TWI257648B - Substrate holder having a fluid gap and method of fabricating the substrate holder - Google Patents

Substrate holder having a fluid gap and method of fabricating the substrate holder Download PDF

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Publication number
TWI257648B
TWI257648B TW094102318A TW94102318A TWI257648B TW I257648 B TWI257648 B TW I257648B TW 094102318 A TW094102318 A TW 094102318A TW 94102318 A TW94102318 A TW 94102318A TW I257648 B TWI257648 B TW I257648B
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Taiwan
Prior art keywords
substrate
cooling
heating
support
substrate holder
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TW094102318A
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English (en)
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TW200534349A (en
Inventor
Thomas Hamelin
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Description

1257648 九、發明說明： 【發明所屬之技術領域】 本發明一般關於半導體處理系統，尤有關於一種具有流體間 隙之基板支座及其製造方法。 【先前技術】
許多製程(例如：化學上的、電漿電感的、蝕刻及沈積的）均 與基板（亦稱為晶圓）的瞬間溫度息息相關。因此，控制基板溫度 的月匕力便成了半導體處理糸統的一個必要的特性。此外，為快速 應用（在某些重要案例中為週期性地)在同一真空室内需要不同條 件=各式製程，即需要迅速改變及控制基板溫度的能力。控制基 板溫度=方法之一是藉由加熱或冷卻基板支座（亦稱作夾具）來達 成。之前冒有數種快速完成加熱或冷卻基板溫度之方法被提出及 應用’但於現存的方法中，並沒有任何能提供足夠迅速的控以滿 足工業上日益增長之需求的方法。 例如·、令流體流經夾具上的渠道為現存系統中冷卻基板的方 /之。然而，该流體溫度係藉由一冷卻器來控制，部分因為雜 寸ΐ小之故，冷卻器經常被放置在—遠離夾具組件之處。 =冷心體不可忽視_積及加熱和冷卻上的f力限制，冷卻 能力亦受到限制。此外，夾具會有-段額外的 =他二 == 的/皿度，但其冷卻則仍然有賴於由冷卻器來控 = 大:須f以限制’ “ΐ與：加熱 素均對於基板溫度變化之絲速度加上了了加丨^速率。凡此種種因 5 1257648 此外’要製造基板支座，則內嵌之加熱器及冷卻流體渠道組 件須彼此黏合，俾使其可達到令人滿意之結合強度；然而，該黏 合方式不應阻礙基板支座溫度之快速變化能力。 【發明内容】 本發明之一目的在於解決或減缓基板處理裝置技藝中之上述 和/或其他問題； 鲁 本發明之此等和/或其他目的，可藉由一用於支撐基板的基板 支座來提供，該基板可包含一阯鄰於一支撐面且置於該#擋而溆
、本發明之另一目的在於提供一種基板支座，該基板支座具有 以可k供令人滿意之強度之方式來彼此黏合，但卻不致妨礙基板 支座溫度之快速變化能力之加熱器及冷卻渠道組件。 【實施方式】 茲參照圖示，在所有數個圖示中，
相同的參照數字表示相同 ’可用於例如化學和/或電 10、一具有一支撐面22 1257648 之基板支座20、及由一基板支座20所支撐的基板3〇。此處理系 統1亦包括一在處理室1〇中用於提供減壓環境之幫浦系統4〇; 一 内嵌電子加熱構件50，其由魏130提供能源；及—_冷卻構 件60，其上具有使液體流動之渠道，其中該液體流動係由冷卻渠 道組件120來控制。於加熱構件5〇及冷卻構件6〇間設置有一流 體間隙9G。兹設置有_流體供應單元14{)，崎過導管⑽供靡並 從流體_ 9G移除顏92，而促進基板支座2Q之加熱及冷g。 作為-非限定性之範例，該流體可為氦氣(He)，或是任何其他能 夠迅速並顯著地增加或減少橫越流咖隙⑽之熱傳導的流體。 圖^及圖3顯示了更多與基板3〇相關之基板支座2〇的細節。 如圖所示，氦氣背侧流80是由-氦氣供應源(未顯示)提供，其係 用以挺升基板支座20與基板30之間的熱傳導。此提升後之熱傳 導確保了直接_於加熱構件5G之支撐面22的迅速溫控可致使 =30亦達到迅速溫控。支禮面22上之溝槽係驗晶圓背侧氣 體为配。用於背概之典型氣體為氦及氬(Ar)，但亦可使用豆他 氣體。基板支座20可包括-靜電夾持電極(未顯示）、及一對^的 供:器與提供基板3〇與基板支座20間之靜電夾持所需 如圖2及圖3所示，加熱構件50可具有一主體部52,其適合 在加熱構件50及冷卻構件60之操作期間，傳熱至基板支座2〇並 =來自基板支座2G之熱傳出’繼而傳熱至基板％並將來自基板 3〇之^傳出。此主體部52可聽合金打造且可以加工或禱造來形 成。於本發明之-較佳實施射，域部52是由雜合金製成的。 j部52可包括-内嵌加熱器54。此内嵌加熱器54可包括 一或更多加熱器區域’其可獨立受能以加熱主體部52之區段，並 ，熱量傳輸至基板支座20及基板30。於本發明之—較佳實施例 中，主體部52包括了兩獨立受能並鑄入加熱構件5〇主體部52中 iit器^ΐΓ加歷50為―紐酬52及内嵌加 7 1257648 一包括主體部52及内喪加熱器54之較佳加熱構件50的實施 例是可購自位於密蘇里州聖路易市的Watl〇w電子製造公司 (Watlow Electric Manufacturing Co·)的一種平板加熱器，其具 有直徑約〇· 4刪之英高鎳（inconei)合金外管、及一以氧化锃 而與外管絕狀祕合錢材域ϋ。 如圖2及圖3所示，冷卻構件6〇可包括一上蓋62及一下蓋 6曰4，其適合於冷卻構件6〇操作期間，傳輸來自基板支座2〇之熱 量’接著傳輸來自基板30之熱量。 、
、、上蓋62可包括複數個渠道66，該渠道66係被安排來容納由 冷卻渠道組件120控制的液體流，藉此使冷卻構件6〇降溫，繼而 使基板支座20及基板30降溫。上蓋β2可由鋁合金打造，且可利 =加工或鑄造來形成。於本發明之一較佳實施例中，上蓋62是由 鑄鋁合金打造，且更佳的是，其與加熱構件5〇主體部52使用 同的禱銘合金。 上罢ΐ卻構之下蓋64可包括—平坦表面，該平坦表面係以 二、2之渠严66來界定一封閉體積，以防止液體自冷卻構件60 於太，。下蓋64可用銘合金打造，和/或以鑄造來形成。因此， 明之-較佳實施例中，下蓋64是由鑄鋁合金打造，且 ^:其與冷卻構件6G之上蓋62使用相同的鑄齡金，又再更 土的=’其與加熱構件5〇之主體部52亦使用相同的禱銘合金。 卻構ίΐίΐ附的是包含完全設置於上蓋62中之渠道66之冷 上蓋或下i ’但鑛的是，渠道66可設置於 -内ίΚίΓΙΤΐ⑺流體間隙9G可以妓在冷卻構件6〇之 的方式，使其強度改變約兩個等級（order)或以上。 制 8 1257648 流體_ 9G之細節於申請人之共同提出申請 揭^67内號案號237539US6YA)中有探討，兹Ξ其全ί ^^=^參4，於此共同提出中請之_中^明 i-L中包含—第—區域咖以及一第二區域94b， ί:4=:ΪΪ内溝槽及内進出口(未顯示)所形成，而第二區 L内溝样支配在夕ί出口（未顯示）所形成。在此双區域系統 溝槽支配在基板支座2〇之第一區域_中之壓力、 而。外溝槽則支配在基板支座2G之第二區域“中的 ^二條件由。早區域系統或㈣域系統中之任何溝槽皆可完全或 50之:)、、f Γ 冷部構件60中，尤其是在加熱構件 之主體α卩52以及冷卻構件β〇之上蓋62中。 絲將基板支座20之構件間之連結情形的細節討論如下。 應明瞭的是：圖1至3所顯示之系統是僅具示範性的，其中 ^其他元件。例如：處理祕1亦可包括—射頻電源供應 :$頻電源饋送、用以放置及移除晶圓之栓銷、熱感測器、 其他在此技藝中所熟知的元件。處理系統1亦可包括進入 ί空室1G之處理氣體線路、及用以將真空室10之氣體激發成電 電容搞合型系統之）第二電極或電感（電感_禺合型系統之)射 頻線圈。本發明亦可用於非賴處理，如晶圓之快速熱處理。 本發明之各種實施例可操作如下。於加熱階段中，電力將被 供應至加熱構件50，同時，流體92自流體間隙90被排放至一約 =Torr的低壓，如此大幅降低了橫越流體間隙9〇之熱傳導，俾使 ，體間隙9G可作為-熱屏障。換言之，排放步驟有效地分隔基板 支，20緊鄰冷卻構件6〇的部份與基板支座2〇緊鄰加熱構件5〇 的。卩伤’如此’加熱構件5〇所需加爇之基板支座2〇之主要部份 即有效地減少至只剩加熱構件50正上方且緊鄰加熱構件50之基 板支座20之部份而已，因而容許支撐面22及晶圓3〇得到迅速的 加熱。之另一種替代使用加熱構件5〇之方式，可由一外部熱通量 9 1257648 提供=,:如得自於真空室10中所產生之電襞的熱通量。 流體“ ^階加熱構件5G將處於關閉狀態，流體犯係自 啟早&⑽被供應至流_隙9G巾，而冷卻構件60則被 滿产rtf，90在較紐力（例如域壓（76GTQrr))下填 流體間隙9G之熱傳導將大為增加，從而可 構件來提供支撐面22以及晶圓30的迅速冷卻。加熱 =二，2及冷卻構件6〇之上蓋62間之^二 體92自流體間隙90流溢出去。 j 本^之各種實施例可如下組裝、製作或上 渠道66形成在冷卻構件60之上蓋62或者下开蓋成64 ^ 道66。以適當材質形成之上芸62及下甚=目ϋ:，猎此關閉渠 片型式的銅焊材料82,及藉由加敎冷卻 溶點但低於上蓋62和/或下蓋64熔 :iU可彼此，在一起。因此，於本發明之-較佳實施 例中，，、匕3由相同鑄鋁合金所形成的上蓋肋及下 ; 62可被銅焊至下蓋64以形成冷卻構件6〇。 上盍 加熱構件50之主體部52可與内嵌加熱器54 形成加熱構件50。 措此 加熱構件50及冷賴件6G可互鱗結，尤狀加 之主體部52及冷卻構件60之上蓋62。如同上文發明說^月― 所述丄加熱構件50及冷卻構件6〇應彼此黏合，俾使同時=a 人滿思之強度及熱傳導性。依本發明之一實施例，以適當 成之加熱構件50之主體部52及冷卻構件6〇之上蓋似 驻^ 在加熱構件50及冷卻構件6G兩表關加人或 二 材料84而將之彼此銅焊在一起。加熱構件5〇 -高於解㈣84之雜但储加絲件5G和 其中之-或兩者的熔關溫度下被加熱。因此，於本發 佳實施例中’其包含以相同鑄銘合金所形成的主體部 10 1257648 g 60主焊至上蓋62以連接加熱構件5G及冷卻構 千⑽猎此开>成基板支座2〇的至少一部份。 然而，本案發明人曾指出：加熱構件50及 可，;銅焊材料84流入主體部52與上蓋62之間二3 的俱因除了被用於填充及排放流體92的流體間隙90 ‘提供 可使銅焊材料84流入_間隙9〇 一事能減少或不發生: ^主體部52和/或上蓋62設置溝槽7G。溝槽7()之尺= ^/、或位向皆可估算以防止銅焊材料84流過溝槽。溝槽7 f用 同:圓型式，且可形成於加熱構件5〇及冷卻構件6〇 A中之 體部52和/或上蓋62);亦可使用多
支撐面22可與域部52連結。於本發明之—難f 支撐面22可藉_純_為基礎之黏合_顧性地 體部52。該黏合劑必須容許黏合部份之差異性熱膨脹。 經銅焊後之基板支座20可藉由例如退火、硬電鍍、明 化纪陶竟喷塗等來加以處理，以提供所需之機械性f、硬产’ 電漿性、或其他加熱構件50及冷卻構件60所需之性質，=括一 個或更多基板支座20之構件於銅焊期間將妥協的性質'( 火以減輕殘餘應力）。 、ν Η ·退
本發明可有效地應用於各式以有效溫控或迅速溫控為要的 統。此等/系統包括用及電漿處理、非電漿處理、化學處理、蝕刻、 沈積、薄膜形成或灰化的系統，但不以此為限。本發明亦可^用 於一非以半導體晶圓為標的物的電漿處理設備，如LCD破璃美板 或類似的裝置。此外，應明瞭的是：本發明亦可施行於一些供 選擇之實施例中，其中加熱構件50包括一或更多熱電（珀^帖了 Peltier)裝置，或一或更多類似於冷卻渠道66之渠道，升高溫度 之氟化介電液體、水、或蒸汽將流經該渠道。 X 熟悉此項技術之人士應暸解：在不脫離本發明之精神或必要 特徵下，本發明可以使用其他特定形式實施之。因此，當前揭示 ^257648 。本發明之範圍 ’所有與申請專 ，貫知例在各方面應視其為舉例性而非限制性者 ^由隨附之申請專· _非由上述說明所指示 判乾圍意義相等之變化均應包含於本發明之中。 【圖式簡單說明】 aft於說财且構成卿書之—部分_®，_了本發明 ^佳貫施例，祕®稍上述—般說明及τ方較佳實施例的詳 、、'田说明，一起用於解釋本發明之原理。 圖1是依本發明一示範實施例之半導體處理設備的示意圖。 圖2疋圖1之基板支座的一橫剖面圖。 圖3是圖2之基板支座之一部份的詳圖。 【主要元件符號說明】 1〜處理系統 10〜真空處理室 20〜基板支座 22〜支撐面 30〜基板 40〜幫浦系統 50〜加熱構件 52〜主體部 54〜内嵌加熱器 60〜冷卻構件 62〜上蓋 64〜下蓋 66〜渠道 70〜溝槽 82〜銅焊材料 84〜銅焊材料 1257648 90〜流體間隙 92〜流體 94a〜第一區 94b〜第二區 98〜導管 120〜冷卻渠道組件 130〜電源供應 140〜流體供應單元
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Claims (1)

1257648 十、申請專利範圍： 1· 一種基板支座，用以支撐基板，包括： 一支撐面； 一冷卻構件； 咖Ίί熱構件，設置於轉於該域面且在該支撐面及該冷卻 構件之間； 隙，設置於該冷卻構件賊加熱構狀間，此流體 m接受—流體’以改變該冷卻構件及該加熱構件之間的 熟得等，以及 兮轉材料’配置於该冷卻構件及該加熱構件之間且p比鄰於 该流體間P永。 ^如申口月專利範圍第1項之基板支座，其中該加敎構件包括一主 體部及一配置在該主體部中的内嵌加熱器。 Μ :·如申，專利範圍f 2項之基板支座，其中該主體部由一紹合金 、、且成，且該内嵌加熱器係鑄於該銘合金中。 “ 利乾圍第1項之基板支座，其中該冷卻構件包括一上 5. 如申請專利範圍第4項之練支座，其中 於接受冷卻流體義道。 I上紅括稷數細 6. 如申請專利範圍第5項之基板支座，並中兮 坦上表面且設置於_該上蓋的平板。4括—，、有平 7. 如申請專利範圍第6項之基板支座，更包括： δ λ二置^於該上蓋及該下蓋之間的第二鱗材料。 8. 如申請專利範圍第1項之基板支座，更包括. ο Λΐϊϊίί面及該加熱構件之間的機械性連接物。 括-黏合劑。 ⑬叉压其中，该機械性連接物包 10.如申請專利範圍第1項之基板支座， 在该加熱構件與該冷卻構件至少射之—中的至^ 14 1257648 槽。 圍第10項之基板支座’其中該流_溝槽配 以=Γ°項之基板支座’其中，該流體間_ 13. 1申I請專利範圍$ 1項之基板支座’更包括： Γ逆；=====構件之間’該 部份酉乂項之基板支座，其中該隔離溝槽至少-15·如申請專利範圍第13項之基 部份配置在該加熱構件中。败从-中孤離溝槽至少- 16·如申請專利範圍第15項之基板支座，i 部份配置在該冷卻構件中。 ，、中^隔離溝槽至少一 含複數個第13項之基板支座，其巾至少—隔離溝槽包 利範圍第17項之基板支座，其中該複數個隔離溝槽 19· t申請專利範圍第1項之基板支座，更包括： 材料流入該流體_巾。 轉職祕防止_焊 20·如申請專利範圍第18項之基板支座， 在該加熱構件及該冷卻構件至少一者中。τ /一加離溝槽配置 21·如申凊專利範圍们9項之基板支座，其中該加執 卻構件包含齡金。 μ 〃 ^加_件及該冷 22·如申請專利範圍第19項之基板支座，苴中 卻構件包含一相同的鋁合金。 ’、μ ”、、構件及該冷 23.如申請專利範圍第-,* ο. 阁乐u狀基板支座’其巾該加熱構件包括一 1257648 ，體。P及内嵌力卩熱③’該内嵌力卩熱器被鑄入該主 體部中 ，利制第22項之基板支座，射該^卩構 盍及-下蓋，該加熱構件置放在該域面及該上 I 專利範圍第24項之基板支座，其中該上蓋包曰1一同於 该加熱構件之鋁合金~ ^ 3 1 26· —種基板支座，用以支撐基板，包括： 一支撐面； 设置於轉該战面錄賊讀面與該冷卻 一冷卻構件； 一加熱; 構件之間； 間_^^=’、=_冷卻構倾該加熱獅1，該流體 接收l以改變該冷卻構件及該加熱構件之間的 一銅焊材料，配置於該冷卻構件與該加執 於該流體間隙，·以及 …、偁仵之間，且_ 用以防止該銅焊材料流入接觸區的裝置。 2包7括專利範圍第26項之基板支座，其中該防止流入之裝置 配置在該加 1ΐ:;:=8項之基板支座，其中該溝槽至少-部份 i〇配項之基板支座’其中該溝槽至少一部份 31. 如申請專利範圍帛30項之基板支座，其中 份被配置在該冷卻構件中。 ~ / 霉僧至乂一^ 32. -種基板支座的製造方法，該基 冷卻構件，該方法包括： &匕3加熱構件及— 設置一流體間隙，其用於接收—流體，以改變該加熱構件及 16 1257648 該冷卻構件間的熱傳導；以及 在該加熱構件與該冷卻構件之間插入一阯鄰於該流體間隙之 銅焊材料。 33·如申請專利範圍第32項之基板支座的製造方法，更包括： 以 利用該銅焊材料來對該加熱構件及該冷卻構件進行鋼ρ， 形成該基板支座。 34.如申請專利範圍第33項之基板支座的製造方法，更包括· 4
於該加熱構件及該冷卻構件間設置一溝槽，該溝槽係 ^ 銅焊材料流入該流體間隙中。 ㈢，、万止該 35·如申請專利範圍第32項之基板支座的製造方法，更包括· 將一内嵌加熱器鑄入一主體部中以形成該加熱構件。· 36.如申請專利範圍第35項之基板支座的製造方法，其中該 部包含一鋁合金，且該内嵌加熱器係鑄於該鋁合金中。 Λ體 37·如申請專利範圍第32項之基板支座的製造方法，更包括· 聯結一上盖及一下蓋以形成該冷卻構件。
38二如申請專利範圍第37項之基板支座的製造方法，其中 括複數個用於接收冷卻流體的渠道。 ”盍包 39·如申請專利範圍第37項之基板支座的製造方法，其中註 包括一具有平坦上表面且與該上蓋Ρ比鄰設置的平板。 Λ盍 40.如申請專利範圍第39項之基板支座的製造方法， 將該上蓋銅焊至該下蓋。 · ’更包括： ，其中該機械 ’其中該加熱 ’其中，該加 41·如申請專利範圍第32項之基板支座的製造方法 機械性地將一支撐面連接至該加熱構件。 42·如申請專利範圍第41項之基板支座的製造方法 性連接物包括一黏合劑。 43·如申請專利範圍第32項之基板支座的製造方法 構件及该冷卻構件包含一銘合金。 44·如申請專利範圍第32項之基板支座的製造方法 熱構件及該冷卻構件包含一同樣之鋁合金。 17 1257648 45. -種基板支座，用以支撐基板，包括·_ 一支撐面； 冷卻該支撐面之裝置； 加熱該支撐面之裝置，其位置為轉 支撐面及該冷卻裝置之間； 、Μ支撐面，且介於該 用於接受一流體之裝置，以改變該〉人 ，專導，該接受-流體之請皮放;於==喷裝置之 裝置之間；以及， 、忒冷部裝置及該加熱 聯結該冷卻裝置及該加熱裝置之裝置。 =·如申請專利範圍第45項之基板支座，复 熱電裝置及一渠道至少其中之一，誃泪7中忒加熱裝置包括一 化介電液體、水、或航以其巾之帛以使升高溫度之氟 47.如申請專利範圍第45項之基板支座瓜，复 至夕—熱電裝置。 ^中，6亥冷卻骏置包括 十 囷式 18
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WO2005074450A2 (en) 2005-08-18
JP4833859B2 (ja) 2011-12-07
TW200534349A (en) 2005-10-16
US20070224777A1 (en) 2007-09-27
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KR101118863B1 (ko) 2012-03-19
JP2007525833A (ja) 2007-09-06

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