FR3098982B1 - Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication - Google Patents

Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication Download PDF

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Publication number
FR3098982B1
FR3098982B1 FR1908250A FR1908250A FR3098982B1 FR 3098982 B1 FR3098982 B1 FR 3098982B1 FR 1908250 A FR1908250 A FR 1908250A FR 1908250 A FR1908250 A FR 1908250A FR 3098982 B1 FR3098982 B1 FR 3098982B1
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FR
France
Prior art keywords
organic layer
active organic
optoelectronic device
manufacture
electrically conductive
Prior art date
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Active
Application number
FR1908250A
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English (en)
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FR3098982A1 (fr
Inventor
François Flamein
Emeline Saracco
Benjamin Bouthinon
David Guillermard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Isorg SA
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Isorg SA
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Publication date
Application filed by Isorg SA filed Critical Isorg SA
Priority to FR1908250A priority Critical patent/FR3098982B1/fr
Priority to TW109123523A priority patent/TW202114207A/zh
Priority to EP20739404.0A priority patent/EP4000110A1/fr
Priority to US17/628,070 priority patent/US20220190268A1/en
Priority to CN202080052090.2A priority patent/CN114127976A/zh
Priority to PCT/EP2020/070118 priority patent/WO2021013683A1/fr
Priority to KR1020227004339A priority patent/KR20220034185A/ko
Priority to JP2022503880A priority patent/JP2022542039A/ja
Publication of FR3098982A1 publication Critical patent/FR3098982A1/fr
Application granted granted Critical
Publication of FR3098982B1 publication Critical patent/FR3098982B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication La présente description concerne un procédé de fabrication d'un dispositif optoélectronique (35) comprenant les étapes successives de formation sur un support de premier et deuxième plots conducteurs électriquement (44, 45) ; dépôt d'une couche organique active recouvrant les premier et deuxième plots conducteurs électriquement ; dépôt d'une première couche d'interface sur la couche organique active au contact de la couche organique active ; formation d'une première ouverture dans la première couche d'interface et d'une deuxième ouverture dans la couche organique active dans le prolongement de la première ouverture, pour exposer le deuxième plot conducteur électriquement ; et formation d'une deuxième couche d'interface (62) s'étendant au moins en partie dans les première et deuxième ouvertures, la deuxième couche d'interface étant au contact de la première couche d'interface et du deuxième plot conducteur électriquement. Figure pour l'abrégé : Fig. 11
FR1908250A 2019-07-19 2019-07-19 Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication Active FR3098982B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1908250A FR3098982B1 (fr) 2019-07-19 2019-07-19 Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication
TW109123523A TW202114207A (zh) 2019-07-19 2020-07-13 包括具有改善的效能的活性有機層的光電子設備及製造該光電子設備的方法
US17/628,070 US20220190268A1 (en) 2019-07-19 2020-07-16 Optoelectronic device comprising an active organic layer with improved performance and method for producing said device
CN202080052090.2A CN114127976A (zh) 2019-07-19 2020-07-16 具有改善的性能的包含活性有机层的光电子器件以及用于制造所述器件的方法
EP20739404.0A EP4000110A1 (fr) 2019-07-19 2020-07-16 Dispositif optoelectronique comprenant une couche organique active a performances ameliorees et son procede de fabrication
PCT/EP2020/070118 WO2021013683A1 (fr) 2019-07-19 2020-07-16 Dispositif optoelectronique comprenant une couche organique active a performances ameliorees et son procede de fabrication
KR1020227004339A KR20220034185A (ko) 2019-07-19 2020-07-16 성능이 개선된 활성 유기층을 포함하는 광전자 장치 및 상기 장치의 제조 방법
JP2022503880A JP2022542039A (ja) 2019-07-19 2020-07-16 性能が改善された活性有機層を有する光電子デバイス及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1908250 2019-07-19
FR1908250A FR3098982B1 (fr) 2019-07-19 2019-07-19 Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication

Publications (2)

Publication Number Publication Date
FR3098982A1 FR3098982A1 (fr) 2021-01-22
FR3098982B1 true FR3098982B1 (fr) 2022-04-15

Family

ID=68581953

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1908250A Active FR3098982B1 (fr) 2019-07-19 2019-07-19 Dispositif optoélectronique comprenant une couche organique active à performances améliorées et son procédé de fabrication

Country Status (8)

Country Link
US (1) US20220190268A1 (fr)
EP (1) EP4000110A1 (fr)
JP (1) JP2022542039A (fr)
KR (1) KR20220034185A (fr)
CN (1) CN114127976A (fr)
FR (1) FR3098982B1 (fr)
TW (1) TW202114207A (fr)
WO (1) WO2021013683A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808759B (zh) * 2022-05-13 2023-07-11 天光材料科技股份有限公司 電極連接結構及其形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10335727A1 (de) * 2003-08-05 2005-02-24 H.C. Starck Gmbh Transparente Elektrode für elektro-optische Aufbauten
KR100766318B1 (ko) * 2005-11-29 2007-10-11 엘지.필립스 엘시디 주식회사 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법
KR101920766B1 (ko) * 2011-08-09 2018-11-22 엘지디스플레이 주식회사 유기 발광 표시 장치의 제조 방법
KR101560272B1 (ko) * 2013-02-25 2015-10-15 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조 방법
CN204216094U (zh) * 2014-10-15 2015-03-18 京东方科技集团股份有限公司 一种oled发光器件及显示装置
KR102444719B1 (ko) * 2016-10-05 2022-09-16 라이너지 테크 인코포레이션 유기 광검출기

Also Published As

Publication number Publication date
US20220190268A1 (en) 2022-06-16
WO2021013683A1 (fr) 2021-01-28
CN114127976A (zh) 2022-03-01
FR3098982A1 (fr) 2021-01-22
JP2022542039A (ja) 2022-09-29
KR20220034185A (ko) 2022-03-17
EP4000110A1 (fr) 2022-05-25
TW202114207A (zh) 2021-04-01

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