP2009046433 2009-02-27
JP2009-129313 2009-05-28
JP2009129313 2009-05-28
PCT/JP2009/061795 WO2009157574A1 (en) 2008-06-27 2009-06-22 Thin film transistor

Publications (2)

Publication Number Publication Date
CN102077331A CN102077331A (zh) 2011-05-25
CN102077331B true CN102077331B (zh) 2014-05-07

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CN200980124705.1A Expired - Fee Related CN102077331B (zh) 2008-06-27 2009-06-22 薄膜晶体管

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US (1) US8637866B2 (enExample)
EP (1) EP2291856A4 (enExample)
JP (1) JP5448603B2 (enExample)
KR (1) KR101703511B1 (enExample)
CN (1) CN102077331B (enExample)
TW (1) TWI460863B (enExample)
WO (1) WO2009157574A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
JP5518366B2 (ja) * 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
CN102077354B (zh) 2008-06-27 2014-08-20 株式会社半导体能源研究所 薄膜晶体管、半导体装置及电子设备
JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5590868B2 (ja) * 2008-12-11 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
US7989325B2 (en) * 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
KR101650917B1 (ko) 2009-03-09 2016-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
US9312156B2 (en) * 2009-03-27 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5888802B2 (ja) 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
US8772627B2 (en) * 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5466933B2 (ja) * 2009-12-03 2014-04-09 株式会社ジャパンディスプレイ 薄膜トランジスタおよびその製造方法
TWI535028B (zh) 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
CN102834861B (zh) 2010-04-09 2016-02-10 株式会社半导体能源研究所 液晶显示设备和驱动该液晶显示设备的方法
US8830278B2 (en) 2010-04-09 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
KR20130044124A (ko) * 2010-05-10 2013-05-02 파나소닉 액정 디스플레이 주식회사 결정성 반도체막의 제조 방법, 결정성 반도체막을 갖는 기판, 박막 트랜지스터
US8884297B2 (en) 2010-05-14 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
KR101758297B1 (ko) 2010-06-04 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2011158948A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing power storage device
US8564529B2 (en) 2010-06-21 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
US9286848B2 (en) 2010-07-01 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
TWI606490B (zh) * 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
CN106057144B (zh) 2010-07-02 2019-03-12 株式会社半导体能源研究所 液晶显示装置及驱动液晶显示装置的方法
US8988337B2 (en) 2010-07-02 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
JP2012048220A (ja) 2010-07-26 2012-03-08 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその駆動方法
JP5948025B2 (ja) * 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
JP5825895B2 (ja) 2010-08-06 2015-12-02 株式会社半導体エネルギー研究所 液晶表示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643580B2 (en) 2010-08-31 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
KR20120044042A (ko) * 2010-10-27 2012-05-07 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN102096228B (zh) * 2010-12-17 2012-07-04 湖南创图视维科技有限公司 一种显示系统和显示方法
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2012111427A1 (en) 2011-02-16 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9035860B2 (en) 2011-02-16 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device
US8629445B2 (en) 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US8994763B2 (en) 2011-03-25 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US9024927B2 (en) 2011-06-15 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
US8988411B2 (en) 2011-07-08 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101925495B1 (ko) 2011-07-15 2018-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 구동 방법
KR20130010834A (ko) 2011-07-19 2013-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5998397B2 (ja) * 2011-10-25 2016-09-28 株式会社Ｊｏｌｅｄ 薄膜半導体装置及びその製造方法
KR20150011472A (ko) 2013-07-23 2015-02-02 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102245780B1 (ko) 2014-11-03 2021-04-29 삼성디스플레이 주식회사 레이저 결정화 시스템, 레이저 결정화방법 및 표시장치의 제조방법
KR102365963B1 (ko) * 2015-06-23 2022-02-23 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 갖는 액정 표시 장치
CN105826398A (zh) * 2016-06-15 2016-08-03 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及制作方法
CN105870203B (zh) * 2016-06-24 2019-05-10 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
CN109728098B (zh) * 2019-01-03 2022-05-17 合肥鑫晟光电科技有限公司 薄膜晶体管、传感器、检测方法、检测装置及检测系统
JP2021002633A (ja) * 2019-06-25 2021-01-07 日新電機株式会社 酸化物半導体の加工法方法及び薄膜トランジスタの製造方法
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11637175B2 (en) * 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
CN115458588A (zh) * 2022-09-23 2022-12-09 武汉华星光电技术有限公司 显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535979A2 (en) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JP2008124392A (ja) * 2006-11-15 2008-05-29 Sharp Corp 半導体装置、その製造方法及び表示装置

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5771126A (en) 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Semiamorhous semiconductor
JPS5892217A (ja) 1981-11-28 1983-06-01 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS5972781A (ja) 1982-10-20 1984-04-24 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS60160170A (ja) 1984-01-31 1985-08-21 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US5221631A (en) 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
JP2839529B2 (ja) 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
KR920010885A (ko) * 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH04266019A (ja) * 1991-02-20 1992-09-22 Canon Inc 成膜方法
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JPH05129608A (ja) 1991-10-31 1993-05-25 Sharp Corp 半導体装置
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6171674B1 (en) 1993-07-20 2001-01-09 Semiconductor Energy Laboratory Co., Ltd. Hard carbon coating for magnetic recording medium
JPH06326312A (ja) 1993-05-14 1994-11-25 Toshiba Corp アクティブマトリクス型表示装置
JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
TW303526B (enExample) 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JP2661594B2 (ja) * 1995-05-25 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US5920772A (en) 1997-06-27 1999-07-06 Industrial Technology Research Institute Method of fabricating a hybrid polysilicon/amorphous silicon TFT
US6372535B1 (en) * 1998-02-02 2002-04-16 Samsung Electronics Co., Ltd. Manufacturing method of a thin film transistor
JP4458563B2 (ja) * 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
JP2001007024A (ja) 1999-06-18 2001-01-12 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001102587A (ja) 1999-09-28 2001-04-13 Toshiba Corp 薄膜トランジスタおよびその製造方法ならびに半導体薄膜の製造方法
JP2001196598A (ja) * 1999-10-29 2001-07-19 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP3792589B2 (ja) * 2001-03-29 2006-07-05 富士通株式会社 半導体装置の製造方法
JP2002299235A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体薄膜形成方法及び薄膜半導体装置
JP4860055B2 (ja) * 2001-05-31 2012-01-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100421480B1 (ko) * 2001-06-01 2004-03-12 엘지.필립스 엘시디 주식회사 유기절연막의 표면처리 방법 및 그를 이용한박막트랜지스터 기판 제조방법
KR100436181B1 (ko) 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
US6841431B2 (en) * 2003-01-29 2005-01-11 Chunghwa Picture Tubes, Ltd. Method for reducing the contact resistance
CN100552893C (zh) * 2003-03-26 2009-10-21 株式会社半导体能源研究所 半导体装置及其制造方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI368774B (en) 2003-07-14 2012-07-21 Semiconductor Energy Lab Light-emitting device
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
JP5159021B2 (ja) 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1537938A3 (en) 2003-12-02 2009-02-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
KR100724485B1 (ko) * 2005-04-19 2007-06-04 엘지.필립스 엘시디 주식회사 액정표시장치의 박막트랜지스터 제조방법
JP4266019B2 (ja) 2005-08-30 2009-05-20 本田技研工業株式会社 射出成形ホットランナ金型の色替え装置
KR100722085B1 (ko) * 2005-09-12 2007-05-25 삼성전자주식회사 전기영동법으로 형성된 탄소나노튜브를 포함하는 태양 전지및 그 제조방법
KR100978260B1 (ko) * 2005-12-27 2010-08-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
JP5331389B2 (ja) 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
WO2009128522A1 (en) 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
JP5416460B2 (ja) 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
KR101635625B1 (ko) 2008-04-18 2016-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 그 제작 방법
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8049215B2 (en) 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
JP5518366B2 (ja) 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
CN102077354B (zh) 2008-06-27 2014-08-20 株式会社半导体能源研究所 薄膜晶体管、半导体装置及电子设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535979A2 (en) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JP2008124392A (ja) * 2006-11-15 2008-05-29 Sharp Corp 半導体装置、その製造方法及び表示装置

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