TWI300245B - - Google Patents

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Publication number
TWI300245B
TWI300245B TW095116571A TW95116571A TWI300245B TW I300245 B TWI300245 B TW I300245B TW 095116571 A TW095116571 A TW 095116571A TW 95116571 A TW95116571 A TW 95116571A TW I300245 B TWI300245 B TW I300245B
Authority
TW
Taiwan
Prior art keywords
light
semiconductor layer
compound semiconductor
nitride
emitting diode
Prior art date
Application number
TW095116571A
Other languages
English (en)
Chinese (zh)
Other versions
TW200707564A (en
Inventor
Akira Ohmae
Shigetaka Tomiya
Yuki Maeda
Michinori Shiomi
Takaaki Ami
Takao Miyajima
Katsunori Yanashima
Takashi Tange
Atsushi Yasuda
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200707564A publication Critical patent/TW200707564A/zh
Application granted granted Critical
Publication of TWI300245B publication Critical patent/TWI300245B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW095116571A 2005-05-16 2006-05-10 Light-emitting diode, integrated light-emitting diode and production method thereof, nitride-based III-v compound semiconductor deposition method, light source cell unit, light emitting diode backlight, light emitting diode display, and electronic device TW200707564A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005142462 2005-05-16
JP2006105647A JP5082278B2 (ja) 2005-05-16 2006-04-06 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
TW200707564A TW200707564A (en) 2007-02-16
TWI300245B true TWI300245B (enExample) 2008-08-21

Family

ID=36933328

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116571A TW200707564A (en) 2005-05-16 2006-05-10 Light-emitting diode, integrated light-emitting diode and production method thereof, nitride-based III-v compound semiconductor deposition method, light source cell unit, light emitting diode backlight, light emitting diode display, and electronic device

Country Status (5)

Country Link
US (2) US7754504B2 (enExample)
EP (1) EP1724846A3 (enExample)
JP (1) JP5082278B2 (enExample)
KR (1) KR101237198B1 (enExample)
TW (1) TW200707564A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398968B (zh) * 2010-02-03 2013-06-11 Formosa Epitaxy Inc 發光二極體結構以及其製作方法

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5250856B2 (ja) * 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
KR100755598B1 (ko) * 2006-06-30 2007-09-06 삼성전기주식회사 질화물 반도체 발광소자 어레이
KR100773555B1 (ko) * 2006-07-21 2007-11-06 삼성전자주식회사 저결함 반도체 기판 및 그 제조방법
JP4915218B2 (ja) * 2006-11-17 2012-04-11 ソニー株式会社 発光ダイオードの製造方法
KR101321356B1 (ko) * 2007-01-24 2013-10-22 엘지이노텍 주식회사 질화물 반도체 발광소자
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
KR101316121B1 (ko) * 2007-03-06 2013-10-11 서울바이오시스 주식회사 수직형 발광 다이오드의 제조방법
KR101316119B1 (ko) * 2007-03-06 2013-10-11 서울바이오시스 주식회사 발광다이오드 및 그 제조방법
JP2008270431A (ja) * 2007-04-18 2008-11-06 Sony Corp 発光ダイオードの製造方法、半導体装置の製造方法、電子装置の製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
WO2009015350A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and templates grown by the methods
KR100905859B1 (ko) * 2007-12-17 2009-07-02 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR100937591B1 (ko) * 2007-12-17 2010-01-20 한국전자통신연구원 반도체 광전 집적회로 및 그 형성 방법
KR100956456B1 (ko) 2008-01-31 2010-05-06 주식회사 에피밸리 3족 질화물 반도체 발광소자
TW200950138A (en) * 2008-05-26 2009-12-01 Genesis Photonics Inc LED chip of high-brightness light-emitting device
JP5167974B2 (ja) * 2008-06-16 2013-03-21 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
US20100213869A1 (en) * 2009-02-24 2010-08-26 Andrew Locke Illumination device
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
JP2011124323A (ja) * 2009-12-09 2011-06-23 Disco Abrasive Syst Ltd 発光デバイス、発光デバイスの製造方法および発光デバイス素材の加工装置
US8258531B2 (en) 2010-03-26 2012-09-04 Huga Optotech Inc. Semiconductor devices
CN105244422B (zh) 2010-05-31 2018-09-04 日亚化学工业株式会社 发光装置及其制造方法
CN102130254B (zh) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 发光装置及其制造方法
US8963165B2 (en) 2010-12-29 2015-02-24 Sharp Kabushiki Kaisha Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element
JP2012244087A (ja) * 2011-05-24 2012-12-10 Hitachi Cable Ltd 発光ダイオード用基板及び発光ダイオード
JP5649514B2 (ja) * 2011-05-24 2015-01-07 株式会社東芝 半導体発光素子、窒化物半導体層、及び、窒化物半導体層の形成方法
JP2013084832A (ja) * 2011-10-12 2013-05-09 Sharp Corp 窒化物半導体構造の製造方法
KR101402785B1 (ko) * 2011-12-29 2014-06-11 한국산업기술대학교산학협력단 적층 결함이 없는 질화물 반도체 상의 고품질 반도체 소자의 제조 방법
US9136820B2 (en) * 2012-07-31 2015-09-15 Tdk Corporation Piezoelectric device
CN104025260B (zh) * 2012-08-03 2016-11-23 夏普株式会社 氮化物半导体元件结构体及其制造方法
JP5518270B1 (ja) * 2012-08-06 2014-06-11 日本碍子株式会社 複合基板および機能素子
TWI467125B (zh) 2012-09-24 2015-01-01 Ind Tech Res Inst 量測系統與量測方法
DE102012217640B4 (de) * 2012-09-27 2020-02-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
KR101982626B1 (ko) * 2012-10-17 2019-05-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
CN103811592A (zh) * 2012-11-12 2014-05-21 展晶科技(深圳)有限公司 发光二极管制造方法
CN103811612B (zh) * 2012-11-12 2017-01-18 展晶科技(深圳)有限公司 发光二极管制造方法及发光二极管
KR102120264B1 (ko) * 2013-02-11 2020-06-09 루미리즈 홀딩 비.브이. 발광 디바이스 및 발광 디바이스를 제조하기 위한 방법
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
DE102014101966A1 (de) 2014-02-17 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektronischen Halbleiterchips und elektronischer Halbleiterchip
JP6135751B2 (ja) * 2015-02-18 2017-05-31 日亜化学工業株式会社 発光素子
US10069037B2 (en) * 2015-04-20 2018-09-04 Epistar Corporation Light-emitting device and manufacturing method thereof
US9812322B2 (en) * 2015-08-26 2017-11-07 Epileds Technologies, Inc. Sapphire substrate with patterned structure
JP2016066814A (ja) * 2015-12-22 2016-04-28 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
JP2017188603A (ja) * 2016-04-07 2017-10-12 三菱電機株式会社 半導体装置
EP3443594A4 (en) * 2016-04-15 2019-12-18 Glo Ab METHOD FOR GENERATING AN ARRANGEMENT FROM A UNIT WITH MULTIPLE CELLS
DE102016110790B4 (de) 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
US9741273B1 (en) 2016-08-10 2017-08-22 Jeffrey A. Curtis Illuminated assemblies and methods of manufacture thereof
CN111052415B (zh) * 2017-08-24 2023-02-28 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
WO2019066955A1 (en) 2017-09-29 2019-04-04 Intel Corporation LATERAL EPITAXIAL OVERCROWTH IN MULTIPLE STEPS OF III-N FILMS WITH LOW DENSITY OF DEFECTS
WO2019066936A1 (en) * 2017-09-29 2019-04-04 Intel Corporation LIGHT-EMITTING DEVICES HAVING QUANTUM WELL STRUCTURES ON SEMI-POLAR OR NON-POLAR CRYSTALLINE PLANS
TWI706580B (zh) * 2019-12-03 2020-10-01 光鋐科技股份有限公司 紫外光發光二極體
KR102152007B1 (ko) * 2020-03-18 2020-09-04 주식회사 탑 엔지니어링 기판 절단 방법 및 기판 절단 장치
CN112820630A (zh) * 2020-12-31 2021-05-18 中山大学 一种降低硅基异质外延生长三五族半导体中位错缺陷密度的方法
CN112397571B (zh) * 2021-01-18 2021-04-23 苏州纳维科技有限公司 一种氮化镓衬底及半导体复合衬底
CN115241341A (zh) * 2022-08-08 2022-10-25 福建晶安光电有限公司 一种图形衬底及其制作方法
CN115832138B (zh) * 2023-02-16 2023-06-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
CN120786939A (zh) * 2025-09-11 2025-10-14 珠海格力电子元器件有限公司 衬底结构、衬底结构的制备方法和半导体结构
CN120835585A (zh) * 2025-09-18 2025-10-24 中科(深圳)无线半导体有限公司 一种氮化镓基外延结构及制备方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172906A (en) * 1977-05-11 1979-10-30 Rockwell International Corporation Method for passivating III-V compound semiconductors
JPH06105797B2 (ja) 1989-10-19 1994-12-21 昭和電工株式会社 半導体基板及びその製造方法
JP3934320B2 (ja) 1997-03-13 2007-06-20 日本電気株式会社 ＧａＮ系半導体素子とその製造方法
JPH11130597A (ja) * 1997-10-24 1999-05-18 Mitsubishi Cable Ind Ltd 転位線の伝搬方向の制御方法およびその用途
JP3930161B2 (ja) 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
US6015979A (en) 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
JP3196833B2 (ja) 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
US6360352B2 (en) 1998-07-17 2002-03-19 David E. Wallace Digital circuit layout techniques
JP4032538B2 (ja) 1998-11-26 2008-01-16 ソニー株式会社 半導体薄膜および半導体素子の製造方法
SE9900868D0 (sv) * 1999-03-09 1999-03-09 Georg Kinigalakis Placeringsenhet för människa
JP4925497B2 (ja) 1999-06-28 2012-04-25 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体装置の組立方法およびｉｉｉ−ｖ族半導体装置
JP2001148543A (ja) 1999-11-19 2001-05-29 Sony Corp Ｉｉｉ族窒化物半導体の製造方法および半導体装置の製造方法
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
US7026059B2 (en) 2000-09-22 2006-04-11 Circuit Foil Japan Co., Ltd. Copper foil for high-density ultrafine printed wiring boad
JP4043193B2 (ja) 2001-01-11 2008-02-06 日亜化学工業株式会社 窒化物半導体基板及びその製造方法
US6864158B2 (en) 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
EP1378949A4 (en) * 2001-03-21 2006-03-22 Mitsubishi Cable Ind Ltd SEMICONDUCTOR LUMINESCENT DEVICE
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP2003077847A (ja) * 2001-09-06 2003-03-14 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP4118061B2 (ja) * 2002-02-07 2008-07-16 三洋電機株式会社 半導体の形成方法および半導体素子
JP2004002081A (ja) 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd パターニングサファイヤ基板
JP4201079B2 (ja) 2002-12-20 2008-12-24 昭和電工株式会社 発光素子、その製造方法およびｌｅｄランプ
US7042150B2 (en) 2002-12-20 2006-05-09 Showa Denko K.K. Light-emitting device, method of fabricating the device, and LED lamp using the device
JP3966207B2 (ja) 2003-03-28 2007-08-29 豊田合成株式会社 半導体結晶の製造方法及び半導体発光素子
JP4199599B2 (ja) * 2003-06-03 2008-12-17 住友化学株式会社 ３−５族化合物半導体の製造方法
JP2005012063A (ja) * 2003-06-20 2005-01-13 Fujitsu Ltd 紫外発光素子およびその製造方法
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
KR100586970B1 (ko) * 2004-05-28 2006-06-08 삼성전기주식회사 액정 디스플레이 표시장치의 백라이트 유닛
JP4571476B2 (ja) * 2004-10-18 2010-10-27 ローム株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398968B (zh) * 2010-02-03 2013-06-11 Formosa Epitaxy Inc 發光二極體結構以及其製作方法

Also Published As

Publication number Publication date
JP5082278B2 (ja) 2012-11-28
US20100308349A1 (en) 2010-12-09
EP1724846A2 (en) 2006-11-22
KR20060118349A (ko) 2006-11-23
TW200707564A (en) 2007-02-16
EP1724846A3 (en) 2013-12-25
JP2006352084A (ja) 2006-12-28
US7754504B2 (en) 2010-07-13
US20060258027A1 (en) 2006-11-16
KR101237198B1 (ko) 2013-02-25

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