US309627A
(en)
|
|
1884-12-23 |
|
johnson |
US430682A
(en)
|
|
1890-06-24 |
|
Door-check |
US465338A
(en)
|
|
1891-12-15 |
|
Sliding weather-strip for doors |
US723990A
(en)
|
1902-08-25 |
1903-03-31 |
Hermann Claassen |
Process of boiling sugar solutions.
|
US758100A
(en)
|
1904-01-16 |
1904-04-26 |
Imp Pneumatic Tool Company |
Handle for pneumatic tools.
|
US768195A
(en)
|
1904-03-25 |
1904-08-23 |
John J Quackenbush |
Shutter-fastener.
|
US809515A
(en)
|
1905-06-29 |
1906-01-09 |
Milton H Loudon |
Electrical railway signaling system.
|
JPS52130536A
(en)
|
1976-04-26 |
1977-11-01 |
Toshiba Corp |
Semiconductor memory unit
|
US4099069A
(en)
|
1976-10-08 |
1978-07-04 |
Westinghouse Electric Corp. |
Circuit producing a common clear signal for erasing selected arrays in a mnos memory system
|
US4398248A
(en)
|
1980-10-20 |
1983-08-09 |
Mcdonnell Douglas Corporation |
Adaptive WSI/MNOS solid state memory system
|
GB2020437B
(en)
*
|
1978-04-14 |
1982-08-04 |
Seiko Instr & Electronics |
Voltage detecting circuit
|
US4210959A
(en)
|
1978-05-10 |
1980-07-01 |
Apple Computer, Inc. |
Controller for magnetic disc, recorder, or the like
|
FR2426938A1
(fr)
|
1978-05-26 |
1979-12-21 |
Cii Honeywell Bull |
Dispositif de detection de secteurs defectueux et d'allocation de secteurs de remplacement dans une memoire a disques
|
JPS559260A
(en)
|
1978-07-03 |
1980-01-23 |
Nec Corp |
Information processing system
|
US4532590A
(en)
|
1980-04-25 |
1985-07-30 |
Data General Corporation |
Data processing system having a unique address translation unit
|
US4355376A
(en)
|
1980-09-30 |
1982-10-19 |
Burroughs Corporation |
Apparatus and method for utilizing partially defective memory devices
|
JPS5764383A
(en)
|
1980-10-03 |
1982-04-19 |
Toshiba Corp |
Address converting method and its device
|
JPS57132256A
(en)
|
1981-02-09 |
1982-08-16 |
Sony Corp |
Memory device
|
JPS5877034A
(ja)
|
1981-10-30 |
1983-05-10 |
Hitachi Ltd |
記録方法
|
US4473878A
(en)
|
1981-11-23 |
1984-09-25 |
Motorola, Inc. |
Memory management unit
|
US4476526A
(en)
|
1981-11-27 |
1984-10-09 |
Storage Technology Corporation |
Cache buffered memory subsystem
|
US4468730A
(en)
|
1981-11-27 |
1984-08-28 |
Storage Technology Corporation |
Detection of sequential data stream for improvements in cache data storage
|
US4450559A
(en)
|
1981-12-24 |
1984-05-22 |
International Business Machines Corporation |
Memory system with selective assignment of spare locations
|
US4498146A
(en)
|
1982-07-30 |
1985-02-05 |
At&T Bell Laboratories |
Management of defects in storage media
|
US4710871A
(en)
|
1982-11-01 |
1987-12-01 |
Ncr Corporation |
Data transmitting and receiving apparatus
|
US4609833A
(en)
|
1983-08-12 |
1986-09-02 |
Thomson Components-Mostek Corporation |
Simple NMOS voltage reference circuit
|
US4896262A
(en)
|
1984-02-24 |
1990-01-23 |
Kabushiki Kaisha Meidensha |
Emulation device for converting magnetic disc memory mode signal from computer into semiconductor memory access mode signal for semiconductor memory
|
JPS618798A
(ja)
|
1984-06-21 |
1986-01-16 |
Nec Corp |
不揮発性記憶装置
|
JPS6180597A
(ja)
|
1984-09-26 |
1986-04-24 |
Hitachi Ltd |
半導体記憶装置
|
US4654847A
(en)
|
1984-12-28 |
1987-03-31 |
International Business Machines |
Apparatus for automatically correcting erroneous data and for storing the corrected data in a common pool alternate memory array
|
JPS61208673A
(ja)
|
1985-03-12 |
1986-09-17 |
Matsushita Electric Ind Co Ltd |
情報記録再生装置
|
US4744062A
(en)
|
1985-04-23 |
1988-05-10 |
Hitachi, Ltd. |
Semiconductor integrated circuit with nonvolatile memory
|
US4829169A
(en)
|
1985-07-01 |
1989-05-09 |
Toppan Moore Company, Inc. |
IC card having state marker for record access
|
JPH0635227B2
(ja)
|
1985-07-31 |
1994-05-11 |
トツパン・ム−ア株式会社 |
更新情報と履歴情報の読出し手段を有するicカ−ド
|
JPS62102482A
(ja)
|
1985-10-28 |
1987-05-12 |
Matsushita Electric Ind Co Ltd |
情報記録再生装置
|
US4800520A
(en)
|
1985-10-29 |
1989-01-24 |
Kabushiki Kaisha Toshiba |
Portable electronic device with garbage collection function
|
JP2664137B2
(ja)
|
1985-10-29 |
1997-10-15 |
凸版印刷株式会社 |
Icカード
|
US4924331A
(en)
|
1985-11-20 |
1990-05-08 |
Seagate Technology, Inc. |
Method for mapping around defective sectors in a disc drive
|
US4746998A
(en)
|
1985-11-20 |
1988-05-24 |
Seagate Technology, Inc. |
Method for mapping around defective sectors in a disc drive
|
DE3640238A1
(de)
|
1985-11-30 |
1987-06-25 |
Toshiba Kawasaki Kk |
Tragbare elektronische vorrichtung
|
US4757474A
(en)
|
1986-01-28 |
1988-07-12 |
Fujitsu Limited |
Semiconductor memory device having redundancy circuit portion
|
SU1388877A1
(ru)
|
1986-09-16 |
1988-04-15 |
Таганрогский радиотехнический институт им.В.Д.Калмыкова |
Устройство дл адресации блоков пам ти
|
SU1408439A1
(ru)
|
1986-10-20 |
1988-07-07 |
Предприятие П/Я В-2129 |
Устройство адресации дл автоматической конфигурации пам ти ЭВМ
|
US4953122A
(en)
|
1986-10-31 |
1990-08-28 |
Laserdrive Ltd. |
Pseudo-erasable and rewritable write-once optical disk memory system
|
JPS63198567U
(de)
|
1987-06-12 |
1988-12-21 |
|
|
JPS6473430A
(en)
|
1987-09-14 |
1989-03-17 |
Hudson Soft Co Ltd |
Memory access control device
|
JPH081760B2
(ja)
|
1987-11-17 |
1996-01-10 |
三菱電機株式会社 |
半導体記憶装置
|
JPH01137817A
(ja)
|
1987-11-25 |
1989-05-30 |
Toshiba Corp |
遅延回路
|
US5303148A
(en)
*
|
1987-11-27 |
1994-04-12 |
Picker International, Inc. |
Voice actuated volume image controller and display controller
|
SU1515164A1
(ru)
|
1988-01-12 |
1989-10-15 |
Предприятие П/Я Г-4493 |
Устройство дл адресации к пам ти
|
SU1541619A1
(ru)
|
1988-05-30 |
1990-02-07 |
Предприятие П/Я Г-4173 |
Устройство дл формировани адреса
|
US5198380A
(en)
|
1988-06-08 |
1993-03-30 |
Sundisk Corporation |
Method of highly compact EPROM and flash EEPROM devices
|
US5268870A
(en)
|
1988-06-08 |
1993-12-07 |
Eliyahou Harari |
Flash EEPROM system and intelligent programming and erasing methods therefor
|
US5168465A
(en)
|
1988-06-08 |
1992-12-01 |
Eliyahou Harari |
Highly compact EPROM and flash EEPROM devices
|
US5268318A
(en)
|
1988-06-08 |
1993-12-07 |
Eliyahou Harari |
Highly compact EPROM and flash EEPROM devices
|
US5268319A
(en)
|
1988-06-08 |
1993-12-07 |
Eliyahou Harari |
Highly compact EPROM and flash EEPROM devices
|
US5293560A
(en)
|
1988-06-08 |
1994-03-08 |
Eliyahou Harari |
Multi-state flash EEPROM system using incremental programing and erasing methods
|
US4914529A
(en)
|
1988-07-18 |
1990-04-03 |
Western Digital Corp. |
Data disk defect handling using relocation ID fields
|
US5070474A
(en)
|
1988-07-26 |
1991-12-03 |
Disk Emulation Systems, Inc. |
Disk emulation system
|
US5253351A
(en)
|
1988-08-11 |
1993-10-12 |
Hitachi, Ltd. |
Memory controller with a cache memory and control method of cache memory including steps of determining memory access threshold values
|
SU1573458A2
(ru)
|
1988-09-26 |
1990-06-23 |
Войсковая Часть 32103 |
Устройство дл адресации
|
DE69033438T2
(de)
|
1989-04-13 |
2000-07-06 |
Sandisk Corp., Santa Clara |
Austausch von fehlerhaften Speicherzellen einer EEprommatritze
|
US5535328A
(en)
|
1989-04-13 |
1996-07-09 |
Sandisk Corporation |
Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
|
US5226168A
(en)
|
1989-04-25 |
1993-07-06 |
Seiko Epson Corporation |
Semiconductor memory configured to emulate floppy and hard disk magnetic storage based upon a determined storage capacity of the semiconductor memory
|
US5200959A
(en)
|
1989-10-17 |
1993-04-06 |
Sundisk Corporation |
Device and method for defect handling in semi-conductor memory
|
SU1686449A2
(ru)
|
1989-10-23 |
1991-10-23 |
Войсковая Часть 32103 |
Устройство дл адресации
|
US5247658A
(en)
|
1989-10-31 |
1993-09-21 |
Microsoft Corporation |
Method and system for traversing linked list record based upon write-once predetermined bit value of secondary pointers
|
US5218695A
(en)
|
1990-02-05 |
1993-06-08 |
Epoch Systems, Inc. |
File server system having high-speed write execution
|
US5220518A
(en)
|
1990-06-07 |
1993-06-15 |
Vlsi Technology, Inc. |
Integrated circuit memory with non-binary array configuration
|
US5303198A
(en)
|
1990-09-28 |
1994-04-12 |
Fuji Photo Film Co., Ltd. |
Method of recording data in memory card having EEPROM and memory card system using the same
|
DE69021732T2
(de)
|
1990-12-04 |
1996-01-18 |
Hewlett Packard Ltd |
Wiederprogrammierbare Datenspeicherungsanlage.
|
JPH04216392A
(ja)
|
1990-12-18 |
1992-08-06 |
Mitsubishi Electric Corp |
ブロックライト機能を備える半導体記憶装置
|
GB2251324B
(en)
|
1990-12-31 |
1995-05-10 |
Intel Corp |
File structure for a non-volatile semiconductor memory
|
GB2251323B
(en)
|
1990-12-31 |
1994-10-12 |
Intel Corp |
Disk emulation for a non-volatile semiconductor memory
|
US5504760A
(en)
|
1991-03-15 |
1996-04-02 |
Sandisk Corporation |
Mixed data encoding EEPROM system
|
US5270979A
(en)
|
1991-03-15 |
1993-12-14 |
Sundisk Corporation |
Method for optimum erasing of EEPROM
|
US5396468A
(en)
|
1991-03-15 |
1995-03-07 |
Sundisk Corporation |
Streamlined write operation for EEPROM system
|
US5663901A
(en)
|
1991-04-11 |
1997-09-02 |
Sandisk Corporation |
Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
|
JP2582487B2
(ja)
|
1991-07-12 |
1997-02-19 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
半導体メモリを用いた外部記憶システム及びその制御方法
|
US5430859A
(en)
|
1991-07-26 |
1995-07-04 |
Sundisk Corporation |
Solid state memory system including plural memory chips and a serialized bus
|
EP0528280B1
(de)
|
1991-08-09 |
1997-11-12 |
Kabushiki Kaisha Toshiba |
Aufzeichnungsgerät für eine Speicherkarte
|
JP3229345B2
(ja)
|
1991-09-11 |
2001-11-19 |
ローム株式会社 |
不揮発性icメモリ
|
US6230233B1
(en)
|
1991-09-13 |
2001-05-08 |
Sandisk Corporation |
Wear leveling techniques for flash EEPROM systems
|
US5438573A
(en)
|
1991-09-13 |
1995-08-01 |
Sundisk Corporation |
Flash EEPROM array data and header file structure
|
US5357462A
(en)
|
1991-09-24 |
1994-10-18 |
Kabushiki Kaisha Toshiba |
Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
|
US5778418A
(en)
|
1991-09-27 |
1998-07-07 |
Sandisk Corporation |
Mass computer storage system having both solid state and rotating disk types of memory
|
US5227714A
(en)
|
1991-10-07 |
1993-07-13 |
Brooktree Corporation |
Voltage regulator
|
US5640528A
(en)
|
1991-10-24 |
1997-06-17 |
Intel Corporation |
Method and apparatus for translating addresses using mask and replacement value registers
|
US5315558A
(en)
|
1991-10-25 |
1994-05-24 |
Vlsi Technology, Inc. |
Integrated circuit memory with non-binary array configuration
|
US5359569A
(en)
|
1991-10-29 |
1994-10-25 |
Hitachi Ltd. |
Semiconductor memory
|
JPH05151097A
(ja)
|
1991-11-28 |
1993-06-18 |
Fujitsu Ltd |
書換回数制限型メモリのデータ管理方式
|
US6222762B1
(en)
*
|
1992-01-14 |
2001-04-24 |
Sandisk Corporation |
Multi-state memory
|
JP3171901B2
(ja)
|
1992-02-05 |
2001-06-04 |
セイコーインスツルメンツ株式会社 |
不揮発性メモリカードの書換え方法
|
JPH05233426A
(ja)
|
1992-02-20 |
1993-09-10 |
Fujitsu Ltd |
フラッシュ・メモリ使用方法
|
US5371702A
(en)
|
1992-03-05 |
1994-12-06 |
Kabushiki Kaisha Toshiba |
Block erasable nonvolatile memory device
|
FR2688333B1
(fr)
|
1992-03-06 |
1994-04-29 |
Sgc Thomson Microelectronics S |
Dispositif et procede d'effacement par secteurs d'une memoire flash eprom.
|
TW231343B
(de)
|
1992-03-17 |
1994-10-01 |
Hitachi Seisakusyo Kk |
|
JP2830594B2
(ja)
|
1992-03-26 |
1998-12-02 |
日本電気株式会社 |
半導体メモリ装置
|
US5267218A
(en)
|
1992-03-31 |
1993-11-30 |
Intel Corporation |
Nonvolatile memory card with a single power supply input
|
JP3485938B2
(ja)
|
1992-03-31 |
2004-01-13 |
株式会社東芝 |
不揮発性半導体メモリ装置
|
US5532962A
(en)
|
1992-05-20 |
1996-07-02 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
US5381539A
(en)
|
1992-06-04 |
1995-01-10 |
Emc Corporation |
System and method for dynamically controlling cache management
|
DE4219145C1
(de)
|
1992-06-11 |
1994-03-17 |
Emitec Emissionstechnologie |
Verfahren und Vorrichtung zum Beloten eines metallischen Wabenkörpers
|
JP3328321B2
(ja)
|
1992-06-22 |
2002-09-24 |
株式会社日立製作所 |
半導体記憶装置
|
JPH0612863A
(ja)
|
1992-06-26 |
1994-01-21 |
Toshiba Corp |
デュアルポートdram
|
US5592415A
(en)
|
1992-07-06 |
1997-01-07 |
Hitachi, Ltd. |
Non-volatile semiconductor memory
|
JPH06195258A
(ja)
*
|
1992-07-08 |
1994-07-15 |
Nec Corp |
半導体記憶装置
|
US5315541A
(en)
|
1992-07-24 |
1994-05-24 |
Sundisk Corporation |
Segmented column memory array
|
JPH06103748A
(ja)
|
1992-09-16 |
1994-04-15 |
Mitsubishi Electric Corp |
Icメモリカードの電源制御回路
|
US5428621A
(en)
|
1992-09-21 |
1995-06-27 |
Sundisk Corporation |
Latent defect handling in EEPROM devices
|
JP3105092B2
(ja)
|
1992-10-06 |
2000-10-30 |
株式会社東芝 |
半導体メモリ装置
|
US5341330A
(en)
|
1992-10-30 |
1994-08-23 |
Intel Corporation |
Method for writing to a flash memory array during erase suspend intervals
|
US5822781A
(en)
*
|
1992-10-30 |
1998-10-13 |
Intel Corporation |
Sector-based storage device emulator having variable-sized sector
|
US5341339A
(en)
|
1992-10-30 |
1994-08-23 |
Intel Corporation |
Method for wear leveling in a flash EEPROM memory
|
US5337275A
(en)
|
1992-10-30 |
1994-08-09 |
Intel Corporation |
Method for releasing space in flash EEPROM memory array to allow the storage of compressed data
|
US5357475A
(en)
|
1992-10-30 |
1994-10-18 |
Intel Corporation |
Method for detaching sectors in a flash EEPROM memory array
|
US5734567A
(en)
|
1992-11-06 |
1998-03-31 |
Siemens Aktiengesellschaft |
Diagnosis system for a plant
|
US5581723A
(en)
|
1993-02-19 |
1996-12-03 |
Intel Corporation |
Method and apparatus for retaining flash block structure data during erase operations in a flash EEPROM memory array
|
JP2856621B2
(ja)
|
1993-02-24 |
1999-02-10 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
|
EP0613151A3
(de)
|
1993-02-26 |
1995-03-22 |
Tokyo Shibaura Electric Co |
Halbleiterspeichersystem mit Flash-EEPROM.
|
JP3594626B2
(ja)
|
1993-03-04 |
2004-12-02 |
株式会社ルネサステクノロジ |
不揮発性メモリ装置
|
US5404485A
(en)
|
1993-03-08 |
1995-04-04 |
M-Systems Flash Disk Pioneers Ltd. |
Flash file system
|
JPH06266596A
(ja)
|
1993-03-11 |
1994-09-22 |
Hitachi Ltd |
フラッシュメモリファイル記憶装置および情報処理装置
|
JP3477781B2
(ja)
|
1993-03-23 |
2003-12-10 |
セイコーエプソン株式会社 |
Icカード
|
US5485595A
(en)
|
1993-03-26 |
1996-01-16 |
Cirrus Logic, Inc. |
Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
|
US5388083A
(en)
|
1993-03-26 |
1995-02-07 |
Cirrus Logic, Inc. |
Flash memory mass storage architecture
|
US5479638A
(en)
|
1993-03-26 |
1995-12-26 |
Cirrus Logic, Inc. |
Flash memory mass storage architecture incorporation wear leveling technique
|
KR970008188B1
(ko)
|
1993-04-08 |
1997-05-21 |
가부시끼가이샤 히다찌세이사꾸쇼 |
플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
|
JP3330187B2
(ja)
|
1993-05-13 |
2002-09-30 |
株式会社リコー |
メモリカード
|
US5353256A
(en)
|
1993-06-30 |
1994-10-04 |
Intel Corporation |
Block specific status information in a memory device
|
US5519847A
(en)
|
1993-06-30 |
1996-05-21 |
Intel Corporation |
Method of pipelining sequential writes in a flash memory
|
US5329491A
(en)
|
1993-06-30 |
1994-07-12 |
Intel Corporation |
Nonvolatile memory card with automatic power supply configuration
|
US5422842A
(en)
|
1993-07-08 |
1995-06-06 |
Sundisk Corporation |
Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
|
US5566314A
(en)
|
1993-08-30 |
1996-10-15 |
Lucent Technologies Inc. |
Flash memory device employing unused cell arrays to update files
|
JP2922116B2
(ja)
|
1993-09-02 |
1999-07-19 |
株式会社東芝 |
半導体記憶装置
|
JP3215237B2
(ja)
|
1993-10-01 |
2001-10-02 |
富士通株式会社 |
記憶装置および記憶装置の書き込み/消去方法
|
US5365127A
(en)
|
1993-10-18 |
1994-11-15 |
Hewlett-Packard Company |
Circuit for conversion from CMOS voltage levels to shifted ECL voltage levels with process compensation
|
JPH07235193A
(ja)
|
1993-12-28 |
1995-09-05 |
Toshiba Corp |
半導体記憶装置
|
EP0663636B1
(de)
|
1994-01-12 |
2001-10-31 |
Sun Microsystems, Inc. |
Logisch adressierbarer physikalischer Speicher für ein Rechnersystem mit virtuellem Speicher, das mehrere Seitengrössen unterstützt
|
US5473765A
(en)
|
1994-01-24 |
1995-12-05 |
3Com Corporation |
Apparatus for using flash memory as a floppy disk emulator in a computer system
|
US6026027A
(en)
|
1994-01-31 |
2000-02-15 |
Norand Corporation |
Flash memory system having memory cache
|
US5661053A
(en)
|
1994-05-25 |
1997-08-26 |
Sandisk Corporation |
Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
|
US5553261A
(en)
*
|
1994-04-01 |
1996-09-03 |
Intel Corporation |
Method of performing clean-up of a solid state disk while executing a read command
|
US5603001A
(en)
|
1994-05-09 |
1997-02-11 |
Kabushiki Kaisha Toshiba |
Semiconductor disk system having a plurality of flash memories
|
US5809558A
(en)
|
1994-09-29 |
1998-09-15 |
Intel Corporation |
Method and data storage system for storing data in blocks without file reallocation before erasure
|
US5508971A
(en)
|
1994-10-17 |
1996-04-16 |
Sandisk Corporation |
Programmable power generation circuit for flash EEPROM memory systems
|
US5606660A
(en)
|
1994-10-21 |
1997-02-25 |
Lexar Microsystems, Inc. |
Method and apparatus for combining controller firmware storage and controller logic in a mass storage system
|
JP2669365B2
(ja)
|
1994-11-24 |
1997-10-27 |
日本電気株式会社 |
書換え可能なromファイル装置
|
US5537077A
(en)
|
1994-12-23 |
1996-07-16 |
Advanced Micro Devices, Inc. |
Power supply dependent method of controlling a charge pump
|
US5847552A
(en)
|
1995-01-24 |
1998-12-08 |
Dell Usa, L.P. |
Integrated circuit with determinate power source control
|
JPH08212019A
(ja)
|
1995-01-31 |
1996-08-20 |
Mitsubishi Electric Corp |
半導体ディスク装置
|
JPH08263361A
(ja)
|
1995-03-23 |
1996-10-11 |
Mitsubishi Electric Corp |
フラッシュメモリカード
|
US5818350A
(en)
|
1995-04-11 |
1998-10-06 |
Lexar Microsystems Inc. |
High performance method of and system for selecting one of a plurality of IC chip while requiring minimal select lines
|
US6072796A
(en)
|
1995-06-14 |
2000-06-06 |
Avid Technology, Inc. |
Apparatus and method for accessing memory in a TDM network
|
US5723990A
(en)
*
|
1995-06-21 |
1998-03-03 |
Micron Quantum Devices, Inc. |
Integrated circuit having high voltage detection circuit
|
US5552698A
(en)
|
1995-06-29 |
1996-09-03 |
United Microelectronics Corp. |
Voltage supply system for IC chips
|
US5627416A
(en)
|
1995-07-21 |
1997-05-06 |
Itt Corporation |
Multi-voltage IC card host
|
US5838614A
(en)
|
1995-07-31 |
1998-11-17 |
Lexar Microsystems, Inc. |
Identification and verification of a sector within a block of mass storage flash memory
|
US5907856A
(en)
|
1995-07-31 |
1999-05-25 |
Lexar Media, Inc. |
Moving sectors within a block of information in a flash memory mass storage architecture
|
US6757800B1
(en)
|
1995-07-31 |
2004-06-29 |
Lexar Media, Inc. |
Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
|
US5930815A
(en)
|
1995-07-31 |
1999-07-27 |
Lexar Media, Inc. |
Moving sequential sectors within a block of information in a flash memory mass storage architecture
|
US6978342B1
(en)
|
1995-07-31 |
2005-12-20 |
Lexar Media, Inc. |
Moving sectors within a block of information in a flash memory mass storage architecture
|
US6081878A
(en)
|
1997-03-31 |
2000-06-27 |
Lexar Media, Inc. |
Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
|
US8171203B2
(en)
|
1995-07-31 |
2012-05-01 |
Micron Technology, Inc. |
Faster write operations to nonvolatile memory using FSInfo sector manipulation
|
US5845313A
(en)
|
1995-07-31 |
1998-12-01 |
Lexar |
Direct logical block addressing flash memory mass storage architecture
|
US6728851B1
(en)
|
1995-07-31 |
2004-04-27 |
Lexar Media, Inc. |
Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
|
US5596526A
(en)
|
1995-08-15 |
1997-01-21 |
Lexar Microsystems, Inc. |
Non-volatile memory system of multi-level transistor cells and methods using same
|
JPH0954726A
(ja)
|
1995-08-18 |
1997-02-25 |
Mitsubishi Electric Corp |
記憶装置
|
JPH0969295A
(ja)
|
1995-08-31 |
1997-03-11 |
Sanyo Electric Co Ltd |
不揮発性多値メモリ装置
|
US6125435A
(en)
|
1995-09-13 |
2000-09-26 |
Lexar Media, Inc. |
Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
|
US5835935A
(en)
*
|
1995-09-13 |
1998-11-10 |
Lexar Media, Inc. |
Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
|
GB2291991A
(en)
|
1995-09-27 |
1996-02-07 |
Memory Corp Plc |
Disk drive emulation with a block-erasable memory
|
GB2291990A
(en)
|
1995-09-27 |
1996-02-07 |
Memory Corp Plc |
Flash-memory management system
|
US5809560A
(en)
|
1995-10-13 |
1998-09-15 |
Compaq Computer Corporation |
Adaptive read-ahead disk cache
|
KR100253868B1
(ko)
|
1995-11-13 |
2000-05-01 |
니시무로 타이죠 |
불휘발성 반도체기억장치
|
JP4299883B2
(ja)
|
1995-11-13 |
2009-07-22 |
レクサー・メディア・インコーポレーテッド |
複数電圧印加における自動電圧検出
|
JPH09179599A
(ja)
*
|
1995-12-27 |
1997-07-11 |
Olympus Optical Co Ltd |
音声記録再生装置
|
US5799168A
(en)
|
1996-01-05 |
1998-08-25 |
M-Systems Flash Disk Pioneers Ltd. |
Standardized flash controller
|
JPH09212411A
(ja)
|
1996-02-06 |
1997-08-15 |
Tokyo Electron Ltd |
メモリシステム
|
US5724303A
(en)
|
1996-02-15 |
1998-03-03 |
Nexcom Technology, Inc. |
Non-volatile programmable memory having an SRAM capability
|
US5787445A
(en)
|
1996-03-07 |
1998-07-28 |
Norris Communications Corporation |
Operating system including improved file management for use in devices utilizing flash memory as main memory
|
US5822252A
(en)
|
1996-03-29 |
1998-10-13 |
Aplus Integrated Circuits, Inc. |
Flash memory wordline decoder with overerase repair
|
GB9606927D0
(en)
|
1996-04-02 |
1996-06-05 |
Memory Corp Plc |
Data storage devices
|
GB9606928D0
(en)
|
1996-04-02 |
1996-06-05 |
Memory Corp Plc |
Memory devices
|
US5991849A
(en)
|
1996-04-10 |
1999-11-23 |
Sanyo Electric Co., Ltd |
Rewriting protection of a size varying first region of a reprogrammable non-volatile memory
|
GB9609833D0
(en)
|
1996-05-10 |
1996-07-17 |
Memory Corp Plc |
Memory device
|
US5765204A
(en)
*
|
1996-06-05 |
1998-06-09 |
International Business Machines Corporation |
Method and apparatus for adaptive localization of frequently accessed, randomly addressed data
|
US5959926A
(en)
|
1996-06-07 |
1999-09-28 |
Dallas Semiconductor Corp. |
Programmable power supply systems and methods providing a write protected memory having multiple interface capability
|
JP3493096B2
(ja)
|
1996-06-07 |
2004-02-03 |
株式会社東芝 |
半導体集積回路、icカード、及びicカードシステム
|
GB9613088D0
(en)
|
1996-06-21 |
1996-08-28 |
Memory Corp Plc |
Memory device
|
US5758100A
(en)
*
|
1996-07-01 |
1998-05-26 |
Sun Microsystems, Inc. |
Dual voltage module interconnect
|
GB9614551D0
(en)
|
1996-07-11 |
1996-09-04 |
Memory Corp Plc |
Memory system
|
JP3761635B2
(ja)
|
1996-07-12 |
2006-03-29 |
株式会社ダックス |
メモリボード、メモリアクセス方法及びメモリアクセス装置
|
US5757712A
(en)
|
1996-07-12 |
1998-05-26 |
International Business Machines Corporation |
Memory modules with voltage regulation and level translation
|
JPH1031611A
(ja)
*
|
1996-07-15 |
1998-02-03 |
Advantest Corp |
不揮発性メモリ記憶媒体用ファイルシステム
|
US5787484A
(en)
|
1996-08-08 |
1998-07-28 |
Micron Technology, Inc. |
System and method which compares data preread from memory cells to data to be written to the cells
|
US6021408A
(en)
|
1996-09-12 |
2000-02-01 |
Veritas Software Corp. |
Methods for operating a log device
|
US5920884A
(en)
|
1996-09-24 |
1999-07-06 |
Hyundai Electronics America, Inc. |
Nonvolatile memory interface protocol which selects a memory device, transmits an address, deselects the device, subsequently reselects the device and accesses data
|
US5860124A
(en)
|
1996-09-30 |
1999-01-12 |
Intel Corporation |
Method for performing a continuous over-write of a file in nonvolatile memory
|
US5754567A
(en)
|
1996-10-15 |
1998-05-19 |
Micron Quantum Devices, Inc. |
Write reduction in flash memory systems through ECC usage
|
US6047352A
(en)
|
1996-10-29 |
2000-04-04 |
Micron Technology, Inc. |
Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
|
US5890192A
(en)
|
1996-11-05 |
1999-03-30 |
Sandisk Corporation |
Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
|
US5909586A
(en)
|
1996-11-06 |
1999-06-01 |
The Foxboro Company |
Methods and systems for interfacing with an interface powered I/O device
|
US5745418A
(en)
|
1996-11-25 |
1998-04-28 |
Macronix International Co., Ltd. |
Flash memory mass storage system
|
US5956473A
(en)
|
1996-11-25 |
1999-09-21 |
Macronix International Co., Ltd. |
Method and system for managing a flash memory mass storage system
|
JPH10154101A
(ja)
*
|
1996-11-26 |
1998-06-09 |
Toshiba Corp |
データ記憶システム及び同システムに適用するキャッシュ制御方法
|
JPH10177797A
(ja)
|
1996-12-17 |
1998-06-30 |
Toshiba Corp |
半導体記憶装置
|
JPH10187505A
(ja)
|
1996-12-24 |
1998-07-21 |
Toshiba Corp |
情報記憶システム及び同システムに適用するデータ配置方法
|
US6279069B1
(en)
|
1996-12-26 |
2001-08-21 |
Intel Corporation |
Interface for flash EEPROM memory arrays
|
US5901086A
(en)
|
1996-12-26 |
1999-05-04 |
Motorola, Inc. |
Pipelined fast-access floating gate memory architecture and method of operation
|
US5928370A
(en)
|
1997-02-05 |
1999-07-27 |
Lexar Media, Inc. |
Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
|
US5822245A
(en)
|
1997-03-26 |
1998-10-13 |
Atmel Corporation |
Dual buffer flash memory architecture with multiple operating modes
|
US5953737A
(en)
|
1997-03-31 |
1999-09-14 |
Lexar Media, Inc. |
Method and apparatus for performing erase operations transparent to a solid state storage system
|
US6411546B1
(en)
|
1997-03-31 |
2002-06-25 |
Lexar Media, Inc. |
Nonvolatile memory using flexible erasing methods and method and system for using same
|
US6122195A
(en)
|
1997-03-31 |
2000-09-19 |
Lexar Media, Inc. |
Method and apparatus for decreasing block write operation times performed on nonvolatile memory
|
US6034897A
(en)
|
1999-04-01 |
2000-03-07 |
Lexar Media, Inc. |
Space management for managing high capacity nonvolatile memory
|
US5831929A
(en)
|
1997-04-04 |
1998-11-03 |
Micron Technology, Inc. |
Memory device with staggered data paths
|
JP3592887B2
(ja)
|
1997-04-30 |
2004-11-24 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US6011322A
(en)
|
1997-07-28 |
2000-01-04 |
Sony Corporation |
Apparatus and method for providing power to circuitry implementing two different power sources
|
US6226708B1
(en)
|
1997-08-18 |
2001-05-01 |
Texas Instruments Incorporated |
Method and system for efficiently programming non-volatile memory
|
US6000006A
(en)
*
|
1997-08-25 |
1999-12-07 |
Bit Microsystems, Inc. |
Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
|
US6011323A
(en)
|
1997-09-30 |
2000-01-04 |
International Business Machines Corporation |
Apparatus, method and article of manufacture providing for auxiliary battery conservation in adapters
|
JPH11110245A
(ja)
*
|
1997-10-03 |
1999-04-23 |
Fujitsu Ltd |
エバリュエーションパッケージ
|
US5937425A
(en)
|
1997-10-16 |
1999-08-10 |
M-Systems Flash Disk Pioneers Ltd. |
Flash file system optimized for page-mode flash technologies
|
JPH11224492A
(ja)
|
1997-11-06 |
1999-08-17 |
Toshiba Corp |
半導体記憶装置、不揮発性半導体記憶装置及びフラッシュメモリ
|
US6018265A
(en)
|
1997-12-10 |
2000-01-25 |
Lexar Media, Inc. |
Internal CMOS reference generator and voltage regulator
|
US6076137A
(en)
|
1997-12-11 |
2000-06-13 |
Lexar Media, Inc. |
Method and apparatus for storing location identification information within non-volatile memory devices
|
GB9801373D0
(en)
|
1998-01-22 |
1998-03-18 |
Memory Corp Plc |
Memory system
|
US5969986A
(en)
|
1998-06-23 |
1999-10-19 |
Invox Technology |
High-bandwidth read and write architectures for non-volatile memories
|
DE19980546B4
(de)
|
1998-03-02 |
2011-01-27 |
Lexar Media, Inc., Fremont |
Flash-Speicherkarte mit erweiterter Betriebsmodus-Erkennung und benutzerfreundlichem Schnittstellensystem
|
US6182162B1
(en)
|
1998-03-02 |
2001-01-30 |
Lexar Media, Inc. |
Externally coupled compact flash memory card that configures itself one of a plurality of appropriate operating protocol modes of a host computer
|
US6040997A
(en)
|
1998-03-25 |
2000-03-21 |
Lexar Media, Inc. |
Flash memory leveling architecture having no external latch
|
GB9806687D0
(en)
|
1998-03-27 |
1998-05-27 |
Memory Corp Plc |
Memory system
|
US6055184A
(en)
|
1998-09-02 |
2000-04-25 |
Texas Instruments Incorporated |
Semiconductor memory device having programmable parallel erase operation
|
US6279114B1
(en)
|
1998-11-04 |
2001-08-21 |
Sandisk Corporation |
Voltage negotiation in a single host multiple cards system
|
US6490649B2
(en)
|
1998-11-10 |
2002-12-03 |
Lexar Media, Inc. |
Memory device
|
US6374337B1
(en)
|
1998-11-17 |
2002-04-16 |
Lexar Media, Inc. |
Data pipelining method and apparatus for memory control circuit
|
GB9903490D0
(en)
|
1999-02-17 |
1999-04-07 |
Memory Corp Plc |
Memory system
|
US6041001A
(en)
|
1999-02-25 |
2000-03-21 |
Lexar Media, Inc. |
Method of increasing data reliability of a flash memory device without compromising compatibility
|
US6084483A
(en)
|
1999-03-10 |
2000-07-04 |
Lexar Media, Inc. |
Internal oscillator circuit including a ring oscillator controlled by a voltage regulator circuit
|
US6141249A
(en)
|
1999-04-01 |
2000-10-31 |
Lexar Media, Inc. |
Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
|
ATE340405T1
(de)
|
1999-04-01 |
2006-10-15 |
Lexar Media Inc |
Raumverwaltung in einem nichtflüchtigen speicher mit hoher kapazität
|
US6282605B1
(en)
*
|
1999-04-26 |
2001-08-28 |
Moore Computer Consultants, Inc. |
File system for non-volatile computer memory
|
US6181118B1
(en)
|
1999-06-24 |
2001-01-30 |
Analog Devices, Inc. |
Control circuit for controlling a semi-conductor switch for selectively outputting an output voltage at two voltage levels
|
US20030003471A1
(en)
*
|
1999-07-12 |
2003-01-02 |
Famodu Omolayo O. |
cDNAs encoding polypeptides
|
JP3793868B2
(ja)
*
|
1999-11-25 |
2006-07-05 |
カシオ計算機株式会社 |
フラッシュメモリ管理装置及び記録媒体
|
US6426893B1
(en)
*
|
2000-02-17 |
2002-07-30 |
Sandisk Corporation |
Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
|
US6721843B1
(en)
|
2000-07-07 |
2004-04-13 |
Lexar Media, Inc. |
Flash memory architecture implementing simultaneously programmable multiple flash memory banks that are host compatible
|
JP2002032256A
(ja)
*
|
2000-07-19 |
2002-01-31 |
Matsushita Electric Ind Co Ltd |
端末装置
|
US6567307B1
(en)
|
2000-07-21 |
2003-05-20 |
Lexar Media, Inc. |
Block management for mass storage
|
US6772274B1
(en)
*
|
2000-09-13 |
2004-08-03 |
Lexar Media, Inc. |
Flash memory system and method implementing LBA to PBA correlation within flash memory array
|
TW539946B
(en)
|
2001-08-07 |
2003-07-01 |
Solid State System Company Ltd |
Window-based flash memory storage system, and the management method and the access method thereof
|
US20030046482A1
(en)
|
2001-08-28 |
2003-03-06 |
International Business Machines Corporation |
Data management in flash memory
|
GB0123422D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Improved memory controller
|
GB0123410D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Memory system for data storage and retrieval
|
GB0123416D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Non-volatile memory control
|
GB0123419D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Data handling system
|
GB2411499B
(en)
|
2001-09-28 |
2006-02-08 |
Lexar Media Inc |
Method of writing data to non-volatile memory
|
GB0123415D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Method of writing data to non-volatile memory
|
GB0123412D0
(en)
|
2001-09-28 |
2001-11-21 |
Memquest Ltd |
Memory system sectors
|
GB0129286D0
(en)
|
2001-12-06 |
2002-01-23 |
Optek Ltd |
Improvements relating to the coupling of optical waveguides
|
TWI240861B
(en)
|
2002-01-11 |
2005-10-01 |
Integrated Circuit Solution In |
Data access method and architecture of flash memory
|
US6950918B1
(en)
|
2002-01-18 |
2005-09-27 |
Lexar Media, Inc. |
File management of one-time-programmable nonvolatile memory devices
|
US6957295B1
(en)
|
2002-01-18 |
2005-10-18 |
Lexar Media, Inc. |
File management of one-time-programmable nonvolatile memory devices
|
US7085879B2
(en)
*
|
2002-02-27 |
2006-08-01 |
Microsoft Corporation |
Dynamic data structures for tracking data stored in a flash memory device
|
US6901499B2
(en)
*
|
2002-02-27 |
2005-05-31 |
Microsoft Corp. |
System and method for tracking data stored in a flash memory device
|
US20030163633A1
(en)
*
|
2002-02-27 |
2003-08-28 |
Aasheim Jered Donald |
System and method for achieving uniform wear levels in a flash memory device
|
ATE372578T1
(de)
*
|
2002-10-28 |
2007-09-15 |
Sandisk Corp |
Automatischer abnutzungsausgleich in einem nicht- flüchtigen speichersystem
|
JP3822171B2
(ja)
*
|
2003-02-03 |
2006-09-13 |
株式会社東芝 |
不揮発性半導体メモリ装置及びその制御方法、不揮発性半導体メモリ装置システム及びその制御方法
|
US6973519B1
(en)
|
2003-06-03 |
2005-12-06 |
Lexar Media, Inc. |
Card identification compatibility
|