WO2011071103A1 - 希土類超電導膜形成用溶液およびその製造方法 - Google Patents
希土類超電導膜形成用溶液およびその製造方法 Download PDFInfo
- Publication number
- WO2011071103A1 WO2011071103A1 PCT/JP2010/072104 JP2010072104W WO2011071103A1 WO 2011071103 A1 WO2011071103 A1 WO 2011071103A1 JP 2010072104 W JP2010072104 W JP 2010072104W WO 2011071103 A1 WO2011071103 A1 WO 2011071103A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- solution
- rare earth
- producing
- metal
- Prior art date
Links
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 42
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052788 barium Inorganic materials 0.000 claims abstract description 16
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 15
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 14
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000003512 tertiary amines Chemical class 0.000 claims abstract description 10
- 125000005595 acetylacetonate group Chemical group 0.000 claims abstract description 6
- 125000002843 carboxylic acid group Chemical group 0.000 claims abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 30
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 8
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 6
- -1 carbon carboxylate Chemical class 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 34
- 238000010438 heat treatment Methods 0.000 abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 15
- 150000004706 metal oxides Chemical class 0.000 abstract description 15
- 239000002131 composite material Substances 0.000 abstract description 13
- 238000000197 pyrolysis Methods 0.000 abstract description 4
- 238000007598 dipping method Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 108
- 239000000243 solution Substances 0.000 description 39
- 238000000576 coating method Methods 0.000 description 18
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 16
- 239000000654 additive Substances 0.000 description 16
- 239000002887 superconductor Substances 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 14
- 238000010304 firing Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 10
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 229910052727 yttrium Inorganic materials 0.000 description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 150000001298 alcohols Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229940051250 hexylene glycol Drugs 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 235000019260 propionic acid Nutrition 0.000 description 4
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229960005082 etohexadiol Drugs 0.000 description 3
- 239000012456 homogeneous solution Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229940093476 ethylene glycol Drugs 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 229960005150 glycerol Drugs 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/006—Compounds containing, besides copper, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
Definitions
- the present invention relates to the manufacture of a superconducting composite metal oxide film aimed at application to superconducting microwave devices, current limiters, wires, and the like.
- a solution containing an organic compound containing an atomic species that forms a superconducting film on various supports is used as a raw material, and this is applied on a substrate and subjected to heat treatment to thermally decompose the coating film.
- a coating pyrolysis method for forming a superconducting film.
- an organic compound containing an atomic species is dissolved as uniformly as possible in a solvent to prepare a homogeneous mixed solution, the solution is uniformly coated on a support, and heat treatment is performed to remove an organic substance or the like.
- this manufacturing method Compared with other methods such as vacuum deposition, this manufacturing method has the advantage that it is a low-cost film forming method because it does not require a vacuum device, and the film formation on a long, large-area substrate is possible. It has the feature of being easy. Also, from the viewpoint of the characteristics of the superconducting film produced by this method, it was highly evaluated as being better than other production methods.
- Non-Patent Documents 1 and 2 a superconductor can be formed by applying a trifluoroacetate solution on a support and heat-treating it in a steam atmosphere.
- Non-patent Document 3 the Superconducting Engineering Laboratory announced that the process was improved and optimized to successfully produce a superconducting film having high critical current characteristics.
- the present invention has been made in view of the above situation, and when a rare earth superconducting composite metal oxide film (hereinafter referred to as “rare earth superconducting film”) is produced by a coating pyrolysis method, a coating / firing process is performed. Without repeating, the object is to provide a coating solution that does not cause cracks in the heat treatment step for removing organic components even when the equivalent film thickness is 500 nm or more.
- a metal ion of a metal species containing a rare earth element, barium and copper, pyridine and / or at least one tertiary amine at least one carboxylic acid group having 1 to 8 carbon atoms, If necessary, a metal complex coordinated with an acetylacetonato group is dissolved in a solvent obtained by adding a polyhydric alcohol to a monovalent linear alcohol having 1 to 8 carbon atoms and / or water.
- a solution for producing a rare earth superconducting film characterized in that it is a homogeneous solution.
- a method for producing a solution for producing a rare earth superconducting film further comprising adding a polyhydric alcohol to obtain a uniform solution.
- the polyhydric alcohol is at least one selected from divalent alcohols and trivalent alcohols.
- the present invention in forming a rare earth superconducting film having a film thickness of 500 nm or more, the number of steps of applying a raw material solution and a heat treatment step of removing organic components is reduced, so that all steps are shortened and resource saving is achieved. , Energy saving and cost reduction are realized.
- the solution for producing the rare earth superconducting film of the present invention comprises pyridine and / or at least one tertiary amine and at least one carbon number of 1 with respect to metal ions of the metal species containing rare earth elements, barium and copper.
- a metal complex in which a carboxylic acid group of ⁇ 8 and a acetylacetonato group are coordinated as necessary is obtained by adding a polyhydric alcohol to a monovalent linear alcohol having 1 to 8 carbon atoms and / or water. It is characterized in that it is dissolved in a solvent to make a uniform solution.
- the homogeneous solution containing the metal complex of the present invention contains each metal component composed of rare earth metal, barium (Ba), and copper (Cu) as an essential component.
- This solution is used to form an oxide superconducting film, and can be used to synthesize an inorganic compound containing these metal components by performing a heat treatment.
- the essential rare earth metal elements include yttrium (Y) and lanthanoid elements, lanthanum (La), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), dysprosium (Dy). , Holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu). These rare earth metals can also use a plurality of metals selected from these.
- rare earth metal barium and copper essential metal components
- other rare earth metals such as cerium (Ce) and praseodymium (Pr), calcium
- strontium the electrical characteristics of the resulting superconducting film can be changed.
- any metal species that can be used as a metal species that can be used when forming a superconducting film can be used as appropriate.
- the ratio of rare earth metal, barium, and copper is a rare earth 123 system having a ratio of 1: 2: 3 (hereinafter, for example, when the rare earth metal is yttrium, A superconducting film having a ratio of 1: 2: 4 (hereinafter referred to as Y124 when the rare earth metal is yttrium, for example).
- the mixing ratio of the element species in the raw material solution is preferably a molar ratio of 1: 2: 3 to 1: 2: 4, but a preferable result can be obtained even with, for example, a composition lacking barium. , This ratio is not something that can be tied.
- monovalent metals such as silver, divalent metals such as calcium and strontium, trivalent metals such as rare earth metals other than the essential rare earth metals constituting the superconducting phase, and tetravalent metals such as zirconium and hafnium are added to the above solution.
- a superconductor containing an additive element or a compound thereof superconductors containing additive elements such as calcium and strontium or their compounds have different electrical characteristics from superconductors that do not contain them, so by controlling the ratio of metals in the solution, It is possible to control various characteristics such as critical temperature and critical current density.
- these metal ions contain pyridine and / or at least one tertiary amine, at least one carboxylic acid group having 1 to 8 carbon atoms, and, if necessary, an acetylacetonate group.
- the coordinated metal complex is uniformly dissolved.
- tertiary amine which is one of the ligands in the metal complex, for example, trimethylamine, triethylamine, tripropylamine, tributylamine and the like are used, and “carboxylic acid group having 1 to 8 carbon atoms” is used.
- carboxylic acid examples include 2-ethylhexanoic acid, caprylic acid, butyric acid, propionic acid, acetic acid, oxalic acid, citric acid, lactic acid, benzoic acid, and salicylic acid.
- a metal species containing a rare earth element, barium and copper, a metal carboxylate having 1 to 8 carbon atoms and / or a metal acetylacetonate powder mixture, pyridine and / or It is prepared by adding at least one tertiary amine and at least one carboxylic acid having 1 to 8 carbon atoms.
- the metal complex is dissolved in a solvent obtained by adding a polyhydric alcohol to a monovalent linear alcohol having 1 to 8 carbon atoms and / or water, It is a homogeneous solution. That is, the solution for producing a rare earth superconducting film of the present invention is obtained by adding pyridine and / or at least one tertiary amine and at least one carboxylic acid having 1 to 8 carbon atoms to the powder mixture. After the excess solvent is volatilized, the product is dissolved in a monovalent linear alcohol having 1 to 8 carbon atoms and / or water, and a polyhydric alcohol is added to obtain a uniform solution. Manufactured.
- Examples of the monovalent linear alcohol having 1 to 8 carbon atoms include methanol, ethanol, n-propanol, n-butanol, n-pentanol, n-hexanol and the like, and a mixture thereof can also be used.
- water can be used to dissolve the metal complex, and a mixture of one or more of the aforementioned monovalent linear alcohols having 1 to 8 carbon atoms and water can also be used.
- the present invention by using a solvent in which a polyhydric alcohol is added to the linear alcohol having 1 to 8 carbon atoms and / or water, an effect that cracks do not occur in temporary firing can be obtained.
- the polyhydric alcohol in the present invention include ethylene glycol, hexylene glycol, octylene glycol, glycerin, diethylene glycol, triethylene glycol, tetraethylene glycol, and propylene glycol.
- the solution is applied onto a substrate to form a solution thin film of a metal-containing compound.
- the solution coating method conventionally known methods, for example, various methods such as a dipping method, a spin coating method, a spray method, and a brush coating method can be used.
- the substrate various materials and shapes can be used.
- examples of materials include metals and alloys such as nickel, copper, gold, silver, stainless steel, and hastelloy, and metal oxides such as alumina, zirconia, titania, strontium titanate, lanthanum aluminate, neodymium gallate, and yttrium aluminate. Ceramics such as materials and silicon carbide are used, and the shape thereof is adopted regardless of the curved surface or flat surface. For example, any shape such as a plate shape, a linear shape, a coil shape, a fiber shape, a woven fabric shape, and a tubular shape can be used. Adopted.
- the support may be porous.
- a metal film or a metal oxide film such as zirconia or ceria is previously formed on the surface of the base material as an intermediate layer. Can be formed.
- This step is a step of heating and baking the metal-containing compound film formed on the substrate as described above, and converting the film into a film made of barium carbonate, rare earth metal oxide and copper oxide. .
- a temperature of 400 to 650 ° C., preferably 450 to 550 ° C. is adopted.
- the equivalent film thickness is preferably 500 nm or more. Hold for 150-300 minutes and then cool down.
- the firing atmosphere an atmosphere of air, oxygen, nitrogen, argon or the like is employed.
- This step is a step of reacting barium carbonate, rare earth metal oxide, and copper oxide while baking the film formed in the preliminary baking step to remove carbon dioxide from the barium carbonate.
- this firing step is performed under the condition that the oxygen partial pressure in the atmosphere is 0.01 to 100 Pa, preferably 1 to 20 Pa.
- the condition where the oxygen partial pressure is 0.01 to 100 Pa can be formed by using an inert gas.
- this firing step can be performed under a reduced pressure such that the oxygen partial pressure is 0.01 to 100 Pa, preferably 1 to 20 Pa.
- the decomposition of barium carbonate can be carried out smoothly at a reduced temperature, so that the base material and / or the intermediate layer and Reaction between the composite metal oxides can be substantially avoided.
- the general firing temperature in this step is 650 to 900 ° C. According to the firing conditions as described above in the present invention, it is possible to substantially prevent the reaction between the base material and / or the intermediate layer and the composite metal oxide as conventionally observed.
- the composite metal oxide film formed in the main baking step is oxidized using molecular oxygen to form a composite metal oxide film having superconductivity.
- the oxygen partial pressure in the atmosphere is maintained to be 0.01 to 100 Pa. Therefore, the superconducting properties of the obtained composite metal oxide film are unsatisfactory. It can be converted into an excellent composite metal oxide film.
- the oxidation step for absorbing oxygen is preferably performed at an oxygen partial pressure of 0.2 to 1.2 atm.
- the molecular oxygen pure oxygen or air is used.
- the superconducting properties of the film are adversely affected by the carbon dioxide contained therein, so the carbon dioxide partial pressure in the air is reduced to 1 Pa or less, preferably 0.5 Pa or less by decarboxylation. It is good to adjust.
- This oxidation step is performed at a medium to high temperature, and the reaction between the substrate and / or the intermediate layer and the composite metal oxide can be substantially avoided.
- the temperature of this oxidation step is generally 400 to 900 ° C.
- a superconducting composite metal oxide film having a film thickness of 500 nm or more can be formed on the substrate surface by performing each of the above steps once.
- Example 1 Preparation of temporary fired film
- a commercially available product manufactured by Nippon Kagaku Sangyo Co., Ltd.
- acetylacetonate powder of yttrium, barium and copper is weighed so that the molar ratio of metal components is 1: 2: 3, and these are mixed to obtain a powder mixture. Obtained.
- pyridine and propionic acid were added in amounts until the powder mixture was completely dissolved.
- the concentration of the solution was set to an amount containing 0.2 to 0.3 mmol of rare earth metal species per 1 g of the solution.
- 0.02 to 0.04 ml of ethylene glycol, hexylene glycol, octylene glycol, glycerin, diethylene glycol, triethylene glycol, tetraethylene glycol, or propylene glycol is added as an additive and uniformly added.
- a coating solution was prepared. This solution was applied by spin coating on a sapphire substrate on which cerium oxide was previously deposited. This coating film was pre-baked to remove organic components by raising the temperature to 500 ° C. in an air stream containing water vapor with an oxygen partial pressure of 0.6 atm and a dew point of 24 ° C. Each additive used is shown in Table 1 below.
- Comparative Example 1 Preparation of pre-baked film
- a pre-fired film was prepared in the same manner as in Example 1 except that 0.02 ml of polyethylene glycol (400 manufactured by Wako Pure Chemical Industries, Ltd.) was added as an additive. There were thin cracks. The result confirmed with the optical microscope about the comparative example 1 is shown in FIG.
- Example 2 Production of superconductor film
- the substrate was a yttria-stabilized zirconia single crystal substrate on which cerium oxide was vapor-deposited in advance and the additive was any one of hexylene glycol, octylene glycol, and tetraethylene glycol.
- a fired film was produced.
- membrane after performing this baking process at 760 degreeC in the airflow of oxygen partial pressure 10Pa for 2 hours, oxygen was absorbed at atmospheric pressure and the Y123 superconductor film
- the Y123 film thus prepared was examined with the naked eye and observed with an optical microscope at 40 to 1000 times, no cracks were generated. The results are shown in Table 3 below.
- FIG. 3 shows the results of X-ray diffraction of a film prepared using hexylene glycol as an additive.
- the criteria for determining the state of the film are the naked eye and the optical microscope VH7000 manufactured by Keyence, Inc., 40 to 100 times the entire surface of the film, and further 100 to 1000 times, several points of the film are observed, and cracks are observed. What was not done was defined as “no crack”.
- Example 3 Production of superconductor film
- a Y123 film having an equivalent film thickness of 550 nm was prepared in the same manner as in Example 2 except that the molar ratio of the metal components of yttrium, barium and copper was 1: 2: 3.7. It was found that no cracks were observed by observation with an optical microscope and that a c-axis oriented Y123 film was grown by X-ray diffraction.
- Example 4 Production of superconductor film
- a Y123 film having an equivalent film thickness of 550 nm was prepared in the same manner as in Example 2 except that the molar ratio of the metal components of yttrium, barium and copper was 1: 1.6: 3. It was found that no cracks were observed by observation with an optical microscope and that a c-axis oriented Y123 film was grown by X-ray diffraction.
- Example 5 Production of superconductor film
- a Y123 film having an equivalent film thickness of 550 nm was prepared in the same manner as in Example 2 except that the solvent for dissolving the dried complex was changed to a mixed solvent of n-pentanol and water. It was found that cracks were not observed by optical microscope observation, and that a c123-oriented Y123 film was grown by X-ray diffraction.
- Example 6 Production of superconductor film
- the equivalent film thickness is 550 nm in the same manner as in Example 2 except that the starting material is a commercial product (manufactured by Wako Pure Chemical Industries, Ltd.), yttrium, barium and copper acetate powder, and the solvent is trimethylamine and propionic acid.
- the Y123 film was prepared, it was found that cracks were not observed with the naked eye and optical microscope observation at 40 to 1000 times, and that the c123-oriented Y123 film was grown by X-ray diffraction.
- Example 7 Production of superconductor film
- a Y123 superconductor film having a thickness of 680 nm was prepared in the same manner as in Example 2 except that the substrate was a strontium titanate single crystal substrate on which cerium oxide was vapor-deposited in advance.
- the substrate was a strontium titanate single crystal substrate on which cerium oxide was vapor-deposited in advance.
- the Y123 film thus prepared was examined with the naked eye and observed with an optical microscope at 40 to 1000 times, no cracks were generated. Further, it was found by X-ray diffraction using an X-ray diffractometer that a c-axis oriented film was grown. Further, when the critical current density of the obtained Y123 film was measured by an induction method at a liquid nitrogen temperature, it was 2.1 MA / cm 2 .
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011545237A JP5445982B2 (ja) | 2009-12-09 | 2010-12-09 | 希土類超電導膜形成用溶液およびその製造方法 |
US13/514,139 US8865628B2 (en) | 2009-12-09 | 2010-12-09 | Solution for forming rare-earth superconductive film and production method thereof |
EP10836023.1A EP2511235B1 (en) | 2009-12-09 | 2010-12-09 | Solution for forming rare-earth superconductive film, and method for producing same |
CN201080056222.5A CN102652112B (zh) | 2009-12-09 | 2010-12-09 | 稀土类超导膜形成用溶液及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-279655 | 2009-12-09 | ||
JP2009279655 | 2009-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011071103A1 true WO2011071103A1 (ja) | 2011-06-16 |
Family
ID=44145648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/072104 WO2011071103A1 (ja) | 2009-12-09 | 2010-12-09 | 希土類超電導膜形成用溶液およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8865628B2 (zh) |
EP (1) | EP2511235B1 (zh) |
JP (1) | JP5445982B2 (zh) |
CN (1) | CN102652112B (zh) |
WO (1) | WO2011071103A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012012247A (ja) * | 2010-06-30 | 2012-01-19 | National Institute Of Advanced Industrial Science & Technology | 酸化物超電導薄膜製造用の原料溶液及びその製造方法 |
CN102807372A (zh) * | 2012-08-28 | 2012-12-05 | 西北有色金属研究院 | 一种钆钡铜氧致密膜的制备方法 |
JP2014047100A (ja) * | 2012-08-31 | 2014-03-17 | Toshiba Corp | 酸化物超電導体の製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104795180B (zh) * | 2015-04-07 | 2017-08-11 | 上海大学 | 极低氟mod法快速制备rebco超导膜的方法 |
US11527277B1 (en) | 2021-06-04 | 2022-12-13 | Kepler Computing Inc. | High-density low voltage ferroelectric memory bit-cell |
US11729995B1 (en) | 2021-11-01 | 2023-08-15 | Kepler Computing Inc. | Common mode compensation for non-linear polar material 1TnC memory bit-cell |
US11482270B1 (en) * | 2021-11-17 | 2022-10-25 | Kepler Computing Inc. | Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic |
US12041785B1 (en) | 2022-03-07 | 2024-07-16 | Kepler Computing Inc. | 1TnC memory bit-cell having stacked and folded non-planar capacitors |
US12062584B1 (en) | 2022-10-28 | 2024-08-13 | Kepler Computing Inc. | Iterative method of multilayer stack development for device applications |
US11741428B1 (en) | 2022-12-23 | 2023-08-29 | Kepler Computing Inc. | Iterative monetization of process development of non-linear polar material and devices |
US11765908B1 (en) | 2023-02-10 | 2023-09-19 | Kepler Computing Inc. | Memory device fabrication through wafer bonding |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
JPS6469516A (en) * | 1987-09-08 | 1989-03-15 | Nippon Telegraph & Telephone | Production of oxide powder |
JPH01234305A (ja) * | 1988-03-11 | 1989-09-19 | I M C:Kk | 超伝導性材料及びその製造法 |
JPH0476323A (ja) | 1990-07-16 | 1992-03-11 | Matsushita Seiko Co Ltd | 空気調和機の露受皿 |
JPH0476324A (ja) | 1990-07-17 | 1992-03-11 | Matsushita Electric Ind Co Ltd | 空気調和装置 |
JPH05147941A (ja) * | 1989-12-27 | 1993-06-15 | Agency Of Ind Science & Technol | 超電導体の製造方法及び超電導体 |
JPH0710732A (ja) | 1993-06-28 | 1995-01-13 | Kobe Steel Ltd | 過酸化物生成防止剤及び紫外線障害防止外用剤 |
JPH07106905A (ja) | 1993-10-06 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 発振子 |
JP2002284526A (ja) * | 2001-03-27 | 2002-10-03 | National Institute Of Advanced Industrial & Technology | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の製造方法。 |
JP2006096577A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Institute Of Technology | 金属酸化物膜、金属酸化物膜の製造方法および成形品 |
JP2008198396A (ja) * | 2007-02-08 | 2008-08-28 | National Institute Of Advanced Industrial & Technology | 超電導酸化物材料の製造方法 |
WO2008115249A2 (en) * | 2006-07-17 | 2008-09-25 | Massachusetts Institute Of Technology | Making high jc superconducting films using polymer-nitrate solutions |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR880009453A (ko) | 1987-01-30 | 1988-09-15 | 원본미기재 | 초전도성 재료와 그 제조방법 |
JPS6465003A (en) | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Superconductive material and production thereof |
JPH01219004A (ja) * | 1988-02-29 | 1989-09-01 | Nisshin Steel Co Ltd | 酸化物系超電導体薄膜の作成方法 |
JPH0710732B2 (ja) | 1991-06-28 | 1995-02-08 | 工業技術院長 | 超電導体の製造方法 |
US6562761B1 (en) | 2000-02-09 | 2003-05-13 | American Superconductor Corporation | Coated conductor thick film precursor |
KR100683186B1 (ko) * | 1999-07-23 | 2007-02-15 | 아메리칸 수퍼컨덕터 코포레이션 | 다층 제품 및 그의 제조방법 |
JP4103025B2 (ja) * | 1999-08-12 | 2008-06-18 | 独立行政法人産業技術総合研究所 | 高周波フィルタおよびその製造方法 |
JP3556586B2 (ja) * | 2000-09-05 | 2004-08-18 | 株式会社東芝 | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
JP3548801B2 (ja) * | 2001-03-27 | 2004-07-28 | 独立行政法人産業技術総合研究所 | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の形成方法。 |
CN1190526C (zh) * | 2003-03-27 | 2005-02-23 | 上海交通大学 | 具有过热性质种膜作籽晶液相外延生长超导厚膜材料 |
WO2006137898A2 (en) | 2004-10-01 | 2006-12-28 | American Superconductor Corp. | Thick superconductor films with improved performance |
JP5415696B2 (ja) * | 2004-10-01 | 2014-02-12 | アメリカン・スーパーコンダクター・コーポレーション | 機能が向上された厚膜超伝導フィルム |
JP4997621B2 (ja) | 2005-09-05 | 2012-08-08 | パナソニック株式会社 | 半導体発光素子およびそれを用いた照明装置 |
US20100015340A1 (en) * | 2008-07-17 | 2010-01-21 | Zenergy Power Inc. | COMPOSITIONS AND METHODS FOR THE MANUFACTURE OF RARE EARTH METAL-Ba2Cu3O7-delta THIN FILMS |
-
2010
- 2010-12-09 JP JP2011545237A patent/JP5445982B2/ja active Active
- 2010-12-09 CN CN201080056222.5A patent/CN102652112B/zh not_active Expired - Fee Related
- 2010-12-09 EP EP10836023.1A patent/EP2511235B1/en not_active Not-in-force
- 2010-12-09 WO PCT/JP2010/072104 patent/WO2011071103A1/ja active Application Filing
- 2010-12-09 US US13/514,139 patent/US8865628B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
JPS6469516A (en) * | 1987-09-08 | 1989-03-15 | Nippon Telegraph & Telephone | Production of oxide powder |
JPH01234305A (ja) * | 1988-03-11 | 1989-09-19 | I M C:Kk | 超伝導性材料及びその製造法 |
JPH05147941A (ja) * | 1989-12-27 | 1993-06-15 | Agency Of Ind Science & Technol | 超電導体の製造方法及び超電導体 |
JPH0476323A (ja) | 1990-07-16 | 1992-03-11 | Matsushita Seiko Co Ltd | 空気調和機の露受皿 |
JPH0476324A (ja) | 1990-07-17 | 1992-03-11 | Matsushita Electric Ind Co Ltd | 空気調和装置 |
JPH0710732A (ja) | 1993-06-28 | 1995-01-13 | Kobe Steel Ltd | 過酸化物生成防止剤及び紫外線障害防止外用剤 |
JPH07106905A (ja) | 1993-10-06 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 発振子 |
JP2002284526A (ja) * | 2001-03-27 | 2002-10-03 | National Institute Of Advanced Industrial & Technology | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の製造方法。 |
JP2006096577A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Institute Of Technology | 金属酸化物膜、金属酸化物膜の製造方法および成形品 |
WO2008115249A2 (en) * | 2006-07-17 | 2008-09-25 | Massachusetts Institute Of Technology | Making high jc superconducting films using polymer-nitrate solutions |
JP2008198396A (ja) * | 2007-02-08 | 2008-08-28 | National Institute Of Advanced Industrial & Technology | 超電導酸化物材料の製造方法 |
Non-Patent Citations (8)
Title |
---|
"Source: Solvent Handbook", 1963, SANGYO TOSHO |
A. GUPTA, APPL. PHYS. LETT., vol. 52, 1988, pages 2077 |
ARAKI ET AL., CRYOGENIC ENGINEERING, vol. 35, 2000, pages 516 |
ICHIRO MATSUBARA ET AL.: "Preparation of epitaxial YbBa2CU307-6 on SrTi03 single crystal substrates using a solution process", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 38, no. 7A, 1 July 1999 (1999-07-01), pages 727 - 730, XP008157145 * |
JOANNA MCKITTRICK ET AL.: "Chemical synthesis of spun-on thick films of oxide superconductors", THIN SOLID FILMS, vol. 206, 1991, pages 146 - 150, XP008157138 * |
P. C. MCLNTYRE ET AL., J. MATER. RES., vol. 5, 1990, pages 2771 |
See also references of EP2511235A4 |
W. T. WANG ET AL., PHYSICA C, vol. 468, 2008, pages 1563 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012012247A (ja) * | 2010-06-30 | 2012-01-19 | National Institute Of Advanced Industrial Science & Technology | 酸化物超電導薄膜製造用の原料溶液及びその製造方法 |
CN102807372A (zh) * | 2012-08-28 | 2012-12-05 | 西北有色金属研究院 | 一种钆钡铜氧致密膜的制备方法 |
JP2014047100A (ja) * | 2012-08-31 | 2014-03-17 | Toshiba Corp | 酸化物超電導体の製造方法 |
KR101476551B1 (ko) * | 2012-08-31 | 2014-12-24 | 가부시끼가이샤 도시바 | 산화물 초전도체의 제조 방법 및 산화물 초전도체 |
Also Published As
Publication number | Publication date |
---|---|
JP5445982B2 (ja) | 2014-03-19 |
US20120270738A1 (en) | 2012-10-25 |
JPWO2011071103A1 (ja) | 2013-04-22 |
CN102652112A (zh) | 2012-08-29 |
EP2511235B1 (en) | 2019-07-10 |
EP2511235A1 (en) | 2012-10-17 |
US8865628B2 (en) | 2014-10-21 |
CN102652112B (zh) | 2014-09-03 |
EP2511235A4 (en) | 2015-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5445982B2 (ja) | 希土類超電導膜形成用溶液およびその製造方法 | |
JP3548801B2 (ja) | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の形成方法。 | |
JP2009544143A (ja) | 高Jc超伝導膜の製造方法およびそのために使用されるポリマー‐硝酸塩溶液 | |
JP3851948B2 (ja) | 超電導体の製造方法 | |
JP5421561B2 (ja) | 酸化物超電導薄膜の製造方法 | |
JP2008198396A (ja) | 超電導酸化物材料の製造方法 | |
JP5273561B2 (ja) | 超電導膜の製造方法 | |
JP2013235766A (ja) | 酸化物超電導薄膜とその形成方法 | |
JP5729592B2 (ja) | 超電導膜の製造方法並びに該方法により得られる仮焼成膜及び超電導膜 | |
JP5605750B2 (ja) | 酸化物超電導薄膜製造用の原料溶液 | |
JP4154475B2 (ja) | 基板の表面に形成されたエピタキシャル薄膜及びその製造方法 | |
JP3548802B2 (ja) | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の製造方法。 | |
JPH07106905B2 (ja) | 超電導体の製造方法及び超電導体 | |
JP2011195435A (ja) | 超電導膜の製造方法並びに該方法により得られる仮焼成膜及び本焼成膜 | |
JP3507887B2 (ja) | 単結晶基板の表面にエピタキシャル薄膜を形成する方法 | |
JP2011253766A (ja) | 酸化物超電導薄膜の製造方法 | |
JP2013235765A (ja) | 酸化物超電導線材とその製造方法 | |
JP3612556B2 (ja) | アルミナ単結晶基板の表面に形成された超伝導薄膜からなる超伝導体、及びアルミナ単結晶基板の表面に超伝導薄膜を形成する方法 | |
JP2011253768A (ja) | 酸化物超電導薄膜の製造方法 | |
KR100998310B1 (ko) | 유기금속증착용 전구용액 형성방법 및 이를 사용하는초전도 후막 형성방법 | |
JP2010135134A (ja) | Re123超電導薄膜線材の製造方法およびre123超電導薄膜線材 | |
JP5453627B2 (ja) | 内部応力を緩和した酸化物超電導体膜の製造方法 | |
JP2012003962A (ja) | 酸化物超電導薄膜の製造方法 | |
JP4861290B2 (ja) | 超伝導体及びその製造方法 | |
JP4741787B2 (ja) | 高温超電導膜の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080056222.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10836023 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011545237 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010836023 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13514139 Country of ref document: US |