TWI547818B - 判定用於晶圓缺陷之設計座標 - Google Patents

判定用於晶圓缺陷之設計座標 Download PDF

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TWI547818B
TWI547818B TW101133540A TW101133540A TWI547818B TW I547818 B TWI547818 B TW I547818B TW 101133540 A TW101133540 A TW 101133540A TW 101133540 A TW101133540 A TW 101133540A TW I547818 B TWI547818 B TW I547818B
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defects
defect
wafer
inspection tool
determining
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TW201322030A (zh
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艾莉絲 張
萊爾特 麥可Ｊ 梵
艾倫 派克
庫夫朗 札法
桑透許 巴哈特阿恰亞
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克萊譚克公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • G06T7/74—Determining position or orientation of objects or cameras using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Description

判定用於晶圓缺陷之設計座標
本發明大體而言係關於判定用於在一晶圓上所偵測之缺陷之設計座標之方法及系統。
此申請案主張於2011年9月13日提出申請之標題為「1-Pixel Defect Location Accuracy(DLA)Through SEM Image Based Analysis and Cross Platform Integration」之美國臨時申請案第61/534,104號之優先權，該申請案如同完全陳述於本文中一般以引用方式併入。
以下說明及實例並不由於其包含於此章節中而被認為係先前技術。
在一半導體製造製程期間在各種步驟處使用檢驗處理程序以偵測晶圓上之缺陷從而促成在製造製程中之較高良率及因此較高利潤。檢驗一直總是製作半導體裝置之一重要部分。然而，隨著半導體裝置之尺寸減小，檢驗對可接受之半導體裝置之成功製造變得甚至更重要，此乃因較小缺陷可導致裝置不合格。
由於若干原因，準確地判定一晶圓上之一缺陷之位置係重要的。在當前所使用之方法中，缺陷位置準確性由於諸如階段準確性及運行時間對準之檢驗工具能力而受限制。相對於設計中之位置，可藉由補償偏移、比例及旋轉中之差異而將一晶圓座標系統人工地對準至一設計座標系統。然而，此方法並未解決來自關於條區之位置誤差之誤差。 因此，甚至在進階檢驗工具上，缺陷位置準確性(DLA)亦限制為所使用之檢驗像素之數倍。
上文所闡述之人工方法具有諸多缺點。舉例而言，僅藉由將晶圓座標系統人工對準至設計座標系統來改良DLA。校正通常限制於整個晶圓之兩個位點且因此其缺少對基於條區之誤差之考量。DLA誤差包含檢驗工具誤差及設計至晶圓對準誤差二者，藉此將DLA誤差限制於檢驗像素大小之數倍。
相應地，開發不具有上文所闡述之缺點中之一或多者之系統及/或方法將係有利的。
各種實施例之以下說明不應以任何方式視為限制隨附申請專利範圍之標的物。
一項實施例係關於一種用於判定在一晶圓上所偵測之缺陷之設計座標之電腦實施方法。該方法包含將一晶圓之一設計對準至由一缺陷查核工具針對由一檢驗工具在多個條區中所偵測之缺陷所產生之影像。該等缺陷包含在多個條區中之每一者中所偵測之兩個或兩個以上缺陷。換言之，在此方法中，將來自多個條區中之每一者之兩個或兩個以上缺陷對準至設計。該方法亦包含基於對準步驟之結果來判定缺陷中之每一者在設計座標中之一位置。另外，該方法包含：基於其中偵測到缺陷(來自彼條區之經偵測且對準之缺陷)中之每一者之條區、該等缺陷中之每一者之設計座標及由檢驗工具判定之該等缺陷中之每一者之一位置 (原始晶圓位置)來單獨地判定多個條區中之每一者之一缺陷位置偏移。此為每一條區產生一校正因子。該方法進一步包含：藉由取決於其中偵測到由該檢驗工具判定之其他缺陷之條區而將該等缺陷位置偏移中之一者應用於該等其他缺陷之位置(將適當條區校正因子應用於該缺陷)來判定由該檢驗工具在該多個條區中偵測到之其他缺陷之設計座標。由一電腦系統執行該對準步驟、判定位置、單獨地判定條區相關之缺陷位置偏移及判定設計座標。
上文所闡述之方法可如本文中進一步所闡述來執行。另外，上文所闡述之方法可包含本文中所闡述之任何(一或多個)其他方法之任何(一或多個)其他步驟。此外，上文所闡述之方法可藉由本文中所闡述之系統中之任一者來執行。
另一實施例係關於一種非暫時性電腦可讀媒體，其儲存可在一電腦系統上執行以用於執行用於判定在一晶圓上所偵測之缺陷之設計座標之一電腦實施方法之程式指令。該電腦實施方法包含上文所闡述之方法之步驟。可如本文中所闡述來進一步組態該電腦可讀媒體。可如本文中進一步所闡述來執行該電腦實施方法之步驟。另外，可為其執行該等程式指令之電腦實施方法可包含本文中所闡述之任何(一或多個)其他方法之任何(一或多個)其他步驟。
一額外實施例係關於一種經組態以判定在一晶圓上所偵測之缺陷之設計座標之系統。該系統包含一缺陷查核工具，該缺陷查核工具經組態以產生在由一檢驗工具在一晶 圓上所掃描之多個條區中所偵測之缺陷之影像。所成像之缺陷包含在多個條區中之每一者中所偵測之兩個或兩個以上缺陷。該系統亦包含經組態以執行上文所闡述方法之步驟之一電腦系統。該系統可如本文中所闡述來進一步組態。
在閱讀以下詳細說明並參考附圖時，本發明之其他目的及優點將變得顯而易見。
雖然易於對本發明做出各種修改及替代形式，但其特定實施例係以實例方式展示於圖式中且將在本文中詳細闡述。然而，應理解，圖式及對其之詳細說明並非意欲將本發明限制於所揭示之特定形式，而是相反，本發明意欲涵蓋歸屬於如由隨附申請專利範圍所定義之本發明精神及範疇內之所有修改形式、等效形式及替代形式。
現在轉至圖式，注意圖並未按比例繪製。特定而言，該等圖之元件中之某些元件之比例被大為誇張以強調該等元件之特性。亦注意，該等圖並未按相同比例繪製。已使用相同元件符號指示可以類似方式組態之在一個以上圖中展示之元件。
一項實施例係關於一種用於判定在一晶圓上所偵測之缺陷之設計座標之電腦實施方法。本文中所闡述之實施例整合數個零散技術以在檢驗之後改良缺陷位置。舉例而言，該方法包含：將一晶圓之一設計對準至由一缺陷查核工具針對由一檢驗工具在晶圓上所掃描之多個條區中所偵測之 缺陷所產生之影像。因此，本文中所闡述之實施例有效地整合檢驗、缺陷查核及設計技術。
該方法可或可不包含運行一缺陷檢驗。舉例而言，該方法可包含藉由使用檢驗工具掃描晶圓上之多個條區來檢驗該晶圓。另一選擇係，可自檢驗工具已將在多個條區中偵測到之缺陷之資訊儲存於其中之一電腦可讀儲存媒體獲取該資訊供用於本文中所闡述之方法中。在任一情形中，晶圓檢驗之結果可包含一檢驗結果檔案。檢驗結果檔案可被發送至缺陷查核工具，以使得缺陷查核工具可使用檢驗結果檔案中關於缺陷之資訊來執行本文中所闡述之一或多個步驟。以一類似方式，該方法可或可不包含使用缺陷查核工具產生影像。舉例而言，該方法可包含使用缺陷查核工具將晶圓上之缺陷成像。另一選擇係，可自缺陷查核工具已將由缺陷查核工具針對缺陷產生之影像儲存於其中之一電腦可讀儲存媒體獲取該等影像供用於本文中所闡述之方法中。該多個條區可包含在晶圓上所掃描之條區中之全部或每一者。以此方式，該方法可包含基於檢驗條區之對準以改良每一條區之缺陷位置準確性(DLA)。
在一項實施例中，在一圖形資料系統(GDS)或開放原圖系統交換標準(OASIS)檔案中提供設計。在另一實施例中，該方法包含自一電子設計自動化(EDA)工具獲取設計。以此方式，該方法可包含使用缺陷查核工具影像及設計佈局用於準確對準。在本文中所闡述之實施例中使用之設計或用於設計之資訊可包含此項技術中所習知之任何其 他設計資料。
在一項實施例中，缺陷查核工具係一掃描電子顯微鏡(SEM)。SEM可包含此項技術中所習知之任一適合之市售SEM缺陷查核工具，諸如eDR7000，其可自KLA-Tencor(Milpitas，Calif)購得。以此方式，將設計對準至由缺陷查核工具產生之影像可包含將SEM影像對準至設計。使用SEM影像至設計對準減輕對本文中所闡述之實施例所產生之結果之任何檢驗工具雜訊影響。
在另一實施例中，檢驗工具係一光學(亦即，基於光)檢驗工具。在某些實施例中，檢驗工具係一基於電子束之檢驗工具。檢驗工具可包含此項技術中所習知之任一適合之市售基於光或基於電子束之檢驗工具。另外，基於光之檢驗工具可係一明視場(BF)及/或暗視場(DF)檢驗工具。以此方式，本文中所闡述之實施例中所使用之檢驗工具不限於BF、DF及/或電子束檢驗。換言之，本文中所闡述之實施例獨立於檢驗工具平台。
缺陷包含在多個條區中之每一者中所偵測之兩個或兩個以上缺陷。舉例而言，該方法可包含使用每條區兩個缺陷以對準至設計影像。在一項實施例中，該方法包含基於其中偵測到缺陷(缺陷查核工具產生用於其之影像)之條區來對該等缺陷取樣。舉例而言，對缺陷取樣可包含使用保存於檢驗結果檔案中之條區資訊在一檢驗批量結果中自每一條區選擇相對小數目個缺陷。以此方式，該方法可包含基於檢驗條區之取樣以改良每一條區之DLA。該兩個或兩個 以上缺陷亦較佳地包含少於在多個條區中之每一者中所偵測之所有缺陷。在本文中所闡述之實施例中產生用於其之缺陷查核工具影像之缺陷之數目可取決於缺陷查核工具之速度而變化。舉例而言，對於較快的缺陷查核工具影像產生而言，同一概念可擴展至包含額外缺陷以達成甚至更好的準確性及穩健性。
在一項此實施例中，如圖1中所展示，晶圓圖10展示一檢驗之結果，在該檢驗中藉由偵測一晶圓上之缺陷14之一檢驗工具(圖1中未展示)來掃描該晶圓上之多個條區12。該晶圓圖亦展示晶圓上之晶粒16之位置。為簡單起見，在圖1中展示多個條區12中之僅一者。在此實例中，如上文所闡述對缺陷取樣可包含在檢驗之後自檢驗結果檔案取樣每條區兩個缺陷。更具體而言，可自圖1中所展示之條區取樣兩個缺陷，然後可自該多個條區中之另一條區取樣另外兩個缺陷，等等。在已基於逐條區地自該等條區對缺陷取樣之後，可使用缺陷查核工具(圖1中未展示)產生用於所取樣缺陷之影像18，或可自已由缺陷查核工具將影像儲存於其中之一電腦可讀儲存媒體獲取影像18。如圖1中所展示，影像18可係相對高解析度SEM影像。該等影像可由缺陷查核工具在如檢驗工具所判定之缺陷之位置處(例如，在缺陷位置Xi、Yi處)產生。然後對準步驟可包含將影像18對準至設計之部分20。設計之部分可稱為設計「剪輯」或GDS剪輯。
在某些實施例中，該方法包含使用由缺陷查核工具執行 之自動缺陷定位(ADL)來在影像中定位缺陷。舉例而言，一旦將缺陷成像於缺陷查核工具上，即可藉由ADL來在影像中定位缺陷。可以此項技術中所習知之任一適合方式執行ADL。
在一項實施例中，對準包含影像處理。在某些實施例中，影像處理可包含最佳化SEM影像以便達成晶圓上之每一層之最佳邊緣偵測。此訓練可自動化。在另一實施例中，對準步驟包含疊對設計之部分與影像。以此方式，對準步驟可包含疊對SEM影像與一設計佈局。舉例而言，如圖1中所展示，影像18可與設計之部分20疊對，且然後可更改影像18相對於設計之部分20之位置直至影像中之特徵實質上匹配設計之部分中之特徵為止。
該方法亦包含：基於對準步驟之結果來判定缺陷中之每一者在設計座標中之一位置。以此方式，該方法包含判定缺陷設計座標。舉例而言，在缺陷查核工具所產生影像中藉由ADL判定之缺陷位置可指派有在對準之後覆蓋該缺陷之設計中之對應位置之設計座標。以此方式，該方法可包含在具有SEM位置準確性之設計空間中判定缺陷之實質上精確位置。
該方法亦包含：基於其中偵測到該等缺陷中之每一者之條區、缺陷中之每一者之設計座標及由檢驗工具判定之缺陷中之每一者之一位置來單獨地判定多個條區中之每一者之一缺陷位置偏移(亦即，條區校正因子)。以此方式，該方法可包含判定多個條區中之每一者之一位置校正。舉例 而言，多個條區中之每一者之位置校正可基於對準至設計座標來判定。
該方法進一步包含：藉由取決於其中偵測到由該檢驗工具判定之其他缺陷之條區而將該等缺陷位置偏移中之一者應用於該等其他缺陷之位置(亦即，將適當條區校正因子應用於自彼條區所偵測之其他缺陷中之每一者)來判定由檢驗工具在該多個條區中偵測到之其他缺陷之設計座標。以此方式，該方法包含基於逐條區地將偏移應用於晶圓檢驗座標以判定經調整之缺陷位置(例如，經校正位置(Xf,Yf))。舉例而言，如上文所闡述，可使用兩個缺陷以產生一位置校正，然後可基於逐條區地將該位置校正應用於多個條區中之所有其他缺陷。另外，該方法包含基於影像之精確DLA。如此，可做出自一SEM影像至設計檔案對準之一缺陷座標調整。舉例而言，可基於逐條區地將多個條區中之每一者之位置校正應用於該等條區中之所有缺陷。以此方式，可調整缺陷位置以改良缺陷位置相對於設計之準確性。
經校正之缺陷位置可被發送至一檢驗結果檔案。舉例而言，該等結果可被發送回至檢驗結果檔案供進一步分析。經校正之位置(Xf,Yf)亦可用以達成新應用以及改良基於上下文之檢驗(CBI)操作。CBI可如在Kulkarni等人之美國專利第7,676,077號中所闡述來執行，該專利如同完全陳述於本文中一般以引用方式併入。
與設計對準、判定位置、單獨地判定缺陷位置偏移及判 定設計座標係由一電腦系統執行，此可如本文中進一步所闡述來組態。
在一項實施例中，該等缺陷及其他缺陷包含在晶圓上所偵測之所有缺陷。換言之，用以判定條區校正因子之缺陷及將適當條區校正因子應用於之缺陷可包含晶圓上之所有缺陷。以此方式，可判定在晶圓上所偵測之所有缺陷之設計座標。舉例而言，如圖1中所展示，可判定一晶圓上之晶粒24中之所有缺陷22以及該晶圓上之所有其他晶粒中之所有其他缺陷之經校正位置(Xf,Xy)。
在某些實施例中，與設計對準、判定位置、單獨地判定缺陷位置偏移及判定設計座標為其他缺陷產生準確至在檢驗工具之一個像素內之設計座標。舉例而言，本文中所闡述之實施例透過基於SEM影像之分析及跨平台整合來提供單像素DLA。特定而言，該等實施例藉由在一SEM查核工具上取樣一相對小子集之缺陷來在一晶圓檢驗結果中為所有缺陷提供+/- 1個檢驗像素之座標準確性。以此方式，本文中所闡述之實施例藉由對準至設計及針對所取樣缺陷在缺陷查核工具位置準確性(例如，ADL準確性)內修訂缺陷位置而克服檢驗工具之多個像素準確性限制。此等改良達成將促進使用檢驗及查核工具之新應用。另外，可在並未進一步改良檢驗工具效能之情形下如本文中所闡述來改良根據檢驗之缺陷位置。當前無其他可用技術可達成此座標準確性。
在另一實施例中，與設計對準、判定位置、單獨地判定 缺陷位置偏移及判定設計座標為其他缺陷產生具有約等於用於判定影像內之缺陷之位置之缺陷查核工具之準確性之一準確性的設計座標。舉例而言，可如本文中所闡述更改根據檢驗之缺陷位置以在缺陷查核工具位置誤差之限度內(例如，對於eDR7000系統約6 nm內)達成DLA座標準確性。特定而言，每一條區之階段抖動係約一像素之一半。當今之進階明視場工具可係約10 nm。因此，本文中所闡述之實施例可針對所取樣缺陷提供約6 nm準確性及針對其他缺陷提供約10 nm準確性。當前無其他可用技術可達成此位準之座標準確性。
本文中所闡述之實施例亦可包含使用缺陷查核工具及基於設計之對準以回饋至一檢驗結果檔案中供用於新使用情形開發。舉例而言，在一項實施例中，該方法包含：基於針對該等缺陷或該等其他缺陷中之一者所判定之設計座標在由檢驗工具為該晶圓產生之檢驗結果中選擇一點陣圖像素(亦稱為有缺陷像素)，及基於所選定(有缺陷)像素來更改用以檢驗晶圓之一處理程序。以此方式，該方法可包含使用經改良之DLA以識別受一缺陷影響之一單個像素以達成檢驗最佳化。此等實施例可用於某些缺陷之檢驗敏感度最佳化。舉例而言，該方法可導致先前未偵測到之晶圓上之「間隙」缺陷之偵測。另外，該方法可包含使用缺陷查核工具影像來調整每一缺陷之偏移。該方法亦可包含應用經校正之缺陷座標以判定檢驗最佳化所基於之點陣圖像素或有缺陷像素。
另外，該等實施例可包含基於不同缺陷類型來執行子像素分析以理解缺陷間行為。本文中所闡述之實施例亦可用於建立CBI，其某些實例闡述於上文所引用之Kulkarni之專利中。舉例而言，本文中所闡述之該等方法可包含對晶圓執行一熱掃描以偵測晶圓上之更多缺陷。然後可使用如本文中所闡述針對該等缺陷所判定之設計座標來識別設計中之熱點。舉例而言，可將與設計中之關鍵特徵相同或接近之缺陷之設計座標識別為設計中之熱點。基於所識別之熱點，可為其上將印刷該設計之其他晶圓建立一CBI處理程序。舉例而言，CBI處理程序可經建立以使得以比晶圓上之非熱點高的敏感度來檢驗熱點。
亦存在本文中所闡述方法之若干個其他可能應用，其中可能在檢驗中具有進一步改良。舉例而言，本文中所闡述之方法之結果可用於內置點陣圖(對於DRAM、快閃記憶體(FLASH)及SRAM而言)以將缺陷區域化至一特定記憶體單元。該等方法之結果亦可用於基於與缺陷之示意性疊對來取樣(例如，若一缺陷與設計中所指定之一金屬互連重疊，則可取樣彼缺陷)。另外，本文中所闡述之方法之結果可用於依單通孔或雙通孔將缺陷分級、用於N/P電晶體分離、用於未來層之良率預測(例如，觸點上之粒子)及用於依短線或虛線或者依在線上或在線之間將缺陷分級。
本文中所闡述之實施例具有優於當前所使用之用於判定缺陷位置之方法的若干個優點。舉例而言，先前所使用之方法將一晶圓級偏移應用於設計至晶圓對準。使用該先前 方法，DLA受限於人工對準至設計及檢驗系統誤差。另外，一替代方法將係把檢驗工具在晶圓之檢驗期間所產生之缺陷之相對高解析度光學分塊影像對準至一設計佈局供用於即時對準。然而，此方法要求可靠的分塊影像且亦要求一新影像匹配演算法。相比而言，缺陷查核工具影像(諸如SEM影像)與光學影像相比通常具有好得多的圖案保真度。如此，藉由使用影像處理將缺陷查核工具影像對準至設計，可達成缺陷至設計之準確對準且因此改良總體DLA。
上文所闡述之方法之實施例中之每一者可包含本文中所闡述之任何(一或多個)其他方法之任何(一或多個)其他步驟。此外，上文所闡述之方法之實施例中之每一者可藉由本文中所闡述之系統中之任一者執行。
本文中所闡述之所有方法可包含將該等方法實施例之一或多個步驟之結果儲存於一電腦可讀儲存媒體中。該等結果可包含本文中所闡述之結果中之任一者且可以此項技術中所習知之任一方式儲存。儲存媒體可包含本文中所闡述之任一儲存媒體或此項技術中所習知之任一其他適合之儲存媒體。在儲存該等結果之後，該等結果可在儲存媒體中存取及由本文中所闡述之方法或系統實施例中之任一者使用、經格式化以顯示給一使用者、由另一軟體模組、方法或系統使用，等等。
一額外實施例係關於一種非暫時性電腦可讀媒體，其儲存可在一電腦系統上執行以用於執行用於判定在一晶圓上 所偵測之缺陷之設計座標之一電腦實施方法之程式指令。圖2中展示一項此實施例。特定而言，如圖2中所展示，電腦可讀媒體50包含可在電腦系統54上執行之程式指令52。電腦實施方法包含上文所闡述之方法之步驟。可為其執行該等程式指令之電腦實施方法可包含本文中所闡述之任何(一或多個)其他步驟。
實施諸如本文中所闡述之方法的方法之程式指令52可儲存於電腦可讀媒體50上。該電腦可讀媒體可係諸如一磁碟或光碟或一磁帶之一儲存媒體，或此項技術中所習知之任一其他適合之非暫時性電腦可讀媒體。
可以包含基於程序之技術、基於組件之技術及/或物件導向之技術以及其他技術之各種方式中之任一者來實施該等程式指令。舉例而言，可視需要使用ActiveX控件、C++物件、JavaBeans、微軟基礎類別(「MFC」)或其他技術或方法來實施該等程式指令。
該電腦系統可採用各種形式，包含一個人電腦系統、影像電腦、主機電腦系統、工作站、網路器具、網際網路器具或其他裝置。一般而言，術語「電腦系統」可廣泛定義為囊括具有一或多個處理器之執行來自一記憶體媒體之指令之任一裝置。電腦系統亦可包含此項技術中所習知之任一適合處理器，諸如一平行處理器)。另外，電腦系統可包含具有高速度處理及軟體之一電腦平台作為一獨立工具或一網路化工具。
一額外實施例係關於一種經組態以判定用於在一晶圓上 所偵測之缺陷之設計座標之系統。圖3中展示此一系統之一項實施例。該系統包含缺陷查核工具80，該缺陷查核工具經組態以產生用於在由檢驗工具82在一晶圓上所掃描之多個條區中所偵測之缺陷之影像。該等缺陷包含在多個條區中之每一者中所偵測之兩個或兩個以上缺陷。缺陷查核工具80及檢驗工具82可如本文中所闡述來進一步組態。如圖3中所展示，缺陷查核工具及檢驗工具可以某一方式耦合以使得檢驗工具可將關於缺陷之資訊發送至缺陷查核工具。舉例而言，檢驗工具及缺陷查核工具可藉由一傳輸媒體(未展示)耦合，該傳輸媒體可包含有線及/或無線部分，檢驗工具可跨越該傳輸媒體將資訊發送至缺陷查核工具。另一選擇係，檢驗工具可藉由諸如一製作資料庫(fab database)之一電腦可讀儲存媒體(圖3中未展示)有效地耦合至缺陷查核工具，其中檢驗工具可將用於缺陷之資訊儲存於該製作資料庫中且缺陷查核工具可自該製作資料庫擷取缺陷資訊。
該系統亦包含經組態用於將晶圓之一設計對準至影像之電腦系統84，此可如本文中所闡述來執行。該電腦系統亦經組態用於基於對準步驟之結果來判定該等缺陷中之每一者在設計座標中之一位置，此可如本文中進一步所闡述來執行。另外，該電腦系統經組態用於基於其中偵測到該等缺陷中之每一者之條區、該等缺陷中之每一者之設計座標及由檢驗工具判定之該等缺陷中之每一者之一位置來單獨地判定多個條區中之每一者之一缺陷位置偏移，此可如本 文中所闡述來執行。該電腦系統進一步經組態用於藉由取決於其中偵測到由該檢驗工具判定之其他缺陷之條區而將該等缺陷位置偏移中之一者應用於該等其他缺陷之位置(將適當條區校正因子應用於彼等缺陷)來判定由檢驗工具在該多個條區中所偵測之其他缺陷之設計座標，此可如本文中進一步闡述來執行。
該電腦系統可以諸如上文所闡述之一方式耦合至缺陷查核工具及檢驗工具，以使得電腦系統可將資訊發送至缺陷查核工具及檢驗工具及自缺陷查核工具及檢驗工具接收資訊。該電腦系統亦可以一類似方式耦合至諸如一EDA工具之其他工具，其中電腦系統可自該等其他工具獲取設計供用於本文中所闡述之實施例中。該電腦系統及該系統可經組態以執行本文中所闡述之任何(一或多個)其他步驟且可如本文中所闡述來進一步組態。
鑒於此說明，熟習此項技術者將明瞭本發明之各種態樣之進一步修改及替代實施例。舉例而言，提供用於判定用於在一晶圓上所偵測之缺陷之設計座標之方法及系統。相應地，此說明應視為僅係例示性的，且係出於教示熟習此項技術者實施本發明之一般方式之目的。應理解，本文中所展示及闡述之本發明之形式應視為目前較佳之實施例。如熟習此項技術者在受益於本發明之此說明之後皆將明瞭，可替代本文中所圖解說明及闡述之彼等元件及材料，可顛倒部件及處理程序，且可獨立地利用本發明之某些特徵。可在不背離如以下申請專利範圍中所闡述之本發明精 神及範疇之情形下對本文中所闡述之元件做出改變。
10‧‧‧晶圓圖
12‧‧‧條區
14‧‧‧缺陷
16‧‧‧晶粒
18‧‧‧影像
20‧‧‧設計之部分
22‧‧‧缺陷
24‧‧‧晶粒
50‧‧‧電腦可讀媒體
52‧‧‧程式指令
54‧‧‧電腦系統
80‧‧‧缺陷查核工具
82‧‧‧檢驗工具
84‧‧‧電腦系統
圖1係圖解說明一種用於判定用於在一晶圓上所偵測之缺陷之設計座標之方法之一項實施例之一示意圖；圖2係圖解說明一種非暫時性電腦可讀媒體之一項實施例之一方塊圖，該非暫時性電腦可讀媒體包含可在一電腦系統上執行以用於執行本文中所闡述之電腦實施方法中之一或多者之程式指令；及圖3係圖解說明一種經組態以判定用於在一晶圓上所偵測之缺陷之設計座標之系統之一項實施例之一側視圖之一示意圖。
10‧‧‧晶圓圖
12‧‧‧條區
14‧‧‧缺陷
16‧‧‧晶粒
18‧‧‧影像
20‧‧‧設計之部分
22‧‧‧缺陷
24‧‧‧晶粒

Claims (27)

  1. 一種用於判定用於在一晶圓上所偵測之缺陷之設計座標之電腦實施方法，該方法包括：將一晶圓之一設計對準至由一缺陷查核工具在該晶圓上之缺陷的位置處所產生之影像，其中在該對準之前及在由該缺陷查核工具產生該等影像之前，由一晶圓檢驗工具在該晶圓上所掃描之多個條區中偵測該等缺陷，其中在該缺陷查核工具產生該等影像處之該等缺陷之該等位置係由該晶圓檢驗工具所判定，其中該等缺陷包括在該多個條區中之一第一者中所偵測之兩個或兩個以上第一缺陷及在該多個條區中之一第二者中所偵測之兩個或兩個以上第二缺陷，且其中該對準包含疊對該設計之部分與由該缺陷查核工具在該晶圓上之該等缺陷的該等位置處所產生之該等影像；基於該對準之結果來判定該等缺陷中之每一者在設計座標中之一位置；基於該等第一缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第一缺陷中之每一者之一位置來單獨地判定該多個條區中之該第一者之至少一第一缺陷位置偏移及基於該等第二缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第二缺陷中之每一者之一位置來單獨地判定該多個條區中之該第二者之至少一第二缺陷位置偏移；及藉由將該第一缺陷位置偏移應用於由該晶圓檢驗工具 判定之在該多個條區之該第一者中所偵測之其他缺陷之位置及藉由將該第二缺陷位置偏移應用於由該晶圓檢驗工具判定之在該多個條區之該第二者中所偵測之其他缺陷之位置來判定由該晶圓檢驗工具在該多個條區中所偵測之該等其他缺陷之設計座標，其中該對準、判定該位置、單獨地判定至少該第一及第二缺陷位置偏移及判定該等設計座標係由一電腦系統執行。
  2. 如請求項1之方法，其中該等缺陷及該等其他缺陷包括在該晶圓上所偵測之所有缺陷。
  3. 如請求項1之方法，其中該對準、判定該位置、單獨地判定至少該第一及第二缺陷位置偏移及判定該等設計座標為該等其他缺陷產生準確至在檢驗該晶圓時由該晶圓檢驗工具使用之一像素之一個像素大小內之設計座標。
  4. 如請求項1之方法，其中該對準、判定該位置、單獨地判定至少該第一及第二缺陷位置偏移及判定該等設計座標為該等其他缺陷產生具有約等於用於判定該等缺陷在該等影像內之一位置之該缺陷查核工具之一準確性之一準確性的設計座標。
  5. 如請求項1之方法，其中在一圖形資料系統(GDS)或開放原圖系統交換標準(OASIS)檔案中提供該設計。
  6. 如請求項1之方法，其進一步包括自一電子設計自動化(EDA)工具獲取該設計。
  7. 如請求項1之方法，其中該缺陷查核工具係一掃描電子顯微鏡。
  8. 如請求項1之方法，其中該晶圓檢驗工具係一光學檢驗工具。
  9. 如請求項1之方法，其中該晶圓檢驗工具係一基於電子束之檢驗工具。
  10. 如請求項1之方法，其進一步包括基於其中偵測到該等缺陷之該條區來對由該缺陷查核工具產生用於其之該等影像之該等缺陷取樣。
  11. 如請求項1之方法，其進一步包括使用由該缺陷查核工具執行之自動缺陷定位來在該等影像中定位該等缺陷。
  12. 如請求項1之方法，其中該對準進一步包括影像處理。
  13. 如請求項1之方法，其進一步包括基於針對該等缺陷或該等其他缺陷中之一者所判定之該等設計座標在由該晶圓檢驗工具為該晶圓產生之檢驗結果中選擇一點陣圖像素，及基於該選定像素來更改用以檢驗該晶圓之一處理程序。
  14. 一種非暫時性電腦可讀媒體，其儲存可在一電腦系統上執行以用於執行用於判定在一晶圓上所偵測之缺陷之設計座標之一電腦實施方法之程式指令，其中該電腦實施方法包括：將一晶圓之一設計對準至由一缺陷查核工具在該晶圓上之缺陷的位置處所產生之影像，其中在該對準之前及在由該缺陷查核工具產生該等影像之前，由一晶圓檢驗工具在該晶圓上所掃描之多個條區中偵測該等缺陷，其中在該缺陷查核工具產生該等影像處之該等缺陷之該等 位置係由該晶圓檢驗工具所判定，其中該等缺陷包括在該多個條區中之一第一者中所偵測之兩個或兩個以上第一缺陷及在該多個條區中之一第二者中所偵測之兩個或兩個以上第二缺陷，且其中該對準包含疊對該設計之部分與由該缺陷查核工具在該晶圓上之該等缺陷的該等位置處所產生之該等影像；基於該對準之結果來判定該等缺陷中之每一者在設計座標中之一位置；基於該等第一缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第一缺陷中之每一者之一位置來單獨地判定該多個條區中之該第一者之至少一第一缺陷位置偏移及基於該等第二缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第二缺陷中之每一者之一位置來單獨地判定該多個條區中之該第二者之至少一第二缺陷位置偏移；及藉由將該第一缺陷位置偏移應用於由該晶圓檢驗工具判定之在該多個條區之該第一者中所偵測之其他缺陷之位置及藉由將該第二缺陷位置偏移應用於由該晶圓檢驗工具判定之在該多個條區之該第二者中所偵測之其他缺陷之位置來判定由該晶圓檢驗工具在該多個條區中所偵測之該等其他缺陷之設計座標。
  15. 一種經組態以判定在一晶圓上所偵測之缺陷之設計座標之系統，該系統包括：一缺陷查核工具，其經組態以產生在該晶圓上之缺陷 的位置處之影像，其中由一晶圓檢驗工具在該晶圓上所掃描之多個條區中偵測該等缺陷，其中在該缺陷查核工具產生該等影像處之該等缺陷之該等位置係由該晶圓檢驗工具所判定，且其中該等缺陷包括在該多個條區中之一第一者中所偵測之兩個或兩個以上第一缺陷及在該多個條區中之一第二者中所偵測之兩個或兩個以上第二缺陷；及一電腦系統，其經組態用於：將該晶圓之一設計對準至該等影像，其中在該對準之前及在由該缺陷查核工具產生該等影像之前，由該晶圓檢驗工具偵測該等缺陷；基於該對準之結果來判定該等缺陷中之每一者在設計座標中之一位置；基於該等第一缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第一缺陷中之每一者之一位置來單獨地判定該多個條區中之該第一者之至少一第一缺陷位置偏移及基於該等第二缺陷中之每一者之該等設計座標及由該晶圓檢驗工具判定之該等第二缺陷中之每一者之一位置來單獨地判定該多個條區中之該第二者之至少一第二缺陷位置偏移；及藉由將該第一缺陷位置偏移應用於由該晶圓檢驗工具判定之在該多個條區之該第一者中所偵測之其他缺陷之位置及藉由將該第二缺陷位置偏移應用於由該晶圓檢驗工具判定之在該多個條區之該第二者中所偵測 之其他缺陷之位置來判定由該晶圓檢驗工具在該多個條區中所偵測之該等其他缺陷之設計座標。
  16. 如請求項15之系統，其中該等缺陷及該等其他缺陷包括在該晶圓上所偵測之所有缺陷。
  17. 如請求項15之系統，其中該對準、判定該位置、單獨地判定至少該第一及第二缺陷位置偏移及判定該等設計座標為該等其他缺陷產生準確至在檢驗該晶圓時由該晶圓檢驗工具使用之一像素之一個像素大小內之設計座標。
  18. 如請求項15之系統，其中該對準、判定該位置、單獨地判定至少該第一及第二缺陷位置偏移及判定該等設計座標為該等其他缺陷產生具有約等於用於判定該等缺陷在該等影像內之一位置之該缺陷查核工具之一準確性之一準確性的設計座標。
  19. 如請求項15之系統，其中在一圖形資料系統(GDS)或開放原圖系統交換標準(OASIS)檔案中提供該設計。
  20. 如請求項15之系統，其中該電腦系統係進一步經組態以自一電子設計自動化(EDA)工具獲取該設計。
  21. 如請求項15之系統，其中該缺陷查核工具係一掃描電子顯微鏡。
  22. 如請求項15之系統，其中該晶圓檢驗工具係一光學檢驗工具。
  23. 如請求項15之系統，其中該晶圓檢驗工具係一基於電子束之檢驗工具。
  24. 如請求項15之系統，其中該電腦系統係進一步經組態以 基於其中偵測到該等缺陷之該條區來對由該缺陷查核工具產生用於其之該等影像之該等缺陷取樣。
  25. 如請求項15之系統，其中該電腦系統係進一步經組態以使用由該缺陷查核工具執行之自動缺陷定位來在該等影像中定位該等缺陷。
  26. 如請求項15之系統，其中該對準進一步包括影像處理。
  27. 如請求項15之系統，其中該電腦系統係進一步經組態以基於針對該等缺陷或該等其他缺陷中之一者所判定之該等設計座標在由該晶圓檢驗工具為該晶圓產生之檢驗結果中選擇一點陣圖像素，及基於該選定像素來更改用以檢驗該晶圓之一處理程序。
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