CN101454886B - 用于沉积与硬化低k膜层用于充填间隙与同形膜层应用的方法 - Google Patents

用于沉积与硬化低k膜层用于充填间隙与同形膜层应用的方法 Download PDF

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CN101454886B
CN101454886B CN2007800200538A CN200780020053A CN101454886B CN 101454886 B CN101454886 B CN 101454886B CN 2007800200538 A CN2007800200538 A CN 2007800200538A CN 200780020053 A CN200780020053 A CN 200780020053A CN 101454886 B CN101454886 B CN 101454886B
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J·C·芒罗
S·D·耐马尼
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Abstract

描述制造一个氧化硅层于一基板上的方法。该些方法包括在一反应腔内形成该氧化硅层于该基板上，而此过程藉由使一氧原子前体与一硅前体进行反应，并沉积反应产物于该基板上。该氧原子前体产生于该反应腔外。该些方法亦包括在约600℃或更低的温度下加热该氧化硅层，然后将该氧化硅暴露在一感应耦合等离子体下。额外的方法描述如下，该沉积的氧化硅层藉由将其暴露在紫外光下而硬化，且亦将该层暴露在一感应耦合等离子体下。

Description

用于沉积与硬化低k膜层用于充填间隙与同形膜层应用的方法
交互参照的相关申请
本申请主张享有Munro等人的美国暂时申请第60/803,489号的利益，其于2006年5月30日申请，专利名称为「用于沉积及硬化针对填充间隙及保形薄膜应用的低k薄膜的方法(A METHOD FOR DEPOSITING AND CURING LOW-k FILMS FOR GAPFILL AND CONFORMAL FILM APPLICATIONS)」。本发明亦关于Ingle等人的共同受让的美国暂时申请第60/803,493号，其于2006年5月30日申请，专利名称为「使用含硅前体及原子氧进行高品质类流式氧化硅的化学气相沉积(CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATONIC OXYGEN)」。本发明亦关于Chen等人的美国暂时申请第60/803,481号，其于2006年5月30日申请，专利名称为「用于增进氧化硅薄膜品质的新颖沉积等离子硬化循环工艺(A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE)」。此外，本发明亦关于Lubomirsky的2006年5月30日申请的美国暂时申请第60/803,499号，发明名称为“针对电介质填充间隙的处理室(PROCESS CHAMBER FOR DIELECTRIC GAPFILL)”。上述优先权的美国暂时申请以及相关申请在此皆将其整体并入以做为参考。
技术领域
本发明关于沉积与硬化低k膜层用于充填间隙与同形膜层应用的方法。
背景技术
介电膜沉积中，往往乐见形成一高度同形(conformal)层，其具有充分的绝缘特性(即，低k值)与良好的膜层特性(例如，高膜层密度与低湿式蚀刻速率比值「wet etch rate ratio，WERR」)。不幸地，极少(如果有的话)有初始材质于单次沉积中就兼备所有这些特性。氧化硅介电质沉积中，高度同形层一般具有良好的流动性，这让该膜层移入间隙、空隙与接缝。然而，具有良好流动性的氧化物膜亦倾向具有高浓度的水与硅醇(即，硅醇键结「Si-OH」)，其提高该膜层的k质与湿式蚀刻速率比值。另一方面，低水分氧化物膜的沉积物一般具有较低的k值与湿式蚀刻速率比值，但他们的低流动性亦使他们容易形成间隙与接缝。
一种用来缓和高湿度与低湿度氧化硅膜之间缺点的方式，首先沉积一高湿度同形膜层，接着退火处理以移除至少一部份的水。两种已知的退火处理方法为：(1)高温热能退火处理，以及(2)高密度等离子体退火处理。热能退火处理中，将沉积的氧化物层提高至某一温度，在此温度下该膜层蒸发出明显的水气。硅醇基亦断裂成水与硅氧(Si-O)键结，而至少某部分这样形成的水亦由该氧化物层逸出。而成果为一退火处理过的氧化硅层，其比最初沉积的氧化物膜具有更高的密度与更佳的电绝缘性(即，具有较低的k值)。
已知的热能退火处理在退火温度较高时更有效率。超过1000℃的高温退火处理，以明显高于300℃退火处理的速度断裂硅醇键结与蒸发沉积的氧化物层的水气。较高的移除速率缩短退火处理时间且提高退火处理步骤的效率。然而，较高温度的退火处理需与工艺的热能预算限制达成平衡。例如，假若对沉积在金属管线上的金属间介电层(intermetal dielectric，IMD)执行热能退火处理，退火处理温度的最高限制为400℃或更低。某些实例中，热能预算不足会使得需要长期退火处理的热能退火处理无法实行。
当无法实行高温退火处理时，可应用一包括高密度等离子体的第二种退火处理方法。此种方法中，将最初沉积的氧化硅层暴露在高密度等离子体(一般由诸如氦与氩等惰性气体断裂而形成)下。来自等离子体的带电微粒撞击氧化物膜且造成硅醇键结的断裂与水蒸气的移除，高密度等离子体中的退火温度通常低于热能退火处理的温度，因此可用来以低热能预算限制退火处理氧化物膜。
高能等离子体微粒亦可断裂氧化物膜中的碳-硅与碳-碳键结。当沉积一纯粹的氧化硅层时，等离子体退火处理断裂与移除碳键结为一乐见的结果。然而，对并入碳以降低该材质介电常数的低k值氧化物膜而言，等离子体移除碳会因为提高其k值而损害该膜层。因此，需要一种额外的退火处理方法，其可在低温下有效地硬化介电膜层而不有害地影响低k材质的介电常数。藉由本发明的实施例来解决此问题与其它争议。
发明内容
本发明的实施例包括制造一个氧化硅层于一基板上的方法。该些方法包括在一反应腔中形成该氧化硅层于该基板上，而此过程藉由使一氧原子前体与一硅前体进行反应然后沉积反应产物于该基板上。可于该反应腔外产生该氧原子前体。该些方法亦包括在600℃或更低的一温度下加热该氧化硅层，然后将该氧化硅层暴露在一诱导耦合等离子体(induced coupled plasma)下。
本发明的实施例亦包括形成一个氧化硅层于一基板上的方法。该些方法包括在一反应腔中形成该氧化硅层于该基板上，而此过程藉由使一氧原子前体与一硅前体进行反应然后沉积反应产物于该基板上。可于该反应腔外产生该氧原子前体。该些方法亦包括将该氧化硅层暴露在紫外光下，然后将该氧化硅层暴露在一诱导耦合等离子体下。
本发明的实施例又进一步包括沉积与退火处理一晶片基板上的一个氧化硅层的方法。该些方法包括提供该晶片基板给一高密度等离子体化学气相沉积(HDP-CVD)处理腔，氧化硅层的沉积即于该HDP-CVD处理腔中进行；以及提供一远程等离子体产生装置，其位于该高密度等离子体化学气相沉积处理腔外。该远程等离子体产生装置可用来产生一氧原子前体，其被供应给该高密度等离子体化学气相沉积处理腔。该些方法亦包括供应一硅前体给该高密度等离子体化学气相沉积处理腔，该硅前体与该氧原子前体于该HDP-CVD处理腔中进行反应以形成该氧化硅层于该晶片上。该氧化硅层形成后，执行一第一次退火处理于该沉积的氧化硅层上，而该第一次退火处理包括将该层加热至一约300℃至约600℃之间的温度约1分钟至约30分钟。然后，执行一第二次退火处理于该沉积的氧化物层上，而该第二退火处理包括将该层暴露在一高密度氩等离子体下约1分钟至约10分钟。
额外的实施例与特征一部分在接下来的描述中提出，而一部分那些熟悉技术人士依靠说明书的检验可显而易见，或可藉由本发明的实施得知。藉由描述于说明书的构造、组合与方法可理解与获得本发明的特征与优点。
附图说明
可藉由参照说明书剩余部分与图式来实现对本发明性质与优点的进一步了解，在图式内不同图中相同的组件符号代表相同的部件。某些实例中，次要符号连结于组件符号且跟在连字号后以代表许多相同部件的其中之一。当没有详述现行的次要符号的组件编号当作参考时，意指代表所有这类的多个相同组件。
图1显示根据本发明实施例的介电质沉积与退火处理中挑出的步骤的流程图；
图2显示根据本发明实施例的介电质沉积与热/等离子体退火处理中挑出的步骤的流程图；
图3显示根据本发明实施例的介电质沉积与紫外光/等离子体退火处理中挑出的步骤的流程图；
图4显示根据本发明实施例的多层式介电质沉积与热/等离子体退火处理中挑出的步骤的流程图；
图5A根据本发明实施例的高密度等离子体化学气相沉积系统的简易图标；
图5B用于连结根据本发明实施例的高密度等离子体化学气相沉积系统的气体环实例的简易剖面图；
图5C用于连结根据本发明实施例的高密度等离子体化学气相沉积系统的显示器与光笔系统实例的简易图标；以及
图5D用于调控根据本发明实施例的高密度等离子体化学气相沉积系统的处理调控器实例的简易图标；
主要组件符号说明：
100、200、300、400 方法
102、104、106、108、110、112、202、204、206、208、210、212、214、302、304、306、308、310、312、314、402、404、406、408、410、412、414步骤
510 系统                 513 腔室
514 圆盖                 516 等离子体处理区
517 基板                 518 基板支撑构件
519 基板接收部分         520 静电块
521 底座部分             522 腔体构件
523 加热板               524 冷却板
525 节流阀体             526 节流阀
527 闸阀                 528 涡轮分子泵浦
529、530 线圈            531、560 系统调控器
531A、531B 射频源产生器
531C 射频偏压产生器      532A、532B 匹配网络
532C 偏压匹配网络        533 气体输送系统
534A-E 气体源            535A、535A’、535B、535B’、535C、535D、535D’、535E 流量控制器
536 环状空间             537 气体环
538、538A 气体输送管线   539、540 气体喷嘴
541 主体空间             543A、543B、543C 三通阀
544 真空前置管线         545 顶喷嘴
546 顶气口               548 顶空间
550 远程等离子体清洁系统     551 远程微波产生器
553 反应腔               554 进给端口
555 涂抹管               556 处理位置
557 负载位置             561 处理器
562 内存                 563、580 计算机程序
565、565A 阴极射线管显示器
566、566A 光笔           570 真空系统
580A 等离子体源系统      580B 偏压等离子体系统
582 处理选择子程序       584 处理排序子程序
586A、586B、586C 腔室管理子程序
588 基板定位子程序       590 处理气体调控子程序
592 压力调控子程序       594 等离子体调控子程序
具体实施方式
描述多阶段式退火处理氧化硅层的系统与方法。多阶段式退火处理不需高温(例如，超过600℃的温度)即有效地由氧化层中移除水分与硅醇基。多阶段式退火处理包括第一阶段退火处理，其提高该层的硬度且移除一部分的湿气与/或氢氧基(hydroxyl group)；与第二阶段退火处理，其移除大部分(假若不是全部)残留的水分与氢氧基以产生具有良好介电特性(例如，低于3的k值)的硬氧化物层(例如，高于1GPa)。
多阶段式退火处理不需高温或冗长的退火时间(例如，超过60分钟)即可将最初沉积的软氧化物膜层转变为一高品质、低k值的介电层。对含碳的低k氧化物层来说，退火处理的第一阶段硬化该软膜层至接下来退火阶段(们)无法断裂与移除足够的碳而明显提高该层k值的程度。因此，低温且高效率移除水分的退火处理方法(例如，高密度等离子体退火处理)，可用于退火处理中而不危及含碳氧化硅介电层的低k值特性。
示范性氧化物层沉积与退火处理
图1显示根据本发明实施例的介电质沉积与退火处理方法100中所选步骤的流程图。方法100包括提供晶片基板给沉积腔(步骤102)。晶片基板可包括200毫米、300毫米等硅晶片基板。基板具有形成于其上的构造(其包括间隙、沟槽与间距「steps」等)，这些构造具有2∶1或更高、5∶1或更高、7∶1或更高、10∶1或更高、13∶1或更高、15∶1或更高等等的深宽比(aspect ratio)。
将硅前体导入包含基板的反应腔内(步骤104)。硅前体包括一或多种含碳有机硅化合物，与/或例如硅烷(SiH4)的非含碳硅化合物。包含有机硅的化合物包括那些具有直接硅-碳键结与/或那些具有硅-氧-碳键结的化合物。有机硅烷类的硅前体的实例包括二甲基硅烷(dimethylsilane)、三甲基硅烷(trimethylsilane)、四甲基硅烷(tetramethylsilane)、二乙基硅烷(diethylsilane)、四甲基硅酸盐(tetramethylorthosilicate，TMOS)、四乙基硅酸盐(tetraethylorthosilicate，TEOS)、八甲基三硅氧(octamethyltrisiloxane，OMTS)、八甲基环四硅氧(octamethylcyclotetrasiloxane，OMCTS)、四甲基环四硅氧(tetramethylcyclotetrasiloxane，TOMCATS)、二甲基二甲氧基硅烷(dimethyldimethoxysilane，DMDMOS)、二乙氧基甲基硅烷(diethoxymethylsilane，DEMS)、甲基三乙氧基硅烷(methyl triethoysilane，MTES)、苯基二甲基硅烷(phenyldimethylsilane)、苯基硅烷(phenylsilane)以及上述的混合物等。
将有机硅前体导入沉积腔前或过程中，可将其与一载气混合。载气为一非活性气体，其不过度干扰氧化膜形成于基板上。载气的实例包括氦、氖、氩与氢气(H2)等气体。
亦将含氧前体导入包含基板的反应腔(步骤106)。含氧前体可包括沉积腔外远程产生的氧原子。可藉由解离下列前体产生氧原子：氧气(O2)、臭氧(O3)、氮-氧化合物(例如，一氧化氮「NO」、二氧化氮「NO2」、氧化亚氮「N2O」等等)、氢氧化合物(例如，水「H2O」、过氧化氢「H2O2」等等)、碳氧化合物(例如，一氧化碳「CO」、二氧化碳「CO2」等等)以及其它含氧前体与该些前体的组合物。
亦可由下列方式解离前体以产生氧原子：热能解离、紫外光解离与/或等离子体解离等方法。等离子体解离包括在远程等离子体产生腔内由氦、氩等击出等离子体，且将该氧前体引导给等离子体好产生氧原子前体。
方法100的实施例中，氧原子与有机硅前体彼此不混合直到被导入沉积腔。前体经由空间上分散的独立前体进入口(分散在反应腔周围)进入腔室。例如，氧原子前体由位在腔室顶部且位于基板正上方的一进入口(或进入口群)进入腔室。进入口将氧前体流指向垂直于基板沉积表面的方向。同时，硅前体由一或多个环绕在沉积腔侧壁的进入口进入腔室。此类进入口将硅前体流指向大约平行于沉积表面的方向。
额外的实施例包括经由多端口式喷头的独立端口传递氧原子与硅前体。例如，位在基板上方的喷头，其包括让前体进入沉积腔的开口的一种样式。以氧原子前体供应一部分开口，而以硅前体供应第二部分开口。经由不同部分开口传递的前体，其彼此之间流动分离直到离开进入沉积腔。关于前体处理设备的形式与设计的额外详细内容描述于共同让渡的美国暂时性专利申请案(案号为A011162/T72700)，由Lubomirsky在与本说明书相同日期提申且命名为「介电质间隙充填所用的处理腔」，其全文在此以参考资料的方式并入本文中。
当氧原子与硅前体在沉积腔内反应时，他们形成氧化硅于基板沉积表面上(步骤108)。初步沉积过程中，将基板维持在一稳定且相对低温下(例如，约30℃至约70℃)。最初的氧化物层具有出色的流动性，且可快速地移动至基板表面上构造内的间隙底部。
氧化硅层沉积后，接着执行第一次退火处理(步骤110)，以移除一部分的水分且提高该层的硬度。此初步退火步骤包括在惰性环境(例如，干燥氮气环境)中加热该氧化物层约1分钟至约10分钟。以不伤害形成于基板构造内的金属管线(例如，当氧化物层为沉积于铝金属管线上的金属间介电层)来选择热能退火处理的温度。
或者(或另外)，该第一次退火步骤包括将该氧化硅层暴露在紫外光下约1分钟至约30分钟。如同热能退火处理，紫外光退火处理可移除最初沉积的氧化物膜中存在的一部分水分，且亦增加该膜层的硬度。
第一次退火处理结束后，执行一第二次退火处理(步骤112)以进一步由该氧化物层中移除水分与硅醇键结。退火处理步骤112中，移除实质上所有的水分与硅醇，好给该层一较低的k值与较低的湿式蚀刻速率比值(不论相对于最初沉积的氧化物层或第一次退火步骤处理后的该层)。这第二次退火处理包括将该氧化物层暴露在一等离子体下，此等离子体有效地从该氧化物中移除水与硅醇基。然而第一退火处理后，氧化物层具有足够的硬度能减少(或避免)等离子体断裂存在于氧化物中的碳基团。因此，对低k值含碳氧化物层而言，等离子体退火处理不会移除足以明显提高该层k值的碳含量。
现在参照图2，显示一描述根据本发明实施例的介电质沉积与热能/等离子体退火处理方法200中所选步骤的流程图。方法200包括提供基板给沉积腔(步骤202)。接着，最初氧化物层的沉积包括在反应腔外的远程统中产生反应式氧原子(步骤204)。例如，在一远程高密度等离子体产生器中，供以4000至6000瓦特(例如，5500瓦特)的射频功率给复合气体流好产生氧原子，该复合气体流包括氩气(其流速，例如约900至约1800sccm)与氧气(其流速，例如约600至约1200sccm)。接着将远程产生的氧原子前体导入反应腔(步骤206)。
亦将有机硅前体导入反应腔(步骤208)。藉由将有机硅化合物(气体或液体)与载气(例如，氦或氢分子)混合而将此类前体导入沉积腔。举例来说，以约600至约2400sccm的流速让氦通过室温为液态的有机硅前体(例如，八甲基环四硅氧「OMCTS」)而冒出，以提供流速约800至约1600mgm的八甲基环四硅氧流给腔室。
腔室中，氧原子与硅前体彼此互相反应以形成最初的氧化物层于基板上(步骤210)。氧化物层沉积过程中腔室内的整体压力为，例如约0.5托尔(Torr)至约6托尔。较高的整体压力(例如，1.3托尔)将沉积更具流动特性的氧化物层，而较低的整体压力(例如，0.5托尔)将沉积更高程度的同形(conformal)氧化物层。由于氧原子为高度反应物质，所以反应腔内的沉积温度则相当地低(例如，约100℃或更低)。氧化物沉积速率在每分钟约
Figure GSB00000221570200081
至约
Figure GSB00000221570200082
范围之间(例如，每分钟)。该层的厚度约
Figure GSB00000221570200084
至约
Figure GSB00000221570200085
低k值氧化物膜沉积后，接着执行一热能退火处理(步骤212)。这退火处理包括将最初沉积的氧化物层温度提高到约300℃至约600℃(例如，约350℃至约400℃；约380℃等)。热能退火处理环境包括干燥氮、氦、氩等惰性气体，以及约15毫托尔至约760托尔(例如，约50托尔)的腔室压力。氧化物层经历热能退火处理约1分至约30分钟(例如，约1分钟)，然后产生具有较低湿度与较高硬度(相对于最初的沉积膜层)的退火处理过的氧化物层。由于热能退火处理无法完全移除水分与硅醇，因此该层的硬度低于完全干燥且没有硅醇的氧化物的硬度。例如，热能退火处理后的膜层具有约0.5Gpa或更低的硬度(例如，0.1Gpa至0.5Gpa)。相同地，膜层的介电常数通常高于完全干燥的氧化物层，且具有高于4.0的热能退火处理后k值。
接着执行第二次等离子体退火处理(步骤214)于热能退火处理过的氧化物层上。藉由将晶片基板暴露在等离子体(由一或多种诸如氦或氩的惰性气体所产生)下而执行等离子体退火处理。可由诱导耦合等离子体(ICP)产生等离子体且可原位产生于反应腔内。用来产生等离子体的射频功率约为1000瓦特至约9600瓦特(例如，约1800瓦特)，而腔室内的等离子体压力约为2毫托尔至约50毫托尔(例如，约20毫托尔)。等离子体退火处理过程中，将晶片由约350℃加热至约400℃(例如，约380℃)，而将该氧化物层暴露在等离子体下约1至约10分钟(例如，约3分钟)。等离子体退火处理后，该层的水分与硅醇浓度实质上接近零。该层的硬度实质上相同于无水分与硅醇的低k值氧化硅(例如，约1.2Gpa)。该层亦具有低于2∶1的湿式蚀刻速率比值(例如，约1.8∶1至约1.4∶1)。相同地，该层的k值可能低于3.0。在一金属化基板的热预算温度下(例如，约600℃)，退火处理过的氧化物层亦一致且稳定的。
图3显示根据本发明实施例的介电质沉积与紫外光/等离子体退火处理方法300中所选步骤的流程图。相似于方法200，方法300包括提供基板给沉积腔(步骤302)，且产生氧原子前体(步骤304)，且将其导入该沉积腔中(步骤306)。亦将硅前体(例如，有机硅化合物)导入该腔室(步骤308)，且与该氧原子前体反应以形成最初氧化物层(步骤310)。此最初沉积后，接着执行两步式退火处理以由该氧化物层中移除水分与硅醇基。
第一退火处理步骤包括将最初沉积的氧化硅层暴露在紫外光下(步骤312)。紫外光可藉由移除水分与断裂硅醇(即，Si-OH)键结而提高该膜层的硬度与降低该膜层的k值。例如，硅醇键结吸收约200纳米的紫外光辐射，而该辐射将该硅醇转换成氧化硅与水蒸气。
可由一或多个照耀基板的紫外光源提供紫外光。这些紫外光源包括一紫外光灯泡，其散发广谱波长(包括非紫外光波长)的光，而其具有位在紫外光波长上(例如，220纳米)的波峰强度。紫外光灯泡的实例包括氙气灯(散发波长的波峰为172纳米)、水银灯(波峰在243纳米)、氘灯(波峰在140纳米)与氯化氪(KrCl2)灯(波峰在222纳米)等类型的紫外光灯泡。额外的紫外光源包括提供连贯窄频的紫外光给氧化物层的雷射。雷射光源包括准分子雷射(例如，氯化氙「XeCl」、氟化氪「KrF」、氟「F2」等准分子雷射)与/或适当的固态雷射(例如，掺钕钇铝石榴石雷射「Nd-YAG lasers」)的谐波。紫外光源亦包括二极管紫外光源。
滤光器与/或单色计可用来缩小到达氧化物层的光线的波长范围。例如，滤光器可阻挡低于170纳米波长的光线好避免紫外光退火处理移除该层中的碳。
将氧化物层暴露在紫外光源下约10秒至60分钟。典型的暴露时间约为1分钟至10分钟(例如，约2分钟至约5分钟)。紫外光退火处理步骤过程中氧化物层的温度约为25℃至900℃。在氧化物层处于含有氦、氩、氮气、氧化亚氮、氨、臭氧、水或上述的混合物的空气中时，执行紫外光暴露。紫外光暴露过程中腔室内的空气压力介于约1托尔至600托尔之间。
紫外光退火处理后，接着执行等离子体退火处理于该氧化物层上(步骤314)。此第二次退火处理移除实质上所有残存的水与硅醇基，以提供高品质(例如，1.2Gpa的硬度)、低k值(例如，约3.0或更小的k值)的氧化硅层。相似于方法200中的等离子体退火处理步骤214，藉由将该晶片基板暴露在等离子体下(由一或多种诸如氦或氩的惰性气体所产生)而执行等离子体退火处理步骤314。可藉由诱导耦合等离子体(ICP)产生等离子体且可原位产生于反应腔内。等离子体退火处理过程中，将晶片由约350℃加热至约400℃，且将该氧化物层暴露在等离子体下约1至10分钟。退火处理后该层中的水分与硅醇浓度实质上接近零。
现在参照图4，显示一根据本发明实施例的多层式介电质沉积与热能/等离子体退火处理400中所选步骤的流程图。方法400包括提供基板给沉积腔(步骤402)，且沉积第一介电层于该基板上(步骤404)。介电层可以为藉由氧原子与有机硅前体反应形成的氧化硅层。藉由高密度等离子体解离含氧气体(例如，氧气)远程产生该氧原子前体。第一氧化物层的厚度约为
Figure GSB00000221570200101
至
Figure GSB00000221570200102
之间(例如，约
Figure GSB00000221570200103
至约)。
沉积后，接着于两步式退火工艺中退火处理第一介电层。第一退火步骤406包括紫外光或热能退火处理以提高该层的硬度。接着，执行第二退火处理步骤408以进一步由该层中移除水分与硅醇键结。这可藉由将该介电层暴露在惰性等离子体的等离子体退火处理下来达成。在退火处理两步骤过程中的介电层温度维持在约300℃至约600℃之间(例如，约350℃至约400℃)。第一介电层的第一次与第二次退火处理会持续约30秒至约10分钟。
接着形成第二介电层(步骤410)于该基板上(现具有第一介电层)。可由相同于第一介电层的前体(例如，氧原子与有机硅前体)形成第二介电层。亦以大约相同于第一层的厚度形成第二介电层(例如，约
Figure GSB00000221570200111
至约)。
沉积后，接着于两步式退火工艺中退火处理第二介电层。第一退火步骤412包括紫外光或热能退火处理以提高该层的硬度并减少该膜层中的水分与硅醇量。接着，执行第二退火处理步骤414以进一步由该层中移除水分与硅醇键结。这可藉由将该介电层暴露在惰性等离子体的等离子体退火处理下达成。在退火处理两步骤过程中的介电层温度维持在约300℃至约600℃之间(例如，约350℃至约400℃)。第二介电层的第一次与第二次退火处理会持续约30秒至约10分钟。
会重复许多次地(未显示)执行介电沉积与两阶段退火处理循环，直到形成该介电材质至所欲的厚度。例如，假设每个介电层的厚度为而所欲的整体薄膜厚度为1.2μm，那么需要执行12次沉积与退火处理循环。各个沉积层的厚度可藉由调控影响氧化物沉积速率的参数来设定，该参数包括诸如反应前体的类型与流速、沉积腔中的整体压力以及温度等参数。如上述提到，典型的氧化物层沉积速率每分钟约
Figure GSB00000221570200114
至约
Figure GSB00000221570200115
(例如，约每分钟
Figure GSB00000221570200116
)。
示范性沉积与退火处理系统
执行本发明实施例的沉积系统包括高密度等离子体化学气相沉积(high-density plasma chemical vapor deposition，HDP-CVD)系统、等离子体辅助化学气相沉积(plasma enhanced chemical vapor deposition，PECVD)系统、次大气压化学气相沉积(sub-atmospheric chemical vapor deposition，SACVD)系统与热能化学气相沉积系统等类型的系统。执行本发明实施例的化学气相沉积系统的特定实例包括CENTURA ULTIMATM高密度等离子体化学气相沉积腔/系统与PRODUCERTM等离子体辅助化学气相沉积腔/系统(Applied Materials，Inc.，Santa Clara，California)。
一个适当的沉积与退火处理系统(其中可修改用来应用依照本发明的实施例)显示与描述于共同让渡的美国专利公开案第US2005/0250340(美国专利申请案第10/841,582号)中(由Chen等人于2004年5月7日提申)，其在此以参考方式并入本文中。
现在参照图5A，高密度等离子体化学气相沉积(HDP-CVD)系统510，其中根据本发明的一膜层会沉积于硝酸铝构件(例如，喷嘴、挡板等)上。系统510包括一腔室513、一真空系统570、一等离子体源系统580A、一偏压等离子体系统580B、一气体输送系统533与一远程等离子体清洁系统550。
腔室513的较高部分包括一圆盖514，其由陶质介电材质(例如，氮化铝)所制成。圆盖514界定一等离子体处理区516的上部界线。等离子体处理区516其底部的边界在基板517与基板支撑构件518的上表面。
加热板523与冷却板524装设在圆盖514上端且与其热能耦接。加热板523与冷却板524可调控圆盖温度至约100℃至约200℃范围上下10℃之间。这让圆盖达到最有效的温度好应付不同处理。例如，乐见将清洁或蚀刻处理的圆盖温度维持高于沉积处理时的温度。圆盖温度的准确调控亦减少腔室内成片剥落或粒子数目，且改善沉积层与基板之间的黏着性。
腔室513较低的部分包括一腔体构件522(其连结腔室与真空系统)。基板支撑构件518的底座部分521固定在腔体构件522上，并与腔体构件522形成一连续性内表面。机械片(未显示)经由腔室513侧边的插入/移出开口(未显示)将基板传入与传出腔室513。在马达(未显示)的调控下升高然后降下举升销(亦未显示)，好将基板从机械片(在较高的负载位置557)上移至较低的处理位置556，其中该基板被置于基板支撑构件518的基板接收部分519。基板接收部分519包括一静电块520，其在基板处理过程中，将基板固定于基板支撑构件518上。一实施例中，基板支撑构件518由铝陶瓷复合(例如，氮化铝)材质所构成。
真空系统570包括节流阀体(throttle body)525，其内含双叶式节流阀526，且该节流阀体连结于闸阀(gate valve)527与涡轮分子泵浦(turbo-molecular pump)528。应当注意的是节流阀体525提供气流极小的阻碍，且能够对称式抽吸，如同描述于共同让渡的美国专利申请案第08/574,839号(1995年12月12日提伸)，其在此以参考方式并入本文中。闸阀527可分隔泵浦528与节流阀体525，当节流阀526完全打开时，闸阀527亦可藉由限制排出流动的能力来调控腔室压力。节流阀体、闸阀与涡轮分子泵浦的配置可精确与稳定地调控腔室压力介于约1毫托尔至约2托尔之间。
等离子体源系统580A包括装设于圆盖514上的顶线圈(top coil)529与侧线圈(side coin)530。对称式接地屛蔽(ground shield)(未显示)减少这些线圈之间的电耦合。顶线圈529藉由顶端的射频源(SRF)产生器531A供以动力，而侧线圈530藉由侧端的射频源(SRF)产生器531B供以动力，让各个线圈具有独立功率量与操作频率。这种双重式线圈系统可调控腔室513内的放射离子密度，因而改善等离子体的均一性。一般来说侧线圈530与顶线圈529感应式驱动，并不需要相应电极(complimentary electrode)。一实施例中，顶端的射频源产生器531A在名义上2MHz下提供高达10,000瓦特的射频功率，而侧端的射频源产生器531B在名义上2MHz下提供高达10,000瓦特的射频功率。由名义上的执行频率(例如，分别高达1.7-1.9MHz与1.9-2.1MHz)抵销顶端与侧端射频产生器的操作频率以改善等离子体产生效率。
偏压等离子体系统580B包括一射频偏压(BRF)产生器531C与一偏压匹配网络532C。偏压等离子体系统580B电容式耦接基板部分517与腔体构件522，其作为一相应电极。偏压等离子体系统580B适合用来增进传送等离子体源系统580A产生的等离子体物质(例如，粒子)至基板表面。一特定实施例中，射频偏压产生器在13.56MHz下提供高达5,000瓦特的射频功率。
射频产生器531A与531B包括数字调控式合成器，且运转约1.8至约2.1MHz的频率振幅。各个产生器包括一射频调控电路(未显示)，该电路测量由腔室与线圈反射至产生器的功率，且调整运转频率以得到最少的反射功率(熟悉技术人士可以理解)。一般将射频产生器设计成可运转于50欧姆阻抗的负载中。具有与产生器不同阻抗的负载会反射射频功率。这会降低送至负载的功率。此外，由负载反射给产生器的功率会过度负载且损害该产生器。由于等离子体的阻抗范围可小于5欧姆以及大于900欧姆(取决于等离子体离子密度等因素)，且由于反射的功率为频率的一种函数，因此根据反射的功率而调整产生器频率以提高射频产生器传送给等离子体的功率且保护该产生器。另一减少反射功率与改善效率的方式为利用匹配网络(matching network)。
匹配网络532A与532B将产生器531A与531B的输出阻抗匹配于各自的线圈529与530。射频调控电路藉由改变匹配网络内电容器的数值来协调两个匹配网络，好随着负载变化将产生器匹配于负载。当负载反射回产生器的功率超过某一限度时，射频调控电路会调整匹配网络。一个提供固定匹配且有效让射频调控电路不再协调匹配网络的方式为，将反射功率的限度设定成高于任何预期的反射功率数值。这有助在某些情况下稳定等离子体(藉由维持匹配网络固定于其最近的状态)。
其它方法亦有助于稳定等离子体。例如，射频调控电路可用来测定传送给负载(等离子体)的功率，且可提高或降低产生器输出功率以在一膜层沉积过程中维持实质上不变的传送功率。
气体输送系统533由许多来源提供气体，来源包括经由气体输送管线538(仅显示某一部分)处理基板的534A-534F腔室。如熟悉技术人士可理解般，534A-534F来源实际上所用的来源与实际上的连接(输送管线538至腔室513)随着执行于腔室513内的沉积与清洁处理而有所改变。气体经由气体环537与/或顶喷嘴545导入腔室513。气体环537与/或顶喷嘴545可由氮化铝构成。图5B腔室513的一简化、部份横剖面图式，其显示更详细的气体环537。
一实施例中，第一与第二气体源(534A与534B)与第一与第二气体流量控制器(535A’与535B’)经由气体输送管线538(仅显示某一部分)提供气体给气体环537中的环状空间536。气体环537具有多个提供一致气体流于基板上的气体喷嘴539(仅显示一个以便描述)。可改变喷嘴长度与喷嘴角度以符合特定处理(个别腔室内)的外观一致性与气体利用效率。一实施例中，气体环537具有112个由氮化铝构成的气体喷嘴539。
气体环537亦具有多个气体喷嘴540(仅显示其中之一)，这些喷嘴与来源气体喷嘴539位于同一平面但比较短，而一实施例中，气体喷嘴540接收来自主体空间(body plenum)541的气体。气体喷嘴540可由氮化铝构成。气体注入腔室513前不欲混合气体的某些实施例中，气体喷嘴539与540彼此不流动地耦接。其它实施例中，藉由提供主体空间541与气体环状空间536之间的隙缝(未显示)，可在气体注入腔室513前混合气体。一实施例中，第三与第四气体源(534C与534D)与第三与第四气体流量控制器(535C与535D’)可经由气体输送管线538提供气体给主体空间。例如543B(未显示其它阀)的附加阀可关断由流量控制器至腔室的气体。
在使用易燃、有毒或腐蚀性气体的实施例中，乐见沉积后排除留在气体输送管线内的气体。这可利用三通阀(例如543B阀)来完成，例如，隔离腔室513与输送管线538A以及排出输送管线538A至真空前置管线544。如图5A所示，其它相似阀(诸如，543A与543C)可并入其它气体输送管线。尽可能将上述的三通阀接近腔室513而设置以减少输送管线未排出气体的容积(三通阀与腔室之间)。再者，可将两通(开-关)阀(未显示)置于质量流量控制器(MFC)与腔室之间，或气体源与质量流量控制器之间。
再度参照图5A，腔室513亦具有顶喷嘴545(由氮化铝所构成)与顶气口(top vent)546。顶喷嘴545与顶气口546可独立调控气体的上方与侧边流动，这改善薄膜的一致性且可微调薄膜的沉积与掺杂参数。顶气口546为一环绕顶喷嘴545的环型开口。一实施例中，第一气体源534A提供来源气体喷嘴539与顶喷嘴545。来源喷嘴的质量流量控制器535A’调控送至来源气体喷嘴539的气体量，而顶喷嘴的质量流量控制器535A调控送至顶气体喷嘴545的气体量。同样地，两个质量流量控制器535B与535B’可用来调控单一氧气源(例如，来源534B)进入顶气口546与氧化剂气体喷嘴540的氧气流动。供应给顶喷嘴545与顶气口546的气体在流入腔室513前可保持分离，或在流入腔室513前于顶空间(top plenum)548中混合。可用不同来源的相同气体来供应腔室的不同部分。
提供远程微波产生式等离子体清洁系统550以周期性由腔室零件上清除沉积残余物。清洁系统包括远程微波产生器551，该系统在反应腔553内以清洁气体源534E(诸如，氟分子、三氟化氮、其它碳氟化合物或均等物)的气体产生等离子体。此类等离子体所产生的活性物质经由涂抹管(applicator tube)555、清洁气体进给端口554运送至腔室513。用来容纳清洁等离子体的材质(例如，反应腔553与涂抹管555)需可抵抗等离子体的侵害。实用上，反应腔553与进给端口554之间的距离越短越好，因为所欲的等离子体物质浓度会随着离开反应腔553的距离而减少。在远程腔室内产生清洁等离子体可运用有效的微波产生器，且不会使腔室零件遭受存在于等离子体产生地点的温度、辐射或辉光放电(glow discharge)的粒子冲击。因此，相对敏感性零件(例如，静电块520)便不须以挡片晶片覆盖或其它保护，但若是原位等离子体清洁处理则需要这些保护。
系统调控器560控制系统510的运作。调控器560包括一内存562，诸如硬盘、软盘(未显示)与一耦接于处理器561的卡架(card rack)(未显示)。卡架包括单板机(single-borad computer，SBC)(未显示)、模拟与数字输入/输出板(未显示)、接口板(未显示)与步进式电动控制板(stepper motor controller boards)(未显示)。系统调控器符合欧洲插卡式模块(Versa Modular European，VME)标准，该标准界定电路板、卡槽(card cage)与连接器的尺寸与类型。VME标准亦界定总线结构为16位数据总线与24位地址总线。在储存于硬盘上的计算机程序或经由其它计算机程序(例如，储存于卸除式磁盘中的程序)的调控下运转统调控器531。计算机程序制定下列参数：诸如时间、混合的气体、射频功率强度与特定处理的其它参数。如图5C所示，使用者与系统调控器之间的接口经由显示器(例如阴极射线管「CRT」565)与光笔566。
图5C一用于连接图5A示范性化学气相沉积处理腔的示范性系统使用者接口的部分图标。系统调控器560包括一耦接于计算机可读式内存562的处理器561。内存562最好为硬盘，但内存562可为其它类型的内存，诸如只读存储器(ROM)、可编程程序只读存储器(PROM)等等。
在储存于内存562内的计算机可读式形式的计算机程序563调控下运转系统调控器560。计算机程序制定下列参数：时间、温度、气体流、射频功率强度与特定处理的其它参数。使用者与系统调控器之间的接口经由阴极射线管显示器(CRT monitor)565与光笔566(图5C所示)。可运用两个显示器(565与565A)与两支光笔(566与566A)，其中一个(565)镶嵌于清洁室壁(操作者用)，而另一个(565A)位在该壁后面(设备技术员用)。两个显示器可同时显示相同的信息，但仅可用一只光笔(例如，566)。为了选择特定的屏幕区域或功能，操作者触碰显示器屏幕上选定的区域，然后按下光笔上的按钮(未显示)。举例来说，触碰的区域藉由改变其强调颜色或显示一个新的选单以证实其被光笔所挑选。
可用任何已知的计算机可读式程序语言来编写计算机程序编码：例如，68000汇编语言(assembly language)、C、C++、Pascal、Fortran或其它。利用已知的文件编辑器将适当的程序编码输入成单一档案或多个档案，且存于或具现于计算机可用式媒体(computer usable medium)，例如计算机的内存系统。假若输入的编码文件为高级语言，那么编译该编码，然后合成的编译码接着链接(linked)于预先编译的Microsoft Window
Figure GSB00000221570200161
程序库程序(library routines)的目的码(object code)。为了执行链接、已编译的目的码，系统使用者希望目的码引发计算机系统读取内存中的编码。中央处理器(CPU)接着读取与执行编码好完成程序中识别的工作。
图5D显示计算机程序580递阶控制结构的一描述性方块图标。使用者藉由利用光笔接口响应阴极射线管显示器上显示的选单或屏幕，而将处理设定序号与处理腔室编号输入处理选择子程序(process selector subroutine)582中。处理设定为能够实施特定处理的预定处理参数，且可被预先界定的处理设定序号所辨认。处理选择子程序582确认(i)多腔室系统中所欲的处理腔，以及(ii)足以操作处理腔执行所欲处理的所欲处理参数设定。执行特定处理的处理参数关于下述状态：处理气体组成与流速、温度、压力、等离子体环境(例如，射频功率强度)以及腔盖温度，且以处方方式提供给使用者。利用光笔/阴极射线管显示器接口输入处方指定的参数。
系统调控器560的模拟与数字输入板提供监测处理的信号，而系统调控器560的模拟与数字输出板输出调控处理的信号。
处理排序子程序(process sequencer subroutine)584包括接收来自处理选择子程序582所识别的处理腔室与处理参数设定的程序编码，以及调控不同处理腔运转的程序编码。多个使用者可输入处理设定序号与处理腔室编号，或单一使用者可输入多个处理设定序号与处理腔室编号；排序子程序584以所欲的顺序中安排所选的处理。排序子程序584最好包括可执行下列步骤的程序编码：(i)监测处理腔的运转以测定腔室是否正在使用，(ii)测定正在使用的腔室中执行哪种处理，以及(iii)基于处理腔室的可得性与即将实施的处理类型执行所欲的处理。可运用已知监测处理腔的方法，例如轮询(polling)。在安排执行哪个处理时，可将排序子程序584设计用来考虑「各个特定使用者年纪-输入要求」或正在使用的处理腔当前状况与选择所欲处理状况的比较；或任何其它的重大因子，其为系统程序设计师想要包含在内用以测定排序优先性。
排序子程序584决定接下来执行哪个处理腔与处理设定组合后，排序子程序584藉由传递特定处理设定参数给腔室管理子程序586A-C而开启处理设定的执行，而该腔室管理子程序根据由排序子程序584送来的处理设定调控腔室513中的多个处理工作以及可能调控其它腔室(未显示)。
腔室组件子程序(chamber component subroutines)的实例为基板定位子程序588、处理气体调控子程序590、压力调控子程序592与等离子体调控子程序594。那些熟悉技术的人士可理解其可根据哪种处理被挑选用在腔室513内执行来包括其它腔室调控子程序。实施中，腔室管理子程序586B依照将被执行的特定处理设定选择性地安排或呼唤处理组件子程序。腔室管理子程序586B安排处理组件子程序的方式相同于排序子程序584安排处理腔室与执行的处理设定的方式。一般而言，腔室管理子程序586B包括以下步骤：监测多个腔室组件，基于即将执行的处理设定的处理参数决定哪个组件需要运转，以及响应监测与决定步骤引发腔室组件子程序的执行。
现将参照图5A与5D描述特定腔室组件子程序的运转。基板定位子程序588包括调控腔室组件的程序编码，该腔室组件被用来负载基板至基板支撑构件518上。基板定位子程序588亦(在其它处理已经完成后)调控一基板由例如，等离子体辅助化学气相沉积反应器或多腔室系统中其它反应器，传送至腔室513。
处理气体调控子程序590具有调控处理气体组成与流速的程序编码。子程序590调控安全性闭锁阀(shut-off valve)的开启/关闭位置，以及上升/下降(ramp up/ramp down)质量流量调控器以获得所欲的气体流速。所有腔室组件子程序(包括处理气体调控子程序590)均可由腔室管理子程序586B引发。子程序590由腔室管理子程序586B接收有关所欲气体流速的处理参数。
一般而言，处理气体调控子程序590打开气体供应管线，且若需要可重复下述步骤，(i)读取必备的质量流量调控器，(ii)比较读取值与由腔室管理子程序586B所接收的所欲流速，以及(iii)调整气体供应管线流速。再者，处理气体调控子程序590可包括下列步骤，监测不安全速度的气体流速，当监测到不安全状况时活化安全性闭锁阀。
某些处理中，惰性气体(例如，氩)流入腔室513以稳定腔室内的压力直到导入活性处理气体。针对这些处理，设计处理气体调控子程序590包括下述步骤，将惰性气体流入腔室513一段时间(稳定腔室内压力所需)。而接着实施上述的步骤。
此外，当处理气体由液态前体(诸如，四乙基硅酸盐、八甲基环四硅氧等)蒸发而来，处理气体调控子程序590会包括下列步骤：将运送气体(例如，氦)冒泡穿过起泡配件中的液态前体，或将氦导入液体注射阀。针对这类型的处理，处理气体调控子程序590调节运送气体的流动、起泡器内的压力以及起泡器温度以得到所欲的处理气体流速。如上所述，所欲的处理气体流速被送至处理气体调控子程序590作为处理参数。
再者，处理气体调控子程序590包括下列步骤：藉由存取含有特定处理气体流速所必须的数值的储存表格，而获得所欲处理气体流速必需的运送气体流速、起泡器压力以及起泡器温度。一但获得必需的数值，侦测运送气体流速、起泡器压力与起泡器温度并与必需的数值作比较好依此调整。
处理气体调控子程序590亦藉由一独立式氦调控(independent helium control，IHC)子程序(未显示)通过晶片块内的内部与外部信道，调控热能传输气体(例如，氦)的流动。气体流将基板热耦接于晶片块上。一典型处理中，晶片受到等离子体与形成膜层的化学反应的加热，而氦通过晶片块(水冷式)冷却基板。这使基板低于会伤害已经存在于基板上的特征的温度。
压力调控子程序592包括藉由调节腔室排出部分的节流阀526的开口大小而调控腔室内压力的程序编码。至少有两种以节流阀调控腔室的基本方法。第一种方法依靠描绘与腔室压力相关的总处理气体流、处理腔大小与泵浦能力等等。第一种方法将节流阀526固定在一位置上。将节流阀52安装至一固定位置最终造成稳定态压力。
再者，可测得腔室压力(例如，以一压力计)且可根据压力调控子程序592调整节流阀526的位置，先决条件为调控点位在气体流动与排出能力界限之内。前者的方法会导致腔室压力快速的改变，而与后者的方法相关的测量、比较与计算则不会引发腔室压力快速的改变。在不需精确调控腔室压力下乐见使用前者的方法，但在预期一准确、可重复性以及稳定压力下(例如，薄层沉积过程中)乐见使用后者的方法。
当唤起压力调控子程序592时，所欲、或目标的压力程度以参数方式由腔室管理子程序586B所接收。压力调控子程序592藉由读取一或多个连结到腔室的已知压力计来测量腔室内压力；比较所测得的数值与目标压力值；由相对目标压力的储存压力表获得比例、整体与差别(proportional，intergral and differential，PID)数值，且根据由压力表获得的PID值调整节流阀526。再者，压力调控子程序592会打开或关上节流阀526至一特定开启大小好调节腔室内的压力至一所欲的压力或压力范围。
等离子体调控子程序594包括调控射频产生器531A与531B频率与功率输出设定的程序编码，以及协调匹配网状系统532A与532B的程序编码。等离子体调控子程序594如同之前描述的腔室组件子程序一般，由腔室管理子程序586B所引发。
已经描述许多实施例，熟悉技术的人士可以理解，其可在不悖离本发明的精神下使用许多修改物、替换构造与均等物。再者，并未描述许多知名的处理方式与组件好避免对本发明造成不必要的混淆。因此，上述内容不应被视为本发明范围的限制性。
此处所提供的数值范围，可以理解各个介于范围较高与较低限制值之间的中间值(除非文中另有明确指出，否则到较低限制值的单位的十分之一)亦明确地被揭示。任何所述数值之间的各个较小范围；或所述范围与任何其它所述数值的中间值；或所述范围的中间值均包含在其中。这些较小范围的较高与较低限制值可单独地被包括在范围内或排除在范围外，且各个范围的限制值(任一、两者皆无、两者皆有)被包含在较小范围亦包含在本发明中，其属于所述范围内任何特别排除在外的限制值。所述范围包括一或两个限制值，亦包括排除任一或两者限制值的范围。
此处与附加的权利要求书中所用的单数形式「一(a)」、「一(an)」与「该」包括多个所指对象，除非文中另有明确指出。因此，举例来说，提到「一处理」包括多个此类处理，而提到「该前体」包括所指的一或多个前体与熟悉技术人士所知的均等物等等。
同样地，应用于本说明书与接下来的权利要求书的词汇「包括」、「包含」，其用来明确指明所述的特征、整体、成分或步骤的存在，但并不排除一或多个其它特征、整体、成分、步骤、行动或群组的存在或附加。

Claims (32)

1.一种制造一个氧化硅层于一基板上的方法，该方法至少包含：
在一反应腔内形成该氧化硅层于该基板上，而此过程藉由使一氧原子与一硅前体反应并沉积反应产物于该基板上，其中该氧原子产生于该反应腔外；以及
在一600℃或更低的温度下加热该氧化硅层，然后将该氧化硅层暴露在一感应耦合等离子体(induced coupled plasma)下。
2.如权利要求1的方法，其中该氧化硅层被加热至一300℃至600℃之间的温度。
3.如权利要求1的方法，其中该氧化硅层被加热至380℃。
4.如权利要求1的方法，其中该氧化硅层被加热1分钟至30分钟。
5.如权利要求1的方法，其中该氧化硅层被加热1分钟。
6.如权利要求1的方法，其中该氧化硅层于该反应腔内一15毫托尔至760托尔的一氮气压力下被加热。
7.如权利要求6的方法，其中该压力为50托尔。
8.如权利要求1的方法，其中该等离子体包含一氦或氩前体。
9.如权利要求1的方法，其中在将该氧化硅层暴露在该等离子体下的过程中，其具有一300℃至600℃之间的温度。
10.如权利要求9的方法，其中在暴露在等离子体下的过程中，所述氧化硅层具有380℃的温度。
11.如权利要求1的方法，其中一在1000瓦特至9600瓦特的一功率强度下运转的射频功率源用来产生该等离子体。
12.如权利要求11的方法，其中该功率强度为1800瓦特。
13.如权利要求1的方法，其中该反应腔在暴露该氧化硅层给该等离子体过程中具有一2毫托尔至50毫托尔的压力。
14.如权利要求13的方法，其中在暴露该氧化硅层给该等离子体过程中该反应腔具有20毫托尔的压力。
15.如权利要求1的方法，其中将该氧化硅层暴露在该等离子体下1分钟至10分钟。
16.如权利要求15的方法，其中将该氧化硅层暴露在该等离子体下3分钟。
17.如权利要求1的方法，其中将该氧化硅层暴露在该感应耦合等离子体前，以600℃或以下的温度加热该氧化硅层1分钟至30分钟。
18.一种形成一个氧化硅层于一基板上的方法，该方法至少包含：
在一反应腔内形成该氧化硅层于该基板上，而此过程藉由使一氧原子与一硅前体反应并沉积反应产物于该基板上，其中该氧原子产生于该反应腔外；以及
将该氧化硅层暴露在紫外光下，然后将该氧化硅层暴露在一感应耦合等离子体下。
19.如权利要求18的方法，其中在将该氧化硅层暴露在该紫外光下的过程中，该氧化硅层具有一25℃至900℃之间的温度。
20.如权利要求18的方法，其中将该氧化硅层暴露在该紫外光下的过程中，该氧化硅层具有一300℃至600℃之间的温度。
21.如权利要求18的方法，其中该紫外光在220纳米波长处具有一峰值强度。
22.如权利要求18的方法，其中将该氧化硅层暴露在该紫外光下10秒至60分钟。
23.如权利要求18的方法，其中将该氧化硅层暴露在该紫外光下30分钟。
24.如权利要求18的方法，其中该氧化硅层在一气氛中暴露于该紫外光下，该气氛包括氦、氩、氮、氧化亚氮、氨、臭氧或水。
25.如权利要求24的方法，其中该反应腔内该空气的压力为1托尔至600托尔。
26.一种沉积与退火处理一晶片基板上的一个氧化硅层的方法，该方法至少包含：
提供该晶片基板给一高密度等离子体化学气相沉积(HDP-CVD)处理腔，氧化硅层的沉积即于该HDP-CVD处理腔中进行；
在该高密度等离子体化学气相沉积处理腔外提供一远程等离子体产生装置，其中该远程等离子体产生装置用来产生供应给该高密度等离子体化学气相沉积处理腔的一氧原子；
供应一硅前体给该高密度等离子体化学气相沉积处理腔，其中该硅前体与该氧原子进行反应以形成该氧化硅层于该晶片上；
执行一第一退火处理于该沉积的氧化硅层上，其中该第一退火处理包括将该层加热至一300℃至600℃的温度1分钟至30分钟；以及
执行一第二退火处理于该沉积的氧化硅层上，其中该第二退火处理包括将该层暴露在一高密度氩等离子体下1分钟至10分钟。
27.如权利要求26的方法，其中执行该第一退火处理与第二退火处理4分钟至10分钟。
28.如权利要求26的方法，其中执行该第一退火处理1分钟而执行该第二退火处理3分钟。
29.如权利要求26的方法，其中在380℃下执行该第一退火处理与第二退火处理。
30.如权利要求26的方法，其中该硅前体选自下列物质所构成的群组中：八甲基环四硅氧(octamethylcyclotetrasiloxane，OMCTS)、四甲基硅酸盐(tetramethylorthosilicate，TMOS)及上述的混合物。
31.如权利要求26的方法，其中该氧原子在该远程等离子体产生装置中利用等离子体解离氧分子而产生。
32.如权利要求26的方法，其中该晶片基板在该氧化硅层形成过程中维持在一30℃至75℃的温度下。
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