CN101197372B - 半导体器件及树脂密封型半导体器件 - Google Patents

半导体器件及树脂密封型半导体器件 Download PDF

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CN101197372B
CN101197372B CN2007101945770A CN200710194577A CN101197372B CN 101197372 B CN101197372 B CN 101197372B CN 2007101945770 A CN2007101945770 A CN 2007101945770A CN 200710194577 A CN200710194577 A CN 200710194577A CN 101197372 B CN101197372 B CN 101197372B
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insulating barrier
forms
wiring
semiconductor device
film
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CN101197372A (zh
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田中顺
大谷美晴
尾形洁
铃木康道
堀田胜彦
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Renesas Electronics Corp
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Hitachi Ltd
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/086—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving buried masks
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    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
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    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
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    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
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    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
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    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2007101945770A 2002-04-12 2003-04-12 半导体器件及树脂密封型半导体器件 Expired - Lifetime CN101197372B (zh)

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US (5) US6838771B2 (enExample)
JP (1) JP2010045406A (enExample)
KR (2) KR100556641B1 (enExample)
CN (2) CN101197372B (enExample)
TW (2) TWI300971B (enExample)

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US7372154B2 (en) 2008-05-13
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US7247525B2 (en) 2007-07-24
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