CN101916051B - 形成微电子结构的方法 - Google Patents
形成微电子结构的方法 Download PDFInfo
- Publication number
- CN101916051B CN101916051B CN201010110135.5A CN201010110135A CN101916051B CN 101916051 B CN101916051 B CN 101916051B CN 201010110135 A CN201010110135 A CN 201010110135A CN 101916051 B CN101916051 B CN 101916051B
- Authority
- CN
- China
- Prior art keywords
- composition
- layer
- base material
- complex
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004377 microelectronic Methods 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 65
- 239000002253 acid Substances 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000005647 linker group Chemical group 0.000 claims abstract 6
- 239000000126 substance Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 28
- 238000004132 cross linking Methods 0.000 claims description 19
- 239000004971 Cross linker Substances 0.000 claims description 14
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 11
- 150000002500 ions Chemical group 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- MVETVBHSYIYRCX-UHFFFAOYSA-I [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O MVETVBHSYIYRCX-UHFFFAOYSA-I 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- 229920005575 poly(amic acid) Polymers 0.000 claims description 3
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 150000001261 hydroxy acids Chemical group 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 125000006239 protecting group Chemical group 0.000 claims 2
- 239000003431 cross linking reagent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 description 24
- 229960000834 vinyl ether Drugs 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- -1 sulfonic acid oxime Chemical class 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000000825 pharmaceutical preparation Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 2
- XGWFJBFNAQHLEF-UHFFFAOYSA-N 9-anthroic acid Chemical compound C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 XGWFJBFNAQHLEF-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- 102100033806 Alpha-protein kinase 3 Human genes 0.000 description 2
- 101710082399 Alpha-protein kinase 3 Proteins 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 101710133529 Pterin-4-alpha-carbinolamine dehydratase 2 Proteins 0.000 description 2
- 102100026595 Pterin-4-alpha-carbinolamine dehydratase 2 Human genes 0.000 description 2
- 101710186910 Putative pterin-4-alpha-carbinolamine dehydratase 2 Proteins 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- SQNZJJAZBFDUTD-UHFFFAOYSA-N durene Chemical compound CC1=CC(C)=C(C)C=C1C SQNZJJAZBFDUTD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- RZZNBXFHCIIHNQ-UHFFFAOYSA-N 2-methylprop-2-enoic acid;naphthalene-1-carboxylic acid Chemical compound CC(=C)C(O)=O.C1=CC=C2C(C(=O)O)=CC=CC2=C1 RZZNBXFHCIIHNQ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 102100038954 60S ribosomal export protein NMD3 Human genes 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 101000603190 Homo sapiens 60S ribosomal export protein NMD3 Proteins 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940052303 ethers for general anesthesia Drugs 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 150000002240 furans Chemical group 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M sodium chloride Inorganic materials [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- WHLUQAYNVOGZST-UHFFFAOYSA-N tifenamil Chemical group C=1C=CC=CC=1C(C(=O)SCCN(CC)CC)C1=CC=CC=C1 WHLUQAYNVOGZST-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/14—Unsaturated ethers
- C07C43/164—Unsaturated ethers containing six-membered aromatic rings
- C07C43/166—Unsaturated ethers containing six-membered aromatic rings having unsaturation outside the aromatic rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31692—Next to addition polymer from unsaturated monomers
- Y10T428/31699—Ester, halide or nitrile of addition polymer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Architecture (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56632904P | 2004-04-29 | 2004-04-29 | |
| US60/566,329 | 2004-04-29 | ||
| US11/105,862 | 2005-04-14 | ||
| US11/105,862 US20050255410A1 (en) | 2004-04-29 | 2005-04-14 | Anti-reflective coatings using vinyl ether crosslinkers |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800132461A Division CN1981240B (zh) | 2004-04-29 | 2005-04-15 | 使用乙烯基醚交联剂的减反射涂层 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101916051A CN101916051A (zh) | 2010-12-15 |
| CN101916051B true CN101916051B (zh) | 2014-07-23 |
Family
ID=35309829
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010110135.5A Expired - Lifetime CN101916051B (zh) | 2004-04-29 | 2005-04-15 | 形成微电子结构的方法 |
| CN2005800132461A Expired - Lifetime CN1981240B (zh) | 2004-04-29 | 2005-04-15 | 使用乙烯基醚交联剂的减反射涂层 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800132461A Expired - Lifetime CN1981240B (zh) | 2004-04-29 | 2005-04-15 | 使用乙烯基醚交联剂的减反射涂层 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US20050255410A1 (https=) |
| EP (1) | EP1743219B1 (https=) |
| JP (2) | JP5972510B2 (https=) |
| KR (2) | KR101308191B1 (https=) |
| CN (2) | CN101916051B (https=) |
| TW (1) | TWI387612B (https=) |
| WO (1) | WO2005111719A2 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| US20070207406A1 (en) * | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| CN102981368B (zh) * | 2004-05-14 | 2015-03-04 | 日产化学工业株式会社 | 含有乙烯基醚化合物的形成防反射膜的组合物 |
| US7816071B2 (en) * | 2005-02-10 | 2010-10-19 | Az Electronic Materials Usa Corp. | Process of imaging a photoresist with multiple antireflective coatings |
| KR100662542B1 (ko) * | 2005-06-17 | 2006-12-28 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법 |
| KR100703007B1 (ko) * | 2005-11-17 | 2007-04-06 | 삼성전자주식회사 | 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법 |
| US20070117041A1 (en) * | 2005-11-22 | 2007-05-24 | Christoph Noelscher | Photosensitive coating for enhancing a contrast of a photolithographic exposure |
| US20070298176A1 (en) | 2006-06-26 | 2007-12-27 | Dipietro Richard Anthony | Aromatic vinyl ether based reverse-tone step and flash imprint lithography |
| US7914974B2 (en) * | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
| WO2008072624A1 (ja) | 2006-12-13 | 2008-06-19 | Nissan Chemical Industries, Ltd. | 低分子溶解促進剤を含むレジスト下層膜形成組成物 |
| US20090098490A1 (en) * | 2007-10-16 | 2009-04-16 | Victor Pham | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing |
| US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| KR101211325B1 (ko) * | 2007-10-30 | 2012-12-12 | 브레우어 사이언스 인코포레이션 | 광화상형성가능한 측쇄 폴리머 |
| US7976894B1 (en) * | 2007-11-13 | 2011-07-12 | Brewer Science Inc. | Materials with thermally reversible curing mechanism |
| US8133659B2 (en) | 2008-01-29 | 2012-03-13 | Brewer Science Inc. | On-track process for patterning hardmask by multiple dark field exposures |
| US9638999B2 (en) * | 2008-02-22 | 2017-05-02 | Brewer Science Inc. | Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography |
| JP5739325B2 (ja) * | 2008-04-23 | 2015-06-24 | ブルーワー サイエンス アイ エヌシー. | マイクロリソグラフィー用の感光性ハードマスク |
| US8257910B1 (en) * | 2008-06-24 | 2012-09-04 | Brewer Science Inc. | Underlayers for EUV lithography |
| US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
| JP5218762B2 (ja) * | 2008-12-12 | 2013-06-26 | 日産化学工業株式会社 | レジストパターンの形成方法 |
| US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
| EP2399169B1 (en) * | 2009-02-19 | 2019-04-17 | Brewer Science, Inc. | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
| US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
| US20110086312A1 (en) * | 2009-10-09 | 2011-04-14 | Dammel Ralph R | Positive-Working Photoimageable Bottom Antireflective Coating |
| JP5673960B2 (ja) * | 2009-12-16 | 2015-02-18 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物 |
| JP5708938B2 (ja) * | 2010-01-18 | 2015-04-30 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法 |
| KR20110112641A (ko) * | 2010-04-07 | 2011-10-13 | 한국과학기술연구원 | 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법 |
| US8685615B2 (en) | 2010-06-17 | 2014-04-01 | Nissan Chemical Industries, Ltd. | Photosensitive resist underlayer film forming composition |
| US8877430B2 (en) | 2010-08-05 | 2014-11-04 | Brewer Science Inc. | Methods of producing structures using a developer-soluble layer with multilayer technology |
| JP6035017B2 (ja) | 2010-10-04 | 2016-11-30 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 下層組成物および下層を像形成する方法 |
| JP5820676B2 (ja) * | 2010-10-04 | 2015-11-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 下層組成物および下層を像形成する方法 |
| JP2014507795A (ja) | 2010-12-27 | 2014-03-27 | ブルーワー サイエンス アイ エヌ シー. | 高度なパターン形成に必要な小型フィーチャのパターン形成プロセス |
| WO2013163100A1 (en) * | 2012-04-23 | 2013-10-31 | Brewer Science Inc. | Photosensitive, developer-soluble bottom anti-reflective coating material |
| US9348228B2 (en) * | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
| JP6119669B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
| JP6119667B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
| JP6135600B2 (ja) | 2013-06-11 | 2017-05-31 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
| JP6119668B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
| CN111133381B (zh) * | 2017-09-29 | 2024-02-13 | 富士胶片株式会社 | 着色感光性组成物及滤光器的制造方法 |
| KR102285555B1 (ko) * | 2018-06-12 | 2021-08-03 | 주식회사 엘지화학 | 코팅 조성물 및 이를 이용한 마이크로 전자 소자 제조용 포지티브형 패턴의 제조방법 |
| US11656550B2 (en) | 2020-09-01 | 2023-05-23 | Tokyo Electron Limited | Controlling semiconductor film thickness |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110653A (en) * | 1999-07-26 | 2000-08-29 | International Business Machines Corporation | Acid sensitive ARC and method of use |
| CN1288902A (zh) * | 1999-09-07 | 2001-03-28 | 现代电子产业株式会社 | 用于抗反射涂层的有机聚合物和其制备方法 |
| CN1463390A (zh) * | 2001-05-08 | 2003-12-24 | 希普利公司 | 光可成像组合物 |
| CN1484094A (zh) * | 2002-07-23 | 2004-03-24 | ���ǵ�����ʽ���� | 可溶于光致抗蚀剂显影液的有机底部抗反射组合物及使用该组合物的光刻和蚀刻方法 |
| CN1942826A (zh) * | 2004-03-25 | 2007-04-04 | Az电子材料美国公司 | 正性操作的可光成像的底部抗反射涂层 |
Family Cites Families (191)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4175175A (en) | 1963-07-16 | 1979-11-20 | Union Carbide Corporation | Polyarylene polyethers |
| USB392136I5 (https=) * | 1964-08-26 | |||
| US3561962A (en) * | 1966-09-01 | 1971-02-09 | Xerox Corp | Method of image reproduction by photo-polymerization and blushing |
| US3629036A (en) * | 1969-02-14 | 1971-12-21 | Shipley Co | The method coating of photoresist on circuit boards |
| JPS48891Y1 (https=) | 1969-03-10 | 1973-01-11 | ||
| US3682641A (en) * | 1970-03-23 | 1972-08-08 | Du Pont | Photoresist developer extender baths containing polyoxyalkylene ethers and esters and process of use |
| US3615615A (en) | 1970-04-13 | 1971-10-26 | Eastman Kodak Co | Photographic emulsions including reactive quaternary salts |
| US3833374A (en) * | 1970-07-14 | 1974-09-03 | Metalphoto Corp | Coloring of anodized aluminum |
| US3894163A (en) * | 1971-03-08 | 1975-07-08 | Western Electric Co | Additives to negative photoresists which increase the sensitivity thereof |
| US3856751A (en) | 1972-06-14 | 1974-12-24 | Eastman Kodak Co | Diacid-xanthylium ion polyester and photographic element comprised thereof |
| US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
| US3976524A (en) * | 1974-06-17 | 1976-08-24 | Ibm Corporation | Planarization of integrated circuit surfaces through selective photoresist masking |
| CA1077787A (en) * | 1975-11-21 | 1980-05-20 | National Aeronautics And Space Administration | Abrasion resistant coatings for plastic surfaces |
| DE2861696D1 (en) * | 1977-09-07 | 1982-04-29 | Ici Plc | Thermoplastic aromatic polyetherketones, a method for their preparation and their application as electrical insulants |
| JPS5471579A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Electron beam resist |
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| US4369090A (en) * | 1980-11-06 | 1983-01-18 | Texas Instruments Incorporated | Process for etching sloped vias in polyimide insulators |
| US4430419A (en) * | 1981-01-22 | 1984-02-07 | Nippon Telegraph & Telephone Public Corporation | Positive resist and method for manufacturing a pattern thereof |
| US4397722A (en) * | 1981-12-31 | 1983-08-09 | International Business Machines Corporation | Polymers from aromatic silanes and process for their preparation |
| EP0098922A3 (en) * | 1982-07-13 | 1986-02-12 | International Business Machines Corporation | Process for selectively generating positive and negative resist patterns from a single exposure pattern |
| US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
| US4526856A (en) * | 1983-05-23 | 1985-07-02 | Allied Corporation | Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents |
| US4996247A (en) * | 1984-02-10 | 1991-02-26 | General Electric Company | Enhancing color stability to sterilizing radiation of polymer compositions |
| JPS60262150A (ja) * | 1984-06-11 | 1985-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法 |
| DE3425063A1 (de) * | 1984-07-07 | 1986-02-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Maske fuer die roentgenlithographie |
| US4578328A (en) * | 1984-07-09 | 1986-03-25 | General Electric Company | Photopatternable polyimide compositions and method for making |
| US4683024A (en) * | 1985-02-04 | 1987-07-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Device fabrication method using spin-on glass resins |
| US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
| US4742152A (en) * | 1986-05-27 | 1988-05-03 | United Technologies Corporation | High temperature fluorinated polyimides |
| US5091047A (en) * | 1986-09-11 | 1992-02-25 | National Semiconductor Corp. | Plasma etching using a bilayer mask |
| US4808513A (en) * | 1987-04-06 | 1989-02-28 | Morton Thiokol, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
| US4927736A (en) * | 1987-07-21 | 1990-05-22 | Hoechst Celanese Corporation | Hydroxy polyimides and high temperature positive photoresists therefrom |
| JP2557898B2 (ja) * | 1987-07-31 | 1996-11-27 | 株式会社東芝 | 半導体装置 |
| US5137780A (en) * | 1987-10-16 | 1992-08-11 | The Curators Of The University Of Missouri | Article having a composite insulative coating |
| US4803147A (en) * | 1987-11-24 | 1989-02-07 | Hoechst Celanese Corporation | Photosensitive polyimide polymer compositions |
| US4845265A (en) * | 1988-02-29 | 1989-07-04 | Allied-Signal Inc. | Polyfunctional vinyl ether terminated ester oligomers |
| US4891303A (en) * | 1988-05-26 | 1990-01-02 | Texas Instruments Incorporated | Trilayer microlithographic process using a silicon-based resist as the middle layer |
| US5304626A (en) * | 1988-06-28 | 1994-04-19 | Amoco Corporation | Polyimide copolymers containing 3,3',4,4'-tetracarboxybiphenyl dianhydride (BPDA) moieties |
| KR910000832A (ko) * | 1988-06-28 | 1991-01-30 | 랄프 챨스 메더스트 | 인터레벨 유전체 및 기질 피복물용의 저유전상수 및 저수분흡수율을 갖는 폴리이미드 및 코폴리이미드 |
| DE3835737A1 (de) * | 1988-10-20 | 1990-04-26 | Ciba Geigy Ag | Positiv-fotoresists mit erhoehter thermischer stabilitaet |
| US5024922A (en) * | 1988-11-07 | 1991-06-18 | Moss Mary G | Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake |
| US5169494A (en) | 1989-03-27 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming method |
| US5057399A (en) | 1989-03-31 | 1991-10-15 | Tony Flaim | Method for making polyimide microlithographic compositions soluble in alkaline media |
| US5198153A (en) * | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
| US5246782A (en) * | 1990-12-10 | 1993-09-21 | The Dow Chemical Company | Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings |
| KR950011927B1 (ko) | 1989-12-07 | 1995-10-12 | 가부시끼가이샤 도시바 | 감광성 조성물 및 수지봉지형 반도체장치 |
| US5126231A (en) * | 1990-02-26 | 1992-06-30 | Applied Materials, Inc. | Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch |
| JPH0414212A (ja) * | 1990-05-02 | 1992-01-20 | Dainippon Printing Co Ltd | レジストパターン形成方法 |
| US5066566A (en) * | 1990-07-31 | 1991-11-19 | At&T Bell Laboratories | Resist materials |
| JP3041972B2 (ja) * | 1991-01-10 | 2000-05-15 | 富士通株式会社 | 半導体装置の製造方法 |
| DE69226920T2 (de) * | 1991-10-07 | 1999-01-28 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Lichtempfindliche Zusammensetzung |
| JP3014065B2 (ja) * | 1991-10-29 | 2000-02-28 | 日本ビクター株式会社 | 光ディスク,ガラスマスタ,ガラススタンパ,ガラス基板,それらの製造方法 |
| EP0718696B1 (en) | 1992-07-22 | 2002-01-16 | Asahi Kasei Kabushiki Kaisha | Photosensitive polyimide precursor composition |
| US5370969A (en) | 1992-07-28 | 1994-12-06 | Sharp Kabushiki Kaisha | Trilayer lithographic process |
| US5362608A (en) | 1992-08-24 | 1994-11-08 | Brewer Science, Inc. | Microlithographic substrate cleaning and compositions therefor |
| JPH06230574A (ja) * | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| US5443941A (en) * | 1993-03-01 | 1995-08-22 | National Semiconductor Corporation | Plasma polymer antireflective coating |
| JPH06295064A (ja) * | 1993-04-09 | 1994-10-21 | Kansai Paint Co Ltd | 感光性組成物及びパターンの製造方法 |
| US5397684A (en) * | 1993-04-27 | 1995-03-14 | International Business Machines Corporation | Antireflective polyimide dielectric for photolithography |
| JPH07183194A (ja) * | 1993-12-24 | 1995-07-21 | Sony Corp | 多層レジストパターン形成方法 |
| US5691101A (en) | 1994-03-15 | 1997-11-25 | Kabushiki Kaisha Toshiba | Photosensitive composition |
| GB2288184A (en) | 1994-03-31 | 1995-10-11 | Catalysts & Chem Ind Co | Coating composition |
| JP3033443B2 (ja) * | 1994-06-29 | 2000-04-17 | 信越化学工業株式会社 | 反射防止膜材料 |
| US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
| JP3325715B2 (ja) | 1994-08-24 | 2002-09-17 | ホーヤ株式会社 | 反射防止性を有する光学部材の製造方法 |
| JPH08110638A (ja) | 1994-10-13 | 1996-04-30 | Hitachi Chem Co Ltd | 感光性樹脂組成物およびレジスト像の製造法 |
| US5688987A (en) * | 1994-11-09 | 1997-11-18 | Brewer Science, Inc. | Non-subliming Mid-UV dyes and ultra-thin organic arcs having differential solubility |
| US5554473A (en) * | 1994-11-23 | 1996-09-10 | Mitsubishi Chemical America, Inc. | Photoreceptor having charge transport layers containing a copolycarbonate and layer containing same |
| US5542971A (en) * | 1994-12-01 | 1996-08-06 | Pitney Bowes | Bar codes using luminescent invisible inks |
| US5545588A (en) * | 1995-05-05 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of using disposable hard mask for gate critical dimension control |
| KR100441551B1 (ko) * | 1995-07-12 | 2004-11-03 | 미쓰비시 엔지니어링-플라스틱스 코포레이션 | 폴리카르보네이트수지조성물 |
| US5968324A (en) | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
| KR100223329B1 (ko) * | 1995-12-29 | 1999-10-15 | 김영환 | 반도체 소자의 미세 패턴 제조방법 |
| KR100206597B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 장치의 미세패턴 제조방법 |
| DE69708787T2 (de) * | 1996-03-06 | 2002-06-20 | Clariant Finance (Bvi) Ltd., Road Town | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
| US5633210A (en) * | 1996-04-29 | 1997-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming damage free patterned layers adjoining the edges of high step height apertures |
| US5807790A (en) * | 1996-05-07 | 1998-09-15 | Advanced Micro Devices, Inc. | Selective i-line BARL etch process |
| US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
| US5739254A (en) * | 1996-08-29 | 1998-04-14 | Xerox Corporation | Process for haloalkylation of high performance polymers |
| JP3135508B2 (ja) * | 1996-10-22 | 2001-02-19 | キヤノン株式会社 | パターン形成方法およびデバイス生産方法 |
| JPH10149531A (ja) | 1996-11-15 | 1998-06-02 | Sony Corp | 磁気記録媒体及びその製造方法 |
| US5952448A (en) * | 1996-12-31 | 1999-09-14 | Korea Research Institute Of Chemical Technology | Stable precursor of polyimide and a process for preparing the same |
| TW432257B (en) * | 1997-01-31 | 2001-05-01 | Shinetsu Chemical Co | High molecular weight silicone compound, chemically amplified positive resist composition and patterning method |
| US6232386B1 (en) * | 1997-02-26 | 2001-05-15 | Integument Technologies, Inc. | Polymer composites having an oxyhalo surface and methods for making same |
| KR20000076000A (ko) | 1997-03-07 | 2000-12-26 | 알프레드 엘. 미첼슨 | 티타니아-도핑 용융 실리카의 제조 방법 |
| JPH10307394A (ja) | 1997-05-09 | 1998-11-17 | Hitachi Ltd | ポジ型感光性樹脂組成物とそれを用いたパターン形成方法並びに電子装置の製法 |
| TW473653B (en) | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
| US6428894B1 (en) * | 1997-06-04 | 2002-08-06 | International Business Machines Corporation | Tunable and removable plasma deposited antireflective coatings |
| US6054254A (en) * | 1997-07-03 | 2000-04-25 | Kabushiki Kaisha Toshiba | Composition for underlying film and method of forming a pattern using the film |
| JP3473887B2 (ja) * | 1997-07-16 | 2003-12-08 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法 |
| US6124077A (en) * | 1997-09-05 | 2000-09-26 | Kansai Paint Co., Ltd. | Visible light-sensitive compositions and pattern formation process |
| KR100566042B1 (ko) * | 1997-10-07 | 2006-05-25 | 간사이 페인트 가부시키가이샤 | 포지티브형전착포토레지스트조성물및패턴의제조방법 |
| US6218292B1 (en) * | 1997-12-18 | 2001-04-17 | Advanced Micro Devices, Inc. | Dual layer bottom anti-reflective coating |
| US6338936B1 (en) * | 1998-02-02 | 2002-01-15 | Taiyo Ink Manufacturing Co., Ltd. | Photosensitive resin composition and method for formation of resist pattern by use thereof |
| US5998569A (en) | 1998-03-17 | 1999-12-07 | International Business Machines Corporation | Environmentally stable optical filter materials |
| US6156665A (en) | 1998-04-13 | 2000-12-05 | Lucent Technologies Inc. | Trilayer lift-off process for semiconductor device metallization |
| US6451498B1 (en) * | 1998-05-28 | 2002-09-17 | Atotech Deutschland Gmbh | Photosensitive composition |
| JP3673399B2 (ja) | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
| US6063547A (en) * | 1998-06-11 | 2000-05-16 | Chartered Semiconductor Manufacturing, Ltd. | Physical vapor deposition poly-p-phenylene sulfide film as a bottom anti-reflective coating on polysilicon |
| US6121098A (en) * | 1998-06-30 | 2000-09-19 | Infineon Technologies North America Corporation | Semiconductor manufacturing method |
| US6976904B2 (en) | 1998-07-09 | 2005-12-20 | Li Family Holdings, Ltd. | Chemical mechanical polishing slurry |
| US6103456A (en) * | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
| US6071662A (en) * | 1998-07-23 | 2000-06-06 | Xerox Corporation | Imaging member with improved anti-curl backing layer |
| TWI250379B (en) | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| US6380611B1 (en) * | 1998-09-03 | 2002-04-30 | Micron Technology, Inc. | Treatment for film surface to reduce photo footing |
| US6268282B1 (en) * | 1998-09-03 | 2001-07-31 | Micron Technology, Inc. | Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
| US6410209B1 (en) * | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
| JP3852889B2 (ja) * | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
| US6361833B1 (en) * | 1998-10-28 | 2002-03-26 | Henkel Corporation | Composition and process for treating metal surfaces |
| US6114085A (en) | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
| US6127070A (en) | 1998-12-01 | 2000-10-03 | Advanced Micro Devices, Inc. | Thin resist with nitride hard mask for via etch application |
| US6165695A (en) | 1998-12-01 | 2000-12-26 | Advanced Micro Devices, Inc. | Thin resist with amorphous silicon hard mask for via etch application |
| US6162587A (en) * | 1998-12-01 | 2000-12-19 | Advanced Micro Devices | Thin resist with transition metal hard mask for via etch application |
| US6156658A (en) | 1998-12-02 | 2000-12-05 | Advanced Micro Devices, Inc. | Ultra-thin resist and silicon/oxide hard mask for metal etch |
| US6020269A (en) * | 1998-12-02 | 2000-02-01 | Advanced Micro Devices, Inc. | Ultra-thin resist and nitride/oxide hard mask for metal etch |
| US6171763B1 (en) * | 1998-12-02 | 2001-01-09 | Advanced Micro Devices, Inc. | Ultra-thin resist and oxide/nitride hard mask for metal etch |
| US6306560B1 (en) | 1998-12-02 | 2001-10-23 | Advanced Micro Devices, Inc. | Ultra-thin resist and SiON/oxide hard mask for metal etch |
| US6200907B1 (en) * | 1998-12-02 | 2001-03-13 | Advanced Micro Devices, Inc. | Ultra-thin resist and barrier metal/oxide hard mask for metal etch |
| US6309926B1 (en) | 1998-12-04 | 2001-10-30 | Advanced Micro Devices | Thin resist with nitride hard mask for gate etch application |
| US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
| US6207238B1 (en) * | 1998-12-16 | 2001-03-27 | Battelle Memorial Institute | Plasma enhanced chemical deposition for high and/or low index of refraction polymers |
| US6251562B1 (en) * | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
| KR100363695B1 (ko) * | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
| US6136511A (en) | 1999-01-20 | 2000-10-24 | Micron Technology, Inc. | Method of patterning substrates using multilayer resist processing |
| US6136679A (en) | 1999-03-05 | 2000-10-24 | Taiwan Semiconductor Manufacturing Company | Gate micro-patterning process |
| US6316165B1 (en) | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
| US6426125B1 (en) * | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
| US6616692B1 (en) * | 1999-04-30 | 2003-09-09 | Advanced Medical Optics, Inc. | Intraocular lens combinations |
| US6458509B1 (en) | 1999-04-30 | 2002-10-01 | Toagosei Co., Ltd. | Resist compositions |
| JP4512217B2 (ja) * | 1999-08-20 | 2010-07-28 | 富士フイルム株式会社 | アリールシラン化合物、発光素子材料およびそれを使用した発光素子 |
| WO2001015211A1 (en) | 1999-08-26 | 2001-03-01 | Brewer Science | Improved fill material for dual damascene processes |
| CN1402840A (zh) * | 1999-11-30 | 2003-03-12 | 部鲁尔科学公司 | 用于聚合物防反射涂料的非芳族发色团 |
| US20020009599A1 (en) * | 2000-01-26 | 2002-01-24 | Welch Cletus N. | Photochromic polyurethane coating and articles having such a coating |
| TW439118B (en) * | 2000-02-10 | 2001-06-07 | Winbond Electronics Corp | Multilayer thin photoresist process |
| JP3759456B2 (ja) * | 2000-02-22 | 2006-03-22 | ブルーワー サイエンス アイ エヌ シー. | 化学蒸着により蒸着される反射防止有機ポリマーコーティング |
| US6461717B1 (en) * | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
| JP2001338926A (ja) | 2000-05-29 | 2001-12-07 | Sony Corp | 半導体装置の製造方法 |
| JP2001344732A (ja) | 2000-05-29 | 2001-12-14 | Fujitsu Ltd | 磁気記録媒体用基板及びその製造方法、並びに磁気記録媒体の評価方法 |
| TW556047B (en) * | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
| KR100917101B1 (ko) | 2000-08-04 | 2009-09-15 | 도요 보세키 가부시키가이샤 | 플렉시블 금속적층체 및 그 제조방법 |
| JP3948646B2 (ja) * | 2000-08-31 | 2007-07-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
| WO2002025374A2 (en) * | 2000-09-19 | 2002-03-28 | Shipley Company, L.L.C. | Antireflective composition |
| US6455416B1 (en) * | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
| JP3787271B2 (ja) | 2000-11-20 | 2006-06-21 | 東京応化工業株式会社 | 微細レジストホールパターン形成方法 |
| US20030054117A1 (en) * | 2001-02-02 | 2003-03-20 | Brewer Science, Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
| US6444582B1 (en) * | 2001-02-05 | 2002-09-03 | United Microelectronics Corp. | Methods for removing silicon-oxy-nitride layer and wafer surface cleaning |
| US6309955B1 (en) | 2001-02-16 | 2001-10-30 | Advanced Micro Devices, Inc. | Method for using a CVD organic barc as a hard mask during via etch |
| WO2002066539A1 (en) | 2001-02-16 | 2002-08-29 | Dominion Energy, Inc. | Poly amic acid system for polyimides |
| TW576859B (en) * | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
| US6680252B2 (en) * | 2001-05-15 | 2004-01-20 | United Microelectronics Corp. | Method for planarizing barc layer in dual damascene process |
| ATE334809T1 (de) * | 2001-05-29 | 2006-08-15 | Essilor Int | Verfahren zur herstellung von einem beschichteten optischen gegenstand |
| US6605545B2 (en) * | 2001-06-01 | 2003-08-12 | United Microelectronics Corp. | Method for forming hybrid low-K film stack to avoid thermal stress effect |
| US6458705B1 (en) | 2001-06-06 | 2002-10-01 | United Microelectronics Corp. | Method for forming via-first dual damascene interconnect structure |
| US6548387B2 (en) * | 2001-07-20 | 2003-04-15 | United Microelectronics Corporation | Method for reducing hole defects in the polysilicon layer |
| US6624068B2 (en) * | 2001-08-24 | 2003-09-23 | Texas Instruments Incorporated | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography |
| US6586560B1 (en) * | 2001-09-18 | 2003-07-01 | Microchem Corp. | Alkaline soluble maleimide-containing polymers |
| WO2003027178A2 (en) * | 2001-09-27 | 2003-04-03 | Lg Chem Ltd. | Polyimide copolymer and methods for preparing the same |
| KR100465866B1 (ko) | 2001-10-26 | 2005-01-13 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
| US6916537B2 (en) * | 2001-11-01 | 2005-07-12 | Transitions Optical Inc. | Articles having a photochromic polymeric coating |
| JP2003162065A (ja) | 2001-11-26 | 2003-06-06 | Mitsubishi Electric Corp | 露光装置、露光マスク、露光方法、表示装置及び電子部品 |
| JP3773445B2 (ja) | 2001-12-19 | 2006-05-10 | セントラル硝子株式会社 | 含フッ素脂環族ジアミンおよびこれを用いた重合体 |
| US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| US20030215736A1 (en) | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
| US7261997B2 (en) * | 2002-01-17 | 2007-08-28 | Brewer Science Inc. | Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings |
| US6488509B1 (en) | 2002-01-23 | 2002-12-03 | Taiwan Semiconductor Manufacturing Company | Plug filling for dual-damascene process |
| US6846612B2 (en) * | 2002-02-01 | 2005-01-25 | Brewer Science Inc. | Organic anti-reflective coating compositions for advanced microlithography |
| KR20030068729A (ko) * | 2002-02-16 | 2003-08-25 | 삼성전자주식회사 | 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법 |
| US6911293B2 (en) | 2002-04-11 | 2005-06-28 | Clariant Finance (Bvi) Limited | Photoresist compositions comprising acetals and ketals as solvents |
| US6852474B2 (en) * | 2002-04-30 | 2005-02-08 | Brewer Science Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
| US6849293B2 (en) * | 2002-05-02 | 2005-02-01 | Institute Of Microelectronics | Method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process |
| US7265431B2 (en) | 2002-05-17 | 2007-09-04 | Intel Corporation | Imageable bottom anti-reflective coating for high resolution lithography |
| US6740469B2 (en) * | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
| US6872506B2 (en) | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
| US6638853B1 (en) | 2002-07-03 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for avoiding photoresist resist residue on semioconductor feature sidewalls |
| US7108958B2 (en) | 2002-07-31 | 2006-09-19 | Brewer Science Inc. | Photosensitive bottom anti-reflective coatings |
| US20040077173A1 (en) * | 2002-10-17 | 2004-04-22 | Swaminathan Sivakumar | Using water soluble bottom anti-reflective coating |
| KR100487948B1 (ko) | 2003-03-06 | 2005-05-06 | 삼성전자주식회사 | 이중 다마신 기술을 사용하여 비아콘택 구조체를 형성하는방법 |
| KR100539494B1 (ko) | 2003-05-02 | 2005-12-29 | 한국전자통신연구원 | 전기광학 및 비선형 광학 고분자로서의 곁사슬형폴리아미드 에스테르, 그것의 제조 방법 및 그것으로부터제조된 필름 |
| ATE377036T1 (de) | 2003-05-23 | 2007-11-15 | Dow Corning | Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit |
| US7364832B2 (en) * | 2003-06-11 | 2008-04-29 | Brewer Science Inc. | Wet developable hard mask in conjunction with thin photoresist for micro photolithography |
| JP4173414B2 (ja) | 2003-08-28 | 2008-10-29 | 東京応化工業株式会社 | 反射防止膜形成用組成物およびレジストパターンの形成方法 |
| US7074527B2 (en) | 2003-09-23 | 2006-07-11 | Freescale Semiconductor, Inc. | Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same |
| US7364835B2 (en) * | 2003-10-15 | 2008-04-29 | Brewer Science Inc. | Developer-soluble materials and methods of using the same in via-first dual damascene applications |
| KR20050045560A (ko) | 2003-11-12 | 2005-05-17 | 삼성전자주식회사 | 리세스 게이트 트랜지스터의 채널형성용 이온주입 방법 |
| US20050255410A1 (en) | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| US20070207406A1 (en) | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| CN102981368B (zh) | 2004-05-14 | 2015-03-04 | 日产化学工业株式会社 | 含有乙烯基醚化合物的形成防反射膜的组合物 |
| KR20060028220A (ko) | 2004-09-24 | 2006-03-29 | 주식회사 하이닉스반도체 | 반도체장치의 제조 방법 |
| KR20070087356A (ko) | 2006-02-23 | 2007-08-28 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| US7914974B2 (en) * | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
-
2005
- 2005-04-14 US US11/105,862 patent/US20050255410A1/en not_active Abandoned
- 2005-04-15 EP EP05771626.8A patent/EP1743219B1/en not_active Expired - Lifetime
- 2005-04-15 KR KR1020117031664A patent/KR101308191B1/ko not_active Expired - Fee Related
- 2005-04-15 JP JP2007510782A patent/JP5972510B2/ja not_active Expired - Lifetime
- 2005-04-15 WO PCT/US2005/012851 patent/WO2005111719A2/en not_active Ceased
- 2005-04-15 CN CN201010110135.5A patent/CN101916051B/zh not_active Expired - Lifetime
- 2005-04-15 CN CN2005800132461A patent/CN1981240B/zh not_active Expired - Lifetime
- 2005-04-15 KR KR1020067022125A patent/KR101308281B1/ko not_active Expired - Lifetime
- 2005-04-29 TW TW94113835A patent/TWI387612B/zh not_active IP Right Cessation
-
2006
- 2006-12-20 US US11/613,704 patent/US7601483B2/en not_active Expired - Lifetime
-
2009
- 2009-08-31 US US12/551,176 patent/US20090317747A1/en not_active Abandoned
-
2010
- 2010-12-20 US US12/973,552 patent/US9110372B2/en not_active Expired - Lifetime
-
2012
- 2012-05-08 JP JP2012106641A patent/JP5511887B2/ja not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110653A (en) * | 1999-07-26 | 2000-08-29 | International Business Machines Corporation | Acid sensitive ARC and method of use |
| CN1288902A (zh) * | 1999-09-07 | 2001-03-28 | 现代电子产业株式会社 | 用于抗反射涂层的有机聚合物和其制备方法 |
| CN1463390A (zh) * | 2001-05-08 | 2003-12-24 | 希普利公司 | 光可成像组合物 |
| CN1484094A (zh) * | 2002-07-23 | 2004-03-24 | ���ǵ�����ʽ���� | 可溶于光致抗蚀剂显影液的有机底部抗反射组合物及使用该组合物的光刻和蚀刻方法 |
| CN1942826A (zh) * | 2004-03-25 | 2007-04-04 | Az电子材料美国公司 | 正性操作的可光成像的底部抗反射涂层 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005111719A2 (en) | 2005-11-24 |
| JP5972510B2 (ja) | 2016-08-17 |
| US20050255410A1 (en) | 2005-11-17 |
| US20070117049A1 (en) | 2007-05-24 |
| KR101308191B1 (ko) | 2013-09-13 |
| KR20070012812A (ko) | 2007-01-29 |
| WO2005111719A3 (en) | 2006-11-09 |
| CN1981240A (zh) | 2007-06-13 |
| CN101916051A (zh) | 2010-12-15 |
| EP1743219A4 (en) | 2010-04-28 |
| US20120156613A1 (en) | 2012-06-21 |
| EP1743219B1 (en) | 2015-12-09 |
| EP1743219A2 (en) | 2007-01-17 |
| JP2007536389A (ja) | 2007-12-13 |
| KR101308281B1 (ko) | 2013-09-13 |
| TW200615312A (en) | 2006-05-16 |
| KR20120015360A (ko) | 2012-02-21 |
| TWI387612B (zh) | 2013-03-01 |
| CN1981240B (zh) | 2012-09-26 |
| US9110372B2 (en) | 2015-08-18 |
| JP5511887B2 (ja) | 2014-06-04 |
| US20090317747A1 (en) | 2009-12-24 |
| US7601483B2 (en) | 2009-10-13 |
| JP2012188671A (ja) | 2012-10-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101916051B (zh) | 形成微电子结构的方法 | |
| JP3835823B2 (ja) | フォトレジスト組成物のための反射防止膜 | |
| EP2070107B1 (en) | Anti-reflective imaging layer for multiple patterning process | |
| TWI438575B (zh) | 以可交聯聚合物為主之底層塗覆組合物 | |
| JP3231794B2 (ja) | フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法 | |
| JP4881640B2 (ja) | オーバーコートされるフォトレジストと共に使用するためのコーティング組成物 | |
| KR101017339B1 (ko) | 포토레지스트용 반사방지성 조성물 | |
| JP2002502982A (ja) | deepUVでの改良された熱硬化性抗反射コーティング | |
| TWI491995B (zh) | 用於光阻之抗反射組合物 | |
| CN101659615A (zh) | 含有开环邻苯二甲酸酐的有机防反射层组合物及其制备方法 | |
| JPH11511194A (ja) | 熱硬化性反射防止性コーティングおよびその製造方法 | |
| JP2001505234A (ja) | フォトレジスト組成物のための反射防止膜 | |
| TW201002793A (en) | Antireflective coating compositions | |
| JP2000204115A (ja) | 有機反射防止膜塗布重合体およびその準備方法 | |
| JP2007113014A (ja) | 有機反射防止重合体およびその製造方法 | |
| JP4955210B2 (ja) | 感光性反射防止膜 | |
| EP2000852B1 (en) | Halogenated anti-reflective coatings | |
| KR100891046B1 (ko) | 하이드록시프로필 셀룰로즈의 아릴 우레탄을 함유하는열경화성 반사방지 코팅 | |
| KR101211325B1 (ko) | 광화상형성가능한 측쇄 폴리머 | |
| CN109791362A (zh) | 与外涂布光致抗蚀剂一起使用的涂料组合物 | |
| KR100721181B1 (ko) | 유기반사방지막 조성물 및 그의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |
|
| CX01 | Expiry of patent term |