CN100337306C - Method for producing grey mask and grey mask - Google Patents

Method for producing grey mask and grey mask Download PDF

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CN100337306C
CN100337306C CN 200410062541 CN200410062541A CN100337306C CN 100337306 C CN100337306 C CN 100337306C CN 200410062541 CN200410062541 CN 200410062541 CN 200410062541 A CN200410062541 A CN 200410062541A CN 100337306 C CN100337306 C CN 100337306C
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portion
light
semi
pattern
transparent
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CN1577085A (en
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井村和久
佐野道明
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Hoya株式会社
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Abstract

一种可以制造高质量的TFT的半色调膜类型的灰调掩模的制造方法及灰调掩模。 A method of producing a high quality can be produced gray tone halftone mask film type TFT and a gray tone mask. 一种具有遮光部、透光部和半透光部的灰调掩模的制造方法,具有下述工序:准备在透明基板(21)上依次形成了半透光膜(22)和遮光膜(23)的掩模坯;在掩模坯上形成与遮光部对应的区域的抗蚀图案(24a),通过将该抗蚀图案(24a)作为掩模来蚀刻遮光膜(23),在半透光膜(22)上形成遮光部;其次,在至少包含半透光部的区域中形成抗蚀图案(24b),通过把该抗蚀图案(24b)作为掩模来蚀刻半透光膜(22),形成半透光部和透光部。 Having a light-shielding portion, the method for producing the gray-tone mask and a semi-transparent portion of the light transmitting portion, including the following steps: preparing sequentially forming a semitransparent film (22) and a light-shielding film on a transparent substrate (21) ( 23) the mask blank; on the mask blank is formed with the light shielding portion corresponding to the resist pattern (24a) of the region, by using the resist pattern (24a) as a mask to etch the light-shielding film (23), semipermeable a light shielding film is formed on a portion (22); Next, a resist pattern (24b) in a region including at least part of the semi-transmissive, semi-permeable film is etched (by the resist pattern 22 (24b) as a mask ), forming a light-transmitting portion and the semi-transparent portion.

Description

灰调掩模的制造方法和灰调掩模 Gray tone mask in the method for producing the gray-tone mask and

技术领域 FIELD

本发明涉及适合在薄膜晶体管液晶显示装置(Thin Film TransistorLiquid Crystal Display:以下称为TFT-LCD)等的制造中使用的灰调掩模(graytone mask)的制造方法和灰调掩模。 The present invention relates to apparatus suitable for (Thin Film TransistorLiquid Crystal Display: hereinafter referred to as TFT-LCD) in a thin film transistor liquid crystal display gray-tone mask (graytone mask) used in the manufacturing method and manufacturing gray-tone mask.

背景技术 Background technique

专利文献1:特开2000-111958号公报非专利文献1:“月刊エフピ一ディ·インテリジエンス(FPD·Intelligence)”,1999年5月,p.31-35。 Patent Document 1: Laid-Open Patent Publication No. 2000-111958 Non-Patent Document 1: "Monthly Ester fu ピ a video game ィ イ nn · Te ri ji Orient Co. su (FPD · Intelligence)", 1999, p.31-35.

由于TFT-LCD具有与CRT(阴极射线管)相比易于做成薄型且耗电低的优点,因此当前其商品化正在急速进展。 Since the TFT-LCD has as compared with a CRT (cathode ray tube) is thin and easy to make the advantages of low power consumption, so that the current is rapidly commercialization progress. TFT-LCD具有在排列为矩阵状的各像素中排列着TFT的结构的TFT基板,并具有对应于各像素排列着红色、绿色和蓝色像素图案的滤色片夹着液晶相重叠而成的概略结构。 TFT-LCD having the TFT substrate are arranged in a structure of a TFT of the respective pixels are arranged in a matrix, and each pixel has a corresponding arrangement of red, green and blue pixels sandwiching the liquid crystal color filter pattern formed overlaps schematic structure. TFT-LCD的制造工序个数很多,仅TFT基板就要用5~6张光掩模进行制造。 The number of manufacturing steps of the TFT-LCD lot, only the TFT substrate must be manufactured with 5-6 Chang mask.

在这样的状况下,提出了利用4张光掩模进行TFT基板制造的方法(例如专利文献1、非专利文献1)。 Under such circumstances, a method (e.g. Patent Document 1, Non-Patent Document 1) using a mask 4 Chang manufacturing the TFT substrate.

该方法通过利用具有遮光部、透光部和半透光部(灰调部)的光掩模(以下称为灰调掩模),减少使用的掩模张数。 The method by using the light shielding portion having a light-transmitting portion and the semi-transparent portion (gray tone portion) of the photomask (hereinafter referred to as a gray tone mask), to reduce the number of masks used sheets. 在图10和图11(图11是图10的制造工序的后续工序)中,表示出利用灰调掩模的TFT基板制造工序的一例。 In FIGS. 10 and 11 (FIG. 11 is a subsequent step in the manufacturing process of FIG. 10), and one case using a gray-tone mask shown a TFT substrate manufacturing process.

在玻璃基板1上,形成栅极用金属膜,通过利用光掩模的光刻工艺,形成栅极2。 On a glass substrate 1, a gate metal film by a photolithography process using a photomask, the gate electrode 2 is formed. 其后,形成栅极绝缘膜3、第1半导体膜4(a-Si)、第2半导体膜5(N+a-Si)、源漏极用金属膜6以及正性抗蚀膜7(图10(1))。 Thereafter, a gate insulating film 3, a first semiconductor film 4 (a-Si), the second semiconductor film 5 (N + a-Si), source and drain metal film 6 and a positive resist film 7 (FIG. 10 (1)). 其次,通过利用具有遮光部11、透光部12和半透光部13的灰调掩模10,对正性抗蚀膜7进行曝光和显影,形成第1抗蚀图案7a,使其覆盖TFT沟道部和源漏极形成区域、数据线形成区域,并且使沟道部形成区域比源漏极形成区域薄(图10(2))。 Then, by using the light shielding portion 11 having a gray-tone mask 12 and the semi-transparent portion of the light transmitting portion 13 10, 7 of the positive resist film is exposed and developed to form a first resist pattern 7a, to cover the TFT channel portion and the source and drain regions are formed, the data line forming region, and the portion of the channel region is formed thinner than the source and drain regions are formed (FIG. 10 (2)). 其次,将第1抗蚀图案7a作为掩模,蚀刻源漏极用金属膜6和第2、第1半导体膜5、4(图10(3))。 Next, the first resist pattern 7a as a mask, etching the source-drain metal film and the second 6, the first semiconductor film 5,4- (FIG. 10 (3)). 其次,通过用氧进行灰化(ashing)来除去沟道部形成区域的薄抗蚀膜,形成第2抗蚀图案7b(图11(1))。 Secondly, the channel portion is removed by ashing (ashing) using oxygen to form a thin resist film in the region to form a second resist pattern 7b (FIG. 11 (1)). 然后,将第2抗蚀图案7b作为掩模,蚀刻源漏极用金属膜6,形成源/漏极6a、6b,其次,蚀刻第2半导体膜5(图11(2)),最后,剥离残留的第2抗蚀图案7b(图11(3))。 Then, the second resist pattern as a mask 7b, etching the source-drain metal film 6, forming the source / drain electrodes 6a, 6b, followed by etching the second semiconductor film 5 (FIG. 11 (2)), and finally, peeled the residual second resist pattern 7b (FIG. 11 (3)).

如图12所示,此处所用的灰调掩模10具有:与源/漏极对应的遮光部11a、11b;透光部12;以及与沟道部对应的半透光部(灰调部)13。 12, the gray-tone mask 10 used herein has: source / drain corresponding to the light shielding portions 11a, 11b; 12 a light-transmitting portion; and a semi-transmissive portion corresponding to the channel portion (gray tone portion ) 13. 半透光部13是形成了遮光图案13a的区域,该遮光图案13a由使用灰调掩模的大型LCD用曝光机的分辨率限度以下的微细图案构成。 13 is a semi-transparent portion formed in a region 13a of the light-shielding pattern, the light shielding pattern 13a is constituted by using the large LCD gray tone mask with the resolution limit of the exposure machine fine patterns. 通常,遮光部11a、11b和遮光图案13a都是由Cr或Cr化合物等相同材料构成的相同厚度的膜形成。 Typically, the light shielding portions 11a, 11b and the light shielding film patterns 13a are the same thickness made of the same material as Cr or a Cr compound is formed. 使用灰调掩模的大型LCD用曝光机的分辨率限度在步进方式的曝光机上大约为3μm、在镜面投影式的曝光机上大约为4μm。 Large gray tone mask using the LCD resolution limit of the exposure machine exposure device in a stepwise manner about 3μm, in a mirror projection type exposure apparatus is approximately 4μm. 因此,例如,设在图12的半透光部13中的透过部13b的空白宽度小于3μm,设遮光图案13a的线宽小于曝光机的分辨率限度以下的3μm。 Thus, for example, provided in the semi-transmissive portion 12 is transmitted through the blank 13 is smaller than 3μm width portion 13b, the line width of the light blocking pattern 13a is set smaller than the resolution limit of the exposure machine 3μm or less.

对于上述微细图案类型的半透光部,在灰调部分的设计上,具体地说,有把用于获得遮光部和透光部之间的半色调效果的微细图案做成线&空白型、还是做成点阵(网点)型、或者做成其它图案的多种选择,而且,在线&空白型的情况下,必须考虑线宽设为多少、透光部分和遮光部分的比例为多少、整体的透过率设计达到什么程度等相当多的问题来进行设计。 For the fine pattern type of semi-transparent portion, the design portion of the gray tone, specifically, for obtaining a fine pattern has the halftones between light transmitting portions and light shielding portions made of wire & amp; Blank Type or make dot (dot) type, or made into a variety of other selected pattern, and that line & amp; the blank type, must consider how much width is set, the ratio of the light-transmitting portion and light shielding portion is much , transmittance of the entire design to achieve a number of questions to what degree design. 此外,在掩模的制造中,要求进行对线宽的中心值的管理以及掩模内的线宽的偏差管理并要求高难度的生产技术。 Further, in manufacturing a mask, the center value of the required line width of the line width in the management and mask bias management technology and requires difficult production.

因此,已经提出了将希望进行半色调曝光的部分做成半透过性的半色调膜(半透光膜)的方案。 Thus, the halftone film (semitransparent film) a portion of the program desired halftone exposure is made semitransparent been proposed. 通过利用该半色调膜,可以减小半色调部分的曝光量,进行半色调曝光。 By utilizing the halftone film, the halftone exposure can be reduced portions, halftone exposure. 通过变更为半色调膜,在设计中只要研究整体的透过率需要达到多少即可,对于掩模,也只要选择半色调膜的种类或膜厚,就可以生产掩模。 By changing the halftone film, in the design of the study as long as the overall transmission rate can reach the number required for the mask, as long as select the type or thickness of the halftone film, you can produce a mask. 因此,在掩模制造中,只要对半色调膜的膜厚进行控制即可,比较容易进行管理。 Thus, in the mask manufacture, as long as the film thickness of the half-tone film can be controlled, relatively easy to manage. 此外,在用半透光部形成TFT沟道部时,如果是半色调膜,由于通过光刻工序能够容易地形成图案,因此也可以使沟道部的形状变得复杂。 Further, when the TFT channel portion is formed by semi-transparent portion, if the film is a halftone, since a pattern can be easily formed by photolithography, so that the shape of the channel portion may become complicated.

以往,半色调膜型的灰调掩模是如下制造的。 Conventionally, a film type half-tone gray-tone mask is manufactured as follows. 此处,可举出如图1所示的TFT基板的图案100作为一例进行说明。 Here, the pattern can include the TFT substrate 100 shown in Figure 1 will be described as an example. 图案100由以下部分构成:遮光部101,其由与TFT基板的源极和漏极对应的图案101a、101b构成;半透光部103,其由与TFT基板的沟道部对应的图案构成;透光部102,其形成于上述图案的周围。 Pattern 100 consists of the following components: the light-shielding portion 101, which is composed of a source and a drain corresponding to the pattern of the TFT substrate 101a, 101b; semi-transparent portion 103, which is composed of the channel portion of the TFT substrate corresponding to a pattern; light transmitting portion 102 which is formed around the pattern.

首先,准备在透明基板上依次形成了半透光膜和透光膜的掩模坯(mask blank),在该掩模坯上形成抗蚀膜。 First, a mask blank are sequentially formed a semitransparent film and the light-transmissive film (mask blank) on a transparent substrate, forming a resist film on the mask blank. 其次,通过进行图案描绘、显影,在与上述图案100的遮光部101和半透光部103对应的区域上,形成抗蚀图案。 Then, by drawing pattern, developed in the light shielding portion and the pattern portion 100 and the semi-transparent region 101 corresponding to 103, to form a resist pattern. 其次,通过用适当方法进行蚀刻,除去与没有形成上述抗蚀图案的透光部102对应的区域的遮光膜及其下层的半透光膜,形成如图13(1)所示的图案。 Next, by etching using an appropriate method, it is not formed with the removed portion 102 corresponding to the light-transmitting film and a semi-light-shielding film region of the lower layer resist pattern 13 is formed (1) pattern shown in FIG. 即,形成透光部202,同时,形成与上述图案100的遮光部和半透光部对应的区域的遮光图案201。 That is, the light-transmitting portion 202 is formed at the same time, the light shielding portion is formed with the pattern 100 and the semi-transparent portion pattern corresponding to the light shielding region 201. 在除去残留的抗蚀图案之后,通过再次在基板上形成抗蚀膜,进行图案描绘、显影,此次在与上述图案100的遮光部101对应的区域,形成抗蚀图案。 After removal of the remaining resist pattern is again formed by the resist film on a substrate, drawing pattern, developed with the pattern in the light-shielding portion 101 corresponding to the region 100, the resist pattern is formed. 其次,通过适当的蚀刻,仅除去没有形成抗蚀图案的半透光部区域的遮光膜。 Then, by an appropriate etching, the light shielding film is not only semi-transparent portion forming region of the resist pattern. 从而,如图13(2)所示,形成与上述图案100对应的图案。 Thus, 13 (2), forming a pattern 100 corresponding to the pattern. 亦即,形成了由半透光膜图案203构成的半透光部,同时,形成了遮光部图案201a、201b。 That is, the formation of a semi-transparent portion formed of a semitransparent film pattern 203, while forming a light shielding pattern portion 201a, 201b.

但是,根据这样的以往的掩模制造方法,由于在第1次形成透光部的光刻工序与第2次形成半透光部的光刻工序中,分别进行图案描绘,因此,必须进行对准,以使第2次描绘与第1次描绘不产生图案偏差,但实际上,即使提高对准精度也很难完全消除对准偏差。 However, according to such a conventional mask manufacturing method, since the photolithography process and the photolithography process light transmitting portion is formed 2nd semi-transparent portion is formed at the first time, each drawing pattern, therefore, necessary to registration, so that the 2nd drawing depicting the times of the first variation pattern does not occur, but in fact, even improve the alignment accuracy is difficult to completely eliminate the misalignment. 例如,如图14(a)所示,由于对准偏差的原因,当半透光部图案203沿图示的X方向偏移而形成时,与TFT基板的源/漏极对应的遮光部的面积与设计值不同,会产生TFT特性发生变化的问题。 For example, FIG. 14 (a), the misalignment due to, when the X-direction along a semi-transparent portion pattern 203 to form the offset shown, the TFT substrate of the source / drain corresponding to the light shielding portion area and design values ​​are different, can cause problems of TFT characteristics change. 此外,如图14(b)所示,由于对准偏差的原因,当半透光部图案203沿图示的Y方向偏移而形成时,会由于TFT基板的源/漏极间的短路而产生问题。 Further, FIG. 14 (b), the misalignment due to, when the Y-direction along a semi-transparent portion pattern 203 to form the offset illustrated, due to a short circuit between the source / drain of the TFT substrate and cause problems. 总之,在这样的以往的掩模制造方法中,要高精度地形成TFT中特别重要的沟道部分是很困难的。 In short, in such a conventional mask manufacturing method, particularly important to accurately in the channel portion of the TFT is formed it is difficult.

发明内容 SUMMARY

因此,本发明的目的在于解除以往的问题点,提供能制造高质量的TFT的半色调膜型的灰调掩模的制造方法。 Accordingly, an object of the present invention is releasing conventional problems, a method for manufacturing a high quality can be manufactured TFT gray tone halftone mask film type.

为解决上述课题,本发明具有下述方案。 In order to solve the above problems, the present invention has the following scheme.

(方案1)一种灰调掩模的制造方法,该灰调掩模是制造薄膜晶体管用的灰调掩模,其具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少依次形成了半透光膜和遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在半透光膜上形成遮光部;以及其后的半透光部图案形成工序:在至少包含所述半透光部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成半透光部和透光部,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与 (Scheme 1) A method for producing a gray tone mask, the gray-tone mask is a gray-tone mask manufacturing a thin film transistor having a patterned light-shielding portion, the light-transmitting portion and the semi-transparent portion formed of a the light-shielding portion pattern having via the semi-transparent portion adjacent portion, the manufacturing method comprising: a preparation step of: preparing at least the cover is formed of a semitransparent film and the light-shielding film on a transparent substrate, mold material; shielding portion pattern forming step of: forming a resist pattern area corresponding to the light shielding portion on the mask blank through the resist pattern as a mask to etch the light-shielding film is exposed, in the semi-transparent the light-shielding portion formed on the film; and a subsequent semi-transparent portion pattern forming step: forming a resist pattern in the region of the semi-transmissive portion comprising said at least by the resist pattern as the mask to etch the exposed semipermeable film, forming the light-transmitting portion and the semi-light transmitting portion, the light shielding portion in the pattern forming step, the designated position of the light-shielding film via the semi-transparent portion formed in the semi-transparent portion pattern the resist pattern is used in the step comprising at least 所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Semi-transparent portion of the light-shielding portion sandwiched between the corresponding region, and the resist pattern larger than that of the region.

(方案2)一种灰调掩模的制造方法,该灰调掩模是制造薄膜晶体管用的灰调掩模,其具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了具有透过率取决于膜厚的特性的遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻露出的遮光膜,使其为可得到规定透过率的膜厚,在基板上形成遮光部;以及其后的半透光部图案形成工序:在至少包含所述半透光部和遮光部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模,进一步蚀刻并除去露出的半蚀刻后的遮光膜,形成半透光部和透光部,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所 (Scheme 2) A method for producing a gray tone mask, the gray-tone mask is a gray-tone mask manufacturing a thin film transistor having a patterned light-shielding portion, the light-transmitting portion and the semi-transparent portion formed of a the light-shielding portion pattern having via the semi-transparent portion adjacent portion,, the manufacturing method comprising: preparing the steps of: preparing at least formed on a transparent substrate having a transmittance depending on the film thickness light-shielding film mask blank characteristic; a light-shielding portion pattern forming step: on the mask blank is formed in the portion corresponding to the light shielding region of the resist pattern by the resist pattern as a mask for etching the exposed half the light shielding film, so as to obtain a predetermined thickness of the transmittance, the light shielding portion is formed on a substrate; and thereafter the semi-transparent portion pattern forming step of: including at least the region of the semi-transparent portion and light shielding portion of forming a resist pattern by the resist pattern as a mask, the light-shielding film is further etched and removed after etching the exposed half, forming a light-transmitting portion and the semi-transparent portion formed in the step portion of the light shielding pattern delineation the light-shielding film via the 半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 The position of the semi-transparent portion, the resist pattern is used in the semi-transparent portion pattern forming step comprises at least the semi-transmissive portion corresponding to the light shielding portion sandwiched region, and larger than the area The resist pattern.

(方案3)一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,所述灰调掩模由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案;该制造方法具有在透明基板上形成由遮光部、透光部和半透光部构成的图案的工序,该制造方法的特征在于,形成所述图案的工序具有:遮光部图案形成工序:其包括在透明基板上形成用于形成遮光部的遮光部形成用的抗蚀图案,将该抗蚀图案作为掩模来蚀刻遮光膜的工序;半透光部图案形成工序:其包括在透明基板上形成用于至少形成半透光部的半透光部形成用的抗蚀图案,将该抗蚀图案作为掩模来蚀刻半透光膜的工序;在所述遮光 (Scheme 3) A method for producing a gray tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate, a pattern having a light-shielding portion, the light-transmitting portion and the semi-transparent portion constituting a pattern having the light shielding portion via the semi-transparent portion adjacent a portion of the gray-tone mask is formed with the thin film transistor substrate corresponding to the source and drain by the light shielding pattern portion by said semi-transparent portion formed in a pattern corresponding to the channel portion; the manufacturing method includes a step of forming a pattern made from a shielding portion, the light-transmitting portion and the semi-transparent portion of the transparent substrate, which method is characterized in that, the formed a step of patterning includes: a light-shielding portion pattern forming step: which comprises a light shielding portion for forming the light-shielding portion is formed with the resist pattern on a transparent substrate, and the resist pattern as a mask to etch the light shielding film step; semipermeable a light portion pattern forming step: which comprises forming on a transparent substrate for forming at least semi-transparent portion of the semi-transparent portion formed with the resist pattern, the resist pattern as a mask a step of etching the semitransparent film; in the light-shielding 图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案,在所述遮光部图案形成工序之后,进行半透光部图案形成工序。 Patterning step, the designated position of the light-shielding film via the semi-transparent portion, a light shielding portion sandwiched resist pattern is used in the step comprising at least the semi-transparent portion in said pattern the semi-transmissive portion corresponding to the region, and the larger area than the resist pattern after the step of patterning the light-shielding portion, a semi-transparent portion pattern forming step.

(方案4)一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该灰调掩模由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少依次形成了半透光膜和遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在半透光膜上形成由与源极和漏极对应的图案构成的遮光部;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜, (Scheme 4) A method for producing a gray tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a pattern made from a shielding portion, the light-transmitting portion and semi-transparent portion, said pattern having the light shielding portion via the semi-transparent portion adjacent a portion of the gray-tone mask is formed by the light shielding portion of the thin film transistor substrate corresponding to the source and drain pattern by the semi- light transmitting portion is formed with a pattern corresponding to the channel portion, the manufacturing method comprising: a preparation step of: preparing a mask blank successively forming at least a semitransparent film and the light-shielding film on a transparent substrate; a step of patterning the light shielding portion : forming a resist pattern and the source and drain electrodes corresponding to the pattern on the mask blank through the resist pattern as a mask to etch the light-shielding film is exposed, is formed by a semi-transparent film in the light-shielding portion corresponding to the source and drain constituting a pattern; and a subsequent semi-transparent portion pattern forming step: forming a resist pattern in a region including at least a portion of said channel, by which the resist pattern as a mask etching the exposed semi-permeable film, 成与沟道部对应的半透光部,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 A semi-transmissive portion corresponding to the channel portion, the light shielding portion in the pattern forming step, the designated position of the light-shielding film via the semi-transparent portion, in the step of forming the semi-transparent portion pattern the resist pattern is used comprising at least a semi-transparent portion of the light shielding portion sandwiched corresponding region, and larger than the area of ​​the resist pattern.

(方案5)一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了具有透过率取决于膜厚的特性的遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻露出的遮光膜,使其为可得到规定透过率的膜厚,形成由与源极和漏极对应的图案构成的遮光部;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模,进一步 (Scheme 5) The method for producing a gray tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portion, the light shielding portion is formed by and source and drain electrodes corresponding to the pattern of the thin film transistor substrate, forming a pattern corresponding to the channel portion by the semi-transparent portion, said pattern having a light-shielding portion via the semi-transparent portion of the relative adjacent portion, the manufacturing method comprising: preparing the steps of: preparing a mask blank is formed having a film thickness depends on the characteristics of transmittance of the light-shielding film on a transparent substrate, at least; light-shielding portion pattern forming step: in the forming a resist pattern corresponding to the source and drain of the pattern by the resist pattern as a mask to expose the light-shielding film on said half-etching mask blank, so as to obtain a predetermined transmittance film thick, is formed by the light shielding portions corresponding source and drain constituting a pattern; forming step and the subsequent semi-transparent portion pattern: a resist pattern is formed in a region including at least the portion of the channel by which the anti- etch pattern as a mask, a further 刻并除去露出的半蚀刻后的遮光膜,形成与沟道部对应的半透光部,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 And removing the light shielding film engraved after etching the exposed half, semi-transparent portion is formed corresponding to the channel portion, the light shielding portion in the pattern forming step, the semi-transparent portion delineation of the light shielding film interposed therebetween position, the resist pattern is used in the step with the resist pattern comprising at least the semi-transparent portion sandwiched between the shielding portion corresponding to the region, and larger than the area of ​​the semi-transparent portion formed in a pattern.

(方案6)一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在透明基板上形成遮光部;其后的在形成了所述遮光部的透明基板上形成半透光膜的工序;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成半透 (Scheme 6) A method of gray tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portion, the light shielding portion is formed by and source and drain electrodes corresponding to the pattern of the thin film transistor substrate, forming a pattern corresponding to the channel portion by the semi-transparent portion, said pattern having a light-shielding portion via the semi-transparent portion of the relative adjacent portion, the manufacturing method comprising: preparing the steps of: preparing a mask blank is formed in the light shielding film at least on a transparent substrate; a light-shielding portion pattern forming step: on the mask blank is formed and the source and the drain of the resist pattern corresponding to the pattern as a mask to etch the light-shielding film is exposed, the light shielding portion is formed on a transparent substrate via the resist pattern; thereafter formed on the transparent substrate, the light shielding portion is formed semipermeable resist pattern is formed in a region including at least a portion of said channel, by which the resist pattern as a mask to etch the exposed: and subsequent semi-transparent portion pattern forming step; step semipermeable film film, forming a semi-permeable 部和透光部,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Portion and the transparent portion, the light shielding portion in the pattern forming step, the designated position of the light-shielding film via the semi-transparent portion, the resist pattern used in said step of semi-transparent portion pattern forming comprising at least the semi-transparent portion of the shielding portion sandwiched between the corresponding region, and the area is larger than that of the resist pattern.

(方案7)如方案1或4所述的灰调掩模的制造方法,其特征在于,在所述掩模坯的半透光膜和遮光膜之间设有缓冲膜,该缓冲膜用于在通过蚀刻来除去遮光膜时保护半透光膜。 (Scheme 7) The method as described in Scheme 1 for producing gray-tone mask of claim 4, wherein the buffer film is provided between the mask blank of a semitransparent film and the light shielding film, the buffer film is used when the protective film is removed semi-light-shielding film by etching.

(方案8)如方案1至6中任何一项所述的灰调掩模的制造方法,其特征在于,所述灰调掩模具有遮光部与半透光部的相邻部,在所述半透光部图案形成工序中,作为用于形成与所述遮光部相邻的半透光部的半透光部形成用的抗蚀图案,采用将0.1~1μm宽度的边缘区域附加到遮光部侧之后的、比半透光部所对应的区域大的半透光部形成用的抗蚀图案。 (Scheme 8) as described in Scheme 1 to 6. A method for producing any one of the gray-tone mask, characterized in that the gray-tone mask has a light shielding portion and the adjacent portion of the semi-transparent portion, in the semi-transparent portion pattern forming step, as a semi-transparent portion for forming a semi-transparent portion adjacent to the light-shielding portion used for forming resist pattern using the width of the edge region of 0.1 ~ 1μm is attached to the light shielding portion after the side of semi-transmissive region is larger than the corresponding portion of the semi-transparent portion for forming the resist pattern.

(方案9)如方案3至6中任何一项所述的灰调掩模的制造方法,其特征在于,在所述半透光部图案形成工序中,作为用于形成与沟道部对应的半透光部的半透光部形成用的抗蚀图案,采用将0.1~1μm宽度的边缘区域附加到与沟道部对应的区域之后的、比沟道部所对应的区域大的半透光部形成用的抗蚀图案。 (Scheme 9) The production method of any of the gray-tone mask of any one of 3-6, wherein, in the semi-transparent portion pattern forming step for forming the channel portion corresponding to the semi-transmissive semi-transparent portion formed in a portion of the resist pattern, using the region of 0.1 ~ 1μm after the width of the edge region attached to the portion corresponding to the channel, the channel region is larger than the corresponding portion of the semi-transparent using the resist pattern portion is formed.

(方案10)如方案1至6中任何一项所述的灰调掩模的制造方法,其特征在于,由所述遮光部、透光部和半透光部构成的图案是为了在使用所述灰调掩模进行曝光的被处理体上得到下述掩模层的图案,该掩模层用于通过使对被处理体中的感光性材料层的曝光量,在所述遮光部、透光部和半透光部中分别不同,对由不同膜厚的感光性材料层构成的被处理体进行处理。 (Scheme 10) as described in Scheme gray tone mask manufacturing method according to any one, wherein 1 to 6, a pattern composed of the light-shielding portion, the light-transmitting portion and the semi-transparent portion for use in the was obtained following the mask layer on said processed gray-tone mask pattern for exposure, the mask layer by exposure for the photosensitive layer of the material to be processed is in the light shielding portion, through semi-transparent portion and light receiving portion are respectively different, to be processed on a photosensitive material composed of a layer of different thickness is processed.

(方案11)一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,该制造方法的特征在于,在所述沟道部处形成有将0.1~1μm宽度的边缘区域附加到与沟道部对应的区域之后的、比沟道部所对应的区域大的半透光膜。 (Scheme 11) A method for producing a gray tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portion, the light shielding portion is formed by and source and drain electrodes corresponding to the pattern of the thin film transistor substrate, forming a pattern corresponding to the channel portion by the semi-transparent portion, the method is characterized in that, there will be formed at the 0.1 channel portion ~ 1μm edge region attached to a width larger than the corresponding region of the channel portion following the semipermeable film portion corresponding to the channel region.

根据方案1,本发明的灰调掩模的制造方法,具有遮光部图案形成工序及其后的半透光部图案形成工序;该遮光部图案形成工序利用在透明基板上至少依次形成了半透光膜和遮光膜的掩模坯,在该掩模坯上形成与遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模进行蚀刻,在半透光膜上形成遮光部;该半透光部图案形成工序在至少包含半透光部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模进行蚀刻,形成半透光部和透光部。 According to Scheme 1, the gray-tone mask manufacturing method of the present invention, the light shielding portion having a semi-transparent portion pattern forming step and the pattern forming step; the use of the light-shielding portion pattern forming step are sequentially formed at least on a transparent substrate, a semi-permeable film and light-shielding film mask blank, the mask blank is formed on the resist pattern and the light shielding region corresponding to the portion, by etching using the resist pattern as a mask, the light shielding portion is formed in the semi-transparent film; the semi-transparent portion pattern forming step of forming a resist pattern in a region including at least a semi-transparent portion, by etching the resist pattern as a mask, forming the light-transmitting portion and the semi-transparent portion.

因此,虽然进行2次光刻工序,但由于在第1次光刻工序中只对成为遮光部的部分进行图案形成,因此,在该时间点形成包含遮光部及其以外的成为半透光部部分的区域。 Thus, although the photolithography process two times, but to be part of the light shielding pattern portion is performed only in the first photolithography process is formed, thereby forming a semi-transmissive portion comprising a light-shielding portion and beyond at this time point part of the area. 作为结果,由于遮光部与半透光部的位置关系或大小等由第1次图案形成来决定,因此遮光部与半透光部的位置精度等就可以用1次描绘的精度来保障。 As a result, since the light-shielding portion or the size relationship between the position of semi-transparent portion is formed by the first sub-pattern is determined, so the light blocking portion and position accuracy of other semi-transparent portion can be used to protect the accuracy of 1 times depicted. 从而,可以防止以往的由于第2次光刻工序中的描绘时的对准偏差等的影响而造成质量变差。 Thereby, possible to prevent misalignment due to the conventional or the like when the second photolithography step is depicted causing deterioration in quality. 这样,根据方案1的方法,由于作为掩模可以确保足够好的质量,因此,特别适合于制造对遮光部与半透光部的位置精度、或大小、尺寸等图案精度要求高的灰调掩模。 Thus, the method of Scheme 1, as the mask because sufficient quality can be ensured, therefore, particularly suitable for manufacturing high precision positional accuracy of the pattern and the semi-transparent portion of the light blocking portion, or the size, dimensions and the like required gray tone mask mold. 例如,特别适合于制造TFT基板制造用的灰调掩模。 For example, particularly suitable for producing a TFT substrate to manufacture a gray-tone mask.

根据方案2,灰调掩模的制造方法具有遮光部图案形成工序及其后的半透光部图案形成工序;该遮光部图案形成工序利用在透明基板上至少形成了遮光膜的掩模坯,在该掩模坯上形成与遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻遮光膜,以形成遮光部;该半透光部图案形成工序在至少包含半透光部和遮光部的区域中形成抗蚀图案,通过将该抗蚀图案作为掩模进一步蚀刻半蚀刻后的遮光膜,形成半透光部和透光部。 According to Scheme 2, a method for producing the gray-tone mask has a light shielding pattern portion is formed semi-transparent portion pattern forming step and subsequent step; the light shielding portion pattern forming step using a mask blank is formed in the light shielding film at least on a transparent substrate, formed on the mask blank with a resist pattern region corresponding to the light shielding portion by using the resist pattern as a mask for etching the semi-shielding film, to form a light-shielding portion; the semi-transparent portion pattern forming step comprises at least a half light transmitting portions and the light shielding region is formed in part resist pattern by the resist pattern as a mask the light-shielding film after the half etching is further etched to form the light-transmitting portion and the semi-transparent portion.

本方案中所用的掩模坯虽然设置在透明基板上的遮光膜基本上具有遮光性,但其由透过率特性根据膜厚的不同而不同的材料构成。 Light-shielding film mask blank according to the present embodiment is used while disposed on a substantially transparent substrate having a light shielding property, but depending on the film thickness by the transmittance characteristic of the different materials. 即,在透明基板上以透过率大约为0%的膜厚形成遮光膜,而在遮光部以外的区域,如果通过半蚀刻使遮光膜的膜厚变薄,则可得到半透光部所需的大约50%的透过率。 That is, on the transparent substrate in the transmittance of about 0% of a thickness of the light shielding film is formed, and in the region other than the light-shielding portion, when the thickness of the shading film is thinned by half-etching, semi-transparent portion can be obtained to be about 50% transmission. 根据本方案,与上述方案1相同,可得到图案精度高的灰调掩模。 According to the present embodiment, similar to the above embodiment 1, high pattern accuracy can be obtained gray-tone mask. 除此之外,由于使用的掩模坯的层结构简单,因此具有容易制造的优点。 In addition, since the layer structure of the mask blank using a simple, easy to manufacture and therefore has an advantage.

根据方案3,在TFT基板的制造工序中使用的、由遮光部形成与TFT基板的源极和漏极对应的图案并由半透光部形成与源极和漏极间的沟道部对应的图案的灰调掩模的制造方法中,在上述遮光部图案形成工序之后,进行半透光部图案的形成工序。 3, used in the manufacturing process of the TFT substrate, the light shielding portion is formed by the solution according to a pattern corresponding to the drain electrode and the semi-transparent portion is formed by the source of the TFT substrate and the source and the drain corresponding to the channel portion between the the method of manufacturing a gray-tone mask pattern, after the light-shielding portion pattern forming step, the step of forming a semi-transparent portion pattern.

即,在第1次光刻工序中,通过对成为与源极/漏极对应的遮光部的部分进行图案形成,形成该遮光部。 That is, in the first photolithography process, patterning by becoming part of the light-shielding portion and the source / drain corresponding to the light shielding portion is formed. 为了确保高质量的TFT特性,源极和漏极间的沟道部的图案精度是特别重要的。 To ensure a high quality TFT characteristics, pattern accuracy of the channel portion between the source and the drain is particularly important. 根据本方案的方法,在与源极和漏极对应的遮光部以及该源极和漏极间的沟道部,可通过第1次描绘来一次形做成重要的间隙,其位置精度等可用1次描绘的精度来保障。 The method according to the present scheme, the source and the light-shielding portion and the channel portion between the source and the drain of the corresponding source, through a 1st drawing to form a gap made important, the position accuracy available 1 depicts a guarantee of accuracy. 因此,可以防止由于第2次光刻工序中的描绘时的对准偏差等的影响而造成质量变差,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 Thus, misalignment can be prevented due to the influence or the like when the second photolithography step is depicted caused quality deterioration, a high pattern accuracy is required for manufacturing the TFT substrate gray tone mask can be ensured sufficiently good quality .

根据方案4,在TFT基板的制造工序中使用的、由遮光部形成与TFT基板的源极和漏极对应的图案并由半透光部形成与源极和漏极间的沟道部对应的图案的灰调掩模的制造方法中,具有遮光部图案形成工序以及其后的半透光部图案形成工序;该遮光部图案形成工序利用在透明基板上至少依次形成有半透光膜和遮光膜的掩模坯,在该掩模坯上形成与上述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模进行蚀刻,在半透光膜上形成由与源极和漏极对应的图案构成的遮光部;该半透光部图案形成工序在至少包含上述沟道部的区域中形成抗蚀图案,通过将该抗蚀图案作为掩模进行蚀刻,形成与沟道部对应的半透光部。 4, used in the manufacturing process of the TFT substrate, the light shielding portion is formed by the solution according to a pattern corresponding to the drain electrode and the semi-transparent portion is formed by the source of the TFT substrate and the source and the drain corresponding to the channel portion between the the method of manufacturing a gray-tone mask pattern having light-shielding portion pattern forming step and the subsequent step of forming a semi-transparent portion pattern; the pattern forming step using the light shielding portion on the transparent substrate are sequentially formed on at least a semitransparent film and the light-shielding mask blank film to form the source and drain of the resist pattern corresponding to the pattern, etching through the resist pattern as a mask on the mask blank is formed by a semi-transparent film source light-shielding portion corresponding to the drain electrode and the pattern composed of; the semi-transparent portion pattern forming step of forming a resist pattern in a region including at least the channel portion, the etching is performed by using the resist pattern as a mask, the groove is formed semi-transparent portion corresponding to the channel portion.

即,与方案3相同,由于是在上述遮光部图案形成工序之后进行半透光部图案形成工序,因此与方案3相同,可以防止由于第2次光刻工序中的描绘时的对准偏差等的影响而造成质量变差,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 That is, the same as the embodiment 3, since the semi-light transmitting portion is the light shielding portion pattern after the patterning step of forming step, and thus the same as Scheme 3, can be prevented due to misalignment when the second photolithography step is depicted like caused by the influence of quality degradation, as a high pattern accuracy required for manufacturing the TFT substrate of the gray tone mask, to ensure sufficient quality.

根据方案5,在TFT基板的制造工序中使用的、由遮光部形成与TFT基板的源极和漏极对应的图案并由半透光部形成与源极和漏极间的沟道部对应的图案的灰调掩模的制造方法中,具有遮光部图案形成工序以及其后的半透光部图案形成工序;该遮光部图案形成工序利用在透明基板上至少形成了具有透过率取决于膜厚特性的遮光膜的掩模坯,在该掩模坯上形成与上述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻露出的遮光膜,以得到规定的透过率,在透明基板上形成由与源极和漏极对应的图案构成的遮光部;该半透光部图案形成工序在至少包含上述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模进一步蚀刻露出的半蚀刻后的遮光膜,形成与沟道部对应的半透光部。 According to Scheme 5, for use in a manufacturing process of the TFT substrate is formed by the light shielding portions corresponding to the drain electrode and the pattern portion is formed by a semi-transmissive TFT substrate and a source and a channel portion between the source corresponding to the drain the method of manufacturing a gray-tone mask pattern having light-shielding portion pattern forming step and the subsequent semi-transparent portion pattern forming step; step of forming the light shielding portions pattern is formed using a film having a transmittance depending on the transparent substrate at least thickness of the light-shielding film mask blank properties, forming the source and drain resist pattern corresponding to the pattern on the mask blank, a semi-shielding film as a mask by etching the exposed resist pattern, to to obtain a predetermined transmittance, a light shielding portion formed of a pattern corresponding to the source and drain electrodes on a transparent substrate; the semi-transparent portion pattern forming step of forming a resist pattern in a region including at least part of the channel, by this resist pattern as the light-shielding film after further etching the exposed half-etching mask, forming a semi-transmissive portion corresponding to the channel portion.

即,与方案3相同,由于是在上述遮光部图案形成工序之后进行半透光部图案形成工序,因此与方案3相同,可以防止由于第2次光刻工序中的描绘时的对准偏差等的影响而造成质量变差,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 That is, the same as the embodiment 3, since the semi-light transmitting portion is the light shielding portion pattern after the patterning step of forming step, and thus the same as Scheme 3, can be prevented due to misalignment when the second photolithography step is depicted like caused by the influence of quality degradation, as a high pattern accuracy required for manufacturing the TFT substrate of the gray tone mask, to ensure sufficient quality.

根据方案6,在TFT基板的制造工序中使用的、由遮光部形成与TFT基板的源极和漏极对应的图案并由半透光部形成与源极和漏极间的沟道部对应的图案的灰调掩模的制造方法中,首先,准备至少形成了遮光膜的掩模坯,在该掩模坯上形成与上述源极和漏极对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,首先在透明基板上形成用于形成遮光部的遮光部图案,其次,在形成了上述遮光部的透明基板上形成半透光膜;在至少包含与上述沟道部对应的图案的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成半透光部和透光部。 6, used in the manufacturing process of the TFT substrate, the light shielding portion is formed by the solution according to a pattern corresponding to the drain electrode and the semi-transparent portion is formed by the source of the TFT substrate and the source and the drain corresponding to the channel portion between the the method of manufacturing a gray-tone mask pattern, first, a mask blank prepared at least a light-shielding film is formed, the resist pattern formation region and the source and the drain of the corresponding blank on the mask, by the anti- etching the light shielding film pattern as a mask for etching the exposed first formed on a transparent substrate, a light shielding pattern portion for forming a light-shielding portion, secondly, in the form of a semitransparent film formed on the transparent substrate, the light shielding portion; and at least comprising region of the channel portion corresponding to the pattern formed in the resist pattern by the resist pattern as a mask to etch the exposed semipermeable film, semi-transparent portion is formed and a light transmissive portion.

即,不是利用半透光膜和遮光膜的层叠结构的掩模坯,而是首先利用仅形成了遮光膜的掩模坯来形成与源极和漏极对应的遮光部图案,因此可在该时间点决定源极和漏极的位置,其次,进行半透光膜的成膜、蚀刻,由于与方案3相同,是在上述遮光部图案形成工序之后进行半透光部图案形成工序,因此与方案3相同,可以防止由于第2次光刻工序中的描绘时的对准偏差等的影响而造成质量变差,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 That is, instead of using a semitransparent film and the light-shielding film mask blank of the laminated structure, but using only the first light shielding film formed of the mask blank to form the source and drain electrode patterns corresponding to the light shielding portion, it can be in the determines the position of the time point of the source and drain, Secondly, a semitransparent film deposition, etching, and the same as scheme 3, is semi-transparent portion forming step is carried out after said light shielding pattern portion pattern forming step, and thus the same scheme 3, can be prevented due to misalignment or the like when the second photolithography step is depicted caused quality deterioration, a high pattern accuracy is required for manufacturing the TFT substrate of the gray tone mask, it may be good enough to ensure the quality of.

根据方案7,由于在上述掩模坯的半透光膜和遮光膜之间设置缓冲膜,该缓冲膜具有在通过蚀刻来除去遮光膜时保护半透光膜的所谓蚀刻阻止剂的功能,因此在第1次光刻工序中,当通过蚀刻来除去没有形成抗蚀图案的区域的遮光膜时,可以防止下层的半透光膜的膜减少等损害。 According to Scheme 7, since the buffer film between the mask blank of a semitransparent film and the light shielding film, the buffer film has a function of a so-called etching stop semitransparent film protective agent in the light-shielding film is removed by etching, so in the first photolithography process, when the light-shielding film region is removed resist pattern is not formed by etching the underlayer film can be prevented semipermeable membrane damage and reduction. 并且,为了在成为半透光部的区域中不损害下层的半透光膜的透过率,通常最好除去缓冲膜,但根据缓冲膜材质的不同,在透明度很高而即使不除去也不会损害半透光部的透过性的情况下,也可以保留缓冲膜。 Further, in order not to damage the permeability of the semipermeable film is in the region of the lower layer becomes semi-transparent portion, it is generally preferred to remove the buffer film, the buffer film but depending on the materials, but without the high transparency is not removed case impair the permeability of the semi-transparent portion, the buffer film can be retained.

根据方案8,上述灰调掩模具有遮光部与半透光部的相邻部,上述半透光部图案形成工序在上述遮光部与半透光部的相邻部,采用比在遮光部侧至少附加了希望的边缘区域后的半透光部所对应的区域大的半透光膜形成用的抗蚀图案,进行蚀刻加工。 According to Scheme 8, the above-described gray-tone mask has a light shielding portion and the adjacent portion of the semi-transparent portion of the semi-transparent portion in the step of patterning the light-shielding portion and the adjacent portion of the semi-transparent portion, the light blocking portion side than the use of a resist pattern with at least one additional semi-transparent portion of the rear edge region corresponding to a desired semitransparent film formed in a large area, by etching.

当在第1次描绘形成的遮光部图案的希望的开口部中形成半透光部图案时,通过考虑位置偏差或对准偏差来形成在遮光部侧重叠的半透光部用的抗蚀图案,即使在多少产生了位置偏差或对准偏差时,也可以防止损害半透光部图案的位置精度。 When the opening portion of a desired portion of the light shielding pattern formed in the 1st depicted semi-transparent portion formed in a pattern to form a light shielding portion overlapping the side portions of the semi-transparent resist pattern by taking into account a positional deviation or misalignment , even when a positional deviation is generated, or how much the misalignment, can be prevented damage to the positional accuracy of the semi-transparent portion pattern. 根据本方法,由于可高精度形成例如TFT特性上的重要的图案,因此可提供高质量的灰调掩模。 According to this method, since high precision pattern formation is important, for example, TFT characteristics, thus providing high-quality gray-tone mask. 这样,本发明特别适合于制造要求高图案精度的TFT基板制造用的灰调掩模。 Thus, the present invention is particularly suitable for producing high pattern accuracy is required for manufacturing the TFT substrate of the gray-tone mask.

根据方案9,由于采用比至少将希望的边缘区域附加到与沟道部对应的区域后的沟道部所对应的区域大的半透光膜形成用的抗蚀图案,因此即使在多少产生了位置偏差或对准偏差时,也可以防止沟道部的间隙的半透光部图案的位置精度被损害,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 According to Scheme 9, since the resist pattern is formed over at least a portion of the channel region of the desired edge region attached to a portion corresponding to the channel corresponding to a large area with a semitransparent film, even if the number generated when the positional deviation or misalignment, can be prevented the positional accuracy of the pattern of the semi-transparent portion of the channel gap is impaired, as a high pattern accuracy required for manufacturing the TFT substrate gray tone mask can be ensured sufficiently good quality .

根据方案10,由上述遮光部、透光部和半透光部构成的图案是为了在利用上述灰调掩模进行曝光的被处理体上得到下述掩模层的图案,该掩模层用于通过使对被处理体中的感光性材料层的曝光量,在上述遮光部、透光部和半透光部中分别不同,而对由不同膜厚的感光性材料层构成的被处理体进行处理。 According to Scheme 10, a pattern made of the light shielding portion, and the light transmitting portion is semi-transparent in order to obtain a pattern portion following the mask layer on the treated material is exposed using the gray-tone mask, the mask layer by exposure to a photosensitive material layer is processed in a respectively different in the light shielding portion, the light-transmitting portion and the semi-transparent portion, and the object to be processed comprising a photosensitive material layer of different thickness for processing. 对具有这样的图案的灰调掩模,可以合适地利用方案1~6的制造方法。 Of gray-tone mask has a pattern, the manufacturing method of Scheme 1 to 6 can be suitably used.

根据方案11,在薄膜晶体管基板制造工序中使用的灰调掩模具有遮光部、透光部和半透光部;并由上述遮光部形成与上述薄膜晶体管基板的源极和漏极对应的图案;由上述半透光部形成与沟道部对应的图案;在该灰调掩模中,在上述沟道部中,形成将希望的边缘区域附加到与沟道部对应的区域后的稍微大一些的半透光膜。 According to Scheme 11, gray tone mask used in a manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portion; the light shielding portion is formed by the source and drain of the thin film transistor substrate in a pattern corresponding ; with the channel portion corresponding to a pattern formed by the semi-transparent portion; the gray tone mask, the portion of the channel is formed slightly larger the desired edge region attached to the portion corresponding to the channel region of the Some of the semi-permeable film.

即,即使在多少产生了位置偏差或对准偏差时,也可以防止沟道部的间隙的半透光部图案的位置精度被损害,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 That is, even when a positional deviation is generated, or how much the misalignment, can be prevented the positional accuracy of the pattern of the semi-transparent portion of the gap portion of the channel is impaired, as a high pattern accuracy required for manufacturing the TFT substrate of the gray-tone mask can ensure sufficient quality.

附图说明 BRIEF DESCRIPTION

图1是表示TFT基板制造用的掩模图案的一例的图。 FIG 1 is a diagram illustrating an example of a mask pattern used for manufacturing the TFT substrate.

图2是按工序顺序表示与本发明的第1实施方式有关的制造方法的概略剖面图。 FIG 2 is a schematic sectional view showing a sequence of steps showing a manufacturing method of the first embodiment of the present invention related to embodiment.

图3是表示本发明的第1实施方式的部分工序的平面图。 FIG 3 is a plan view showing part of the process according to the first embodiment of the present invention.

图4是用于说明把与半透光部对应的抗蚀图案形成得稍大一些的实施方式的概略平面图。 FIG 4 is a semi-transmissive portion corresponding to the resist pattern is formed to be slightly larger embodiments schematic plan view for explaining an embodiment.

图5是按工序顺序表示与本发明的第2实施方式有关的制造方法的概略剖面图。 FIG 5 is a schematic sectional view showing a sequence of steps showing a manufacturing method of the second embodiment of the present invention related to embodiment.

图6是按工序顺序表示与本发明的第3实施方式有关的制造方法的概略剖面图。 FIG 6 is a schematic sectional view showing a sequence of steps illustrating a manufacturing method of the third embodiment of the present invention related to embodiment.

图7是按工序顺序表示与本发明的第3实施方式有关的制造方法的概略剖面图。 FIG 7 is a schematic sectional view showing a sequence of steps illustrating a manufacturing method of the third embodiment of the present invention related to embodiment.

图8是表示本发明的第3实施方式中的灰调掩模的一例的平面图和概略剖面图。 FIG 8 is a plan view and a schematic sectional view of a gray-tone mask according to a third embodiment of the present invention.

图9是表示本发明的第3实施方式中的灰调掩模的一例的概略剖面图。 FIG 9 is a schematic sectional view showing an example of the gray-tone mask according to a third embodiment of the present invention.

图10是表示使用灰调掩模的TFT基板的制造工序的概略剖面图。 FIG 10 is a schematic sectional view showing a manufacturing process of a TFT substrate using a gray tone mask.

图11是表示使用灰调掩模的TFT基板的制造工序的概略剖面图(图10的制造工序的后续工序)。 FIG 11 is a schematic sectional view showing a manufacturing process of a TFT substrate using a gray-tone mask (manufacturing step subsequent to the step of FIG. 10).

图12是表示微细图案类型的灰调掩模的一例的图。 FIG 12 is a diagram showing an example of a fine pattern type gray tone mask.

图13是用于说明以往的灰调掩模的制造方法的概略平面图。 FIG 13 is a schematic plan view showing a conventional method of manufacturing a gray-tone mask. FIG.

图14是用于说明利用以往的制造方法制造的灰调掩模的问题的概略平面图。 FIG 14 is a schematic plan view for explaining problems of a conventional gray-tone mask manufactured by the method.

符号说明10:灰调掩模;20:灰调掩模;21:透明基板;22:半透光膜;23:遮光膜;24:抗蚀膜;25:缓冲膜;100:TFT基板用图案;101:遮光部;102:透光部;103:半透光部。 DESCRIPTION OF REFERENCE NUMERALS 10: gray-tone mask; 20: gray-tone mask; 21: a transparent substrate; 22: semitransparent film; 23: light-shielding film; 24: resist film; 25: buffer film; 100: TFT substrate pattern ; 101: light-shielding portion; 102: transmissive portion; 103: semi-transparent portion.

具体实施方式 Detailed ways

以下,通过实施方式,对本发明进行详细说明。 Below, the present invention is described in detail by way of embodiments.

图2表示与本发明有关的灰调掩模的制造方法的第1实施方式,是按顺序示出该制造工序的概略剖面图。 2 shows a gray-tone mask related to the present invention, a first embodiment of a method of manufacturing a schematic cross-sectional view sequentially illustrating the manufacturing process of FIG.

并且,在本实施方式中,把形成上述图1所示的TFT基板用图案100的情况,作为例子进行说明。 Further, in the present embodiment, the TFT substrate is formed as shown in FIG. 1 with the above-described case of pattern 100 as an example will be described.

如图2(a)所示,在本实施方式中使用的掩模坯在石英等透明基板21上依次形成了半透光膜22和遮光膜23。 As shown in FIG 2 (a), the embodiment used in the present embodiment mask blank 22 are sequentially formed a semitransparent film 23 and the light-shielding film on a transparent substrate 21 such as quartz. 此处,作为遮光膜23的材质,优选能得到高遮光性的薄膜,例如可列举出Cr、Si、W、Al等。 Here, as the material of the light shielding film 23 is preferably a high light-shielding property can be obtained a thin film, for example, include Cr, Si, W, Al and the like. 此外,作为半透光膜22的材质,优选在将透光部的透过率设为100%时,能得到透过率约为50%程度的半透过性的薄膜,例如可列举出Cr化合物(Cr氧化物、氮化物、氧氮化物、氟化物等)、MoSi、Si、W、Al等。 Further, as a semitransparent film 22 of a material, preferably when the transmittance of the light-transmitting portion is 100%, the film can be obtained semitransparent transmittance of about 50% level, for example, include Cr compound (Cr oxides, nitrides, oxynitrides, fluorides, etc.), MoSi, Si, W, Al and the like. Si、W、Al等是根据膜厚可得到高遮光性或得到半透过性的材质。 Si, W, Al and the like to obtain the film thickness to obtain high light-shielding or semi-permeable material according to. 此外,由于所形成的掩模的遮光部是半透光膜22和遮光膜23的层叠,因此,即使遮光膜单独的遮光性不足,但只要与半透光膜组合起来可以得到遮光性即可。 Further, since the mask light shielding portion is formed by laminating a semitransparent film 22 and the light-shielding film 23, and therefore, even if the light shielding film shielding insufficient alone, but as long as it can be combined with a semipermeable film can be light-shielding . 并且,此处所谓的透过率指的是对使用灰调掩模的例如大型LCD用曝光机的曝光光波长的透过率。 And, the term transmittance herein refers to a transmittance of exposure light with a wavelength of, for example, large LCD exposure machine using a gray tone mask. 此外,完全没有必要把半透光膜的透过率限定在50%的程度。 Further, there is no need to define a semitransparent film transmittance at 50% level. 把半透光部的透过性设定到什么程度是设计上的问题。 The permeability of the semi-transparent portion is set to what extent a matter of design.

此外,关于上述遮光膜23和半透光膜22的材质的组合,要求膜相互之间的蚀刻特性必须不同,对于一个膜的蚀刻环境,另一个膜必须具有抵抗性。 Further, regarding the material composition of the light-shielding film 23 and the transflective film 22, the etching characteristics required between the film must be different from each other, the etching environment, a film, another film must have resistance. 例如,在用Cr形成遮光膜23,用MoSi形成半透光膜22的情况下,当利用氯类气体来干式蚀刻Cr遮光膜,或者利用使过氧盐与硝酸亚铈铵混合并稀释后的蚀刻液来湿式蚀刻Cr遮光膜时,由于在与衬底的MoSi半透光膜之间能得到很高的蚀刻选择比,因此可以几乎不对MoSi半透光膜造成损害,通过蚀刻只除去Cr遮光膜。 For example, after the light-shielding film 23 is formed in the Cr, the semitransparent film is formed with the case 22 of MoSi, when using a chlorine-based gas by the dry etching Cr light-shielding film, or with a mixture of ammonium salts of peroxy and diluted with cerium nitrate etching liquid when the Cr light-shielding film by wet etching, since the substrate between MoSi semitransparent film can be very high etching selection ratio, it is possible to cause almost no damage MoSi semitransparent film is removed by etching only Cr shading film. 进而,优选上述遮光膜23和半透光膜22在基板上成膜后具有良好的密合性。 Further, preferably the light shielding film 23 and the transflective film 22 with good adhesion to the substrate after the film formation.

上述掩模坯可以通过在透明基板21上依次对半透光膜22和遮光膜23进行成膜而得到,成膜方法可以选择蒸镀法、溅射法、CVD(化学气相沉积)法等适合于膜的种类的方法。 The mask blank 21 may be sequentially passed over the semipermeable membrane 23 and the light shielding film 22 for forming the transparent substrate obtained, a film forming method may be selected deposition, sputtering, CVD (chemical vapor deposition) method or the like for on the type of film method. 此外,关于膜厚没有特别的限制,只要以能得到良好的遮光性或半透光性的最佳的膜厚来形成即可。 Further, the film thickness is not particularly limited, as long as good can be obtained optimum film thickness of the shielding or semi-transparent can be formed.

其次,对利用该掩模坯的灰调掩模的制造工序进行说明。 Next, using the mask blank manufacturing process of the gray-tone mask will be described.

首先,在该掩模坯上涂覆例如电子射线或激光描绘用的正性抗蚀剂,进行烘焙,形成抗蚀膜24。 First, in the mask blank coated with a positive resist such as an electron beam or a laser drawing, the baking, the resist film 24 is formed. 其次,利用电子射线描绘机或激光描绘机进行描绘。 Then, an electron beam drawing machine or a laser drawing machine drawing. 描绘数据是与图1所示的源/漏极图案101a、101b对应的遮光部101的图案数据。 A drawing data 101a, 101b corresponding to the light shielding portion pattern data and the source / drain pattern 101 shown in FIG. 描绘后,对其进行显影,在掩模坯上形成与遮光部对应的抗蚀图案24a(参考图2(b))。 After drawing, its development, the light-shielding portion is formed corresponding to the resist pattern 24a (refer to FIG. 2 (b)) on the mask blank.

其次,将形成的抗蚀图案24a作为掩模,来干式蚀刻遮光膜23,形成与遮光部对应的图案23a、23b(参考图2(c))。 Next, a resist pattern 24a is formed as a mask, dry etching the light-shielding film 23 is formed with a pattern corresponding to the light shielding portions 23a, 23b (refer to FIG. 2 (c)). 当遮光膜23由Cr系材料构成时,可以采用利用氯气的干式蚀刻。 When the light-shielding film 23 is made of Cr-based material, dry etching using a chlorine gas may be employed. 与遮光部对应的区域以外的区域,通过遮光膜23的蚀刻,成为使衬底的半透光膜22露出的状态。 And the region other than the region corresponding to the light shielding portion by etching the light-shielding film 23, a semitransparent film 22 in a state that the substrate is exposed. 残留的抗蚀图案24a可利用氧灰化法或浓硫酸等除去。 The remaining resist pattern 24a can be removed by oxygen ashing method or a sulfuric acid.

图3(1)是对应的平面图,在图2(c)中示出沿其II线的剖面。 Figure 3 (a) is a plan view corresponding to the cross section shown along the line II in FIG. 2 (c) of. 观察图3(1)可知,通过以上说明过的第1次光刻工序,形成与TFT基板的源极和漏极对应的遮光部图案23a、23b,在该时间点,虽然没有描绘半透光部和透光部,但源极和漏极间的沟道部的间隙以及与遮光部的位置关系通过一次描绘便可以一次得到。 Observation FIG. 3 (a) shows, the above described first photolithography process, forming a source electrode of the TFT substrate and the light shielding pattern portion corresponding to the drain 23a, 23b, at this time point, although not depicted semi-transparent light transmitting portions and portions, but the positional relationship between the gap of the channel portion between the source and drain electrodes and the light shielding portion by a single drawing can once obtained. 因此,可以用一次描绘来确保与TFT特性上重要的沟道部对应的图案的位置精度。 Thus, a drawing can be used to ensure the positional accuracy of the channel portion corresponding to an important pattern on TFT characteristics.

其次,再次在整个面上涂覆上述抗蚀剂,形成抗蚀膜。 Secondly, again the entire surface of the resist coating, the resist film is formed. 进而,进行第2次描绘。 Further, the 2nd drawing. 此时的描绘数据是至少包含与图1所示的源极和漏极间的沟道部对应的半透光部103的图案数据。 At this time, the drawing data containing at least the pattern data corresponding to the channel portion between the source and drain in FIG. 1 semi-transparent portion 103. 描绘后,对其进行显影,形成至少与半透光部对应的抗蚀图案24b(参考图2(d))。 After drawing, be developed to form at least a semi-transparent portion corresponding to the resist pattern 24b (refer to FIG. 2 (d)).

其次,将形成的抗蚀图案24b作为掩模,通过干式蚀刻,除去成为透光部的区域的半透光膜22。 Next, the resist pattern 24b is formed as a mask by dry etching, removing the film 22 to become semi-light transmitting portion of the region. 从而,半透光部被描绘为透光部,形成半透光部和透光部(参考图2(e))。 Accordingly, the semi-transparent portion is depicted as a translucent portion, and the light transmitting portion is formed semi-transparent portion (refer to FIG. 2 (e)). 此处,虽然在遮光膜图案23a、23b上没有形成抗蚀图案,但在本实施方式中,由于使用的掩模坯的遮光膜23和半透光膜22以蚀刻特性相互不同的材质来形成,因此在蚀刻半透光膜22的环境下,遮光膜几乎不会被蚀刻。 Here, although the light shielding film pattern 23a, is not formed on the resist pattern 23b, in the present embodiment, since the light-shielding film using the mask blank 23 and the semitransparent film 22 at mutually different etching characteristics of materials formed Therefore at ambient semitransparent film 22 is etched, the light-shielding film is hardly etched. 此时,遮光膜图案23a、23b成为蚀刻掩模(抗蚀剂),半透光膜22被蚀刻。 At this time, the light shielding film pattern 23a, 23b become the etching mask (resist), a semitransparent film 22 is etched. 但是,为了可靠地防止遮光膜被损坏,也可以将上述抗蚀图案24b形成在包含遮光膜图案23a、23b的区域中。 However, in order to reliably prevent the light-shielding film is damaged, the resist pattern 24b may be formed in the region 23a, 23b comprises a light shielding film pattern. 并且,利用氧灰化法等除去残留的抗蚀图案。 Then, the remaining resist pattern is removed by oxygen ashing method or the like.

如上所述,完成本实施方式的灰调掩模20。 As described above, the present embodiment is completed 20 gray tone mask. 图3(2)是该掩模的平面图,沿该II线的剖面与图2(e)对应。 FIG 3 (2) is a plan view of the mask, corresponding to the cross section along the line II in FIG. 2 (e). 所得到的掩模具有与图1所示的TFT基板用图案的源极和漏极图案101a、101b对应的遮光膜图案23a、23b以及与沟道部103对应的半透光膜图案22a,其周边露出透明基板21来形成透光部21。 The resulting mask has a TFT substrate shown in FIG. 1 with the pattern of the source and drain patterns 101a, 101b corresponding to the light shielding film pattern 23a, 103 corresponding to the channel portion 23b, and a semitransparent film pattern 22a, which 21 is exposed to the periphery of the transparent substrate 21 is formed the light-transmitting portion. 根据本发明的方法,由于能够高精度形成例如TFT特性上的重要的图案,因此可提供高质量的灰调掩模。 The method according to the present invention, since, for example, can be formed with high accuracy on a pattern important TFT characteristics, thus providing high-quality gray-tone mask. 这样,本发明特别适合于制造要求高图案精度的TFT基板制造用的灰调掩模。 Thus, the present invention is particularly suitable for producing high pattern accuracy is required for manufacturing the TFT substrate of the gray-tone mask.

并且,在上述实施方式中,在为了形成透光部的第2次光刻工序中,在形成抗蚀膜后进行描绘时,也可以把描绘区域中设定比必要的尺寸稍微大一些的边缘区域(例如0.1~1μm的程度)来进行描绘。 In the above embodiment, in order to form the second portion of the light transmitting sub-lithographic process, when the resist film is performed after forming the drawing, the drawing region may be set slightly larger than the size of the necessary edge region (e.g., the extent of 0.1 ~ 1μm) for representation. 即,由于TFT基板制造用的灰调掩模一般是在大型基板(例如一边或短边是300mm以上的正方形或长方形基板)上,重复形成与TFT基板的像素图案对应的由希望的遮光部、透光部和半透光部构成的单位图案,因此描绘精度在平面内发生偏差(面内分布)的可能性很高。 That is, since the gray tone mask for manufacturing the TFT substrate is typically on large substrates (e.g., one side or the short side of 300mm or more square or rectangular substrate), is formed by repeating a desired light shielding pattern portion of the pixel corresponding to the TFT substrate, unit pattern and the light-transmitting portion formed of semi-transparent portion, and therefore a high possibility that depicts the variation (in-plane distribution) occurs in the plane accuracy. 此外,也必须考虑重复描绘时的对准精度的限度。 In addition, limit the alignment accuracy must also be considered when drawing repeated. 虽然必须在覆盖了第1次描绘时就被高精度定位的半透光部的区域中形成抗蚀图案24b,但即使在第2次描绘中存在位置偏差或对准偏差时,也可以为了确保半透光部的图案精度,而象例如如图4(1)所示的那样设定描绘区域:在图示形成沟道部的半透光部的X和Y方向上,附加考虑描绘精度和对准精度而决定的边缘区域,使其形成分别覆盖稍大一点(宽度大)区域的抗蚀图案24b。 Although the semi-transparent portion of the region must be accurately positioned on the cover when the first time is formed in the resist pattern depicted 24b, but even at the 2nd position depicted in presence of misalignment or offset, may be in order to ensure semi-transparent portion pattern accuracy, but as the drawing area is set for example, as shown in FIG. 4 (1): X and Y directions in the semi-transparent portion of a channel portion is shown formed, additional considerations and drawing accuracy alignment accuracy is determined edge regions, are formed so as to cover slightly larger (large width) of the resist pattern area 24b.

在此情况下,当进行露出的半透光膜22的蚀刻,除去抗蚀图案24b时,如图4(2)所示,虽然半透光膜图案22a在图示的X和Y方向以稍微突出的状态形成,但是由于遮光部按设计图案形成,半透光部的沟道部的间隙也按设计形成,因此利用该掩模制造的TFT在特性上完全没有问题。 In this case, when etching a semitransparent film 22 is exposed when removing the resist pattern 24b, as shown in FIG. 4 (2), while the semitransparent film pattern 22a in the X and Y directions shown in a slightly projections formed in a state, but since the light-shielding portion is formed by the designs, the gap of the channel portion of the semi-transparent portion is also formed as designed, and therefore the mask using a TFT fabricated on the characteristics of no problem.

图5表示与本发明有关的灰调掩模的制造方法的第2实施方式,是按顺序表示该制造工序的概略剖面图。 5 shows a gray-tone mask of the present invention is related to a second embodiment of the method of manufacturing is a schematic sectional view sequentially showing the manufacturing process of FIG.

如图5(a)所示,在本实施方式中使用的掩模坯在透明基板21上依次形成了半透光膜22、缓冲膜25以及遮光膜23。 FIG 5 (a), the embodiment used in the present embodiment mask blank 22 are sequentially formed a semitransparent film, the buffer film 25 and the light-shielding film 23 on the transparent substrate 21. 即,由于在半透光膜22与遮光膜23之间设置了具有作为蚀刻阻止剂功能的缓冲膜25,因此在第1次光刻工序中,当通过蚀刻来除去未形成抗蚀图案区域的遮光膜时,可以防止下层的半透光膜的膜减少等损害。 That is, since the semitransparent film 22 is provided between the light-shielding film 23 and the buffer film having as an etching inhibitor function 25, and therefore in the first photolithography process, when the resist pattern is removed by etching is not formed in the region when the light-shielding film, the lower film can be prevented semipermeable membrane damage and reduction. 由于这样设有缓冲膜,因此遮光膜23和半透光膜22可由蚀刻特性相似的材质、例如由相同材料的膜或主要成分相同的材料的膜来构成。 Since such a buffer film is provided, and therefore the light shielding film 23 and the transflective film 22 by etching characteristics similar material such as a film or a main component of the same material of the same membrane material constructed. 并且,缓冲膜的材质可从对蚀刻遮光膜23的环境具有抵抗性的材质中选择。 Further, the buffer film material may be selected from a material having resistance to environmental etching the light-shielding film 23. 此外,当有必要除去半透光部中的缓冲膜时,还要求其是用干式蚀刻等方法能够除去并不会对衬底的半透光膜22造成损害的材质。 Further, when the buffer film is removed in the semi-transparent portion it is necessary, but also requires a semitransparent film which is capable of removing the substrate 22 will not cause damage to the material by dry etching or the like. 作为缓冲膜,例如可以采用SiO2或SOG(Spin On Glass:旋涂式玻璃)等。 As the buffer film, or SiO2 may be employed, for example, SOG (Spin On Glass: a spin-on glass) and the like. 这些材质在用Cr系材料构成遮光膜时,与遮光膜之间可以取较高的选择比。 When these materials constituting a Cr-based light-shielding film material, and between the light-shielding film may take a higher selectivity. 此外,这些材质具有良好的透过性,即使留在半透光部上也不会损害其透过特性,因此也可不除去。 In addition, these materials have good permeability, which transmission characteristics are not impaired even if left on the semi-transparent portion, and therefore may not be removed.

利用这样的掩模坯制造灰调掩模的方法与上述第1实施方式相同。 With such a mask blank gray tone mask in the method for producing the above-described first embodiment.

即,首先在掩模坯上形成抗蚀膜24,进行规定的描绘、显影,在与透光部对应的区域形成抗蚀图案24a(参考图5(a)、(b))。 That is, the resist film 24 is first formed on the mask blank, for drawing a predetermined developing, a resist pattern 24a (refer to FIG. 5 (a), (b)) in a region corresponding to the transmissive portion.

其次,将该抗蚀图案24a作为掩模,来干式蚀刻露出的遮光膜23,形成与遮光部对应的图案23a、23b。 Next, the resist pattern 24a as a mask, dry etching is exposed to the light-shielding film 23 is formed with a pattern corresponding to the light shielding portion 23a, 23b. 继而,干式蚀刻露出的缓冲膜25,形成图案25a、25b(参考图5(c))。 Then, dry etching the buffer film 25 is exposed, to form a pattern 25a, 25b (refer to FIG. 5 (c)). 并且,用氧灰化法等方法除去残留的抗蚀图案24a,但也可以在蚀刻上述遮光膜23之后的阶段中除去。 Further, the method for removing residual oxygen ashing method, the resist pattern 24a, but may be removed at the stage after the above-described light-shielding film 23 is etched. 由于遮光膜23和缓冲膜25的蚀刻特性不同,因此可将所形成的遮光膜图案23a、23b作为蚀刻掩模,来蚀刻缓冲膜25。 Since the buffer film 25 and the etching characteristics different from the light-shielding film 23, and therefore the light shielding film pattern can be formed by 23a, 23b as an etching mask, the buffer film 25 is etched.

其次,再次形成抗蚀膜,进行规定的描绘和显影,在与半透光部和遮光部对应的区域形成抗蚀图案24c(参考图5(d))。 Next, a resist film is formed again, and for drawing a predetermined development to form a resist pattern 24c (refer to FIG. 5 (d)) in the region of the semi-transmissive portion and the shielding portion corresponding. 并且,在遮光膜23和半透光膜22的蚀刻特性相似的情况下,由于在下一次蚀刻半透光膜22时,遮光膜图案23a、23b会受到损害,因此在与遮光部对应的区域中也必须形成抗蚀图案24c。 Further, in the etching characteristics similar to the light-shielding film 23 and the transflective film 22 of the case, since the next etching semitransparent film 22, the light shielding film pattern 23a, 23b may be damaged, and thus the light-shielding portion corresponding to the region in It must also form a resist pattern 24c.

其次,将该抗蚀图案24c作为掩模,通过干式蚀刻除去露出的半透光膜22,形成透明基板21露出的透光部。 Next, the resist pattern 24c as a mask was removed by dry etching to expose the semitransparent film 22, the light-transmitting portion is formed of a transparent substrate 21 is exposed. 通过氧灰化法等除去残留的抗蚀图案24c。 Through an oxygen ashing method or the like to remove the remaining resist pattern 24c.

这样,如图5(e)所示,可得到分别以高图案精度形成了由遮光膜图案23a、23b构成的遮光部、由半透光膜图案22a构成的半透光部以及透光部的本实施方式的灰调掩模20A。 Thus, in FIG. 5 (e), the pattern accuracy can be obtained, respectively, is formed with a high light-shielding portion formed of a light shielding film pattern 23a, 23b, and a semi-transparent portion pattern light transmitting portion by a semipermeable film 22a constituted gray-tone mask of the present embodiment 20A.

图6表示与本发明有关的灰调掩模的制造方法的第3实施方式,是按顺序表示该制造工序的概略剖面图。 FIG. 6 shows a third embodiment of a method of manufacturing a gray-tone mask with the present invention, and is a schematic sectional view sequentially showing the manufacturing process of FIG.

如图6(a)所示,在本实施方式中使用的掩模坯在透明基板21上依次形成了遮光膜23。 FIG 6 (a), the embodiment used in the present embodiment a mask blank light-shielding film 23 are sequentially formed on a transparent substrate 21. 从而,利用蚀刻使遮光膜的局部膜厚不同,把膜厚较厚的部分作为遮光部,把膜厚较薄的部分作为半透光部。 Thus, different light-shielding film by etching local thickness, the large thickness portion as the light-shielding portion, the thickness of the thin portion as part of the semi-transparent. 对该情况下的遮光膜23的材质没有特别的限制,但如果是由于遮光性高而可得到透过率大约为0%的膜厚较薄的材质,则很难对其进行局部进行半蚀刻来形成半透光部。 Material of the light shielding film 23 in the case is not particularly limited, but if it is due to the high light-shielding property and to obtain transmittance of about 0% of a material having a small thickness, it is difficult to be partially half-etching forming a semi-transparent portion. 此外,如果是由于遮光性不高而可得到透过率大约为0%的膜厚较厚的材质,则虽然比较容易进行半蚀刻,但由于遮光部图案的高度变厚,存在着图案形状或图案精度变差的可能。 Further, if it is not high due to the light-shielding property to obtain transmittance of about 0% of material of large thickness, while the half-etching is relatively easy, but since the height of the light shielding portions pattern is thickened, there is a pattern or shape pattern accuracy may be deteriorated. 从而,在本实施方式中,遮光膜23最好选择在1000~2000埃程度的膜厚范围内能得到良好遮光性和半透过性的材质。 Thus, in the present embodiment, the light shielding film 23 is preferably selected within the range of thickness of 1000 Å ~ 2000 degree and give good shielding of semi-permeable material.

利用这样的掩模坯制造灰调掩模的方法与上述第1实施方式相同。 With such a mask blank gray tone mask in the method for producing the above-described first embodiment.

即,首先在掩模坯上形成抗蚀膜24,进行规定的描绘、显影,在与遮光部对应的区域形成抗蚀图案24a(参考图6(a)、(b))。 That is, the resist film 24 is first formed on the mask blank, for drawing a predetermined developing, a resist pattern 24a (refer to FIG. 6 (a), (b)) in a region corresponding to the light shielding portion.

其次,将抗蚀图案24a作为掩模,来半蚀刻露出的遮光膜23,直到达到可得到半透光性的适当的厚度为止,形成与遮光部对应的图案23a、23b(参考图6(c))。 Next, the resist pattern 24a as a mask, etching the exposed semi-shielding film 23, until an appropriate thickness can be obtained until the semi-light-transmissive, 23a, 23b (refer to FIG. 6 (c formed corresponding to the light shielding pattern portion )). 并且,用氧灰化法等方法除去残留的抗蚀图案24a。 Then, the remaining resist pattern 24a is removed by oxygen ashing method or the like method.

其次,再次形成抗蚀膜,进行规定的描绘和显影,在包含半透光部和遮光部的区域形成抗蚀图案24c(参考图6(d))。 Next, a resist film is formed again, and for drawing a predetermined development to form a resist pattern 24c (refer to FIG. 6 (d)) in a region including a semi-transmissive portion and the shielding portion. 并且,在遮光膜图案23a、23b上也形成抗蚀图案24c,以便在下一次进一步蚀刻半蚀刻膜时,不损害遮光膜图案23a、23b。 Further, the light shielding film pattern 23a, 24c are also formed on the resist pattern 23b, so that when a next film is further etched half-etching, without impairing the light shielding film pattern 23a, 23b.

其次,将该抗蚀图案24c作为掩模,进一步通过干式蚀刻来除去露出的半蚀刻后的遮光膜23d,形成透明基板21露出的透光部。 Next, the resist pattern 24c as a mask, removing the light shielding film 23d is further exposed after half etching by dry etching to form the light-transmitting portion of the transparent substrate 21 is exposed. 通过氧灰化法等除去残留的抗蚀图案24c。 Through an oxygen ashing method or the like to remove the remaining resist pattern 24c.

这样,如图6(e)所示,可得到分别以高图案精度形成了由遮光膜图案23a、23b构成的遮光部、由通过半蚀刻得到的薄遮光膜图案23c构成的半透光部、以及透光部的本实施方式的灰调掩模20B。 Thus, in FIG. 6 (e) as shown, respectively, can be obtained with high pattern accuracy are formed 23a, 23b constituting the light-shielding portion, a semi-transparent portion 23c light shielding film pattern made of a thin by half-etching the light shielding film pattern obtained, 20B, and gray-tone mask of the present embodiment is a light-transmitting portion.

图7表示与本发明有关的灰调掩模的制造方法的第4实施方式,是按顺序表示该制造工序的概略剖面图。 7 shows a gray-tone mask of the present invention is related to a fourth embodiment of the method of manufacturing is a schematic sectional view sequentially showing the manufacturing process of FIG. 以下,对本实施方式的灰调掩模的制造工序进行说明。 Hereinafter, the manufacturing process of the gray-tone mask of the present embodiment will be described.

在本实施方式中,首先,如图7(a)所示,利用在透明基板21上形成了遮光膜23的掩模坯。 In the present embodiment, firstly, as shown in FIG 7 (a), the mask blank is formed using a light-shielding film 23 on the transparent substrate 21.

在该掩模坯上,涂覆例如激光或电子射线描绘用的正性抗蚀剂,进行烘焙,形成抗蚀膜24。 In the mask blank, a positive resist is coated e.g. a laser or an electron beam with the drawing, baking, the resist film 24 is formed. 其次,利用电子描绘机或激光描绘机进行描绘。 Secondly, the use of electronic drawing machine or a laser drawing machine drawing. 描绘数据是与图1所示的源/漏极图案101a、101b对应的遮光部101的图案数据。 A drawing data 101a, 101b corresponding to the light shielding portion pattern data and the source / drain pattern 101 shown in FIG. 描绘后,对其进行显影,在掩模坯上形成与遮光部对应的抗蚀图案24a(参考图7(b))。 After drawing, its development, the light-shielding portion is formed corresponding to the resist pattern 24a (refer to FIG. 7 (b)) on the mask blank.

其次,将形成的抗蚀图案24a作为掩模,来湿式或干式蚀刻遮光膜23,形成与遮光部对应的图案23a、23b(参考图7(c))。 Next, a resist pattern 24a is formed as a mask, wet or dry etching the light-shielding film 23 is formed with a pattern corresponding to the light shielding portions 23a, 23b (refer to FIG. 7 (c)). 当遮光膜23由Cr系材料构成时,湿式蚀刻中例如可以采用将过氧盐和硝酸亚铈铵混合并稀释的蚀刻液等,干式蚀刻中可利用含有Cl2+O2等氯类气体的干式蚀刻气体。 When the light-shielding film 23 is made of Cr-based material, for example, wet etching using an etching solution or the like may be mixed peroxy salts and ammonium cerium nitrate and dilution, using the dry etching may be dry Cl2 + O2 contain chlorine-based gas and the like etching gas. 残留的抗蚀图案24a可利用氧灰化或浓硫酸等除去。 The remaining resist pattern 24a can be removed by oxygen ashing or sulfuric acid.

其次,在整个面上形成半透光膜22(参考图7(d))。 Next, the entire surface of a semitransparent film 22 is formed (see FIG. 7 (d)). 其次,在半透光膜22上涂覆上述抗蚀剂,形成抗蚀膜。 Next, the semipermeable coated with the resist film 22, the resist film is formed. 进而,进行第2次描绘,此时的描绘数据是至少包含与图1所示的源极和漏极间的沟道部对应的半透光部103的图案数据。 Further, the 2nd drawing, drawing data in this case is a semi-transparent portion including at least the channel portion shown in FIG. 1 between the source and the drain of the corresponding pattern data 103. 描绘后,对其进行显影,形成至少与半透光部对应的抗蚀图案24b(参考图7(e))。 After drawing, be developed to form at least a semi-transparent portion corresponding to the resist pattern 24b (refer to FIG. 7 (e)).

其次,将形成的抗蚀图案24b作为掩模,通过湿式或干式蚀刻除去成为透光部的区域的半透光膜22。 Next, the resist pattern 24b as a mask formed by wet or dry etching becomes semitransparent film removed region 22 of the light transmitting portion. 在本实施方式中,由于遮光膜23和半透光膜22以蚀刻特性相互不同的材质来形成,因此在蚀刻半透光膜22的环境下,遮光膜几乎不被蚀刻。 In the present embodiment, since the light-shielding film 23 and the transflective film 22 to mutually different etching characteristics of the material formed, therefore the environment semipermeable film 22 is etched, the light-shielding film is hardly etched. 从而,半透光部被描绘为透光部,形成半透光部和透光部(参考图7(f))。 Accordingly, the semi-transparent portion is depicted as a translucent portion, and the light transmitting portion is formed semi-transparent portion (see FIG. 7 (f)). 此处,在遮光膜图案23a、23b上没有形成抗蚀图案,但由于在本实施方式中所使用掩模坯的遮光膜23和半透光膜22以蚀刻特性相互不同的材质来形成,因此在蚀刻半透光膜22的环境下,遮光膜几乎不被蚀刻。 Here, the light shielding film pattern 23a, 23b is not formed on the resist pattern, but because of a semitransparent film and 23 to 22 of mutually different etching characteristics of the light-shielding film material of a photomask blank used in this embodiment is formed, so at ambient semitransparent film 22 is etched, the light-shielding film is hardly etched. 并且,利用氧灰化法等除去残留的抗蚀图案。 Then, the remaining resist pattern is removed by oxygen ashing method or the like.

如上所述,可完成本实施方式的灰调掩模20C。 As described above, the present embodiment is completed gray-tone mask 20C. 由于根据本发明的方法,能够高精度地形成例如TFT特性上重要的图案,因此可提供高质量的灰调掩模。 Since the method of the present invention, for example, can be formed on the TFT important characteristic pattern with high precision, thus providing high-quality gray-tone mask. 这样,本发明特别适合于制造要求高图案精度的TFT基板制造用的灰调掩模。 Thus, the present invention is particularly suitable for producing high pattern accuracy is required for manufacturing the TFT substrate of the gray-tone mask.

此外,与图4相同,对抗蚀图案24b,也可以把描绘区域设定得比必要尺寸稍大一点来进行描绘。 Further, the same as in FIG. 4, the resist pattern 24b, may be the size of the drawing area is set slightly larger than necessary for representation. 虽然必须在覆盖了第1次描绘中就被高精度定位的半透光部的区域中形成抗蚀图案24b,但即使在第2次描绘中存在位置偏差或对准偏差时,也可以为了确保半透光部的图案精度,而象例如如图8(1)的平面图和图8(2)的沿图8(1)的AA'线的剖面图所示的那样,设定描绘区域:在图示形成沟道部的半透光部的X和Y方向上,附加考虑描绘精度和对准精度所决定的边缘区域26a和26b,以分别形成覆盖稍大一点区域(宽度大)的抗蚀图案24b。 Although the coverage must ensure that when drawing the first time the resist pattern 24b is formed on the region of the semi-transmissive portion positioned in high precision, but even at the 2nd position depicted in presence of misalignment or offset, in order to be semi-transparent portion pattern accuracy, as the example, as shown in cross section in FIG. 8 (1) of the line AA 'in FIG. 8 (1) a plan view and FIG. 8 (2) along the set drawing area: the formed on the X and Y directions shown semi-transparent portion of the channel portion, additional considerations drawing an edge region of the alignment accuracy and precision of the determined 26a and 26b, to form a slightly larger coverage area (large width) of the resist, respectively pattern 24b.

并且,为了可靠地防止遮光膜被损害,也可以将上述抗蚀图案24b形成在包含遮光膜图案23a、23b的区域,利用该抗蚀图案24b蚀刻半透光膜,在整个遮光膜上形成半透光膜(参考图9(1))。 Further, in order to reliably prevent the light-shielding film is damaged, may be the above-described resist patterns 24b comprising the light-shielding film pattern in the area 23a, 23b is formed by etching the resist pattern 24b semitransparent film is formed over the entire semi-light-shielding film transparent films (see FIG. 9 (a)). 在此情况下,在第2次描绘中存在位置偏差或对准偏差的情况下,由于在遮光部和透光部的边界部存在半透光膜突出的可能,因此在形成半透光膜时,最好除去考虑该描绘精度和对准精度所决定的边缘区域27a和27b(参考图9(2))。 In this case, in a case where the 2nd drawing present positional deviation or misalignment, since there may be a semitransparent film at the boundary of the projecting portion and the light transmitting portion of the light shielding portion, thus forming the semitransparent film , considered desirable to remove the edge region drawing accuracy and alignment accuracy determined 27a and 27b (refer to FIG. 9 (2)). 并且,当用半透光膜覆盖整个遮光膜时,遮光膜和半透光膜也可以采用蚀刻特性相互相同或类似的、遮光膜对于半透光膜的蚀刻没有抵抗性的材质。 Further, when the light-shielding film to cover the entire semi-permeable film, light-shielding film and semitransparent film etching characteristics may be used for the same or similar to each other, the light shielding film is not a material resistant to the etching of a semitransparent film.

如上面所详细说明的那样,根据本发明的灰调掩模的制造方法,即使在第2次光刻工序中进行描绘时存在对准偏差等,也可以防止由此引起的质量变差。 As explained above in detail, according to the method of manufacturing a gray-tone mask of the present invention, there is misalignment even when drawing in the second photolithography step and the like, can be prevented from deterioration in quality caused thereby. 从而,作为掩模可以确保足够好的质量,特别适合于制造对遮光部与半透光部的位置精度、或大小、尺寸等要求高图案精度的灰调掩模。 Accordingly, as a mask to ensure sufficient quality, particularly suitable for producing the positional accuracy of the light blocking portion and the semi-transparent portion, or the size, dimensions and other requirements of high pattern accuracy gray tone mask.

进而,根据本发明的灰调掩模的制造方法,由于可以高精度地形成对确保高质量的TFT特性特别重要的源极和漏极间的沟道部的图案,因此,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 Further, according to the method of manufacturing a gray-tone mask of the present invention, since the pattern can be accurately formed between the channel portion of the TFT characteristics to ensure the quality of particular importance source and the drain, therefore, the pattern of high accuracy as required the TFT substrate for producing gray-tone mask, to ensure sufficient quality.

进而,根据本发明的灰调掩模的制造方法,对确保高质量的TFT特性特别重要的源极和漏极间的沟道部的图案精度良好,作为要求高图案精度的TFT基板制造用的灰调掩模,可以确保足够好的质量。 Further, according to the method of manufacturing a gray-tone mask of the present invention, to ensure a high quality TFT characteristics especially important source and pattern accuracy of the channel portion between the drain well as a high pattern accuracy is required for manufacturing the TFT substrate gray-tone mask, to ensure sufficient quality.

Claims (11)

1.一种灰调掩模的制造方法,该灰调掩模是制造薄膜晶体管用的灰调掩模,其具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少依次形成了半透光膜和遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在半透光膜上形成遮光部;以及其后的半透光部图案形成工序:在至少包含所述半透光部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成半透光部和透光部,其中,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含 1. A method of manufacturing a gray-tone mask, the gray-tone mask is used for manufacturing a thin film transistor gray tone mask having a pattern of light-shielding portions, light-transmitting portion and the semi-transparent portion constituting a pattern having via the light shielding portion of the semi-transparent portion adjacent the portion, the manufacturing method comprising: a preparation step of: preparing a mask blank successively forming at least a semitransparent film and the light-shielding film on a transparent substrate, ; light-shielding portion pattern forming step: forming a resist pattern corresponding to the region of the light shielding portion on the mask blank through the resist pattern as a mask to etch the light-shielding film is exposed, in the semi-transparent film a light shielding portion; and a subsequent semi-transparent portion pattern forming step: a resist pattern is formed in a region including the at least semi-transparent portion by which the resist pattern as a mask to etch the exposed film semipermeable forming a light-transmitting portion and the semi-transparent portion, wherein said light shielding portion in the pattern forming step, the designated position of the light-shielding film via the semi-transparent portion formed in the semi-transparent portion pattern the resist pattern is used in the step comprising at least 被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Shielding portion sandwiched by the semi-transparent portion corresponding to the region, and larger than the area of ​​the resist pattern.
2.一种灰调掩模的制造方法,该灰调掩模是制造薄膜晶体管用的灰调掩模,其具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了具有透过率取决于膜厚的特性的遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述遮光部对应的区域的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻露出的遮光膜,使其为可得到规定透过率的膜厚,在基板上形成遮光部;以及其后的半透光部图案形成工序:在至少包含所述半透光部和遮光部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模,进一步蚀刻并除去露出的半蚀刻后的遮光膜,形成半透光部和透光部,其中,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所 2. A method of manufacturing a gray-tone mask, the gray-tone mask is used for manufacturing a thin film transistor gray tone mask having a pattern of light-shielding portions, light-transmitting portion and the semi-transparent portion constituting a pattern having via the light shielding portion of the semi-transparent portion adjacent the portion, the manufacturing method comprising: preparing the steps of: preparing a formed film thickness of the light-shielding having the transmittance characteristics depending on the transparent substrate at least mask blank film; a light-shielding portion pattern forming step of: forming a resist pattern area corresponding to the light shielding portion on the mask blank through the resist pattern as a mask the light-shielding film is exposed to half etching, so as to obtain a predetermined thickness of the transmittance, the light shielding portion is formed on a substrate; forming step and the subsequent semi-transparent portion pattern: forming a resist comprising said at least semi-transparent portion and light shielding portion in the region pattern by the resist pattern as a mask, the light-shielding film is further etched and removed after etching the exposed half, forming a light-transmitting portion and the semi-light transmitting portion, wherein, in the step of patterning the light-shielding portion, designated as the said light-shielding film interposed therebetween 半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 The position of the semi-transparent portion, the resist pattern is used in the semi-transparent portion pattern forming step comprises at least the semi-transmissive portion corresponding to the light shielding portion sandwiched region, and larger than the area The resist pattern.
3.一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,所述灰调掩模由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案;该制造方法具有在透明基板上形成由遮光部、透光部和半透光部构成的图案的工序,该制造方法的特征在于,形成所述图案的工序具有:遮光部图案形成工序:其包括在透明基板上形成用于形成遮光部的遮光部形成用的抗蚀图案,将该抗蚀图案作为掩模来蚀刻遮光膜的工序;半透光部图案形成工序:其包括在透明基板上形成用于至少形成半透光部的半透光部形成用的抗蚀图案,将该抗蚀图案作为掩模来蚀刻半透光膜的工序,其中,在所述遮 3. A method of manufacturing a gray-tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate, a pattern having a light-shielding portion, the light-transmitting portion and the semi-transparent portion constituting a pattern having said portion of the light shielding portion via the semi-transparent portion adjacent to the gray-tone mask of the thin film transistor substrate corresponding to the source and drain pattern is formed by the light blocking portion by the semipermeable light portion is formed a pattern corresponding to the channel portion; the manufacturing method includes a step of forming a pattern made from a shielding portion, the light-transmitting portion and the semi-transparent portion of the transparent substrate, which method is characterized in that said pattern is formed step: a step of patterning the light shielding portion: which comprises a light shielding portion for forming the light-shielding portion used for forming a resist pattern on a transparent substrate, and the resist pattern as a mask to etch the light shielding film step; semi-transparent portion patterning step: which comprises forming at least a semi-transparent portion for forming a semi-transparent portion of the resist pattern is formed on a transparent substrate by using the resist pattern as a mask to etch step semipermeable film, wherein, in the shutter 部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案,在所述遮光部图案形成工序之后,进行半透光部图案形成工序。 Portion patterning step, the designated position of the light-shielding film via the semi-transparent portion, the resist pattern is used in the step portion of the semi-transparent pattern is formed comprising at least a light-shielding portion sandwiched by the holding the portion corresponding to the semi-transparent region, and larger than the area of ​​the resist pattern after the step of patterning the light-shielding portion, a semi-transparent portion pattern forming step.
4.一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有由遮光部、透光部和半透光部构成的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该灰调掩模由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少依次形成了半透光膜和遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在半透光膜上形成由与源极和漏极对应的图案构成的遮光部;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成 4. A method of manufacturing a gray-tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate, a pattern having a light-shielding portion, the light-transmitting portion and the semi-transparent portion constituting a pattern having said portion of the light shielding portion via the semi-transparent portion adjacent to the gray tone mask formed with the thin film transistor substrate corresponding to the source and drain by the light shielding pattern portion by said semi-transparent portion of the channel portion is formed corresponding to a pattern, the manufacturing method comprising: a preparation step of: preparing a mask blank successively forming at least a semitransparent film and the light-shielding film on a transparent substrate; a step of patterning the light shielding portion: in forming a resist pattern and the source and drain electrodes corresponding to the pattern on the mask blank through the resist pattern as a mask to etch the light-shielding film is exposed, is formed by a semi-transparent film and the source electrode and the light-shielding portion constituting a pattern corresponding to the drain; and a subsequent semi-transparent portion pattern forming step: forming a resist pattern in the region of the channel comprises at least in part, is etched by the resist pattern as a mask semipermeable film is exposed, is formed 沟道部对应的半透光部,其中,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Semi-transparent portion corresponding to the channel portion, wherein said light shielding portion in the pattern forming step, the designated position of the light-shielding film via the semi-transparent portion, in the step of forming the semi-transparent portion pattern the resist pattern is used comprising at least a semi-transparent portion of the light shielding portion sandwiched corresponding region, and larger than the area of ​​the resist pattern.
5.一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了具有透过率取决于膜厚的特性的遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来半蚀刻露出的遮光膜,使其为可得到规定透过率的膜厚,形成由与源极和漏极对应的图案构成的遮光部;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模,进一步蚀刻 A method of manufacturing a gray-tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portions by the light shielding portion is formed by a source of said thin film transistor substrate and the drain of the corresponding pattern formed with a pattern corresponding to the channel portion by the semi-transparent portion, said pattern having the light-shielding portion via the semi-transparent portion adjacent to part, the manufacturing method comprising: preparing the steps of: preparing a formed mask blank having a light-shielding film depends on the thickness of the transmittance characteristics on a transparent substrate at least; light-shielding portion pattern forming step: the mask the resist pattern is formed on the mold material and the source and drain electrodes corresponding pattern by the resist pattern as a mask the light-shielding film is exposed to half etching, so as to obtain a predetermined thickness of transmittance, formed by the light shielding portions corresponding to the source and drain pattern configuration; and the subsequent step of forming semi-transparent portion pattern: a resist pattern is formed in a region including at least the portion of the channel in the resist pattern by as a mask, etching is further 除去露出的半蚀刻后的遮光膜,形成与沟道部对应的半透光部,其中,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Removing the light-shielding film is exposed after half etching, the semi-transparent portion is formed corresponding to the channel portion, wherein said light shielding portion in the pattern forming step, the light shielding film is delineated via the semi-transparent portion position, the resist pattern is used in the step with the resist pattern comprising at least the semi-transparent portion sandwiched between the shielding portion corresponding to the region, and larger than the area of ​​the semi-transparent portion formed in a pattern.
6.一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,所述图案具有所述遮光部隔着所述半透光部而相邻的部分,该制造方法的特征在于,具有:准备工序:准备在透明基板上至少形成了遮光膜的掩模坯;遮光部图案形成工序:在所述掩模坯上形成与所述源极和漏极对应的图案的抗蚀图案,通过将该抗蚀图案作为掩模来蚀刻露出的遮光膜,在透明基板上形成遮光部;其后的在形成了所述遮光部的透明基板上形成半透光膜的工序;以及其后的半透光部图案形成工序:在至少包含所述沟道部的区域中形成抗蚀图案,通过把该抗蚀图案作为掩模来蚀刻露出的半透光膜,形成半透光部 6. A method of manufacturing a gray-tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portions by the light shielding portion is formed by a source of said thin film transistor substrate and the drain of the corresponding pattern formed with a pattern corresponding to the channel portion by the semi-transparent portion, said pattern having the light-shielding portion via the semi-transparent portion adjacent to part, the manufacturing method comprising: preparing the steps of: preparing a mask blank is formed in the light shielding film at least on a transparent substrate; a light-shielding portion pattern forming step: forming the source and drain on the mask blank electrode pattern corresponding to the resist pattern by the resist pattern as a mask to etch the light-shielding film is exposed, the light shielding portion is formed on a transparent substrate; thereafter formed on the transparent substrate, the light shielding portion is formed semipermeable a step of film; and thereafter the semi-transparent portion pattern forming step: forming a resist pattern in a region including at least a portion of said channel, by which the resist pattern as a mask to etch the exposed film semipermeable , forming a semi-light transmitting portion 透光部,其中,在所述遮光部图案形成工序中,划定所述遮光膜中隔着所述半透光部的位置,在所述半透光部图案形成工序中使用的抗蚀图案为至少包含与被所述遮光部夹持的半透光部相对应的区域、且比该区域大的抗蚀图案。 Light transmitting portion, wherein, in the step of patterning the light-shielding portion, the light shielding film interposed therebetween designated position of the semi-transparent portion, the resist pattern used in said step of semi-transparent portion pattern forming comprising at least the semi-transparent portion of the shielding portion sandwiched between the corresponding region, and the area is larger than that of the resist pattern.
7.如权利要求1或4所述的灰调掩模的制造方法,其特征在于,在所述掩模坯的半透光膜和遮光膜之间设有缓冲膜,该缓冲膜用于在通过蚀刻来除去遮光膜时保护半透光膜。 The method for producing a gray-tone mask of claim 1 or claim 4, wherein the buffer film is provided between the mask blank of a semitransparent film and the light shielding film, the buffer film is used in when the protective film is removed semi-light-shielding film by etching.
8.如权利要求1至6中任何一项所述的灰调掩模的制造方法,其特征在于,所述灰调掩模具有遮光部与半透光部的相邻部,在所述半透光部图案形成工序中,作为用于形成与所述遮光部相邻的半透光部的半透光部形成用的抗蚀图案,采用将0.1~1μm宽度的边缘区域附加到遮光部侧之后的、比半透光部所对应的区域大的半透光部形成用的抗蚀图案。 1 to 6. 8. A method for manufacturing a gray-tone mask according to any one of the preceding claims, characterized in that the gray-tone mask has a light shielding portion and the adjacent portion of the semi-transparent portion, the half light transmitting portion patterning step, a semi-transparent portion for forming a semi-transparent portion adjacent to the light-shielding portion used for forming a resist pattern using a 0.1 ~ 1μm width of the edge area of ​​the light shielding portion is attached to the side after, the semi-transmissive region is larger than the corresponding portion of the semi-transparent portion for forming the resist pattern.
9.如权利要求3至6中任何一项所述的灰调掩模的制造方法,其特征在于,在所述半透光部图案形成工序中,作为用于形成与沟道部对应的半透光部的半透光部形成用的抗蚀图案,采用将0.1~1μm宽度的边缘区域附加到与沟道部对应的区域之后的、比沟道部所对应的区域大的半透光部形成用的抗蚀图案。 9. The method for manufacturing a gray-tone mask according to any one of claims 3-6, wherein, in the semi-transparent portion pattern forming step, as the corresponding half for forming the channel portion semi-transparent portion of the light transmitting portion is formed by the resist pattern, using the edge region of 0.1 ~ 1μm is appended to the width of the channel region and the portion corresponding to, greater than the corresponding region of the channel portion of the semi-transmissive portion forming a resist pattern used.
10.如权利要求1至6中任何一项所述的灰调掩模的制造方法,其特征在于,由所述遮光部、透光部和半透光部构成的图案是为了在使用所述灰调掩模进行曝光的被处理体上得到下述掩模层的图案,该掩模层用于通过使对被处理体中的感光性材料层的曝光量,在所述遮光部、透光部和半透光部中分别不同,对由不同膜厚的感光性材料层构成的被处理体进行处理。 10. The method of any of 1 to 6 for producing a gray tone mask claim, wherein the pattern composed of the light-shielding portion, the light-transmitting portion and the semi-transparent portion for use in the the following were obtained on a processing mask layer patterns of gray tone exposure mask, the mask layer by exposure for the photosensitive layer of the material to be processed is in the light shielding portion, the light-transmitting and a semi-transparent portion, respectively, different portions of the processed photosensitive material composed of a layer of different thickness is processed.
11.一种灰调掩模的制造方法,该灰调掩模在薄膜晶体管基板的制造工序中使用,它具有遮光部、透光部和半透光部,并由所述遮光部形成与所述薄膜晶体管基板的源极和漏极对应的图案,由所述半透光部形成与沟道部对应的图案,该制造方法的特征在于,在所述沟道部处形成有将0.1~1μm宽度的边缘区域附加到与沟道部对应的区域之后的、比沟道部所对应的区域大的半透光膜。 11. A method of manufacturing a gray-tone mask, gray tone mask used in the manufacturing process of the thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portions by the light shielding portion is formed by said source and drain electrodes corresponding to the pattern of the thin film transistor substrate, forming a pattern corresponding to the channel portion by the semi-transparent portion, characterized in that the manufacturing method is formed at a portion of the channel there will be 0.1 ~ 1μm the width of the edge region attached to a large portion of the channel than the region corresponding to the film after the semipermeable portion corresponding to the channel region.
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