CN101348902B - 具有狭缝阀补偿的扩散板 - Google Patents

具有狭缝阀补偿的扩散板 Download PDF

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CN101348902B
CN101348902B CN2008100997607A CN200810099760A CN101348902B CN 101348902 B CN101348902 B CN 101348902B CN 2008100997607 A CN2008100997607 A CN 2008100997607A CN 200810099760 A CN200810099760 A CN 200810099760A CN 101348902 B CN101348902 B CN 101348902B
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hollow cathode
cathode chamber
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崔寿永
约翰·M·怀特
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Abstract

本发明主要包括一种用于PECVD腔室的扩散板。该扩散板包括多个中空阴极腔。与处理腔室内的狭缝阀最接近设置的扩散板的边缘可具有中空阴极腔的形状和/或尺寸，其被调整以补偿狭缝阀的邻近区域。通过调整最靠近狭缝阀的中空阴极腔的形状和/或尺寸，扩散板可允许整个处理腔室上的均匀等离子体分布，并由此，允许在PECVD工艺期间基板上的均匀薄膜厚度。

Description

具有狭缝阀补偿的扩散板
技术领域
本发明的实施方式主要涉及一种用于化学沉积(CVD)系统的扩散板，该系统设计为补偿由腔室狭缝阀造成的等离子体不均匀。
背景技术
等离子体增强化学气相沉积(PECVD)是一种常用于在半导体基板上沉积多种薄膜的沉积方法。PECVD近来用于在大面积基板诸如太阳能平面基板、平面显示器基板以及大面积薄膜晶体管基板上沉积薄膜。市场竞争不断驱使降低平板显示器的成本同时增加基板的尺寸。在平板显示器产业中基板尺寸大于1平方米很普遍。
气体扩散板可用于确保整个处理腔室中沉积等离子体的均匀分布。等离子体的均匀分布可有助于整个基板上的薄膜均匀性。然而，随着基板尺寸的增加，在处理腔室内获得等离子体的均匀分布成为一个难题。因此，现有技术需要一种改进的气体扩散板。
发明内容
本发明主要包括一种用于PECVD腔室的扩散板。该扩散板包括多个中空阴极腔。与处理腔室内的狭缝阀最接近放置的扩散板的边缘可具有中空阴极腔的形状和/或尺寸，其被调整以补偿狭缝阀的邻近区域。通过调整最接近狭缝阀的中空阴极腔的形状和/或尺寸，扩散板可允许整个处理腔室中的均匀等离子体分布，并由此，允许在PECVD工艺期间基板上的均匀薄膜厚度。
在一个实施方式中，公开了一种气体分配板组件。该组件包括：扩散板元件，该扩散板元件具有上游侧、下游侧、与处理腔室中的狭缝阀邻近设置的第一边缘、中心和第二边缘；以及穿过上游侧和下游侧之间的多个气体通道。多个气体通道包括：第一气体通道，其具有邻近扩散板元件的第一边缘设置的第一中空阴极腔；第二气体通道，其具有邻近扩散板元件的中心设置的第二中空阴极腔；以及第三气体通道，其具有邻近第二边缘设置的第三中空阴极腔，其中第一中空阴极腔、第二中空阴极腔和第三中空阴极腔具有不同的容积。
在另一实施方式中，公开了一种等离子体处理腔室。该腔室包括：具有多个壁的腔室主体；设置在多个壁的至少其中之一中的一个或多个狭缝阀；以及扩散板。该扩散板包括：扩散板元件，其具有上游侧、下游侧，与一个或多个狭缝阀的狭缝阀邻近设置的第一边缘、中心和第二边缘；以及穿过上游侧和下游侧之间的多个气体通道。多个气体通道包括：第一气体通道，其具有邻近扩散板元件的第一边缘设置的第一中空阴极腔；第二气体通道，其具有邻近扩散板元件的中心设置的第二中空阴极腔；以及第三气体通道，其具有邻近第二边缘设置的第三中空阴极腔，其中第一中空阴极腔、第二中空阴极腔和第三中空阴极腔具有不同的容积。
在另一实施方式中，公开了一种等离子体处理方法。该方法包括：流动处理气体经过扩散板，该扩散板具有贯穿其中设置的多个气体通道，并配置为使得邻近狭缝阀设置的第一气体通道不同于邻近扩散板的中心设置的第二气体通道以及邻近扩散板的边缘设置的第三气体通道；偏置扩散板；以及在气体通道内激发等离子体。
附图说明
因此为了更详细地理解本发明的以上所述特征，将实施方式对以上简要所述的本发明进行更具体描述，其中部分实施方式在附图中示出。然而，应该注意，附图中只示出了本发明典型的实施方式，因此不能认为是对本发明范围的限定，本发明可以允许其他等同的有效实施方式。
图1是根据本发明的一个实施方式的处理腔室的横截面示意图；
图2A是根据本发明的一个实施方式的与狭缝阀相关的扩散板的俯视图；
图2B是沿图2A的线A-A提取的横截面示意图；
图3A-3F是根据本发明的其他实施方式的具有中空阴极腔的气体通道的横截面示意图；
图4是根据本发明的另一实施方式的扩散板的横截面示意图。
为了便于理解，尽可能使用相同的附图标记表示图中共同的相同元件。预期在一个实施方式公开的元件可以有利地用在其他实施方式中，而不具体叙述。
具体实施方式
本发明主要包括一种用于PECVD腔室的扩散板。该扩散板包括多个中空阴极腔。最靠近处理腔室内的狭缝阀放置的扩散板的边缘可具有中空阴极腔的形状和/或尺寸，其被调整以补偿狭缝阀的邻近区域。通过调整最靠近狭缝阀的中空阴极腔，扩散板可允许整个处理腔室中的均匀等离子体分布，并因此允许PECVD工艺期间基板上的均匀薄膜厚度。
本发明将参照设计为处理大面积基板的PECVD系统示意性描述，诸如可从Santa Clara，CA，Applied Materials，Inc.(加利福尼亚州圣克拉拉的应用材料有限公司)的分公司AKT购买的PECVD系统。然而，可以理解本发明可在其他系统结构中应用，诸如用于处理小或圆形基板的系统结构。本发明还可在由其他制造商制造的处理系统中应用。
图1是根据本发明的一个实施方式的处理腔室100的横截面示意图。处理腔室100包括具有盖102和壁108的腔室主体。在至少一个壁108内，可存在一个或多个狭缝阀122以允许基板106插入处理空间116以及从处理空间116移除基板106。处理空间116可由狭缝阀122、腔室壁108、基板106和扩散板110限定。在一个实施方式中，扩散板110可通过功率源偏置。基板106可设置在底座104上，该底座104可上下移动以视需要提升和降低基板106。
气体可导入扩散板110和盖102之间称为充气室114的区域。由于从扩散板的上游侧118延伸穿到下游侧120的气体通道112的存在，因此气体可在充气室114内均匀分布。气体通道，如将在下文描述，可以设计为在充气室内形成基本均匀的气压。
图2A是根据本发明的一个实施方式与狭缝阀202相关的扩散板200的俯视示意图。图2B是沿图2A的线A-A提取的横截面示意图。扩散板200包括邻近充气室的上游侧204以及在处理期间邻近处理空间的下游侧206。多个气体通道208a-208c可存在于扩散板200内，其在上游侧204和下游侧206之间延伸。
每个气体通道208a-208c可包括顶部孔(top bore)210a-210c、节流孔(choke)212a-212c以及中空阴极腔214a-214c。顶部孔210a-210c可与扩散板200的上游侧204耦接，而中空阴极腔214a-214c可与扩散板200的下游侧206耦接。节流孔212a-212c可耦接在中空阴极腔214a-214c与顶部孔210a-210c之间。
气体通道208a-208c可通过从上游侧204在扩散板200中钻孔以及从下游侧206在扩散板200中钻另一孔而形成，从而两个孔耦接在一起。两个孔会合的位置形成扩散板200的节流孔212a-212b。
通过使流经扩散板的气体所经过的管道变窄，节流孔212a-212c用于允许充气室内分布的气体在扩散板200的整个上游侧204均匀分布。节流孔212a-212c的变窄的管道背撑(back up)该气体并由此在扩散板200的上游侧204展开气体，使得等量气体可流经每个气体通道208a-208c。在一个实施方式中，节流孔212a-212c可都具有相同的高度和宽度。在另一实施方式中，节流孔212a-212c可具有不同的高度和/或宽度。另外，节流孔212a-212c可与扩散板200的上游侧204相隔相同距离或不同距离。
气体通道208a-208c还包括中空阴极腔214a-214c。中空阴极腔214a-214c可以是锥形或柱状或两者组合。中空阴极腔214a-214c形成尺寸为允许在中空阴极腔214a-214c内激发等离子体。换句话说，可在扩散板200自身内而不是在处理空间内激发等离子体。通过在中空阴极腔214a-214c内激发等离子体，由于中空阴极腔214a-214c的形状和/或尺寸可影响腔室内等离子体的形状和/或强度，所以可控制等离子体的形状。
每个中空阴极腔214a-214c可具有不同的表面积或容积。另外，中空阴极腔214a-214c的扩口角度α1-α3可以相同和/或不同。扩口角度α1-α3是中空阴极腔214a-214c的壁从节流孔212a-212c延伸的角度。令人惊讶地发现狭缝阀202可以影响等离子体的均匀性并由此，影响基板上的沉积均匀性。
在气体通道208a-208c基板相同地穿过整个扩散板200的情况下，发现基板的中心区域可具有比基板的其余部分更多的沉积量。还发现邻近狭缝阀202的基板的区域可具有比基板的其余区域更多的沉积量，虽然邻近狭缝阀的基板上形成的沉积量可能小于基板的中心处发生的沉积量。
为了补偿不均匀沉积，可以调整中空阴极腔214a-214c的表面积和/或容积。将参照具有三个气体通道208a-208c的扩散板，但应当理解可以存在更多的气体通道208a-208c。对应基板中心的气体通道208b可具有较小的中空阴极腔214b表面积和/或容积。对应较少沉积的基板边缘的气体通道208c可包含中空阴极腔214c，与对应基板中心的气体通道208b相比，该中空阴极腔214c具有更大的表面积和/或容积。同样地，邻近狭缝阀202的气体通道208a可具有中空阴极腔214a，该中空阴极空腔214a与对应基板中心的中空阴极腔214b相比具有更大的表面积和/或容积，而与对应基板边缘的中空阴极腔214c相比具有更小的表面积和/或容积。虽然中空阴极腔214a-214c不同，但是节流孔212a-212c可以基本相同或不同。
还令人惊讶地发现在等离子体处理期间，大面积基板的角落与狭缝阀相比产生相似效果。因此，当使用具有基本相同的气体通道的扩散板时，靠近基板的角落发生的沉积量可能大于在基板的边缘处发生的沉积量，但小于靠近基板的中心发生的沉积量。为了补偿角落-中心-边缘沉积不均匀性，中空阴极腔214a-214c可以与以上关于狭缝阀-中心-边缘沉积不均匀性所讨论的配置基本相同来配置。应当理解扩散板可既具有狭缝阀补偿又具有角落补偿。图3A-3F是根据本发明的其他实施方式具有中空阴极腔的气体通道的横截面示意图。
图4是根据本发明的一个实施方式的扩散板400的横截面示意图。在上游表面408与下游表面410之间延伸的每个气体通道的顶部孔402和节流孔404基本相同。然而，整个扩散板400上的中空阴极腔406可以不同。与对应扩散板边缘的中空阴极腔相比，最靠近狭缝阀的中空阴极腔406可具有更小的表面积和/或容积。对应狭缝阀的中空阴极腔406的表面积和/或容积大于对应扩散板中心的中空阴极腔406的表面积和/或容积。由于下游表面起伏的形状使得中空阴极腔406可以不同。下游表面410可具有偏离下游表面410的中心并且与端部416略成倾斜的凹部414，以及靠近狭缝阀的另一部分412。下游表面410可通过在扩散板400中钻好顶部孔402和中空阴极腔406之后机械制造出扩散板400的下游侧410而形成。
通过在扩散板设计中补偿狭缝阀，均匀薄膜可沉积在基板上。
虽然前述针对本发明的实施方式，但在不偏离本发明的基本范围下可设计本发明的其他和进一步实施方式，并且本发明的范围由以下权利要求书限定。

Claims (18)

1.一种气体分配板组件，包括：
扩散板元件，其具有上游侧、下游侧、与处理腔室中的狭缝阀邻近设置的第一边缘、中心和第二边缘；以及
通过所述上游侧和下游侧之间的多个气体通道，该多个气体通道包括：
第一气体通道，其具有具有第一中空阴极腔容积的第一中空阴极腔，所述第一中空阴极腔邻近所述扩散板元件的所述第一边缘设置；
第二气体通道，其具有具有第二中空阴极腔容积的第二中空阴极腔，所述第二中空阴极腔邻近所述扩散板元件的所述中心设置；以及
第三气体通道，其具有具有第三中空阴极腔容积的第三中空阴极腔，所述第三中空阴极腔邻近所述第二边缘设置，其中所述第一中空阴极腔容积大于所述第二中空阴极腔容积并且小于所述第三中空阴极腔容积。
2.根据权利要求1所述的组件，其特征在于，每个气体通道具有：
节流孔，其具有足以促进基本均匀背压的长度和直径，该节流孔与中空阴极腔耦接。
3.根据权利要求2所述的组件，其特征在于，每个节流孔具有基本相同的长度和直径。
4.根据权利要求1所述的组件，其特征在于，所述扩散板元件具有具有第四中空阴极腔的至少一个角落部分，以及其中所述第四中空阴极腔的容积小于所述第三中空阴极腔容积。
5.根据权利要求1所述的组件，其特征在于，所述下游侧具有实质上凹形形状。
6.一种等离子体处理腔室，包括：
具有多个壁的腔室主体；
设置在所述多个壁的至少其中之一中的一个或多个狭缝阀；以及
扩散板，该扩散板包括：
扩散板元件，其具有上游侧、下游侧、与所述一个或多个狭缝阀的狭缝阀邻近设置的第一边缘、中心和第二边缘；以及
通过所述上游侧和下游侧之间的多个气体通道，该多个气体通道包括：
第一气体通道，其具有具有第一中空阴极腔容积的第一中空阴极腔，所述第一中空阴极腔邻近所述扩散板元件的第一边缘设置；
第二气体通道，其具有具有第二中空阴极腔容积的第二中空阴极腔，所述第二中空阴极腔邻近所述扩散板元件的中心设置；以及
第三气体通道，其具有具有第三中空阴极腔容积的第三中空阴极腔，所述第三中空阴极腔邻近所述第二边缘设置，其中所述第一中空阴极腔容积大于所述第二中空阴极腔容积并且小于所述第三中空阴极腔容积。
7.根据权利要求6所述的腔室，其特征在于，每个气体通道具有：
节流孔，其具有足以促进基本均匀背压的长度和直径，该节流孔与中空阴极腔耦接。
8.根据权利要求7所述的腔室，其特征在于，每个节流孔具有基本相同的长度和直径。
9.根据权利要求6所述的腔室，其特征在于，所述扩散板元件具有具有第四中空阴极腔的至少一个角落部分，并且其中该第四中空阴极腔的容积小于所述第三中空阴极腔容积。
10.根据权利要求6所述的腔室，其特征在于，所述下游侧具有实质上凹形的形状。
11.一种等离子体处理方法，包括：
通过扩散板流动处理气体，该扩散板具有贯穿其中设置的多个气体通道，并配置为使得邻近狭缝阀设置的第一气体通道具有大于邻近所述扩散板的中心设置的第二气体通道的第二中空阴极腔容积的第一中空阴极腔容积，并且所述第一中空阴极腔容积小于邻近所述扩散板的边缘设置的第三气体通道的第三中空阴极腔容积；
偏置所述扩散板；以及
在所述气体通道内激发等离子体。
12.根据权利要求11所述的方法，其特征在于，进一步包括：
等离子体处理与所述扩散板相对设置的基板，其中所述激发等离子体的步骤进一步包括：
在所述第一气体通道中激发等离子体；
在所述第二气体通道中激发等离子体；以及
在所述第三气体通道中激发等离子体。
13.根据权利要求12所述的方法，其特征在于，该方法包括等离子体增强化学气相沉积。
14.根据权利要求13所述的方法，其特征在于，所述等离子体处理包括沉积基本均匀厚度的层到所述基板上。
15.根据权利要求11所述的方法，其特征在于，进一步包括：
在整个所述扩散板上形成不对称的中空阴极等离子体梯度。
16.根据权利要求11所述的方法，其特征在于，所述扩散板具有实质上凹形的部分。
17.根据权利要求11所述的方法，其特征在于，每个气体通道具有：
节流孔，具有足以促进整个上游侧上的均匀气体分布的长度和直径；以及
与所述节流孔和所述下游侧耦接的中空阴极腔。
18.根据权利要求17所述的方法，其特征在于，所述节流孔基本相同。
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