TWI419198B - 用於基材處理腔室之製程套件,包含製程套件之濺射腔室,以及製程套件之元件 - Google Patents
用於基材處理腔室之製程套件,包含製程套件之濺射腔室,以及製程套件之元件 Download PDFInfo
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Description
本發明的實施方式關於用於基材處理腔室的製程套件。
在積體電路和顯示器的製造中,諸如半導體晶圓或顯示器面板的基材放置在基材處理腔室中,在腔室中設定處理條件以在基材上沈積或蝕刻材料。典型的製程腔室包含腔室元件,其包括圍繞製程區域的圍護壁、用於提供腔室中製程氣體的氣體供應、用於激發製程氣體以處理基材的氣體激發器、用於去除廢氣並保持腔室中的氣壓的氣體排放裝置,以及用於保持基材的基材支撐件。該腔室可包括,例如,濺射(PVD)、化學氣相沈積(CVD)和蝕刻腔室。在PVD腔室中,通過激發的氣體濺射靶,以濺射靶材,其隨後沈積在面對靶的基材上。
在濺射製程中,從靶濺射的材料還沈積在圍繞靶的腔室元件的邊緣上,這是不期望的。週邊靶區域具有暗區,在該暗區中濺射材料由於在該區域中的離子散射而再沈積。在該區域中的濺射材料的積累和聚集是不期望的,原因在於所積累的沈積物需要靶和圍繞元件的拆卸和清洗或替換,可導致電漿短路,並且可導致靶與腔室壁之間産生電弧。這些沈積物還經常由於熱應力而分離和剝離,從而落在腔室和元件內部並污染腔室和元件。
一製程套件,其包含圍繞基材支撐件和腔室側壁配置的護板、蓋環和沈積環,通常用於接收過量的濺射材料以保護並防止在腔室壁和其他元件表面上沈積。週期地,製程套件元件被拆開並從腔室去除,用於清洗掉積累的沈積物。因而,期望具有製程套件元件,其設計以容納並容忍更大量的積累沈積物,而不彼此粘結或者不會粘到基材,或者導致製程清洗迴圈之間的沈積物剝離。還期望具有製程套件,其包含較少的部件或元件,並且具有彼此相關的形狀和配置以減少形成於製程腔室內部表面上的濺射沈積物量。
當腔室襯墊和護板加熱高達過高溫度時,由於暴露於腔室中的濺射電漿以及護板與腔室元件之間的熱導率,産生另一問題。例如,其難以控制由低導熱率材料製成的護板的溫度。在與製成元件諸如適配器(adapter)的接觸介面處的熱電阻也影響護板溫度。在護板和適配器之間的低夾持力還可引起護板的加熱。如果不受熱控制,則在連續的基材處理期間,護板的溫度在理想的室溫條件和高溫之間迴圈。當高應力金屬的製程沈積物沈積到護板上並且經受大溫度振幅時,薄膜到護板的粘結以及薄膜自身的內聚力將顯著降低,原因在於,例如薄膜和其下護板之間的熱膨脹的係數錯配。期望在基材處理期間降低護板和襯墊的溫度,從而減少積累的沈積物從護板表面剝離。
由於從腔室的弱氣體電導,産生傳統的基材處理腔室和PVD製程的另一問題。需要高電導氣體流經路,以供應
必須的製程氣體到製程空腔並且適當地排出廢製程氣體。然而,排列腔室壁的製程套件的護板和其他腔室元件實質上減小氣體傳導流。在這些元件中放置孔同時增加經過的氣體導電率,還允許視線濺射沈積物經過氣體傳導孔退出,從而沈積在腔室壁上。該孔還可導致電漿從處理空間內泄露,以圍繞腔室區域。另外,結合該孔的腔室元件具有其他缺點,包括,但是不限於需要額外的部件、它們相對脆弱、多個部件的容忍疊層和在介面的弱導熱率。
因而,期望具有製程套件元件,其增加導熱率同時減小製程沈積物從元件表面剝離。還期望控制護板和襯墊的溫度,使得它們在電漿處理期間不在過高溫度和低溫度之間迴圈。還期望增加總氣體電導同時防止在製程區域外部的視線沈積並減小電漿泄露。
在第一方案中,本發明提供一種護板,其在一基材處理腔室中用於圍繞面對一基材支撐件的一濺射靶,該護板包含:(a)一圓柱帶,其具有一圍繞該濺射靶的頂壁和一圍繞該基材支撐件的底壁;(b)一支撐壁架,其從該圓柱帶的頂壁徑向向外延伸;(c)一傾斜階梯,其從該圓柱帶的底壁徑向向內延伸;以及(d)一U型溝道,其接合到該傾斜階梯且圍繞該基材支撐件,該U型溝道包含第一和第二腿部件,該第一腿部件具有多個氣孔以允許製程氣體通過,從而該些氣孔提供高氣體熱導。
在第二方案中,本發明提供一種在一基材處理腔室中的一沈積環周圍放置的蓋環,該沈積環位於該腔室中的一基材支撐件和一圓柱護板之間,並且該蓋環包含:(a)一環形楔,其包含:一傾斜頂表面,其圍繞該基材支撐件,該傾斜頂表面具有內部和外部週邊;一球形隆凸,其在該傾斜頂表面的外部週邊周圍;一基腳,其從該傾斜頂表面向下延伸以放置在該沈積環上;以及一凸起邊,其在該傾斜頂表面的內部週邊周圍;以及(b)內部和外部圓柱帶,其從該環形楔向下延伸,該內部帶的高度小於該外部帶的高度。
在第三方案中,本發明提供一種製程套件,放置在一基材處理腔室中的一濺射靶和一基材支撐件周圍,該製程套件包含:(a)一護板,其圍繞該濺射靶,該護板包含:(1)一圓柱帶,其圍繞該濺射靶和該基材支撐件;(2)一支撐壁架,其從該圓柱帶徑向向外延伸;(3)一傾斜階梯,其在該支撐壁架下方並且從該圓柱帶徑向向內延伸;以及(4)一U型溝道,其接合到該傾斜階梯並且圍繞該基材支撐件,該U型溝道包含第一和第二腿部件,該第一腿部件具有多個氣孔,從而使製程氣體以高氣體熱導通過其間;以及(b)一環組件,其包含:(1)一蓋環,其位在該基材支撐件周圍,該蓋環包含:一環形楔,該環形楔包含:一傾斜頂表面,其在該基材支撐件周圍,該傾斜頂表面具有內部和外部週邊;一球形隆凸,在該傾斜頂表面的外部週邊周圍;一基腳,其從該傾斜頂表面向下延伸以放置在該沈
積環上;一凸起邊,其在該傾斜頂表面的內部週邊周圍,以及內部和外部圓柱帶,其從該環形壁架向下延伸,該內部圓柱帶的高度比該外部圓柱帶的高度小;以及(2)一沈積環,其支撐該蓋環。
在第四方案中,本發明提供一種濺射腔室,其包含:(a)一濺射靶,其用於將濺射材料沈積到一基材上;(b)一蓋環,其在該基材支撐件周圍;(c)一護板,其圍繞該濺射靶和該基材支撐件;(d)一蓋環,其在該基材支撐件周圍;(e)一沈積環,其支撐該蓋環,該沈積環包含一放置在該底座的容納表面上的碟盤和一圍繞該碟盤的環形楔,該環形楔包含一從該環形楔向內延伸的圓柱帶以及一放置在該底座上的基腳;(f)一氣體分配器,以將一氣體引入到該腔室中;(g)一氣體激發器,以激發該氣體而形成電漿,藉以濺射該濺射靶;以及(h)一排氣裝置,以從該腔室排出該氣體。
在第1圖中示出了能處理基材104的適當的製程腔室100的實施例。腔室100典型地是可從California的Santa Clara的應用材料有限公司購得的CLEAN WTM腔室。然而,其他製程腔室也可結合本發明使用。腔室100包含圍護壁106,其圍繞製程區域108。壁106包括側壁116、底壁120和頂部124。腔室100可以爲多腔平臺(未示出)的一部分,其中該多腔平臺具有通過在各個腔室之間傳送
基材104的諸如機器人臂的基材傳送機構連接的互連腔室的集成。在第1圖中示出的方案中,製程腔室100爲濺射沈積腔室,還已知爲物理氣相沈積或PVD腔室,能將所沈積的材料諸如鋁、銅、鉭、鉭氮化物、鈦、鈦氮化物、鎢和鎢氮化物的其中之一或多種濺射到基材104上。
腔室100包含基材支撐件130,該支撐件包含底座134以支撐基材104。底座134具有基材容納表面138,其具有基本平行於高架濺射靶140的濺射表面139的平面。在處理期間,底座134的基材容納表面138容納並支撐基材104。底座134可包括靜電夾盤或加熱器諸如電阻加熱器或熱交換器。在操作中,基材104經過腔室100的側壁116的基材負載入口142而引入到腔室100中並且被放置到基材支撐件130上。支撐件130可通過支撐件升降摺箱(support lift bellow)被提升或降低,並且在通過機器人臂將基材104放置到基材支撐件130上期間,升降指部組件(lift finger assembly)可用於將基材104提升或降低到支撐件130上。在電漿操作期間,底座134可保持在電浮電勢或接地。
腔室100還包含製程套件200,如在第2A圖和第2B圖中所示,其包含易於從腔室100去除的各種元件,例如,以將濺射沈積物清洗離開元件表面、替換或修理被侵蝕元件,或以使腔室100適應其他製程。在一個方案中,製程套件200包含放置在基材支撐件130的週邊壁204周圍的護板201和環組件202,其在基材104的懸臂邊緣206之
前終止。環組件202包含沈積環208和蓋環212。沈積環208包含圍繞支撐件130的環形帶215。蓋環212至少部分覆蓋沈積環208。沈積環208和蓋環212彼此協作以減小濺射沈積形成於支撐件130的週邊壁204和基材104的懸臂邊緣206上。
護板201圍繞濺射靶140的濺射表面139,該濺射靶面向基材支撐件130和基材支撐件130的外部週邊。護板201覆蓋並遮蔽腔室100的側壁116,以減小源自濺射靶140的濺射表面139的濺射沈積物沈積到護板201後面的元件和表面上。例如,護板201可保護支撐件130的表面、懸臂基材104的邊緣206、腔室100的側壁116和底壁120。
如在第2A圖、第2B圖和第3A圖、第3B圖中所示,護板201具有單一的構造並包含圓柱帶214,其具有設計大小以圍繞濺射靶140的濺射表面139和基材支撐件130的直徑。圓柱帶214具有圍繞濺射靶140的濺射表面139的頂壁216。支撐壁架219從圓柱帶214的頂壁216徑向向外延伸。適配器226可包含O-環凹槽222,在其中放置O-環223以在適配器和絕緣體310之間形成真空密封,從而防止越過護板201而泄露。支撐壁架219包含停置表面224以放置在圍繞腔室100的側壁116的環形適配器226上。支撐壁架219的停置表面224包含多個槽228,該槽設計形狀和尺寸以容納銷282,從而使護板201與適配器226對齊。銷282可被壓配入適配器226中。設置多個孔229以容納將護板201耦接到適配器的緊固件230。在一個
實施方式中,緊固件230穿過護板201的孔229和適配器板226的孔220,並且穿入到固定板297的孔295中。固定板297可以爲不銹鋼環或其他適當的材料。儘管在第2B圖中僅示出了一個槽228和一個孔229,但是多個槽228和孔229圍繞護板201的圓周分佈。
適配器226支撐護板201並可用作基材處理腔室100的壁116周圍的熱交換器。可選地,適配器226可包括電阻加熱器或溫度控制流體的導管,使得如果需要適配器226可加熱或冷卻護板201。適配器226和護板201形成使熱量更好地從護板201傳送到的組件,並且該元件減小沈積於護板上的處理上的熱膨脹應力。部分護板201由於暴露於形成於基材處理腔室中的電漿而變得過熱,導致護板熱膨脹並且導致形成於護板上的濺射沈積物從護板剝離並落到基材104上並且污染基材104。適配器226具有接觸表面232,其與護板201的停置表面224接觸,從而允許護板201和適配器226之間良好的熱導率。在一個方案中,護板201的停置表面224和適配器226的接觸表面232每個都具有從大約10到大約80微英吋的表面粗糙度,或者甚至從大約16到大約63微英吋,或者在一個方案中大約32微英吋的平均表面粗糙度。在一個方案中,適配器226進一步包含用於流動熱傳送流體經過的導管,從而控制適配器226的溫度。
包含適配器226和護板201的組件還包括護板緊固系統234,用於使護板201與適配器226對齊並將護板201
緊固到適配器226。護板緊固系統232包含多個銷293,其沿著沿適配器226以圓或環形排列隔開並放置。在一個方案中,至少三個銷293在適配器226上呈圓形排列。在另一實施方式中,使用12個銷293。每個銷293包含由材料諸如鋼,例如不銹鋼構造的剛性圓柱。每個銷293在構件236的一端上具有壓配入適配器226的壓配連接器238。如在第3A圖中所示,銷293穿過槽229。護板緊固系統232進一步包含多個緊固件230。在一個實施方式中,緊固件230可以爲內六角螺釘236。螺釘236的頭240凹入孔229的錐口孔中。螺釘236的端部穿入固定板297的螺紋孔295中。在一個實施方式中,至少三個螺釘236呈圓形設置以將適配器226固定到護板201。在另一實施方式中,使用12個螺釘297。
在支撐壁架219下方爲圍繞基材支撐件130的底壁242。斜階梯244從圓柱帶214的底壁242徑向向內延伸並且圍繞基材支撐件130。在一個方案中,斜階梯244包含弧形接合點245。
U型溝道246接合到護板的斜階梯244。U型溝道246具有外部第一腿部件299,其具有多個氣體熱導孔249,從而使製程氣體以改善的氣體熱導經過。U型溝道246還具有內部第二腿部件253,其與外部第一腿部件299隔開並且其高度大於外部第一腿部件299。在一個方案中,在外部腿部件299中的氣孔249基本上爲橢圓形並由圓柱(未示出)分離。在一個方案中,每個氣孔249具有大約1到
大約2英吋的寬度和大約0.2到大約0.8英吋的高度。
護板201允許來自製程腔室100的氣體以減小的阻力經過氣孔249並且經過U型溝道246迴圈。護板201的設計進一步最小化氣體熱導對基材支撐件130位置在高度方面的敏感性。
圓柱帶214、支撐壁架219、護板201的斜階梯244和U型溝道246包含由單塊材料製成的單一結構。例如,整個護板201可由300號不銹鋼製成,或者在一個方案中,由鋁製成。單一的護板201與習知護板相比是有優勢的,其中習知護板包括多個元件(通常由兩塊或三塊分離片組成完整護板)。例如在加熱和冷卻製程中,單一片護板與多元件護板相比更加熱均勻。例如,單一片護板201僅具有與適配器226的一個熱介面,允許更好的控制護板201和適配器226之間的熱交換。具有多個元件的護板使其更難以且更加費力去除護板用於清洗。單一片護板201具有暴露於濺射沈積物的連續表面,而沒有更難以清除的介面或角落。在製程迴圈期間,單一片護板201還更加有效地將腔室壁106與濺射沈積隔離開。
在一個方案中,利用可從California的Santa Clara的應用材料有限公司購得的CLEANCOATTM
處理護板201的暴露表面。CLEANCOATTM
是雙線鋁電弧噴塗,其應用到基材處理腔室元件,諸如護板201,從而減少護板201上的沈積物的粒子脫落,並因而防止腔室100的基材104的污染。在一個方案中,在護板上的雙線鋁電弧噴塗具有從
大約600到大約2300微英吋的表面粗糙度。
護板201具有面向腔室100中的電漿區域108的暴露表面。噴砂處理暴露的表面,以具有175±75微英吋的表面粗糙度。紋理化的噴砂處理的表面用於減少粒子脫落並防止腔室100內的污染。平均表面粗糙度爲沿著暴露的表面距離粗糙特徵的峰和穀的平均線的位移的絕對值的平均值。可通過表面光度儀或通過掃描電子顯微鏡確定粗糙度平均值、偏斜或其他性能,其中表面光度儀使針經過暴露表面上方並且産生表面上粗糙面高度的波動的痕迹,該掃描電子顯微鏡使用從表面反射的電子束以産生表面圖像。
沈積環208包含環形帶215,其在支撐件130的週邊壁204周圍延伸並圍繞該支撐件130的週邊壁204,如第2A圖中所示。環形帶215包含內部唇250,其從帶215橫向延伸並且基本上平行於支撐件130的週邊壁204。內部唇250在基材104的懸臂邊緣206下方立即終止。內部唇250限定沈積環208的內部周界,其中該沈積環208圍繞基材104和基材支撐件130的週邊以在處理期間保護不被基材104覆蓋的支撐件130的區域。例如,內部唇250圍繞並至少部分覆蓋支撐件130的週邊壁204,其否則暴露於處理環境,從而減小或甚至全部排除濺射沈積物在週邊壁204上的沈積。有利地,沈積環208可易於被去除以從環208的暴露表面清洗濺射沈積物,使得支撐件130不必爲了清洗而被拆開。沈積環208還可用於包含支撐件130的暴露側表面,以減小他們被受激電漿物質的侵蝕。
在第2A圖中示出的方案中,沈積環208的環形帶215具有半環形隆凸252,其沿著帶215的中心部分延伸,該帶215在半環形隆凸252每一側上具有徑向向內的斜面(dip)254a、b。徑向向內的斜面254與覆蓋環212隔開以在其之間形成弧形間隙256,其作爲曲徑(labyrinth)以減小電漿物質滲透到弧形間隙256中。開口內部溝道258位於內部唇250和半環形隆凸252之間。開口內部溝道258徑向向內延伸,以至少部分在基材104的懸臂邊緣206下方終止。開口內部溝道258有助於在沈積環208清洗期間從這些部分去除濺射沈積物。沈積環208還具有壁架260,其向外延伸並徑向向半環形隆凸252的外部放置。壁架260用於支撐蓋環212。
沈積環208可通過成形並加工陶瓷材料諸如氧化鋁而製成。較佳地,氧化鋁具有大約99.5%的純度以減少不期望的元素諸如鐵對腔室100的污染。陶瓷材料使用傳統的技術諸如等靜壓成型進行模制並燒結,之後使用適當的加工方法進行模式燒結預成型的加工以實現所需的形狀和尺寸。
沈積環208的環形帶215可包含噴砂處理的暴露表面。利用適當的粗砂尺寸執行噴砂處理,以實現預定的表面粗糙度。在一個方案中,利用雙線鋁電弧噴塗,諸如CLEANCOATTM
處理沈積環208的表面,從而減小顆粒脫落和污染。
蓋環212圍繞並至少部分覆蓋沈積環208,以容納沈
積環208並從而遮蔽沈積環208使其與濺射沈積物的塊體隔開。蓋環212由耐濺射電漿的侵蝕的材料製成,例如,諸如不銹鋼、鈦或鋁的金屬材料或諸如氧化鋁的陶瓷材料。在一個方案中,蓋環212由具有至少大約99.9%純度的鈦組成。在一個方案中,利用利用雙線鋁電弧噴塗,諸如CLEANCOATTM
處理蓋環212的表面,從而減少顆粒從蓋環212的表面脫落。
蓋環212包含環形楔262,該楔包含傾斜的頂表面264,其徑向向內傾斜並圍繞基材支撐件130。環形楔262的傾斜頂表面264具有內部和外部週邊266、268。內部週邊266包含覆蓋徑向向內斜面254a的凸起邊270,該斜面254a包含沈積環208的開口內部溝道258。凸起邊270相對於由沈積環208形成的弧形間隙256的至少大約一半寬度凸起一距離。凸起邊270設計尺寸、形狀並放置成與弧形間隙256協作且互補,以在蓋環212和沈積環208之間形成迴旋且壓縮的流通道,其抑制製程沈積物流到週邊壁架204上。窄間隙256的壓縮流通道限制低能量濺射沈積物在沈積環208和蓋環212的接合面上的積累,其否則將使它們彼此粘結或使它們粘結到基材104的週邊懸臂邊緣206上。結合與蓋環212的凸起邊270隔開以採集例如在鋁濺射腔室中1540μm鋁濺射沈積物的最小量,同時減少或甚至基本上排除兩個環208、212接合面上的濺射沈積,從設計及在沈積懸臂邊緣206下方延伸的沈積環208的開口內部溝道258。
傾斜頂表面264的外部週邊268周圍爲球形隆凸。在一個方案中,球形隆凸272包含橢圓環形表面274,其利用護板201形成弧形間隙。傾斜頂表面264,與球形隆凸272和凸起邊270協作,阻擋視距沈積退出製程空腔108並進入腔室主體空腔。傾斜頂表面264可以從至少大約15度的角度傾斜。設計蓋環212的傾斜頂表面264的角度,例如,以最小化最接近基材104的懸臂邊緣206的濺射沈積物的積累,其否則將不利地影響在整個基材104上獲得的沈積均勻性。
蓋環212包含從環形楔262的傾斜頂表面264向下延伸的基腳(footing)276,以放置在沈積環208的壁架260上。基腳276從楔262向下延伸以壓向沈積環208,而基本上不會破碎或破裂環208。
蓋環212進一步包含從環形楔262向下延伸的內部和外部圓柱帶278a、b,在這兩個帶之間具有間隙。在一個方案中,內部和外部圓柱帶278a、b基本上垂直。圓柱帶272a、b放置在楔262的基腳276徑向向外處。內部圓柱帶278a具有小於外部圓柱帶278b的高度。典型地,外部帶278b的高度至少爲內部帶278a高度的1.2倍。例如,對於具有大約154mm的內部半徑的蓋環212,外部帶278b的高度是從大約15至大約35mm,例如25mm;並且內部帶278a的高度爲從大約12到大約24mm,例如大約19mm。
蓋環212是可調整的並且有效地遮罩在不同高度範圍的熱導孔249。例如,蓋環212能提升和降低,以關於腔
室中基材支撐件130而調整蓋環212的高度。
在護板201和蓋環212之間的空間或間隙形成迴旋的S型通道或,用於電漿傳輸。通道的形狀是有利的,例如,原因在於其阻礙並阻止電漿物質進入到該區域中,減少濺射材料的不期望沈積。
如在第4圖和第5圖中所示,濺射靶140包含安裝到背板284的濺射板280。濺射板280包含待被濺射到基材104上的材料。濺射板280可具有中心圓柱臺面286,其具有形成平行於基材104表面的面的濺射表面139。環形傾斜邊288圍繞圓柱臺面286。環形邊288可相對於圓柱臺面286傾斜至少大約8度的角度,例如從大約10度到大約20度。具有臺階292的週邊傾斜側壁290圍繞環形邊288。週邊側壁290可相對於圓柱臺面286的面傾斜至少大約60度的角度,例如,從大約75度到大約85度。臺階292可在凸起294和凹槽296之間産生,並且臺階292從大約30度到大約40度的縮減(cutback)角度連接表面。
與腔室中100的護板201的頂壁216鄰近的環形傾斜邊288和側壁290的複雜形狀,形成迴旋間隙300,其包含暗區;該區域高度耗盡自由電子並且其類比爲真空。重要地是控制暗區,以防止電漿進入、電弧放電和不穩定性。間隙300的形狀用作曲徑,其阻止被濺射的電漿物質經過間隙300,並從而減少被濺射沈積物積累在週邊靶區域的表面上。在一個方案中,暗區的週邊邊界可利用例如CLEANCOATTM
進行雙線鋁電弧噴塗處理,從而減少顆粒
在該區域中脫落。
濺射板280包含金屬或金屬合成物。例如,濺射板280可以爲金屬,諸如例如鋁、銅、鎢、鈦、鈷、鎳或鉭。濺射板280還可以爲金屬合成物,諸如例如鉭氮化物、鎢氮化物或鈦氮化物。
背板284,其具有支撐表面303以支撐濺射板280和延伸超過濺射板280的半徑的週邊壁架304。背板284由金屬製成,諸如例如不銹鋼、鋁、銅-鉻或銅-鋅。背板284可以由具有足夠高的熱導率的材料製成,以耗散在靶140上産生的熱量,其形成於濺射板280和背板284上。該熱由在這些板280、284中産生的電流産生,並還由來自電漿的高能離子轟擊到靶140的濺射表面139而産生。較高導熱率的背板284使在靶140中産生的熱量耗散到周圍結構或甚至耗散到熱交換器,該熱交換器安裝在背板284後面或者在背板284自身中。例如,背板284可包含溝道(未示出)以迴圈在其中流動的熱傳送流體。已經確定背板284的適當高熱導率爲至少大約200W/mK,例如從大約220到大約400W/mK。通過更有效地耗散在靶140中産生的熱,該熱導率級別允許靶140被操作較長的製程時間週期。
結合由具有高熱導率和低電阻率的材料製成的背板284,或者分離地或自身,背板284可包含具有一個或多個凹槽(未示出)的背側表面。例如,背板284可具有凹槽,諸如環形凹槽或凸脊(ridge),用於冷卻靶140的背側141。凹槽和凸脊還可具有其他圖案,例如,矩形柵格圖案、
雞爪圖案或在背側表面上橫穿的簡單直線。
濺射板280利用擴散連接可安裝在背板284上,通過將兩個板280、284放置在彼此之上並將板280、284加熱至適當的溫度,典型地至少大約200攝氏度。可選地,濺射靶140可以爲包含單片材料的單一結構,其具有足夠的深度以用作濺射板和背板。
背板284的週邊壁架304包含放置在腔室100中的絕緣體310上的基腳308(第2A-B圖和第3圖)。週邊壁架304包含O-環凹槽312,在其中放置O-環314以形成真空密封。絕緣體310與腔室100電隔離並且將背板284與腔室100隔開,並且通常爲由介電質或絕緣材料諸如氧化鋁形成的環。週邊壁架304設計形狀以抑制被濺射材料和電漿物質經過靶140和絕緣體310之間的間隙進行流動或遷移,從而阻止低角度被濺射沈積物滲透到間隙中。
靶140的週邊壁架304利用保護塗層例如雙線電弧噴塗鋁塗層進行塗敷。在塗敷之前,週邊壁架304被脫脂並利用碳化矽盤進行研磨,從而實現200到300微英吋的粗糙度。塗層延伸以覆蓋濺射板280的週邊側壁290和背板284的週邊壁架304。該塗層的最終表面粗糙度爲從大約500到大約900微英吋,以及具有從大約5到大約10密爾(mil)的厚度。塗層保護靶140的邊緣,並提供被濺射材料的更好粘結,並且減少材料從這些表面剝離。
濺射靶140連接到靶電源320,其施加相對於護板201的偏置電壓到靶140,其中護板201在濺射製程期間電浮
動。雖然靶電源320供應功率到靶140、護板201、支撐件130和連接到靶電源320的其他腔室元件,但是氣體激發器324激勵濺射氣體以形成濺射氣體的電漿。氣體激發器324可包含通過施加經過線圈326的電流被激勵的源線圈326。所形成的電漿積極地撞擊並轟擊靶140的濺射表面139,以從表面139濺射出材料到基材104上。
腔室100可包含磁場産生器330以成形圍繞靶140的磁場,從而改善靶140的濺射。電容性産生的電漿可通過磁場産生器330增強,其中例如,永磁或電磁線圈可提供具有旋轉磁場的腔室100中的磁場,該旋轉磁場具有平行於基材104的面旋轉的軸。腔室100可,另外或可選地,包含磁場産生器330,其在腔室100的靶140附近産生磁場,以增加靶140附近的高密度電漿區域中的離子密度,從而改善靶140材料的濺射。改善的磁場産生器330可用於使銅持續自濺射或使鋁、鈦或其他金屬濺射;雖然最小化了靶轟擊對非活性氣體的需求,例如,如在授權給Fu且題目爲"Rotating Sputter Magnetron Assembly"美國專利案號US6,183,614以及授權給Goparlraja等人且題目爲"Integrated Process for Copper Via Filling"的美國專利案號US6,274,008中進行了描述。磁場延伸經過基本上非磁性靶140並進入到腔室100中。
濺射氣體通過氣體傳輸系統332而引入到腔室100中,其中氣體傳輸系統332經由具有氣流控制閥338諸如質量流量控制器的導管336而提供來自氣體供應334的氣
體,以傳送設定流速的氣體經過。氣體被輸送到混合歧管(未示出),在該歧管中氣體被混合以形成期望的製程氣體合成物並被供應到具有氣體入口的氣體分配器340,以將氣體引入到腔室100中。製程氣體可包含非活性氣體,諸如氬或氙,其能積極撞擊靶140並從靶140濺射出材料。製程氣體還可包含活性氣體,諸如含氧氣體和含氮氣體的一種或多種,其能與濺射材料反應,從而在基材104上形成層。然後,氣體通過氣體激發器324被激勵以形成電漿,從而對濺射靶140進行濺射。廢製程氣體和副産物從腔室100通過排氣裝置342被排出。排氣裝置342包含排氣口344,該排氣口接收廢製程氣體並傳送廢氣到具有用於控制腔室100中氣體壓力的節流閥的排氣導管346。排氣導管346連接到一個或多個排氣泵348。典型地,腔室100中濺射氣體的壓力被設定至低於大氣壓級別,諸如真空環境,例如,1毫托至400毫托的氣壓。
腔室100可通過包含程式碼的控制器350進行控制,該程式碼具有指令集以操作腔室100的元件,從而處理基材104。例如,控制器350可包含包括基材定位指令集的程式碼,以操作基材支撐件130和基材傳送機構;用於操作氣流控制閥的氣流控制指令集,以設定到腔室100的濺射氣體流速;用於操作排氣節流閥的氣壓控制指令集,以保持腔室100中的壓力;用於操作氣體激發器324的氣體激發器控制指令集,以設定氣體激發功率級別;穩定控制指令集,以控制支撐件130或壁106中的溫度控制系統,
以設定腔室100中各種元件的溫度;以及製程監控指令集,以監控腔室100中的製程。
參照第4圖描述濺射腔室400的另一方案。該腔室400可以爲,例如,但是不限於,可從California的Santa Clara的應用材料有限公司購得的VERSA TTNTM
腔室。腔室400具有濺射靶140,用於將被濺射的材料沈積到基材104上。濺射靶140與面對濺射靶140的底座406相對而放置。基材支撐件404可由諸如例如不銹鋼的材料構造。電阻加熱器409可嵌入到底座406內,並用於加熱底座406上的基材104。濺射靶140和基材支撐件404由護板201圍繞。蓋環212放置在基材支撐件404周圍,並且由沈積環208支撐。沈積環208包含放置在底座406的容納表面上的碟盤410。碟盤410的直徑小於底座406的容納表面408的直徑。沈積環208進一步包含圍繞碟盤410的環形楔412。圓柱帶414水平並從環形楔412向內延伸。環形楔412具有放置在基材支撐件404的底座406上的基腳416。腔室400還具有氣體分配器418、氣體激發器420和排氣裝置422。
以上描述的製程套件200顯著地增加了製程迴圈的數量和腔室100中的處理時間,增加了清洗之間的時間量。這通過減小形成於基材104周圍的元件上的濺射沈積物量來完成,其難以清洗。設計製程套件200的元件,以允許濺射區域108中高功率和壓力,從而通過降低迴旋間隙300的暗區中的溫度而産生更高的沈積産量。這還利用適配器
226改善了護板201的熱均勻性。另外,與退出製程套件相比,製程套件200設計成允許在套件被改變以及維修週期執行之前,至少大約2至大約5倍的更多沈積物沈積在其上。這在腔室100的正常運行時間方面是顯著的改善並且還增加了製程産量。
參照本發明的特定較佳方案描述了本發明,然而,其他方案也是可能的。例如,可在其他類型的應用中使用本發明的製程套件200或元件和適配器226,這對於本領域的普通技術人員是顯而易見的,例如應用於蝕刻、CVD和蝕刻腔室中。因此,附屬的申請專利範圍的精神和範圍不應該限於在此包含的較佳方案的描述。
100‧‧‧腔室
104‧‧‧基材
106‧‧‧壁
108‧‧‧製程區域
116‧‧‧側壁
118‧‧‧底壁
124‧‧‧頂部
130‧‧‧基材支撐件
134‧‧‧底座
138‧‧‧容納表面
139‧‧‧濺射表面
140‧‧‧靶
141‧‧‧背側
142‧‧‧入口
200‧‧‧製程套件
201‧‧‧護板
202‧‧‧環元件
204‧‧‧壁
206‧‧‧邊緣
208‧‧‧沈積環
212‧‧‧蓋環
214‧‧‧圓柱帶
215‧‧‧環形帶
216‧‧‧頂壁
220‧‧‧孔
222‧‧‧凹槽
223‧‧‧O-環
224‧‧‧停置表面
226‧‧‧適配器
228‧‧‧槽
229‧‧‧孔
230‧‧‧緊固件
232‧‧‧接觸表面
234‧‧‧護板緊固系統
236‧‧‧螺釘
238‧‧‧壓配連接器
240‧‧‧頭
242‧‧‧底壁
244‧‧‧斜階梯
245‧‧‧弧形接合點
246‧‧‧U型溝道
249‧‧‧孔
250‧‧‧內部唇
252‧‧‧隆凸
253‧‧‧內部第二腿部件
254A‧‧‧斜面(dip)
254B‧‧‧斜面(dip)
256‧‧‧間隙
258‧‧‧開口內部溝道
260‧‧‧壁架
262‧‧‧楔
264‧‧‧頂表面
266‧‧‧內部週邊
268‧‧‧外部週邊
270‧‧‧凸起邊
272‧‧‧隆凸
274‧‧‧環形表面
276‧‧‧基腳
278A‧‧‧內部圓柱帶
278B‧‧‧外部圓柱帶
280‧‧‧濺射板
282‧‧‧銷
284‧‧‧背板
286‧‧‧圓柱臺面
288‧‧‧環形邊
290‧‧‧側壁
292‧‧‧臺階
293‧‧‧銷
294‧‧‧臺階
295‧‧‧孔
296‧‧‧凹槽
297‧‧‧固定板
299‧‧‧外部第一腿部件
300‧‧‧間隙
303‧‧‧支撐表面
304‧‧‧壁架
308‧‧‧基腳
310‧‧‧絕緣體
312‧‧‧凹槽
314‧‧‧O-環
320‧‧‧電源
324‧‧‧氣體激發器
326‧‧‧源線圈
330‧‧‧磁場産生器
332‧‧‧氣體傳輸系統
334‧‧‧氣體供應
336‧‧‧導管
338‧‧‧閥
340‧‧‧氣體分配器
342‧‧‧排氣裝置
344‧‧‧排氣口
346‧‧‧排氣導管
348‧‧‧排氣泵
350‧‧‧控制器
400‧‧‧腔室
404‧‧‧基材支撐件
406‧‧‧底座
408‧‧‧容納表面
409‧‧‧加熱器
410‧‧‧碟盤
412‧‧‧楔
414‧‧‧帶
416‧‧‧基腳
418‧‧‧氣體分配器
420‧‧‧氣體激發器
422‧‧‧排氣裝置
參照以下描述、附屬的申請專利範圍和示出本發明的實施例的附圖,本發明的這些特徵、方案和優點將更加易於理解。然而,應該理解一般地每個特徵都可用於本發明中,不僅僅在特定附圖的文本中,並且本發明包括這些特徵的任意組合,其中:第1圖是基材處理腔室的實施方式的示意性橫截面視圖,其示出製程套件元件和濺射靶;第2A圖是在基材處理腔室內具有護板和環組件的製程套件的透視圖;第2B圖是護板的簡要頂視圖;第3A-B圖是連接到適配器的護板的上部分的橫截面
視圖;以及第4圖是基材處理腔室的另一方案的示意性橫截面視圖,其示出了護板和環組件。
139‧‧‧濺射表面
140‧‧‧靶
200‧‧‧製程套件
201‧‧‧護板
206‧‧‧邊緣
208‧‧‧沈積環
212‧‧‧蓋環
214‧‧‧圓柱帶
215‧‧‧環形帶
216‧‧‧頂壁
226‧‧‧適配器
230‧‧‧緊固件
242‧‧‧底壁
244‧‧‧斜階梯
245‧‧‧弧形接合點
246‧‧‧U型溝道
249‧‧‧孔
250‧‧‧內部唇
254A‧‧‧斜面(dip)
254B‧‧‧斜面(dip)
256‧‧‧間隙
258‧‧‧開口內部溝道
260‧‧‧壁架
262‧‧‧楔
264‧‧‧頂表面
266‧‧‧內部週邊
268‧‧‧外部週邊
270‧‧‧凸起邊
272‧‧‧隆凸
274‧‧‧環形表面
276‧‧‧基腳
278A‧‧‧內部圓柱帶
278B‧‧‧外部圓柱帶
280‧‧‧濺射板
284‧‧‧背板
286‧‧‧圓柱臺面
288‧‧‧環形邊
294‧‧‧臺階
296‧‧‧凹槽
297‧‧‧固定板
299‧‧‧外部第一腿部件
300‧‧‧間隙
303‧‧‧支撐表面
304‧‧‧壁架
308‧‧‧基腳
310‧‧‧絕緣體
312‧‧‧凹槽
314‧‧‧O-環
Claims (25)
- 一種護板,其在一基材處理腔室中用於圍繞面對一基材支撐件的一濺射靶,該護板包含:(a)一圓柱帶,其具有一圍繞該濺射靶的頂壁和一圍繞該基材支撐件的底壁;(b)一支撐壁架,其從該圓柱帶的頂壁徑向向外延伸;(c)一傾斜階梯,其從該圓柱帶的底壁徑向向內延伸;以及(d)一U型溝道,其接合到該傾斜階梯且圍繞該基材支撐件,該U型溝道包含第一和第二腿部件,該第一腿部件具有多個氣孔以允許製程氣體通過,從而該些氣孔提供高氣體熱導。
- 如申請專利範圍第1項所述的護板,其中在該第一腿部件中的該些氣孔基本呈橢圓形。
- 如申請專利範圍第2項所述的護板,其中該些氣孔具有從大約2.54到大約5.08cm的寬度,以及從大約0.51到大約2.03cm的高度。
- 如申請專利範圍第1項所述的護板,其中該傾斜的階梯包含一弧形接合點。
- 如申請專利範圍第1項所述的護板,其中該U型 溝道的該第一腿部件的高度大於該第二腿部件的高度。
- 如申請專利範圍第1項所述的護板,其中包含由鋁組成的一整體結構。
- 如申請專利範圍第6項所述的護板,其中包含在該護板表面上的一雙線鋁電弧噴塗塗層。
- 如申請專利範圍第7項所述的護板,其中該雙線鋁電弧噴塗塗層包含從大約600到大約2300微英吋的表面粗糙度。
- 如申請專利範圍第1項所述的護板,其中該支撐壁架包含一停置表面和穿過該停置表面的多個槽。
- 一種組件,其包含適配器和如申請專利範圍第9項所述的護板,其中該適配器包含一與該護板的支撐壁架的停置表面接觸的接觸表面,以支撐該護板並提供該適配器與該護板之間的良好熱傳導。
- 如申請專利範圍第10項所述的組件,其中進一步包含一用於將該護板與該適配器對齊的對準銷系統,該對準銷系統包含在該適配器上的圓形排列中隔開的多個銷,每個銷包含一剛性構件,該剛性構件具有一壓配入該適配 器中的壓配連接器和一嚙合到該護板的支撐壁架上的多個槽的其中之一中的頭。
- 如申請專利範圍第10項所述的組件,其中該護板的停置表面和該適配器的接觸表面每個都具有從大約600到大約2300微英吋的表面粗糙度。
- 如申請專利範圍第10項所述的組件,其中包含用於流動一熱傳送流體的導管。
- 一種在一基材處理腔室中的一沈積環周圍放置的蓋環,該沈積環位於該腔室中的一基材支撐件和一圓柱護板之間,並且該蓋環包含:(a)一環形楔,其包含:一傾斜頂表面,其圍繞該基材支撐件,該傾斜頂表面具有內部和外部週邊;一球形隆凸,其在該傾斜頂表面的外部週邊周圍;一基腳,其從該傾斜頂表面向下延伸以放置在該沈積環上;以及一凸起邊,其在該傾斜頂表面的內部週邊周圍;以及(b)內部和外部圓柱帶,其從該環形楔向下延伸,該內部帶的高度小於該外部帶的高度。
- 如申請專利範圍第14項所述的蓋環,其中該環形楔的該傾斜頂表面係徑向向內傾斜。
- 如申請專利範圍第15項所述的蓋環,其中該傾斜頂表面以至少大約15度的角度傾斜。
- 如申請專利範圍第14項所述的蓋環,其中該球形隆凸包含一橢圓圓周表面,該橢圓圓周表面利用該圓柱護板形成一間隙。
- 如申請專利範圍第14項所述的蓋環,其中該蓋環能被提升和降低,以相關於該基材處理腔室中的該基材支撐件而調整該蓋環的高度。
- 如申請專利範圍第14項所述的蓋環,其中該蓋環包含鈦。
- 如申請專利範圍第19項所述的蓋環,其中該鈦包含至少大約99.9%的純度。
- 如申請專利範圍第14項所述的蓋環,其中該內部和外部圓柱帶係基本垂直。
- 如申請專利範圍第14項所述的蓋環,其中包含具有一雙線鋁電弧噴塗塗層的一暴露表面。
- 一種製程套件,放置在一基材處理腔室中的一濺 射靶和一基材支撐件周圍,該製程套件包含:(a)一護板,其圍繞該濺射靶,該護板包含:(1)一圓柱帶,其圍繞該濺射靶和該基材支撐件;(2)一支撐壁架,其從該圓柱帶徑向向外延伸;(3)一傾斜階梯,其在該支撐壁架下方並且從該圓柱帶徑向向內延伸;以及(4)一U型溝道,其接合到該傾斜階梯並且圍繞該基材支撐件,該U型溝道包含第一和第二腿部件,該第一腿部件具有多個氣孔,從而使製程氣體以高氣體熱導通過其間;以及(b)一環組件,其包含:(1)一蓋環,其位在該基材支撐件周圍,該蓋環包含:一環形楔,該環形楔包含:一傾斜頂表面,其在該基材支撐件周圍,該傾斜頂表面具有內部和外部週邊;一球形隆凸,在該傾斜頂表面的外部週邊周圍;一基腳,其從該傾斜頂表面向下延伸以放置在該沈積環上;一凸起邊,其在該傾斜頂表面的內部週邊周圍,以及內部和外部圓柱帶,其從該環形壁架向下延伸,該內部圓柱帶的高度比該外部圓柱帶的高度小;以及(2)一沈積環,其支撐該蓋環。
- 如申請專利範圍第23項所述的製程套件,其中該 護板、該蓋環和該沈積環的每一個都包含具有一雙線鋁電弧噴塗塗層的一暴露表面。
- 一種濺射腔室,其包含:(a)一濺射靶,其用於將濺射材料沈積到一基材上;(b)一蓋環,其在該基材支撐件周圍;(c)一護板,其圍繞該濺射靶和該基材支撐件;(d)一蓋環,其在該基材支撐件周圍;(e)一沈積環,其支撐該蓋環,該沈積環包含一放置在該底座的容納表面上的碟盤和一圍繞該碟盤的環形楔,該環形楔包含一從該環形楔向內延伸的圓柱帶以及一放置在該底座上的基腳;(f)一氣體分配器,以將一氣體引入到該腔室中;(g)一氣體激發器,以激發該氣體而形成電漿,藉以濺射該濺射靶;以及(h)一排氣裝置,以從該腔室排出該氣體。
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TW575515B (en) * | 2000-08-14 | 2004-02-11 | Anelva Corp | Substrate processing apparatus |
WO2003069013A2 (en) * | 2002-02-14 | 2003-08-21 | Trikon Technologies Limited | Plasma processing apparatus |
US20060110620A1 (en) * | 2004-11-24 | 2006-05-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
Also Published As
Publication number | Publication date |
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EP1953798A2 (en) | 2008-08-06 |
TW200845092A (en) | 2008-11-16 |
US20080178801A1 (en) | 2008-07-31 |
CN101235482A (zh) | 2008-08-06 |
SG144872A1 (en) | 2008-08-28 |
EP1953798A3 (en) | 2010-07-21 |
JP5563197B2 (ja) | 2014-07-30 |
US7981262B2 (en) | 2011-07-19 |
JP2014196563A (ja) | 2014-10-16 |
CN101787519B (zh) | 2012-11-14 |
KR20080071090A (ko) | 2008-08-01 |
JP5849124B2 (ja) | 2016-01-27 |
KR100945608B1 (ko) | 2010-03-04 |
CN101787519A (zh) | 2010-07-28 |
JP2008261047A (ja) | 2008-10-30 |
CN101235482B (zh) | 2010-09-29 |
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