TWI658168B - 用於含矽膜的沉積方法 - Google Patents

用於含矽膜的沉積方法 Download PDF

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TWI658168B
TWI658168B TW106103536A TW106103536A TWI658168B TW I658168 B TWI658168 B TW I658168B TW 106103536 A TW106103536 A TW 106103536A TW 106103536 A TW106103536 A TW 106103536A TW I658168 B TWI658168 B TW I658168B
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Taiwan
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plasma
branched
linear
group
film
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TW106103536A
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TW201720953A (zh
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李建恒
約翰 法蘭西斯 雷曼
新建 雷
雷蒙 尼克勞斯 孟提
羅伯特 戈登 瑞吉
威廉 羅伯特 恩特利
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美商慧盛材料美國責任有限公司
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI857271B (zh) * 2021-01-26 2024-10-01 美商恩特葛瑞斯股份有限公司 高通量沈積方法

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015047914A1 (en) 2013-09-27 2015-04-02 Antonio Sanchez Amine substituted trisilylamine and tridisilylamine compounds
US11549181B2 (en) * 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
JP2017535077A (ja) * 2014-10-24 2017-11-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを使用した方法
US10354860B2 (en) * 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
TWI716333B (zh) * 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
EP3307745B1 (en) * 2015-06-12 2020-04-01 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition processes for forming silicon- and nitrogen-containing thin films
EP3307744B1 (en) * 2015-06-12 2020-09-02 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition processes for forming silicon- and oxygen-containing thin films
WO2017070192A1 (en) * 2015-10-22 2017-04-27 Applied Materials, Inc. METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US12454753B2 (en) * 2018-06-15 2025-10-28 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
WO2017223323A1 (en) * 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable amorphous silicon films for gapfill applications
US9929006B2 (en) 2016-07-20 2018-03-27 Micron Technology, Inc. Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10468244B2 (en) * 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US11017998B2 (en) 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10811251B2 (en) 2016-09-30 2020-10-20 Intel Corporation Dielectric gap-fill material deposition
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10647578B2 (en) 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
US10192734B2 (en) * 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
US11591692B2 (en) * 2017-02-08 2023-02-28 Versum Materials Us, Llc Organoamino-polysiloxanes for deposition of silicon-containing films
US10822458B2 (en) * 2017-02-08 2020-11-03 Versum Materials Us, Llc Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
US10242866B2 (en) 2017-03-08 2019-03-26 Lam Research Corporation Selective deposition of silicon nitride on silicon oxide using catalytic control
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
CN110476239B (zh) 2017-04-07 2023-10-13 应用材料公司 使用反应性退火的间隙填充
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
CN110546302B (zh) * 2017-05-05 2022-05-27 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) * 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
WO2018222771A1 (en) 2017-06-02 2018-12-06 Applied Materials, Inc. Dry stripping of boron carbide hardmask
TWI722292B (zh) * 2017-07-05 2021-03-21 美商應用材料股份有限公司 氮含量高的氮化矽膜
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
TWI633201B (zh) * 2017-10-24 2018-08-21 國立交通大學 非晶碳薄膜、其製造方法與包含其之光學系統
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
SG11202003438QA (en) 2017-11-16 2020-05-28 Applied Materials Inc High pressure steam anneal processing apparatus
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
US10460930B2 (en) * 2017-11-22 2019-10-29 Lam Research Corporation Selective growth of SiO2 on dielectric surfaces in the presence of copper
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
TWI793262B (zh) * 2018-02-21 2023-02-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法
TWI799516B (zh) 2018-02-21 2023-04-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法
CN111656510A (zh) * 2018-02-22 2020-09-11 应用材料公司 处理掩模基板以实现更佳的膜质量的方法
WO2019169335A1 (en) 2018-03-02 2019-09-06 Lam Research Corporation Selective deposition using hydrolysis
KR102536820B1 (ko) 2018-03-09 2023-05-24 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
CN112005342B (zh) * 2018-03-28 2025-09-19 应用材料公司 非晶硅的远程电容耦合等离子体沉积
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ａｌｄ成膜方法およびａｌｄ成膜装置
TWI850530B (zh) * 2018-06-11 2024-08-01 美商慧盛材料美國責任有限公司 用於沉積含矽膜的組合物及方法
JP7230067B2 (ja) * 2018-06-15 2023-02-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法
US20200003937A1 (en) * 2018-06-29 2020-01-02 Applied Materials, Inc. Using flowable cvd to gap fill micro/nano structures for optical components
JP6909762B2 (ja) * 2018-07-23 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10483099B1 (en) * 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102373339B1 (ko) 2018-08-10 2022-03-10 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용하여 막을 증착시키는 방법
EP3872223A3 (en) * 2018-08-10 2021-11-17 Versum Materials US, LLC Silicon compounds and methods for depositing films using same
US10985010B2 (en) * 2018-08-29 2021-04-20 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
WO2020092002A1 (en) 2018-10-30 2020-05-07 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
JP2022507390A (ja) 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド 強化拡散プロセスを使用する膜の堆積
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
KR102731213B1 (ko) 2018-12-21 2024-11-15 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 550℃ 초과의 온도에서 ALD를 사용하여 Si-함유 막을 증착시키기 위한 전구체 및 방법
KR102862318B1 (ko) * 2019-02-05 2025-09-18 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 산화규소의 증착
KR102783961B1 (ko) * 2019-03-20 2025-03-18 어플라이드 머티어리얼스, 인코포레이티드 저온의 열 산화물 품질에서 두꺼운 산화물 막들을 성장시키는 방법
TWI744957B (zh) * 2019-06-21 2021-11-01 美商慧盛材料美國責任有限公司 用於沉積含矽膜的組合物及其使用方法
KR102829813B1 (ko) * 2019-10-08 2025-07-03 에스케이트리켐 주식회사 금속 함유 박막 형성을 위한 신규 전구체 및 이를 이용한 금속 함유 박막 형성 방법 및 상기 금속 함유 박막을 포함하는 반도체 소자.
US11482414B2 (en) 2019-12-18 2022-10-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Ultra-low temperature ALD to form high-quality Si-containing film
KR102818620B1 (ko) * 2019-12-20 2025-06-10 삼성전자주식회사 물질막 형성 방법과, 집적회로 소자 및 그 제조 방법
TWI819257B (zh) * 2019-12-20 2023-10-21 美商應用材料股份有限公司 具有可調整碳含量之碳氮化矽間隙填充
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
EP4158078A1 (en) * 2020-05-27 2023-04-05 Gelest, Inc. Silicon-based thin films from n-alkyl substituted perhydridocyclotrisilazanes
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備
US11674222B2 (en) 2020-09-29 2023-06-13 Applied Materials, Inc. Method of in situ ceramic coating deposition
TW202248447A (zh) * 2021-03-08 2022-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成包含有鋁、鈦、與碳之層的方法及系統
US20240158915A1 (en) * 2021-03-18 2024-05-16 Versum Materials Us, Llc Composition for atomic layer deposition of high quality silicon oxide thin films
CN115565861A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 一种薄膜沉积方法及半导体器件
TW202315962A (zh) * 2021-09-08 2023-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 拓樸選擇性沉積方法
KR20240110961A (ko) * 2021-11-15 2024-07-16 버슘머트리얼즈 유에스, 엘엘씨 다층 질화규소 필름
KR20240112888A (ko) * 2021-11-24 2024-07-19 엔테그리스, 아이엔씨. 유기주석 전구체 화합물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120220139A1 (en) * 2009-10-14 2012-08-30 Asm Japan K.K. Method of depositing dielectric film by modified peald method
US20120256160A1 (en) * 2011-04-08 2012-10-11 Georgia Tech Research Corporation Piezo-phototronic Effect Devices

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200666A (en) 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
JPS61234534A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
US5008422A (en) 1985-04-26 1991-04-16 Sri International Polysilazanes and related compositions, processes and uses
EP0218117A3 (en) 1985-10-11 1989-11-23 Allied Corporation Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology
JPH0662775B2 (ja) 1987-06-12 1994-08-17 チッソ株式会社 新規ポリシラザン及びその製造方法
JP3060185B2 (ja) * 1991-05-01 2000-07-10 株式会社高純度化学研究所 半導体装置のシリコン酸化膜の製造方法
JPH06310493A (ja) 1993-04-23 1994-11-04 Kawasaki Steel Corp 半導体装置の製造装置
US5567661A (en) * 1993-08-26 1996-10-22 Fujitsu Limited Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound
JP3401322B2 (ja) 1993-08-26 2003-04-28 富士通株式会社 絶縁膜を有する半導体装置の製造方法
US5413813A (en) * 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5424095A (en) * 1994-03-07 1995-06-13 Eniricerche S.P.A. Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors
JP3396791B2 (ja) * 1994-08-30 2003-04-14 富士通株式会社 絶縁膜の形成方法
FR2759362B1 (fr) * 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
US5968611A (en) * 1997-11-26 1999-10-19 The Research Foundation Of State University Of New York Silicon nitrogen-based films and method of making the same
US6197658B1 (en) 1998-10-30 2001-03-06 Taiwan Semiconductor Manufacturing Company Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6630413B2 (en) * 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
DE60127973T2 (de) * 2000-08-18 2008-01-17 Tokyo Electron Ltd. Herstellungsprozess eines halbleiterbauelements mit einem zwischenfilm aus siliziumnitrid mit niedriger dielektrizitätskonstante
JP3915881B2 (ja) * 2001-03-14 2007-05-16 信越化学工業株式会社 分岐状低分子シロキサンの製造方法
JP2003203800A (ja) * 2001-09-14 2003-07-18 Sekisui Chem Co Ltd 常圧プラズマ処理方法および装置
US6969769B2 (en) * 2002-06-14 2005-11-29 Vanson Halosource, Inc. N-halamine siloxanes for use in biocidal coatings and materials
JP4217870B2 (ja) 2002-07-15 2009-02-04 日本電気株式会社 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置
AU2003256433A1 (en) * 2002-08-16 2004-03-03 Joseph P. Kennedy Poly(cyclosiloxane) composiiton and method of synthesis thereof
CN100355813C (zh) * 2003-05-23 2007-12-19 陶氏康宁公司 具有高的湿蚀刻速率的硅氧烷树脂型抗反射涂料组合物
US7125582B2 (en) 2003-07-30 2006-10-24 Intel Corporation Low-temperature silicon nitride deposition
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
JP3666751B2 (ja) 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
DE102004001288A1 (de) * 2004-01-07 2005-08-11 Clariant International Limited Hydrophile Beschichtung auf Polysilazanbasis
US7470450B2 (en) * 2004-01-23 2008-12-30 Intel Corporation Forming a silicon nitride film
US7098150B2 (en) * 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US20050239295A1 (en) * 2004-04-27 2005-10-27 Wang Pei-L Chemical treatment of material surfaces
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
JP4470023B2 (ja) * 2004-08-20 2010-06-02 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード シリコン窒化物膜の製造方法
US7332445B2 (en) * 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
WO2006043464A1 (ja) * 2004-10-19 2006-04-27 Toray Industries, Inc. フィルムの製造方法、および、フィルム
KR101191098B1 (ko) * 2004-12-17 2012-10-15 다우 코닝 코포레이션 실록산 수지 피복물
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7875556B2 (en) * 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
JP4766934B2 (ja) * 2005-06-24 2011-09-07 パナソニック株式会社 層間絶縁膜の形成方法
JP4870759B2 (ja) * 2005-06-29 2012-02-08 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ３成分膜の新規な堆積方法
TW200715376A (en) 2005-07-08 2007-04-16 Aviza Tech Inc Method for depositing silicon-containing films
US20070010072A1 (en) * 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
JP4305427B2 (ja) * 2005-08-02 2009-07-29 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US8530361B2 (en) * 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US7498273B2 (en) 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7781352B2 (en) * 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US9337054B2 (en) 2007-06-28 2016-05-10 Entegris, Inc. Precursors for silicon dioxide gap fill
JP2009032962A (ja) 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
JP4935687B2 (ja) * 2008-01-19 2012-05-23 東京エレクトロン株式会社 成膜方法及び成膜装置
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
US20100081293A1 (en) * 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
JP5559988B2 (ja) 2009-06-03 2014-07-23 東京エレクトロン株式会社 シリコン酸化膜用成膜原料およびそれを用いたシリコン酸化膜の成膜方法
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5011355B2 (ja) * 2009-07-30 2012-08-29 東京エレクトロン株式会社 成膜方法
KR101752901B1 (ko) 2009-08-25 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 재생 방법, 재생 반도체 기판의 제작 방법, 및 ｓｏｉ 기판의 제작 방법
TW201131651A (en) * 2009-10-05 2011-09-16 Univ Tohoku Low dielectric constant insulating film
US20110136347A1 (en) * 2009-10-21 2011-06-09 Applied Materials, Inc. Point-of-use silylamine generation
US8946672B2 (en) * 2009-11-11 2015-02-03 Nec Corporation Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
US20110151677A1 (en) * 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
WO2011084812A2 (en) 2010-01-06 2011-07-14 Applied Materials, Inc. Flowable dielectric using oxide liner
US8461367B2 (en) * 2010-01-15 2013-06-11 Shin-Etsu Chemical Co., Ltd. Preparation process of trisilylamine
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
EP2362411A1 (en) * 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
US20120213940A1 (en) 2010-10-04 2012-08-23 Applied Materials, Inc. Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma
US20120083133A1 (en) * 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
US8455768B2 (en) * 2010-11-15 2013-06-04 International Business Machines Corporation Back-end-of-line planar resistor
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US8460753B2 (en) * 2010-12-09 2013-06-11 Air Products And Chemicals, Inc. Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US8592005B2 (en) * 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
DE102011075974A1 (de) * 2011-05-17 2012-11-22 Evonik Degussa Gmbh Verfahren zur Herstellung von Trisilylamin in der Gasphase
KR101615584B1 (ko) * 2011-11-21 2016-04-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 장치, 반도체 장치의 제조 방법 및 기록 매체
US20130209343A1 (en) * 2012-02-10 2013-08-15 American Air Liquide, Inc. Liquid phase synthesis of trisilylamine
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
CN104271797B (zh) * 2012-03-09 2017-08-25 弗萨姆材料美国有限责任公司 显示器件的阻隔材料
JP5949027B2 (ja) * 2012-03-23 2016-07-06 富士ゼロックス株式会社 静電荷像現像用トナー、静電荷像現像剤、トナーカートリッジ、現像剤カートリッジ、プロセスカートリッジ、画像形成装置、及び、画像形成方法
US20130260575A1 (en) * 2012-03-28 2013-10-03 Air Products And Chemicals, Inc. Silicon precursors and compositions comprising same for depositing low dielectric constant films
US9978585B2 (en) * 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US10211310B2 (en) * 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US9593133B2 (en) * 2012-07-20 2017-03-14 America Air Liquide, Inc. Organosilane precursors for ALD/CVD silicon-containing film applications
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
DE102012214290A1 (de) * 2012-08-10 2014-02-13 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin
KR101361454B1 (ko) * 2012-08-23 2014-02-21 이근수 반도체 소자의 실리콘 산화막 형성 방법
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US9878234B2 (en) * 2012-12-10 2018-01-30 Arlen Moller Incorporating objective assessments of fantasy-team-owners' physical activity into fantasy sport platforms
US10279959B2 (en) * 2012-12-11 2019-05-07 Versum Materials Us, Llc Alkoxysilylamine compounds and applications thereof
KR101583232B1 (ko) * 2012-12-31 2016-01-07 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
KR101599952B1 (ko) * 2012-12-31 2016-03-04 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
US9343545B2 (en) 2013-03-06 2016-05-17 International Business Machines Corporation Electrical coupling of memory cell access devices to a word line
DE102013209802A1 (de) * 2013-05-27 2014-11-27 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol
KR101600337B1 (ko) * 2013-06-07 2016-03-08 (주)디엔에프 신규한 아미노실릴아민 화합물, 이의 제조방법 및 이를 이용한 실리콘 함유 박막
WO2015047914A1 (en) * 2013-09-27 2015-04-02 Antonio Sanchez Amine substituted trisilylamine and tridisilylamine compounds
US9905415B2 (en) 2013-10-03 2018-02-27 Versum Materials Us, Llc Methods for depositing silicon nitride films
WO2015112324A1 (en) * 2014-01-24 2015-07-30 Applied Materials, Inc. Deposition of silicon and oxygen-containing films without an oxidizer
JP6345006B2 (ja) * 2014-07-08 2018-06-20 キヤノン株式会社 インクジェット記録ヘッド用基板の製造方法
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
US20160156066A1 (en) * 2014-10-20 2016-06-02 Massachusetts Institute Of Technology Polymer electrolytes for electrochemical cells
JP2017535077A (ja) 2014-10-24 2017-11-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを使用した方法
US10354860B2 (en) * 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US11001599B2 (en) 2015-03-23 2021-05-11 Gelest Technologies, Inc. N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11124876B2 (en) * 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
KR20170019668A (ko) * 2015-08-12 2017-02-22 (주)디엔에프 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법
WO2017070192A1 (en) * 2015-10-22 2017-04-27 Applied Materials, Inc. METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN
US12454753B2 (en) * 2018-06-15 2025-10-28 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
SG11201805289WA (en) * 2015-12-21 2018-07-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing film
SG11201807211XA (en) 2016-02-26 2018-09-27 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing film
US10384944B2 (en) * 2016-05-19 2019-08-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of Si—H containing iodosilanes via halide exchange reaction
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US11017998B2 (en) * 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10468244B2 (en) * 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10647578B2 (en) * 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
US11851756B2 (en) * 2017-09-14 2023-12-26 Versum Materials Us, Llc Methods for depositing silicon-containing films
US11078569B2 (en) * 2017-09-19 2021-08-03 Versum Materials Us, Llc Trisilylamine derivatives as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
US20190318925A1 (en) * 2018-04-11 2019-10-17 Versum Materials Us, Llc Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same
CN114174555A (zh) * 2019-07-25 2022-03-11 弗萨姆材料美国有限责任公司 用于沉积含硅膜的包含硅杂环烷烃的组合物及其使用方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120220139A1 (en) * 2009-10-14 2012-08-30 Asm Japan K.K. Method of depositing dielectric film by modified peald method
US20120256160A1 (en) * 2011-04-08 2012-10-11 Georgia Tech Research Corporation Piezo-phototronic Effect Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI857271B (zh) * 2021-01-26 2024-10-01 美商恩特葛瑞斯股份有限公司 高通量沈積方法

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