CN101132011A - 阵列基板及其制造方法和具有阵列基板的显示器件 - Google Patents

阵列基板及其制造方法和具有阵列基板的显示器件 Download PDF

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Publication number
CN101132011A
CN101132011A CNA2007101526391A CN200710152639A CN101132011A CN 101132011 A CN101132011 A CN 101132011A CN A2007101526391 A CNA2007101526391 A CN A2007101526391A CN 200710152639 A CN200710152639 A CN 200710152639A CN 101132011 A CN101132011 A CN 101132011A
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China
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layer
gate
electrode
pattern
copper
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Chinese (zh)
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李制勋
金度贤
李殷国
郑敞午
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
CNA2007101526391A 2006-07-20 2007-07-20 阵列基板及其制造方法和具有阵列基板的显示器件 Pending CN101132011A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR67979/06 2006-07-20
KR1020060067979A KR20080008562A (ko) 2006-07-20 2006-07-20 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치

Publications (1)

Publication Number Publication Date
CN101132011A true CN101132011A (zh) 2008-02-27

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Country Link
US (3) US7511300B2 (https=)
EP (1) EP1881366B1 (https=)
JP (1) JP2008028395A (https=)
KR (1) KR20080008562A (https=)
CN (1) CN101132011A (https=)
DE (1) DE602007009162D1 (https=)

Cited By (17)

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CN102194742A (zh) * 2010-03-10 2011-09-21 三星移动显示器株式会社 液晶显示器的阵列基板及其制造方法
CN102213877A (zh) * 2010-04-06 2011-10-12 北京京东方光电科技有限公司 阵列基板、液晶面板及其制造方法
CN103378164A (zh) * 2012-04-23 2013-10-30 乐金显示有限公司 阵列基板及其制造方法
CN103489902A (zh) * 2013-09-30 2014-01-01 京东方科技集团股份有限公司 一种电极及其制作方法、阵列基板及显示装置
CN103869524A (zh) * 2012-12-13 2014-06-18 三星显示有限公司 液晶显示器及其制造方法
CN103915452A (zh) * 2014-03-28 2014-07-09 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN104704638A (zh) * 2012-10-17 2015-06-10 株式会社半导体能源研究所 半导体器件
CN107065237A (zh) * 2016-12-30 2017-08-18 惠科股份有限公司 一种显示面板制程
CN108807550A (zh) * 2018-05-02 2018-11-13 友达光电股份有限公司 半导体装置及其制造方法
TWI651574B (zh) * 2015-01-12 2019-02-21 友達光電股份有限公司 顯示面板及其製造方法
CN111403336A (zh) * 2020-03-31 2020-07-10 成都中电熊猫显示科技有限公司 阵列基板、显示面板以及阵列基板的制作方法
WO2021022681A1 (zh) * 2019-08-08 2021-02-11 Tcl华星光电技术有限公司 薄膜晶体管阵列基板
TWI719785B (zh) * 2019-12-27 2021-02-21 友達光電股份有限公司 顯示器
CN112874655A (zh) * 2021-02-04 2021-06-01 北京理工大学 可控角度的机器人被动足部及应用该被动足的机器人
CN113219749A (zh) * 2016-02-17 2021-08-06 群创光电股份有限公司 主动元件阵列基板以及显示面板
TWI740585B (zh) * 2019-08-20 2021-09-21 友達光電股份有限公司 畫素陣列基板
CN114141869A (zh) * 2021-11-30 2022-03-04 北海惠科光电技术有限公司 薄膜晶体管及其制备方法、阵列基板

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JP4855315B2 (ja) * 2007-03-30 2012-01-18 株式会社アルバック 薄膜トランジスタ製造方法、液晶表示装置製造方法
KR20090080790A (ko) * 2008-01-22 2009-07-27 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 제조하는 방법
KR101449460B1 (ko) * 2008-05-23 2014-10-13 주성엔지니어링(주) 박막 트랜지스터 어레이 기판 및 이의 제조 방법
KR101253497B1 (ko) * 2008-06-02 2013-04-11 엘지디스플레이 주식회사 액정표시장치용 어레이 기판의 제조방법
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
CN103400857B (zh) 2009-11-27 2016-12-28 株式会社半导体能源研究所 半导体装置和及其制造方法
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KR101113354B1 (ko) * 2010-04-16 2012-02-29 삼성모바일디스플레이주식회사 표시 장치 및 그 제조방법
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KR101832361B1 (ko) * 2011-01-19 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20130021607A (ko) * 2011-08-23 2013-03-06 삼성디스플레이 주식회사 저저항 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
KR101774491B1 (ko) 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
JP5912046B2 (ja) * 2012-01-26 2016-04-27 株式会社Ｓｈカッパープロダクツ 薄膜トランジスタ、その製造方法および該薄膜トランジスタを用いた表示装置
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CN102629592A (zh) * 2012-03-23 2012-08-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
JP6004319B2 (ja) * 2012-04-06 2016-10-05 住友電工デバイス・イノベーション株式会社 半導体装置および半導体装置の製造方法
CN102664194B (zh) * 2012-04-10 2015-01-07 深超光电（深圳）有限公司 薄膜晶体管
DE112013002407B4 (de) * 2012-05-10 2024-05-08 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
CN102738007B (zh) * 2012-07-02 2014-09-03 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
KR102004398B1 (ko) * 2012-07-24 2019-07-29 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP2014032999A (ja) * 2012-08-01 2014-02-20 Panasonic Liquid Crystal Display Co Ltd 薄膜トランジスタ及びその製造方法
KR20140021096A (ko) * 2012-08-07 2014-02-20 한국전자통신연구원 도핑 베리어를 가지는 자기 정렬 박막 트랜지스터 및 그 제조 방법
WO2014067463A1 (zh) * 2012-11-02 2014-05-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置和阻挡层
KR102028505B1 (ko) 2012-11-19 2019-10-04 엘지디스플레이 주식회사 유기발광 표시패널 및 이의 제조방법
CN103000694B (zh) * 2012-12-13 2015-08-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
KR102090460B1 (ko) * 2012-12-31 2020-03-18 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조 방법
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KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102230619B1 (ko) 2014-07-25 2021-03-24 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20160014833A (ko) * 2014-07-29 2016-02-12 삼성디스플레이 주식회사 금속 배선의 제조 방법 및 박막트랜지스터 기판 제조 방법
CN104409516A (zh) * 2014-11-28 2015-03-11 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置
JP2016181332A (ja) 2015-03-23 2016-10-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置および表示装置の製造方法
CN104730782B (zh) * 2015-04-01 2018-03-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置
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KR102494732B1 (ko) 2015-10-16 2023-02-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN108292684B (zh) * 2015-11-20 2022-06-21 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
KR102617444B1 (ko) * 2015-12-30 2023-12-21 엘지디스플레이 주식회사 박막 트랜지스터 기판
CN106653772B (zh) * 2016-12-30 2019-10-01 惠科股份有限公司 一种显示面板及制程
CN107290913A (zh) * 2017-07-31 2017-10-24 武汉华星光电技术有限公司 显示面板、阵列基板及其形成方法
KR102263122B1 (ko) 2017-10-19 2021-06-09 삼성디스플레이 주식회사 트랜지스터 표시판
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