ATE415686T1 - Platzverwaltung zur verwaltung eines nichtflüchtigen hochleistungsspeichers - Google Patents

Platzverwaltung zur verwaltung eines nichtflüchtigen hochleistungsspeichers

Info

Publication number
ATE415686T1
ATE415686T1 AT06076748T AT06076748T ATE415686T1 AT E415686 T1 ATE415686 T1 AT E415686T1 AT 06076748 T AT06076748 T AT 06076748T AT 06076748 T AT06076748 T AT 06076748T AT E415686 T1 ATE415686 T1 AT E415686T1
Authority
AT
Austria
Prior art keywords
block
blocks
nonvolatile memory
memory devices
super
Prior art date
Application number
AT06076748T
Other languages
English (en)
Inventor
Petro Estakhri
Berhanu Iman
Min Guo
Original Assignee
Lexar Media Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23087303&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE415686(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lexar Media Inc filed Critical Lexar Media Inc
Application granted granted Critical
Publication of ATE415686T1 publication Critical patent/ATE415686T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
AT06076748T 1999-04-01 2000-03-30 Platzverwaltung zur verwaltung eines nichtflüchtigen hochleistungsspeichers ATE415686T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/283,728 US6034897A (en) 1999-04-01 1999-04-01 Space management for managing high capacity nonvolatile memory
US09/519,226 US6134151A (en) 1999-04-01 2000-03-06 Space management for managing high capacity nonvolatile memory

Publications (1)

Publication Number Publication Date
ATE415686T1 true ATE415686T1 (de) 2008-12-15

Family

ID=23087303

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06076748T ATE415686T1 (de) 1999-04-01 2000-03-30 Platzverwaltung zur verwaltung eines nichtflüchtigen hochleistungsspeichers

Country Status (4)

Country Link
US (2) US6034897A (de)
EP (1) EP1739683B1 (de)
AT (1) ATE415686T1 (de)
DE (1) DE60040939D1 (de)

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EP1739683A1 (de) 2007-01-03

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