KR101426568B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR101426568B1
KR101426568B1 KR1020080082975A KR20080082975A KR101426568B1 KR 101426568 B1 KR101426568 B1 KR 101426568B1 KR 1020080082975 A KR1020080082975 A KR 1020080082975A KR 20080082975 A KR20080082975 A KR 20080082975A KR 101426568 B1 KR101426568 B1 KR 101426568B1
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KR
South Korea
Prior art keywords
conductive pads
wiring
wiring board
chip
surface conductive
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KR1020080082975A
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English (en)
Korean (ko)
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KR20090027573A (ko
Inventor
토시카즈 이시카와
미카코 오카다
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20090027573A publication Critical patent/KR20090027573A/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • H10P74/273Interconnections for measuring or testing, e.g. probe pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/231Configurations of stacked chips the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020080082975A 2007-09-12 2008-08-25 반도체장치 Active KR101426568B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00236594 2007-09-12
JP2007236594A JP5222509B2 (ja) 2007-09-12 2007-09-12 半導体装置

Publications (2)

Publication Number Publication Date
KR20090027573A KR20090027573A (ko) 2009-03-17
KR101426568B1 true KR101426568B1 (ko) 2014-08-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080082975A Active KR101426568B1 (ko) 2007-09-12 2008-08-25 반도체장치

Country Status (5)

Country Link
US (4) US8159058B2 (https=)
JP (1) JP5222509B2 (https=)
KR (1) KR101426568B1 (https=)
CN (2) CN101388389A (https=)
TW (2) TWI481007B (https=)

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JP4185499B2 (ja) * 2005-02-18 2008-11-26 富士通マイクロエレクトロニクス株式会社 半導体装置
JP5222509B2 (ja) * 2007-09-12 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置
JP5265183B2 (ja) * 2007-12-14 2013-08-14 新光電気工業株式会社 半導体装置
KR20100058359A (ko) * 2008-11-24 2010-06-03 삼성전자주식회사 다층 반도체 패키지, 그것을 포함하는 반도체 모듈 및 전자신호 처리 시스템 및 다층 반도체 패키지의 제조 방법
US8716868B2 (en) 2009-05-20 2014-05-06 Panasonic Corporation Semiconductor module for stacking and stacked semiconductor module
US8451620B2 (en) * 2009-11-30 2013-05-28 Micron Technology, Inc. Package including an underfill material in a portion of an area between the package and a substrate or another package
JP5586267B2 (ja) * 2010-02-24 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置
US8288849B2 (en) * 2010-05-07 2012-10-16 Texas Instruments Incorporated Method for attaching wide bus memory and serial memory to a processor within a chip scale package footprint
KR101744756B1 (ko) * 2010-06-08 2017-06-09 삼성전자 주식회사 반도체 패키지
JP5587123B2 (ja) * 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN102890970B (zh) * 2011-07-21 2017-04-19 广东新岸线计算机系统芯片有限公司 一种pop封装的soc芯片dram输入/输出测试方法和装置
KR101831692B1 (ko) * 2011-08-17 2018-02-26 삼성전자주식회사 기능적으로 비대칭인 전도성 구성 요소들을 갖는 반도체 소자, 패키지 기판, 반도체 패키지, 패키지 적층 구조물 및 전자 시스템
JP5996177B2 (ja) 2011-10-21 2016-09-21 ルネサスエレクトロニクス株式会社 デバッグシステム、電子制御装置、情報処理装置、半導体パッケージおよびトランシーバ回路
JP2013125765A (ja) 2011-12-13 2013-06-24 Elpida Memory Inc 半導体装置
KR20140059569A (ko) * 2012-11-08 2014-05-16 삼성전자주식회사 지그재그형 패드 배선 구조를 포함하는 반도체 소자
KR102032887B1 (ko) 2012-12-10 2019-10-16 삼성전자 주식회사 반도체 패키지 및 반도체 패키지의 라우팅 방법
US9875808B2 (en) 2013-01-15 2018-01-23 Micron Technology, Inc. Reclaimable semiconductor device package and associated systems and methods
KR102110984B1 (ko) 2013-03-04 2020-05-14 삼성전자주식회사 적층형 반도체 패키지
US20140361800A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Method and apparatus for high volume system level testing of logic devices with pop memory
US9443758B2 (en) 2013-12-11 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Connecting techniques for stacked CMOS devices
JP2016062212A (ja) * 2014-09-17 2016-04-25 株式会社東芝 半導体記憶装置
KR102296746B1 (ko) 2014-12-31 2021-09-01 삼성전자주식회사 적층형 반도체 패키지
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
JP2017045915A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
US11064609B2 (en) 2016-08-04 2021-07-13 X Display Company Technology Limited Printable 3D electronic structure
CN107995773A (zh) * 2017-11-24 2018-05-04 深圳创维数字技术有限公司 一种电路板及测试系统
CN110473839B (zh) 2018-05-11 2025-03-21 三星电子株式会社 半导体封装系统
US10991638B2 (en) 2018-05-14 2021-04-27 Samsung Electronics Co., Ltd. Semiconductor package system
KR102573573B1 (ko) * 2019-10-25 2023-09-01 삼성전자주식회사 반도체 패키지
TWI711131B (zh) * 2019-12-31 2020-11-21 力成科技股份有限公司 晶片封裝結構
JP7324155B2 (ja) * 2020-01-27 2023-08-09 ルネサスエレクトロニクス株式会社 半導体装置
TW202219517A (zh) * 2020-11-03 2022-05-16 點序科技股份有限公司 測試裝置

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US20030102547A1 (en) * 1999-12-16 2003-06-05 Mitsutoshi Higashi Semiconductor device and production method thereof
JP2006086360A (ja) * 2004-09-16 2006-03-30 Fujitsu Ltd 半導体装置及びその製造方法
JP2007123466A (ja) * 2005-10-27 2007-05-17 Matsushita Electric Ind Co Ltd 積層半導体装置及び積層半導体装置の下層モジュール
US20080185708A1 (en) * 2007-02-05 2008-08-07 Bridge Semiconductor Corporation Stackable semiconductor package having metal pin within through hole of package

Also Published As

Publication number Publication date
TW200919700A (en) 2009-05-01
US8698299B2 (en) 2014-04-15
US9330942B2 (en) 2016-05-03
US20090065773A1 (en) 2009-03-12
US8159058B2 (en) 2012-04-17
US20140070214A1 (en) 2014-03-13
US20140252357A1 (en) 2014-09-11
CN102867821A (zh) 2013-01-09
US20120153282A1 (en) 2012-06-21
CN101388389A (zh) 2009-03-18
JP5222509B2 (ja) 2013-06-26
TW201523836A (zh) 2015-06-16
TWI481007B (zh) 2015-04-11
US8766425B2 (en) 2014-07-01
KR20090027573A (ko) 2009-03-17
CN102867821B (zh) 2015-05-13
JP2009070965A (ja) 2009-04-02
TWI529908B (zh) 2016-04-11

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