CN1879189A - 用于处理大面积矩形基板的高频等离子体反应器的电压非均匀性补偿方法 - Google Patents
用于处理大面积矩形基板的高频等离子体反应器的电压非均匀性补偿方法 Download PDFInfo
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- CN1879189A CN1879189A CNA2004800328650A CN200480032865A CN1879189A CN 1879189 A CN1879189 A CN 1879189A CN A2004800328650 A CNA2004800328650 A CN A2004800328650A CN 200480032865 A CN200480032865 A CN 200480032865A CN 1879189 A CN1879189 A CN 1879189A
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- vacuum treatment
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- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 25
- 238000009489 vacuum treatment Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 18
- 230000005684 electric field Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50177203P | 2003-09-10 | 2003-09-10 | |
US60/501,772 | 2003-09-10 | ||
US54395504P | 2004-02-12 | 2004-02-12 | |
US60/543,955 | 2004-02-12 | ||
PCT/CH2004/000563 WO2005024891A2 (en) | 2003-09-10 | 2004-09-08 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1879189A true CN1879189A (zh) | 2006-12-13 |
CN1879189B CN1879189B (zh) | 2011-01-19 |
Family
ID=34278752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800328650A Expired - Fee Related CN1879189B (zh) | 2003-09-10 | 2004-09-08 | 用于处理大面积矩形基板的高频等离子体反应器的电压非均匀性补偿方法 |
Country Status (10)
Country | Link |
---|---|
US (3) | US7487740B2 (zh) |
EP (1) | EP1665323B1 (zh) |
JP (1) | JP4710020B2 (zh) |
KR (1) | KR101202151B1 (zh) |
CN (1) | CN1879189B (zh) |
AT (1) | ATE364897T1 (zh) |
DE (1) | DE602004007017T2 (zh) |
ES (1) | ES2287755T3 (zh) |
TW (1) | TWI346145B (zh) |
WO (1) | WO2005024891A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102851653A (zh) * | 2012-09-10 | 2013-01-02 | 福建铂阳精工设备有限公司 | 大面积薄膜沉积设备 |
CN102098864B (zh) * | 2009-12-09 | 2013-01-23 | 财团法人工业技术研究院 | 等离子体产生装置 |
CN102034678B (zh) * | 2008-10-08 | 2013-04-10 | 圆益Ips股份有限公司 | 真空处理装置 |
TWI455653B (zh) * | 2007-10-01 | 2014-10-01 | Tel Solar Ag | 用於處理基板之電漿反應器 |
CN107937886A (zh) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | 化学气相沉积设备及成膜方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7319335B2 (en) * | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US20050233092A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Method of controlling the uniformity of PECVD-deposited thin films |
US7785672B2 (en) * | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
US20070051388A1 (en) | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Apparatus and methods for using high frequency chokes in a substrate deposition apparatus |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
JP5029089B2 (ja) * | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置用の載置台及びプラズマ処理装置 |
US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
WO2009029902A1 (en) | 2007-08-31 | 2009-03-05 | Applied Materials, Inc. | Photovoltaic production line |
WO2009082763A2 (en) * | 2007-12-25 | 2009-07-02 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US8097082B2 (en) * | 2008-04-28 | 2012-01-17 | Applied Materials, Inc. | Nonplanar faceplate for a plasma processing chamber |
WO2010037716A1 (en) * | 2008-10-01 | 2010-04-08 | Oerlikon Solar Ip Ag, Truebbach | Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates |
TWI432100B (zh) * | 2009-11-25 | 2014-03-21 | Ind Tech Res Inst | 電漿產生裝置 |
JP5809396B2 (ja) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP5597456B2 (ja) | 2010-06-29 | 2014-10-01 | 東京エレクトロン株式会社 | 誘電体の厚さ設定方法、及び電極に設けられた誘電体を備える基板処理装置 |
JP5650479B2 (ja) * | 2010-09-27 | 2015-01-07 | 東京エレクトロン株式会社 | 電極及びプラズマ処理装置 |
WO2012166145A1 (en) * | 2011-06-02 | 2012-12-06 | Lawrence Livermore National Security, Llc | Charged particle focusing and deflection system utlizing deformed conducting electrodes |
US20130340941A1 (en) * | 2012-06-20 | 2013-12-26 | Tel Solar Ag | Lens offset |
US9859088B2 (en) * | 2015-04-30 | 2018-01-02 | Lam Research Corporation | Inter-electrode gap variation methods for compensating deposition non-uniformity |
DE102015110562A1 (de) * | 2015-07-01 | 2017-01-05 | Von Ardenne Gmbh | Plasmaquelle, Prozessanordnung und Verfahren |
US10373809B2 (en) | 2015-09-25 | 2019-08-06 | Applied Materials Inc. | Grooved backing plate for standing wave compensation |
EP3399545B1 (en) * | 2017-05-04 | 2021-09-29 | Meyer Burger (Germany) GmbH | Substrate treatment system |
US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
JP2020092033A (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102607686B1 (ko) * | 2018-12-06 | 2023-11-30 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트, 플라스마 처리 장치 및 플라스마 처리 방법 |
JP7308498B2 (ja) * | 2018-12-06 | 2023-07-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
Family Cites Families (24)
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US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
JPS6142864U (ja) * | 1984-07-31 | 1986-03-19 | 三洋電機株式会社 | 光起電力素子の製造装置 |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
JPH01226148A (ja) * | 1988-03-07 | 1989-09-08 | Mitsui Toatsu Chem Inc | 膜形成装置 |
DE9014857U1 (de) | 1990-10-26 | 1992-02-20 | Multi-Arc Oberflächentechnik GmbH, 5060 Bergisch Gladbach | Großflächige Kathodenanordnung mit gleichmäßigem Abbrandverhalten |
US5292394A (en) * | 1991-11-13 | 1994-03-08 | Leybold Aktiengesellschaft | Apparatus for large-area ionic etching |
CH686254A5 (de) * | 1992-07-27 | 1996-02-15 | Balzers Hochvakuum | Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung. |
US5938854A (en) * | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
JP3513206B2 (ja) * | 1994-03-22 | 2004-03-31 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
US5628869A (en) * | 1994-05-09 | 1997-05-13 | Lsi Logic Corporation | Plasma enhanced chemical vapor reactor with shaped electrodes |
JP3107971B2 (ja) * | 1994-05-17 | 2000-11-13 | 株式会社半導体エネルギー研究所 | 気相反応装置 |
US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
JP3220619B2 (ja) * | 1995-05-24 | 2001-10-22 | 松下電器産業株式会社 | ガス伝熱プラズマ処理装置 |
US6183565B1 (en) * | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
US5904487A (en) * | 1996-10-08 | 1999-05-18 | Advanced Micro Devices, Inc. | Electrode reshaping in a semiconductor etching device |
JP3595853B2 (ja) | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | プラズマcvd成膜装置 |
WO2000070117A1 (en) | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Low-temperature compatible wide-pressure-range plasma flow device |
JP4066292B2 (ja) * | 1999-06-09 | 2008-03-26 | 株式会社小糸製作所 | 自動車用プラスチック部品の保護膜形成方法 |
US6228438B1 (en) * | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
JP2001288572A (ja) * | 2000-01-31 | 2001-10-19 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
JP2003019433A (ja) * | 2001-07-06 | 2003-01-21 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
DE10134513A1 (de) | 2001-07-16 | 2003-01-30 | Unaxis Balzers Ag | Hebe-und Stützvorichtung |
KR20050013734A (ko) * | 2003-07-29 | 2005-02-05 | 삼성전자주식회사 | 플라즈마 식각장치 |
US7449220B2 (en) * | 2004-04-30 | 2008-11-11 | Oc Oerlikon Blazers Ag | Method for manufacturing a plate-shaped workpiece |
-
2004
- 2004-09-08 CN CN2004800328650A patent/CN1879189B/zh not_active Expired - Fee Related
- 2004-09-08 ES ES04761903T patent/ES2287755T3/es active Active
- 2004-09-08 JP JP2006525597A patent/JP4710020B2/ja active Active
- 2004-09-08 US US10/935,779 patent/US7487740B2/en not_active Expired - Fee Related
- 2004-09-08 EP EP04761903A patent/EP1665323B1/en not_active Not-in-force
- 2004-09-08 WO PCT/CH2004/000563 patent/WO2005024891A2/en active IP Right Grant
- 2004-09-08 AT AT04761903T patent/ATE364897T1/de not_active IP Right Cessation
- 2004-09-08 DE DE602004007017T patent/DE602004007017T2/de active Active
- 2004-09-08 KR KR1020067005300A patent/KR101202151B1/ko active IP Right Grant
- 2004-09-09 TW TW093127228A patent/TWI346145B/zh not_active IP Right Cessation
-
2008
- 2008-12-31 US US12/346,917 patent/US7687117B2/en not_active Expired - Fee Related
-
2010
- 2010-02-19 US US12/708,757 patent/US8056504B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455653B (zh) * | 2007-10-01 | 2014-10-01 | Tel Solar Ag | 用於處理基板之電漿反應器 |
CN102034678B (zh) * | 2008-10-08 | 2013-04-10 | 圆益Ips股份有限公司 | 真空处理装置 |
CN102098864B (zh) * | 2009-12-09 | 2013-01-23 | 财团法人工业技术研究院 | 等离子体产生装置 |
CN102851653A (zh) * | 2012-09-10 | 2013-01-02 | 福建铂阳精工设备有限公司 | 大面积薄膜沉积设备 |
CN107937886A (zh) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | 化学气相沉积设备及成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
ES2287755T3 (es) | 2007-12-16 |
CN1879189B (zh) | 2011-01-19 |
TW200523388A (en) | 2005-07-16 |
TWI346145B (en) | 2011-08-01 |
WO2005024891A2 (en) | 2005-03-17 |
EP1665323A2 (en) | 2006-06-07 |
JP2007505450A (ja) | 2007-03-08 |
US8056504B2 (en) | 2011-11-15 |
EP1665323B1 (en) | 2007-06-13 |
US7487740B2 (en) | 2009-02-10 |
US20090155489A1 (en) | 2009-06-18 |
DE602004007017D1 (de) | 2007-07-26 |
US7687117B2 (en) | 2010-03-30 |
KR20060080205A (ko) | 2006-07-07 |
ATE364897T1 (de) | 2007-07-15 |
US20100139863A1 (en) | 2010-06-10 |
KR101202151B1 (ko) | 2012-11-15 |
US20050066898A1 (en) | 2005-03-31 |
DE602004007017T2 (de) | 2008-02-07 |
WO2005024891A3 (en) | 2005-06-09 |
JP4710020B2 (ja) | 2011-06-29 |
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Owner name: OERLIKON SUN IP STOCK CO., LTD. (TELVBAHE) Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20091204 |
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