TWI481007B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI481007B
TWI481007B TW097123751A TW97123751A TWI481007B TW I481007 B TWI481007 B TW I481007B TW 097123751 A TW097123751 A TW 097123751A TW 97123751 A TW97123751 A TW 97123751A TW I481007 B TWI481007 B TW I481007B
Authority
TW
Taiwan
Prior art keywords
conductive pads
wiring
conductive pad
electrically connected
wiring substrate
Prior art date
Application number
TW097123751A
Other languages
English (en)
Chinese (zh)
Other versions
TW200919700A (en
Inventor
石川智和
岡田三香子
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW200919700A publication Critical patent/TW200919700A/zh
Application granted granted Critical
Publication of TWI481007B publication Critical patent/TWI481007B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • H10P74/273Interconnections for measuring or testing, e.g. probe pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/231Configurations of stacked chips the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
TW097123751A 2007-09-12 2008-06-25 Semiconductor device TWI481007B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007236594A JP5222509B2 (ja) 2007-09-12 2007-09-12 半導体装置

Publications (2)

Publication Number Publication Date
TW200919700A TW200919700A (en) 2009-05-01
TWI481007B true TWI481007B (zh) 2015-04-11

Family

ID=40430861

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097123751A TWI481007B (zh) 2007-09-12 2008-06-25 Semiconductor device
TW104106919A TWI529908B (zh) 2007-09-12 2008-06-25 半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104106919A TWI529908B (zh) 2007-09-12 2008-06-25 半導體裝置

Country Status (5)

Country Link
US (4) US8159058B2 (https=)
JP (1) JP5222509B2 (https=)
KR (1) KR101426568B1 (https=)
CN (2) CN101388389A (https=)
TW (2) TWI481007B (https=)

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JP5587123B2 (ja) * 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN102890970B (zh) * 2011-07-21 2017-04-19 广东新岸线计算机系统芯片有限公司 一种pop封装的soc芯片dram输入/输出测试方法和装置
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JP5996177B2 (ja) 2011-10-21 2016-09-21 ルネサスエレクトロニクス株式会社 デバッグシステム、電子制御装置、情報処理装置、半導体パッケージおよびトランシーバ回路
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KR102032887B1 (ko) 2012-12-10 2019-10-16 삼성전자 주식회사 반도체 패키지 및 반도체 패키지의 라우팅 방법
US9875808B2 (en) 2013-01-15 2018-01-23 Micron Technology, Inc. Reclaimable semiconductor device package and associated systems and methods
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US20140361800A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Method and apparatus for high volume system level testing of logic devices with pop memory
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JP2016062212A (ja) * 2014-09-17 2016-04-25 株式会社東芝 半導体記憶装置
KR102296746B1 (ko) 2014-12-31 2021-09-01 삼성전자주식회사 적층형 반도체 패키지
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JP2017045915A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
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CN107995773A (zh) * 2017-11-24 2018-05-04 深圳创维数字技术有限公司 一种电路板及测试系统
CN110473839B (zh) 2018-05-11 2025-03-21 三星电子株式会社 半导体封装系统
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JP7324155B2 (ja) * 2020-01-27 2023-08-09 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
TW200919700A (en) 2009-05-01
KR101426568B1 (ko) 2014-08-05
US8698299B2 (en) 2014-04-15
US9330942B2 (en) 2016-05-03
US20090065773A1 (en) 2009-03-12
US8159058B2 (en) 2012-04-17
US20140070214A1 (en) 2014-03-13
US20140252357A1 (en) 2014-09-11
CN102867821A (zh) 2013-01-09
US20120153282A1 (en) 2012-06-21
CN101388389A (zh) 2009-03-18
JP5222509B2 (ja) 2013-06-26
TW201523836A (zh) 2015-06-16
US8766425B2 (en) 2014-07-01
KR20090027573A (ko) 2009-03-17
CN102867821B (zh) 2015-05-13
JP2009070965A (ja) 2009-04-02
TWI529908B (zh) 2016-04-11

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