TWI308364B - Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus - Google Patents
Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus Download PDFInfo
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- TWI308364B TWI308364B TW095111194A TW95111194A TWI308364B TW I308364 B TWI308364 B TW I308364B TW 095111194 A TW095111194 A TW 095111194A TW 95111194 A TW95111194 A TW 95111194A TW I308364 B TWI308364 B TW I308364B
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- insulating
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- insulating structure
- heat
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- 238000010438 heat treatment Methods 0.000 title claims description 68
- 239000000758 substrate Substances 0.000 title claims description 22
- 239000012212 insulator Substances 0.000 claims description 50
- 238000005192 partition Methods 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000005452 bending Methods 0.000 claims description 20
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 description 28
- 238000003780 insertion Methods 0.000 description 19
- 230000037431 insertion Effects 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000003405 preventing effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 238000007666 vacuum forming Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000072 bismuth hydride Inorganic materials 0.000 description 1
- BPBOBPIKWGUSQG-UHFFFAOYSA-N bismuthane Chemical compound [BiH3] BPBOBPIKWGUSQG-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- -1 iron chromium aluminum Chemical compound 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
- Furnace Details (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
1308364 九、發明說明： 【發日月戶斤屬 <技術領域】 發明領域1308364 IX. Description of the invention: [Days of the Sun and the Moon] <Technical Fields] Field of the Invention
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本發明涉及發熱體的保持構造體、絕緣構造體、加熱 裝置及基板處理裝置’特別涉及保持發熱體的—對供電部 的技術，例如在組裝有半導體積體電路裝置（以下稱作IC) 的半導體晶片（以下稱作晶片）上沈積（deposition) 了絕緣 膜、金屬制膜以及半導體膜的CVD裝置、氧化膜形成裝置、 擴散裝置、在用於進行離子注入後的載體活性化和平坦化 的回流（reflow)和退火等熱處理（thermal treatinent)中使用 的熱處理裝置(furnace)等半導體裝置中有效使用的技術。 發明背景 在1C的製造方法中，在對晶片實施成膜處理和擴散處 理4，廣泛使用著間歇式直立型的熱壁型擴散CVD裝置。 一般，間歇式直立型的熱壁型擴散CVD裝置（以下稱作 CVD裝置）具備：反應管，由形成送入晶片的處理室的内管 和包圍该内官的外管構成，設置成直立型；晶舟，保持作 爲被處理基板的多片晶片，並送入到内管的處理室中；氣 體導入管’將原料氣體導人到内管内；排氣f，將反應管 内排氣；加熱器單元，設在反應管外，將反應管内加熱。 並且，在通過晶舟將多片晶片沿垂直方向排列並保持 的狀態下，從下端的爐口送入（晶舟裝載）到内管内之後，將 原料氣體從諸導人管導人到内管内，並且反應管内通過 20 力口熱态單元被加熱。由此，將CVD 汽施擴散處理。 膜沈積在晶片上 而且 在以往的這種CVD裝置中，作爲加埶 亓月士， …、攻置的加熱器單 /、有如下結構，即具備：隔熱壁體，使用氧化紹或二氡 妙等隔熱材料’通過真空形成(真空吸附形成)法形成整體 覆盖反應管的長圓筒形狀;發熱體，使用鐵鉻鋁恥〜 A1)合金或二矽化鉬（M〇si2)而形成得較長大；以及殼體，t 蓋隔熱壁體；並且，發熱體被設在隔熱壁體的内周上。後 在這樣的加熱器單元中，在實施例如3〇χ：/分以上的魚 速加熱的情況下’爲了加大發熱有效面積而使用形成爲: 狀的發熱體。 並且，在使用該板狀的發熱體的情況下，用於對該笋 熱體通電的供電部如下所述地構成。 將板狀的發熱體的兩端部在厚度方向上彎曲成直角而 分別形成一對供電部，該一對供電部貫通隔熱壁體，再將 該供雪部的貫通部彎曲成直角，在該彎曲部上連接供電端 子。爲了防止該一對供電部因發熱時的熱膨脹而翹曲，被 絕緣子保持。例如參照專利文獻i。 專利文獻1:日本特開2004—39967號公報 在上述的發熱體的保持構造體中，由於越窄有利於加 熱分佈’所以發熱體的一對供電部的間隔大多設定得較窄。 但是’如果將發熱體的一對供電部的間隔設定得較 窄，則發熱體的兩端成爲接近的狀態。 另一方面，如果發熱體的溫度上升，則會因熱膨脹而 1308364The present invention relates to a holding structure for a heat generating body, an insulating structure, a heating device, and a substrate processing device, and particularly relates to a technique for holding a heat generating body to a power feeding portion, for example, a semiconductor integrated circuit device (hereinafter referred to as an IC) is incorporated. A semiconductor wafer (hereinafter referred to as a wafer) on which an insulating film, a metal film, and a semiconductor film are deposited, an oxide film forming device, a diffusing device, and a carrier activation and planarization after ion implantation are performed. A technique that is effectively used in a semiconductor device such as a heat treatment device used for reflow or thermal treatment in thermal treatment. Background of the Invention In the 1C manufacturing method, a batch type upright type hot wall type diffusion CVD apparatus is widely used for performing a film forming process and a diffusion process 4 on a wafer. In general, a batch type upright type hot wall type diffusion CVD apparatus (hereinafter referred to as a CVD apparatus) includes a reaction tube which is formed of an inner tube forming a processing chamber for feeding a wafer and an outer tube surrounding the inner portion, and is provided in an upright type. a wafer boat holding a plurality of wafers as substrates to be processed and feeding them into a processing chamber of the inner tube; the gas introduction tube 'inducing the raw material gas into the inner tube; exhausting f to exhaust the inside of the reaction tube; The unit is disposed outside the reaction tube and heats the inside of the reaction tube. Further, in a state where the plurality of wafers are arranged and held in the vertical direction by the boat, the raw material gas is guided from the guide tubes into the inner tube after being fed into the inner tube from the lower end of the furnace port. And the reaction tube is heated by a 20-port hot state unit. Thereby, the CVD vapor deposition treatment is performed. The film is deposited on a wafer, and in the conventional CVD apparatus, as a heating furnace, the heater unit has the following structure, that is, the heat insulating wall body is used, and the oxidation furnace or the second layer is used. The heat insulating material 'is formed by a vacuum forming (vacuum adsorption forming) method to form a long cylindrical shape integrally covering the reaction tube; the heating element is formed longer by using an iron chromium aluminum shame~ A1) alloy or a molybdenum molybdenum (M〇si2); And a housing, the t cover heat insulating wall body; and the heat generating body is disposed on the inner circumference of the heat insulating wall body. In the above-described heater unit, when the fish heating is performed at a speed of, for example, 3 〇χ:/min or more, the heat generating body formed into a shape is used in order to increase the heat-generating effective area. Further, when the plate-shaped heat generating body is used, the power supply unit for energizing the heat generating body is configured as follows. The both end portions of the plate-shaped heat generating body are bent at right angles in the thickness direction to form a pair of power supply portions, and the pair of power supply portions penetrate the heat insulating wall body, and the through portion of the snow supply portion is bent at a right angle. A power supply terminal is connected to the bent portion. In order to prevent the pair of power supply portions from being warped due to thermal expansion during heat generation, they are held by the insulator. For example, refer to Patent Document i. In the above-described holding structure of the heat generating body, the narrower distribution is advantageous for the heating distribution. Therefore, the interval between the pair of feeding portions of the heating element is often set to be narrow. However, when the interval between the pair of power supply portions of the heat generating body is set to be narrow, both ends of the heat generating body are brought into a close state. On the other hand, if the temperature of the heating element rises, it will expand due to thermal expansion.
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伸長。此外，如果發熱體長時間使用，也有伸長的趨勢。 並且，如果發熱體伸長，則發熱體的兩端的間隔變窄， 所以發熱體的一對供電部的間隔變窄，最終接觸，由此會 發生電氣短路、或在溫度較高的情況下相互熔接。 【發明内容】 發明揭示 發明欲解決之問題 本發明的目的是，提供一種能夠防止發熱體的短路或 熔接合、延長發熱體壽命的發熱體的保持構造體。 本發明的第二目的是，提供一種能夠防止發熱體的短 路或熔接、延長發熱體壽命的絕緣構造體。 本發明的第三目的是，提供一種能夠防止發熱體的短 路或熔接、延長發熱體壽命的加熱裝置。 本發明的第四目的是，提供一種能夠防止發熱體的短 路或熔接、延長發熱體壽命的基板處理裝置。 解決問題之方法 用於解決上述課題的手段中的具有代表性的技術方案 如下。 (1) 一種發熱體的保持構造體，用於基板處理裝置，其 20 具有： 隔熱壁體，形成爲圓筒形狀； 發熱體，具有沿著該隔熱壁體的内周側設置成圓筒狀 的圓筒部、和貫通上述隔熱壁體地設在該圓筒部的端部的 一對供電部； •1308364 絕緣子，至少其一部分設在上述一對供電部之間，並 且另一部分設置成越過上述圓筒部的内周面而到達圓筒部 的内側。elongation. In addition, if the heating element is used for a long time, there is also a tendency to stretch. Further, when the heating element is elongated, the interval between the both ends of the heating element is narrowed, so that the interval between the pair of feeding portions of the heating element is narrowed, and eventually the contact occurs, thereby causing an electrical short circuit or welding at a high temperature. . Disclosure of the Invention Problems to be Solved by the Invention An object of the present invention is to provide a holding structure for a heat generating body which can prevent short-circuiting or fusion bonding of a heat generating body and prolong the life of the heat generating body. A second object of the present invention is to provide an insulating structure capable of preventing short-circuiting or welding of a heat generating body and extending the life of the heat generating body. A third object of the present invention is to provide a heating device capable of preventing short-circuiting or welding of a heat generating body and extending the life of the heat generating body. A fourth object of the present invention is to provide a substrate processing apparatus capable of preventing short-circuiting or welding of a heat generating body and extending the life of the heat generating body. Means for Solving the Problems A typical technical solution for solving the above problems is as follows. (1) A heating structure holding structure for a substrate processing apparatus, comprising: a heat insulating wall body formed in a cylindrical shape; and a heat generating body having a circle along an inner circumferential side of the heat insulating wall body a cylindrical cylindrical portion and a pair of power supply portions provided at an end portion of the cylindrical portion through the heat insulating wall body; • 1308364 insulators, at least a part of which is disposed between the pair of power supply portions, and another portion It is provided so as to pass over the inner circumferential surface of the cylindrical portion and reach the inner side of the cylindrical portion.
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(2) —種絕緣構造體，用於基板處理裝置的加熱裝置的 發熱體具有圓筒形狀的圓筒部和在該圓筒部的端部設置的 一對供電部，該絕緣構造體用於將上述一對供電部之間隔 離，其具有隔壁部，該隔壁部從上述一對供電部之間開始 並越過上述圓筒部的圓周面上的位置後到達上述圓筒部的 内側，將上述一對供電部之間隔離。 (3) —種絕緣構造體，用於基板處理裝置的加熱裝置的 發熱體具有圓筒形狀的圓筒部和在該圓筒部的端部設置的 一對供電部，該絕緣構造體用於將上述一對供電部之間隔 離，其具有隔壁部，該隔壁部從上述一對供電部之間開始 到達上述圓筒部的圓周面上的位置，將上述一對供電部之 間隔離。 (4) 一種絕緣構造體，用於基板處理裝置的加熱裝置的 發熱體具有圓筒形狀的圓筒部和在該圓筒部的端部設置的 一對供電部，該絕緣構造體用於將上述一對供電部之間隔 離，其中， 該絕緣構造體被設置在上述隔熱壁體的外側，將上述 一對供電部間隔離，上述供電部貫通形成在上述圓筒部的 外周側的隔熱壁體而設置。 (5) —種絕緣構造體，用於基板處理裝置的加熱裝置的 發熱體具有圓筒形狀的圓筒部和在該圓筒部的端部設置的 20 1308364 一對供電部，該一對供電部貫通將形成在上述圓筒部的外 周側的隔熱壁體貫通而設置，該絕緣構造體被設置在上述 隔熱壁體的内側或外側，將上述一對供電部間隔離，其中， 具有比上述隔熱壁體大的硬度、彎曲強度或密度。 (6)—種加熱裝置，具有上述(1)〜(5)中任一種絕緣構 造體。 (7) —種基板處理裝置，(2) An insulating structure in which a heating element for a heating device of a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at an end portion of the cylindrical portion, the insulating structure being used for The pair of power supply portions are separated from each other, and have a partition wall portion that reaches the inner side of the cylindrical portion from a position on the circumferential surface of the cylindrical portion from between the pair of power supply portions The pair of power supply parts are isolated. (3) An insulating structure in which a heating element for a heating device of a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at an end portion of the cylindrical portion, the insulating structure being used for The pair of power supply portions are isolated from each other, and have partition walls that are separated from the pair of power supply portions to a position on a circumferential surface of the cylindrical portion to isolate the pair of power supply portions. (4) An insulating structure in which a heating element for a heating device of a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at an end portion of the cylindrical portion, the insulating structural body being used for The pair of power supply portions are isolated from each other, and the insulating structure is disposed outside the heat insulating wall body to isolate the pair of power supply portions, and the power supply portion is formed to penetrate the outer peripheral side of the cylindrical portion. Set up with a hot wall. (5) An insulating structure in which a heating element for a heating device of a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions 20 1308364 provided at an end portion of the cylindrical portion, the pair of power supplies The heat insulating wall body formed on the outer peripheral side of the cylindrical portion penetrates and is provided, and the insulating structural body is provided inside or outside the heat insulating wall body to isolate the pair of power feeding portions. Greater hardness, bending strength or density than the above-mentioned insulating wall. (6) A heating device comprising the insulating structure of any one of the above (1) to (5). (7) a substrate processing device,
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具有上述(6)的加熱裝置； 具備：處理室’被該加熱裝置加熱，處理被處理基板； 導入管’將氣體導入到上述處理室中；排氣管，將上述處 理室排氣。The heating device according to (6) above, wherein the processing chamber is heated by the heating device to process the substrate to be processed, the introduction pipe is introduced into the processing chamber, and the exhaust pipe exhausts the processing chamber.
C實施方式J 較佳實施例之詳細說明 以下，參照附圖說明本發明的一實施方式。 在本實施方式中’本發明涉及的發熱體的保持構造體 在設置於作爲本發明涉及的基板處理裝置的一實施方式的 CVD裝置（間歇式直立型的熱壁型擴散cVE)裝置）中的本發 明涉及的加熱裝置的一實施方式的加熱器單元中使用。 作爲本發明的基板處理裝置的一實施方式的CVD裝置 20 如第1圖所示，具備垂直配設並被固定地支撐的直立型的反 應管11，反應管11包括外管12和内管13。 外管12使用石英(Si〇2)而一體成形爲圓筒形狀，内管13 使用石英(Si〇2)或碳化矽(SiC) 一體成形爲圓筒形狀。 外管12形成爲其内徑比内管13的外徑大、上端封閉而 9 1308364 下端開口的圓筒形狀’呈同心圓地覆蓋内管13，包圍内管 13的外側。 内管13形成爲上下兩端開口的圓筒形狀，内管13的筒 中空部形成多片晶片被送入的處理室14，該多片晶片通過 5晶舟22被保持成沿垂直方向排列的狀態。内管13的下端開 口構成用於送入送出晶片的爐口 15。C. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, the holding structure of the heat generating body according to the present invention is provided in a CVD apparatus (intermittent upright type hot wall type diffusion cVE) apparatus which is an embodiment of the substrate processing apparatus according to the present invention. The heater unit according to an embodiment of the heating device according to the present invention is used. As shown in Fig. 1, the CVD apparatus 20 as one embodiment of the substrate processing apparatus of the present invention includes an upright type reaction tube 11 that is vertically disposed and fixedly supported, and the reaction tube 11 includes an outer tube 12 and an inner tube 13 . The outer tube 12 is integrally formed into a cylindrical shape using quartz (Si〇2), and the inner tube 13 is integrally formed into a cylindrical shape using quartz (Si〇2) or tantalum carbide (SiC). The outer tube 12 is formed such that its inner diameter is larger than the outer diameter of the inner tube 13, and the upper end is closed, and the cylindrical shape of the lower end of the opening 1 9308364 covers the inner tube 13 concentrically, surrounding the outer side of the inner tube 13. The inner tube 13 is formed in a cylindrical shape in which both upper and lower ends are open, and the hollow portion of the inner tube 13 forms a processing chamber 14 into which a plurality of wafers are fed, and the plurality of wafers are held by the crystal boat 22 in a vertical direction. status. The lower end opening of the inner tube 13 constitutes a furnace opening 15 for feeding and feeding the wafer.
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外管12與内管13之間的下端部由形成爲圓環形狀的岐 管16氣密封閉，爲了進行内管13和外管12的更換等，岐管 16分別拆裝自如地被安裝在内管13及外管12上。 通過岐管16被支撐在CVD裝置的加熱器基座19上，反 應管11成爲垂直裝配的狀態。 在岐管16的側壁的上部連接著排氣管π，排氣管17構 成爲，與排氣裝置（未圖示）連接，能夠將處理室14真空排氣 成規定的真空度。排氣管17成爲與形成在外管12和内管13 之間的間隙連通的狀態，由外管12和内管13的間隙構成排 氣通路18。排氣通路18的橫截面形狀爲一定寬度的圓環形 狀。 由於排氣管17與岐管16連接，所以排氣管17成爲被配 置在形成圓筒形狀的中空體、並沿垂直方向較長地形成的 20排氣通路18的最下端的狀態。 在岐管16上，從垂直方向下側抵接著閉塞下端開口的 密封蓋20 °密封蓋2〇形成爲具有與外管12的外徑大致相等 的直徑的圓盤形狀，可通過設置在反應管丨丨外部的晶舟升 降機21(僅圖示了一部分)在垂直方向上升降。 10 1308364The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 formed in a ring shape, and the manifold 16 is detachably mounted in order to replace the inner tube 13 and the outer tube 12, respectively. The inner tube 13 and the outer tube 12 are on. The manifold 16 is supported by the heater base 19 of the CVD apparatus, and the reaction tube 11 is vertically assembled. An exhaust pipe π is connected to an upper portion of the side wall of the manifold 16, and the exhaust pipe 17 is connected to an exhaust device (not shown) to evacuate the processing chamber 14 to a predetermined degree of vacuum. The exhaust pipe 17 is in a state of communicating with the gap formed between the outer pipe 12 and the inner pipe 13, and the exhaust passage 18 is constituted by the gap between the outer pipe 12 and the inner pipe 13. The cross-sectional shape of the exhaust passage 18 is a circular shape having a certain width. Since the exhaust pipe 17 is connected to the manifold 16, the exhaust pipe 17 is in a state of being disposed at the lowermost end of the exhaust passage 18 which is formed in a hollow hollow body and formed in the vertical direction. On the manifold 16, the sealing cover 20 that abuts the lower end opening from the lower side in the vertical direction is formed into a disc shape having a diameter substantially equal to the outer diameter of the outer tube 12, and can be disposed in the reaction tube. The outer boat elevator 21 (only a part of which is shown) is raised and lowered in the vertical direction. 10 1308364
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20 在密封蓋20的中心線上垂直地豎立並支撐著用於保持 作爲被處理基板的晶片1的晶舟22。 晶舟22能夠使多片晶片1以水平且相互中心對齊的狀 態排列並保持。 在密封蓋20上連接著氣體導入管23，該氣體導入管23 與内管13的爐口 15連通，在氣體導入管23上連接著原料氣 體裝置和載體氣體供給裝置（都未圖示）。從氣體導入管23 被導入到爐口 15的氣體，在内管13的處理室14内流通，通 過排氣通路18後從排氣管17排放。 在外管12的外部，加熱反應管11的内部的、作爲本實 施方式涉及的加熱裝置的加熱器單元30，包圍著外管12的 周圍並以同心圓設置著。 加熱器單元30具備使用不銹鋼（SUS)並形成爲上端閉 塞下端開口的圓筒形狀的殼體31，殼體31的内徑及全長設 定爲比外管12的外徑及全長大。 在殼體31的内部，與外管12同心圓地設置有比外管12 的外徑大的圓筒形狀的隔熱壁體33。隔熱壁體33與殼體31 的内周面之間的間隙32是用於氣冷的空間。 隔熱壁體33具備：圓盤形狀的頂壁部34，具有比殼體 31的内徑小的外徑；以及圓筒形狀的側壁部35，具有比外 管12的外徑大的内徑和比殼體31的内徑小的外徑。 頂壁部34覆蓋側壁部35上端的開口而將其封閉，頂壁 部34的上端面被設置成與殼體35的頂壁的下表面接觸。 另外，也可以構成爲，設置貫通頂壁部34及殼體31的 11 1308364 頂壁的排氣口，使隔熱壁體33與外管12之間的環境氣體強 制風冷。 通過將側壁部35的外徑設定得比殼體31的内徑小，在 側壁部35與殼體31之間形成作爲風冷空間的間隙。 520 A wafer boat 22 for holding the wafer 1 as a substrate to be processed is vertically erected and supported on the center line of the sealing cover 20. The wafer boat 22 is capable of arranging and holding a plurality of wafers 1 in a state of being horizontally and center-aligned with each other. A gas introduction pipe 23 is connected to the seal cap 20, and the gas introduction pipe 23 communicates with the furnace port 15 of the inner pipe 13, and a raw material gas device and a carrier gas supply device (both not shown) are connected to the gas introduction pipe 23. The gas introduced into the furnace port 15 from the gas introduction pipe 23 flows through the processing chamber 14 of the inner pipe 13, passes through the exhaust passage 18, and is discharged from the exhaust pipe 17. On the outside of the outer tube 12, the heater unit 30, which is a heating device according to the present embodiment, which heats the inside of the reaction tube 11, surrounds the periphery of the outer tube 12 and is disposed concentrically. The heater unit 30 is provided with a cylindrical casing 31 which is formed of a stainless steel (SUS) and has an upper end closed at its lower end. The inner diameter and the overall length of the casing 31 are set to be larger than the outer diameter and the total length of the outer tube 12. Inside the casing 31, a cylindrical heat insulating wall body 33 having a larger outer diameter than the outer pipe 12 is provided concentrically with the outer pipe 12. The gap 32 between the heat insulating wall 33 and the inner peripheral surface of the casing 31 is a space for air cooling. The heat insulating wall body 33 includes a disk-shaped top wall portion 34 having an outer diameter smaller than the inner diameter of the casing 31, and a cylindrical side wall portion 35 having an inner diameter larger than the outer diameter of the outer tube 12. And an outer diameter smaller than the inner diameter of the casing 31. The top wall portion 34 covers the opening at the upper end of the side wall portion 35 to close it, and the upper end surface of the top wall portion 34 is provided in contact with the lower surface of the top wall of the casing 35. Further, an exhaust port penetrating the top wall portion 34 and the top wall of the 11 1308364 of the casing 31 may be provided to force the ambient gas between the heat insulating wall body 33 and the outer pipe 12 to be air-cooled. By setting the outer diameter of the side wall portion 35 to be smaller than the inner diameter of the casing 31, a gap as an air-cooling space is formed between the side wall portion 35 and the casing 31. 5
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20 另外，也可以構成爲，在隔熱壁體33的側壁部幻設置 貫通孔，以使間隙32、隔熱壁體33和外管12之間的空間貫 通’並且，使隔熱㈣33與外管12之間的環境氣體強制風 冷。 並且，隔熱壁體33的側壁部35通過在垂直方向上層疊 多個隔熱塊36而構築爲一個筒體。 如第1及2圖所示，隔熱塊36具備較短的圓筒形狀的環 形的主體37 ’主體37採雜_或球㈣氧化料二氧化 石夕等還具有絕緣材功能的隔熱材料，通過真空形成法一體 成形。 另外，隔熱塊36及主體37也可以在沿圓筒形狀的圓周 方向分割成多個、例如以規定的角度將圓筒形狀分割成多 個的狀態下成形，然後組裝成圓筒形狀。 如果這樣，因爲在隔熱塊36中也形成遊隙（易動度），所 以即使向隔熱塊36施加了應力也難以分開。優選的是，如 果進行四分割，則在尺寸方面也較好。 在主體37的下端部，以將主體37内周的-部分切開成 圓環形狀的狀祕成有結合凸部％。在域π的上端部， 以將主體37外周的-部分切開成圓環形狀的狀態形成有結 合凹部39。 12 1308364 此外，在主體37上端的内周側形成有向内側方向突出 的突出部37a(參照第3(c)圖）。 相部的上下的隔熱塊36的突出部37a之間，以一定的 深度、―金沾^ 疋的而度形成有用於安裝發熱體的安裝槽（四 邛)4 〇 ’以使其成爲將側壁部3 5的内周面切開成圓環形狀的 狀恶。對於各個隔熱塊36各形成有一個安裝槽40，成爲〜 個封閉的圓形。Further, a through hole may be formed in the side wall portion of the heat insulating wall body 33 so that the space between the gap 32 and the heat insulating wall body 33 and the outer tube 12 is penetrated and the heat insulating (four) 33 and the outer portion are provided. The ambient gas between the tubes 12 is forced to air cool. Further, the side wall portion 35 of the heat insulating wall body 33 is constructed as a single cylinder by laminating a plurality of heat insulating blocks 36 in the vertical direction. As shown in Figs. 1 and 2, the heat insulating block 36 is provided with a short cylindrical main body 37. The main body 37 is made of _ or ball (four) oxidized material, such as cerium oxide, and the insulating material having an insulating material function. It is integrally formed by a vacuum forming method. Further, the heat insulating block 36 and the main body 37 may be formed by being divided into a plurality of cylindrical shapes in a circumferential direction, for example, in a state in which the cylindrical shape is divided into a plurality of pieces at a predetermined angle, and then assembled into a cylindrical shape. If so, since the play (movability) is also formed in the heat insulating block 36, it is difficult to separate even if stress is applied to the heat insulating block 36. Preferably, if four divisions are performed, it is also preferable in terms of size. At the lower end portion of the main body 37, a portion of the inner circumference of the main body 37 is cut into a ring shape to form a joint convex portion %. At the upper end portion of the field π, a joint recess 39 is formed in a state in which the outer portion of the main body 37 is cut into a circular ring shape. Further, a projection portion 37a that protrudes inward is formed on the inner peripheral side of the upper end of the main body 37 (see Fig. 3(c)). Between the protruding portions 37a of the upper and lower heat insulating blocks 36 of the phase portion, a mounting groove (four turns) 4 〇' for mounting the heat generating body is formed at a constant depth and with a thickness of gold. The inner peripheral surface of the side wall portion 35 is cut into a ring-shaped shape. Each of the heat insulating blocks 36 is formed with one mounting groove 40, which is a closed circular shape.
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20 在安裝槽40的内周面，如第3(b)圖所示，沿周向大致等 間1^也安裝有多個用於將發熱體定位保持的U字針形狀的 保持用具41。 在發熱體42中採用Fe — Cr — A1合金或MoSh及SiC等電 阻發熱材料。發熱體42如第3(a)圖所示，爲波浪形的平板形 狀此外’上側波部42a和上侧間隙43a、及下側波部42b和 下側間隙43b分別交替地形成 。它們通過衝壓加工或鐳射切 割加工等一體成形。 發熱體42沿著隔熱塊36的内周設置成圓環形狀。發熱 體42所形成的圓環形狀的外徑比隔熱塊36的安裝槽40的内 徑（内周面的直徑）小一些。 如上所述，形成了呈圓環形狀的發熱體42的圓筒部51。 如第1〜3圖所示，發熱體42的圓筒部51被設置在隔熱 塊36的每個安裝槽4〇中。在其上下段隔離地設置著相鄰的 其他發熱體42的圓筒部51。 如第3(a)、3(b)圖所示’多個保持用具41、41被配置在 從上側間隙43a的下端到下側間隙43b的上端的位置，並插 13 1308364 入隔熱塊36中。這樣，以從安裝槽侧内周面離開的狀態 保持發熱體42。 如第2及3圖所示，在發熱體42的圓筒部51的兩端部 44、44，-對供電部45、46分別與圓環形狀的圓周方向呈 直角、且向半徑方向外側彎曲地形成。在—對供電部幻、 46的前端部，一對連接部47、48分別與供電部45 '牝呈直 角地彎曲而形成’且相互爲相反方向。In the inner peripheral surface of the mounting groove 40, as shown in Fig. 3(b), a plurality of holders 41 of a U-shaped needle shape for holding and holding the heat generating body are also mounted in the circumferential direction. A heat-generating material such as Fe-Cr-Al alloy or MoSh or SiC is used in the heating element 42. As shown in Fig. 3(a), the heating element 42 has a wavy flat plate shape, and the upper side wave portion 42a and the upper side gap portion 43a, and the lower side wave portion 42b and the lower side gap portion 43b are alternately formed. They are integrally formed by press working or laser cutting. The heating element 42 is provided in a circular ring shape along the inner circumference of the heat insulating block 36. The outer diameter of the annular shape formed by the heat generating body 42 is smaller than the inner diameter (diameter of the inner peripheral surface) of the mounting groove 40 of the heat insulating block 36. As described above, the cylindrical portion 51 of the heat generating body 42 having an annular shape is formed. As shown in Figs. 1 to 3, the cylindrical portion 51 of the heat generating body 42 is provided in each of the mounting grooves 4 of the heat insulating block 36. The cylindrical portion 51 of the adjacent other heat generating body 42 is provided in isolation in the upper and lower sections. As shown in the third (a) and third (b) diagrams, the plurality of holding tools 41 and 41 are disposed at a position from the lower end of the upper side gap 43a to the upper end of the lower side gap 43b, and the plugs 13 1308364 are inserted into the heat insulating block 36. in. Thus, the heat generating body 42 is held in a state of being separated from the inner peripheral surface of the mounting groove side. As shown in the second and third figures, the both end portions 44 and 44 of the cylindrical portion 51 of the heating element 42 are bent at right angles to the circumferential direction of the annular shape and bent outward in the radial direction. Ground formation. At the front end portion of the power supply portion phantom 46, the pair of connecting portions 47, 48 are bent at right angles to the power supply portion 45', respectively, and are formed in opposite directions.
10 爲了抑制一對供電部45、46的發熱量的降低，一對供 電部45、46的間隔設定得較小。 優選的是，將-對供電部45、46從圓環形狀的圓周方 向朝半徑方向外側的分別彎曲成直角的部位，設爲發熱體 42的上側波部42a的最上部附近或下侧波部42b的最下部附 近。 通過這樣，能夠進一步沒有間隙地將發熱體鋪設在一 I5對供電部45、46上。In order to suppress a decrease in the amount of heat generated by the pair of power supply portions 45 and 46, the interval between the pair of power supply portions 45 and 46 is set to be small. Preferably, the portion of the upper side wave portion 42a of the heating element 42 is bent at a right angle from the circumferential direction of the annular shape to the outer side in the radial direction, and the lower portion or the lower side portion of the upper wave portion 42a of the heating element 42 is formed. Near the lowermost part of 42b. Thus, the heat generating body can be laid on the I5 pair power supply portions 45, 46 without any gap.
20 在與—對供電部45、46的位置對應的圓筒形狀的隔熱 塊36上，分別形成有一對插通槽49、50。兩個插通槽49、 5〇k女裝槽4〇側沿圓筒形狀的徑向達到主體37的外周側而 开y成兩個供電部45、46分別插通在兩個插通槽49、50中。 另外’兩個插通槽49、50也可以是，在插通兩個供電 部45、46之前’包含兩個插通槽49、50之間在内，兩個插 通槽49、50形成爲一個插通槽，在插通兩個供電部45、46 後’通過在兩個供電部45、46間埋設纖維狀或球狀的氧化 铭或一氧化秒等還具有絕緣材功能的隔熱材料，來形成隔 14 l3〇8364 熱壁體33及插通槽49、50。A pair of insertion grooves 49, 50 are formed in each of the cylindrical heat insulating blocks 36 corresponding to the positions of the power supply portions 45, 46. The two insertion grooves 49, 5〇k women's groove 4〇 side reach the outer peripheral side of the main body 37 in the radial direction of the cylindrical shape, and the two power supply portions 45 and 46 are respectively inserted into the two insertion grooves 49. 50. In addition, the two insertion grooves 49 and 50 may be formed to include between the two insertion grooves 49 and 50 before the two power supply portions 45 and 46 are inserted, and the two insertion grooves 49 and 50 are formed as An insertion groove, after inserting the two power supply portions 45, 46, by embedding a fibrous or spherical oxidized or oxidized second insulating material having an insulating material function between the two power supply portions 45, 46 To form the 14 l3〇8364 hot wall body 33 and the insertion grooves 49, 50.
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在主體37的外周面的兩個插通槽49、50部分，設有絕 緣構造體的一例、即作爲外側絕緣部件的絕緣子（以下，稱 作外側絕緣子)52。 外側絕緣子52疋絕緣構造體的一例，使用氧化紹或二 氣化矽等具有耐熱性的作爲絕緣材料的陶瓷，通過燒結法 等適當制法，能夠使硬度、彎曲強度及密度比隔熱塊3 6高。 如第4(a)圖所示，外側絕緣子52爲大致正方形，一體成 形爲具有一點曲面R1的平盤形狀，並被固定在主體37的外 周面上，該曲面R1與隔熱塊36的外周面的曲面對應。 外側絕緣子52具有至少與隔熱塊36同等以上的硬度、 同等以上的彎曲強度及同等以上的密度。 另外，優選的是，如果外側絕緣子52的硬度比隔熱塊 36的硬度咼，則能夠有效地抑制發熱體42的翹曲。 此外，優選的是，如果外側絕緣子52的彎曲強度及/或 密度比隔熱塊36的彎曲強度及/或密度高，贱夠有效地抑 制發熱體42的翹曲。 在外側絕緣子52的上部，分別形成有用於插通一對供 電部的作爲插通部的一對保持槽53、54。兩個保持槽幻、 2〇 54的位置對應於兩個插通槽49、5〇的位置，大體爲相同位 置。在兩個保持槽53、54中分別插通並保持著插通在兩個 插通槽49、50中的兩個供電部45、46。 優選的是，如第4(a)圖所示，保持槽53、54可以切開到 外側絕緣子52的最上部而形成。這是因爲，在設 且】 對 15 .1308364 供包部後’能夠安裝、更換外側絕緣子52。但是，保持槽 53、54也可以;ί；切開到外側絕緣子渴最上部，而是形成 孔狀。 / $過外舰緣子52的兩個保持槽53、54保持發熱體42 5的供電部45、46，能夠抑制發熱體42的赵曲。兩個保持槽 . 53、54的間隔對應於主體37的兩個插通槽49、5〇的間隔， 爲相同的間隔。 這裏，所谓的發熱體42的翹曲，是指通過對發熱體42 供電而使發熱體42發生熱膨脹、或通過停止供電而發生熱 1〇收縮，從原來配置的位置偏移、或移動、或扭轉而運動的 狀態。 在安裝槽40的内周面的對應於兩個插通槽49、5〇的部 位’抵接m疋有絕緣構造體的—例即作爲内側絕緣部件的 絕緣子（以下，稱作内側絕緣子)55。 15An example of an insulating structure, that is, an insulator (hereinafter referred to as an outer insulator) 52 as an outer insulating member is provided in the two insertion grooves 49 and 50 on the outer peripheral surface of the main body 37. In an example of the outer insulator 52 疋 insulating structure, a ceramic having heat resistance such as oxidized or bismuth hydride is used as an insulating material, and a hardness, a bending strength, and a density ratio can be made by a suitable method such as a sintering method. 6 high. As shown in Fig. 4(a), the outer insulator 52 is substantially square, integrally formed into a flat disk shape having a point curved surface R1, and is fixed to the outer peripheral surface of the main body 37, the curved surface R1 and the outer periphery of the heat insulating block 36. The surface of the face corresponds. The outer insulator 52 has a hardness equal to or higher than the heat insulating block 36, a bending strength equal to or higher than the same, and a density equal to or higher than the same. Further, it is preferable that if the hardness of the outer insulator 52 is smaller than the hardness of the heat insulating block 36, the warpage of the heat generating body 42 can be effectively suppressed. Further, it is preferable that if the bending strength and/or density of the outer insulator 52 is higher than the bending strength and/or density of the heat insulating block 36, the warpage of the heat generating body 42 is effectively suppressed. In the upper portion of the outer insulator 52, a pair of holding grooves 53, 54 as insertion portions for inserting a pair of power supply portions are formed, respectively. The positions of the two holding grooves, 2〇54, correspond to the positions of the two insertion grooves 49, 5〇, which are substantially the same position. Two power supply portions 45, 46 that are inserted into the two insertion grooves 49, 50 are inserted and held in the two holding grooves 53, 54 respectively. Preferably, as shown in Fig. 4(a), the holding grooves 53, 54 can be formed by cutting to the uppermost portion of the outer insulator 52. This is because the outer insulator 52 can be attached and replaced after the supply of the 15 .1308364 supply portion. However, the retaining grooves 53, 54 may also be cut into the uppermost portion of the outer insulator, but formed into a hole shape. The two holding grooves 53, 54 of the outer ship flange 52 hold the power supply portions 45, 46 of the heat generating body 42 5, and the curvature of the heat generating body 42 can be suppressed. The spacing of the two holding grooves 53 and 54 corresponds to the interval of the two insertion grooves 49, 5〇 of the main body 37, and is the same interval. Here, the warpage of the heating element 42 means that the heating element 42 is thermally expanded by supplying power to the heating element 42 or is thermally contracted by stopping the supply of power, and is displaced or moved from the originally disposed position, or The state of twisting and moving. In the portion of the inner circumferential surface of the mounting groove 40 corresponding to the two insertion grooves 49 and 5, the insulator of the inner insulating member (hereinafter referred to as the inner insulator) 55 is in contact with the insulating structure. . 15
20 内側絕緣子55是絕緣構造體的一例，使用氧化鋁或二 氧化矽等的具有耐熱性的作爲絕緣材料的陶瓷，通過燒結 法等適當制法，能硬度、彎.度及密度比隔熱塊36 高。例如，使内側絕緣子55的氧化鋁成分的含有率比隔熱 塊36高’能夠提高硬度、彎曲強度及密度。 如第4(b)圖所示，内側絕緣子55爲大致正方形，一體成 开>爲具有一點曲面R2的平盤形狀，並被固定在主體37的外 周面上，忒曲面R2與隔熱塊36的内周面的曲面相對應。 内側絕緣子55至少具備與隔熱塊36同等以上的硬度、 同等以上的彎曲強度和同等以上的密度。 16 1308364 另外，優選的是，如果使内側絕緣子55的硬度比隔熱 塊36的硬度高，則能夠有效地抑制發熱體42的翹曲。 此外’優選的是’如果使内側絕緣子55的彎曲強度及/ 或密度比隔熱塊36的彎曲強度及/或密度高，則能夠有效地 5 抑制發熱體42的翹曲。The inner insulator 55 is an example of an insulating structure, and a ceramic having heat resistance such as alumina or cerium oxide as an insulating material is used, and a hardness, a bending degree, and a density ratio insulating block can be obtained by a suitable method such as a sintering method. 36 high. For example, the content ratio of the alumina component of the inner insulator 55 is higher than that of the heat insulating block 36, and the hardness, the bending strength, and the density can be improved. As shown in Fig. 4(b), the inner insulator 55 is substantially square, and is integrally formed into a flat disk shape having a slight curved surface R2, and is fixed to the outer peripheral surface of the main body 37, and has a curved surface R2 and a heat insulating block. The curved surface of the inner peripheral surface of 36 corresponds. The inner insulator 55 has at least the same hardness as the heat insulating block 36, a bending strength equal to or higher than the same, and a density equal to or higher than the same. Further, it is preferable that if the hardness of the inner insulator 55 is made higher than the hardness of the heat insulating block 36, the warpage of the heat generating body 42 can be effectively suppressed. Further, it is preferable that the bending strength and/or the density of the inner insulator 55 is higher than the bending strength and/or density of the heat insulating block 36, so that the warpage of the heating element 42 can be effectively suppressed.
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在内側絕緣子55的上部，分別形成有用於插通一對供 電部的作爲插通部的一對保持槽56、57。兩個保持槽56、 57的位置對應於兩個插通槽49、5〇的位置，大體爲相同位 置。在兩個保持槽56、57中分別插通並保持著插通在兩個 插通槽49、50中的兩個供電部45、46。 優選的是，如第4(b)圖所示，保持槽56、57可以切開到 内側絕緣子55的最上部而形成。這是因爲，在設置了一對 供電部後，能夠安裝、更換内側絕緣子55。但是，保持槽 56、57也可以不切開到内側絕緣子55的最上部，而是形成 孔狀。 通過内側絕緣子55的兩個保持槽56、57保持發熱體42 的供電部45、46，能夠抑制發熱體42的龜曲。兩個保持槽 56、57的間隔對應主體37的兩個插通槽49、50的間隔，爲 相同的間隔。 在内側絕緣子55的内側端面（與隔熱塊36的相反側的 端面、即發熱體42的圓筒部51側的端面）上，在兩個保持槽 56、57之間，設有隔開發熱體42的一對供電部45、46及圓 筒部51的隔壁部58。隔壁部58的厚度⑴是，在其抵接於安 裝槽40的内周面上固定時，使其至少可設置到發熱體42的 17 1308364 圓筒部51的内周面上的位置。 優選的是，如第2圖所示，隔壁部58的厚度⑴可以是， 在其抵接於安裝槽40的内周面上固定時，應越過發熱體42 的圓筒部51的内周面上而設置到圓筒部51的内側^通過這 5 樣，能夠有效地隔開發熱體42的一對供電部45、46及圓筒 部5卜In the upper portion of the inner insulator 55, a pair of holding grooves 56, 57 as insertion portions for inserting a pair of power supply portions are formed, respectively. The positions of the two holding grooves 56, 57 correspond to the positions of the two insertion grooves 49, 5, which are substantially the same position. Two power supply portions 45, 46 that are inserted into the two insertion grooves 49, 50 are inserted and held in the two holding grooves 56, 57, respectively. Preferably, as shown in Fig. 4(b), the holding grooves 56, 57 can be formed by cutting to the uppermost portion of the inner insulator 55. This is because the inner insulator 55 can be attached and replaced after the pair of power supply portions are provided. However, the holding grooves 56, 57 may not be cut to the uppermost portion of the inner insulator 55, but may be formed in a hole shape. The feeding portions 45 and 46 of the heating element 42 are held by the two holding grooves 56 and 57 of the inner insulator 55, and the trembling of the heating element 42 can be suppressed. The interval between the two holding grooves 56, 57 corresponds to the interval between the two insertion grooves 49, 50 of the main body 37, and is the same interval. The inner end surface of the inner insulator 55 (the end surface on the opposite side of the heat insulating block 36, that is, the end surface on the cylindrical portion 51 side of the heat generating body 42) is provided with heat between the two holding grooves 56 and 57. The pair of power supply portions 45 and 46 of the body 42 and the partition wall portion 58 of the cylindrical portion 51. When the thickness (1) of the partition portion 58 is fixed to the inner circumferential surface of the mounting groove 40, it can be provided at least at a position on the inner circumferential surface of the cylindrical portion 51 of the heat generating body 42. Preferably, as shown in Fig. 2, the thickness (1) of the partition wall portion 58 may be such that the inner peripheral surface of the cylindrical portion 51 of the heat generating body 42 should be passed when it is fixed to the inner peripheral surface of the mounting groove 40. By providing the upper side of the cylindrical portion 51, the pair of power supply portions 45, 46 and the cylindrical portion 5 of the heat generating body 42 can be effectively separated.
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此外，隔壁部58的高度(h)是如下的尺寸(h)，即在其抵 接於安裝槽40的内周面上固定時，至少與發熱體42的板寬 度同等或以上的值。此外，隔壁部58被設置在與兩個保持 槽56、57相同高度的位置，以使其能夠將一對供電部45、 46設置在相同高度的位置，從而隔開發熱體42的一對供電 部45 、 46 。 優選的是，隔壁部58的高度⑻如第3(a)圖所示，可以 設爲在抵接於安裝槽40的内周面上設置固定時，比發熱體 42的圓筒部51的上側波部42a的最上部的高度和下側波部 42b的最下部的高度之間的值(hi)大。通過這樣，能夠有效 地隔開一對供電部45、46及圓筒部51。 隔壁部5 8從内侧絕緣子5 5的内側端面向兩側形成並設 有彎曲部R3。通過設置該彎曲部R3，能夠容易形成内側絕 20 緣子55，並且增加内側絕緣子55的強度，即使發熱體42的 圓筒部51膨脹、伸長，與隔壁部58接觸，内側絕緣子55也 不易破裂。 另外’彎曲部R3不僅可以做成曲面形狀，也可以做成 由平坦面構成的錐狀。 18 .1308364 • 如所7^ ’在上段側的發熱體42的-個連接部 ' (以下稱作正側連接部)47上焊接著供電端州，在另-個連 : 接部（以下稱作負側連接部H8上焊接著搭接線62的上端 ' °卩祕線62的下端部與下段側的發熱體42的正側連接部 ' 5 47連接。 口而下U彳的發熱體42的正側連接部47位於上段側 的發熱體42的負側連接部48的正下方附近，成爲下段側的 發熱體42的圓筒部51的兩端部44、44比上段側的發熱體42 _筒部51的兩端部44、44向周向偏移這部分距離的狀態。 1〇 搭接線62爲了將來自搭接線62表面的散熱抑制爲較 小’採用Fe-Cr-A1合金或MoSijSic^t阻發熱材料， 剖面形成爲圓形的圓棒形狀。但是，根據搭接線的電流容 — 量的情況，搭接線62也可以將剖面形成爲四邊形的角棒形 . 狀。 15Further, the height (h) of the partition portion 58 is a size (h) which is equal to or greater than the plate width of the heat generating body 42 when it is fixed to the inner peripheral surface of the mounting groove 40. Further, the partition wall portion 58 is provided at the same height as the two holding grooves 56, 57 so that the pair of power supply portions 45, 46 can be disposed at the same height position, thereby separating the pair of power supplies of the heat generating body 42. Department 45, 46. Preferably, the height (8) of the partition wall portion 58 can be set to be higher than the upper side of the cylindrical portion 51 of the heat generating body 42 when it is fixed to the inner peripheral surface of the mounting groove 40 as shown in Fig. 3(a). The value (hi) between the height of the uppermost portion of the wave portion 42a and the height of the lowermost portion of the lower side wave portion 42b is large. Thus, the pair of power supply portions 45, 46 and the cylindrical portion 51 can be effectively separated. The partition portion 58 is formed on both sides from the inner end surface of the inner insulator 55, and is provided with a bent portion R3. By providing the curved portion R3, the inner insulating edge 55 can be easily formed, and the strength of the inner insulator 55 can be increased, and even if the cylindrical portion 51 of the heating element 42 expands and contracts, the inner insulating member 55 is less likely to be broken when it comes into contact with the partition portion 58. . Further, the curved portion R3 may be formed not only in a curved shape but also in a tapered shape formed of a flat surface. 18 .1308364 • The power supply end state is welded to the connection portion 47 of the heating element 42 (hereinafter referred to as the positive side connection portion) 47 on the upper side, and the other is connected: The lower end portion of the upper end of the bonding wire 62 is welded to the negative side connecting portion H8, and the lower end portion of the hot wire 62 is connected to the positive side connecting portion '47' of the heating element 42 on the lower side. The positive side connecting portion 47 is located immediately below the negative side connecting portion 48 of the heating element 42 on the upper stage side, and the both end portions 44 and 44 of the cylindrical portion 51 of the heating element 42 on the lower side are higher than the heating element 42 on the upper side. The both end portions 44, 44 of the tubular portion 51 are offset in the circumferential direction by a portion of the distance. The 〇 lap wire 62 is used to suppress the heat dissipation from the surface of the lap wire 62 to a smaller 'Fe-Cr-A1 alloy. Or MoSijSic^t resistance heat-generating material, the cross-section is formed into a circular round bar shape. However, depending on the current capacity of the wire, the wire 62 can also be formed into a quadrangular angular bar shape. 15
如第2及5圖所示’在加熱器單元3〇的殼體31的外周面 上與供電端子51的設置場所對應的位置，覆蓋著包覆兩個 連接部47、48及搭接線62的端子殼體63，在端子殼體63的 内部填充有玻璃纖維等隔熱材料64。在端子殼體63中經由 絕緣子65插入有多個供電端子61。 接著’簡單地說明利用有關上述結構的Cvd裝置來製 造1C等半導體裝置的製造方法的成膜工序。 如第1圖所示’如果將多片薄片1裝填在晶舟22上（晶片 裝料）’則保持了多片晶片1的晶舟22被晶舟升降機21提起 而送入到處理室11中（晶舟裝載）。 19 1308364 在該狀態下’密封蓋20成爲將岐管16的下端開口密封 的狀態。 反應管11的内部通過排氣管17被真空排氣，成爲規定 的壓力（真空度）。 此外’反應管11的内部被加熱器單元30加熱，成爲規 定的温度。此時，根據溫度感測器24所檢測到的溫度資訊， 反饋控制向加熱器單元30的發熱體42的通電狀況，以使處 理室14内成爲規定的溫度分佈。 接著’晶舟22通過旋轉機構25被旋轉，由此晶片1旋轉。 接著’通過氣體導入管23將控制爲規定流量的原料氣 體向處理室14内導入。 被導入的原料氣體在處理室14内上升，從内管13的上 端開口流出到排氣通路18，然後從排氣管17被排放。 15As shown in FIGS. 2 and 5, 'the outer peripheral surface of the casing 31 of the heater unit 3A corresponds to the installation place of the power supply terminal 51, and covers the two connecting portions 47, 48 and the bonding wires 62. The terminal housing 63 is filled with a heat insulating material 64 such as glass fiber inside the terminal housing 63. A plurality of power supply terminals 61 are inserted into the terminal housing 63 via the insulator 65. Next, a film forming step of manufacturing a semiconductor device such as 1C using the Cvd device having the above configuration will be briefly described. As shown in Fig. 1, if the plurality of sheets 1 are loaded on the wafer boat 22 (wafer loading), the wafer boat 22 holding the plurality of wafers 1 is lifted by the boat elevator 21 and fed into the processing chamber 11. (Crystal loading). 19 1308364 In this state, the seal cap 20 is in a state in which the lower end opening of the manifold 16 is sealed. The inside of the reaction tube 11 is evacuated by the exhaust pipe 17 to have a predetermined pressure (degree of vacuum). Further, the inside of the reaction tube 11 is heated by the heater unit 30 to have a predetermined temperature. At this time, based on the temperature information detected by the temperature sensor 24, the energization state of the heating element 42 to the heater unit 30 is feedback-controlled so that the inside of the processing chamber 14 becomes a predetermined temperature distribution. Then, the wafer boat 22 is rotated by the rotating mechanism 25, whereby the wafer 1 is rotated. Then, the raw material gas controlled to a predetermined flow rate is introduced into the processing chamber 14 through the gas introduction pipe 23. The introduced material gas rises in the processing chamber 14, flows out from the upper end opening of the inner tube 13 to the exhaust passage 18, and is discharged from the exhaust pipe 17. 15
原料氣體在通過處理室14内時與晶片丨的表面接觸，此 時，通過熱CVD反應將薄膜沈積在晶片1的表面上。 如果經過了預先設定的處理時間，則從惰性氣體供給 源（未圖示）供給惰性氣體，處理室14内被置換爲惰性氣體， 並且使處理室14内的壓力恢復到常壓。 然後，通過晶舟升降機21使密封蓋2〇下降，將岐管16 20的下端開口，並且在將處理後的晶片1保持在晶舟22上的狀 態下，從岐管16的下端送出到反應管u的外部（晶舟卸載）。 然後’將處理後的晶片1從晶舟22中取出（晶片卸料）。 但是，加熱器單元30的發熱體42如果溫度上升，則因 熱膨脹而伸長。此外，發熱體42因長時間使用也有伸長的 20 1308364 趨勢。 例如，如第6(a)圖所示，由於發熱體42的一對供電部 45、46的間隔設定得較窄，所以如果發熱體42伸長，則一 • 對供電部45、46的間隔變窄、最終接觸，從而有可能發生 電氣短路、或在温度較高的情況下會相互熔接。 特別是，如第3(a)、3(b)圖所示，由於在供電部附近需 要設置标通槽49、50和内側絕緣子55，所以不能很好地配 置保持用具41以保持發熱體42的圓筒部51，所以發熱體42 變得容易向圓周方向伸長，所以易發生上述那樣的問題。 此外，有時保持用具41會因發熱體42的翹曲而從破裂 的隔熱塊36脫落、或向圓筒部51的圓周方向偏移。此時， 對供電部45、46的間隔變窄、最終接觸，由此，有可能 發生電氣短路、或在溫度較高時相互炼接。 - 但是，在本實施方式中，一對的供電部45、46通過外 15側絕緣子52及内側絕緣子Μ被保持成相互絕緣的狀態，並 且在内側絕緣子55上，在兩個供電部45、46之間以及比圓 筒部51靠半徑方向内侧設有隔壁部58，所以，如第6(b)圖所 示’即使在發熱體42伸長的情況下，也能夠防止一對供電 部45、46彼此及圓筒部51的接觸，能夠將發熱體42的短路 2〇 和熔接防止於未然。 根據上述實施方式，能夠得到下面的效果。 (1)通過由外側絕緣子及内側絕緣子保持發熱體的一 對供電部、並且在内側絕緣子上設置阻止兩個供電部和發 熱體的圓筒部的接觸的隔壁部’即使在發熱體伸長的情況 21 1308364 下，也能娜止-對供電部彼此及發熱義圓筒部接觸， 所以肖b將發熱體的短路及炫接防止於未然。 (2)通過將發熱體的短路及賴防止於未然，能夠延長 發熱體的壽命。 ~ 5The material gas is brought into contact with the surface of the wafer cassette while passing through the processing chamber 14, and at this time, a thin film is deposited on the surface of the wafer 1 by a thermal CVD reaction. When a predetermined processing time elapses, the inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 14 is replaced with an inert gas, and the pressure in the processing chamber 14 is returned to the normal pressure. Then, the sealing cover 2 is lowered by the boat elevator 21, the lower end of the manifold 16 20 is opened, and in the state where the processed wafer 1 is held on the boat 22, the reaction is sent from the lower end of the manifold 16 to the reaction. The outside of the tube u (boat unloading). Then, the processed wafer 1 is taken out from the wafer boat 22 (wafer discharge). However, if the temperature of the heating element 42 of the heater unit 30 rises, it expands due to thermal expansion. In addition, the heating element 42 also has an elongated tendency of 20 1308364 due to long-term use. For example, as shown in Fig. 6(a), since the interval between the pair of feeding portions 45 and 46 of the heating element 42 is set to be narrow, if the heating element 42 is extended, the interval between the feeding portions 45 and 46 is changed. Narrow, final contact, which may cause electrical shorts, or weld at high temperatures. In particular, as shown in FIGS. 3(a) and 3(b), since the mark grooves 49 and 50 and the inner insulator 55 are required to be provided in the vicinity of the power supply portion, the holding tool 41 cannot be disposed well to hold the heat generating body 42. Since the heat generating body 42 is easily elongated in the circumferential direction, the cylindrical portion 51 is liable to cause the above-described problems. Further, the holding tool 41 may be detached from the broken heat insulating block 36 or displaced in the circumferential direction of the cylindrical portion 51 due to the warpage of the heat generating body 42. At this time, the interval between the power supply portions 45 and 46 is narrowed and eventually contacted, whereby electrical short-circuiting may occur or the temperature may be mutually welded when the temperature is high. - In the present embodiment, the pair of power supply portions 45, 46 are held in a state of being insulated from each other by the outer 15 side insulator 52 and the inner insulator, and on the inner insulator 55, at the two power supply portions 45, 46. Since the partition wall portion 58 is provided on the inner side in the radial direction from the cylindrical portion 51, as shown in Fig. 6(b), even when the heat generating body 42 is extended, the pair of power supply portions 45 and 46 can be prevented. The contact between each other and the cylindrical portion 51 prevents the short-circuiting and welding of the heating element 42 from occurring. According to the above embodiment, the following effects can be obtained. (1) A pair of power supply portions that hold the heat generating body by the outer insulator and the inner insulator, and a partition wall portion that prevents contact between the two power supply portions and the cylindrical portion of the heat generating body on the inner insulator, even if the heat generating body is elongated 21 1308364, can also be Na - stop the power supply parts and the heat-resistant cylindrical part, so Xiao b will prevent the short-circuit and stun of the heating element. (2) By short-circuiting the heat generating body and preventing it, the life of the heating element can be prolonged. ~ 5
10 1510 15
20 (3)由於能夠防止#熱體伸長時㈣減的一對供電 部彼此以及圓筒部的接觸，所以同不使用本發明的情況相 比’能夠使一對供電部相互接近。結果，能夠將沒有發熱 體的供電部中的溫度降低抑制在最小限度。 另外，本發明並不限於上述實施方式，當然可以在不 脫離其主旨的範圍内進行各種改變。 例如’具有隔壁部58的内側絕緣子55既可以與構築隔 熱壁體的隔熱塊36的主體37—體地形成，也可以一體地形 成在一體型隔熱壁體33上。 隔壁部58並不限於一體地形成在内側絕緣子55上，也 可以設置在構築隔熱壁體的隔熱塊36的主體37或一體蜇的 隔熱壁體33上。 内側絕緣子55的保持槽56、57並不限於分別形成在上 側’也可以分別形成在内側絕緣子55的下側。 同樣，對於内側絕緣子52的保持槽53、54，也旅不P艮 於別形成在上側，也可以分別形成在外側絕緣子5 2的卞供J ° 即’具有隔壁部的本發明涉及的絕緣構造體，既 由與隔熱壁體分體的絕緣部件即絕緣子構成，也可以由陶 熱壁體本身構成。 本發明涉及的發熱體的保持構造體並不限於適用於 22 1308364(3) Since it is possible to prevent contact between the pair of power supply portions and the cylindrical portion when the heat body is extended (four), it is possible to bring the pair of power supply portions closer to each other than when the present invention is not used. As a result, the temperature drop in the power supply unit without the heat generating body can be minimized. The present invention is not limited to the above-described embodiments, and various changes can be made without departing from the spirit and scope of the invention. For example, the inner insulator 55 having the partition portion 58 may be formed integrally with the main body 37 of the heat insulating block 36 constituting the heat insulating wall body, or may be integrally formed on the integrated heat insulating wall body 33. The partition wall portion 58 is not limited to being integrally formed on the inner insulator 55, and may be provided on the main body 37 of the heat insulating block 36 in which the heat insulating wall body is constructed or the heat insulating wall body 33 integrally formed. The holding grooves 56, 57 of the inner insulator 55 are not limited to being formed on the upper side, respectively, and may be formed on the lower side of the inner insulator 55, respectively. Similarly, the holding grooves 53 and 54 of the inner insulator 52 may be formed on the upper side, or may be formed on the outer insulator 5 2, respectively, or the insulating structure according to the present invention having the partition wall portion. The body is composed of an insulator which is an insulating member which is separate from the heat insulating wall body, and may be composed of the ceramic wall itself. The holding structure of the heat generating body according to the present invention is not limited to apply to 22 1308364
10 1510 15
20 CVD裝置的加熱器單元中，也能夠普遍適用於氧化膜形成 裝置、擴散裝置及退火裝置的加熱器單元等所有加熱裝置。 進而，本發明涉及的加熱裝置並不限於適用於CVD裝 置中，也能夠普遍適用於氧化膜形成裝置、擴散裝置及退 火裝置等基板處理裝置。 I：圖式簡單說明3 第1圖是表示作爲本發明的一實施方式的CVD裝置的 正面剖視圖。 第2圖是表示作爲本發明的一實施方式的加熱器單元 的主要部分的平面剖視圖。 第3圖表示作爲本發明的一實施方式的發熱體的保持 構造體主要部分，第3(a)圖是從内側觀察的展開圖，第3(b) 圖是沿第3(a)圖的b-b線的剖視圖，第3(c)圖是沿第3(a)圖 的c — c線的剖視圖。 第4 (a)圖是表示作爲本發明涉及的絕緣構造體的一實 施方式的外側絕緣子的立體圖，第4(b)圖是表示該絕緣構造 體的内側絕緣子的立體圖。 第5圖是加熱器單元的立體圖。 第6圖是表示防接觸作用的各外部概略平面剖視圖，第 6(a)圖表示比較例的情況，第6(b)圖表示本實施方式的情 況。 【主要元件符號說明】 1...晶片 12...外管 11…反應管 13...内管 23 1308364The heater unit of the CVD apparatus can also be generally applied to all heating apparatuses such as an oxide film forming apparatus, a diffusing apparatus, and a heater unit of an annealing apparatus. Further, the heating device according to the present invention is not limited to being applied to a CVD apparatus, and can be generally applied to a substrate processing apparatus such as an oxide film forming apparatus, a diffusing apparatus, and an annealing apparatus. I: BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front cross-sectional view showing a CVD apparatus according to an embodiment of the present invention. Fig. 2 is a plan sectional view showing a main part of a heater unit as an embodiment of the present invention. Fig. 3 is a view showing a main part of a holding structure of a heat generating body according to an embodiment of the present invention, wherein Fig. 3(a) is a developed view as seen from the inside, and Fig. 3(b) is a view taken along line 3(a). A cross-sectional view of the bb line, and a third (c) view is a cross-sectional view taken along line c-c of the third (a) figure. Fig. 4(a) is a perspective view showing an outer insulator as an embodiment of the insulating structure according to the present invention, and Fig. 4(b) is a perspective view showing the inner insulator of the insulating structure. Figure 5 is a perspective view of the heater unit. Fig. 6 is a cross-sectional view showing the outer surface of the contact preventing action, Fig. 6(a) showing a comparative example, and Fig. 6(b) showing the present embodiment. [Description of main component symbols] 1... Wafer 12... Outer tube 11... Reaction tube 13... Inner tube 23 1308364
14.. .處理室 15···爐口 16.. .岐管 17.. .排氣管 18.. .排氣通路 19.. .加熱器基座 20.. .密封蓋 21.. .晶舟升降機 22.. .晶舟 23.. .氣體導入管 30.. .加熱器單元 31.. .殼體 32…間隙 33.. .隔熱壁體 34.. .頂壁部 35.. .側壁部 36.. .隔熱塊 37.. .主體 37a...突出部 38.. .結合凸部 39…結合凹部 40.. .安裝槽(凹部) 41.. .保持用具 42.. .發熱體 42a...上側波部 42b...下側波部 43.. .間隙 43a...上側間隙 43b...下側間隙 44.. .兩端部 45、46...供電部 47、48...連接部 49、50...插通槽 51.. .圓筒部 52.. .外側絕緣子 53'54...保持槽 55.. .内側絕緣子 56、57...保持槽 58.. .隔壁部 61.. .供電端子 62.. .搭接線 63.. .端子殼體 64.. .隔熱材料 65.. .絕緣子 R1...曲面 R2...曲面 R3···彎曲部 2414.. Processing chamber 15 · · · Furnace 16 .. . 岐 tube 17 .. . Exhaust pipe 18 .. . Exhaust passage 19 .. Heater base 20 .. . Sealing cover 21.. Crystal boat elevator 22.. Crystal boat 23.. gas introduction pipe 30.. heater unit 31.. casing 32... gap 33.. insulation wall 34.. top wall portion 35.. Side wall portion 36.. Insulation block 37.. Main body 37a... Projection portion 38.. Bonding convex portion 39... Combined recess portion 40.. Mounting groove (recessed portion) 41.. Holding tool 42.. Heat generating body 42a... upper side wave portion 42b... lower side wave portion 43.. gap 43a... upper side gap 43b... lower side gap 44.. both end portions 45, 46... power supply Portions 47, 48... connecting portions 49, 50... insertion slots 51.. cylindrical portions 52.. outer insulators 53'54... holding slots 55.. inside insulators 56, 57.. Holding groove 58.. partition wall portion 61.. power supply terminal 62.. lap wire 63.. terminal housing 64.. insulation material 65.. insulator R1... curved surface R2... Curve surface R3···bending portion 24
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| JP2005277207A JP4820137B2 (en) | 2005-09-26 | 2005-09-26 | Heating element holding structure |
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| JP (1) | JP4820137B2 (en) |
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| JP4331768B2 (en) * | 2007-02-28 | 2009-09-16 | 東京エレクトロン株式会社 | Heat treatment furnace and vertical heat treatment equipment |
| US8395096B2 (en) | 2009-02-05 | 2013-03-12 | Sandvik Thermal Process, Inc. | Precision strip heating element |
| JP5529646B2 (en) * | 2010-06-25 | 2014-06-25 | 株式会社日立国際電気 | Heating apparatus, substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
| DE202009011719U1 (en) * | 2009-08-28 | 2010-10-21 | Eugen Forschner Gmbh | Device for contacting a heatable hose |
| JP5565188B2 (en) * | 2010-08-10 | 2014-08-06 | 東京エレクトロン株式会社 | Heater device |
| JP5686467B2 (en) * | 2010-10-15 | 2015-03-18 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| JP5802052B2 (en) | 2011-05-19 | 2015-10-28 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| JP5743746B2 (en) | 2011-06-27 | 2015-07-01 | 東京エレクトロン株式会社 | Heat treatment furnace and heat treatment apparatus |
| CN103484934A (en) * | 2012-06-11 | 2014-01-01 | 绿种子材料科技股份有限公司 | Vapor deposition device and heating system thereof |
| JP7262194B2 (en) * | 2018-09-18 | 2023-04-21 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
| JP7484910B2 (en) * | 2019-06-20 | 2024-05-16 | ソニーグループ株式会社 | Thermal insulation and electronic equipment |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506389A (en) * | 1993-11-10 | 1996-04-09 | Tokyo Electron Kabushiki Kaisha | Thermal processing furnace and fabrication method thereof |
| JPH07253276A (en) * | 1994-03-16 | 1995-10-03 | Tokyo Electron Ltd | Heat treating furnace, and manufacture thereof |
| US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
| KR100682190B1 (en) * | 1999-09-07 | 2007-02-12 | 동경 엘렉트론 주식회사 | Method and apparatus for forming insulating film containing silicon oxy-nitride |
| JP3598032B2 (en) * | 1999-11-30 | 2004-12-08 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus, heat treatment method, and heat insulation unit |
| JP2001208478A (en) * | 2000-01-31 | 2001-08-03 | Tokyo Electron Ltd | Thermal processor |
| JP4267506B2 (en) | 2001-01-11 | 2009-05-27 | 株式会社日立国際電気 | Plasma processing equipment |
| JP4350322B2 (en) * | 2001-04-27 | 2009-10-21 | 株式会社日立国際電気 | Heat treatment equipment |
| JP2003213432A (en) * | 2002-01-24 | 2003-07-30 | Shinko Seiki Co Ltd | Electrode for plasma cvd apparatus |
| JP3881937B2 (en) * | 2002-07-05 | 2007-02-14 | 株式会社日立国際電気 | Semiconductor manufacturing equipment or heating equipment |
| JP2004221102A (en) | 2003-01-09 | 2004-08-05 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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2005
- 2005-09-26 JP JP2005277207A patent/JP4820137B2/en active Active
- 2005-09-30 KR KR1020050091919A patent/KR100742451B1/en active IP Right Grant
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| KR20070034911A (en) | 2007-03-29 |
| KR100719307B1 (en) | 2007-05-18 |
| KR20070034978A (en) | 2007-03-29 |
| CN100452291C (en) | 2009-01-14 |
| KR100742451B1 (en) | 2007-07-25 |
| JP4820137B2 (en) | 2011-11-24 |
| JP2007088324A (en) | 2007-04-05 |
| TW200723367A (en) | 2007-06-16 |
| CN1941278A (en) | 2007-04-04 |
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