WO2003096421A1 - Dispositif a semi-conducteur et son procede de fabrication, et dispositif electronique - Google Patents

Dispositif a semi-conducteur et son procede de fabrication, et dispositif electronique Download PDF

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Publication number
WO2003096421A1
WO2003096421A1 PCT/JP2003/006020 JP0306020W WO03096421A1 WO 2003096421 A1 WO2003096421 A1 WO 2003096421A1 JP 0306020 W JP0306020 W JP 0306020W WO 03096421 A1 WO03096421 A1 WO 03096421A1
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WO
WIPO (PCT)
Prior art keywords
region
semiconductor device
metal silicide
silicide layer
manufacturing
Prior art date
Application number
PCT/JP2003/006020
Other languages
English (en)
French (fr)
Inventor
Takashi Nagano
Yasushi Morita
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to US10/483,882 priority Critical patent/US7235835B2/en
Priority to KR1020047000526A priority patent/KR101053323B1/ko
Priority to JP2004508506A priority patent/JP4470734B2/ja
Publication of WO2003096421A1 publication Critical patent/WO2003096421A1/ja
Priority to US11/705,349 priority patent/US7683414B2/en
Priority to US11/705,519 priority patent/US9748289B2/en
Priority to US12/362,346 priority patent/US7884407B2/en
Priority to US15/673,045 priority patent/US10319756B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
PCT/JP2003/006020 2002-05-14 2003-05-14 Dispositif a semi-conducteur et son procede de fabrication, et dispositif electronique WO2003096421A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/483,882 US7235835B2 (en) 2002-05-14 2003-05-14 Semiconductor device and its manufacturing method, and electronic device
KR1020047000526A KR101053323B1 (ko) 2002-05-14 2003-05-14 반도체 장치와 그 제조 방법, 및 전자 기기
JP2004508506A JP4470734B2 (ja) 2002-05-14 2003-05-14 半導体装置とその製造方法、並びに電子機器
US11/705,349 US7683414B2 (en) 2002-05-14 2007-02-12 Semiconductor device, its manufacturing method and electronic apparatus thereof
US11/705,519 US9748289B2 (en) 2002-05-14 2007-02-12 Semiconductor device, its manufacturing method and electronic apparatus thereof
US12/362,346 US7884407B2 (en) 2002-05-14 2009-01-29 Semiconductor device, its manufacturing method and electronic apparatus thereof
US15/673,045 US10319756B2 (en) 2002-05-14 2017-08-09 Semiconductor device, its manufacturing method and electronic apparatus thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-138638 2002-05-14
JP2002138638 2002-05-14

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US10/483,882 A-371-Of-International US7235835B2 (en) 2002-05-14 2003-05-14 Semiconductor device and its manufacturing method, and electronic device
US10483882 A-371-Of-International 2003-05-14
US11/705,349 Division US7683414B2 (en) 2002-05-14 2007-02-12 Semiconductor device, its manufacturing method and electronic apparatus thereof
US11/705,519 Division US9748289B2 (en) 2002-05-14 2007-02-12 Semiconductor device, its manufacturing method and electronic apparatus thereof

Publications (1)

Publication Number Publication Date
WO2003096421A1 true WO2003096421A1 (fr) 2003-11-20

Family

ID=29416873

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/006020 WO2003096421A1 (fr) 2002-05-14 2003-05-14 Dispositif a semi-conducteur et son procede de fabrication, et dispositif electronique

Country Status (6)

Country Link
US (5) US7235835B2 (ja)
JP (1) JP4470734B2 (ja)
KR (1) KR101053323B1 (ja)
CN (1) CN100392858C (ja)
TW (1) TWI249843B (ja)
WO (1) WO2003096421A1 (ja)

Cited By (21)

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JP2005340475A (ja) * 2004-05-26 2005-12-08 Sony Corp 固体撮像装置
JP2006120711A (ja) * 2004-10-19 2006-05-11 Toshiba Corp 固体撮像装置
JP2006196493A (ja) * 2005-01-11 2006-07-27 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006196769A (ja) * 2005-01-14 2006-07-27 Sony Corp 半導体装置及びその製造方法
JP2006253316A (ja) * 2005-03-09 2006-09-21 Sony Corp 固体撮像装置
JP2007059881A (ja) * 2005-07-26 2007-03-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008041958A (ja) * 2006-08-07 2008-02-21 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2008252032A (ja) * 2007-03-30 2008-10-16 Sony Corp 固体撮像素子及びその製造方法
US7645692B2 (en) 2006-11-27 2010-01-12 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2010056516A (ja) * 2008-08-01 2010-03-11 Sony Corp 固体撮像装置、その製造方法および撮像装置
CN101853867A (zh) * 2009-03-31 2010-10-06 索尼公司 固态成像装置及其制造方法和电子设备
US7847847B2 (en) 2005-01-27 2010-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for CMOS image sensor with a plurality of capacitors
JP2011082426A (ja) * 2009-10-09 2011-04-21 Canon Inc 固体撮像装置
US8115154B2 (en) 2008-08-01 2012-02-14 Sony Corporation Solid-state imaging device, method of producing the same, and imaging device
JP2012146989A (ja) * 2012-02-20 2012-08-02 Canon Inc 光電変換装置及び撮像システム
US8728853B2 (en) 2009-04-24 2014-05-20 Renesas Electronics Corporation Solid-state image sensing device and method of manufacturing the same
US9331110B2 (en) 2010-01-28 2016-05-03 Sony Corporation Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus
US9373658B2 (en) 2011-02-09 2016-06-21 Canon Kabushiki Kaisha Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus
JP2016154191A (ja) * 2015-02-20 2016-08-25 キヤノン株式会社 半導体装置の製造方法
KR20170103682A (ko) * 2016-03-04 2017-09-13 에스아이아이 세미컨덕터 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
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JP4859045B2 (ja) * 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器
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JP5592210B2 (ja) * 2010-09-09 2014-09-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5826672B2 (ja) 2012-02-29 2015-12-02 株式会社東芝 イメージセンサ及びその製造方法
JP2015142072A (ja) 2014-01-30 2015-08-03 株式会社東芝 半導体装置
JP6346488B2 (ja) * 2014-04-21 2018-06-20 キヤノン株式会社 半導体装置、固体撮像装置、それらの製造方法およびカメラ
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JP6484513B2 (ja) * 2014-10-08 2019-03-13 株式会社テクノロジーハブ 画像センサ
CN105514130B (zh) * 2014-10-14 2019-04-12 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器的制造方法
KR102316160B1 (ko) * 2014-12-22 2021-10-26 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
JP6711597B2 (ja) * 2015-12-01 2020-06-17 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、及びそれを有する撮像システム
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JP6917737B2 (ja) * 2017-03-13 2021-08-11 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置の製造方法
CN109727864A (zh) * 2017-10-30 2019-05-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN108269816A (zh) * 2018-01-19 2018-07-10 德淮半导体有限公司 一种降低cmos图像传感器白点缺陷的方法
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JP2021044542A (ja) 2019-09-05 2021-03-18 パナソニックＩｐマネジメント株式会社 撮像装置
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US10319756B2 (en) 2019-06-11
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US20180026063A1 (en) 2018-01-25
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US7235835B2 (en) 2007-06-26
US20090134436A1 (en) 2009-05-28
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US7683414B2 (en) 2010-03-23
US7884407B2 (en) 2011-02-08

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