TWI411700B - 具能量輸入之化學氣相沈積 - Google Patents
具能量輸入之化學氣相沈積 Download PDFInfo
- Publication number
- TWI411700B TWI411700B TW098133650A TW98133650A TWI411700B TW I411700 B TWI411700 B TW I411700B TW 098133650 A TW098133650 A TW 098133650A TW 98133650 A TW98133650 A TW 98133650A TW I411700 B TWI411700 B TW I411700B
- Authority
- TW
- Taiwan
- Prior art keywords
- energy
- substrate
- axis
- gaseous reactants
- rotation
- Prior art date
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 239000000376 reactant Substances 0.000 claims abstract description 81
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 115
- 150000004678 hydrides Chemical class 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000011144 upstream manufacturing Methods 0.000 claims description 16
- 230000033001 locomotion Effects 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005984 hydrogenation reaction Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 15
- 235000012431 wafers Nutrition 0.000 description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 36
- 229910021529 ammonia Inorganic materials 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 238000013022 venting Methods 0.000 description 14
- 239000012190 activator Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000000354 decomposition reaction Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- -1 aluminum alkyl compounds Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
Description
本發明大體上係關於化學氣相沈積方法及裝置。
本申請案主張2008年10月3日申請之美國臨時專利申請案第61/195,093號之申請日期之權利,該案以全文引用的方式併入本文中。
化學氣相沈積涉及將一或多種含有化學物質之氣體引導至基板表面上使得反應性物質反應且在表面上形成沈積。舉例而言,可藉由基板上半導體材料之磊晶生長形成化合物半導體。基板通常為盤狀結晶材料,通常稱為「晶圓」。通常藉由使用金屬有機化學氣相沈積或「MOCVD」在晶圓上生長化合物半導體層來形成諸如III-V半導體之化合物半導體。在此製程中,藉由氣體組合提供化學物質,包括一或多種金屬有機化合物(諸如第III族金屬鎵、銦及鋁之烷基化合物)且亦包括第V族元素之來源(諸如一或多種第V族元素之一或多種氫化物,諸如NH3
、AsH3
、PH3
及銻之氫化物)。此等氣體在晶圓(諸如藍寶石晶圓)表面上彼此反應以形成通式InX
GaY
AlZ
NA
AsB
PC
SbD
之III-V化合物,其中X+Y+Z約等於1且A+B+C+D約等於1,且X、Y、Z、A、B、C及D各自可在0與1之間。在一些情況下,可使用鉍置換一些或所有其他第III族金屬。
此過程中,晶圓在反應室內保持在高溫下。將反應性氣體(通常與惰性載氣混雜)引入反應室中。通常,當氣體被引入反應室中時其處於相對低溫下,例如,約50℃或更低。當氣體到達熱晶圓時,其溫度上升且因此其用於反應之可用能量增加。
本發明中所使用之術語「可用能量」係指用於化學反應之反應物質之化學勢。化學勢為熱力學、物理學及化學中常用於描述系統能量(粒子、分子、振動或電子能態、反應平衡等)之術語。然而,在各種學科中可使用術語化學勢之更特定替代,包括吉布斯自由能(free energy)(熱力學)及費米能階(Fermi level)(固態物理學)等。除非另作說明,否則提及可用能量應理解為係指指定材料之化學勢。
根據美國專利公開案第2007/0256635號,揭示CVD反應器,其中氨源由反應器內之UV光活化。在本申請案所展示之下向流反應器中,UV源在氨進入反應器中時活化氨。此等申請者亦指示可藉此在其真空反應器中達成較低溫度反應。
如美國專利公開案第2006/0156983號及其他此類揭示案所示,已知在各種類型電漿反應器中可對其中之電極施加高頻功率以電離至少一部分反應性氣體以產生至少一種反應性物質。
亦已知可利用雷射輔助化學氣相沈積製程。舉例而言,在Lee等人之「Single-phase Deposition of a α-Gallium Nitride by a Laser-induced Transport Process」,J. Mater. Chem.,1993,3(4),347-351中,雷射輻射與基板表面平行發生使得可藉此激發各種氣體分子。此等氣體可包括諸如氨之化合物。在Tansley等人之「Argon Fluoride Laser Activated Deposition of Nitride Films」,Thin Solid Films,163(1988)255-259中,再次使用高能光子以在基板表面附近解離來自合適蒸汽源之離子。類似地,在Bhutyan等人之「Laser-Assisted Metalorganic Vapor-Phase Epitaxy(LMOVPE)of Indium Nitride(InN)」,phys. stat.sol.(a)194,第2號,501-505(2002)中,據稱氨分解在最佳生長溫度下增強以改良MOVPE生長InN膜之電性質。使用ArF雷射以達成使氨以及有機前驅體(諸如三甲基銦及其類似物)光解離之此目的。
因此繼續搜尋改良之CVD反應方法,其中可以較大百分比更有效地利用諸如氨之反應物且可在與當前使用之相同反應器條件下產生改良之膜。
根據本發明,此等及其他目標現已藉由發現在基板上沈積化合物半導體之方法實現,該方法包含以下步驟:(a)將基板保持在反應室中;(b)在反應室內將複數種氣體反應物自進氣口以下游方向引向基板表面,該複數種氣體反應物適於在基板表面上彼此反應以在基板上形成沈積;(c)選擇性供應能量至進氣口下游及基板上游之複數種氣體反應物中之一者以賦予足以活化該複數種氣體反應物中之一者但不足以分解該複數種氣體反應物中之一者的能量;及(d)在基板表面上分解該複數種氣體反應物。選擇性供應之能量較佳係選自由微波能量及紅外線能量組成之群。
根據本發明方法之一實施例,以複數種氣體反應物中之一者之共振頻率供應選擇性供應之能量。
根據本發明方法之另一實施例,該方法包括將複數種氣體反應物中之一者引導至基板之預選區且同時僅選擇性供應能量至該基板之預選區。
根據本發明方法之另一實施例,引導複數種氣體反應物之步驟包括將反應物引向基板使得在進氣口與基板表面之間的至少一部分流動區中複數種氣體反應物保持實質上彼此分離,且將基板保持在反應室中包括保持基板運動。保持基板運動步驟較佳包括在反應室中使基板圍繞旋轉軸旋轉使得複數種氣體反應物碰撞與旋轉軸平行之基板表面。在較佳實施例中,引導複數種氣體反應物之步驟包括將反應物引入反應室之分離區且選擇性供應能量步驟包括僅供應能量至供應複數種氣體反應物中之一者之彼等區域且不供應能量至供應其餘複數種氣體反應物之彼等區域。
根據本發明方法之一實施例,選擇性施加之能量以相對於旋轉軸成0°與90°之間的角度施加於複數種反應物中之一者。在一實施例中,角度為相對於旋轉軸成約0°。在另一實施例中,角度為相對於旋轉軸成約90°。在其他實施例中,角度可為相對於旋轉軸成0°與90°之間。
根據本發明,亦發現在基板上沈積化合物半導體之方法,該方法包含以下步驟:(a)將基板保持在反應室中;(b)在反應室內將包括第V族氫化物及第III族金屬之有機化合物之複數種氣體反應物自進氣口以下游方向引向基板表面;(c)選擇性供應能量至進氣口下游及基板上游之第V族氫化物以賦予足以活化第V族氫化物但不足以分解第V族氫化物之能量;且(d)在基板表面分解複數種氣體反應物。在較佳實施例中,選擇性供應之能量係選自由微波能量及紅外線能量組成之群。
根據本發明方法之一實施例,以第V族氫化物之共振頻率供應選擇性供應之能量。第V族氫化物較佳包含氨。在較佳實施例中,該等方法包括將第V族氫化物引導至基板之預選區且同時僅選擇性供應能量至該基板之預選區。在較佳實施例中,第III族金屬為鎵、銦或鋁。引導複數種氣體反應物步驟較佳包括將反應物引向基板使得在進氣口與基板表面之間的至少一部分流動區中複數種氣體反應物保持實質上彼此分離且將基板保持在反應室中包括保持基板運動。保持基板運動步驟較佳包括在反應室中使基板圍繞旋轉軸旋轉使得複數種氣體反應物碰撞與旋轉軸成橫向之基板表面。
根據本發明方法之一實施例,選擇性施加之能量以相對於旋轉軸成0°與90°之間的角度施加於第V族氫化物。在一實施例中,角度為相對於旋轉軸成約0°。在另一實施例中,角度為相對於旋轉軸成約90°。在其他實施例中,角度可為相對於旋轉軸成0°與90°之間的角度。在一較佳實施例中,引導氣體反應物步驟包括將反應物引入反應室之分離區,且選擇性供應能量步驟包括僅供應能量至供應第V族氫化物之彼等分離區,且不供應能量至供應第III族金屬之有機化合物之彼等區域。在一較佳實施例中,第III族金屬包含銦。
根據本發明,發明化學氣相沈積反應器,其包含:(a)反應室;(b)安裝於反應室內,圍繞沿上游及下游方向延伸之旋轉軸旋轉的基板載體,基板載體經配置以固持一或多個基板使得該一或多個基板之表面大體上面向上游方向;(c)安置於基板載體上游之氣流進入元件,該氣流進入元件具有安置於與旋轉軸成橫向之方向上不同位置的複數個放氣區,該氣流進入元件經配置以釋放不同氣體穿過複數個放氣區中之不同者,使得將所釋放氣體相對於旋轉軸在不同位置以實質上分離之氣流以大體上下游方向引向基板載體及(d)選擇性能量輸入裝置,其經配置以在氣流入口與基板載體之間對準實質上分離之氣流中之所選者的位置選擇性供應能量,以藉此選擇性供應能量至與實質上分離之氣流中之所選者相關聯之氣體。在一較佳實施例中,選擇性能量輸入裝置為微波能量或紅外線能量產生器。選擇性能量輸入裝置較佳經配置以實質上為與實質上分離之氣流中之所選者相關聯的氣體所吸收之波長供應能量。較佳為能量實質上不為其他實質上分離之氣流所吸收。
根據本發明反應器之一實施例,選擇性能量輸入裝置經配置以沿在與旋轉軸成橫向之方向上具有分量的一或多個能量束路徑引導能量束。在較佳實施例中,一或多個能量束路徑經配置以與基板載體表面鄰近截取所選氣流。
根據本發明反應器之一實施例,選擇性能量輸入裝置經配置以沿在與旋轉軸平行之方向上具有分量的一或多個能量束路徑引導能量束。在另一實施例中,選擇性能量輸入裝置經配置以沿在相對於旋轉軸成約0°與90°之間角度的方向上具有分量之一或多個能量束路徑引導能量束。在本發明裝置之另一實施例中,選擇性能量輸入裝置經配置以沿在相對於旋轉軸成約90°之角度的方向上具有分量的一或多個能量束路徑引導能量束。
參考以下詳細描述可更全面地瞭解本發明,該詳細描述又參考圖式進行。
本發明尤其係關於對MOCVD裝置中所利用之一或多種氣體反應物選擇性施加能量以形成化合物半導體。詳言之,本發明特別利用微波或IR輻射以達成此目的。已知微波能量通常係指波長在長至1公尺下至短至1毫米之範圍內或等效地頻率在300兆赫與300千兆赫之間的電磁波。另一方面,已知紅外線輻射通常為波長比可見光之波長(400至700nm)長但比兆兆赫輻射之波長(100μm至1mm)及微波之波長短的電磁輻射。根據本發明,因此術語微波輻射意欲特別包括兆兆赫輻射;亦即,因此包括對應於約1mm(其通常被稱為微波頻帶之高頻邊緣)與100微米(其為遠紅外線光帶之長波長邊緣)之亞毫米波長範圍之約300千兆赫與3兆兆赫之間的區域。
圖1示意性描繪一種常用於形成化合物半導體之MOCVD裝置形式。此裝置包括反應室10,反應室10具有可旋轉地安裝於其中之心軸12。心軸12可藉由旋轉驅動機構16圍繞軸14旋轉。軸14沿上游方向U及下游方向D延伸。基板載體(通常為盤狀晶圓載體18之形式)安裝於心軸上以隨心軸旋轉。通常,基板載體及心軸以每分鐘約100-2000轉旋轉。基板載體適於固持許多盤狀晶圓20使得晶圓表面22位於垂直於軸14之平面且面向上游方向。加熱器26(例如,電阻加熱元件)安置於反應室內以加熱晶圓載體。氣流進入元件28安裝於基板載體及心軸之上游。氣流進入元件連接至製程中使用之氣體源30、32及34。氣流進入元件將各種氣流引入反應室中。在靠近氣流進入元件28之反應室區域(本文中稱為「流動區」37)中,氣流通常向下游通向基板載體18及晶圓20。此向下流動較佳不引起分離之向下流動氣流之間的實質混合。理想地流動區37中之氣流為層狀的。當基板載體18快速旋轉時,基板載體表面及晶圓表面亦快速移動。基板載體及晶圓之快速運動夾帶氣體圍繞軸14做旋轉運動且自軸14徑向流開,且引起各種氣流中之氣體在圖1中示意指示為36之邊界層內彼此混合。當然,在實際實踐中,在流動區37中由箭頭38表示之大體上向下流動方式與邊界層36中快速旋轉流動及混合之間存在逐漸過渡。然而,邊界層可視為氣體實質上與晶圓表面平行流動之區域。在典型操作條件下,邊界層之厚度t約1cm左右。相對而言,自氣流進入元件28之下游面至晶圓表面22之距離d通常為約5-8cm。
因此邊界層之厚度實質上小於氣流進入元件28與基板載體18之間的距離d,使得流動區37占據氣流進入元件28與基板載體之間空間之主要部分。基板載體之旋轉運動在晶圓載體周邊邊緣周圍向外泵運氣體,且因此氣體向下游通至排氣系統40。通常,反應室保持在約25-1000托且最通常約100-760托之絕對壓力下。此外,關於解離第III族氫化物及第V族金屬之烷基化合物,諸如生產InGaN及GaN LED,反應室保持在500至1,100℃之溫度下。
儘管可使用較高溫度,但氣流進入元件28保持在相對低溫(通常約60℃或更低)下以抑制氣流進入元件及流動區中反應物之分解或其他不合乎需要的反應。又,反應室10之壁通常冷卻至約25℃。需要使遠離基板載體18之流動區37中氣體之任何反應的速率最小化。因為氣體在邊界層36中之滯留時間短暫,所以需要促進邊界層36中且尤其晶圓表面處之氣體之間的快速反應。在習知系統中,用於反應之能量,例如用於解離第V族氫化物(諸如NH3
)以形成反應性中間物(諸如NH2
及NH)之能量實質上僅由自基板載體及晶圓傳遞之熱量提供。因此,較高基板載體溫度及晶圓溫度傾向於提高反應速率。
然而,提高晶圓載體及晶圓之溫度亦傾向於增加沈積之化合物半導體之解離,例如,引起氮自半導體損失。此現象在富含銦之化合物(諸如InGaN及InN)情況下尤其嚴重。因此,在此情況下此等化合物具有高平衡N2
蒸氣壓,使得較高溫度增長困難得多的。因此氮傾向於為N2
形式之氣相,且此問題隨溫度升高而增加,產生縮短器件壽命且降低其效能之N空位。
此外,關於此等器件,基板表面各種組份之滯留時間極短。滯留時間越短,製程效率變得越低。因此,在基板上沈積足夠N所需要之第V族氫化物(諸如氨)之量變得越來越大,且未反應之NH3
之量隨之變大。另一方面,較長滯留時間亦為低效的。因此,在較長滯留時間下,可存在反應物(諸如第V族氫化物及第III族金屬之烷基化合物)之間發生氣相反應之機率,形成可最終形成粒子之加合物且因此自反應物消除此等物質。
根據本發明,(例如)第V族氫化物(諸如NH3
)之選擇性活化及增加此反應物之可用能量係意欲改良短滯留時間下之分解效率,且因此改良基板表面之分解,以提供更多含有N基團之物質,以(例如)形成化學計量GaN,且減少最終產物中之N空位。增加滯留時間並不合乎需要,因為氫化物之較早分解致使形成N2
及H2
(例如自氨分解),使得N不再可用於併入基板中。N2
及H2
氣體過於穩定而不與第III族金屬有機化合物反應。因此本發明之概念為防止第V族氫化物化合物在其流向基板時過早分解,但同時在氣流在基板表面之短滯留時間期間儘可能接近於基板表面使該分解最大化。此係根據本發明藉由對此等化合物特異性地以微波或紅外線輻射選擇性活化,使得此等化合物接近基板表面時其可用能量增加且其分解所需之能量減少來達成。藉由在表面位置處升高溫度而在此等表面容易地觸發分解。換言之,對所選反應物(諸如第V族氫化物化合物)選擇性地施加紅外線或微波輻射,使得此等來源自身施加不足以分解此等化合物之能量但施加足以活化該等化合物之能量。咸信此係藉由引起此等分子振動,藉此產生熱而發生。
以使得能量可選擇性地影響意欲在基板表面處或附近被活化之所要氣體物質之方式進行紅外線或微波輻射形式之此能量施加。然而,此能量之施加方向不為關鍵限制。亦即,可以相對於基板表面或相對於晶圓載體之旋轉軸成0°至90°之角度施加能量。因此能量可在基板處或附近或顯著高於邊界層與表面平行施加,或其可與基板表面成橫向角度施加,或其可直接垂直於基板表面施加。因為本發明之包含紅外線或微波輻射之特定能量束具有足夠低使得表面降解通常不構成問題之能量,所以能量可(例如)直接垂直於基板表面施加而無嚴重影響。關於各種其他形式之能量,諸如UV光,例如垂直於基板表面直接引導之能量束由於其高能量對反應製程可能為有害的。然而,如所述另一方面,關於本發明亦可能使用橫向能量束或平行於基板表面引導之能量束。
再次參看圖1,微波或紅外線輻射形式之能量例如自能量活化器(諸如能量活化器31a或能量活化器31b)施加於第V族氫化物,如圖1所示。因此能量可自能量活化器31a以與載體之旋轉軸U平行且因此直接垂直於晶圓20表面之方向直接於晶圓載體18上方施加。或者,此能量可自能量活化器31b以與晶圓載體18之表面平行且因此垂直於橫穿晶圓20表面的旋轉軸U的方向施加。在以下參考圖5論述之替代性實施例中,亦可自位於能量活化器31a與31b之間的替代性位置處的能量活化器施加能量以便以相對於旋轉軸成約0°至90°之角度,相對於旋轉軸U橫向或有角度地對晶圓載體18之表面且因此對晶圓20自身之表面施加。
藉由在反應器之不同區域中分離地引入氣體便利於對一或多種氣體選擇性施加能量而不對所有氣體施加能量。舉例而言,氣流進入元件28可如圖2所示配置。圖2為沿圖1中線2-2指示之方向向上游觀察氣流進入元件之視圖。在此配置中,氣流進入元件28具有通常相對於軸14沿徑向延伸之延長放氣區50。使用此等放氣區來釋放通常與諸如氮氣之載氣混雜之有機金屬反應物。舉例而言,氣流進入元件可具有延長槽狀放氣口或在延長區50內延伸之小型圓形放氣口列。氣流進入元件28亦具有通常以四分之一圓形圖案形式配置於軸14周圍的其他放氣區52,此等區域由圖2中的交叉線區指示。舉例而言,氣流進入元件可具有配置於此等區域中之每一者內的許多放氣埠。操作中,向下流動之有機金屬氣流存在於流動區37(圖1)與區域50對準之彼等部分中,而向下流動之氫化物(諸如氨)流存在於流動區37與氫化物放氣區52對準之彼等區域中。可藉由僅將能量引導入流動區與放氣區52對準之彼等部分中來選擇性地施加能量至氫化物。舉例而言,可配置微波源或紅外線源(未展示)以僅在輻射區或能量施加區54(如圖2所示)或僅在較小能量施加區56(亦如圖2所描繪)內施加微波或紅外線能量。儘管圖2中僅描繪兩個輻射區,但典型反應器將併有與放氣區52中之每一者對準之輻射區。
如圖3中示意性展示,氣流進入元件128可具有許多以與軸14成橫向之方向沿氣流進入元件128(圖3)延伸之延長帶或延長條形式的放氣區。氣流入口具有延長區150,在此實施例中用於供應含有金屬有機物之氣體。氣流進入元件亦具有延長放氣區152,其在此實施例中用於供應第V族氫化物。延長放氣區彼此交替且彼此平行延伸。每一該延長放氣區可包括用於釋放合適氣體之延長槽或一組沿區域之延長方向配置之孔或其他離散開口。儘管圖3中僅描繪幾個區域,但氣流入口區之圖案可涵蓋氣流進入元件之大部分或所有區域。
氣流進入元件亦可包括額外延長放氣區154,其連接至惰性氣體源。如本發明中所用,術語「惰性氣體」係指實質上不參與反應之氣體。舉例而言,在III-V半導體之沈積中,諸如N2
、H2
、He之氣體或此等氣體之混合物可充當惰性氣體。本文中亦將惰性氣體稱為「載氣」。用於釋放惰性氣體或載氣之放氣區154與用於其他氣體之放氣區150及152交替,使得載氣之放氣區154位於有機金屬氣體之各放氣區150與下一相鄰放氣區152之間。自此等各種放氣區釋放之氣體以通常在平行平面中流動之大體上層狀氣流的形式彼此不相混合地通過反應器之流動區37向下傳遞。圖4中可見該氣流之理想化表現,其展示流動區37內向下游移動之金屬有機物氣流250與氫化物流252平行且安置於其之間之載氣流254平行。在此圖式中,表示為「清除/幕狀」之圖形可表示可選載氣放氣區及自其延伸之氣流。在替代實例中,固體障壁可自氣流進入元件稍微向下游延伸,表示「冷板(頂凸緣)」。
當將微波或IR能量引入一氣流時,需要以使得輻射能量到達位於距旋轉軸14不同徑向距離處之流動氣體區域的方式施加彼能量。然而,所施加之此輻射能量通常具有經選擇使得輻射能量與待賦予能量之物質實質上相互作用的波長。因此,輻射能量將被含有彼物質之流動氣體大量吸收。如圖5所示,氣流進入元件經配置以提供兩個第一氣流352,通常為四分之一圓形式。氣流352中之氣體可為(例如)氨或另一氫化物。此外,氣流進入元件經配置以提供另一、第二氣體(諸如金屬有機物)流350A及350B。此等氣流可沿氣流352之邊緣延伸。氣流進入元件亦可經配置以提供另一種載氣之另一氣流354,其亦經配置以占據圍繞旋轉軸14的四分之一圓。如所示,輻射能量源(諸如微波或IR輻射源)可經配置以引導由氣流352中之氣體大量吸收但不由氣流350及354中之氣體大量吸收的波長之輻射能量。可引導此輻射能量穿過氣流354及350以碰撞氣流352之邊界360,該等邊界具有朝向及遠離中心軸14或旋轉軸之實質徑向延長。輻射能量通過氣流350及354,但實質上不由彼等氣流中之氣體吸收。因為輻射能量沿邊界360之徑向延長與其碰撞,所以輻射能量由位於距中心軸14所有徑向距離處的氣體部分吸收。如下文進一步論述,可能需要確保輻射能量為與流動區下端附近及邊界層36上邊界附近之氣流的相互作用所吸收。在圖5之實施例中,輻射能量源356以位於垂直於旋轉軸14之平面(亦即,大體上與晶圓之表面22(圖1)及基板載體18之上表面平行之平面)中的方向引導輻射能量束。不必需完全在該平面中引導輻射能量束,但在圖5之實施例中,需要輻射能量之方向之顯著分量在該平面中。因此,可在與中心軸14成橫向之平面中引導輻射能量束,使得其在接近邊界層36處與邊界360相交。若在與晶圓表面大體上平行之平面中引導輻射能量,則可能避免將輻射能量引導至晶圓表面上。此限制或避免輻射能量對晶圓表面之不合乎需要的效應。然而,如上文所論述,使用本文中描述之相對低能量來源,對晶圓表面之不良效應將最小。此允許吾人再次以相對於基板載體之旋轉軸成0°至90°之角度範圍施加能量。
在此配置之變型中,可省略氣流350B,而如圖示配置氣流350A。因此,第一反應氣體之每一氣流352在一徑向延伸邊界360B處與惰性氣體流或載氣流354鄰接。引導輻射能量穿過惰性氣體流或載氣流354且穿過邊界360B到達第一氣流。在此變型中,輻射能量在不通過第二反應氣流350之情況下通入第一氣體352中。可在(例如)第二反應物氣體將實質上吸收輻射能量之情況下使用此配置。舉例而言,可使用將特定地激發NH3
之波長的IR光。因此,IR光可直接配合氨之滯留頻率,氨之滯留頻率可與金屬有機物之滯留頻率相同或不相同。當然,此將視所利用之特定金屬有機物而定。可選擇金屬有機物使得其不吸收所利用之特定波長之IR光。另一方面,在微波能量情況下,因為金屬有機物及氨兩者均為非極性的,所以其皆吸收相同頻率之微波能量,而諸如氮及氫之極性分子將不吸收微波能量。再一次可利用此等因素以選擇用於任一特定情況之最佳IR或微波能量。
如圖4中示意性描繪,可穿過實質上不與輻射能量相互作用之平面氣流250、254中之一者將輻射能量R引導至反應室中,且可與吸收輻射能量之目標氣流252之理論平面呈斜角引導輻射能量。輻射能量R在邊界層36附近且因此在流動區37之下端附近進入氣流252,且因此輻射能量在邊界層附近被吸收。
通常,反應物在相對低溫下被引入反應室且因此具有低可用能量(恰好低於誘發反應物快速反應所需要之能量)。在習知製程中,當反應物自進氣口向下游通向邊界層時,可能由輻射熱傳遞在一定程度上加熱反應物。然而,大部分對反應物加熱且因此大部分反應物可用能量增加發生於邊界層內。此外,所有加熱視基板載體及晶圓之溫度而定。相對而言,在上述實施例中,大量能量供應至至少一種反應物(當反應物在流動區中時),該能量藉由除自基板載體、基板及反應器壁熱傳遞以外的方式供應。此外,可控制能量施加之位置。藉由對流動區與邊界層之間的過渡區附近的反應物施加能量,可使反應物之既定部分獲得高可用能量之時間點與彼部分碰到晶圓表面之時間之間的時間最小化。此又可有助於使不合乎需要的副反應最小化。舉例而言,具有高可用能量之氨可自然分解為諸如NH2
及NH之物質,且接著此等物質又可分解為單原子氮,單原子氮極快速地形成N2
。N2
基本上不可用於與金屬有機物反應。藉由在氨即將進入邊界層或在氨進入邊界層時對氨施加能量,可增強所需要之在表面上沈積半導體之反應,諸如晶圓表面處經激發NH3
與金屬有機物之反應或NH2
或NH物質與金屬有機物之反應,而可抑制不合乎需要的副反應。
此外,因為能量係藉由除能量傳遞(諸如自基板載體及晶圓之熱傳遞)以外的方式施加於一或多種反應物,所以可至少在某種程度上獨立於基板溫度來控制反應物之可用能量。因此,可在不增加晶圓及基板載體溫度之情況下增加邊界層中反應物之可用能量,或相反,晶圓及基板載體可保持在較低溫度下同時仍然保持可接受位準之可用能量。當然,通常存在一些自基板載體及自晶圓至反應物的能量輸入。
當根據本發明施加微波能量時,能量可以相干能量束或擴散能量束形式施加。可與基板表面平行、在接近基板之位置或顯著高於邊界層處施加能量束,或可垂直於基板或以相對於基板垂直與平行位置之間的任何角度施加能量束。可在距基板表面不同高度處施加微波能量。此外,微波可發源於一個或許多個來源且可控制此等微波以與超過一種反應物相互作用。因此,例如在第V族氫化物及第III族金屬之烷基化合物之情況下,可控制微波源以與一或多種此等來源相互作用。
類似地,在紅外線能量情況下,其亦可以相干能量束或擴散能量束形式,亦為與基板平行、垂直於基板或以之間的任一角度施加。再一次可與能量束之定向無關地以距基板表面不同高度施加紅外線能量,且其可發源於一或多個來源且可經控制以與一或多種反應物相互作用。
儘管已參考特定實施例描述本發明,但應理解此等實施例僅為本發明之原理及應用之說明。因此應理解可在不偏離由隨附申請專利範圍所定義之本發明之精神及範疇下對說明性實施例作出多種修改且設計其他配置。
2...線
10...反應室
12...心軸
14...旋轉軸/中心軸
16...旋轉驅動機構
18...載體
20...晶圓
22...晶圓表面
26...加熱器
28...氣流進入元件
30...反應物氣體源
31a...能量活化器
31b...能量活化器
32...載氣源
34...反應物氣體源
36...邊界層
37...流動區
38...箭頭
40...排氣系統
50...延長放氣區
52...放氣區
54...輻射區或能量施加區
56...較小能量施加區
150...其他氣體放氣區
152...其他氣體放氣區
154...惰性氣體或載體之放氣區
250...金屬有機物氣流
252...氫化物流
254...載氣流
350A...第二氣體流
350B...第二氣體流
352...第一反應氣體流
354...惰性氣體流或載氣流
356...輻射能量源
360A...邊界
360B...邊界
d...氣流進入元件下游面至基板載體的距離
D...下游方向
R...輻射能量
t...邊界層之厚度
U...上游方向/旋轉軸
圖1為根據本發明之反應器之側面正視部分剖視圖;
圖2為圖1中展示之反應器之一部分的底部正視圖;
圖3為根據本發明之反應器中進氣口之一部分的部分放大正視圖;
圖4為根據本發明之內部反應器之一部分的部分側面透視圖;及
圖5為根據本發明之反應器之旋轉盤的一部分之頂部正視示意圖。
2...線
10...反應室
12...心軸
14...旋轉軸/中心軸
16...旋轉驅動機構
18...載體
20...晶圓
22...晶圓表面
26...加熱器
28...氣流進入元件
30...反應物氣體源
31a...能量活化器
31b...能量活化器
32...載氣源
34...反應物氣體源
36...邊界層
37...流動區
38...箭頭
40...排氣系統
d...氣流進入元件下游面至基板載體的距離
D...下游方向
t...邊界層之厚度
U...上游方向/旋轉軸
Claims (32)
- 一種在基板上沈積化合物半導體之方法,其包含以下步驟:(a)將該基板保持在一反應室中;(b)將該反應室內之複數種氣體反應物自進氣口以下游方向引向該基板之一表面,該複數種氣體反應物適於在該基板之該表面彼此反應以在該基板上形成沈積;(c)選擇性供應能量至該進氣口下游及該基板上游的該複數種氣體反應物中之一者以賦予足以活化該複數種氣體反應物中之該一者但不足以分解該複數種氣體反應物中之該一者的能量;且(d)在該基板之該表面分解該複數種氣體反應物。
- 如請求項1之方法,其中該選擇性供應之能量係選自由微波能量及紅外線能量組成之群。
- 如請求項1之方法,其中以該複數種氣體反應物中之該一者之共振頻率供應該選擇性供應的能量。
- 如請求項1之方法,其包括將該複數種氣體反應物中之該一者引導至該基板之一預選區且同時僅選擇性供應該能量至該基板之該預選區。
- 如請求項1之方法,其中引導該複數種氣體反應物之該步驟包括將該等反應物引向該基板使得在該進氣口與該基板之該表面之間的至少一部分流動區中該複數種氣體反應物保持實質上彼此分離,且將該基板保持在該反應室中係包括保持該基板運動。
- 如請求項5之方法,其中保持該基板運動之該步驟包括使該基板圍繞該反應室中之一旋轉軸旋轉,使得該複數種氣體反應物碰撞與該旋轉軸平行之該基板之該表面。
- 如請求項6之方法,其中引導該複數種氣體反應物之該步驟包括將該等反應物引入該反應室之分離區中,且選擇性供應能量之該步驟包括僅供應能量至供應該複數種氣體反應物中之該一者的彼等區域中,且不供應能量至供應其餘該複數種氣體反應物之彼等區域中。
- 如請求項6之方法,其中該選擇性施加之能量以相對於該旋轉軸成0°與90°之間的角度施加於該複數種反應物中之該一者。
- 如請求項8之方法,其中該角度為相對於該旋轉軸成約0°。
- 如請求項8之方法,其中該角度為相對於該旋轉軸成約90°。
- 一種在一基板上沈積化合物半導體之方法,其包含以下步驟:(a)將該基板保持在一反應室中;(b)在該反應室內將包括第V族氫化物及第III族金屬之有機化合物的複數種氣體反應物自進氣口以下游方向引向該基板之一表面;(c)選擇性供應能量至該進氣口下游及該基板上游的該第V族氫化物,以賦予足以活化該第V族氫化物但不足以分解該第V族氫化物的能量;且(d)在該基板之該表面分解該複數種氣體反應物。
- 如請求項11之方法,其中該選擇性供應之能量係選自由微波能量及紅外線能量組成之群。
- 如請求項11之方法,其中以該第V組氫化物之共振頻率供應該選擇性供應之能量。
- 如請求項11之方法,其中該第V族氫化物包含NH3 。
- 如請求項11之方法,其包括將該第V族氫化物引導至該基板之一預選區且同時僅選擇性供應該能量至該基板之該預選區。
- 如請求項14之方法,其中該第III族金屬係選自由鎵、銦及鋁組成之群。
- 如請求項11之方法,其中引導該複數種氣體反應物之該步驟包括將該等反應物引向該基板,使得在該進氣口與該基板之該表面之間的至少一部分流動區中該複數種氣體反應物保持實質上彼此分離,且將該基板保持在該反應室中係包括保持該基板運動。
- 如請求項17之方法,其中保持該基板運動之該步驟包括使該基板圍繞該反應室中之旋轉軸旋轉,使得該複數種氣體反應物碰撞與該旋轉軸成橫向的該基板之該表面。
- 如請求項18之方法,其中該選擇性施加之能量由該第V族氫化物以相對於該旋轉軸成0°與90°之間的角度施加。
- 如請求項19之方法,其中該角度為相對於該旋轉軸成約0°。
- 如請求項19之方法,其中該角度為相對於該旋轉軸成約90°。
- 如請求項18之方法,其中引導該複數種氣體反應物之該步驟包括將該等反應物引入該反應室之分離區,且該選擇性供應能量步驟包括僅供應能量至供應該第V族氫化物之彼等分離區,且不供應能量至供應第III族金屬之該有機化合物之彼等分離區。
- 如請求項11之方法,其中該第III族金屬有機化合物包括銦。
- 一種化學氣相沈積反應器,其包含:(a)一反應室;(b)一安裝於該反應室內之基板載體,其用於圍繞沿上游方向及下游方向延伸之旋轉軸旋轉,該基板載體經配置以固持一或多個基板使得該等基板之表面大體上面向該上游方向;(c)一安置於該基板載體上游之氣流進入元件,該氣流進入元件具有安置於與該旋轉軸成橫向方向的不同位置之複數個放氣區,該氣流進入元件經配置以釋放不同氣體穿過該複數個放氣區中之不同者使得該等釋放之氣體大體上在相對於該旋轉軸之不同位置處以實質上分離之氣流被向下游引向該基板載體;及(d)選擇性能量輸入裝置,其經配置以在該氣流進入元件與該基板載體之間與該等實質上分離之氣流中所選者對準的位置選擇性供應能量以藉此選擇性供應能量至與該等實質上分離之氣流中之該所選者相關聯的該氣體。
- 如請求項24之反應器,其中該選擇性能量輸入裝置係選自由微波產生器及紅外線能量產生器組成之群。
- 如請求項24之反應器,其中該選擇性能量輸入裝置經配置以實質上由與該等實質上分離之氣流中之該所選者相關聯的該氣體吸收之波長供應該能量。
- 如請求項24之反應器,其中該能量實質上不由其餘該等實質上分離之氣流吸收。
- 如請求項24之反應器,其中該選擇性能量輸入裝置經配置以沿在與該旋轉軸成橫向之方向上具有分量之一或多個能量束路徑引導該等能量束。
- 如請求項27之反應器,其中該一或多個能量束路徑經配置以在該基板載體之該表面附近截取該等分離之氣流中的該所選者。
- 如請求項24之反應器,其中該選擇性能量輸入裝置經配置以沿在與該旋轉軸平行之方向上具有分量之一或多個能量束路徑引導該等能量束。
- 如請求項24之反應器,其中該選擇性能量輸入裝置經配置,以沿在相對於該旋轉軸成約0°與90°之間的角度之方向上具有分量之一或多個能量束路徑引導該能量束。
- 如請求項24之反應器,其中該選擇性能量輸入裝置經配置以沿在相對於該旋轉軸成約90°之角度的方向上具有分量之一或多個能量束路徑引導該能量束。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19509308P | 2008-10-03 | 2008-10-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201026887A TW201026887A (en) | 2010-07-16 |
TWI411700B true TWI411700B (zh) | 2013-10-11 |
Family
ID=41429649
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098133650A TWI411700B (zh) | 2008-10-03 | 2009-10-02 | 具能量輸入之化學氣相沈積 |
TW098133511A TWI429791B (zh) | 2008-10-03 | 2009-10-02 | 氣相磊晶系統 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098133511A TWI429791B (zh) | 2008-10-03 | 2009-10-02 | 氣相磊晶系統 |
Country Status (8)
Country | Link |
---|---|
US (4) | US20110174213A1 (zh) |
EP (2) | EP2332167A4 (zh) |
JP (2) | JP2012504873A (zh) |
KR (2) | KR20110079831A (zh) |
CN (2) | CN102171795A (zh) |
SG (1) | SG194408A1 (zh) |
TW (2) | TWI411700B (zh) |
WO (2) | WO2010040011A2 (zh) |
Families Citing this family (274)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101802254B (zh) | 2007-10-11 | 2013-11-27 | 瓦伦斯处理设备公司 | 化学气相沉积反应器 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110073039A1 (en) * | 2009-09-28 | 2011-03-31 | Ron Colvin | Semiconductor deposition system and method |
JP2013521655A (ja) * | 2010-03-03 | 2013-06-10 | ビーコ・インストゥルメンツ・インコーポレイテッド | 傾斜縁を有するウエハキャリア |
TWI390074B (zh) * | 2010-04-29 | 2013-03-21 | Chi Mei Lighting Tech Corp | 有機金屬化學氣相沉積機台 |
US10138551B2 (en) | 2010-07-29 | 2018-11-27 | GES Associates LLC | Substrate processing apparatuses and systems |
TW201222636A (en) * | 2010-07-30 | 2012-06-01 | Lawrence Advanced Semiconductor Technologies Llc | Systems, apparatuses, and methods for chemically processing substrates using the Coanda effect |
DE102011002146B4 (de) | 2011-04-18 | 2023-03-09 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums |
DE102011002145B4 (de) * | 2011-04-18 | 2023-02-09 | Aixtron Se | Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
CN103361633B (zh) * | 2012-04-01 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置、反应腔室以及等离子体加工设备 |
JP6235581B2 (ja) * | 2012-07-13 | 2017-11-22 | ガリウム エンタープライジズ ピーティーワイ リミテッド | 成膜装置および方法 |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
TWI502096B (zh) | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | 用於化學氣相沉積的反應裝置及反應製程 |
US9435031B2 (en) | 2014-01-07 | 2016-09-06 | International Business Machines Corporation | Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US20150361582A1 (en) * | 2014-06-17 | 2015-12-17 | Veeco Instruments, Inc. | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
CN106282969B (zh) * | 2015-06-02 | 2019-02-15 | 中微半导体设备(上海)有限公司 | 化学气相沉积装置及其沉积方法 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
JP6665726B2 (ja) * | 2016-08-01 | 2020-03-13 | 東京エレクトロン株式会社 | 成膜装置 |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) * | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10357920B2 (en) | 2017-01-17 | 2019-07-23 | Obsidian Advanced Manufacturing, Llc | Gas phase integrated multimaterial printhead for additive manufacturing |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
CN111678885A (zh) * | 2020-05-29 | 2020-09-18 | 清华大学 | 化学反应观测系统及方法 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
KR102491498B1 (ko) * | 2021-12-06 | 2023-01-27 | 한국세라믹기술원 | HVPE 성장법을 이용하여 성장한 고품질 β-Ga2O3 박막 제조장치 및 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004107744A (ja) * | 2002-09-19 | 2004-04-08 | Japan Science & Technology Corp | 光化学気相堆積装置及び方法 |
TW200730662A (en) * | 2005-11-01 | 2007-08-16 | Applied Films Corp | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231715A (ja) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | 光プロセス装置 |
US4868014A (en) * | 1986-01-14 | 1989-09-19 | Canon Kabushiki Kaisha | Method for forming thin film multi-layer structure member |
US4838014A (en) * | 1986-03-31 | 1989-06-13 | Ford New Holland, Inc. | Disc cutter rotor assembly |
JPH0744154B2 (ja) * | 1987-12-16 | 1995-05-15 | 株式会社豊田中央研究所 | 光照射型低温mocvd方法および装置 |
US5261959A (en) * | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
JPH0355827A (ja) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | 光励起エピタキシャル成長装置 |
DE3935865C1 (zh) * | 1989-10-27 | 1990-10-04 | Philips Patentverwaltung Gmbh, 2000 Hamburg, De | |
JP2822536B2 (ja) | 1990-02-14 | 1998-11-11 | 住友電気工業株式会社 | 立方晶窒化ホウ素薄膜の形成方法 |
US5079038A (en) * | 1990-10-05 | 1992-01-07 | The United States Of America As Represented By The United States Department Of Energy | Hot filament CVD of boron nitride films |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US5856695A (en) * | 1991-10-30 | 1999-01-05 | Harris Corporation | BiCMOS devices |
KR0130955B1 (ko) * | 1992-10-07 | 1998-04-14 | 쓰지 하루오 | 박막 트랜지스터의 제조방법 및 액정표시장치의 제조방법 |
JPH086181B2 (ja) * | 1992-11-30 | 1996-01-24 | 日本電気株式会社 | 化学気相成長法および化学気相成長装置 |
US5433977A (en) * | 1993-05-21 | 1995-07-18 | Trustees Of Boston University | Enhanced adherence of diamond coatings by combustion flame CVD |
KR100321325B1 (ko) * | 1993-09-17 | 2002-06-20 | 가나이 쓰도무 | 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 |
JP3468859B2 (ja) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | 気相処理装置及び気相処理方法 |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
JP3737221B2 (ja) * | 1996-09-06 | 2006-01-18 | 英樹 松村 | 薄膜作成方法及び薄膜作成装置 |
JPH10172473A (ja) * | 1996-12-12 | 1998-06-26 | Toshiba Corp | 偏向ヨーク装置 |
US5820922A (en) * | 1996-12-17 | 1998-10-13 | Sandia Corporation | Method for localized deposition of noble metal catalysts with control of morphology |
US6066204A (en) * | 1997-01-08 | 2000-05-23 | Bandwidth Semiconductor, Llc | High pressure MOCVD reactor system |
JPH10226599A (ja) * | 1997-02-12 | 1998-08-25 | Sharp Corp | 気相成長装置 |
WO1998058099A1 (de) * | 1997-06-13 | 1998-12-23 | Balzers Hochvakuum Ag | Verfahren zur herstellung beschichteter werkstücke, verwendungen des verfahrens und anlage hierfür |
US6161499A (en) * | 1997-07-07 | 2000-12-19 | Cvd Diamond Corporation | Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6194036B1 (en) * | 1997-10-20 | 2001-02-27 | The Regents Of The University Of California | Deposition of coatings using an atmospheric pressure plasma jet |
JP4556329B2 (ja) * | 1999-04-20 | 2010-10-06 | ソニー株式会社 | 薄膜形成装置 |
JP4790914B2 (ja) | 1999-05-13 | 2011-10-12 | ヴィーコ・プロセス・イクウィップメント・インコーポレーテッド | 基板上に材料をエピタキシャル成長させるための方法と装置 |
EP1198610A4 (en) * | 1999-05-14 | 2004-04-07 | Univ California | PLASMA POWER GENERATING DEVICE WITH A LARGE PRESSURE RANGE AT LOW TEMPERATURES |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US6582780B1 (en) * | 1999-08-30 | 2003-06-24 | Si Diamond Technology, Inc. | Substrate support for use in a hot filament chemical vapor deposition chamber |
US6745717B2 (en) * | 2000-06-22 | 2004-06-08 | Arizona Board Of Regents | Method and apparatus for preparing nitride semiconductor surfaces |
WO2002063065A1 (fr) * | 2001-02-09 | 2002-08-15 | Tokyo Electron Limited | Dispositif de formation de pellicule mince |
KR100402389B1 (ko) * | 2001-03-23 | 2003-10-17 | 삼성전자주식회사 | 금속 게이트 형성 방법 |
KR100425449B1 (ko) * | 2001-05-18 | 2004-03-30 | 삼성전자주식회사 | 포토 화학기상증착법을 이용한 다층막 형성방법과 그 장치 |
US6638839B2 (en) * | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
US6677250B2 (en) * | 2001-08-17 | 2004-01-13 | Micron Technology, Inc. | CVD apparatuses and methods of forming a layer over a semiconductor substrate |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
JP3759071B2 (ja) * | 2002-05-29 | 2006-03-22 | 京セラ株式会社 | Cat−PECVD法 |
JP2004103745A (ja) * | 2002-09-06 | 2004-04-02 | Japan Science & Technology Corp | ホットワイヤcvd法による窒化物半導体膜のエピタキシャル成長方法 |
JP2004165445A (ja) * | 2002-11-13 | 2004-06-10 | Furukawa Co Ltd | 半導体製造装置 |
ATE484607T1 (de) * | 2003-04-16 | 2010-10-15 | Toyo Seikan Kaisha Ltd | Mikrowellenplasmaverarbeitungsverfahren |
JP2005089781A (ja) * | 2003-09-12 | 2005-04-07 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
US7311947B2 (en) * | 2003-10-10 | 2007-12-25 | Micron Technology, Inc. | Laser assisted material deposition |
KR100513920B1 (ko) * | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | 화학기상증착 반응기 |
JP4493379B2 (ja) | 2003-11-26 | 2010-06-30 | 京セラ株式会社 | 発熱体cvd装置 |
GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
JP4468990B2 (ja) | 2004-09-27 | 2010-05-26 | ガリウム エンタープライジズ ピーティーワイ リミテッド | Iii族金属窒化膜を成長させるための方法および装置 |
DE102004052044A1 (de) * | 2004-10-26 | 2006-04-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Glühlampe mit einem Leuchtkörper, der eine hochtemperaturbeständige Metallverbindung enthält |
JP2006173242A (ja) * | 2004-12-14 | 2006-06-29 | Sharp Corp | 触媒接触型ラジカル生成装置および半導体装置ならびに液晶表示装置 |
US20060156983A1 (en) * | 2005-01-19 | 2006-07-20 | Surfx Technologies Llc | Low temperature, atmospheric pressure plasma generation and applications |
KR101358966B1 (ko) | 2005-02-28 | 2014-02-21 | 에피스피드 에스.에이. | 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정 |
JP2006251025A (ja) * | 2005-03-08 | 2006-09-21 | Canon Inc | 加熱装置 |
US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
US20090170294A1 (en) * | 2005-08-05 | 2009-07-02 | Takahiro Nagata | Method for film depositing group iii nitride such as gallium nitride |
US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
WO2008016836A2 (en) * | 2006-07-29 | 2008-02-07 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
JP5137205B2 (ja) | 2006-08-22 | 2013-02-06 | 独立行政法人産業技術総合研究所 | マイクロプラズマ法による薄膜作製方法及びその装置 |
JP2008124060A (ja) | 2006-11-08 | 2008-05-29 | Showa Denko Kk | Iii族窒化物化合物半導体発光素子の製造方法、及びiii族窒化物化合物半導体発光素子、並びにランプ |
US20080185039A1 (en) * | 2007-02-02 | 2008-08-07 | Hing Wah Chan | Conductor fabrication for optical element |
US20080241377A1 (en) * | 2007-03-29 | 2008-10-02 | Tokyo Electron Limited | Vapor deposition system and method of operating |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
GB0805837D0 (en) | 2008-03-31 | 2008-06-04 | Qinetiq Ltd | Chemical Vapour Deposition Process |
US20100006023A1 (en) * | 2008-07-11 | 2010-01-14 | Palo Alto Research Center Incorporated | Method For Preparing Films And Devices Under High Nitrogen Chemical Potential |
KR20130007589A (ko) | 2010-02-26 | 2013-01-18 | 엘리언스 포 서스터너블 에너지, 엘엘씨 | 카바이드 필라멘트에 의한 열선 화학적 기상 증착법 |
-
2009
- 2009-10-01 CN CN2009801388524A patent/CN102171795A/zh active Pending
- 2009-10-01 WO PCT/US2009/059301 patent/WO2010040011A2/en active Application Filing
- 2009-10-01 US US13/121,371 patent/US20110174213A1/en not_active Abandoned
- 2009-10-01 US US12/572,245 patent/US20100086703A1/en not_active Abandoned
- 2009-10-01 KR KR1020117010037A patent/KR20110079831A/ko not_active Application Discontinuation
- 2009-10-01 JP JP2011530254A patent/JP2012504873A/ja not_active Ceased
- 2009-10-01 EP EP09818541A patent/EP2332167A4/en not_active Withdrawn
- 2009-10-02 CN CN2009801486885A patent/CN102239277B/zh not_active Expired - Fee Related
- 2009-10-02 KR KR1020117010163A patent/KR20110074899A/ko not_active Application Discontinuation
- 2009-10-02 WO PCT/US2009/005427 patent/WO2010039252A1/en active Application Filing
- 2009-10-02 TW TW098133650A patent/TWI411700B/zh not_active IP Right Cessation
- 2009-10-02 JP JP2011530055A patent/JP5587325B2/ja not_active Expired - Fee Related
- 2009-10-02 TW TW098133511A patent/TWI429791B/zh not_active IP Right Cessation
- 2009-10-02 EP EP09789390A patent/EP2347028A1/en not_active Withdrawn
- 2009-10-02 SG SG2013074513A patent/SG194408A1/en unknown
- 2009-10-02 US US12/587,228 patent/US8815709B2/en not_active Expired - Fee Related
-
2014
- 2014-07-14 US US14/330,433 patent/US20140318453A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004107744A (ja) * | 2002-09-19 | 2004-04-08 | Japan Science & Technology Corp | 光化学気相堆積装置及び方法 |
TW200730662A (en) * | 2005-11-01 | 2007-08-16 | Applied Films Corp | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
Also Published As
Publication number | Publication date |
---|---|
TW201026887A (en) | 2010-07-16 |
WO2010039252A1 (en) | 2010-04-08 |
EP2332167A2 (en) | 2011-06-15 |
US20100087050A1 (en) | 2010-04-08 |
TW201022488A (en) | 2010-06-16 |
US20140318453A1 (en) | 2014-10-30 |
CN102239277A (zh) | 2011-11-09 |
SG194408A1 (en) | 2013-11-29 |
EP2347028A1 (en) | 2011-07-27 |
US8815709B2 (en) | 2014-08-26 |
US20100086703A1 (en) | 2010-04-08 |
TWI429791B (zh) | 2014-03-11 |
KR20110074899A (ko) | 2011-07-04 |
US20110174213A1 (en) | 2011-07-21 |
WO2010040011A2 (en) | 2010-04-08 |
KR20110079831A (ko) | 2011-07-08 |
CN102171795A (zh) | 2011-08-31 |
CN102239277B (zh) | 2013-10-23 |
JP5587325B2 (ja) | 2014-09-10 |
JP2012504866A (ja) | 2012-02-23 |
JP2012504873A (ja) | 2012-02-23 |
WO2010040011A3 (en) | 2010-07-01 |
EP2332167A4 (en) | 2012-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI411700B (zh) | 具能量輸入之化學氣相沈積 | |
JP4281059B2 (ja) | マイクロ波励起を用いる堆積方法及び堆積装置 | |
KR102152786B1 (ko) | 필름 형성 장치 및 방법 | |
US8143147B1 (en) | Methods and systems for forming thin films | |
EP2396449B1 (en) | Plasma deposition | |
TWI750441B (zh) | 用於製造石墨烯電晶體及裝置之方法 | |
CN111566046A (zh) | 制造石墨烯层结构的方法 | |
JP2011168492A (ja) | 基板上に材料をエピタキシャル成長させるための方法と装置 | |
US20130087093A1 (en) | Apparatus and method for hvpe processing using a plasma | |
TWI490367B (zh) | 金屬有機化合物化學氣相沉積方法及其裝置 | |
JP2009032785A (ja) | 気相成長装置、及び半導体素子の製造方法 | |
JP2013070016A (ja) | 窒化物半導体結晶成長装置およびその成長方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |