WO2009011356A1 - 計測方法、ステージ装置、及び露光装置 - Google Patents

計測方法、ステージ装置、及び露光装置 Download PDF

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Publication number
WO2009011356A1
WO2009011356A1 PCT/JP2008/062802 JP2008062802W WO2009011356A1 WO 2009011356 A1 WO2009011356 A1 WO 2009011356A1 JP 2008062802 W JP2008062802 W JP 2008062802W WO 2009011356 A1 WO2009011356 A1 WO 2009011356A1
Authority
WO
WIPO (PCT)
Prior art keywords
wst
exposure apparatus
wafer
stage
heads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062802
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Dai Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to KR1020187033093A priority Critical patent/KR20180126088A/ko
Priority to KR1020187007270A priority patent/KR101923356B1/ko
Priority to HK10109940.0A priority patent/HK1143632B/en
Priority to KR1020107003290A priority patent/KR101488048B1/ko
Priority to KR1020177003435A priority patent/KR101843699B1/ko
Priority to KR1020157029261A priority patent/KR101706884B1/ko
Priority to EP08791197.0A priority patent/EP2177867B1/en
Priority to KR1020137018085A priority patent/KR101538245B1/ko
Priority to EP17178713.8A priority patent/EP3246755B1/en
Priority to EP18194495.0A priority patent/EP3447582A1/en
Priority to KR1020157001127A priority patent/KR101614666B1/ko
Priority to KR1020137018086A priority patent/KR101538246B1/ko
Priority to CN200880025096A priority patent/CN101755188A/zh
Priority to JP2009523655A priority patent/JPWO2009011356A1/ja
Publication of WO2009011356A1 publication Critical patent/WO2009011356A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
PCT/JP2008/062802 2007-07-18 2008-07-16 計測方法、ステージ装置、及び露光装置 Ceased WO2009011356A1 (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
KR1020187033093A KR20180126088A (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020187007270A KR101923356B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
HK10109940.0A HK1143632B (en) 2007-07-18 2008-07-16 Stage apparatus, exposure apparatus, exposure method and device manufacturing method
KR1020107003290A KR101488048B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020177003435A KR101843699B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020157029261A KR101706884B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
EP08791197.0A EP2177867B1 (en) 2007-07-18 2008-07-16 Stage apparatus, exposure apparatus, exposure method and device manufacturing method
KR1020137018085A KR101538245B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
EP17178713.8A EP3246755B1 (en) 2007-07-18 2008-07-16 Exposure apparatus, exposure method and device manufacturing method
EP18194495.0A EP3447582A1 (en) 2007-07-18 2008-07-16 Measuring method, stage apparatus, and exposure apparatus
KR1020157001127A KR101614666B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020137018086A KR101538246B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
CN200880025096A CN101755188A (zh) 2007-07-18 2008-07-16 测量方法、载台装置、及曝光装置
JP2009523655A JPWO2009011356A1 (ja) 2007-07-18 2008-07-16 計測方法、ステージ装置、及び露光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007187649 2007-07-18
JP2007-187649 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011356A1 true WO2009011356A1 (ja) 2009-01-22

Family

ID=40259688

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062802 Ceased WO2009011356A1 (ja) 2007-07-18 2008-07-16 計測方法、ステージ装置、及び露光装置

Country Status (9)

Country Link
US (5) US9316917B2 (enExample)
EP (7) EP2818926B1 (enExample)
JP (8) JPWO2009011356A1 (enExample)
KR (8) KR101538246B1 (enExample)
CN (7) CN104111588B (enExample)
HK (2) HK1201943A1 (enExample)
SG (3) SG175598A1 (enExample)
TW (7) TWI497218B (enExample)
WO (1) WO2009011356A1 (enExample)

Cited By (9)

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JP2013170852A (ja) * 2012-02-17 2013-09-02 Mitsutoyo Corp 光電式エンコーダ
US9383328B2 (en) 2011-03-22 2016-07-05 Carl Zeiss Smt Gmbh Lithography apparatus
JP2018063446A (ja) * 2007-07-18 2018-04-19 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2018074306A1 (ja) * 2016-10-17 2018-04-26 株式会社ニコン 露光システム及びリソグラフィシステム
US10191393B2 (en) 2015-03-23 2019-01-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
JP2019530894A (ja) * 2016-10-04 2019-10-24 エーエスエムエル ネザーランズ ビー．ブイ． アライメントシステムの断熱化
CN110931412A (zh) * 2019-10-15 2020-03-27 北京烁科中科信电子装备有限公司 一种高精度高效率的硅片定向装置
CN111272089A (zh) * 2020-03-03 2020-06-12 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
CN120212822A (zh) * 2025-05-28 2025-06-27 山西富兴通重型环锻件有限公司 一种法兰盘孔位检测装置

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JP2009026862A (ja) * 2007-07-18 2009-02-05 Canon Inc 光学素子位置決めシステム、投影光学系及び露光装置
JP2009036637A (ja) * 2007-08-01 2009-02-19 Sony Corp 変位測定装置
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8493547B2 (en) * 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP3731258A1 (de) * 2009-09-22 2020-10-28 EV Group E. Thallner GmbH Vorrichtung zum ausrichten zweier substrate
NL2006913A (en) 2010-07-16 2012-01-17 Asml Netherlands Bv Lithographic apparatus and method.
NL2007155A (en) * 2010-08-25 2012-02-28 Asml Netherlands Bv Stage apparatus, lithographic apparatus and method of positioning an object table.
JP4846051B1 (ja) * 2010-11-05 2011-12-28 株式会社ナナオ センサユニット作動機構及び当該センサユニット作動機構を備えた液晶表示装置
NL2008272A (en) * 2011-03-09 2012-09-11 Asml Netherlands Bv Lithographic apparatus.
NL2008980A (en) 2011-07-11 2013-01-14 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
EP2777066B1 (en) 2011-11-09 2019-01-09 Zygo Corporation Thermally stable optical sensor mount
WO2013100061A1 (ja) * 2011-12-28 2013-07-04 株式会社ニコン エンコーダ、エンコーダ用スケールの製造方法、エンコーダの製造方法及び駆動装置
JP6251559B2 (ja) * 2013-02-28 2017-12-20 株式会社ニューフレアテクノロジー 試料支持装置
WO2015050109A1 (ja) * 2013-10-02 2015-04-09 株式会社ニコン エンコーダ用スケール、エンコーダ、駆動装置及びステージ装置
JP6492086B2 (ja) * 2013-12-21 2019-03-27 ケーエルエー−テンカー コーポレイション マスク上の構造体の位置を測定し、それによってマスク製造誤差を決定する方法
JP2016043453A (ja) * 2014-08-25 2016-04-04 株式会社ディスコ 加工装置
NL2015639A (en) 2014-11-28 2016-09-20 Asml Netherlands Bv Encoder, position measurement system and lithographic apparatus.
TWI702474B (zh) 2015-02-23 2020-08-21 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
CN107250915B (zh) 2015-02-23 2020-03-13 株式会社尼康 测量装置、光刻系统及曝光装置、以及管理方法、重迭测量方法及组件制造方法
JP6649636B2 (ja) 2015-02-23 2020-02-19 株式会社ニコン 計測装置、リソグラフィシステム及び露光装置、並びにデバイス製造方法
HK1246870A1 (zh) * 2015-03-31 2018-09-14 株式会社尼康 曝光装置、平板显示器的制造方法、器件制造方法及曝光方法
CN111929992A (zh) * 2015-09-30 2020-11-13 株式会社尼康 移动体装置、曝光装置、平面显示器的制造方法、及元件制造方法、以及物体的移动方法
US9630836B2 (en) 2015-09-30 2017-04-25 Mems Drive, Inc. Simplified MEMS device fabrication process
US9617142B1 (en) 2015-09-30 2017-04-11 Mems Drive, Inc. MEMS grid for manipulating structural parameters of MEMS devices
US10199912B2 (en) * 2016-01-26 2019-02-05 Woodward Hrt, Inc. Torque motor with mechanical flexures establishing armature-to-field gaps
CN112965345B (zh) * 2016-09-30 2023-05-16 株式会社尼康 移动体装置、曝光装置、平板显示器的制造方法
WO2018141713A1 (en) * 2017-02-03 2018-08-09 Asml Netherlands B.V. Exposure apparatus
US10866529B2 (en) * 2017-02-10 2020-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10600614B2 (en) * 2017-09-29 2020-03-24 Hitachi High-Technologies Corporation Stage device and charged particle beam device
DE102017217967A1 (de) * 2017-10-09 2019-04-11 Sieb & Meyer Ag Verfahren zur Bestimmung von Positionsfehlern von Bohrungen und Sicherung des Bohrprozesses
JP6493481B2 (ja) * 2017-10-18 2019-04-03 株式会社ニコン 露光装置及びデバイス製造方法
CN108010873B (zh) * 2017-12-29 2024-04-19 无锡固电半导体股份有限公司 一种晶圆自动扩晶机
TWI699559B (zh) * 2018-01-16 2020-07-21 美商伊路米納有限公司 結構照明成像系統和使用結構化光來創建高解析度圖像的方法
JP7051455B2 (ja) * 2018-01-16 2022-04-11 キオクシア株式会社 パターン形成装置および半導体装置の製造方法
US10281268B1 (en) 2018-04-20 2019-05-07 Seagate Technology Llc Automated and accurate high-throughput slider-level flatness inspection
JP7056411B2 (ja) * 2018-06-29 2022-04-19 株式会社リコー 読取装置および造形装置
CN112703451B (zh) * 2018-09-12 2025-03-25 西默有限公司 用于气体放电台的本体的量测
CN111380464B (zh) * 2018-12-28 2021-05-07 上海微电子装备（集团）股份有限公司 一种光栅尺的安装装置、安装方法、光栅测量系统及光刻机
JP2020112605A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 露光装置およびその制御方法、および、物品製造方法
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