JP2017535077A - ケイ素含有膜の堆積のための組成物及びそれを使用した方法 - Google Patents

ケイ素含有膜の堆積のための組成物及びそれを使用した方法 Download PDF

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JP2017535077A
JP2017535077A JP2017522032A JP2017522032A JP2017535077A JP 2017535077 A JP2017535077 A JP 2017535077A JP 2017522032 A JP2017522032 A JP 2017522032A JP 2017522032 A JP2017522032 A JP 2017522032A JP 2017535077 A JP2017535077 A JP 2017535077A
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branched
linear
group
compound
plasma
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Inventor
リー ジエンホゥオン
リー ジエンホゥオン
フランシス レーマン ジョン
フランシス レーマン ジョン
レイ シンジエン
レイ シンジエン
レイモンド　ニコラス　バーティス
ニコラス バーティス レイモンド
ゴードン リッジウェイ ロバート
ゴードン リッジウェイ ロバート
ロバート エントリー ウィリアム
ロバート エントリー ウィリアム
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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Publication of JP2017535077A publication Critical patent/JP2017535077A/ja
Priority to JP2019164049A priority Critical patent/JP6949912B2/ja
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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JP7433437B2 (ja) 2019-12-20 2024-02-19 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填
JP2024063001A (ja) * 2019-12-20 2024-05-10 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填
JP7745670B2 (ja) 2019-12-20 2025-09-29 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填

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