TW586139B - Dynamic flow pattern controller for uniformity control and the method thereof - Google Patents

Abstract

A dynamic flow pattern controller for uniformity control and the method thereof is described. A gas distribution apparatus with gas injection holes is connected to a flow divider. The flow of each gas injection holes is adjusted by the flow divider to control the gas flow pattern. A gas exhausting control apparatus and a flow control valve are correspondingly used to adjust the contribution and speed when the gas arrive the surface of wafer, so that high uniformity can be obtained to be free of side-to-side problem.

Description

V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a manufacturing method, 2 to a semiconductor device and a control method thereof, 2 = dynamic fluid pattern control of uniformity control " field to enhance the etching of an etching machine Evenness. And especially the device and its control technology; when the process technology evolves to deep body II, the required integrated circuit can be manufactured. When the product CD) must also be more and more critical control (Critical Di_si0n; control by Xu. Xi ~ moxibustion *, the process control is also more difficult. Line width dimension method and sheet material; = control 'Such as the fab's equipment, process methods and original expertise will affect the critical secondary system = boundary, several important parts of the inch include sweeping: machine I Danshi, West / Footwood and Inner Testing Technology, etc. . And the photoresist processing system's main influence factors in the change of CD are the uniformity of the photoresist thickness and the control of the average thickness: month 'ί 5', the average sentence of temperature [raw 'time delay after coating and development, " ,, =, Etc., will have a great impact on the control of the critical size. Progress, the control of the shadow process parameters has a considerable impact on the control of the critical size. Traditionally, in the lithography and etching process, Firstly, a photoresist layer is coated on the wafer, and then exposure and development are performed to form the required circuit pattern in the photoresist layer for critical dimension measurement using a scanning electron microscope (SEM). Optical microscope 586139 Ming (2) (Optical Microscope; 0M) checks (After after development

Develop Inspect ion; ADI) to confirm whether the pattern on the photomask is completely transferred to the photoresist. Then, an etching process is performed, and the patterned photoresist layer is used as a material layer under the mask to perform pattern transfer. Then, the critical dimension measurement after etching is performed by SEM, and the inspection after etching is performed with an optical microscope ( After Etch Inspection. Among them, the CD value of ADI directly affects the change of the CU value of ... i. Because 'wafer loading and positioning in the lithography process, edges and another edge (side-to- The asymmetry of the side) causes the phenomenon of defocus during the exposure process, which affects the CD value, so that the line width cannot be further reduced due to the limitation of the CD value. In the surname engraving process, the same will happen. The problem of asymmetry between the edge and the other edge 'affects the CD value after AEI. In addition, the inspection after AEI often results in' the degree of etching between the wafer center and the edge is different, causing the etching pattern to appear in the crystal. The difference between the CD value of the center of the circle and the edge results in the difference between the center and the edge (Ceenter-to-edge), which greatly limits the reduction of the CD value and the uniformity distribution. SUMMARY OF THE INVENTION Therefore, one of the purposes of this > device is to provide a dynamic fluid pattern control and favorable edge ^ " fluid pattern of gas distribution when the whole circle is touched, so that the center of the wafer is the same as the edge. , To improve the uniformity of the CD value distribution, to avoid the problem of the difference between the central adjustment gas. Moreover, with the measurement result after the ADI ’°, the fluid pattern of the etiquette distribution compensates for the edge and

586139

The uniformity of the deviation caused by the asymmetry of one edge to make the CD value distribution high. Controlling and avoiding the difference from another object of the present invention is to provide a dynamic fluid pattern controller. The ejection amount of the central and peripheral gas can achieve a uniform gas distribution. Its CD will

| -ST | # / UQL Another object of the present invention is to provide a dynamic fluid pattern controller, which can achieve a certain level of square volume distribution control in a single direction of the gas flow rate, so as to compensate for the lithography process. The CD values are unevenly distributed by the edges and another 25 symmetry problem. '' Another object of the present invention is to provide a method for controlling the uniformity of the etching pattern. After the ADI inspection, the aforementioned dynamic fluid pattern controller is equipped with a built-in fluid pattern database to control the radial direction during the etching. "Gas distribution" to achieve the remaining effect of the uniform sentence, and into Ei view, feedback the effect of the etch to the database, so that the uniformity of the CD value can be optimized. 2. From a viewpoint, the present invention provides a dynamic fluid pattern controller for controlling: gas distribution in an etching machine. The controller includes at least a fluid separator, a gas distribution device, and a gas emission control device. Among them, the l, two separators are used to subdivide a gas into a plurality of airflows. The gas distribution device 2 is connected to the fluid separator. The gas distribution device has a plurality of central gas centers, holes, and a plurality of surrounding gas nozzles. Each nozzle corresponds to a gas and the center gas nozzle is aligned with the wafer Center. The gas emission control system is wound around the wafer ’This gas emission control device has a plurality of partitions

V. Description of the invention (4) Each segment of the segment 'has a critical dimension pattern flat angle from another point of view, which is based on a coin carving machine. Then the material library is used to determine the etching dynamic fluid pattern control. The present invention uses the above control method to unevenly distribute the boundary values in the lithography process. For example, the block that increases the CD value distribution corresponds to the gas channel. The invention provides this method to the next root crystal. The round water wafer gas controller, the dynamic flow of the surrounding gas is precisely controlled, and the control of the surrounding gas through the partition area is followed by the following steps. The size pattern corresponds to the gas ratio, and the last step. It also reduces the asymmetry of the etching effect to the minimum. This can not only achieve uniformity. In the foregoing, controlling an eclipse includes less

Erosion control is performed according to the critical volume distribution to control the CD edge and the other edge to blow out the CD, and the airflow of each block. The method is to measure the wafer to determine the water distribution pattern of the wafer. This parameter is used to control the effect of the worm with the name of the engraved wafer, and compensate for the CD caused by the problem. ^ Insect engraving and the other side to the wafer diameter body pattern control body emission control ♦ Insect engraving embodiment The present invention provides the use of dynamic fluid volume control, the edge of the avoidance caused by tilt tilt. The present invention is to achieve the use of dynamic flow separator and gas Distributing database, wafer money engraving device, to achieve the eccentricity and edge etch unevenness, taking advantage of the asymmetry of the edge and the horizontal controller, using the manufacturing device, the operation method of the gas distribution uniformity, and The unevenness of the gas flow in the horizontal direction or a single horizontal side can compensate the inability problem in the lithography process. The gas distribution control of the direction, the special gas distribution device is connected to the fluid component and is matched with the built-in gas pattern component pattern to achieve the improvement of the CD value score 586139 V. Description of the invention (5) The uniformity of the distribution. Please refer to FIG. 1, which shows a schematic cross-sectional view of the structure of the etching machine of the present invention. # 刻 机 台 100 is a barrel shape, which mainly includes an upper electrode plate and a wafer electrostatic base (Electro -Static Chuck (ESC) 310, a plasma is formed between the two, and the semiconductor wafer 2000 on the pedestal 3 100 is dry-etched, and the semiconductor wafer 2000 is, for example, a silicon wafer. The electrode plate 110 is provided with a Transform Coupled Plasma (TCP) coil 120, and the gas distribution device 130 of the present invention is provided at the center of the electrode plate 110, and is connected to an external gas supply device to provide a response. The indoor plasma forms the required reaction gas. The reference etching machine 100 includes, for example, a TCP 2300 machine from Lam, a DPS2 machine from AMAT, and an ECR machine from Hitachi. Around the ESC 310 and between the reaction chamber walls 102, a gas emission control device 3 2 0 according to the present invention and a screen 330 for filtering gas impurities are provided. A gas flow control valve 34 and a gate valve 350 are provided under the ESC 310 to control the overall gas exhaust rate in the reaction chamber. The gas in the reaction chamber is ejected downward from the gas distribution device 130 to form a plasma and react with the wafer surface to perform the etching process. The reacted gas passes through the gas emission control device 3 2 0 and the screen 3 3 0 The reaction chamber is withdrawn from the flow control valve 3 4 0 and the gate valve 3 50. In addition, a temperature controller 36 is set under ESC 3100 to adjust the temperature required for wafer 200 reaction. FIG. 2A illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device 30 of the present invention is an adjustable gas nozzle 130a ′. The gas system ejected is from the gas provided by the fluid separator 40.

Page 11 586139 V. Description of the invention (6). On the bottom surface 142a of the gas nozzle 130a, a plurality of gas injection holes 1 4 4a, such as four, are arranged in a ring manner, and are mainly used to provide the gas required for the reaction in the wafer 200. The side wall of the gas nozzle 130a near the bottom is provided with a plurality of side wall spray holes 1 3 2 a, for example, 8 holes, which are equally distributed on the side wall in a circular manner. The number of side wall nozzle holes 1 3 2a is determined by the number of blocks equally divided by the wafer, so it can be more than 12, 16, or 32. The supplied gas is subdivided into several small airflows 410 in the fluid separator 4 0 0, and each air flow 4 10 passes through the channel in the gas nozzle 130a, corresponding to the gas injection holes 1 4 4 a and the side wall injection holes 1 3 2 a. Therefore, the gas discharge flow rate reaching each of the gas injection holes 132a and 144a is independently controlled. Therefore, with the gas nozzle 130a of the present invention, the gas flow rate in each direction angle can be controlled independently, so that the gas jets in each direction angle at the edge of the wafer 200 are independent. Taking 8 sidewall spray holes 1 32a as an example, the wafer 2000 can be divided into 8 blocks, and each block has a sidewall spray hole 32a, and the corresponding area is controlled by the sidewall spray hole 132a. Block gas flow. FIG. 2B illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device 130 of the present invention is a gas distribution plate 130b, which is installed below the electrode plate 110 (as shown in FIG. I). The gas system ejected is from the gas provided by the fluid separator 400. . On the bottom surface 142b of the gas distribution plate 13 (^ b), a plurality of gas nozzle holes are provided at the center, for example, eight, which are arranged in a symmetrical square shape, which is mainly used to provide wafers. 2 0 0 in 1 =: gas 2 is provided with a plurality of gas injection holes 132b around the bottom surface i42b of the gas distribution plate i3〇b, such as 8 holes, in a ring manner

586139 V. Description of the invention (7) It is evenly distributed around the bottom surface 142b. The number of design of the gas injection holes 132b is determined by the number of blocks equally divided by the wafer, so it can also be a number such as 1, 2, 16 or 32. The supplied gas is subdivided into several small airflows 410 in the fluid separator 400, and each airflow 410 corresponds to the central gas injection hole 144b and the surrounding gas injection holes 132b through the channels in the gas distribution plate 130b. Therefore, the gas discharge flow rate of each of the gas injection holes 132b and 144b is independently controlled. Therefore, with the gas distribution plate of the present invention, the gas flow in each direction angle can be controlled independently, so that the gas jets in each direction angle of the 2000 edge of the wafer are independent. Taking 8 surrounding gas nozzle holes 1 3 2 b as an example, the wafer 2000 can be divided into 8 blocks, and each block corresponds to a gas nozzle hole 132b, and thus the gas nozzle holes 丨32b controls the gas flow of the corresponding block. In addition to the gas distribution device 130, the present invention also provides a gas emission control device 320 correspondingly to control the gas flow rate of each block. Fig. 3 is a schematic plan view of the structure of a preferred embodiment of the gas emission control device of the present invention. Please refer to FIG. 丨 and FIG. 3 at the same time. In this embodiment, the gas emission control device of ^ f is a grid fan plate 32 °, and the grid fan plate “Ο” is not placed on the outer edge of the ESC 310. It is a ring-shaped structure located between Esc 31 ° and outer wall 102, which is generally made of anti-corrosive metal or other anti-materials. The grid-shaped fan plate 320a corresponds to the gas distribution device. The side wall nozzle holes 132a (as shown in FIG. 2A) or the gas nozzle holes 132b (as shown in FIG. 2β) are divided into a plurality of ventilation blocks 322, for example, 8 blocks. Each ventilation block

Page 13 586139 V. Description of the invention (8) '~ ----- 322 are all vent holes, which are used to control the exhaust flow of the block. Each vent block 322 has a lower baffle 324 and an upper block. The baffle plates 326, ^ are arranged in a staggered manner. The size of the gap between the baffle plates 324 and 326 is used to control the exhaust rate in this zone 1. Each block 322 is provided with a control system (not shown), such as a stepping motor, which controls the relative positions of the baffles 3 24 and 326, and this controls the size of the exhaust passage. ′ According to another preferred embodiment of the gas emission control device according to the present invention, the emission control device may also be a valve (Va 1 ve) control device. The valve is located on the outer edge of ESC 310 and is located between ESC 31 ° and outer wall 102. The structure is ring-shaped. It is generally made of anti-corrosive metal or other anti-corrosive materials. The valve control device corresponds to the side wall injection holes 132a (as shown in FIG. 2A) or the gas injection holes 132b (as shown in FIG. 2β) on the gas distribution device 13, and is subdivided into several ventilation blocks, for example, 8 zones Piece. Each ventilation block is a ventilation channel, which is used to control the exhaust flow of the block, and each ventilation block is controlled by an independently operated valve, and the size of the valve is used to control the exhaust of this block. rate. Each block is equipped with a control system control valve to control the size of the exhaust passage. ° In the present invention, the gas distribution device 130 and the gas discharge device 32 are used, and the circle 200 can be divided into multiple blocks, and the gas flow of each block is controlled independently. The uneven distribution of CD values caused by the asymmetry of the other edge. Moreover, by independently controlling the center of the gas distribution device 130 (such as the gas injection hole 14 "in Fig. 2A and the gas injection hole 144b in Fig. 28) and the surroundings (such as the side wall injection holes 1323 and the first in Fig. 2A) The gas flow rate of the gas injection hole 132b) in the 2β diagram, and adjust the ratio between the two.

V. Description of Invention (9) Example can avoid the problem of uneven etching of wafer center and edge. In order to understand the operation method and advantages of the present invention more clearly, the two implementations of the gas distribution device of Fig. 28 and the gas emission control device of Fig. 3 are used to cooperate with each other to illustrate the outline steps of the operation. First, after the 51 lithography step, the wafer is inspected by ADI, and the critical dimension pattern of the wafer at this time is measured with the built-in or external optical CD measurement device or SEM ('Step > Step 5 1 0). Based on the critical dimension pattern, carefully compare the tendency of pattern unevenness, and judge the direction and angle of wafer tilt (step 52). Based on the built-in database 5 3 0 of the fluid case and the measured tilt direction and angle,

The gas flow rate of each of the nozzle holes 144a and 132a in the gas nozzle 130a, and the opening size corresponding to each block in the grid fan plate 320a, control the distribution ratio of the gas and the fluid pattern (step 54). Then, an etching step is performed (step 550). After the etching is completed, an AEI inspection is performed (step 56), and the results of the inspection are fed back to the database 53 for comparison and analysis, and the various parameter values in the database 53 are corrected. : As mentioned above, the present invention provides a dynamic fluid map for uniformity control. The controller and its control method can solve the inevitable problems in the lithography process.

Control ΐ ΐ The problem of asymmetry of an edge. By controlling the fluid pattern of the j breast during the etching process, it can accurately compensate for the decrease in uniformity caused by the difference between the edge and the other edge, so that the wafer after the money engraving can obtain a small CD value and a high CD value Evenness. Determining 1: ifayue has been disclosed as above with a preferred embodiment, but it is not intended to clarify any skilled person within the scope, without departing from the spirit and scope of the present invention, it can be used as a variety of Changes and retouching, so the protection scope of the present invention

Page 15 586139 V. Description of Invention (ίο) The definition of the scope of patent application attached shall prevail. mm 586139 Brief description of the diagram Brief description of the diagram 2 makes the above and other objects, features, and advantages of the present invention more obvious and easy to understand. A preferred embodiment is given below in conjunction with the accompanying drawings to explain in detail Fig. 1 is a drawing showing the knot of an etching machine of the present invention. Fig. 2A is a drawing showing a gas distribution diagram of the present invention. Schematic cross-section. Conclusion of a Preferred Embodiment FIG. 2B is a schematic diagram showing a planar structure of a gas distribution device of the present invention. Fig. 3 of another preferred embodiment is a schematic diagram showing a planar structure of the gas emission control pen of the present invention. Fig. 4 of the preferred embodiment of Xia is a flowchart showing the operation of the fluid pattern controller of the present invention. Explanation of the symbols of the drawing 100 Etching machine 102 Reaction chamber 110 Electrode plate 120 Coil 130 Gas distribution device 130a Gas nozzle 130b Gas distribution plate 132a Side wall spray hole 13 2b Gas spray hole 142a Bottom

586139 Brief description of the drawing 142b bottom surface 144a gas nozzle 144b gas nozzle 200 wafer 310 electrostatic base 320 gas emission control device 320a grid fan plate 322 block 3 2 4 lower baffle

326 Upper baffle 330 Mesh screen 340 Fluid control valve 350 Gate valve 360 Temperature control device 400 Fluid separator 410 Air flow 510 ~ 560 Step

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Claims (1)

586139 VI. Scope of patent application " ------- 1 · A dynamic fluid pattern controller for controlling the body distribution in an etching machine, including at least: τ integrated milk separator, which is used to separate a gas Subdivided into a plurality of airflows; a milk distribution device connected to the fluid separator, the gas distribution device has a plurality of first gas injection holes and a plurality of second gas injection holes, and A plurality of first gas injection holes and a second gas injection hole, the gas injection holes are aligned at the center of a wafer; and a gas emission control device surrounding the wafer, the gas emission control arrangement has a plurality of Each of the divided blocks corresponds to the second gas injection holes, and each of the divided blocks has a gas channel to control the air flow passing through the divided blocks. 2. The controller according to item 1 of the scope of patent application, wherein a flow control valve is further provided at the bottom of the wafer to control the exhaust rate in the etching machine. 3. The controller according to item 1 of the scope of the patent application, wherein the gas distribution device is a gas nozzle, and the second gas injection holes are arranged on the side wall of the gas nozzle and arranged in an equidistant ring shape. 4 · The controller according to item 1 of the scope of the patent application, wherein the gas distribution device is a gas distribution plate, and the second gas injection holes are arranged in an equidistant circle around the bottom surface of the gas distribution plate. . Page 19: 586139 6. Control the device of item i in the scope of patent application as a fan-shaped grid plate. The upper slot plate uses the above and below controllers, wherein each partition of the gas emission has a lower baffle and a baffle. The plate controls the size of the gas channel. L 4 The controller according to item 1 of the scope of the patent application, wherein the gas control device is a valve control device, and each partition block has a valve, and the size of the gas channel is controlled by the valve. 8 · A dynamic fluid pattern controller for controlling the volume f distribution in an etching machine, including at least: 'a fluid separator for subdividing a gas into a plurality of gas streams; a gas nozzle connected to the fluid separation Device, the gas nozzle has a plurality of first gas injection holes and a plurality of second gas injection holes, and the air streams correspond to the first gas injection holes and the second gas injection holes, and the first gas injection holes are Aligned at the center of a wafer, the second gas nozzles are arranged in a circular ring at an equal distance on the side wall of the gas nozzle; and a gas emission control device surrounds the wafer, and the gas emission control I The device has a plurality of partition blocks corresponding to the second gas injection holes. Each partition block has a gas channel to control the t-flow passing through the partition block. ' 586139 6. Scope of patent application 9. The controller according to item 8 of the scope of patent application, further comprising a flow control valve 'at the bottom of the wafer to control the exhaust rate in the etching machine. 10. The controller according to item 8 of the scope of the patent application, wherein the wafer is placed on an electrostatic base, and the gas emission control device surrounds the electrostatic base. 11. A dynamic fluid pattern controller for controlling a gas distribution in an etching machine, including at least: a fluid separator for subdividing a gas into a plurality of gas streams; A gas distribution plate is connected to the fluid separator. The gas distribution plate has a plurality of first gas injection holes and a plurality of second gas injection holes, and the air streams correspond to the first gas injection holes and the second gas. Nozzles, the first gas nozzles are aligned at the center of a wafer, and the second gas nozzles are arranged in a circular circle at an equal interval on the bottom surface of the gas distribution plate; and a gas emission control The device surrounds the wafer. The gas emission control device has a plurality of partition blocks corresponding to the second gas injection holes. Each partition block has a gas channel to control the air flow passing through the partition block. 0 12 · The controller according to item 11 of the scope of patent application, further comprising a flow control valve provided at the bottom of the wafer to control the etching machine Page 21 586139 6. Exhaust rate within the scope of patent application. 13. The controller according to item 11 of the scope of patent application, wherein the wafer is placed on an electrostatic base, and the gas emission control device surrounds the electrostatic base. 14. A dynamic fluid pattern controller for controlling the gas distribution in a engraving machine, including at least: a fluid separator for subdividing a gas into a plurality of air streams; A gas distribution device is connected to the fluid separator. The gas distribution device has a plurality of first gas injection holes and a plurality of second gas injection holes. The air streams correspond to the first gas injection holes and the second gas injection holes. A gas nozzle, the first gas nozzle is aligned at the center of a wafer; and a fan-shaped grid surrounding the wafer, the fan-shaped grid has a plurality of divided blocks corresponding to the first Two gas nozzles, each partition block has a gas channel and a lower baffle plate and an upper baffle plate, and the size of the gas channel is adjusted by the upper and lower baffle plates to control the air flow passing through the partition block. 15. The controller according to item 14 of the scope of patent application, further comprising a flow control valve provided at the bottom of the wafer to control the exhaust rate in the etching machine. 16. The controller according to item 14 of the scope of patent application, wherein the wafer is placed on an electrostatic base, and the fan-shaped grid plate surrounds the periphery of the electrostatic base. Page 22 586139 VI. The scope of application for patents covers 17 gas distribution, a fluid separation type dynamic fluid at least a container, a gas distribution device having a plurality of first gas flow systems corresponding to a gas nozzle system, a valve controlling several divided blocks with The size of a gas is controlled by the alignment devices, blocks, and body channels through a pattern controller for controlling / etching the machine. It contains: for subdividing a gas into a plurality of air streams; connected to the fluid separator The gas distribution device body spray holes and a plurality of second gas spray holes, the first gas spray holes and the second gas spray holes, the center of the first wafer, and the valve surrounding the wafer, the valve The control device has a plurality of second gas injection holes, and each of the partitions and a valve uses the valve to adjust the gas flow in the gas channel and the partition. 18 · The crying ambassador as described in item 17 of the scope of the patent application-the bottom of the noodles also includes a flow control device: theft, and the exhaust rate in the circle. To control the etching machine, as described in item 17 of the scope of the patent application, the pot is placed around a pedestal made by Jinglei JL, and it is placed around a 5 yen yen system. On the landlord, and the valve control device is surrounded by the electrostatic base 20. A 14 engraving method includes at least the following; 3 2 control method ’is used for-etching machine, the side Page 23 586139 VI. Measure the patent scope of the wafer _ Lin cry σ + 'Boundary size pattern; According to the unbounded size figure Ann, V # Yue m 4 ^ pattern, determine one of the wafer water bills for translation · Using the horizontal angle and flat angle of the child yen to determine a gas distribution pattern database ^ lice distribution ratio of one of the wafers; and a step of engraving. 21. The critical size pattern as described in item 20 of the scope of patent application includes the use of a sweeping cat-type electron ... to measure the 22. The control method as described in item 20 of the scope of patent application, wherein the horizontal angle includes the horizontal tilt Direction and a horizontal tilt angle. 23. The control method as described in item 20 of the scope of patent application, wherein the gas control ratio is controlled by a dynamic fluid controller. 24. The control method as described in item 20 of the scope of patent application, wherein after performing the last name engraving step, it further comprises performing a post-touch inspection and feeding back data to the gas distribution pattern database. Page 24