TWI695375B - 記憶體裝置及半導體裝置 - Google Patents

記憶體裝置及半導體裝置 Download PDF

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Publication number
TWI695375B
TWI695375B TW104110454A TW104110454A TWI695375B TW I695375 B TWI695375 B TW I695375B TW 104110454 A TW104110454 A TW 104110454A TW 104110454 A TW104110454 A TW 104110454A TW I695375 B TWI695375 B TW I695375B
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TW
Taiwan
Prior art keywords
wiring
transistor
film
oxide semiconductor
semiconductor film
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TW104110454A
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English (en)
Chinese (zh)
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TW201541454A (zh
Inventor
大貫達也
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日商半導體能源研究所股份有限公司
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
TW104110454A 2014-04-10 2015-03-31 記憶體裝置及半導體裝置 TWI695375B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2014-080872 2014-04-10
JP2014080872 2014-04-10
JP2014-092831 2014-04-28
JP2014092831 2014-04-28
JP2014180022 2014-09-04
JP2014-180022 2014-09-04

Publications (2)

Publication Number Publication Date
TW201541454A TW201541454A (zh) 2015-11-01
TWI695375B true TWI695375B (zh) 2020-06-01

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Family Applications (3)

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TW104110454A TWI695375B (zh) 2014-04-10 2015-03-31 記憶體裝置及半導體裝置
TW109113198A TWI735206B (zh) 2014-04-10 2015-03-31 記憶體裝置及半導體裝置
TW110123846A TWI767772B (zh) 2014-04-10 2015-03-31 記憶體裝置及半導體裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW109113198A TWI735206B (zh) 2014-04-10 2015-03-31 記憶體裝置及半導體裝置
TW110123846A TWI767772B (zh) 2014-04-10 2015-03-31 記憶體裝置及半導體裝置

Country Status (5)

Country Link
US (2) US9478276B2 (enExample)
JP (5) JP6661280B2 (enExample)
KR (1) KR102351193B1 (enExample)
TW (3) TWI695375B (enExample)
WO (1) WO2015155635A1 (enExample)

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JP6525421B2 (ja) * 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
TWI695375B (zh) * 2014-04-10 2020-06-01 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
WO2015170220A1 (en) * 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
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JPWO2016181256A1 (ja) * 2015-05-12 2018-03-08 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器
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JP6802656B2 (ja) 2015-07-30 2020-12-16 株式会社半導体エネルギー研究所 メモリセルの作製方法及び半導体装置の作製方法
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JPWO2017158465A1 (ja) 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
US10008502B2 (en) * 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10037294B2 (en) 2016-05-20 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
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CN111052236B (zh) 2017-09-06 2024-03-05 株式会社半导体能源研究所 半导体装置
JP7328146B2 (ja) 2017-09-06 2023-08-16 株式会社半導体エネルギー研究所 記憶装置及び電子機器
CN111357053B (zh) 2017-11-30 2024-05-28 株式会社半导体能源研究所 存储装置
TWI732090B (zh) 2018-01-16 2021-07-01 聯華電子股份有限公司 記憶體元件以及其操作方法
US11423975B2 (en) 2018-02-23 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Memory device and method of operating the same
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TW202537448A (zh) 2019-01-25 2025-09-16 日商半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置的電子裝置
JP7535032B2 (ja) 2019-02-22 2024-08-15 株式会社半導体エネルギー研究所 エラー検出機能を有する記憶装置、半導体装置、および、電子機器
JP7457006B2 (ja) * 2019-04-26 2024-03-27 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の動作方法
KR102886374B1 (ko) * 2021-07-28 2025-11-17 에스케이하이닉스 주식회사 반도체 메모리 장치
WO2025057022A1 (ja) 2023-09-12 2025-03-20 株式会社半導体エネルギー研究所 記憶装置

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