DE69708787T2 - Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie - Google Patents
Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologieInfo
- Publication number
- DE69708787T2 DE69708787T2 DE69708787T DE69708787T DE69708787T2 DE 69708787 T2 DE69708787 T2 DE 69708787T2 DE 69708787 T DE69708787 T DE 69708787T DE 69708787 T DE69708787 T DE 69708787T DE 69708787 T2 DE69708787 T2 DE 69708787T2
- Authority
- DE
- Germany
- Prior art keywords
- film patterns
- producing film
- lifting technology
- lifting
- technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1293496P | 1996-03-06 | 1996-03-06 | |
PCT/US1997/002427 WO1997033199A1 (en) | 1996-03-06 | 1997-02-18 | A process for obtaining a lift-off imaging profile |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69708787D1 DE69708787D1 (de) | 2002-01-17 |
DE69708787T2 true DE69708787T2 (de) | 2002-06-20 |
Family
ID=21757445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69708787T Expired - Fee Related DE69708787T2 (de) | 1996-03-06 | 1997-02-18 | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
Country Status (8)
Country | Link |
---|---|
US (1) | US5922503A (de) |
EP (1) | EP0824719B1 (de) |
JP (1) | JPH11504446A (de) |
KR (1) | KR19990008362A (de) |
CN (1) | CN1105944C (de) |
DE (1) | DE69708787T2 (de) |
TW (1) | TW477914B (de) |
WO (1) | WO1997033199A1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0824719B1 (de) * | 1996-03-06 | 2001-12-05 | Clariant Finance (BVI) Limited | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
US6316168B1 (en) * | 1999-04-12 | 2001-11-13 | Siemens Aktiengesellschaft | Top layer imaging lithography for semiconductor processing |
US6852636B1 (en) | 1999-12-27 | 2005-02-08 | Lam Research Corporation | Insitu post etch process to remove remaining photoresist and residual sidewall passivation |
US6495311B1 (en) * | 2000-03-17 | 2002-12-17 | International Business Machines Corporation | Bilayer liftoff process for high moment laminate |
US6451512B1 (en) | 2000-05-01 | 2002-09-17 | Advanced Micro Devices, Inc. | UV-enhanced silylation process to increase etch resistance of ultra thin resists |
US7132219B2 (en) * | 2001-02-02 | 2006-11-07 | Brewer Science Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
US6689541B1 (en) * | 2001-06-19 | 2004-02-10 | Advanced Micro Devices, Inc. | Process for forming a photoresist mask |
US6852474B2 (en) * | 2002-04-30 | 2005-02-08 | Brewer Science Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
US20040229762A1 (en) * | 2003-05-13 | 2004-11-18 | Rohm And Haas Electronic Materials, L.L.C. | Polymer remover |
US6952329B2 (en) * | 2003-08-28 | 2005-10-04 | Hitachi Global Storage Technologies Netherlands B.V. | Disk drive with localized thermal processing of integrated lead suspensions for controlling the pitch static attitude of sliders |
US7152303B2 (en) * | 2003-08-28 | 2006-12-26 | Hitachi Global Storage Technologies Netherlands Bv | Method of localized thermal processing of integrated lead suspensions for controlling the pitch static attitude of sliders |
US6992862B2 (en) * | 2003-08-28 | 2006-01-31 | Hitachi Global Storage Technologies Netherlands B.V. | Disk drive with controlled pitch static attitude of sliders on integrated lead suspensions by improved plastic deformation processing |
US6993824B2 (en) * | 2003-08-28 | 2006-02-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method of controlling pitch static attitude of sliders on integrated lead suspensions by improved plastic deformation processing |
KR100600639B1 (ko) * | 2004-02-23 | 2006-07-14 | 동우 화인켐 주식회사 | 포지티브 타입 포토레지스트 조성물 |
US20070207406A1 (en) * | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US20050255410A1 (en) | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US7309659B1 (en) | 2005-04-01 | 2007-12-18 | Advanced Micro Devices, Inc. | Silicon-containing resist to pattern organic low k-dielectrics |
US20070134943A2 (en) * | 2006-04-02 | 2007-06-14 | Dunnrowicz Clarence J | Subtractive - Additive Edge Defined Lithography |
US7914974B2 (en) | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
KR101647158B1 (ko) * | 2008-01-29 | 2016-08-09 | 브레우어 사이언스 인코포레이션 | 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정 |
US9640396B2 (en) * | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
CN112723305B (zh) * | 2020-12-25 | 2024-05-03 | 杭州欧光芯科技有限公司 | 一种超表面的制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782008A (en) * | 1985-03-19 | 1988-11-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
GB2221767A (en) * | 1988-08-09 | 1990-02-14 | Plessey Co Plc | Bi-level resist etch process |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
US5705432A (en) * | 1995-12-01 | 1998-01-06 | Hughes Aircraft Company | Process for providing clean lift-off of sputtered thin film layers |
EP0824719B1 (de) * | 1996-03-06 | 2001-12-05 | Clariant Finance (BVI) Limited | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
-
1997
- 1997-02-18 EP EP97905982A patent/EP0824719B1/de not_active Expired - Lifetime
- 1997-02-18 US US08/802,807 patent/US5922503A/en not_active Expired - Fee Related
- 1997-02-18 WO PCT/US1997/002427 patent/WO1997033199A1/en active IP Right Grant
- 1997-02-18 KR KR1019970707888A patent/KR19990008362A/ko active IP Right Grant
- 1997-02-18 DE DE69708787T patent/DE69708787T2/de not_active Expired - Fee Related
- 1997-02-18 CN CN97190154A patent/CN1105944C/zh not_active Expired - Fee Related
- 1997-02-18 JP JP9531775A patent/JPH11504446A/ja not_active Withdrawn
- 1997-02-22 TW TW086102171A patent/TW477914B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0824719B1 (de) | 2001-12-05 |
EP0824719A1 (de) | 1998-02-25 |
DE69708787D1 (de) | 2002-01-17 |
CN1181820A (zh) | 1998-05-13 |
JPH11504446A (ja) | 1999-04-20 |
CN1105944C (zh) | 2003-04-16 |
US5922503A (en) | 1999-07-13 |
KR19990008362A (ko) | 1999-01-25 |
WO1997033199A1 (en) | 1997-09-12 |
TW477914B (en) | 2002-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |