JP4676390B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP4676390B2 JP4676390B2 JP2006178098A JP2006178098A JP4676390B2 JP 4676390 B2 JP4676390 B2 JP 4676390B2 JP 2006178098 A JP2006178098 A JP 2006178098A JP 2006178098 A JP2006178098 A JP 2006178098A JP 4676390 B2 JP4676390 B2 JP 4676390B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film transistor
- organic semiconductor
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title description 36
- 239000010410 layer Substances 0.000 claims description 187
- 239000004065 semiconductor Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 103
- 239000010408 film Substances 0.000 claims description 42
- 239000011810 insulating material Substances 0.000 claims description 42
- 239000011241 protective layer Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 26
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 26
- 229940068984 polyvinyl alcohol Drugs 0.000 claims description 26
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims description 26
- 239000007769 metal material Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 64
- 239000004973 liquid crystal related substance Substances 0.000 description 35
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000011368 organic material Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/361—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Description
これを克服するために、ゲート電極が半導体層の上部に位置するトップゲートタイプの薄膜トランジスタが提案されている。
図4a〜図4gは、本発明の実施の形態1に係る有機半導体薄膜トランジスタを備えた液晶表示装置用アレイ基板を製造する方法を示す図であって、アレイ基板上の薄膜トランジスタを含む1つの画素領域に対する各製造工程を示す断面図である。
図5a〜図5fは、本発明の実施の形態2に係る有機半導体物質を用いて薄膜トランジスタ及びこれを備えた液晶表示装置用アレイ基板を製造する方法を示す図であって、アレイ基板上の薄膜トランジスタを含む一つの画素領域に対する各製造工程を示す断面図である。本発明の実施の形態2において、実施の形態1と同一に進行される部分については簡単に説明する。
実施の形態1の変形例である実施の形態3を図6a及び図6bを参照して説明する。図6a及び図6bは、本発明の実施の形態3に係る有機半導体薄膜トランジスタを備えたアレイ基板の製造過程の中で、有機半導体層、ゲート絶縁膜及びゲート電極を形成する工程を示す断面図である。
図7は、本発明の実施の形態4に係るトップゲートタイプの薄膜トランジスタを示す断面図である。なお、実施の形態1と同一の構成要素については、同一の図面番号を付与している。
図8は、本発明の実施の形態5に係るトップゲートタイプの薄膜トランジスタを示す断面図である。なお、実施の形態2と同一の構成要素については、同一の図面番号を付与している。
Claims (17)
- 基板上に形成されたソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極の上部に形成され、前記ソース電極の一端と前記ドレイン電極の一端を覆う低分子有機半導体層と、
前記低分子有機半導体層の上部に形成され、有機絶縁物質と無機絶縁物質の二重層でなり、前記低分子有機半導体層の上部面及び側面すべてを覆い、前記ソース電極の他端と前記ドレイン電極の他端を露出させるゲート絶縁膜と、
前記ゲート絶縁膜の上部に形成されるゲート電極と、
前記ゲート電極上部に形成され、前記ドレイン電極の他端を露出させるコンタクトホールを有する保護層と、
前記保護層上部に形成され、前記コンタクトホールを通じて前記ドレイン電極と電気的に連結される画素電極と
を備えることを特徴とする薄膜トランジスタ。 - 前記基板の上部に形成されるバッファ層をさらに備えることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記バッファ層の一部は、前記ソース電極と前記ドレイン電極との間に露出することを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記バッファ層は、無機絶縁物質及び有機絶縁物質のいずれか一つを含むことを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記バッファ層の無機絶縁物質は、窒化シリコン(SiNx)、酸化シリコン(SiOx)、及び酸窒化シリコン(SiOxNy)のいずれか一つを含むことを特徴とする請求項4に記載の薄膜トランジスタ。
- 前記バッファ層の有機絶縁物質は、PVP(poly vinyl pyrrolidone)、PVA(poly vinyl alcohol)、BCB(benzocyclobutene)、及びPMMA(poly methyl meta acrylate)のいずれか一つを含むことを特徴とする請求項4に記載の薄膜トランジスタ。
- 前記ソース電極及び前記ドレイン電極は、金属物質又は有機導電性物質のいずれか一つを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記金属物質は、金(Au)、酸化インジウムスズ(ITO)、ニッケル(Ni)、鉛(Pb)、アルミニウム(Al)、タンタル(Ta)、及びチタニウム(Ti)のいずれか一つを含むことを特徴とする請求項7に記載の薄膜トランジスタ。
- 前記有機導電性物質は、PEDOT−PSS(poly ethylene dioxy thiophene−poly styrene sulfonate)を含むことを特徴とする請求項7に記載の薄膜トランジスタ。
- 前記低分子有機半導体層は、ペンタセン(pentacene:C22H14)を含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ゲート絶縁膜の無機絶縁物質は、酸化シリコン(SiOx)及び窒化シリコン(SiNx)のいずれか一つを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ゲート絶縁膜の有機絶縁物質は、PVA(poly vinyl alcohol)及びポリイミド(polyimide)のいずれか一つを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記基板は、プラスチック、ガラス、及び金属物質のうちいずれか1つを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板の上部にソース電極及びドレイン電極を形成する段階と、
前記ソース電極及び前記ドレイン電極の上部に、前記ソース電極の一端と前記ドレイン電極の一端を覆う低分子有機半導体層を形成する段階と、
前記低分子有機半導体層の上部に形成され、有機絶縁物質と無機絶縁物質の二重層でなり、前記低分子有機半導体層の上部面及び側面すべてを覆い、前記ソース電極の他端と前記ドレイン電極の他端を露出させるゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜の上部にゲート電極を形成する段階と、
前記ゲート電極上部に形成され、前記ドレイン電極の他端を露出させるコンタクトホールを有する保護層を形成する段階と、
前記保護層上部に形成され、前記コンタクトホールを通じて前記ドレイン電極と電気的に連結される画素電極を形成する段階と
を備えることを特徴とする薄膜トランジスタの製造方法。 - 前記基板の上部にバッファ層を形成する段階をさらに備えることを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記ソース電極及び前記ドレイン電極は、200℃以下の温度で形成されることを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記低分子有機半導体層は、蒸着(evaporation)法で形成されることを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050114957A KR100766318B1 (ko) | 2005-11-29 | 2005-11-29 | 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007150240A JP2007150240A (ja) | 2007-06-14 |
JP4676390B2 true JP4676390B2 (ja) | 2011-04-27 |
Family
ID=38086574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006178098A Active JP4676390B2 (ja) | 2005-11-29 | 2006-06-28 | 薄膜トランジスタ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8716696B2 (ja) |
JP (1) | JP4676390B2 (ja) |
KR (1) | KR100766318B1 (ja) |
CN (1) | CN1976084B (ja) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080013300A (ko) * | 2006-08-08 | 2008-02-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101279927B1 (ko) * | 2006-10-16 | 2013-07-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
US7858513B2 (en) * | 2007-06-18 | 2010-12-28 | Organicid, Inc. | Fabrication of self-aligned via holes in polymer thin films |
KR101352110B1 (ko) * | 2007-06-18 | 2014-01-14 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터 및 그의 제조 방법, 이를 이용한평판 표시 장치 |
JP2009021477A (ja) * | 2007-07-13 | 2009-01-29 | Sony Corp | 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 |
KR101396940B1 (ko) * | 2007-12-05 | 2014-05-20 | 엘지디스플레이 주식회사 | 전기영동표시소자에 적용한 유기박막트랜지스터 및 그제조방법 |
GB0802183D0 (en) * | 2008-02-06 | 2008-03-12 | Cambridge Display Technology O | Method of fabricating top gate organic semiconductor transistors |
US8463116B2 (en) | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
JP2010040897A (ja) * | 2008-08-07 | 2010-02-18 | Sony Corp | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器 |
KR101503310B1 (ko) * | 2008-09-17 | 2015-03-17 | 엘지디스플레이 주식회사 | 박막 트랜지스터의 제조방법 |
KR101503311B1 (ko) * | 2008-12-08 | 2015-03-17 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터의 제조방법 |
TW201119110A (en) * | 2009-11-18 | 2011-06-01 | Metal Ind Res & Dev Ct | Fabrication method of organic thin-film transistors |
CN102487041B (zh) * | 2010-12-02 | 2014-07-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和电子纸显示器 |
CN102487044B (zh) * | 2010-12-06 | 2014-11-05 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和电子纸显示器 |
TWI534905B (zh) * | 2010-12-10 | 2016-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置及顯示裝置之製造方法 |
JP5866783B2 (ja) * | 2011-03-25 | 2016-02-17 | セイコーエプソン株式会社 | 回路基板の製造方法 |
CN102779942B (zh) * | 2011-05-24 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种有机薄膜晶体管阵列基板及其制作方法 |
CN102315214A (zh) * | 2011-09-19 | 2012-01-11 | 深圳莱宝高科技股份有限公司 | 阵列基板及其制作方法、使用该阵列基板的显示面板 |
WO2013042562A1 (en) * | 2011-09-22 | 2013-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101963229B1 (ko) * | 2011-12-05 | 2019-03-29 | 삼성전자주식회사 | 접을 수 있는 박막 트랜지스터 |
KR102008902B1 (ko) * | 2012-03-05 | 2019-10-21 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조 방법 |
CN102709237B (zh) * | 2012-03-05 | 2014-06-25 | 京东方科技集团股份有限公司 | 薄膜场效应晶体管阵列基板及其制造方法、电子器件 |
CN102779785A (zh) * | 2012-07-25 | 2012-11-14 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法和显示装置 |
CN104854719B (zh) * | 2012-12-12 | 2018-11-13 | 株式会社大赛璐 | 有机晶体管制造用溶剂或溶剂组合物 |
TW201445794A (zh) * | 2013-05-27 | 2014-12-01 | Wistron Corp | 有機光電元件封裝結構以及封裝方法 |
JP6277625B2 (ja) * | 2013-08-08 | 2018-02-14 | 大日本印刷株式会社 | 有機半導体素子およびその製造方法 |
JP6160361B2 (ja) * | 2013-08-20 | 2017-07-12 | 大日本印刷株式会社 | 有機半導体素子およびその製造方法 |
CN103474437B (zh) | 2013-09-22 | 2015-11-18 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法与显示装置 |
KR102248641B1 (ko) * | 2013-11-22 | 2021-05-04 | 엘지디스플레이 주식회사 | 유기전계 발광소자 |
TWI662709B (zh) * | 2014-04-07 | 2019-06-11 | 緯創資通股份有限公司 | 電子元件及其製作方法 |
JP2015228426A (ja) * | 2014-06-02 | 2015-12-17 | 大日本印刷株式会社 | 配線部材 |
KR102245996B1 (ko) * | 2014-11-13 | 2021-04-30 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 이의 제조방법 |
CN104656332B (zh) * | 2015-01-28 | 2018-11-06 | 上海天马微电子有限公司 | 阵列基板及其制备方法和显示装置 |
KR102457204B1 (ko) * | 2015-08-27 | 2022-10-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
GB2556313B (en) * | 2016-02-10 | 2020-12-23 | Flexenable Ltd | Semiconductor patterning |
CN105633100B (zh) * | 2016-03-17 | 2018-11-02 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列面板及其制作方法 |
CN105826329B (zh) * | 2016-05-09 | 2019-04-02 | 深圳市华星光电技术有限公司 | 一种阵列基板的制作方法、阵列基板及液晶面板 |
CN105826330A (zh) * | 2016-05-12 | 2016-08-03 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
KR101771882B1 (ko) | 2017-06-08 | 2017-08-25 | 엘지디스플레이 주식회사 | 액정표시장치의 어레이 기판 제조방법 |
CN110246848B (zh) * | 2019-05-05 | 2024-04-12 | 福建华佳彩有限公司 | 一种氧化物半导体tft阵列基板及其制作方法 |
FR3098982B1 (fr) * | 2019-07-19 | 2022-04-15 | Isorg | Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication |
CN111584522A (zh) * | 2020-05-25 | 2020-08-25 | 成都中电熊猫显示科技有限公司 | 阵列基板及其制作方法、显示面板 |
CN115096965B (zh) * | 2022-05-31 | 2023-09-08 | 上海交通大学 | 薄膜晶体管型生化传感微阵列芯片及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232385A (ja) * | 1983-06-15 | 1984-12-27 | 株式会社東芝 | アクテイブマトリクス型表示装置 |
JPS6178166A (ja) * | 1984-09-25 | 1986-04-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ−アレ−とその製造方法 |
JPH06252398A (ja) * | 1993-02-25 | 1994-09-09 | Nec Corp | 薄膜集積回路およびその製造方法 |
JP2004253681A (ja) * | 2003-02-21 | 2004-09-09 | Konica Minolta Holdings Inc | 薄膜トランジスタ素子及びその製造方法 |
WO2004107473A1 (en) * | 2003-05-20 | 2004-12-09 | Koninklijke Philips Electronics N.V. | A field effect transistor arrangement and method of manufacturing a field effect transistor arrangement |
JP2005086147A (ja) * | 2003-09-11 | 2005-03-31 | Sony Corp | 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法 |
JP2005244197A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3651386A (en) * | 1970-08-24 | 1972-03-21 | Universal Oil Prod Co | Pyropolymeric semiconducting organic-refractory oxide material |
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JPH06314686A (ja) * | 1993-04-28 | 1994-11-08 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR100295637B1 (ko) * | 1997-12-29 | 2001-10-24 | 김영환 | 반도체웨이퍼의구조및반도체칩의제조방법 |
KR100317641B1 (ko) * | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
JP2002098948A (ja) * | 2000-09-20 | 2002-04-05 | Hitachi Ltd | 液晶表示装置の製造方法 |
TWI297407B (ja) * | 2002-01-29 | 2008-06-01 | Au Optronics Corp | |
US20060054882A1 (en) * | 2002-07-05 | 2006-03-16 | Fuji Electric Holdings Co., Ltd. | Switching element |
US7285440B2 (en) | 2002-11-25 | 2007-10-23 | International Business Machines Corporation | Organic underlayers that improve the performance of organic semiconductors |
US6854135B2 (en) | 2002-12-06 | 2005-02-15 | Microtek Medical Holdings, Inc. | Reusable, launderable water-soluble coveralls |
KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
JP4997688B2 (ja) * | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | 電極、薄膜トランジスタ、電子回路、表示装置および電子機器 |
JP4415653B2 (ja) * | 2003-11-19 | 2010-02-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
US7767998B2 (en) * | 2003-12-04 | 2010-08-03 | Alcatel-Lucent Usa Inc. | OFETs with active channels formed of densified layers |
KR101002332B1 (ko) * | 2003-12-30 | 2010-12-17 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
US20050180809A1 (en) * | 2004-02-13 | 2005-08-18 | Publications International, Ltd. | Apparatus and method for securing print media |
JP4407311B2 (ja) * | 2004-02-20 | 2010-02-03 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
GB0407739D0 (en) * | 2004-04-05 | 2004-05-12 | Univ Cambridge Tech | Dual-gate transistors |
KR100560796B1 (ko) * | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
TWI292076B (en) * | 2004-12-24 | 2008-01-01 | Au Optronics Corp | Pixel structure and thin film transistor and fabricating methods thereof |
KR101130404B1 (ko) * | 2005-02-16 | 2012-03-27 | 삼성전자주식회사 | 고차가지형 고분자에 분산된 고유전율 절연체를 포함하는유기 절연체 조성물 및 이를 이용한 유기박막 트랜지스터 |
US20060231908A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | Multilayer gate dielectric |
US7319153B2 (en) * | 2005-07-29 | 2008-01-15 | 3M Innovative Properties Company | 6,13-Bis(thienyl)pentacene compounds |
US7566915B2 (en) * | 2006-12-29 | 2009-07-28 | Intel Corporation | Guard ring extension to prevent reliability failures |
US7651882B1 (en) * | 2007-08-09 | 2010-01-26 | Impinj, Inc. | RFID tag circuit die with shielding layer to control I/O bump flow |
-
2005
- 2005-11-29 KR KR1020050114957A patent/KR100766318B1/ko active IP Right Grant
-
2006
- 2006-06-14 CN CN200610087273XA patent/CN1976084B/zh active Active
- 2006-06-28 JP JP2006178098A patent/JP4676390B2/ja active Active
- 2006-06-29 US US11/476,819 patent/US8716696B2/en active Active
-
2014
- 2014-03-18 US US14/218,126 patent/US9178169B2/en active Active
-
2015
- 2015-09-17 US US14/856,823 patent/US9496511B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232385A (ja) * | 1983-06-15 | 1984-12-27 | 株式会社東芝 | アクテイブマトリクス型表示装置 |
JPS6178166A (ja) * | 1984-09-25 | 1986-04-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ−アレ−とその製造方法 |
JPH06252398A (ja) * | 1993-02-25 | 1994-09-09 | Nec Corp | 薄膜集積回路およびその製造方法 |
JP2004253681A (ja) * | 2003-02-21 | 2004-09-09 | Konica Minolta Holdings Inc | 薄膜トランジスタ素子及びその製造方法 |
WO2004107473A1 (en) * | 2003-05-20 | 2004-12-09 | Koninklijke Philips Electronics N.V. | A field effect transistor arrangement and method of manufacturing a field effect transistor arrangement |
JP2005086147A (ja) * | 2003-09-11 | 2005-03-31 | Sony Corp | 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法 |
JP2005244197A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070120116A1 (en) | 2007-05-31 |
US9178169B2 (en) | 2015-11-03 |
US20160005985A1 (en) | 2016-01-07 |
US8716696B2 (en) | 2014-05-06 |
US20140197397A1 (en) | 2014-07-17 |
KR20070056393A (ko) | 2007-06-04 |
CN1976084A (zh) | 2007-06-06 |
KR100766318B1 (ko) | 2007-10-11 |
JP2007150240A (ja) | 2007-06-14 |
CN1976084B (zh) | 2010-06-02 |
US9496511B2 (en) | 2016-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4676390B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
KR101279927B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
JP5847061B2 (ja) | アレイ基板及びその製造方法 | |
KR101747391B1 (ko) | 액정표시장치용 어레이 기판 및 이의 제조 방법 | |
US8742437B2 (en) | Pixel structure and manufacturing method thereof | |
JP4733005B2 (ja) | 有機半導体物質を利用した液晶表示装置用アレイ基板及びその製造方法 | |
JP4759089B2 (ja) | 液晶表示装置の製造方法 | |
US8735883B2 (en) | Oxide thin film transistor and method of fabricating the same | |
JP2006086502A (ja) | 有機薄膜トランジスタ及び液晶表示装置用基板並びにそれらの製造方法 | |
KR101605723B1 (ko) | 산화물 박막 트랜지스터의 제조방법 | |
KR101205767B1 (ko) | 액상의 유기 반도체물질을 이용한 액정표시장치용 어레이기판의 제조방법 | |
KR20080057877A (ko) | 어레이 기판 및 그 제조방법 | |
KR20080080772A (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
KR101198219B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
KR101294693B1 (ko) | 액정표시장치용 어레이 기판 | |
KR101221950B1 (ko) | 유기 반도체물질을 이용한 액정표시장치용 어레이 기판 및그 제조 방법 | |
KR101377673B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
KR101250317B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100104 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100818 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101222 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110105 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110125 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110127 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4676390 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |