WO2002045832A1 - Structure permeable a l'hydrogene - Google Patents
Structure permeable a l'hydrogene Download PDFInfo
- Publication number
- WO2002045832A1 WO2002045832A1 PCT/JP2001/010596 JP0110596W WO0245832A1 WO 2002045832 A1 WO2002045832 A1 WO 2002045832A1 JP 0110596 W JP0110596 W JP 0110596W WO 0245832 A1 WO0245832 A1 WO 0245832A1
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- WIPO (PCT)
- Prior art keywords
- hydrogen
- palladium
- permeable
- permeable structure
- substrate
- Prior art date
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- 238000000034 method Methods 0.000 title abstract description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 113
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 99
- 239000001257 hydrogen Substances 0.000 claims abstract description 99
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 40
- 239000012528 membrane Substances 0.000 claims description 39
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 239000011148 porous material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 66
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- 150000002431 hydrogen Chemical class 0.000 description 13
- 238000007733 ion plating Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000000446 fuel Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910001260 Pt alloy Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- JRTYPQGPARWINR-UHFFFAOYSA-N palladium platinum Chemical compound [Pd].[Pt] JRTYPQGPARWINR-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- -1 silicon nitride Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
- B01D67/0039—Inorganic membrane manufacture
- B01D67/0072—Inorganic membrane manufacture by deposition from the gaseous phase, e.g. sputtering, CVD, PVD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/10—Supported membranes; Membrane supports
- B01D69/105—Support pretreatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/10—Supported membranes; Membrane supports
- B01D69/106—Membranes in the pores of a support, e.g. polymerized in the pores or voids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/10—Supported membranes; Membrane supports
- B01D69/108—Inorganic support material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/12—Composite membranes; Ultra-thin membranes
- B01D69/1213—Laminated layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/0215—Silicon carbide; Silicon nitride; Silicon oxycarbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0223—Group 8, 9 or 10 metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0223—Group 8, 9 or 10 metals
- B01D71/02231—Palladium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/024—Oxides
- B01D71/025—Aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/50—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
- C01B3/501—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by diffusion
- C01B3/503—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by diffusion characterised by the membrane
- C01B3/505—Membranes containing palladium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2256/00—Main component in the product gas stream after treatment
- B01D2256/16—Hydrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2323/00—Details relating to membrane preparation
- B01D2323/10—Specific pressure applied
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2323/00—Details relating to membrane preparation
- B01D2323/12—Specific ratios of components used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2323/00—Details relating to membrane preparation
- B01D2323/28—Pore treatments
- B01D2323/286—Closing of pores, e.g. for membrane sealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2323/00—Details relating to membrane preparation
- B01D2323/35—Use of magnetic or electrical fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2325/00—Details relating to properties of membranes
- B01D2325/04—Characteristic thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S55/00—Gas separation
- Y10S55/05—Methods of making filter
Definitions
- the present invention relates generally to a hydrogen permeable structure and a method for producing the same, and more particularly to a hydrogen permeable structure in which a hydrogen permeable film is formed on a porous substrate and a method for producing the same. is there.
- Hydrogen gas is used as fuel for fuel cells, etc., and is industrially produced by a gaseous fuel conversion method.
- hydrogen gas is produced by reforming steam.
- the reformed gas contains carbon monoxide and dioxide as secondary components. Contains carbon and the like. If this reformed gas is used as it is as fuel for a fuel cell, for example, the performance of the cell will be degraded. For this reason, it is necessary to purify the reformed gas to remove secondary components other than hydrogen gas and obtain high-purity hydrogen gas.
- the hydrogen permeable membrane is used by forming it on a porous support or substrate.
- Japanese Patent Application Laid-Open No. 11-2676477 discloses that the thickness of a porous support made of stainless steel or ceramics such as alumina and silicon nitride is increased by the ion plating method.
- a hydrogen permeable structure having a hydrogen permeable film such as a Pd film or an Nb film of about 0.1 to 20 ⁇ m has been proposed.
- Japanese Patent Application Laid-Open No. H11-2868785 describes that a Pd metal and a metal alloying with Pd are alternately formed on the surface of a porous support by an electroless plating method or an ion plating method.
- a hydrogen permeable structure has been proposed in which a Pd alloy film is formed as a hydrogen permeable film by heat treatment after multi-layering.
- Japanese Patent Application Laid-Open No. 4-3499226 discloses that silica gel having an average pore diameter of 1 ° to 30 A within pores of an inorganic porous material of LOOOOA, Alumina gel with 15 to 3 OA or silica with average pore size of 10 to 2 OA There has been proposed a hydrogen gas separation membrane that supports a gel and has a thin film containing palladium as a hydrogen permeable membrane on its surface.
- Japanese Patent Application Laid-Open No. H10-28850 discloses that a base material made of porous ceramics or porous glass, a first layer stacked on the base material, A hydrogen separation structure has been proposed in which a second layer made of Pd or a Pd alloy is provided as a conductive film, and the first layer is formed of a material having a coefficient of thermal expansion between the base material and the second layer. .
- the first layer relieves the stress applied between the base material and the second layer when the hydrogen separation structure is exposed to an atmosphere with high temperature fluctuation, and prevents the second layer from peeling from the base material. To prevent.
- JP-A-11286785 or JP-A-4-3499626 discloses a method for forming a porous support on the surface of a porous support.
- a structure in which a hydrogen-permeable film is formed is disclosed, when the hydrogen-permeable structure is used in an atmosphere under various conditions, the hydrogen-permeable film peels off, and there is a problem in durability.
- the hydrogen separation structure disclosed in Japanese Patent Application Laid-Open No. H10-28850 discloses a heat-transfer between the porous substrate and the hydrogen-permeable membrane.
- a layer formed of a material having an expansion coefficient is interposed between the porous substrate and the hydrogen-permeable membrane.
- an object of the present invention is to provide a hydrogen permeable structure that can more effectively prevent peeling of a hydrogen permeable film and thereby has improved durability, and a method of manufacturing the same.
- a hydrogen permeable structure includes a base material containing porous ceramics, and palladium (P d) and at least one type other than palladium formed on the base material. And a hydrogen permeable membrane having a hydrogen solubility at a predetermined temperature smaller than that of palladium alone!
- hydrogen dissolution amount weight 0/0
- the hydrogen permeable structure of the present invention has a hydrogen permeable membrane in which the amount of dissolved hydrogen at a predetermined temperature is smaller than that of palladium alone, the hydrogen permeation structure of the conventional palladium simple substance can be used in the operating temperature range including the predetermined temperature.
- the amount of hydrogen dissolved in the permeable metal film can be reduced as compared with the structure in which the permeable metal film is formed. Therefore, the amount of expansion of the crystal lattice of palladium metal, that is, the amount of expansion of the film can be suppressed. Therefore, the compressive stress of the film caused by the expansion can be reduced, and the stress applied to the interface between the film and the substrate can be reduced. As a result, physical deterioration such as peeling and cracking of the hydrogen-permeable film can be significantly reduced, and the durability of the hydrogen-permeable structure can be increased.
- the predetermined temperature is not less than 200 ° C. and not more than 700 ° C.
- At least one element other than palladium included in the hydrogen-permeable membrane is platinum (Pt).
- the hydrogen permeable membrane contains palladium and platinum, and the content of platinum is 5% by mass or more and 15% by mass or less. Increasing the content of platinum can reduce the amount of hydrogen dissolved in the membrane, while lowering the hydrogen gas permeation performance (hydrogen gas permeation rate). Therefore, in order to increase the hydrogen gas transmission performance of a hydrogen-permeable membrane made of palladium alone and to increase the durability of the hydrogen-permeable structure by reducing the amount of hydrogen dissolved in the membrane, a palladium
- the content of platinum in a hydrogen-permeable membrane containing platinum and platinum is 5 to 15 mass. It is preferably in the range of / 0 .
- the porous ceramic constituting the base material is preferably silicon nitride (Si 3 N 4 ).
- silicon nitride is excellent in strength, fracture toughness, wear resistance, chemical resistance, and heat resistance, so that the durability of the hydrogen-permeable structure of the present invention can be further enhanced.
- the porous substrate preferably has pores on the surface, and further includes a porous oxide layer formed so as to close the pores. As a result, the surface of the substrate is flattened in a state where the pores on the surface of the substrate are closed by the porous oxide layer, so that the hydrogen-permeable membrane is formed with a pinhole on the surface of the substrate.
- the oxide layer aluminum oxide (A 1 2 0 3), that comprises at least one selected from the group consisting dioxide divorced (S I_ ⁇ 2) and zirconium oxide (Z R_ ⁇ 2)
- it is more preferably made of aluminum oxide.
- a substrate containing porous ceramics is prepared, and physical vapor deposition (PVD) is performed on the surface of the substrate.
- PVD physical vapor deposition
- the surface of the substrate is flattened by closing pores on the surface of the substrate with a porous oxide layer, and then a hydrogen-permeable film is formed on the surface of the substrate. preferable.
- the hydrogen-permeable film is formed in an atmosphere having a degree of vacuum of 13.3 Pa (0. I Torr) or less. In this case, it is preferable to apply a potential difference of 400 V or more between the base material and the vaporized raw material to form a hydrogen permeable membrane.
- FIG. 1 is a diagram showing a schematic cross section of a hydrogen gas separation structure as one embodiment of the present invention.
- one embodiment of the hydrogen permeable structure of the present invention is hydrogen
- the gas separation structure is formed by forming an alloy film containing palladium and an element other than palladium as a hydrogen-permeable film 2 on a porous ceramic substrate 1.
- This alloy film has a smaller amount of dissolved hydrogen at, for example, 400 ° C. than the metal film made of palladium alone.
- Dissolution of hydrogen in palladium metal causes the crystal lattice of palladium metal to expand.
- the increase in volume is 2.8 X 1 (T 3 ° m 3. This value and the amount of hydrogen dissolved in the palladium metal film and the force
- the amount of expansion is, for example, significantly larger than the thermal expansion of the palladium metal membrane itself when the hydrogen gas separation structure is used at 400 ° C.
- the amount of hydrogen dissolved in the film is reduced rather than the thermal expansion of the film itself, that is, by suppressing the expansion due to the dissolution of hydrogen in the film.
- the stress applied to the interface between the base material and the film can be reduced, and physical deterioration such as peeling and cracking of the film can be significantly improved.
- any element other than palladium may be included as long as the amount of dissolved hydrogen at a predetermined use temperature is smaller than that of a membrane made of a single element of palladium metal.
- One embodiment is to form a hydrogen permeable membrane by adding platinum to palladium. As an example, at a temperature of 400 ° C, the amount of dissolved hydrogen per 100 g of palladium metal alone is about 15 mg, whereas 90 mass% of palladium and 1 In a mass% palladium-platinum alloy, the amount of dissolved hydrogen per 100 g of alloy is about 8 mg, which is reduced. On the other hand, the palladium metal alone, 2 hydrogen gas permeation rate as a hydrogen gas permeability.
- Palladium-platinum alloy has a hydrogen gas permeation amount of 2.8 cm 3 / cm 2 / min ⁇ cm, and the hydrogen gas permeation performance is also improved.
- the measurement conditions were a temperature of 500 ° C., a supply-side hydrogen pressure of 3.03.975 kPa (3 atm), and a permeation-side hydrogen pressure of OkPa (0 atm).
- the hydrogen permeable film may be composed of a single layer film of palladium and an alloy containing an element other than palladium, or may have a laminated film structure composed of a plurality of layers of the above alloy.
- the thickness of the hydrogen permeable membrane is preferably 10 / im or less, more preferably 1 ⁇ or less.
- a hydrogen-permeable film on the surface of a porous ceramic base material that has been flattened with pores on the surface closed by annealed oxide, silicon dioxide, zirconium oxide, etc. Is preferably reduced. It is particularly preferable that a porous aluminum oxide layer be formed at the portion of the hole on the surface of the flattened substrate. The surface of the pores present at an area ratio of 30 to 70% is covered with a porous anolymium oxide layer, and the ceramic particles are exposed on the other surfaces. The adhesion between the hydrogen permeable film formed on the surface of such a substrate and the substrate is high.
- the hydrogen-permeable membrane does not peel off from the substrate, and a pinhole-free dense state is maintained, so that gases other than hydrogen pass through the hydrogen-permeable membrane. Passage can be extremely reduced, and high-purity hydrogen gas can be obtained.
- the hydrogen permeable film may be formed by any film forming method.
- the hydrogen permeable film may be formed in an atmosphere having a degree of vacuum of 13.3 Pa (0.1 Torr) or less such as an ion printing method and a sputtering method. It is preferably formed by a physical vapor deposition method.
- an arc ion plating method (an arc discharge type ion plating method) is used.
- a film containing palladium has excellent hydrogen permeability.
- the hydrogen permeability of the (100) plane of the palladium crystal is lower than that of other crystal planes.
- a film containing palladium is formed such that the palladium crystal is oriented in the (111) plane, better hydrogen permeation performance can be obtained as compared with a film that is not oriented.
- the potential between the base material and the deposition material In the palladium-containing film formed by giving a difference good hydrogen permeation performance can be obtained because the palladium crystals are oriented in the (111) plane.
- porous ceramic used as the base material of the hydrogen permeable structure of the present invention examples include various oxides such as aluminum oxide and various nitrides such as silicon nitride, but silicon nitride is most preferable in terms of strength and the like. . It is preferable that the silicon nitride has a network-shaped void portion in which the columnar 3_Si 3 N 4 crystal particles are intertwined.
- the porosity of the porous silicon nitride substrate is preferably in the range of 30 to 70%, particularly preferably in the range of 40 to 50%.
- the flexural strength of the porous silicon nitride substrate is preferably in the range of 30 to 45 OMPa, particularly preferably in the range of 200 to 450 MPa.
- a porous silicon nitride sintered body having an average pore diameter of 0.3 ⁇ m was prepared as a base material of the hydrogen permeable structure.
- a dispersion of aluminum oxide particles having an average particle diameter of 0.03 ⁇ in water was applied on the surface of the substrate, and baked at a temperature of 750 ° C. for 1 hour.
- pores on the surface of the substrate were closed with a porous aluminum oxide layer, and the surface of the substrate was flattened.
- An arc ion plating apparatus was used as an apparatus for forming a hydrogen permeable film on the surface of the porous silicon nitride substrate treated in this manner.
- the heat cycle test was performed 100 cycles at a temperature of 400 ° C and room temperature in a (1 atm) hydrogen gas atmosphere. After the test, film peeling inspection by visual observation and film crack inspection by electron microscopy were performed, but no physical deterioration of the film such as peeling or cracking was observed.
- palladium 90 wt%, platinum in the composition of 10 weight 0/0 The amount of hydrogen dissolved per 100 g of the alloy was 8 mg as measured by the method described above. When hydrogen gas at 202.65 kPa (2 atm) is supplied and hydrogen gas at the permeate side is 101.325 kPa (1 atm), the permeation amount of hydrogen gas is 350 ° C. Was 100 cm 3 / cm 2 / min.
- a hydrogen permeable structure was manufactured in the same manner as in Example 1 except that a metal of palladium alone was set as a raw material of a hydrogen permeable film in a target in a chamber of an arc ion plating apparatus.
- a heat cycle test was performed on the obtained hydrogen-permeable structure under the same conditions as in Example 1. After 10 cycles, film peeling inspection by visual observation and crack inspection of the film by electron microscopy were performed, but partial film peeling was visually observed. It was observed that cracks had occurred.
- the dissolved amount of hydrogen per 100 g of metal of palladium alone was 15 mg.
- the amount of permeated hydrogen gas was measured under the same conditions as in Example 1, and found to be 50 cm cm zo min.
- Example 1 As described above, from the comparison between Example 1, Comparative Example 1, and Comparative Example 2, there is a clear relationship between the amount of hydrogen dissolved in the hydrogen-permeable membrane and the durability of the hydrogen-permeable structure, and the present invention Thus, it can be seen that the durability of the hydrogen-permeable structure according to Example 1 was excellent. Also, in Comparative Example 3, a heat cycle test was performed in the air on a hydrogen-permeable structure formed with a hydrogen-permeable film made of palladium metal alone. The effect on the durability of the structure is small, and it can be seen that the expansion of the film due to the dissolution of hydrogen in the film in a hydrogen gas atmosphere is the main cause of the decrease in durability.
- the hydrogen permeable structure of the present invention is suitable for use in obtaining high-purity hydrogen gas for fuel cells and the like.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Combustion & Propulsion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2002547605A JPWO2002045832A1 (ja) | 2000-12-05 | 2001-12-04 | 水素透過構造体とその製造方法 |
EP01999423A EP1342500A4 (en) | 2000-12-05 | 2001-12-04 | HYDROGEN PERMEABLE STRUCTURE |
US10/182,516 US6641647B2 (en) | 2000-12-05 | 2001-12-04 | Hydrogen-permeable structure and method of manufacturing the same |
KR1020027009898A KR100547527B1 (ko) | 2000-12-05 | 2001-12-04 | 수소투과 구조체와 그의 제조방법 |
CA002399145A CA2399145C (en) | 2000-12-05 | 2001-12-04 | Hydrogen-permeable structure and method for preparation thereof |
Applications Claiming Priority (2)
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JP2000369724 | 2000-12-05 | ||
JP2000-369724 | 2000-12-05 |
Publications (1)
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WO2002045832A1 true WO2002045832A1 (fr) | 2002-06-13 |
Family
ID=18839725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2001/010596 WO2002045832A1 (fr) | 2000-12-05 | 2001-12-04 | Structure permeable a l'hydrogene |
Country Status (7)
Country | Link |
---|---|
US (1) | US6641647B2 (ja) |
EP (1) | EP1342500A4 (ja) |
JP (1) | JPWO2002045832A1 (ja) |
KR (1) | KR100547527B1 (ja) |
CN (1) | CN1189237C (ja) |
CA (1) | CA2399145C (ja) |
WO (1) | WO2002045832A1 (ja) |
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JP2004337833A (ja) * | 2003-01-17 | 2004-12-02 | Toshiba Ceramics Co Ltd | 気体分離部材 |
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WO2011071138A1 (ja) * | 2009-12-11 | 2011-06-16 | 住友電気工業株式会社 | シリカ系水素分離材料及びその製造方法、並びにそれを備えた水素分離モジュール及び水素製造装置 |
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- 2001-12-04 CN CNB01804543XA patent/CN1189237C/zh not_active Expired - Fee Related
- 2001-12-04 CA CA002399145A patent/CA2399145C/en not_active Expired - Fee Related
- 2001-12-04 EP EP01999423A patent/EP1342500A4/en not_active Withdrawn
- 2001-12-04 WO PCT/JP2001/010596 patent/WO2002045832A1/ja not_active Application Discontinuation
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CN101585703B (zh) * | 2008-05-21 | 2012-03-21 | 中国科学院大连化学物理研究所 | 一种非对称陶瓷透氢膜的制备方法 |
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JPWO2011071138A1 (ja) * | 2009-12-11 | 2013-04-22 | 住友電気工業株式会社 | シリカ系水素分離材料及びその製造方法、並びにそれを備えた水素分離モジュール及び水素製造装置 |
JP5757243B2 (ja) * | 2009-12-11 | 2015-07-29 | 住友電気工業株式会社 | シリカ系水素分離材料及びその製造方法、並びにそれを備えた水素分離モジュール及び水素製造装置 |
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Also Published As
Publication number | Publication date |
---|---|
CA2399145A1 (en) | 2002-06-13 |
EP1342500A4 (en) | 2006-05-03 |
CN1189237C (zh) | 2005-02-16 |
US6641647B2 (en) | 2003-11-04 |
CA2399145C (en) | 2005-03-29 |
CN1398197A (zh) | 2003-02-19 |
US20030000387A1 (en) | 2003-01-02 |
KR100547527B1 (ko) | 2006-01-31 |
JPWO2002045832A1 (ja) | 2004-04-08 |
KR20020081290A (ko) | 2002-10-26 |
EP1342500A1 (en) | 2003-09-10 |
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