CN101685803B - 液晶显示装置的阵列基板制造方法 - Google Patents
液晶显示装置的阵列基板制造方法 Download PDFInfo
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- CN101685803B CN101685803B CN 200810222790 CN200810222790A CN101685803B CN 101685803 B CN101685803 B CN 101685803B CN 200810222790 CN200810222790 CN 200810222790 CN 200810222790 A CN200810222790 A CN 200810222790A CN 101685803 B CN101685803 B CN 101685803B
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 115
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 86
- 230000008021 deposition Effects 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000004380 ashing Methods 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 20
- 238000009413 insulation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
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Abstract
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Priority Applications (1)
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CN 200810222790 CN101685803B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示装置的阵列基板制造方法 |
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CN 200810222790 CN101685803B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示装置的阵列基板制造方法 |
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CN101685803A CN101685803A (zh) | 2010-03-31 |
CN101685803B true CN101685803B (zh) | 2012-12-26 |
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CN 200810222790 Expired - Fee Related CN101685803B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示装置的阵列基板制造方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102738007B (zh) * | 2012-07-02 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制造方法及阵列基板的制造方法 |
CN103730413B (zh) * | 2013-12-31 | 2016-08-17 | 合肥京东方光电科技有限公司 | 一种阵列基板的制备方法以及阵列基板、显示装置 |
CN104183607A (zh) * | 2014-08-14 | 2014-12-03 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法、显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751381A (en) * | 1993-12-21 | 1998-05-12 | Hitachi, Ltd. | Active matrix LCD device with image signal lines having a multilayered structure |
CN1267837A (zh) * | 1999-03-16 | 2000-09-27 | 松下电器产业株式会社 | 有源元件阵列衬底的制造工艺 |
US7075614B2 (en) * | 2000-06-02 | 2006-07-11 | Sharp Kabushiki Kaisha | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
CN101034262A (zh) * | 2006-03-09 | 2007-09-12 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板的制作方法 |
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- 2008-09-25 CN CN 200810222790 patent/CN101685803B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751381A (en) * | 1993-12-21 | 1998-05-12 | Hitachi, Ltd. | Active matrix LCD device with image signal lines having a multilayered structure |
CN1267837A (zh) * | 1999-03-16 | 2000-09-27 | 松下电器产业株式会社 | 有源元件阵列衬底的制造工艺 |
US7075614B2 (en) * | 2000-06-02 | 2006-07-11 | Sharp Kabushiki Kaisha | Method of making active matrix substrate with pixel electrodes of photosensitive conductive material |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
CN101034262A (zh) * | 2006-03-09 | 2007-09-12 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板的制作方法 |
Non-Patent Citations (1)
Title |
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JP昭60-112089A 1985.06.18 |
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