TWI711131B - 晶片封裝結構 - Google Patents
晶片封裝結構 Download PDFInfo
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- TWI711131B TWI711131B TW108148495A TW108148495A TWI711131B TW I711131 B TWI711131 B TW I711131B TW 108148495 A TW108148495 A TW 108148495A TW 108148495 A TW108148495 A TW 108148495A TW I711131 B TWI711131 B TW I711131B
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Abstract
本發明提供一種晶片封裝結構,包括電路板、第一晶粒、間隔件以及第二晶粒。第一晶粒設置於電路板上,間隔件設置於電路板上,其中間隔件包括間隔部以及至少一穿孔結構,且穿孔結構貫穿間隔部。第二晶粒設置於第一晶粒與間隔件上,且第二晶粒透過間隔件電性連接到電路板。
Description
本發明有關於一種晶片封裝結構,特別是有關於一種具有多晶片堆疊的晶片封裝結構。
隨著電子產品之微小化與多功能化,多晶片的封裝結構在許多電子產品越來越常見,其係將兩個或兩個以上的晶片封裝在單一封裝結構中,以縮減整體體積。常見的多晶片封裝結構係將兩個以上的晶片彼此並排地設置於同一基板上,但並排設置晶片將使得封裝結構的面積隨著晶片數量的增加而加大。為解決此問題,目前發展出使用堆疊的方式來配置晶片。然而,堆疊晶片的方式仍存在缺點,例如垂直堆疊晶片會造成封裝結構的厚度過高,以及堆疊在最上方的晶片電連接到電路板的電阻會變大,以致於增加功率消耗。
根據本發明的一實施例,提供一種晶片封裝結構,其包括電路板、第一晶粒、間隔件以及第二晶粒。第一晶粒設置於電路板上,間隔件設置於電路板上,其中間隔件包括間隔部以及至少一第一穿孔結構,且第一穿孔結構貫穿間隔部。第二晶粒設置於第一晶粒與間隔件上,且第二晶粒透過間隔件電性連接到電路板。
透過具有穿孔結構的間隔件,可有效地縮短銲線的長度,以降低銲線的電阻值。藉此,可提升晶片封裝結構的效能或降低晶片封裝結構的功率消耗,還可降低晶片封裝結構的整體寬度。
1,2,3,4,5,6:晶片封裝結構
12:電路板
12a,14a:上接墊
12b,14b:下接墊
12c:上保護層
12d:下保護層
12e:內連線
12f:絕緣層
12S,14S,161S,562S1,163S:上表面
14:間隔件
14P:間隔部
161:第一晶粒
161a,162a,163a:輸入/輸出接墊
161b,50:導電凸塊
162,462,562:第二晶粒
163:第三晶粒
181:第一銲線
182:第二銲線
183:第三銲線
201,202,542,642:連接件
22:底部填充膠
24,26,32:黏著層
28:封裝膠體
30:導電球
34,36,44,46:介電層
38,48:導電層
562a:接墊
562D:元件
562M:晶粒主體
562S2:下表面
D1,D2:方向
L1,L2:長度
T:厚度
TH1:第一穿孔結構
TH2:第二穿孔結構
VD:俯視方向
W1,W2,W3:寬度
第1圖繪示本發明第一實施例的晶片封裝結構的俯視示意圖。
第2圖繪示沿著第1圖的剖線A-A’的剖視示意圖。
第3圖繪示本發明第二實施例的晶片封裝結構的剖視示意圖。
第4圖繪示本發明第三實施例的晶片封裝結構的剖視示意圖。
第5圖繪示本發明第四實施例的晶片封裝結構的剖視示意圖。
第6圖繪示本發明第五實施例的晶片封裝結構的剖視示意圖。
第7圖繪示本發明第六實施例的晶片封裝結構的剖視示意圖。
透過參考以下的詳細描述並同時結合圖式可以理解本發明,須注意的是,為了使讀者能容易瞭解及圖式的簡潔,本發明的圖式只繪出晶片封裝結構的至少一部分,且圖式中的特定元件並非依照實際比例繪圖。此外,圖式中各元件的數量及尺寸僅作為示意,並非用來限制本發明的範圍。
本發明通篇說明書與所附的申請專利範圍中會使用某些術語來指稱特定元件。本領域技術人員應理解,電子設備製造商可能會以不同的名稱來指稱相同的元件。本文並不意在區分那些功能相同但名稱不同的元件。在下文說明書與申請專利範圍中,“含有”與“包括”等詞為開放式詞語,因此其應被解釋為
“含有但不限定為...”之意。
應了解到,當元件或膜層被稱為在另一個元件或膜層“上”或“連接到”另一個元件或膜層時,它可以直接在此另一元件或膜層上或直接連接到此另一元件或層,或者兩者之間存在有插入的元件或膜層。相反地,當元件被稱為“直接”在另一個元件或膜層“上”或“直接連接到”另一個元件或膜層時,兩者之間不存在有插入的元件或膜層。
須知悉的是,以下所舉實施例可以在不脫離本發明的精神下,將數個不同實施例中的技術特徵進行替換、重組、混合以完成其他實施例。
第1圖繪示本發明第一實施例的晶片封裝結構的俯視示意圖,第2圖繪示沿著第1圖的剖線A-A’的剖視示意圖。晶片封裝結構1包括電路板12以及設置於電路板12上的至少一間隔件14與至少二晶粒(例如第一晶粒161與第二晶粒162),其中一個晶粒(例如第一晶粒161)設置在間隔件14與另一個晶粒(例如第二晶粒162)上,且設置在間隔件14上的晶粒可透過間隔件14電連接電路板12,藉此縮小水平方向上的晶片封裝結構1的寬度W1及/或降低晶片封裝結構1的厚度T。水平方向可例如為平行於電路板12上表面12S的方向D1、方向D2或平行於電路板12上表面12S且不同於方向D1與方向D2的方向。
電路板12可例如為印刷電路板(printed circuit board)或其他類型的電路板,但不限於此。在一些實施例中,電路板12可例如單層線路或多層線路的電路板。舉例來說,第2圖所示的電路板12可包括複數個上接墊12a、複數個下接墊12b、上保護層12c、下保護層12d、複數個內連線12e以及絕緣層12f,上保
護層12c設置於絕緣層12f上並可具有開口曝露出上接墊12a,下保護層12d設置於絕緣層12f下並可具有開口曝露出下接墊12b,且內連線12e貫穿絕緣層12f,使得上接墊12a可透過對應的內連線12e電連接到對應的下接墊12b。電路板12的上表面12S可例如為上保護層12c的外表面,但不限於此。本發明的電路板12不以此為限,且可依據實際需求調整電路板12的結構。
如第1圖與第2圖所示,第一晶粒161可例如透過覆晶方式與電路板12接合並電性連接。舉例來說,第一晶粒161可包括導電凸塊161b,設置於第一晶粒161的下表面,用以將第一晶粒161接合在電路板12的上接墊12a上。在一些實施例中,第一晶粒161與電路板12的電連接方式不限為覆晶接合,也可透過打線(wire bonding)方式達成。在一些實施例中,第一晶粒161與電路板12之間例如還可設置有底部填充膠(underfill)22,用以增強第一晶粒161與電路板12的接合可靠度。在本實施例中,第二晶粒162下可另設置有黏著層24,用以將第二晶粒162黏貼於第一晶粒161與間隔件14上。並且,第二晶粒162可透過打線方式與間隔件14電連接。
本發明的晶粒可例如為特殊應用積體電路(application specific integrated circuit,ASIC)晶片、記憶體晶片或其他類型的晶片,但不限於此。記憶體晶片可例如為快閃記憶體(flash memory)晶片或其他類型的記憶體晶片,但不限於此。不同的晶粒可具有相同或不相同的功能。晶粒也可被稱為半導體晶粒、晶片或積體電路晶粒。在一實施例中,第一晶粒161與第二晶粒162可具有不同的功能。舉例來說,第二晶粒162可為記憶體晶片,而第一晶粒161可為ASIC晶片,用於控制或驅動記憶體晶片。在此情況下,第一晶粒161可具有較多的輸入/輸出接墊161a,因此可透過覆晶方式與電路板12接合,而第二晶粒162可具有較
少的輸入/輸出接墊162a,因此第二晶粒162可透過打線方式與間隔件14電連接。舉例來說,第一晶粒161的輸入/輸出接墊161a的數量可多於第二晶粒162的輸入/輸出接墊162a的數量,但不限於此。在一些實施例中,第一晶粒161與第二晶粒162也可具有相同功能,例如皆為記憶體晶片。在此情況下,第一晶粒161可透過打線方式與電路板12電連接,且第二晶粒162可透過打線方式與間隔件14電連接。
間隔件14與第一晶粒161並排設置於電路板12上,使得間隔件14與第一晶粒161可用於支撐第二晶粒162。舉例來說,間隔件14可透過黏著層32黏貼在電路板12上。在本實施例中,間隔件14可包括間隔部14P以及至少一第一穿孔結構TH1,且第一穿孔結構TH1貫穿間隔部14P。間隔部14P可例如包括半導體材料、高分子材料或其他合適的支撐材料,但不限於此。半導體材料可例如包括矽,但不限於此。第一穿孔結構TH1可包括導電材料。在第2圖所示的實施例中,間隔件14可包括複數個第一穿孔結構TH1,垂直貫穿間隔部14P,且間隔件14可另包括至少一個上接墊14a以及複數個下接墊14b,上接墊14a設置於間隔部14P上並與對應的第一穿孔結構TH1連接,下接墊14b設置於間隔部14P下並與對應的第一穿孔結構TH1連接,使得上接墊14a可透過對應的第一穿孔結構TH1電連接到對應的下接墊14b。下接墊14b可電連接至對應的電路板12的上接墊12a。舉例來說,第一穿孔結構TH1垂直貫穿間隔部14P,使得上接墊14a與下接墊14b在俯視方向VD上彼此重疊,且間隔件14可另包括連接件201,用以將下接墊14b電連接至電路板12的上接墊12a。在一實施例中,電路板12的上接墊12a與間隔件14的下接墊14b在俯視方向VD上可不重疊,因此電路板12的至少一上接墊12a可與至少一第一穿孔結構TH1在晶片封裝結構1的俯視方向VD上不重疊,但不以此為限。在第2圖所示的實施例中,連接件201可例如為單一導電層。導電層可例如
包括金屬或其他適合的導電材料。雖然第2圖中的連接件201與下接墊14b未連接,但實際上連接件201可在其他地方與下接墊14b連接,以將彼此對應的下接墊14b與上接墊12a電性連接。下接墊14b與連接件201可由相同的導電層所形成或由不同的導電層所形成。所述導電層可例如包括金屬或其他合適的導電材料,但不限於此。在一些實施例中,連接件201可例如包括重佈線層,但不限於此。需說明的是,為了降低設置在間隔件14與第一晶粒161上的第二晶粒162的傾斜,間隔件14的間隔部14P的上表面14S的高度與第一晶粒161的上表面161S可實質上位於同一水平面,舉例來說,間隔部14P的上表面14S與電路板12的上表面12S之間的間距以及第一晶粒161的上表面161S與電路板12的上表面12S之間的間距可大致上相同。
如第2圖所示,在一實施例中,晶片封裝結構1可包括至少一條第一銲線181,從第二晶粒162(例如第二晶粒162的輸入/輸出接墊162a)延伸到間隔件14(例如間隔件14的上接墊14a),使得第二晶粒162可透過第一銲線181電連接到間隔件14的上接墊14a、第一穿孔結構TH1與下接墊14b,進而透過間隔件14電連接到電路板12。在一實施例中,第一銲線181的一端可直接與第二晶粒162的輸入/輸出接墊162a接合,另一端可直接與間隔件14的上接墊14a接合,但本發明不限於此。值得一提的是,由於間隔件14的上接墊14a的高度高於電路板12的上接墊12a的高度,因此第一銲線181的長度可縮短,以降低第一銲線181的電阻值。並且,間隔件14的第一穿孔結構TH1的電阻值可小於第一銲線181的電阻值,因此第二晶粒162電連接到電路板12的電阻值可有效地降低,進而提升晶片封裝結構1的效能或降低晶片封裝結構1的功率消耗。此外,由於第一銲線181投影在水平方向上的長度L1可縮短,因此可縮減晶片封裝結構1在水平方向上的整體寬度W1。
在一些實施例中,如第1圖與第2圖所示,晶片封裝結構1還可包括第三晶粒163、另一黏著層26以及至少一條第二銲線182。需說明的是,雖然第2圖同時顯示第一銲線181與第二銲線182,但第一銲線181與第二銲線182可位於不同的剖面上。第三晶粒163透過黏著層26黏貼在第二晶粒162上,且第二銲線182從第三晶粒163的輸入/輸出接墊163a(第三晶粒163的上表面)延伸到間隔件14的上接墊14a,用以將第三晶粒163電連接到間隔件14中的第一穿孔結構TH1,因此第三晶粒163可透過第二銲線182與間隔件14電連接到電路板12。在一實施例中,第二銲線182的一端可直接與第三晶粒163的輸入/輸出接墊163a接合,另一端可直接與間隔件14對應的上接墊14a接合,但本發明不限於此。需注意的是,第三晶粒163與第二晶粒162可分別電連接至不同且彼此絕緣的上接墊14a,以傳送不同的訊號。在一些實施例中,當第三晶粒163的其中一輸入/輸出接墊163a與第二晶粒162的其中一輸入/輸出接墊162a傳送相同的訊號時,所述輸入/輸出接墊163a與對應的輸入/輸出接墊162a可電連接至相同或彼此電性連接的上接墊14a。值得說明的是,第二銲線182的長度可因間隔件14的設置而縮短,進而降低第二銲線182的電阻值,以提升晶片封裝結構1的效能或降低晶片封裝結構1的功率消耗。並且,由於間隔件14的設置降低了第二銲線182兩端的高低落差,因此可降低第二銲線182高於第三晶粒163的部分的高度,還可縮短第二銲線182投影在水平方向上的長度L2,進而縮減晶片封裝結構1在水平方向上的整體寬度W1。在一些實施例中,第三晶粒163可與第二晶粒162具有相同的功能,例如皆為記憶體晶片。黏著層24、26、32可例如分別包括晶粒黏著膜(die attach film,DAF)或其他適合的絕緣黏著材料。
在一些實施例中,晶片封裝結構1可包括複數個間隔件14、複數個第
二晶粒162以及複數個第三晶粒163。在第1圖與第2圖所示的晶片封裝結構1的實施例中,間隔件14的數量、第二晶粒162的數量以及第三晶粒163的數量以兩個為例,但不限於此。在一些實施例中,間隔件14可分別設置於第一晶粒161的兩側,舉例來說,間隔件14的第一穿孔結構TH1可位於堆疊晶粒的外側,但不限於此。第二晶粒162除了設置於對應的間隔件14上之外可堆疊在同一第一晶粒161上,且第三晶粒163可分別設置在對應的第二晶粒162上,使得第二晶粒162與第三晶粒163皆可透過間隔件14電連接到電路板12,以縮減第一銲線181與第二銲線182的電阻值。在一些實施例中,每個間隔件14可具有類似或相同的結構,每個第二晶粒162可具有類似或相同的功能,每個第三晶粒163可具有類似或相同的功能,但不以此為限。
在一些實施例中,晶片封裝結構1還可包括封裝膠體28,設置於第一晶粒161、第二晶粒162、第三晶粒163、第一銲線181、第二銲線182與間隔件14上,並將其密封在電路板12上,因此可用以保護晶粒、銲線與間隔件14。在一些實施例中,晶片封裝結構1還可包括複數個導電球30,分別設置在電路板12的下接墊12b上,使晶片封裝結構1可進一步設置並電連接至其他元件、載板或電路板上。
本發明的晶片封裝結構並不以上述實施例為限,且以下將進一步描述本揭露的其他實施例。為方便比較各實施例與簡化說明,下文中將使用相同標號標注相同元件,且下文將詳述不同實施例之間的差異,並不再對相同部分作贅述。
請參考第3圖,其繪示本發明第二實施例的晶片封裝結構的剖視示意
圖。本實施例的晶片封裝結構2與上述實施例的差異在於,連接件202可包括重佈線層,形成於間隔部14P的下表面與下接墊14b上。在第3圖的實施例中,重佈線層可包括兩層介電層34、36以及一層導電層38,導電層38設置於介電層34、36之間,且介電層34可具有開口,使導電層38可透過介電層34的開口與下接墊14b電連接。另外,介電層36可具有開口,對應電路板12的上接墊12a,使得導電層38可透過導電凸塊40電連接到電路板12。在一些實施例中,重佈線層可包括三層或更多的介電層以及兩層或更多的導電層。
請參考第4圖,其繪示本發明第三實施例的晶片封裝結構的剖視示意圖。本實施例的晶片封裝結構3與上述實施例的差異在於,晶片封裝結構3可另包括至少一第三銲線183,從第一晶粒161的上表面161S延伸到電路板12的其中一上接墊12a,使第一晶粒161可透過第三銲線183電連接至電路板12。舉例來說,第一晶粒161可具有較少的接墊,因此接墊設置在第一晶粒161的上表面161S。第一晶粒161與第二晶粒162可例如具有相同功能,例如均為記憶體晶片。在一些實施例中,第三銲線183的數量不限如第3圖所示,且可為複數條。需說明的是,用於將第二晶粒162黏貼在第一晶粒161上的黏著層24的厚度需大於第三銲線183位於第一晶粒161的上表面161S上的部分的高度,以降低第二晶粒162的設置對第三銲線183的損壞。在一些實施例中,晶片封裝結構3可具有第2圖或第3圖所示的實施例或兩者的組合的內容。
請參考第5圖,其繪示本發明第四實施例的晶片封裝結構的剖視示意圖。本實施例的晶片封裝結構4與上述實施例的差異在於,在水平方向(例如方向D1)上,第二晶粒462的寬度W2大於第一晶粒161的寬度W3。在一些實施例中,第二晶粒462的面積可大於第一晶粒161的面積,但不限於此。在第5圖的實施例
中,晶片封裝結構4可僅包括單一第二晶粒462,設置在第一晶粒161與兩間隔件14上,且第三晶粒163設置在第二晶粒462上,但本發明不以此為限。在一些實施例中,第二晶粒462的範圍可依據實際需求調整,而堆疊在第一晶粒161與至少一間隔件14上。在一些實施例中,晶片封裝結構4可具有第2圖、第3圖或第4圖所示的實施例或兩者的組合的內容。
請參考第6圖,其繪示本發明第五實施例的晶片封裝結構的剖視示意圖。本實施例的晶片封裝結構5與上述實施例的差異在於,至少一個第二晶粒562可另包括晶粒主體562M、至少一第二穿孔結構TH2以及接墊562a,第二穿孔結構TH2貫穿晶粒主體562M從晶粒主體562M的上表面562S1延伸到晶粒主體562M的下表面562S2,且第二銲線182係從第三晶粒163的上表面163S延伸到第二晶粒562的接墊562a。在一實施例中,第二穿孔結構TH2在俯視方向VD上可與接墊562a重疊。此外,第二晶粒562還可包括連接件542,設置於晶粒主體562M的下表面562S2上,並與第二穿孔結構TH2電連接。透過連接件542,電連接第二銲線182的第二晶粒562的接墊562a可電連接到間隔件14的上接墊14a。在一實施例中,間隔件14與第二穿孔結構TH2電連接的第一穿孔結構TH1可在俯視方向VD上可與第二晶粒562重疊,使得連接件542可透過間隔件14的上接墊14a與第一穿孔結構TH1電連接。在一實施例中,彼此電連接的第一穿孔結構TH1與第二穿孔結構TH2在俯視方向VD上可重疊或不重疊。需注意的是,接墊562a與晶粒主體562M中的元件562D是電性絕緣,也就是說,接墊562a不同於第二晶粒562中用於元件562D的訊號輸入或輸出的輸入/輸出接墊162a(如第1圖所示)。並且,第二晶粒562的輸入/輸出接墊162a(如第1圖所示)仍可透過第一銲線181電連接到間隔件14。在第6圖的實施例中,連接件542可例如為單層導電層,但不限於此。所述導電層可例如包括金屬或其他合適的導電材料,但不限於此。在一些實施
例中,晶片封裝結構5可僅包括單一個第三晶粒163,透過黏著層26設置於至少兩個第二晶粒562上。在一些實施例中,晶片封裝結構5可具有第2圖、第3圖、第4圖或第5圖所示的實施例或上述實施例的任兩者的組合的內容。
值得說明的是,透過第二穿孔結構TH2的設置,第二銲線182僅需從第三晶粒163的上表面163S延伸到第二晶粒562的接墊562a,而不需延伸到位於第二晶粒562下的間隔件14,因此可降低第二銲線182的長度。例如,縮短第二銲線182投影在水平方向(例如方向D1)的長度L2,或降低第二銲線182位於第三晶粒163的上表面163S上的部分的高度。因此,可提升晶片封裝結構5的效能或降低晶片封裝結構5的功率消耗,還可降低晶片封裝結構5的整體寬度W1。
請參考第7圖,其繪示本發明第六實施例的晶片封裝結構的剖視示意圖。本實施例的晶片封裝結構6與上述實施例的差異在於,第二晶粒562的連接件642可包括重佈線層,形成於晶粒主體562M的下表面562S2上。在第7圖的實施例中,重佈線層可包括兩層介電層44、46以及一層導電層48,導電層48設置於介電層44、46之間,且介電層44可具有開口,使導電層48可透過介電層44的開口與第二穿孔結構TH2電連接。另外,介電層46可具有開口,對應間隔件14的上接墊14a,使得導電層48可透過導電凸塊50電連接到間隔件14,進而電連接到電路板12。在一些實施例中,重佈線層可包括三層或更多的介電層以及兩層或更多的導電層。所述導電層可例如包括金屬或其他合適的導電材料,但不限於此。在一些實施例中,晶片封裝結構6可具有第2圖、第3圖、第4圖或第5圖所示的實施例或上述實施例的任兩者的組合的內容。
綜合上述,在本發明的晶片封裝結構中,透過具有穿孔結構的間隔
件及/或具有穿孔結構的晶粒,可有效地縮短銲線的長度,以降低銲線的電阻值。藉此,可提升晶片封裝結構的效能或降低晶片封裝結構的功率消耗,還可降低晶片封裝結構的整體寬度。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
1:晶片封裝結構
12:電路板
12a,14a:上接墊
12b,14b:下接墊
12c:上保護層
12d:下保護層
12e:內連線
12f:絕緣層
12S,14S,161S,163S:上表面
14:間隔件
14P:間隔部
161:第一晶粒
161a:輸入/輸出接墊
161b:導電凸塊
162:第二晶粒
163:第三晶粒
181:第一銲線
182:第二銲線
201:連接件
22:底部填充膠
24,26,32:黏著層
28:封裝膠體
30:導電球
D1,D2:方向
L1,L2:長度
T:厚度
TH1:第一穿孔結構
VD:俯視方向
W1:寬度
Claims (13)
- 一種晶片封裝結構,包括:一電路板;一第一晶粒,設置於該電路板上;一間隔件,設置於該電路板上,其中該間隔件包括一間隔部以及至少一第一穿孔結構,且所述至少一第一穿孔結構貫穿該間隔部;以及一第二晶粒,設置於該第一晶粒與該間隔件上,且該第二晶粒透過該間隔件電性連接到該電路板,其中該第二晶粒在該晶片封裝結構的俯視方向上與該間隔件重疊。
- 如請求項1所述的晶片封裝結構,另包括至少一第一銲線,從該第二晶粒的上表面延伸到該間隔件,且該第二晶粒透過該至少一第一銲線電連接至該至少一第一穿孔結構。
- 如請求項1所述的晶片封裝結構,其中該第一晶粒以覆晶方式與該電路板接合。
- 如請求項2所述的晶片封裝結構,其中該第一晶粒與該第二晶粒具有不同功能。
- 如請求項1所述的晶片封裝結構,其中該間隔件另包括一連接件,設置於該間隔部與該電路板之間。
- 如請求項1所述的晶片封裝結構,其中該第二晶粒的面積大於該第一 晶粒的面積。
- 如請求項1所述的晶片封裝結構,其中該電路板包括至少一上接墊,電性連接至該至少一第一穿孔結構,且該至少一上接墊與該至少一第一穿孔結構在該晶片封裝結構的該俯視方向上不重疊。
- 如請求項1所述的晶片封裝結構,另包括一第三晶粒以及至少一第二銲線,該第三晶粒設置於該第二晶粒上,且該至少一第二銲線連接該第三晶粒的上表面。
- 如請求項8所述的晶片封裝結構,其中該至少一第二銲線從該第三晶粒的上表面延伸到該間隔件,且該第三晶粒透過該至少一第二銲線電連接該間隔件。
- 如請求項8所述的晶片封裝結構,其中該第二晶粒包括一晶粒主體以及至少一第二穿孔結構,從該晶粒主體的上表面延伸到該晶粒主體的下表面,且該第三晶粒透過該至少一第二銲線與該至少一第二穿孔結構電連接該間隔件。
- 如請求項1所述的晶片封裝結構,另包括至少一第三銲線,從該第一晶粒的上表面延伸到該電路板,且該第一晶粒透過該至少一第三銲線電連接至該電路板。
- 如請求項11所述的晶片封裝結構,其中該第一晶粒與該第二晶粒具 有相同功能。
- 如請求項1所述的晶片封裝結構,其中該間隔件另包括一上接墊以及一下接墊,該上接墊設置於該間隔部上,該下接墊設置於該間隔部下,且該上接墊透過該第一穿孔結構電連接該下接墊。
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