CN102148196A - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
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- CN102148196A CN102148196A CN2011100202480A CN201110020248A CN102148196A CN 102148196 A CN102148196 A CN 102148196A CN 2011100202480 A CN2011100202480 A CN 2011100202480A CN 201110020248 A CN201110020248 A CN 201110020248A CN 102148196 A CN102148196 A CN 102148196A
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Images
Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100202480A CN102148196B (zh) | 2010-04-26 | 2011-01-18 | Tft-lcd阵列基板及其制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010158983.3 | 2010-04-26 | ||
CN201010158983 | 2010-04-26 | ||
CN2011100202480A CN102148196B (zh) | 2010-04-26 | 2011-01-18 | Tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102148196A true CN102148196A (zh) | 2011-08-10 |
CN102148196B CN102148196B (zh) | 2013-07-10 |
Family
ID=44422364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011100202480A Active CN102148196B (zh) | 2010-04-26 | 2011-01-18 | Tft-lcd阵列基板及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8603843B2 (zh) |
EP (2) | EP3483926B1 (zh) |
JP (1) | JP5868949B2 (zh) |
KR (1) | KR101279982B1 (zh) |
CN (1) | CN102148196B (zh) |
WO (1) | WO2011134389A1 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709237A (zh) * | 2012-03-05 | 2012-10-03 | 京东方科技集团股份有限公司 | 薄膜场效应晶体管阵列基板及其制造方法、电子器件 |
CN103107133A (zh) * | 2013-01-04 | 2013-05-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
JP2014529099A (ja) * | 2011-08-24 | 2014-10-30 | 京東方科技集團股▲ふん▼有限公司 | 有機薄膜トランジスタのアレイ基板及び、その製造方法、並びに表示装置 |
CN104950539A (zh) * | 2015-07-15 | 2015-09-30 | 深圳市华星光电技术有限公司 | 一种显示面板的制作方法 |
CN105118808A (zh) * | 2015-08-10 | 2015-12-02 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法 |
TWI548924B (zh) * | 2013-06-04 | 2016-09-11 | 群創光電股份有限公司 | 顯示面板以及顯示裝置 |
CN106129071A (zh) * | 2016-09-13 | 2016-11-16 | 京东方科技集团股份有限公司 | 一种阵列基板的制作方法及相应装置 |
CN106229310A (zh) * | 2016-08-04 | 2016-12-14 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
CN108198821A (zh) * | 2017-12-28 | 2018-06-22 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制备方法、显示装置 |
US10319749B1 (en) | 2017-12-28 | 2019-06-11 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, fabricating method for the same and display device |
CN110024156A (zh) * | 2016-11-29 | 2019-07-16 | 弗莱克因艾伯勒有限公司 | 半导体图案化 |
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CN102629585B (zh) * | 2011-11-17 | 2014-07-23 | 京东方科技集团股份有限公司 | 一种显示装置、薄膜晶体管、阵列基板及其制造方法 |
CN102779783B (zh) * | 2012-06-04 | 2014-09-17 | 北京京东方光电科技有限公司 | 一种像素结构及其制造方法、显示装置 |
US8801948B2 (en) | 2012-07-02 | 2014-08-12 | Apple Inc. | TFT mask reduction |
CN102779785A (zh) * | 2012-07-25 | 2012-11-14 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法和显示装置 |
CN102903675B (zh) * | 2012-10-12 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种tft阵列基板、制作方法及显示装置 |
KR20140056565A (ko) * | 2012-10-29 | 2014-05-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20140102983A (ko) | 2013-02-15 | 2014-08-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP2015012048A (ja) | 2013-06-27 | 2015-01-19 | 三菱電機株式会社 | アクティブマトリクス基板およびその製造方法 |
CN103779357A (zh) * | 2014-01-24 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板制造方法 |
CN103915380A (zh) * | 2014-03-31 | 2014-07-09 | 京东方科技集团股份有限公司 | 一种阵列基板的制作方法、阵列基板及显示装置 |
CN104714343B (zh) * | 2015-03-18 | 2018-06-01 | 昆山龙腾光电有限公司 | 边缘场开关模式的薄膜晶体管阵列基板及其制造方法 |
CN106783737B (zh) * | 2017-04-07 | 2020-02-21 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板、显示装置 |
CN110794630A (zh) * | 2019-10-09 | 2020-02-14 | 南京中电熊猫平板显示科技有限公司 | 一种阵列基板及其制造方法 |
Citations (5)
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EP2565916A1 (en) | 2013-03-06 |
EP3483926A1 (en) | 2019-05-15 |
JP2013525849A (ja) | 2013-06-20 |
EP2565916A4 (en) | 2017-09-27 |
WO2011134389A1 (zh) | 2011-11-03 |
CN102148196B (zh) | 2013-07-10 |
EP3483926B1 (en) | 2020-11-04 |
US20120107982A1 (en) | 2012-05-03 |
EP2565916B1 (en) | 2019-01-09 |
KR101279982B1 (ko) | 2013-07-05 |
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US8603843B2 (en) | 2013-12-10 |
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