ATE364897T1 - Spannungsungleichförmigkeits- kompensationsverfahren für einen hochfrequenz- plasmareaktor zur behandlung rechteckiger grossflächiger substrate - Google Patents
Spannungsungleichförmigkeits- kompensationsverfahren für einen hochfrequenz- plasmareaktor zur behandlung rechteckiger grossflächiger substrateInfo
- Publication number
- ATE364897T1 ATE364897T1 AT04761903T AT04761903T ATE364897T1 AT E364897 T1 ATE364897 T1 AT E364897T1 AT 04761903 T AT04761903 T AT 04761903T AT 04761903 T AT04761903 T AT 04761903T AT E364897 T1 ATE364897 T1 AT E364897T1
- Authority
- AT
- Austria
- Prior art keywords
- treatment
- compensation method
- plasma reactor
- frequency plasma
- area substrates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50177203P | 2003-09-10 | 2003-09-10 | |
US54395504P | 2004-02-12 | 2004-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE364897T1 true ATE364897T1 (de) | 2007-07-15 |
Family
ID=34278752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04761903T ATE364897T1 (de) | 2003-09-10 | 2004-09-08 | Spannungsungleichförmigkeits- kompensationsverfahren für einen hochfrequenz- plasmareaktor zur behandlung rechteckiger grossflächiger substrate |
Country Status (10)
Country | Link |
---|---|
US (3) | US7487740B2 (de) |
EP (1) | EP1665323B1 (de) |
JP (1) | JP4710020B2 (de) |
KR (1) | KR101202151B1 (de) |
CN (1) | CN1879189B (de) |
AT (1) | ATE364897T1 (de) |
DE (1) | DE602004007017T2 (de) |
ES (1) | ES2287755T3 (de) |
TW (1) | TWI346145B (de) |
WO (1) | WO2005024891A2 (de) |
Families Citing this family (35)
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US7319335B2 (en) * | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7785672B2 (en) * | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US20050233092A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Method of controlling the uniformity of PECVD-deposited thin films |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
US20070051388A1 (en) | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Apparatus and methods for using high frequency chokes in a substrate deposition apparatus |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
JP5029089B2 (ja) * | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置用の載置台及びプラズマ処理装置 |
US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
KR20100051738A (ko) | 2007-08-31 | 2010-05-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 광전지 생산 라인 |
CN101919022B (zh) * | 2007-10-01 | 2012-12-05 | 欧瑞康太阳能股份公司(特吕巴赫) | 活性膜的沉积 |
WO2009082763A2 (en) * | 2007-12-25 | 2009-07-02 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US8097082B2 (en) * | 2008-04-28 | 2012-01-17 | Applied Materials, Inc. | Nonplanar faceplate for a plasma processing chamber |
US8501528B2 (en) | 2008-10-01 | 2013-08-06 | Tel Solar Ag | Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates |
KR100903306B1 (ko) * | 2008-10-08 | 2009-06-16 | 주식회사 아이피에스 | 진공처리장치 |
TWI432100B (zh) * | 2009-11-25 | 2014-03-21 | Ind Tech Res Inst | 電漿產生裝置 |
CN102098864B (zh) * | 2009-12-09 | 2013-01-23 | 财团法人工业技术研究院 | 等离子体产生装置 |
JP5809396B2 (ja) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP5597456B2 (ja) | 2010-06-29 | 2014-10-01 | 東京エレクトロン株式会社 | 誘電体の厚さ設定方法、及び電極に設けられた誘電体を備える基板処理装置 |
JP5650479B2 (ja) * | 2010-09-27 | 2015-01-07 | 東京エレクトロン株式会社 | 電極及びプラズマ処理装置 |
WO2012166145A1 (en) * | 2011-06-02 | 2012-12-06 | Lawrence Livermore National Security, Llc | Charged particle focusing and deflection system utlizing deformed conducting electrodes |
US20130340941A1 (en) * | 2012-06-20 | 2013-12-26 | Tel Solar Ag | Lens offset |
CN102851653A (zh) * | 2012-09-10 | 2013-01-02 | 福建铂阳精工设备有限公司 | 大面积薄膜沉积设备 |
US9859088B2 (en) * | 2015-04-30 | 2018-01-02 | Lam Research Corporation | Inter-electrode gap variation methods for compensating deposition non-uniformity |
DE102015110562A1 (de) * | 2015-07-01 | 2017-01-05 | Von Ardenne Gmbh | Plasmaquelle, Prozessanordnung und Verfahren |
WO2017053771A1 (en) | 2015-09-25 | 2017-03-30 | Applied Materials, Inc. | Grooved backing plate for standing wave compensation |
EP3399545B1 (de) * | 2017-05-04 | 2021-09-29 | Meyer Burger (Germany) GmbH | Substratbehandlungssystem |
CN107937886A (zh) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | 化学气相沉积设备及成膜方法 |
US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
JP7308498B2 (ja) * | 2018-12-06 | 2023-07-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
JP2020092033A (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102607686B1 (ko) * | 2018-12-06 | 2023-11-30 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트, 플라스마 처리 장치 및 플라스마 처리 방법 |
Family Cites Families (24)
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US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
JPS6142864U (ja) * | 1984-07-31 | 1986-03-19 | 三洋電機株式会社 | 光起電力素子の製造装置 |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
JPH01226148A (ja) * | 1988-03-07 | 1989-09-08 | Mitsui Toatsu Chem Inc | 膜形成装置 |
DE9014857U1 (de) * | 1990-10-26 | 1992-02-20 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De | |
US5292394A (en) * | 1991-11-13 | 1994-03-08 | Leybold Aktiengesellschaft | Apparatus for large-area ionic etching |
CH686254A5 (de) * | 1992-07-27 | 1996-02-15 | Balzers Hochvakuum | Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung. |
US5938854A (en) * | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
JP3513206B2 (ja) * | 1994-03-22 | 2004-03-31 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
US5628869A (en) * | 1994-05-09 | 1997-05-13 | Lsi Logic Corporation | Plasma enhanced chemical vapor reactor with shaped electrodes |
JP3107971B2 (ja) * | 1994-05-17 | 2000-11-13 | 株式会社半導体エネルギー研究所 | 気相反応装置 |
US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
JP3220619B2 (ja) * | 1995-05-24 | 2001-10-22 | 松下電器産業株式会社 | ガス伝熱プラズマ処理装置 |
US6183565B1 (en) * | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
US5904487A (en) * | 1996-10-08 | 1999-05-18 | Advanced Micro Devices, Inc. | Electrode reshaping in a semiconductor etching device |
JP3595853B2 (ja) * | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | プラズマcvd成膜装置 |
WO2000070117A1 (en) * | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Low-temperature compatible wide-pressure-range plasma flow device |
JP4066292B2 (ja) | 1999-06-09 | 2008-03-26 | 株式会社小糸製作所 | 自動車用プラスチック部品の保護膜形成方法 |
US6228438B1 (en) * | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
JP2001288572A (ja) * | 2000-01-31 | 2001-10-19 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
JP2003019433A (ja) * | 2001-07-06 | 2003-01-21 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
DE10134513A1 (de) | 2001-07-16 | 2003-01-30 | Unaxis Balzers Ag | Hebe-und Stützvorichtung |
KR20050013734A (ko) * | 2003-07-29 | 2005-02-05 | 삼성전자주식회사 | 플라즈마 식각장치 |
US7449220B2 (en) * | 2004-04-30 | 2008-11-11 | Oc Oerlikon Blazers Ag | Method for manufacturing a plate-shaped workpiece |
-
2004
- 2004-09-08 WO PCT/CH2004/000563 patent/WO2005024891A2/en active IP Right Grant
- 2004-09-08 DE DE602004007017T patent/DE602004007017T2/de active Active
- 2004-09-08 US US10/935,779 patent/US7487740B2/en not_active Expired - Fee Related
- 2004-09-08 EP EP04761903A patent/EP1665323B1/de not_active Not-in-force
- 2004-09-08 AT AT04761903T patent/ATE364897T1/de not_active IP Right Cessation
- 2004-09-08 KR KR1020067005300A patent/KR101202151B1/ko active IP Right Grant
- 2004-09-08 ES ES04761903T patent/ES2287755T3/es active Active
- 2004-09-08 CN CN2004800328650A patent/CN1879189B/zh not_active Expired - Fee Related
- 2004-09-08 JP JP2006525597A patent/JP4710020B2/ja active Active
- 2004-09-09 TW TW093127228A patent/TWI346145B/zh not_active IP Right Cessation
-
2008
- 2008-12-31 US US12/346,917 patent/US7687117B2/en not_active Expired - Fee Related
-
2010
- 2010-02-19 US US12/708,757 patent/US8056504B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7687117B2 (en) | 2010-03-30 |
US20050066898A1 (en) | 2005-03-31 |
JP4710020B2 (ja) | 2011-06-29 |
US20090155489A1 (en) | 2009-06-18 |
KR101202151B1 (ko) | 2012-11-15 |
US7487740B2 (en) | 2009-02-10 |
US8056504B2 (en) | 2011-11-15 |
EP1665323A2 (de) | 2006-06-07 |
DE602004007017T2 (de) | 2008-02-07 |
ES2287755T3 (es) | 2007-12-16 |
WO2005024891A2 (en) | 2005-03-17 |
DE602004007017D1 (de) | 2007-07-26 |
CN1879189A (zh) | 2006-12-13 |
EP1665323B1 (de) | 2007-06-13 |
US20100139863A1 (en) | 2010-06-10 |
TW200523388A (en) | 2005-07-16 |
CN1879189B (zh) | 2011-01-19 |
JP2007505450A (ja) | 2007-03-08 |
KR20060080205A (ko) | 2006-07-07 |
TWI346145B (en) | 2011-08-01 |
WO2005024891A3 (en) | 2005-06-09 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |