US20010048489A1 - Active matrix substrate, display device, and image sensing device - Google Patents
Active matrix substrate, display device, and image sensing device Download PDFInfo
- Publication number
- US20010048489A1 US20010048489A1 US09/863,266 US86326601A US2001048489A1 US 20010048489 A1 US20010048489 A1 US 20010048489A1 US 86326601 A US86326601 A US 86326601A US 2001048489 A1 US2001048489 A1 US 2001048489A1
- Authority
- US
- United States
- Prior art keywords
- active matrix
- matrix substrate
- pixel electrode
- insulating film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 129
- 239000011159 matrix material Substances 0.000 title claims abstract description 80
- 239000011229 interlayer Substances 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims description 44
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 230000036211 photosensitivity Effects 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 49
- 230000008569 process Effects 0.000 abstract description 35
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 239000010410 layer Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 59
- 239000000463 material Substances 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000000049 pigment Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000011882 ultra-fine particle Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Definitions
- the present invention relates to an active matrix substrate, and flat panel display device and image sensing device using the same.
- a liquid crystal display device holds liquid crystal molecules in between two substrates on which electrodes are formed, and electric signals applied to between the electrodes on the both substrates vary the transmissivity of light coming from back light, by which information is displayed.
- the liquid crystal display devices are thin, light-weighted, and low power consumption, and mounted on such devices as desktop personal information terminal equipment and amusement instruments.
- a prevailing liquid crystal display device is the one of an active matrix type having active elements such as thin-film transistors (hereinafter referred to as TFT).
- TFT thin-film transistors
- FIGS. 7 and 8 are plan views of an active matrix substrate, and FIG. 8 is a cross sectional view of FIG. 7 taken on line 8 - 8 .
- the active matrix substrate of the liquid crystal display device is mainly configured as follows.
- a TFT 14 serving as a switching element
- a gate signal line 12 for controlling the TFT 14 a source signal line 13 connected to the TFT 14 and formed orthogonal to the gate signal line 12 , an interlayer insulating film 28 formed on the TFT 14 , the gate signal line 12 and the source signal line 13 , and a pixel electrode 11 to be connected to the TFT 14 through a contact hole 16 passing through the interlayer insulating film 28 .
- the active matrix substrate of the liquid crystal display device is fabricated by the following process. First, a gate signal line 12 and a capacity line 17 are formed on a light permeable substrate 21 , and a gate insulating film 23 is formed so as at least to cover those lines 12 and 17 . After that, at the place for forming a TFT 14 , there are created a semiconductor layer 24 , a channel protection layer 25 as needed, a source electrode 26 a , and a drain electrode 26 b . Then, there are formed a source signal line 13 to be connected to the source electrode 26 a , and a connection electrode 15 to be connected to the drain electrode 26 b , and thereafter an interlayer insulating film 28 is formed over the entire surface of the substrate.
- connection electrode 15 and the source signal line 13 are, as shown in FIG. 8, formed by laminating a transparent conductive line 27 a and a metal line 27 b.
- the pixel electrode 11 is formed by the following steps. First, the interlayer insulating film 28 and the contact hole 16 are formed, after which a transparent conductive film such as ITO (indium tin oxide) films is formed by a sputter technique and the like. On the transparent conductive film, positive type resist is applied by spin coating method. Next, while alignment with the gate signal line 12 and the source signal line 13 is performed, an exposure mask is set by an exposure device such as steppers, and exposure is made from the upper side. Then, the transparent conductive film is etched in accordance with an exposed pattern to complete the pixel electrode 11 .
- a transparent conductive film such as ITO (indium tin oxide) films is formed by a sputter technique and the like.
- positive type resist is applied by spin coating method.
- an exposure mask is set by an exposure device such as steppers, and exposure is made from the upper side. Then, the transparent conductive film is etched in accordance with an exposed pattern to complete the pixel electrode 11 .
- the above-stated active matrix substrate having pixel electrodes formed on an interlayer insulating film is used not only in flat panel display devices such as liquid crystal display devices but also in flat panel image sensing devices as disclosed for example in “A New Digital Detector for Projection Radiography”, Proc. SPIE, Vol. 2432, pp. 237-249, 1995 by Denny L. Lee, et al.
- dispersion of exposure precision within the substrate causes corresponding dispersion of parasitic capacitance generated in a superposed portion of the pixel electrode 11 and the gate signal line 12 or in a superposed portion of the pixel electrode 11 and the source signal line 13 .
- the dispersion of the parasitic capacitance affects the uniformity of display in display devices. Upon exposure of photo resist especially by a stepper exposing device, the parasitic capacitance shows slight variance per shot of the stepper, resulting in facilitated generation of irregular display per shot.
- an object of the present invention to provide an active matrix substrate which enables, by changing materials of a pixel electrode, to shorten the fabrication process of the pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between the pixel electrodes, and to provide a display device and an image sensing device using the same.
- an active matrix substrate of the present invention comprises:
- source signal lines connected to the switching elements and formed orthogonal to the gate signal lines;
- the pixel electrodes are made from a photosensitive conductive material.
- the pixel electrodes are made from a photosensitive conductive material, so that in the process of patterning the pixel electrodes, the step of etching using photo resist is not required. That is to say, the pixel electrodes can be fabricated by a simple process consisting of applying a conductive material with photosensitivity on the substrate, and performing photo exposure and development. Therefore, the fabrication process of the pixel electrode can be shortened. In addition, vacuum film-forming devices such as sputters as well as etching units for ITO are not required, which enables reduction of equipment investments, decrease of device space required, and increase of working efficiency.
- the pixel electrodes are formed on the interlayer insulating film, which is formed on the switching elements, the gate signal lines, and the source signal lines, so that the pixel electrodes are to be formed in the final fabrication process of the active matrix substrate. Consequently, the material of the pixel electrode does not affect the film-formation process of other parts, which brings about broader selections of materials for the pixel electrode.
- materials with both the organic and inorganic physical properties such as coat-type conductive materials containing an organic component (resin component) can be broadly used.
- the photosensitive conductive material is transparent.
- the pixel electrode is transparent, so that the active matrix substrate according to the embodiment can be used as an active matrix substrate for transmission type display devices.
- the photosensitive conductive material has negative type photosensitivity.
- the photosensitive conductive material is made from photosensitive resin and conductive particles dispersed in the photosensitive resin.
- the photosensitive conductive material can be formed easily. It is also advantageous that the photosensitive resin determining patterning conditions such as pre-bake temperature and light exposure and the conductive particles determining conductivity can be separately optimized.
- indium tin oxide, antimony tin oxide, or zinc oxide as conductive particles provides transparency and electric characteristics required for the pixel electrode.
- the photosensitive conductive material may contain color agents such as pigments. This gives the pixel electrode an additional function as a color filter for color display.
- color agents such as pigments.
- a color filter formation process is required in addition to a fabrication process of the pixel electrode.
- the color filter formation process can be omitted.
- a pixel electrode with a photosensitive conductive material containing color agents such as pigments allows the pixel electrode to function as a color filter as well. This eliminates necessity of forming a color filter on the opposite substrate side like the prior art. Consequently, any displacement, if it is generated between the substrates in the course of sticking the substrates together, will not decrease the aperture ratio of the pixel.
- a flat panel display device and an image sensing device using the active matrix substrate having any one of the above stated configurations.
- This display device and image sensing device also implement the above-mentioned functions and effects.
- FIG. 1 is a plan view showing one pixel on an active matrix substrate according to an embodiment of the present invention
- FIG. 2 is a cross sectional view taken on the line 2 - 2 of FIG. 1;
- FIGS. 3A, 3B and 3 C are schematic views showing fabrication process of the pixel electrode shown in FIGS. 1 and 2;
- FIG. 4 is a cross sectional view showing an active matrix substrate according to another embodiment of the present invention.
- FIGS. 5A and 5B are respectively a perspective view and a circuit diagram schematically showing the configuration of a liquid crystal display device as an example of the flat panel display device according to the present invention.
- FIG. 6 is a perspective view schematically showing the configuration of one example of a flat panel image sensing device according to the present invention.
- FIG. 7 is a plan view showing one pixel on a conventional active matrix substrate
- FIG. 8 is a cross sectional view taken on the line 8 - 8 of FIG. 7;
- FIG. 9 is a cross sectional view showing a conventional active matrix substrate without an interlayer insulating film.
- FIG. 1 is a plan view showing one pixel extracted from the pixels disposed in the shape of a matrix on an active matrix substrate as one example of the present invention
- FIG. 2 is a cross sectional view taken on the line 2 - 2 of FIG. 1. Except that the material and fabrication method of a pixel electrode is different, the active matrix substrate has the same configuration as the prior art shown in FIGS. 7 and 8, so that like component members are designated by like reference numerals.
- the active matrix substrate is composed of: gate signal lines 12 placed on a light permeable substrate 21 along the lower side of a rectangle shown in the plan view and sending signals to a gate of a TFT 14 ; capacity lines 17 placed on the light permeable substrate 21 and positioned crosswise in the center of the rectangle of the plan view; a gate insulating film 23 covering the lines 12 and 17 , and the light permeable substrate 21 ; TFTs 14 serving as switching elements placed on the gate insulating film 23 and positioned lower left corner of the rectangle shown in the plan view; source signal lines 13 placed on the gate insulating film 23 along the left side of the rectangle of the plan view for sending a data signal to a source of the TFT 14 ; an interlayer insulating film 28 for covering the above parts; and pixel electrodes 1 described later connected to the TFT 14 through a contact hole 16 piercing through the interlayer insulating film 28 and through a connection electrode 15 .
- the TFT 14 is made up of a semiconductor layer 24 made from amorphous Si (Silicon) formed on the gate signal line 12 through the gate insulating film 23 , and a source electrode 26 a and a drain electrode 26 b made from n + type amorphous Si formed on the both sides of the semiconductor layer 24 with a channel protection layer 25 interposed therebetween.
- the source signal line 13 and part of the connection electrode 15 are formed by laminating a transparent conductive line 27 a and a metal line 27 b .
- the interlayer insulating film 28 is made from an inorganic insulator such as SiO 2 and SiNx or an organic insulator such as acrylic resin and polyimide resin.
- the pixel electrode 1 characterizing the present invention is formed by applying on the interlayer insulating film 28 a photosensitive transparent resin such as negative acrylic polymerized resin containing 50 to 90 wt % particles (particle size of 0.001 to 0.05 ⁇ m) made from either indium tin oxide (ITO), antimony tin oxide (ATO), or zinc oxide (ZnO) as a photosensitive conductive material.
- a photosensitive transparent resin such as negative acrylic polymerized resin containing 50 to 90 wt % particles (particle size of 0.001 to 0.05 ⁇ m) made from either indium tin oxide (ITO), antimony tin oxide (ATO), or zinc oxide (ZnO) as a photosensitive conductive material.
- the above-configured active matrix substrate is fabricated by the following process.
- a gate signal line 12 and a capacity line 17 are formed on a light permeable substrate 21 , and a gate insulating film 23 is formed so as at least to cover the lines 12 and 17 .
- a semiconductor layer 24 there are formed a semiconductor layer 24 , a channel protection layer 25 as needed, a source electrode 26 a , and a drain electrode 26 b .
- a source signal line 13 there are formed a source signal line 13 to be connected to the source electrode 26 a , and a connection electrode 15 to be connected to the drain electrode 26 b , and thereafter an interlayer insulating film 28 is formed over the entire surface of the light permeable substrate 21 .
- a contact hole 16 is provided in the interlayer insulating film 28 .
- the fabrication process up to this point is identical to that of the prior art shown in FIGS. 7 and 8.
- a coat-type photosensitive transparent conductive material e.g. a material made from transparent photosensitive resin and ultrafine particles of ITO or ATO dispersed in the transparent photosensitive resin, or a material made from transparent photosensitive resin and ultrafine particles of ZnO dispersed in the transparent photosensitive resin as disclosed in Japanese Patent Laid-Open Publication HEI 10-255556
- a coat-type photosensitive transparent conductive material is applied uniformly over the entire surface of the substrate by spin coating method, and dried at the temperature of 80° C. to 100° C. for 5 to 15 minutes.
- the dried photosensitive transparent conductive film is mask-exposed, and developed to obtain a desired shape by using TMAH (tetra methyl ammonium hydroxide) based organic alkaline developing solution. Then, the film is baked at the temperature of 200° C. to 250° C. for 15 to 30 minutes, by which pattern formation of a pixel electrode 1 is implemented and an active matrix substrate is completed.
- TMAH tetra methyl ammonium hydroxide
- the pixel electrode 1 is composed of a photosensitive conductive material, so that in the process of patterning the pixel electrode 1 , the step of etching using photo resist is not necessary. Consequently, the pixel electrode 1 can be fabricated by a simple process consisting of applying a conductive material with photosensitivity on the substrate, and performing mask-exposure and development. Therefore, the fabrication process of the pixel electrode can be shortened.
- vacuum film-creating devices such as sputtering systems as well as etching units for ITO are not necessary, which enables reduction of equipment investments, decrease of device space required, and increase of working efficiency.
- the pixel electrode 1 is formed on the interlayer insulating film 28 which is formed on the gate signal line 12 , source signal line 13 , and the TFT 14 , so that the pixel electrode 1 is to be formed in the final fabrication process of the active matrix substrate. Consequently, the material of the pixel electrode could not affect the film-formation process of other parts, which brings about broader selections of materials for the pixel electrode.
- materials as coat-type transparent conductive materials containing an organic component (resin component) as disclosed in the above-stated Japanese Patent Laid-Open Publication HEI 10-255556 can be broadly used.
- FIG. 9 is a cross sectional view of an conventional active matrix substrate without an interlayer insulating film 28 .
- FIG. 9 is presented to clarify that the configuration shown in FIGS. 1 and 2 in which the interlayer insulating film 28 is provided underneath the pixel electrode 1 is essential for a coat-type transparent conductive material.
- an insulating overcoat 29 made from SiNx or SiO 2 for preventing exposure of the TFT 14 and the source signal line 13 .
- the insulating overcoat 29 is normally formed by plasma CVD method at the temperature of 300° C. or above. Consequently, if a coat-type transparent conductive material containing an organic component (resin component) according to the present invention is used as a material of the pixel electrode 11 which is laminated prior to the insulating overcoat 29 , the coat-type transparent conductive material will degenerate in the formation process of the insulating overcoat 29 .
- the active matrix substrate needs the configuration having an interlayer insulating film 28 underneath the pixel electrode 1 as shown in FIGS. 1 and 2.
- the photosensitive transparent conductive material used as a pixel electrode of the present invention is not limited to a material made from transparent photosensitive resin and ultrafine particles of ITO, ATO or ZnO dispersed therein as described in the above-stated embodiment.
- using such material facilitates impartation of photosensitivity to ITO, ATO or ZnO, and brings about an advantage that the photosensitive resin determining patterning conditions such as pre-bake temperature and light exposure, and the transparent conductive particles determining conductivity can be separately optimized.
- ITO, ATO or ZnO transparent conductive ultrafine particles has an advantage of facilitating implementation of the transparency (visible light transmissivity: 90% or above) and the electric characteristics (value of sheet resistance: 1E5 ⁇ / ⁇ or lower) required for the pixel electrode.
- the photosensitive transparent conductive material is not limited to a coat-type one, but a laminate-type dry film material is also applicable.
- FIGS. 3A to 3 C are schematic views showing the fabrication process of the pixel electrode 1 shown in FIGS. 1 and 2.
- the pixel electrode 1 is fabricated by the following process. It is noted that some layers are omitted in FIGS. 3A to 3 C to simplify the drawings.
- a metallic gate signal line 12 and source signal line 13 (which is not shown in FIG. 3, though changing reference numeral 12 to 13 will indicate the state with the source signal line) formed on the light permeable substrate 21 function as exposure masks, so that the ultraviolet rays are not emitted to the portions where the signal lines 12 are placed.
- Development processing after exposure implements patterning of a pixel electrode 1 as shown in FIG. 3C.
- the back side exposure is performed by using the signal lines 12 , 13 as masks, so that unexposed parts of the photosensitive transparent conductive material just above the signal lines 12 and 13 are removed, by which the pattern of a pixel electrode 1 is formed with the removed parts above the signal lines 12 and 13 as boundaries.
- Performing exposure from the back side of the substrate 21 by using the gate signal line 12 and the source signal line 13 formed on the substrate 21 as exposure masks enables self-aligned pattern formation of a rectangle pixel electrode 1 without practicing alignment.
- dispersion of parasitic capacitance Cw which is generated in a superposed portion W (see FIG. 3C) of the pixel electrode 1 and the gate signal line 12 or the source signal line 13 , can be uniformed in the entire pixel area. Consequently, if the active matrix substrate of the present invention is applied to flat panel display devices, the potential fluctuation of the pixel electrode 1 through the parasitic capacitance Cw is uniformed in all the pixels, which improves uniformity of display. In addition, if the active matrix substrate is applied to flat panel image sensing devices, the potential fluctuation of the pixel electrode 1 with the parasitic capacitance Cw is uniformed in all the pixels, which improves uniformity of photographed images.
- the photosensitive transparent conductive material 2 applied over each signal line is not exposed unless any defect such as open holes are present on the signal lines. Accordingly, unlike the case of mask exposure of conventional positive type photo resist, there is not generated in an unexposed portion a conductive film remain attributed to the presence of dust between pixel electrodes in the process of exposure. Therefore, short-circuit between the pixel electrodes is not produced, which ensures insulation between the pixel electrodes.
- the above exemplified embodiment uses a negative type photosensitive conductive material as a pixel electrode.
- a positive type photosensitive conductive material may be used for solving the problem i) only.
- the following configuration allows the pixel electrode of the active matrix substrate to serve as a color filter.
- FIG. 4 is a cross sectional view of an active matrix substrate according to another embodiment of the present invention.
- the basic configuration thereof is the same as that of the configuration shown in FIG. 2 except the point that a color pixel electrode 30 having a color filter function is substituted for the pixel electrode 1 .
- a coat-type photosensitive color conductive material is used as a color conducting layer which serves as a color pixel electrode 30 . More specifically, there is used a material made from transparent photosensitive resin, conductive ultrafine particles such as ITO, ATO, and ZnO and color agents composed of inorganic or organic materials (e.g. pigments with the particle size of 10 nm or less). The transparent photosensitive resin, conductive ultrafine particles and color agents are blended at appropriate ratio (e.g. weight ratio of 1:1:1) and dispersed. The color pixel electrode 30 is applied evenly over the entire surface of the substrate by spin coating method as in the case of the above-stated pixel electrode 1 . Then, the substrate is dried at the temperature of 80 to 100° C. for 5 to 15 minutes, and subjected to mask exposure and development processing. Thus, the pattern formation of the pixel electrode 30 is completed. It is noted that dyestuffs may be used instead of pigments as color agents.
- the pigments to be contained in the pixel electrode 30 there are prepared three kinds of pigments as a red (R) pigment, a green (G) pigment, and a blue (B) pigment. Corresponding to each pixel, the above-mentioned photo lithography process is repeated three times, by which a RGB color pixel electrode 30 is fabricated.
- the color pixel electrode 30 has additional function as a color filter, so that in producing an active matrix substrate applicable to display devices capable of color display, a color filter formation process which has been required separately from the fabrication process of the pixel electrode is not required.
- the pixel electrode 30 having additional function as a color filter does not require formation of a color filter on the opposite substrate. Consequently, any displacement, if generated between the substrates in the course of sticking the substrates together, will not decrease the aperture ratio of the pixel.
- FIGS. 5A and 5B are, respectively, a perspective view and a circuit diagram showing schematic configuration of a liquid crystal display device as an example of the flat panel display device using an active matrix substrate of the present invention.
- the liquid crystal display device is configured to hold liquid crystals (not illustrated) as display mediums in between an active matrix substrate 40 and an opposite substrate 50 .
- a glass substrate 41 of the active matrix substrate 40 a TFT 42 as a switching element, a pixel electrode 43 formed with the same material as that of the pixel electrode 1 , a gate signal line 44 , a source signal line 45 , an oriented film 46 , and a polarizer 47 .
- the material of the pixel electrode 43 does not contain coloring agents so that the color filter 52 is provided on the side of the opposite substrate 50 .
- the pixel electrode functions as a color filter, so that the color filter 52 provided on the side of the opposite substrate 50 is not necessary.
- the active matrix substrate of the present invention is applicable not only to liquid crystal display devices but also to various flat panel display devices using active matrix substrates (e.g. EL display devices, electrophoretic display devices and so on).
- active matrix substrates e.g. EL display devices, electrophoretic display devices and so on.
- FIG. 6 shows the configuration of a X-ray (or light) image sensing device as one example of a flat panel image sensing device using the active matrix substrate of the present invention.
- a light dielectric film 71 On the active matrix substrate 60 , there is formed a light dielectric film 71 , which generates electric charge in response to X rays (or light). The information on X rays (or light) can be read by using the active matrix substrate 60 .
- a glass substrate 61 on the side of the active matrix substrate 60 a TFT 62 as a switching element, a pixel electrode 63 formed with the same material as that of the pixel electrode 1 , a gate signal line 64 , a source signal line 65 , a charge storage capacity 66 , and an amplifier 67 connected to the source signal line 65 .
- an upper electrode 72 formed on the light dielectric film 71 and a high voltage power supply 73 connected to the upper electrode 72 .
- a pixel electrode of the active matrix substrate is not necessarily required to be transparent. Accordingly, although each of the above-stated embodiments is exemplified by the case of forming a pixel electrode by dispersing transparent conductive particles in photosensitive resin, the present invention is not limited to the embodiments disclosed. According to usage, a pixel electrode may be formed by dispersing nontransparent conductive particles (e.g. metal microparticles and carbon pigments) in photosensitive resin, or formed with photosensitive conducting materials made by providing conductive resin such as polyacetylene with photosensitivity.
- nontransparent conductive particles e.g. metal microparticles and carbon pigments
- the active matrix substrate of the present invention has pixel electrodes made from a photosensitive conductive material, so that the pixel electrodes can be patterned by the simple step of applying a photosensitive conductive material over the substrate and performing mask exposure and development without the step of etching with photoresist. Therefore, fabrication process of the pixel electrode can be shortened, and vacuum film-forming devices such as sputters as well as etching units for ITO are not required, which enables reduction of equipment investments, decrease of device space required, and increase of working efficiency.
- the pixel electrode is formed on the interlayer insulating film, which is formed on the switching element, the gate signal line, and the source signal line, so that the pixel electrode is to be formed in the final fabrication process of the active matrix substrate. Consequently, the material of the pixel electrode does not affect the film-formation process of other parts, which brings about broader selections of materials for the pixel electrode including a coat-type material containing an organic component (resin component).
- the active matrix substrate in one embodiment can be appropriately used as an active matrix substrate for transparent type display devices since the photosensitive conductive material is transparent.
- the photosensitive conductive material has negative type photosensitivity. Therefore, using the gate signal line and the source signal line formed on the substrate as exposure masks and performing exposure from the back side of the substrate enable self-aligned pattern formation of film placed for the pixel electrode and the like on the front side without practicing alignment. As a result, dispersion of parasitic capacitance, which is generated in a superposed portion of the pixel electrode and the gate signal line or in a superposed portion of the pixel electrode and the source signal line, can be uniformed in the entire pixel area, by which the uniformity of display is improved. In addition, a photosensitive conductive material applied over each signal line is not exposed unless any defect such as open holes are present on the signal lines.
- the photosensitive conductive material is made from photosensitive resin and conductive particles dispersed in the photosensitive resin.
- the photosensitive conductive material can be formed easily. It is also advantageous that the photosensitive resin determining patterning conditions such as pre-bake temperature and light exposure and the conductive particles determining conductivity can be separately optimized.
- conductive particles are made from indium tin oxide, antimony tin oxide, or zinc oxide. Therefore, there is provided transparency and electric characteristics required for the pixel electrode.
- the photosensitive conductive material contains coloring agents, which imparts the function of a color filter for color display to the pixel electrode.
- coloring agents which imparts the function of a color filter for color display to the pixel electrode.
- the pixel electrode functioning as a color filter eliminates the problem of displacement between the pixel electrode and a color filter, which could be generated when the color filter is separately fabricated, especially on an opposite substrate. As a result, the problem of decrease in aperture ratio of the pixel attributed to the displacement between the pixel electrode and the color filter is avoidable.
- a flat panel display and an image sensing device having the above functions and effects because they use the active matrix substrate.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Materials For Photolithography (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/748,140 US7075614B2 (en) | 2000-06-02 | 2003-12-31 | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000165848 | 2000-06-02 | ||
JP2000-165848 | 2000-06-02 | ||
JP2001033760A JP3719939B2 (ja) | 2000-06-02 | 2001-02-09 | アクティブマトリクス基板およびその製造方法ならびに表示装置および撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/748,140 Division US7075614B2 (en) | 2000-06-02 | 2003-12-31 | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010048489A1 true US20010048489A1 (en) | 2001-12-06 |
Family
ID=26593218
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/863,266 Abandoned US20010048489A1 (en) | 2000-06-02 | 2001-05-24 | Active matrix substrate, display device, and image sensing device |
US10/748,140 Expired - Fee Related US7075614B2 (en) | 2000-06-02 | 2003-12-31 | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/748,140 Expired - Fee Related US7075614B2 (en) | 2000-06-02 | 2003-12-31 | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
Country Status (5)
Country | Link |
---|---|
US (2) | US20010048489A1 (zh) |
JP (1) | JP3719939B2 (zh) |
KR (1) | KR100442510B1 (zh) |
CN (1) | CN1162745C (zh) |
TW (1) | TWI293398B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1324107A1 (en) * | 2001-12-26 | 2003-07-02 | Eastman Kodak Company | Transparent electric field spreading layer for dispersed liquid crystal coatings |
US20050084805A1 (en) * | 2003-10-20 | 2005-04-21 | Lu-Yi Yang | Method for forming patterned ITO structure by using photosensitive ITO solution |
US20060001825A1 (en) * | 2004-06-30 | 2006-01-05 | Choi Kee S | Liquid crystal display device and manufacturing method thereof |
US20060231882A1 (en) * | 2005-03-28 | 2006-10-19 | Il-Doo Kim | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US20060286737A1 (en) * | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20080117375A1 (en) * | 2000-11-02 | 2008-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US20090073325A1 (en) * | 2005-01-21 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20090108280A1 (en) * | 2007-10-26 | 2009-04-30 | Shiun-Chang Jan | Pixel structure and fabrication method thereof |
US7609332B2 (en) | 2000-09-08 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
CN102749753A (zh) * | 2012-06-11 | 2012-10-24 | 深超光电(深圳)有限公司 | 一种改善偏光片贴附的显示面板 |
GB2508277B (en) * | 2012-11-27 | 2015-03-25 | Lg Display Co Ltd | Thin film transistor array substrate for digital x-ray detector |
US9012918B2 (en) | 2009-03-27 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor |
US10008608B2 (en) | 2008-11-28 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4616565B2 (ja) * | 2004-02-16 | 2011-01-19 | パナソニック株式会社 | 半導体装置およびその製造方法 |
KR101107265B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법과, 그를이용한 액정 패널 및 그 제조 방법 |
JP2007072293A (ja) * | 2005-09-08 | 2007-03-22 | Brother Ind Ltd | 表示媒体 |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
KR101117948B1 (ko) * | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
CN101150093B (zh) * | 2007-11-14 | 2010-07-21 | 友达光电股份有限公司 | 像素结构的制作方法 |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
CN101685803B (zh) * | 2008-09-25 | 2012-12-26 | 北京京东方光电科技有限公司 | 液晶显示装置的阵列基板制造方法 |
US7936039B2 (en) * | 2008-10-20 | 2011-05-03 | Teledyne Scientific & Imaging, Llc | Backside illuminated CMOS image sensor with photo gate pixel |
TWI613489B (zh) | 2008-12-03 | 2018-02-01 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
EP2406826B1 (en) * | 2009-03-12 | 2017-08-23 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
TWI485781B (zh) * | 2009-03-13 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及該半導體裝置的製造方法 |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
KR101351419B1 (ko) * | 2010-11-12 | 2014-01-15 | 엘지디스플레이 주식회사 | 평판 표시장치의 제조 장비와 그 제조 방법 |
KR101960796B1 (ko) * | 2012-03-08 | 2019-07-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 표시 기판의 제조 방법 및 표시 기판 |
TW201411448A (zh) * | 2012-09-03 | 2014-03-16 | Wintek Corp | 觸控面板 |
WO2014070719A1 (en) * | 2012-10-30 | 2014-05-08 | Carestream Health, Inc. | Charge injection compensation for digital radiographic detectors |
CN103456747A (zh) * | 2013-09-11 | 2013-12-18 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104155814A (zh) * | 2014-08-29 | 2014-11-19 | 昆山龙腾光电有限公司 | 液晶显示装置及其制造方法 |
JP2016149443A (ja) * | 2015-02-12 | 2016-08-18 | 株式会社日立製作所 | 放射線検出素子、放射線検出器および核医学診断装置ならびに放射線検出素子の製造方法 |
KR20180099974A (ko) | 2017-02-27 | 2018-09-06 | 삼성디스플레이 주식회사 | 반도체 장치 |
CN109817693B (zh) | 2019-03-22 | 2020-12-04 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制备方法和显示装置 |
CN111493865B (zh) * | 2020-05-06 | 2021-05-14 | 浙江大学 | 一种可用于多模态观测大脑的皮层脑电电极及阵列 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198377A (en) * | 1987-07-31 | 1993-03-30 | Kinya Kato | Method of manufacturing an active matrix cell |
US5757444A (en) * | 1992-04-28 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5858581A (en) * | 1997-12-15 | 1999-01-12 | Eastman Kodak Company | Method of producing a display having a patternable conductive traces |
US5953084A (en) * | 1995-08-11 | 1999-09-14 | Sharp Kabushiki Kaisha | Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less |
US5976734A (en) * | 1997-06-02 | 1999-11-02 | Canon Kabushiki Kaisha | Preparation process of color liquid crystal display device |
US5990994A (en) * | 1997-10-30 | 1999-11-23 | Eastman Kodak Company | First and second light sensitive conductive layers for use in image displays |
US6088071A (en) * | 1997-02-28 | 2000-07-11 | Kabushiki Kaisha Toshiba | Auxiliary capacitor for a liquid crystal display device |
US6242746B1 (en) * | 1998-02-09 | 2001-06-05 | Sharp Kabushiki Kaisha | Two-dimensional image detecting device and manufacturing method thereof |
US6556271B1 (en) * | 1999-05-14 | 2003-04-29 | International Business Machines Corp. | LCD having color filters on TFT substrate wherein transparent conductive film is patterned using back exposure with UV light filtered to remove wavelengths above 365 nm |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0679122B2 (ja) * | 1986-10-22 | 1994-10-05 | セイコー電子工業株式会社 | 電気光学装置 |
JPS63289533A (ja) * | 1987-05-22 | 1988-11-28 | Oki Electric Ind Co Ltd | 液晶ディスプレイ装置 |
JP2669826B2 (ja) * | 1987-07-17 | 1997-10-29 | 日本ペイント株式会社 | 着色表示装置の製造方法 |
JP2594971B2 (ja) * | 1987-09-09 | 1997-03-26 | カシオ計算機株式会社 | 薄膜トランジスタパネル |
JPH0481820A (ja) | 1990-07-25 | 1992-03-16 | Hitachi Ltd | アクティブマトリクス基板及びこれを用いた液晶表示素子 |
JP2685086B2 (ja) * | 1991-12-09 | 1997-12-03 | 沖電気工業株式会社 | アクティブマトリックス液晶ディスプレイの下基板の製造方法 |
JPH06281958A (ja) * | 1993-03-25 | 1994-10-07 | Sony Corp | 液晶表示装置 |
JP2933879B2 (ja) * | 1995-08-11 | 1999-08-16 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
JP3209317B2 (ja) * | 1995-10-31 | 2001-09-17 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
US5852485A (en) * | 1996-02-27 | 1998-12-22 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for producing the same |
JPH1020321A (ja) | 1996-07-09 | 1998-01-23 | Sharp Corp | 液晶表示装置 |
KR100251096B1 (ko) * | 1996-11-23 | 2000-05-01 | 구본준 | 액정표시장치의 제조방법 및 그 제조방법으로 제조되는 액정표시장치 |
US5913594A (en) * | 1997-02-25 | 1999-06-22 | Iimura; Keiji | Flat panel light source device and passive display device utilizing the light source device |
JP3302600B2 (ja) | 1997-03-14 | 2002-07-15 | 住友大阪セメント株式会社 | 導電体パターン |
KR100272309B1 (ko) * | 1997-06-26 | 2000-11-15 | 김영환 | 초고개구율 액정 표시 소자 및 그의 제조방법 |
JP3410667B2 (ja) * | 1997-11-25 | 2003-05-26 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
JP3376308B2 (ja) * | 1998-03-16 | 2003-02-10 | 株式会社東芝 | 反射板および液晶表示装置 |
JP3361049B2 (ja) * | 1998-03-20 | 2003-01-07 | 株式会社東芝 | 液晶表示装置 |
JP4217308B2 (ja) | 1998-09-24 | 2009-01-28 | 三菱電機株式会社 | 液晶表示装置およびその製造方法 |
-
2001
- 2001-02-09 JP JP2001033760A patent/JP3719939B2/ja not_active Expired - Fee Related
- 2001-05-24 US US09/863,266 patent/US20010048489A1/en not_active Abandoned
- 2001-06-01 KR KR10-2001-0030803A patent/KR100442510B1/ko not_active IP Right Cessation
- 2001-06-01 TW TW090113362A patent/TWI293398B/zh not_active IP Right Cessation
- 2001-06-02 CN CNB011211520A patent/CN1162745C/zh not_active Expired - Lifetime
-
2003
- 2003-12-31 US US10/748,140 patent/US7075614B2/en not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198377A (en) * | 1987-07-31 | 1993-03-30 | Kinya Kato | Method of manufacturing an active matrix cell |
US5757444A (en) * | 1992-04-28 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5953084A (en) * | 1995-08-11 | 1999-09-14 | Sharp Kabushiki Kaisha | Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less |
US6052162A (en) * | 1995-08-11 | 2000-04-18 | Sharp Kabushiki Kaisha | Transmission type liquid crystal display device with connecting electrode and pixel electrode connected via contact hole through interlayer insulating film and method for fabricating |
US6097452A (en) * | 1995-08-11 | 2000-08-01 | Sharp Kabushiki Kaishi | Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching |
US6088071A (en) * | 1997-02-28 | 2000-07-11 | Kabushiki Kaisha Toshiba | Auxiliary capacitor for a liquid crystal display device |
US5976734A (en) * | 1997-06-02 | 1999-11-02 | Canon Kabushiki Kaisha | Preparation process of color liquid crystal display device |
US5990994A (en) * | 1997-10-30 | 1999-11-23 | Eastman Kodak Company | First and second light sensitive conductive layers for use in image displays |
US5858581A (en) * | 1997-12-15 | 1999-01-12 | Eastman Kodak Company | Method of producing a display having a patternable conductive traces |
US6242746B1 (en) * | 1998-02-09 | 2001-06-05 | Sharp Kabushiki Kaisha | Two-dimensional image detecting device and manufacturing method thereof |
US6556271B1 (en) * | 1999-05-14 | 2003-04-29 | International Business Machines Corp. | LCD having color filters on TFT substrate wherein transparent conductive film is patterned using back exposure with UV light filtered to remove wavelengths above 365 nm |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7609332B2 (en) | 2000-09-08 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9798204B2 (en) | 2000-09-08 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8587741B2 (en) | 2000-09-08 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8102480B2 (en) | 2000-09-08 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US20090268111A1 (en) * | 2000-11-02 | 2009-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Liquid Crystal Display Device |
US7554642B2 (en) * | 2000-11-02 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular configuration of pixel electrodes |
US20080117375A1 (en) * | 2000-11-02 | 2008-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8059246B2 (en) | 2000-11-02 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular pixel electrodes configuration |
US7446840B2 (en) | 2000-11-02 | 2008-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular configuration of pixel electrodes |
EP1324107A1 (en) * | 2001-12-26 | 2003-07-02 | Eastman Kodak Company | Transparent electric field spreading layer for dispersed liquid crystal coatings |
CN1303479C (zh) * | 2003-10-20 | 2007-03-07 | 中华映管股份有限公司 | 以感光性铟锡氧化物溶液形成铟锡氧化物图案的方法 |
US20050084805A1 (en) * | 2003-10-20 | 2005-04-21 | Lu-Yi Yang | Method for forming patterned ITO structure by using photosensitive ITO solution |
US7460204B2 (en) * | 2004-06-30 | 2008-12-02 | Lg Display Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
US20060001825A1 (en) * | 2004-06-30 | 2006-01-05 | Choi Kee S | Liquid crystal display device and manufacturing method thereof |
US20090153762A1 (en) * | 2005-01-21 | 2009-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20100171117A1 (en) * | 2005-01-21 | 2010-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20090073325A1 (en) * | 2005-01-21 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, and electric device |
US20060231882A1 (en) * | 2005-03-28 | 2006-10-19 | Il-Doo Kim | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US20060286737A1 (en) * | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20110169002A1 (en) * | 2007-10-26 | 2011-07-14 | Shiun-Chang Jan | Pixel structure |
US7935583B2 (en) | 2007-10-26 | 2011-05-03 | Au Optronics Corp. | Fabrication method of pixel structure |
US20090108280A1 (en) * | 2007-10-26 | 2009-04-30 | Shiun-Chang Jan | Pixel structure and fabrication method thereof |
US10008608B2 (en) | 2008-11-28 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10424674B2 (en) | 2008-11-28 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10985282B2 (en) | 2008-11-28 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US11869978B2 (en) | 2008-11-28 | 2024-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9012918B2 (en) | 2009-03-27 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor |
US9705003B2 (en) | 2009-03-27 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including first and second gate electrodes and stack of insulating layers |
CN102749753A (zh) * | 2012-06-11 | 2012-10-24 | 深超光电(深圳)有限公司 | 一种改善偏光片贴附的显示面板 |
TWI487980B (zh) * | 2012-06-11 | 2015-06-11 | Century Display Shenzhen Co | 一種改善偏光片貼附的顯示面板 |
GB2508277B (en) * | 2012-11-27 | 2015-03-25 | Lg Display Co Ltd | Thin film transistor array substrate for digital x-ray detector |
US9269740B2 (en) | 2012-11-27 | 2016-02-23 | Lg Display Co., Ltd. | Thin film transistor array substrate for digital photo-detector |
Also Published As
Publication number | Publication date |
---|---|
KR20020014989A (ko) | 2002-02-27 |
JP3719939B2 (ja) | 2005-11-24 |
JP2002057317A (ja) | 2002-02-22 |
KR100442510B1 (ko) | 2004-07-30 |
CN1328270A (zh) | 2001-12-26 |
US7075614B2 (en) | 2006-07-11 |
US20040150778A1 (en) | 2004-08-05 |
CN1162745C (zh) | 2004-08-18 |
TWI293398B (en) | 2008-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7075614B2 (en) | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material | |
US7710530B2 (en) | Color filter substrate and display apparatus using the same | |
US6873382B2 (en) | Liquid crystal display device having array substrate of color filter on thin film transistor structure and manufacturing method thereof | |
JP4676390B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
US8107038B2 (en) | Liquid crystal display device with light-shielding color filter pattern and method for fabricating the same | |
US6567150B1 (en) | Liquid crystal display and method of manufacturing the same | |
US5943107A (en) | Color display device | |
US7130001B2 (en) | Method of fabricating array substrate having color filter on thin film transistor structure | |
US6927814B2 (en) | Array substrate for LCD and method of fabricating the same | |
US20060033864A1 (en) | Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate | |
US8045081B2 (en) | Liquid crystal display device with photosensor and method of fabricating the same | |
WO2017124673A1 (zh) | 阵列基板的制作方法及液晶显示面板 | |
KR20080110347A (ko) | 전기 영동 표시 장치 및 그 제조 방법 | |
US20020105603A1 (en) | Liquid crystal display device and method for manufacturing the same | |
JP2000162643A (ja) | 液晶表示装置及びその製造方法 | |
JP2005309147A (ja) | アクティブマトリクス基板及びそれを備えた表示装置 | |
CN110993609A (zh) | 阵列基板及其制备方法 | |
KR100769185B1 (ko) | 액정표시소자 및 그 제조방법 | |
JPH10170950A (ja) | アクティブマトリクス型液晶表示装置及びその製造方法 | |
KR20080057034A (ko) | 액정표시장치 및 그 제조방법 | |
JPH07198614A (ja) | 液晶表示装置及びその欠陥有無検査法 | |
JPH1195202A (ja) | アクティブマトリクス型液晶表示装置 | |
KR101017205B1 (ko) | 칼라 필터가 형성된 박막 트랜지스터 기판 및 그 제조 방법 | |
KR20060120886A (ko) | 액정표시장치, 그에 사용되는 칼라필터기판 및 이의제조방법 | |
JP2000089214A (ja) | 液晶表示装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SHARP KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:IZUMI, YOSHIHIRO;CHIKAMA, YOSHIMASA;MURAI, ATSUHITO;REEL/FRAME:011839/0409 Effective date: 20010515 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |