CN100337306C - 灰调掩模的制造方法和灰调掩模 - Google Patents

灰调掩模的制造方法和灰调掩模 Download PDF

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Publication number
CN100337306C
CN100337306C CNB2004100625413A CN200410062541A CN100337306C CN 100337306 C CN100337306 C CN 100337306C CN B2004100625413 A CNB2004100625413 A CN B2004100625413A CN 200410062541 A CN200410062541 A CN 200410062541A CN 100337306 C CN100337306 C CN 100337306C
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CN
China
Prior art keywords
pattern
semi
light transmitting
light shielding
transmitting part
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Expired - Lifetime
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CNB2004100625413A
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English (en)
Chinese (zh)
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CN1577085A (zh
Inventor
井村和久
佐野道明
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Hoya Corp
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Hoya Corp
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Publication of CN1577085A publication Critical patent/CN1577085A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2004100625413A 2003-06-30 2004-06-30 灰调掩模的制造方法和灰调掩模 Expired - Lifetime CN100337306C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003187960 2003-06-30
JP187960/2003 2003-06-30

Publications (2)

Publication Number Publication Date
CN1577085A CN1577085A (zh) 2005-02-09
CN100337306C true CN100337306C (zh) 2007-09-12

Family

ID=34587128

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100625413A Expired - Lifetime CN100337306C (zh) 2003-06-30 2004-06-30 灰调掩模的制造方法和灰调掩模

Country Status (4)

Country Link
JP (2) JP4729606B2 (ja)
KR (3) KR101172645B1 (ja)
CN (1) CN100337306C (ja)
TW (1) TWI286663B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105717737A (zh) * 2016-04-26 2016-06-29 深圳市华星光电技术有限公司 一种掩膜版及彩色滤光片基板的制备方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4587837B2 (ja) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク
TWI395053B (zh) * 2005-02-28 2013-05-01 Hoya Corp 灰階罩幕及灰階罩幕毛胚
KR100800301B1 (ko) * 2005-07-05 2008-02-01 주식회사 에스앤에스텍 그레이톤 블랭크마스크 및 포토마스크 제조방법
KR100850511B1 (ko) * 2005-12-22 2008-08-05 주식회사 에스앤에스텍 하프톤 블랭크 마스크 및 포토마스크의 제조방법
KR100812253B1 (ko) * 2006-01-20 2008-03-10 주식회사 에스앤에스텍 그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크
CN1808267B (zh) * 2006-02-13 2010-12-01 友达光电股份有限公司 掩膜及其制造方法及其应用
KR100822296B1 (ko) * 2006-04-10 2008-04-15 엘지마이크론 주식회사 다단 구조를 가지는 하프톤 마스크 및 그 제조 방법
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP2009128558A (ja) * 2007-11-22 2009-06-11 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
CN101738846B (zh) * 2008-11-17 2012-02-29 北京京东方光电科技有限公司 掩模板及其制备方法
KR101186890B1 (ko) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 하프톤 마스크 및 이의 제조 방법
CN101943854B (zh) * 2009-07-03 2012-07-04 深圳清溢光电股份有限公司 半灰阶掩模板半曝光区的设计方法及其制造方法
CN108267927B (zh) * 2011-12-21 2021-08-24 大日本印刷株式会社 大型相移掩膜
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
KR102253995B1 (ko) * 2013-03-12 2021-05-18 마이크로닉 아베 기계적으로 생성된 정렬 표식 방법 및 정렬 시스템
CN104849525B (zh) * 2014-02-13 2017-12-01 上海和辉光电有限公司 使用测试组件的测试方法
KR102378211B1 (ko) * 2015-06-23 2022-03-25 삼성디스플레이 주식회사 마스크 및 이를 이용한 표시장치의 제조방법
CN105529274B (zh) * 2016-02-02 2018-10-26 京东方科技集团股份有限公司 薄膜晶体管的制作方法、阵列基板和显示装置
CN106887439A (zh) * 2017-03-21 2017-06-23 上海中航光电子有限公司 阵列基板及其制作方法、显示面板

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
JPH08106151A (ja) * 1994-10-04 1996-04-23 Sony Corp 位相シフト・マスクおよびその製造方法
JPH0943830A (ja) * 1995-08-03 1997-02-14 Hoya Corp ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク並びにそれらの製造方法
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
JPH11289010A (ja) * 1998-04-01 1999-10-19 Sony Corp 多層配線の形成方法
JPH11295874A (ja) * 1998-04-15 1999-10-29 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法
JPH11327121A (ja) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク
JP2000111958A (ja) * 1998-10-01 2000-04-21 Samsung Electronics Co Ltd ４枚のマスクを利用した液晶表示装置用薄膜トランジスタ基板の製造方法及び液晶表示装置用薄膜トランジスタ基板
JP2001022048A (ja) * 1999-07-07 2001-01-26 Toppan Printing Co Ltd 遮光領域つきハーフトーン型位相シフトマスク
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
CN1442884A (zh) * 2002-03-01 2003-09-17 株式会社日立制作所 电子装置的制造方法

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JPH0764274A (ja) * 1993-08-30 1995-03-10 Sony Corp 位相シフトマスク及びその製造方法
JPH0934099A (ja) * 1995-07-25 1997-02-07 Hoya Corp 位相シフトマスク及びその製造方法
JPH09258426A (ja) * 1996-03-18 1997-10-03 Toshiba Corp パターン形成方法
KR100215850B1 (ko) * 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
JPH1064788A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置の製造方法と露光用マスク
JP3749083B2 (ja) * 2000-04-25 2006-02-22 株式会社ルネサステクノロジ 電子装置の製造方法
JP2001324725A (ja) * 2000-05-12 2001-11-22 Hitachi Ltd 液晶表示装置およびその製造方法
KR20020002089A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 고개구율 액정 표시 소자의 제조방법
JP2003029393A (ja) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd マスク、それを用いたパターン形成方法およびリソグラフィ方法
JP3831868B2 (ja) * 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
JPH08106151A (ja) * 1994-10-04 1996-04-23 Sony Corp 位相シフト・マスクおよびその製造方法
JPH0943830A (ja) * 1995-08-03 1997-02-14 Hoya Corp ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク並びにそれらの製造方法
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
JPH11289010A (ja) * 1998-04-01 1999-10-19 Sony Corp 多層配線の形成方法
JPH11295874A (ja) * 1998-04-15 1999-10-29 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法
JPH11327121A (ja) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク
JP2000111958A (ja) * 1998-10-01 2000-04-21 Samsung Electronics Co Ltd ４枚のマスクを利用した液晶表示装置用薄膜トランジスタ基板の製造方法及び液晶表示装置用薄膜トランジスタ基板
JP2001022048A (ja) * 1999-07-07 2001-01-26 Toppan Printing Co Ltd 遮光領域つきハーフトーン型位相シフトマスク
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
CN1442884A (zh) * 2002-03-01 2003-09-17 株式会社日立制作所 电子装置的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105717737A (zh) * 2016-04-26 2016-06-29 深圳市华星光电技术有限公司 一种掩膜版及彩色滤光片基板的制备方法

Also Published As

Publication number Publication date
KR20110122654A (ko) 2011-11-10
KR20070038493A (ko) 2007-04-10
JP4806701B2 (ja) 2011-11-02
TWI286663B (en) 2007-09-11
KR101215742B1 (ko) 2012-12-26
KR20050002662A (ko) 2005-01-10
JP2008282046A (ja) 2008-11-20
CN1577085A (zh) 2005-02-09
JP2008310367A (ja) 2008-12-25
TW200506514A (en) 2005-02-16
KR101172645B1 (ko) 2012-08-08
KR101182038B1 (ko) 2012-09-11
JP4729606B2 (ja) 2011-07-20

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Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

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