WO2015143796A1 - 阵列基板、其制作方法及显示装置 - Google Patents

阵列基板、其制作方法及显示装置 Download PDF

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Publication number
WO2015143796A1
WO2015143796A1 PCT/CN2014/082023 CN2014082023W WO2015143796A1 WO 2015143796 A1 WO2015143796 A1 WO 2015143796A1 CN 2014082023 W CN2014082023 W CN 2014082023W WO 2015143796 A1 WO2015143796 A1 WO 2015143796A1
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WIPO (PCT)
Prior art keywords
substrate
shape
pole
weng
drain
Prior art date
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PCT/CN2014/082023
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English (en)
French (fr)
Inventor
崔承镇
金熙哲
宋泳锡
刘圣烈
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP14861185.8A priority Critical patent/EP3128553B1/en
Priority to US14/436,066 priority patent/US10338438B2/en
Publication of WO2015143796A1 publication Critical patent/WO2015143796A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • Dew How to: urgency and data line de-etching ⁇ : Corrosion, is a person in this field j ⁇ need: a light pull problem.
  • the present invention provides a seed array 3 ⁇ 4 base care, its production Fang Weng and: display: device, JD solution fiber has 3 ⁇ 4 surgery stored ⁇ 3 ⁇ 4 pole and fiber according to the age of the enemies De H's question.
  • Sen fans :: source, fiber and data line #: surface * Weng to the fans : narration, leaking and data lines continued. Over the view ⁇ : ⁇
  • Embodiment The provided upper substrate:, by; the source set in the same layer,: leakage.
  • the connected part is connected with the above-mentioned: pixel electric dynasty and the same as the setting.
  • the source, the drain, and the number of wireless electrodes are reduced.
  • the source, the drain, and the material of the data line are copper. :, the oxygen film ⁇ material oxygen & copper.
  • Shaped Wei has a beautiful fiber: Extreme, : Leaking boat and: Data a few: Weng Wei-shaped Weng lining? Fibrillation 'fire-fighting treatment, the surface of the 3 ⁇ 41 pole, the missing view and the data line ⁇ the oxygen thinning;
  • the shape of Weiwei has a very spectacular electrode: 1 : The shape of the base substrate is: blunt and thin, Lu etch. The etch process is in place: the oxide of the drain is thin and the faint: blunt: layer Thin Xinjiang shape : : into the second pass.
  • Weng fans in Wengji after the fire of the Weng fans are on the board: Shape: Wei pixel : Electrode 2.5: Part: Picture : , Specific ft : :
  • Kei as shown in ⁇ 2, including: 1 * - on the lining base: the same on the board 1: the layer resets the source of the source: the drain 2 and the few, and: at the source.
  • the pole, the drain 2 and the violent data are on the shame : Pixel electrode 3; Move: 3 ⁇ 4 bracket: Connect: Joint 4;: In sample., Drain 2 : Table crane easy to pair: Source: narrow, fiber fox 2 and joyful line: Over-mask: After processing Shape. into 3 ⁇ 4 3 ⁇ 4 film: 3 ⁇ 4
  • the four-way 3 ⁇ 4 is located on the drain 2: and enjoys the gas: the film: 5: Record : the first 3 ⁇ 4: A drain: 2 pixels electric Wei 3 electric morning.
  • M 5 It is the opposite shape: salty has a fine 43 ⁇ 4 2: and Wei mill line. : Special 3 ⁇ 4 Wei Ke 3 ⁇ 4 I 3 ⁇ 4 3 ⁇ 4i ⁇ : ⁇ S Weiwei, 3 ⁇ 4#, need.
  • the sale of the example provides the upper tomb of the tomb board Kang actually produced : over : the process f will not increase: the mask times fc
  • the present invention provides an arrogant Ji fan to make a J law furnace at 3 ⁇ 4 : at 20: base. Board : Shang Yaowei wins electricity: the pole and the stability section: Yao » True 1 3 ⁇ 4 layer of bound shape: electricity: turtle connection scare pixel electricity: general Lianzheng Zheng: the seam joints € 3 ⁇ 4t first 3 ⁇ 4t 3 ⁇ 4 and: leak: extremely electric connection: connection.
  • ⁇ 25 Mu The violent rough into the Weng Youhuo: ⁇ , with : can be " in ⁇ 3 ⁇ 4 conditions ⁇ : ⁇ : Source:: pole, leak: polar data every WWM: Tweed: board Sorrowful and familiar treatment, the temperature of the Gach is shown in 1 3 ⁇ 4 to 200 r: the clearing: the length of the Weng 3 ⁇ 4 is controlled at lOmin 3 ⁇ 4 lh.

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  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

一种阵列基板、其制作方法及显示装置，由于在同层设置的源极、漏极（2）和数据线的表面具有对源极、漏极（2）和数据线经过退火处理后形成的氧化物薄膜（5），这样，在源极、漏极（2）和数据线上方采用构图工艺形成像素电极（3）的图形的过程中，氧化物薄膜（5）可以保护下方的源极和数据线在刻蚀形成像素电极（3）的图形时不被刻蚀剂所腐蚀，可以避免影响显示面板的显示品质；并且，连接部（4）通过位于漏极（2）上方且贯穿氧化物薄膜（5）的第一过孔（A）将漏极（2）与像素电极（3）电性连接，从而可以保证显示面板的正常显示功能。

Description

Figure imgf000003_0001
从 影响鹿 显示善傅:显，品廣。
露 ：， 如何:通急維极和數据线德刻蚀懇:腐蚀, 是本领域拔术人 j 亟需:輕决的拔术 题。
：5 删内容:
有鉴于：此， 本发明;实施 :例提供了 种阵 ¾基抚、 其制作方翁及：显 示:装置， JD 解决纖有 ¾术申存^的 ¾极和纖据歲被刻摧剂腐德的 H 题。
腾 j &， 本處明实施剩教供了一辨阵列碁板，: 包措： 衬底基板， 位 于所: ¾ 底基板上同羞设直 難极、 ：漏:极 翻椐线 :及：在所述纖极、 翁极:和:数据幾所在膜義上 的 拳 :电槐; ^ 逶接部;：
森 迷::源极、 纖极和数据线 # :表面 *翁对所迷 :滅叙、 漏崴和数据 线续.过观^处:珑 形威趙氧 嚇薄膜 j
：第一 ， 所 第一逸孔崔 ^翁: ¾¾纖上方且貫：穿所 氧化翁
15 膜: if斑.:连插部直渡醉迷笫一过 ¾鲁珠迷 ϋ极与稀迷像' t龟极电樣连 楼:。
本发明：实施例:提供的上迷阵 基板:， 由;于在同层设置的源极、： 漏.
¾ ^：德撫线缝: ¾翁真有对睡:：极:、 满极和数 4¾翁:兹 处纖后 咸的. 氣化 薄膜:， 逸眷.， 在源板 満极 救据线上方采糟构 I工艺:形 像
20： #电械姆：围耀的 i Ψ， inft:薄朦 保护 :卞：矛灣錄撤:和数裤禽在 刻德形：處離素电极的围難:时不複剥翁剂所腐饯：, 可 羞免影 :显 翁 的显示品:覆； 并且， 连德部通迚位 ψ溝极上方且贯穿氧化麟舞膜的: 第一过孔：楼駕暴与 素电极电性连接，： ：从^可 ¾保¾嚴 Φ：面板的正常 墓 徐能。
■25 *体地: 在本发明 籍销屬翁的上述阵 暴板应用予高级超維海 开关型漩晶嚴 Φ暴时， 还急括： 在所迷像素电极上方恭次层叠暴 ¾的 化 和焱身电：极， 所纖钝 层延伸到辨 ·迷纏极：的 方；
所迷.连翁部与所述公 电振阔暴傲置 JL相直绝緣 ¾ JL所 · 第
孔風賁穿所 化层；
30 麻迷像食电辆与:所迷纖载 漏摘 Φ敷据：线 )：图：形 :互不重歷:；:
莱二睡 , 所述第二 孔拉于辨 像素电极上方且贯 f M述 化 M , 脾迷遴接部:通过 :第二 ：礼与 :所迷像素电极电性逮暴 或者：，. 具体地， 在本发明 施倒廉餐钓.上迷:阵到棊板应用于高级
：超維场开关 液晶显示 时， 还包:括:: 暴于所逑像素电极与戲述满极、 漏极 魏据线所在膜廣之间 :的公#电极:， Μ及位: 所迷雷素电极 m ：述公共电愈之:间的翁化慕， 胖迷德 层延伸到辨愈漏极 上方；
：5 翁迷^ :电辆 爾 ¾翁¾翁¾ 互^重: :叠；
所逑连接部与所述:像素电德同慕设羼.， 称迷第 貧穿所迷 崖。
较佳逸:， 了减 φ源极、 漏极和数無线的电 Τ， 在本发明实翁倒 提供的上迷:阵列基板中,： 所述源极、 漏极和数据线的材料 铜:， 所述 氧 物薄膜 }材料 氧 &铜。
¾一步 ，: 在本发明:秦施劇:提供灣上迷陣列基板中， 包無;
位于 #: 源擅:和漏极下；方且為 途纖献和儀极电德迹接 ½有纖 与所 层相 ^翁缘且相对 置翁樣纖.„
is 较佳地， 为 T 4k 咸的氧化物寿膜驚可 揚护滅极和數据歲不被 刻 ΜΜ铖， L能俸证纖极 雜板之狗 :'载 : 蕭餘:¾， 在本 ¾ 实籍例 ¾供的:上迷阵树基板中：， 迷 :氧化物薄膜的厚處为： H3nm 至 IQQimio
本发明实施剩 提供 —种阵到基載翁制作方翁 包括:： 20： 釆用一 輕工 ¾在翁 ¾美根上穆成滅观、 纖:极和敎据幾的图 ；;
形威有激迷纖：极、 ：漏艇和:数据幾：翁闺形翁衬愈基？ 纖衧'逼火处 理， 所途 ¾1极、 漏视和数据线的 的表面■成氧 物薄髓;；
在:经 迷退: 魏逮后的翁禽基板上形處樣素电极和.连接舞的闺 形； 其中，
■25 ：所親连載部遷 位于所 漏极上方' jLy穿所想氧化脉薄騰的:第一 过:孔将餘迷漏极与:所迷像素 极电義
本處明 施刺提翁 上遷阵:¾暴親翁督作方澳， ：由于 用:一 翁 衝工艺:在衬底基板上每成源粗、 纖稞.和 聽线 图 后， 该禪麻 基板：进狞 火处纖.，： 纖极、 漏:极和嶽据幾的掘條€i表箭鶴處氧化 30 薄镞， 錫后形威像素电极和连接部的:图 ， 这样， 氧 魏薄應可 保 护卞^萄源粗和数据线在翁蚀彩歲像. :电:极的图;形 蚀:剖::脉腐 ¾:, ¾兔:彭喻 :复泰面:板崎康杀品:质;： 并且， ^成餘连無部 ¾建位于漏 极:上 且：貫:穿拿¾：物薄膜.:錄 W '过孔将禱极与像素 %极电' 途接.， w、 以保扭 亲面 ¾：的:暴眷显樣功能.。
具体地 在恭发嚼 施例翁供崎上迷制:作方法 , 胖迷在翁暴基 板上 威像:素电极 § 1形 :， 具体包括：
：5 在 S迷衬^基板上 威与對選雜极.、 '纖极 藤线的闺 ¾互^重 叠的攀素电极的 形；
處本发观实施销 :撤 的:上 舊作 #：法掘獰翁阵 基板 用乎 親 超维:场 型液晶.褒 屏时， 所¾方法:, ：
在:影成有所 ϋ像素电板的闺形的衬底碁板上形:藏翻化层薄膜， 通 t m m工艺:在位.乎寐迷麻极上: 的所 ¾氧 物薄:膜:和所迷钝化层薄膜 t 威第一¾孔:； 在形 胖述第一 ¾ ：的 m时，： 在 于所迷像眚 上 ： . 述滅化屋薄膜申形成駕 过孔:；
在辨：迷 牝层鋒图 戚翻 ^绝霧销公 电板:和逄翁部縣图 穆：:: 所逸 接部逃：过翁迷:第一 ¾ 餘逃漏极电：性连楼 鐵魏所逸第：
15 ： 遗孔与 像棄：电极 '电 '¾连接:。
或者, 善体地 在:本樣 卖翁 機锬 作方 制得的阵列 基粗 用于高级錄维场开关型液晶翼示屏时， 所述：在衬底基板上 ¾ 爆愈电 连凝部 s¾麵形: :之翁 . m
在所迷村底基板上形成与 '辨 ¾漏 翁图: 不重叠 公 :电极的
20： 图,:；：
:形威有激迷 甚电极的: 1 ：的 底基板上形:威钝 薄滅， 盧 刻.蚀工艺在位：于所迷漏极 所通氧化翁薄騰和所:迷钝:化层薄疆 中形 :：成第 ^过孔。
異体.地， 翁迷在经过翁迷滅火处澳后的翁 基.板上:形:威像素 :电极2.5: 部的:图 :， 具体 ft括 :：
在所述钝 街围:形:上形 -电牲连接 ¾樣素 极:和连接部的围: 形； 辨迷壤翁部:邇过所纖第一¾：孔与:辨¾纏极电 ¾慮接.。
较佳地：，： 錄了保 形 的 ¾:¾：物薄滅的易處迻中， 在本发明'实施 ：例提供¾上述制作^法申：， 對 威有辭： 纖极、 ¾：和数 it线: : S 30 的衬底基翁进行 磨， 具体 辆：
在 ίι气鲁件 ：, 对形 ii有所 .源：艇、 漏撤和数择线的图 m的衬轰 基板趣行加慕樣理， 加¾温度为 : 15Q 至: 200 ^ 扭热翁长为 : Ιθϋώι至 。
进一歩地 , 在本发明实：施:倒提供的上迷剝 ^方法中， .r 在着處: 基板 JL離戴爾极、 纖 ft和教据幾的 前， 还餐雜:
在翁底基板上乘滅：一誦 8 M巍栅极^栅幾的圏 ；
在形威有静逸栅极和 #线翁 ¾ ■衬底基板 . 形處柵 :绝緣属 :;： 在所迷栅绝缘奚上.待所迷栅极 ¾a域形咸 源层的 ®形:;
M 有静迷有 m羞的 s 3 a衬底塞板上 處刻 ¾阻難基的菌 ■。■
本氣 施观 提供了一 显示歉置 , ¾齡本发明实施倒:提供的 迷唯列:基板 附菌:说明
：图 la-图 If 1] ^现有 ¾求中:阵列基板翁制律 ^法申备爹骤 ， 處铺^ 构条意辑；
露 为 明:实施例提供的阵:列：基粗应身于 TN¾液晶 示屏 E 脅 续拘^意图；
¾ 和國 3¾ 分别为一种 发明裟翁例暴供的阵列基板處.膽于 AD.S:凝谈晶 示: ::：的錄 图；
：： 嚷: 倒：提供的阵 f 'i基板翁制传 w ¾程图 瑪： Sa-:¾: 5e;骨剷^本 ；实 一 碁 1的制 方法中各參骤 所形成制^:的俯¾图；
¾ 6a和萄 6 分劍 j M和潤 S J2:制品的侧 興；:
：围 7a-图： 7:c分剁为本复明：实 申阵判:基板翁制作方法申各參骤;: 纖威制品的:俯视:图；
¾： 和闺: :8b分刺为：图 .和:图 7 b对应制品的餐 ¾围：。 实 :施 ϋ
下養结合離图，： 珠恭发明实 铺提供的阵 基教、 其制作方法及 康示装置 ¾具体实魏 餅地说明。
：附围中备膜翁的形状 厚度求 映 基板的真雜 倒， :的只 Μ Μ本发明:内:拿
本发明 ¾施衡親供翁一 阵判:基挺， 如闺 2 所示， 括： 食塞 1 * -于衬處基：板 1上同:层複置嚇源极：、 漏极 2和數無幾 , 以及:在源. 极、漏极 2和暴据戟所在嫫羞上:.设置通像素电极 3; 遷: ¾括： 连:接部 4;： 在 樣.、 漏极 2: 据线的表鶴易 对:源：狭、 纖狐 2和歡据线经: 过遮: 处理后形.成^ ¾ ¾ 薄膜 :¾
：5 连養部 4通¾位于漏极 2上： 且赏穿氣 :物薄膜 :5:錄:第一 ¾ : A 漏极: 2 像素电魏 3电晨 籍。
本发賴实施剩提供纏上.蜜難 基:板 由予在同慕凝置的源 ¾、 极 2 数据线的表翁異有 葡极、 漏¾ 2和数据线錄 it.退 处：逮后形 ：翁的:：氧 物:薄膜 5， ¾#, 在源:极、漏 :tt :2和数据:线上:方 用 工艺 成像素电极 3购鶴形條过程中, # &:物薄膜 5可 保护下方的：源极 和靠据线暴 ¾蚀 .威像素电极 3 的闺:形 不被刻蚀孤所適 可以灣 1影 显 面献 显 品质;： #且， 连凝鄱 4感过位 .漏¾ 2上方且 贡穿氧化物:薄應 5.練嘗一 将：難极 2与像:素电极 3 性 接， *
Γ¾可'!■¾樣 盖 板的： j 常 „：
15 具 地,. 由于在滅叙、 ：漏极 1 数据载的表 所其有:
M 5 :是对形:咸有 极 爾 4¾ 2：和魏磨线. :特¾威基 ¾ I ¾ ¾i^:^ S 形威的， ¾#, 需.要单独采用摘图工 ¾制:作 fc ¾fc薄：膜 5， 粗对于现 技术， 本复.明卖義例提供 上迷陴列墓板康实际制作 :过:程 f不会增 加：掩模次 fc
20： 在¾体 施 : ， 形成有源极、 具极 2和養 线脅教 基板 1进 衧退火:处理, 一般是在氧气条件下纖 对形威.有 m极 漏板 %和数疆 线的衡形¾衬處碁：歡: 1逸行加¾ 鎖職翁，: #加熟:温度難:網在. Oti至. ;20:0 3 ¾：1 if , 将加热餘长控制袁 lOmln J. lh范:围内。
较佳地 身了使想氣的::氧 Λ物:薄膜 5 ¾ 以槔护 教和数擁禽不
■25 魏刻：蚀縦廣银， 叉錄錄钱:源:极 義載 2之间:的载; 子 常 :传翁 ί 在本 发噴实施销提供的上遣阵 塞板中， 将 化物薄膜 5 厚爰控親在 lOnm j- 10Onm：范睛禽。：
狭佳地:， 了滅 源极、 翁抵： 2 ¾獰:线的 :阻， 一翁釆用袭属: 翻 :礙戒菌极、 漏极 2和数据线湾图 ::形, : 鲦: 進火 理^， 在纖极、 漏 30 极 2 數据幾的图，翁表翁形威:的氧 ¾物:薄膜 5为氧 铜薄媒。：
M , 在具体棄施 也可 釆用 他¾属形成涯:极、 漏极 2和 MM 舆雍：,. 在:¾不截
Figure imgf000009_0001
Figure imgf000010_0001
威与翁极、 漏极^数据线 ¾ 不袁長 像素电极的 并 I 本发嚷实旅例提供:的上迷制作方翁制得的：阵到基板處用于 ADS镇液 著晴， 本发 ¾ 施例揭供的上迷剩:作： t翁还" ήΓ 包精： 首先,： 在形藏有像:素电植的爾 的樣底基板上形 钝 晨薄膜：，. ：；5 '通 i 刻妹工 在很于漏魏上案的:氧 薄:嫉和錄化层傳纖中形：威華一
L: 在 成第一过 ¾的戰时， 在位于像素电极上方翁她 层薄膜申 處幫 it孔：;.
, 在德 萄图權:上形成相互翁緣 会甚电极和遴接部的:图 ®； 逄椟部:邇过蒙一过孔易:漏极电性连接， 通过擎 .过 ¾ 像素电叙 ：电様连接。
或 , 在本发明讓施例: :提狭的 堪翁作方法制得的阵对基柢应莉 于 ) 晶:显 屏时， 本畫 W:实:施例提 #的上迷:制 方逄中 # #聰 S403在衬底基板上：形處像素％¾ ^遴凝部 簡 :之前 , 可
：, ：在:衬處霧板上 ,成与漏滅 M 1 雷叠的 :共：电极 ：国
15 暴；
, 在形 有公袭 ¾.极 ： . #衬淼基板 J:形 铑：化羞：薄朦, 通號刻：蚀工 在锻于漏极上方的氧化物薄滅和徒化 薄職 形戒第一 異体地：, 本发明：实施例提供傲 Ji迷制作 J法申爐 在 ¾:處 20： 基.板 :上耀威奪 电:极和逸穩部的围:耀 » 真 1 括 在¾ 层的縛 上形:處电:龜连接嚇像素电：概 连楼鄭：的爾 缝接部€ ¾t第一 ¾t ¾ 与:漏:极电性连:接。
较權地：， 为了做條:形成的氧 翁薄膜餘專度途中， 本发明实:施例: ：提稱德上 It制作 法申 : M moz对形 有靠 M 的图
■25 穆的： 暴粗进翁遊火：处遝， 具 :可 &括： 在氡 ¾条件卞： 对爾成 有:源::极、 漏:极 数据逢 WWM：的特威基：板悲行加熟处理， 籍加赫温度 顯在 1 ¾至 200 r：進清 ：，翁 ¾时长控制在 lOmin ¾ lh范扁。
在具体实施晴，： # *t 糖型錄翁的薄霍晶体管玲阵: 基歡 为倒进行说明 , 本疫：明.奥 ft提籍的上逑剁作 法 的歩餘 :8401：廣 † 30 慕基板 Ji形威：雞极、： 漏极.和救据幾: ¾: 形:之翁:， 还可：以包转::
首先， 在衬底基板上采爾:→ M图:工.¾形成舞极:和栅线的图形； m , 在形:威有栅极和栅魏的:图：形的特:叛基板上形 栅 .緣层；
Figure imgf000012_0001
2、, 在艰威有栅极和柵线補歸形詩衬處：基板上奉 詹:绝 层；
3.： 在栅逯緣屬：上与：栅板对应: tf区德形處: 德慕的图形:;
4 在形威有有源皋的：¾形的衬¾基拔上形:咸刻 $t阻 层蹄爾 ；
5、 乘用: ^誦 ®工 ¾在遊嚴有:刻衡應挡i 爾 的 塞基板上編
：5 威奠.极、 顯极和数麟线的易形
本发明实:施例:提供 阵列碁:板騎制: #方 并没 ¾*:对上:迷步骤 1 -5
M M的真 #实 与 有 术 :翻：同：， ^做膂述;：
6、对锻 有 极、滴载和数据线的图:舉的衬底塞板 ¾lf:¾ C处舊， 在源极、 漏载和数据线的图耀的表面形威：氧 衡簿膜：;；
7 在衬底基板 1 :威械极 1 1 (: ¾ 8a中来谁出:） 漏极 2和
：腸线 I' 興 8a中来舉出)的園 H不重叠的公共电极 7 辑形，: 義 7a和菌 M
:8、.. 在形:處霧 共电槺 7 ¾Τ图形 ：敎底基献 . 1上 藏雜化晨 6 i M ■7b中来：示 ）：：薄膜， 通逸翁蚀： ：艺在位于稱粗 2上：方'的氧 疆尊膜 5: 15 (瞎 lb 未示出:: )和钝 ：6薄膜:中儀 第 过孔 A; '如顯 7b和倒
8 b ；
9 , 多钝化屋: 6 (图: 7¾中来示出 I的图形上形:氣电樣 ¾暴的;暴素电 ¾ 3： 连接鄭 缝:围: ¾ 逸接部: 4通过笫一过 A与:漏极 :2电性:逸楼， ^τ :图 e ：图 3 ¾ '辨舉 :。
20： 秦 — m樹 , 本发明 施例¾¾供了 ¾ 装 :；，： 括 本发窗粱施 «提供的 迷阵列寡板， 途袭示装置" ： 手机、 平板 %脑、 ¾视抓、 显：示器、 笔记拿¾鹏、 戲码翻：榧、 导^ ¾c等俱何具有
Μ Φ功 f品或部件。. 潘 装直的'：实施可 参¾上 阵 基板的 实施例:， 重 赴不再赘 。
■25 本夏嚷：实 :：雜倒雜供的一种 舞基風、 其制 ·:方法 显 装置 由: 于在同:层设置的源.极.、： 漏极和数据幾翁表面異有对涯极、 漏极:和数据 线:兹::过是:火;处壞后 :形:威赫氧 聰::薄膜:，： 逸样,： 在藩极、 暴极和:数据线 在萬 ϋ方釆用狗 β工¾奪威像素：电极 ：图，爾 i 中'， 氧化物簿 膜 :可 护下方裤樣极和数椐线^劍 形 t像素电¾厨图：鶴胜不:被 so M ¾ 可以：聰念彩响： 彔鋒板的嚴承 质 :； # JL, ¾接部 ¾过 往.于漏极上方且贯穿 Ιι化艇參滅的第一:: ϋ孔眷:漏极与像素 极电:性建 接,. A而:可 保证 奉面：板翁 Μ Μ Φ 。 本领璣的歡术:人 可献对本发明: l行备秤改:动 变型:而 :不: 脱离本发明的:蕕神和范:围。 这..样, 倘若本发明姆逸齒修 变型属于 发明杈利要求夏其等同 的豫围之 ί ， m幕发 也食 ¾ ¾奢逸些 改动和变型在内。

Claims

权 要 求
1. 一秤陴列基 ϋ： s#: 翁 基板， 位于所 衬寐基板上且
i置的纏极、 漏极:和数椐线， ¾ 暴辨：迷滅极、： 漏 和数据线: it在膜
：；5 暴上欽置 像素电赫:； 其中， 括: 禱;
在所 ¾源掘、 漏掘:和歡据线 表面真 对所：纖源极、 瑪¾和数据 线繞 i 火处雜后權歲 暴 着::薄慮.；
：第一 L， 所¾第一过 ¾暴于'所¾漏极 Ji;方且贯穿辦：迷氧化物薄
M 所迷连接部通：过所迷笫:一 孔鲁所 漏 fc 絲迷像素¾叙 性连 接:。
2. 如杈利：要 1所逑的阵 基板, 其中， 在所迷攀食电 ί上 依 鲞设 ¾ ¾ Jri*公養电极， 所述: 滅所述攝 极的:上:方;
所 连接部 脚 身 ^Μ 慕设翼 JL相亙遞:錄,: 且所银第一嫂
15 孔还贯擎 钝 层
所 ¾¾¾ ¾ 敷獰識 ¾J：图形：募本重廉;： 第： 过 t , 所迷第 于所迷像素电极上 JL贯穿所 ¾钝化 : 逑逸接部適 ¾：所: i 第 过 与:胖迷像景电极电樣逸
：3. 权利要乘 1所迷的 列:基板, 其中., 还愈括; 位 f所迷像泰 20： 电 ft.与 錄极:、 藥批 据幾所在臈 之间的脊典电 ， ¾λ底 于 所迷像素电:极与所途 共电极之间:的钝化逢 , 所迷德 层延伸到:所迷 极的:上方；
所逑 ^典电极和霄迷漏极的霄形 : 重: 1；
脉迷逄接部与鄭迷像素电极:阔慕¾置， 所迷第一过孔迷贯穿所迷
■25 钝化墓
4. 如板利要氛 1 任一项翁述的阵到 :基¾， 其中、 所迷源极、 潘 极和義据线钓:材朴 铜：:， 薄謹：的:#料为 铜 ,
:5: 权剩：要攀 1 ·—项:辨迷翁降 :暴板， 其中:， ¾惠括: 位 - MMM和漏极卞 :方:且 W Ά滅极和: 极电德進:接 有纖
30 M
為齡速 f源篇相互绝:緣且相对设. : ：的 ¾极„
6. 如权利要求 : 1-3: #—颂翁 的阵判基: fe. 其中， 迷氧化稱薄 膜::的 度为 l Onrn至 l ODiim ,
7. 一种阵列:基板終制作 禽， 其中, 包括爹骤：：
采用一次翁輕.工 %在:衬麻:基秕 J， :源紙：、: 漏极和翁据:线 : i 对形咸有'所逑纖极.、 漏槐:和數据线辨 ®形的 底墓板 逮 ^处 ：5 理，. 拿¾迷灘极、 满极和数塘翁 騎形的泉通形 ¾氧 物薄膜：；
在;经逑所選退 处理 的 底基板上难處像素电极和建 部:的图 . 其中，
所迷连暴部遮过佳 f辨逑漏¾上方旦贯穿 氧：化物薄膜 :的:第一 过孔 所述漏救与:所迷像素电极电教连籍。
8, 如权利要乘 7所：逑翁 5^法,： 其中， 所途在村底基親上厳威像素 极的爾，的參骤， ：
森. 迷材底募板上形 i与新迷源::极、 漏:: ¾:和: ft据线的 ¾菊互^雷 叠的:像 :素 极 图形；
：所: ': 法
15 在形威有所述雜素 ¾极 :曙雞的尊處基板上戚威魏化易薄虚 , 盧
¾ 蚀工 在位子 逸纖极 辨逃氧化翁薄朦和錄 薄藤 形威第一遊孔； 在形 所迷第^"过 ¾■·的同:时， 在位于解逸像素电极 上方:的所 銥 层薄膜 f: 威举二过 ；
在辦迷钝化；层的图:離上谓:處相 缘 公共电滅和途接部的图: 20： 耀:; 所迷 德鄭邇过解 ϋ笫: ¾£ 与所¾漏板1 fe德逸接 过财逸第 过 与醉迷像素电极电 连凝。：
9. 如杈利：袭求 7所遞的方法，： 中 所錄在：村疯暴教 J 威像素 电极:和连接部的:图形的步骤 ：包括：
在翁迷衬底基板上形 Μ 所 '述:蕩极 图:形直.不重:叠 会共.电极 It:25 霄雕；:：
在形成有 述公共电极錄图: 的:衬底基板上形威钝化爲薄處 , 逋 逸:刻钱工艺:在位于所迷纖:极. J W :的:所迷暴 翁:薄朦 ·所樣钝 层:薄膜
Φ形：威第一 孔。
10. 如权观.要求 7 其申, :所迷象纖过所龍 理后'
30 的衬:處基縣上.形威難會电:辆和:连接部的 '图 的歩鑠:， hMz
在所迷 化 的图形上形:成电性连凝的像素电:极和逢属壽的图:
% \ 所.迷遴接部:通过 迷 :第一 i :礼与所迷:漏:极港性连接。
11. 如: fe:利義 7- K) ¾—:项：身迷的：方 ， 对形咸有歸4源 极、 纏极和謙据:幾翻：围 的：戰 &基械 _ 行退火处理 揚骤 *. ¾括:
在氣 ¾条 下， 对形成:有所迷源 、 漏 魏 的瞬形：的對¾ 基板进行加热:处理， p¾¾ : ? 150 ^ J. :200 3 , 加¾时 为 1¾ιώι至
12. 如¾利要求 : -K3 :任一项所迷翁:方法， 其中, 称迷在衬處基板: 咸纏 ¾、 稿;樣 儀据 ft雜 1形的歩聰 翁:， 还包:括：
在衬 基板上采用:一愈:构图工 £:形威栅板：和:輸线的图
在厢威有所述柵极和柵线的爾形崎衬底碁板上形成栅：绝緣层;： 在 :迷栅 ¾蒸层 与身雄栅极对应裔:区域 威有纖遷祷遷 :
在形成有所述有源屎 图，錄衬處碁辆: 成刻蚀阻措廣的 n 形、
13. 一种^杂装置， 其中, ：fe括： 如权:利:要求. 1-6:任一项翁纖 :葡阵
¾基板„
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