JP7433437B2 - 炭素含有量が調整可能な炭窒化ケイ素間隙充填 - Google Patents
炭素含有量が調整可能な炭窒化ケイ素間隙充填 Download PDFInfo
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- JP7433437B2 JP7433437B2 JP2022536758A JP2022536758A JP7433437B2 JP 7433437 B2 JP7433437 B2 JP 7433437B2 JP 2022536758 A JP2022536758 A JP 2022536758A JP 2022536758 A JP2022536758 A JP 2022536758A JP 7433437 B2 JP7433437 B2 JP 7433437B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 33
- 229910052710 silicon Inorganic materials 0.000 title claims description 33
- 239000010703 silicon Substances 0.000 title claims description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052799 carbon Inorganic materials 0.000 title claims description 11
- 238000011049 filling Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 137
- 238000012545 processing Methods 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 73
- 239000002243 precursor Substances 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 39
- 230000009969 flowable effect Effects 0.000 claims description 38
- 229910000077 silane Inorganic materials 0.000 claims description 37
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 36
- 239000000376 reactant Substances 0.000 claims description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 30
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 150000004756 silanes Chemical class 0.000 claims description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 10
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- 125000003545 alkoxy group Chemical group 0.000 claims description 8
- 150000001412 amines Chemical class 0.000 claims description 8
- 150000004820 halides Chemical class 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 6
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 94
- 230000008569 process Effects 0.000 description 30
- 238000005229 chemical vapour deposition Methods 0.000 description 23
- 230000008021 deposition Effects 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- WITHQRXGKIBTNC-UHFFFAOYSA-N 1,2,2,3,4,4,5,6-octamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound CN1[SiH](C)N(C)[Si](C)(C)N(C)[Si]1(C)C WITHQRXGKIBTNC-UHFFFAOYSA-N 0.000 description 7
- -1 4,4-dimethylpentyl Chemical group 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- DFQSCSITPYBDDC-UHFFFAOYSA-N 2,2,4,4,6,6-hexaethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound CC[Si]1(CC)N[Si](CC)(CC)N[Si](CC)(CC)N1 DFQSCSITPYBDDC-UHFFFAOYSA-N 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- OMFLUDNZNHPEIP-UHFFFAOYSA-N 1,2,2,3,4,4,5,6-octaethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C(C)[SiH]1N([Si](N([Si](N1CC)(CC)CC)CC)(CC)CC)CC OMFLUDNZNHPEIP-UHFFFAOYSA-N 0.000 description 5
- PNOLPKSNKYDRIR-UHFFFAOYSA-N C(CC)[Si]1(N[Si](N[Si](N1)(CCC)CCC)(CCC)CCC)CCC Chemical compound C(CC)[Si]1(N[Si](N[Si](N1)(CCC)CCC)(CCC)CCC)CCC PNOLPKSNKYDRIR-UHFFFAOYSA-N 0.000 description 5
- 238000003848 UV Light-Curing Methods 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000003085 diluting agent Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000012805 post-processing Methods 0.000 description 4
- YNBCUYMPTIESRI-UHFFFAOYSA-N 4,4,5,5,6,6-hexamethyltriazatrisilinane Chemical compound C[Si]1([Si]([Si](NNN1)(C)C)(C)C)C YNBCUYMPTIESRI-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RXEDUHCYZFSMED-UHFFFAOYSA-N C(C)[SiH]1[Si](N(N(N([SiH2]1)C)C)C)(C)C Chemical compound C(C)[SiH]1[Si](N(N(N([SiH2]1)C)C)C)(C)C RXEDUHCYZFSMED-UHFFFAOYSA-N 0.000 description 3
- HYBIEFPZQMTWIZ-UHFFFAOYSA-N C(C)[SiH]1[Si](N(N(N([SiH2]1)C)C)CC)(CC)CC Chemical compound C(C)[SiH]1[Si](N(N(N([SiH2]1)C)C)CC)(CC)CC HYBIEFPZQMTWIZ-UHFFFAOYSA-N 0.000 description 3
- FNAFZXQJNPTKEJ-UHFFFAOYSA-N C(C)[SiH]1[Si](N(N(N([Si]1(C)C)CC)CC)CC)(C)C Chemical compound C(C)[SiH]1[Si](N(N(N([Si]1(C)C)CC)CC)CC)(C)C FNAFZXQJNPTKEJ-UHFFFAOYSA-N 0.000 description 3
- KVNYATKRQNSHNY-UHFFFAOYSA-N C(C)[SiH]1[Si]([Si](N(N(N1CC)CC)CC)(CC)CC)(CC)CC Chemical compound C(C)[SiH]1[Si]([Si](N(N(N1CC)CC)CC)(CC)CC)(CC)CC KVNYATKRQNSHNY-UHFFFAOYSA-N 0.000 description 3
- DIBYFAONUQPWPU-UHFFFAOYSA-N C(C)[Si]1([Si](NNN[Si]1(C)C)(C)C)CC Chemical compound C(C)[Si]1([Si](NNN[Si]1(C)C)(C)C)CC DIBYFAONUQPWPU-UHFFFAOYSA-N 0.000 description 3
- SCHFTCGUROHGMG-UHFFFAOYSA-N C(CC)N1N(N([SiH2][SiH2][SiH2]1)CCC)CCC Chemical compound C(CC)N1N(N([SiH2][SiH2][SiH2]1)CCC)CCC SCHFTCGUROHGMG-UHFFFAOYSA-N 0.000 description 3
- QXZDCQLFBXDQMW-UHFFFAOYSA-N C(CC)[Si]1([Si]([Si](NNN1)(CCC)CCC)(CCC)CCC)CCC Chemical compound C(CC)[Si]1([Si]([Si](NNN1)(CCC)CCC)(CCC)CCC)CCC QXZDCQLFBXDQMW-UHFFFAOYSA-N 0.000 description 3
- SWWMKOZGAKIYDK-UHFFFAOYSA-N CN1N(N([SiH2][SiH2][SiH2]1)C)C Chemical compound CN1N(N([SiH2][SiH2][SiH2]1)C)C SWWMKOZGAKIYDK-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- OFGKCVAPINDNBP-UHFFFAOYSA-N di(butan-2-yl)-fluoro-(2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinan-1-yl)silane Chemical compound CCC(C)[Si](F)(C(C)CC)N1[Si](C)(C)N[Si](C)(C)N[Si]1(C)C OFGKCVAPINDNBP-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- UGXMKSYKRKUMGY-UHFFFAOYSA-N 1,3,5,2,4,6-triazatrisilinane Chemical compound N1[SiH2]N[SiH2]N[SiH2]1 UGXMKSYKRKUMGY-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- QRARLMVCAONFEA-UHFFFAOYSA-N C(C)N1N(N([SiH2][SiH2][SiH2]1)CC)CC Chemical compound C(C)N1N(N([SiH2][SiH2][SiH2]1)CC)CC QRARLMVCAONFEA-UHFFFAOYSA-N 0.000 description 2
- FVNZCSOGAZHWHD-UHFFFAOYSA-N C(C)[Si]1([Si]([Si](NNN1)(CC)CC)(CC)CC)CC Chemical compound C(C)[Si]1([Si]([Si](NNN1)(CC)CC)(CC)CC)CC FVNZCSOGAZHWHD-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
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- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
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- VAVOGOPHLKDMPA-UHFFFAOYSA-N 2-ethyl-2,4,4,6,6-pentamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound CC[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 VAVOGOPHLKDMPA-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical compound [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Description
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)を有する、流動性膜を形成すること;及び、基板をプラズマに曝露することを含む。
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)に曝露して、基板上にケイ素含有膜を堆積すること;基板を反応物質に曝露してケイ素含有膜と反応させて基板上に炭窒化ケイ素(SiCN)膜を形成すること;前駆体及び反応物質の処理チャンバをパージすること;並びに、基板をプラズマに曝露することを含む。
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)を流す動作;処理チャンバの処理容積内に、トリシリルアミン(TSA)を含む反応物質を流す動作;前駆体及び反応物質の処理チャンバをパージする動作;基板をプラズマに曝露する動作;並びに、処理チャンバをパージする動作を実行させる命令を含む。
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)を有する。
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)を有する前駆体を流す動作;処理チャンバの処理容積内に、トリシリルアミン(TSA)を含む反応物質を流す動作;前駆体及び反応物質の処理チャンバをパージする動作;基板をプラズマに曝露する動作;並びに、処理チャンバをパージする動作を実行させる命令を含む。
炭窒化ケイ素膜を基板上に堆積させた。ヘキサメチルシクロトリシラザン(HMCTZ)及びトリシリルアミン(TSA)を約3.6:1の比で、ヘリウム(g)のキャリアガス中、反応チャンバ内に共流させた後、アンモニア(NH3)の流れを基板の上に流し、バイアス電力を約3000Wでオンにして、プラズマを生成させる。次に、基板を、Ar(g)の雰囲気中、約0.7Tの圧力で約15秒間、アンモニアプラズマで処理した。炭窒化ケイ素膜を基板上に堆積させた。次に、アルゴン(Ar)の流れを基板の上に30秒間、通過させた。基板を、窒素(N2)の雰囲気中、400℃、5Tの圧力で10分間、アニーリングした。
炭窒化ケイ素膜を基板上に堆積させた。ヘキサメチルシクロトリシラザン(HMCTZ)及びトリシリルアミン(TSA)を約3.6:1の比で、ヘリウム(g)のキャリアガス中、反応チャンバ内に共流させた後、アンモニア(NH3)の流れを基板の上に流し、バイアス電力を約3000Wでオンにして、プラズマを生成させる。炭窒化ケイ素膜を基板上に堆積させた。次に、約0.7Tでのアルゴン(Ar)の流れを基板の上に30秒間、通過させた。基板を、窒素(N2)の雰囲気中、400℃、5Tの圧力で10分間、アニーリングした。
炭窒化ケイ素膜を基板上に堆積させた。ヘキサメチルシクロトリシラザン(HMCTZ)及びトリシリルアミン(TSA)を約3.6:1の比で、ヘリウム(g)のキャリアガス中、反応チャンバ内に共流させた後、アンモニア(NH3)の流れを基板の上に流し、バイアス電力を約3000Wでオンにして、プラズマを生成させる。炭窒化ケイ素膜を基板上に堆積させた。基板を、窒素(N2)の雰囲気中、400℃、5Tの圧力で10分間、アニーリングした。
Claims (17)
- 膜を堆積する方法であって、
シランと、一般式(II)の構造を有する前駆体:
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)とを含む前駆体混合物に基板表面を曝露することによって、該基板表面に流動性膜を形成すること;
アンモニア(NH 3 )の流れを基板表面の上に流すこと;及び
バイアス電力をオンにして、プラズマを生成させること
を含み、
前記流動性膜が、5原子%以上の炭素含有量を有する、方法。 - 前記シランが、トリシリルアミン(TSA)、シラン、ジシラン、トリシラン、テトラシラン、高次のシラン、又は置換シランのうちの1つ以上を含む、請求項1に記載の方法。
- 前記流動性膜が約50Åから約1000Åまでの範囲の厚さを有する、請求項1に記載の方法。
- 前記流動性膜が約0.3Torrから約10Torrまでの範囲の圧力で形成される、請求項1に記載の方法。
- 前記流動性膜が約0℃から約200℃までの範囲の温度で形成される、請求項1に記載の方法。
- 前記流動性膜が炭窒化ケイ素(SiCN)膜である、請求項1に記載の方法。
- 膜を堆積する方法であって、
処理チャンバ内の基板を、一般式(II)の構造を有する前駆体:
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)に曝露して、ケイ素含有膜を前記基板上に堆積すること;
前記基板をシランに曝露して前記ケイ素含有膜と反応させて、前記基板上に5原子%以上の炭素含有量を有する炭窒化ケイ素(SiCN)膜を形成すること;
前記前駆体及びシランの前記処理チャンバをパージすること;
アンモニア(NH 3 )の流れを基板表面の上に流すこと;及び
バイアス電力をオンにして、プラズマを生成させること
を含む、方法。 - 前記シランが、トリシリルアミン(TSA)、シラン、ジシラン、トリシラン、テトラシラン、高次のシラン、又は置換シランのうちの1つ以上を含む、請求項7に記載の方法。
- 前記基板が前記前駆体及び前記シランに同時に曝露される、請求項7に記載の方法。
- 前記処理チャンバをパージすることが前記基板の上にパージガスを流すことを含む、請求項7に記載の方法。
- 前記パージガスが、アルゴン(Ar)、窒素(N2)、及びヘリウム(He)のうちの1つ以上から選択される、請求項10に記載の方法。
- 処理チャンバのコントローラによって実行されると、前記処理チャンバに次の動作:
基板を有する前記処理チャンバの処理容積内に前駆体混合物を流す動作であって、前記前駆体混合物が、シランと、一般式(II)の構造を有する前駆体:
(式中、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、及びR12は、水素(H)、置換又は非置換のアルキル、置換又は非置換のアルコキシ、置換又は非置換のビニル、シラン、置換又は非置換のアミン、又はハロゲン化物から独立して選択される)とを含む、前駆体混合物を流す動作;
前記処理チャンバの前記処理容積内に反応物質を流す動作であって、前記反応物質がトリシリルアミン(TSA)を含む、反応物質を流して、5原子%以上の炭素含有量を有する流動性膜を形成する動作;
前記前駆体及び前記反応物質の前記処理チャンバをパージする動作;
アンモニア(NH 3 )の流れを基板表面の上に流す動作;
バイアス電力をオンにして、プラズマを生成させる動作;及び
前記処理チャンバをパージする動作
を実行させる命令を含む、非一時的コンピュータ可読媒体。 - 前記前駆体混合物は、前駆体:シランの比が約3.6:1である、請求項1に記載の方法。
- バイアス電力をオンにして、プラズマを生成させることは、静電チャックに約200ワットのバイアスを印加することによって直接プラズマを生成させることを含む、請求項1に記載の方法。
- 2MHzで約1000ワットの追加RF電力を静電チャックに印加して、ウエハレベルで二重バイアスプラズマを生成させることをさらに含む、請求項14に記載の方法。
- バイアス電力をオンにして、プラズマを生成させることは、静電チャックに約200ワットのバイアスを印加することによって直接プラズマを生成させることを含む、請求項7に記載の方法。
- 2MHzで約1000ワットの追加RF電力を静電チャックに印加して、ウエハレベルで二重バイアスプラズマを生成させることをさらに含む、請求項16に記載の方法。
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