KR101237198B1 - 발광 다이오드 및 그 제조 방법, 집적형 발광 다이오드 및 그 제조 방법, 질화물계 ⅲ-ⅴ족 화합물 반도체의 성장 방법, 광원 셀 유닛, 발광 다이오드 백라이트, 발광 다이오드 디스플레이, 및 전자 기기 - Google Patents

발광 다이오드 및 그 제조 방법, 집적형 발광 다이오드 및 그 제조 방법, 질화물계 ⅲ-ⅴ족 화합물 반도체의 성장 방법, 광원 셀 유닛, 발광 다이오드 백라이트, 발광 다이오드 디스플레이, 및 전자 기기 Download PDF

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KR101237198B1
KR101237198B1 KR1020060043374A KR20060043374A KR101237198B1 KR 101237198 B1 KR101237198 B1 KR 101237198B1 KR 1020060043374 A KR1020060043374 A KR 1020060043374A KR 20060043374 A KR20060043374 A KR 20060043374A KR 101237198 B1 KR101237198 B1 KR 101237198B1
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light emitting
emitting diode
semiconductor layer
compound semiconductor
gan
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KR20060118349A (ko
Inventor
아끼라 오마에
시게따께 도미야
유끼 마에다
미찌노리 시오미
다까아끼 아미
다까오 미야지마
가쯔노리 야나시마
다까시 단게
아쯔시 야스다
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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KR1020060043374A 2005-05-16 2006-05-15 발광 다이오드 및 그 제조 방법, 집적형 발광 다이오드 및 그 제조 방법, 질화물계 ⅲ-ⅴ족 화합물 반도체의 성장 방법, 광원 셀 유닛, 발광 다이오드 백라이트, 발광 다이오드 디스플레이, 및 전자 기기 Expired - Fee Related KR101237198B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005142462 2005-05-16
JPJP-P-2005-00142462 2005-05-16
JP2006105647A JP5082278B2 (ja) 2005-05-16 2006-04-06 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JPJP-P-2006-00105647 2006-04-06

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KR20060118349A KR20060118349A (ko) 2006-11-23
KR101237198B1 true KR101237198B1 (ko) 2013-02-25

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KR1020060043374A Expired - Fee Related KR101237198B1 (ko) 2005-05-16 2006-05-15 발광 다이오드 및 그 제조 방법, 집적형 발광 다이오드 및 그 제조 방법, 질화물계 ⅲ-ⅴ족 화합물 반도체의 성장 방법, 광원 셀 유닛, 발광 다이오드 백라이트, 발광 다이오드 디스플레이, 및 전자 기기

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US (2) US7754504B2 (enExample)
EP (1) EP1724846A3 (enExample)
JP (1) JP5082278B2 (enExample)
KR (1) KR101237198B1 (enExample)
TW (1) TW200707564A (enExample)

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