CN100452291C - Retainer tectosome, insulation tectosome and heating arrangement of heater - Google Patents
Retainer tectosome, insulation tectosome and heating arrangement of heater Download PDFInfo
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- CN100452291C CN100452291C CNB2006100710805A CN200610071080A CN100452291C CN 100452291 C CN100452291 C CN 100452291C CN B2006100710805 A CNB2006100710805 A CN B2006100710805A CN 200610071080 A CN200610071080 A CN 200610071080A CN 100452291 C CN100452291 C CN 100452291C
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- tectosome
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
A heating element holding structure is used for preventing a pair of power feeding devices of the heating element from being short-circuited or deposited due to welding. This structure is composed of a heat insulating block (36) formed cylindrically by a heat insulating material, a heating element (42) equipped with a pair of power feeding devices (45, 46), and a heater unit (30) with the heating element (42) arranged at the inner side of a mounting groove (40) of the heat insulating block (36); a pair of power feeding devices (45, 46) of the heating element (42) is held by an external insulator (52) and an inner insulator (55), and a partition wall (58) is built between the power feeding devices (45, 46) of the inner insulator (55). In this way, even if the heating element (42) extends for heat expansion or deterioration with age, the partition wall (58) prevents a pair of power feeding devices (45, 46) from contacting with each other, and consequently neither heating element short-circuit nor adhesion does not take place.
Description
Technical field
The present invention relates to the maintenance tectosome of heater, insulated tectosome, heater and substrate board treatment, be particularly related to the technology of a pair of power supply that keeps heater, for example go up deposition and (deposition) dielectric film at the semiconductor wafer that is assembled with conductor integrated circuit device (below be called IC) (below be called wafer), the CVD device of metallic film and semiconductor film, the oxidation membrane formation device, disperser, the technology that the annealing device semiconductor devices such as (furnace) that heat treatments (thermal treatment) such as the carrier activate after being used for carrying out the ion injection and the backflow (reflow) of planarization and annealing are used effectively uses.
Background technology
In the manufacture method of IC, when wafer is implemented film forming processing and DIFFUSION TREATMENT ,/general hot wall type diffusion CVD the device that is using the batch (-type) erect type.
Generally, the hot wall type of batch (-type) erect type diffusion CVD device (below be called the CVD device) possesses: reaction tube, by the interior pipe that forms the process chamber of sending into wafer with surround that outer tube of pipe constitutes in this, be arranged to erect type; Brilliant boat keeps the multi-disc wafer as processed substrate, and is sent in the process chamber of interior pipe; Gas introduction tube imports to unstrpped gas in the interior pipe; Blast pipe is with exhaust in the reaction tube; Unit heater is located at outside the reaction tube, will heat in the reaction tube.
And, under the state of by brilliant boat the multi-disc wafer vertically being arranged and being kept, send into (brilliant boat loading) after interior pipe is interior from the fire door of lower end, unstrpped gas is imported in the interior pipe from gas introduction tube, and be heated by unit heater in the reaction tube.Thus, cvd film is deposited on the wafer, and implements DIFFUSION TREATMENT.
In this CVD device in the past, unit heater as heater has following structure, promptly possess: heat insulation wall body, use heat-barrier materials such as aluminium oxide or silicon dioxide, form (vacuum suction formation) method by vacuum and form the whole long cylinder shape that covers reaction tube; Heater uses siderochrome aluminium (Fe-Cr-Al) alloy or molybdenum disilicide (MoSi
2) and form to such an extent that grow up; And housing, cover heat insulation wall body; And heater was arranged on the interior week of heat insulation wall body.
In such unit heater, under the situation of embodiment, use and form tabular heater in order to strengthen the heating effective area as the heating rapidly more than 30 ℃/minute.
And, under the situation of using this tabular heater, be used for the power supply of this heater energising is constituted as described below.
The both ends of tabular heater are bent to the right angle and form a pair of power supply respectively on thickness direction, this a pair of power supply connects heat insulation wall body, and the breakthrough part with this power supply bends to the right angle again, connects power supply terminal on this bend.In order to prevent the thermal expansion warpage of this a pair of power supply, be insulated son and keep because of adstante febre.For example with reference to patent documentation 1.
Patent documentation 1: TOHKEMY 2004-39967 communique
In the maintenance tectosome of above-mentioned heater, help adding heat distribution owing to narrow more, so the interval of a pair of power supply of heater is set narrowlyer mostly.
But if set the interval of a pair of power supply of heater narrower, then the two ends of heater become approaching state.
On the other hand, if the temperature of heater rises, then can extend because of thermal expansion.In addition, if heater uses for a long time, the trend of elongation is arranged also.
And if the heater elongation, then the interval at the two ends of heater narrows down, so the interval of a pair of power supply of heater narrows down, final contact electric short circuit can take place thus or welding mutually under the temperature condition with higher.
Summary of the invention
The objective of the invention is, provide a kind of and can prevent that the short circuit of heater or welding from closing, prolonging the maintenance tectosome of the heater in heater life-span.
Second purpose of the present invention is, a kind of short circuit that can prevent heater or welding, the insulated tectosome in prolongation heater life-span are provided.
The 3rd purpose of the present invention is, a kind of short circuit that can prevent heater or welding, the heater in prolongation heater life-span are provided.
The 4th purpose of the present invention is, a kind of short circuit that can prevent heater or welding, the substrate board treatment in prolongation heater life-span are provided.
The representative technical scheme of means that is used for solving above-mentioned problem is as follows.
(1) a kind of maintenance tectosome of heater is used for substrate board treatment, and it has:
Heat insulation wall body forms drum;
Heater has along interior all sides of this heat insulation wall body and is arranged to cylindrical portion cylindraceous and is located at a pair of power supply at the both ends of this cylindrical portion with connecting above-mentioned heat insulation wall body;
Insulator, its part is located between the above-mentioned a pair of power supply at least, and another part is arranged to from the inner peripheral surface at the above-mentioned both ends of crossing above-mentioned cylindrical portion between the above-mentioned a pair of power supply and is arrived the inboard of the cylindrical portion of above-mentioned heater.
(2) a kind of insulated tectosome, the heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with at the both ends of this cylindrical portion, this insulated tectosome is used for and will isolates between the above-mentioned both ends and between the above-mentioned a pair of power supply, it has wall part, this wall part is from beginning between the above-mentioned a pair of power supply and arrive the inboard of above-mentioned cylindrical portion after crossing position on the periphery of above-mentioned cylindrical portion, will isolate between the above-mentioned both ends and between the above-mentioned a pair of power supply.
(3) a kind of insulated tectosome, the heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with at the both ends of this cylindrical portion, this insulated tectosome is used for and will isolates between the above-mentioned both ends and between the above-mentioned a pair of power supply, it has wall part, the position of this wall part from the periphery that begins to arrive above-mentioned cylindrical portion between the above-mentioned a pair of power supply will isolate between the above-mentioned both ends and between the above-mentioned a pair of power supply.
(4) a kind of insulated tectosome, the heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with in the end of this cylindrical portion, and this insulated tectosome is used for and will isolates between the above-mentioned a pair of power supply, wherein,
This insulated tectosome is set at the outside of above-mentioned heat insulation wall body, will isolate between above-mentioned a pair of power supply, and above-mentioned power supply connects the heat insulation wall body of the outer circumferential side that is formed on above-mentioned cylindrical portion and is provided with.
(5) a kind of insulated tectosome, the heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with in the end of this cylindrical portion, the heat insulation wall body that this a pair of power supply connects the outer circumferential side that will be formed on above-mentioned cylindrical portion connects and is provided with, this insulated tectosome is set at the inboard or the outside of above-mentioned heat insulation wall body, to isolate between above-mentioned a pair of power supply, wherein
Has hardness, bending strength or the density bigger than above-mentioned heat insulation wall body.
(6) a kind of heater has any insulated tectosome in above-mentioned (1)～(5).
(7) a kind of substrate board treatment,
Heater with above-mentioned (6);
Possess: process chamber, heated by this heater, handle processed substrate; Gas introduction tube imports to gas in the above-mentioned process chamber; Blast pipe is with above-mentioned process chamber exhaust.
Description of drawings
Fig. 1 is the front section view of expression as the CVD device of one embodiment of the present invention.
Fig. 2 is the section plan of expression as the major part of the unit heater of one embodiment of the present invention.
Fig. 3 represents the maintenance tectosome major part as the heater of one embodiment of the present invention, and Fig. 3 (a) is the expanded view of observing from the inboard, and Fig. 3 (b) is the cutaway view along the b-b line of Fig. 3 (a), and Fig. 3 (c) is the cutaway view along the c-c line of Fig. 3 (a).
Fig. 4 (a) is the stereogram of expression as the outside insulator of an execution mode of the insulated tectosome that the present invention relates to, and Fig. 4 (b) is the stereogram of the inboard insulator of this insulated tectosome of expression.
Fig. 5 is the stereogram of unit heater.
Fig. 6 is each outside summary section plan of the anti-contact action of expression, the situation of Fig. 6 (a) expression comparative example, the situation of Fig. 6 (b) expression present embodiment.
Embodiment
Below, with reference to the description of drawings one embodiment of the present invention.
Use in the unit heater of one execution mode of the heater that the present invention relates to of the maintenance tectosome of the heater that the present invention relates in the present embodiment, in the CVD device (the hot wall type diffusion CVD device of batch (-type) erect type) that is arranged at as an execution mode of the substrate board treatment that the present invention relates to.
As the CVD device of an execution mode of substrate board treatment of the present invention as shown in Figure 1, possess the reaction tube 11 of the erect type that vertically sets and supported regularly, reaction tube 11 comprises outer tube 12 and interior pipe 13.
Outer tube 12 uses quartzy (SiO
2) and be integrally formed as drum, interior pipe 13 uses quartzy (SiO
2) or carborundum (SiC) be integrally formed as drum.
Outer tube 12 forms that its internal diameter is bigger than the external diameter of interior pipe 13, upper end closed and the drum of lower ending opening, be cover circularly with one heart in pipe 13, the outside of pipe 13 in surrounding.
Interior pipe 13 forms the drum of both ends open up and down, and the tube hollow bulb of interior pipe 13 forms the process chamber 14 that the multi-disc wafer is admitted to, and this multi-disc wafer is retained the vertically state of arrangement by brilliant boat 22.The lower ending opening of interior pipe 13 is configured for sending into the fire door 15 of sending wafer.
Bottom between outer tube 12 and the interior pipe 13 is hermetic closed by the menifold 16 that forms toroidal, and for the replacing of pipe 13 and outer tube 12 in carrying out etc., menifold 16 is in dismounting is installed in freely respectively on pipe 13 and the outer tube 12.
Be supported on by menifold 16 on the heater pedestal 19 of CVD device, reaction tube 11 becomes the state of vertical assembling.
Top at the sidewall of menifold 16 is connecting blast pipe 17, and blast pipe 17 constitutes, and is connected with exhaust apparatus (not shown), process chamber 14 vacuum exhausts can be become the vacuum degree of regulation.Blast pipe 17 becomes the state that is communicated with the gap that is formed between outer tube 12 and the interior pipe 13, constitutes exhaust channel 18 by the gap of outer tube 12 and interior pipe 13.The shape of cross section of exhaust channel 18 is the toroidal of certain width.
Because blast pipe 17 is connected with menifold 16, so blast pipe 17 becomes the ducted body that forms drum, the state more bottom of the exhaust channel 18 of formation vertically also of being configured in.
On menifold 16, the seal cover 20 of inaccessible lower ending opening from vertical direction downside butt.Seal cover 20 forms the disc-shape that has with the external diameter diameter about equally of outer tube 12, can be by boat elevator 21 (only the illustrating a part) lifting in vertical direction that is arranged on reaction tube 11 outsides.
On the center line of seal cover 20, vertically erect and supporting the brilliant boat 22 that is used to keep as the wafer 1 of processed substrate.
Connecting gas introduction tube 23 on seal cover 20, this gas introduction tube 23 is communicated with the fire door 15 of interior pipe 13, is connecting unstrpped gas device and vector gas feedway (all not shown) on gas introduction tube 23.Be directed to the gas of fire door 15 from gas introduction tube 23, circulation in the process chamber 14 of interior pipe 13, by exhaust channel 18 backs from blast pipe 17 dischargings.
In the outside of outer tube 12, the unit heater 30 of the heater inside of heating reaction tube 11, that relate to as present embodiment, surround outer tube 12 around and be provided with concentric circles.
In the inside of housing 31, with the outer tube 12 concentric heat insulation wall bodies 33 that are provided with the drum bigger circularly than the external diameter of outer tube 12.Gap 32 between the inner peripheral surface of heat insulation wall body 33 and housing 31 is the spaces that are used for air cooling.
Heat insulation wall body 33 possesses: the top wall portion 34 of disc-shape has the external diameter littler than the internal diameter of housing 31; And the side wall portion 35 of drum, have than big internal diameter of the external diameter of outer tube 12 and the external diameter littler than the internal diameter of housing 31.
In addition, also can constitute, the exhaust outlet of the roof that connects top wall portion 34 and housing 31 is set, make the environmental gas air blast cooling between heat insulation wall body 33 and the outer tube 12.
By setting the external diameter of side wall portion 35 littler, between side wall portion 35 and housing 31, form gap 32 as air-cooled space than the internal diameter of housing 31.
In addition, also can constitute, through hole is set at the side wall portion 35 of heat insulation wall body 33, so that the space between gap 32, heat insulation wall body 33 and the outer tube 12 connects, and, make the environmental gas air blast cooling between heat insulation wall body 33 and the outer tube 12.
And it is a cylindrical shell that the side wall portion 35 of heat insulation wall body 33 is constructed by stacked a plurality of heat insulation 36 in vertical direction.
As shown in Figures 1 and 2, heat insulation 36 possesses the main body 37 of the annular of short drum, and the heat-barrier material that main body 37 adopts fibrous or spherical aluminium oxide or silicon dioxide etc. also to have insulation material function is integrally formed by the vacuum forming method.
In addition, that heat insulation 36 and main body 37 also can be divided at the circumferencial direction along drum is a plurality of, for example with the angle of regulation drum is divided under a plurality of states and is shaped, and is assembled into drum then.
If like this, because in heat insulation 36, also form play (movability degree), so also be difficult to separately even applied stress to heat insulation 36.Preferably, cut apart if carry out four, then also better aspect size.
In the bottom of main body 37, the state that is cut into toroidal with the part with week in the main body 37 is formed with in conjunction with protuberance 38.In the upper end of main body 37, the state that is cut into toroidal with the part with main body 37 peripheries is formed with in conjunction with recess 39.
In addition, the interior all sides in main body 37 upper ends are formed with the outstanding protuberance 37a (with reference to Fig. 3 (c)) of direction to the inside.
Between the protuberance 37a of adjacent heat insulation 36 up and down, be formed with the mounting groove (recess) 40 that is used to install heater with certain degree of depth, certain height, so that it becomes the state that the inner peripheral surface of side wall portion 35 is cut into toroidal.Respectively be formed with a mounting groove 40 for each heat insulation 36, become the circle of a sealing.
At the inner peripheral surface of mounting groove 40, shown in Fig. 3 (b), the maintenance apparatus 41 of shape followed closely in the U word that the heater location keeps along a plurality of being used for circumferentially roughly equally spaced is installed.
In heater 42, adopt Fe-Cr-Al alloy or MoSi
2And SiC constant resistance exothermic material.Heater 42 is corrugated writing board shape shown in Fig. 3 (a).In addition, last side wave 42a of portion and last side clearance 43a, and down the 42b of side wave portion and underside gap 43b alternately form respectively.They are integrally formed by punch process or Laser cutting etc.
As mentioned above, formed the cylindrical portion 51 of the heater 42 that is toroidal.
As Fig. 1～shown in Figure 3, the cylindrical portion 51 of heater 42 is set in each mounting groove 40 of heat insulation 36.Hypomere is being provided with the cylindrical portion 51 of other adjacent heaters 42 isolator thereon.
Shown in Fig. 3 (a), Fig. 3 (b), a plurality of maintenance apparatus 41,41 are configured in from the lower end of last side clearance 43a to the position of the upper end of underside gap 43b, and insert in the heat insulation 36.Like this, the state that leaves with the inner peripheral surface from mounting groove 40 keeps heater 42.
As shown in Figures 2 and 3, at the both ends 44,44 of the cylindrical portion 51 of heater 42, a pair of power supply 45,46 at right angles and to radial direction outside curve ground forms with the circumferencial direction of toroidal respectively.At the leading section of a pair of power supply 45,46, a pair of connecting portion 47,48 is at right angles crooked and form with power supply 45,46 respectively, and rightabout each other mutually.
For the reduction of the caloric value that suppresses a pair of power supply 45,46, the interval of a pair of power supply 45,46 is set lessly.
Preferably, with the crooked rectangular position of the difference in a pair of power supply 45,46 outside, be made as near the topmost of the last side wave 42a of portion of heater 42 or near the foot of time 42b of side wave portion from the circumferencial direction of toroidal towards radial direction.
By like this, can further heater be laid on a pair of power supply 45,46 very close to each otherly.
On the heat insulation 36 of the drum corresponding, be formed with a pair of slotting groove 49,50 respectively with the position of a pair of power supply 45,46.Two slotting grooves 49,50 from mounting groove 40 sides along drum the outer circumferential side that radially reaches main body 37 and form.Two power supplies 45,46 are inserted respectively and are led in two slotting grooves 49,50.
In addition, two slotting grooves 49,50 also can be, before inserting logical two power supplies 45,46, comprise between two slotting grooves 49,50 interior, two slotting grooves 49,50 form a slotting groove, after inserting logical two power supplies 45,46,, form heat insulation wall body 33 and insert groove 49,50 by bury the heat-barrier material that fibrous or spherical aluminium oxide or silicon dioxide etc. also have insulation material function underground 45,46 of two power supplies.
In two slotting groove 49,50 parts of the outer peripheral face of main body 37, be provided with an example of insulated tectosome, promptly as the insulator of outside insulating element (below, be called outside insulator) 52.
Shown in Fig. 4 (a), outside insulator 52 is integrally formed as the square position shape with some curved surface R1, and is fixed on the outer peripheral face of main body 37 for roughly square, and this curved surface R1 is corresponding with the curved surface of the outer peripheral face of heat insulation 36.
In addition, preferably, if the hardness height of the hardness ratio heat insulation 36 of outside insulator 52 then can suppress the warpage of heater 42 effectively.
In addition, preferably, if the bending strength of outside insulator 52 and/or density than the bending strength and/or the density height of heat insulation 36, then can suppress the warpage of heater 42 effectively.
On the top of outside insulator 52, be formed with the slotting a pair of maintenance groove 53,54 that leads to portion of conduct that is used for inserting logical a pair of power supply respectively.Two positions that keep the position of groove 53,54 corresponding to two slotting grooves 49,50 are roughly same position.In two maintenance grooves 53,54, insert respectively and lead to and keeping slotting two power supplies 45,46 that lead in two slotting grooves 49,50.
Preferably, shown in Fig. 4 (a), maintenance groove 53,54 can be incised to the topmost of outside insulator 52 and form.This is because after being provided with a pair of power supply, can install, change outside insulator 52.But, keep groove 53,54 also can not be incised to the topmost of outside insulator 52, but form poroid.
By two power supplies 45,46 that keep groove 53,54 to keep heater 42 of outside insulator 52, can suppress the warpage of heater 42.Two intervals that keep the interval of groove 53,54 corresponding to two slotting grooves 49,50 of main body 37 are identical distance.
Here, the warpage of so-called heater 42 is meant by 42 power supplies make heater 42 that thermal expansion take place or by stopping power supply thermal contraction take place to heater, from the offset of original configuration or the state that moves or reverse and move.
At the position corresponding to two slotting grooves 49,50 of the inner peripheral surface of mounting groove 40, the example that butt is fixed with insulated tectosome is promptly as the insulator of inboard insulating element (below, be called inboard insulator) 55.
Shown in Fig. 4 (b), inboard insulator 55 is integrally formed as the square position shape with some curved surface R2, and is fixed on the outer peripheral face of main body 37 for roughly square, and this curved surface R2 is corresponding with the curved surface of the inner peripheral surface of heat insulation 36.
In addition, preferably,, then can suppress the warpage of heater 42 effectively if make the hardness height of the hardness ratio heat insulation 36 of inboard insulator 55.
In addition, preferably,, then can suppress the warpage of heater 42 effectively if make the bending strength of inboard insulator 55 and/or density bending strength and/or density height than heat insulation 36.
On the top of inboard insulator 55, be formed with the slotting a pair of maintenance groove 56,57 that leads to portion of conduct that is used for inserting logical a pair of power supply respectively.Two positions that keep the position of groove 56,57 corresponding to two slotting grooves 49,50 are roughly same position.In two maintenance grooves 56,57, insert respectively and lead to and keeping slotting two power supplies 45,46 that lead in two slotting grooves 49,50.
Preferably, shown in Fig. 4 (b), maintenance groove 56,57 can be incised to the topmost of inboard insulator 55 and form.This is because after being provided with a pair of power supply, can install, change inboard insulator 55.But, keep groove 56,57 also can not be incised to the topmost of inboard insulator 55, but form poroid.
By two power supplies 45,46 that keep groove 56,57 to keep heater 42 of inboard insulator 55, can suppress the warpage of heater 42.The interval of two slotting grooves 49,50 of the corresponding main body 37 in interval of two maintenance grooves 56,57 is identical distance.
On the inner side end of inboard insulator 55 (with the end face of the opposition side of heat insulation 36, be the end face of cylindrical portion 51 sides of heater 42), keep between the groove 56,57 at two, be provided with a pair of power supply 45,46 that separates heater 42 and the wall part 58 of cylindrical portion 51.The thickness of wall part 58 (t) is, when it is connected on the inner peripheral surface of mounting groove 40 fixedly, makes the position on the inner peripheral surface of its cylindrical portion 51 that can be set to heater 42 at least.
Preferably, as shown in Figure 2, the thickness of wall part 58 (t) can be, when it is connected on the inner peripheral surface of mounting groove 40 fixedly, should crosses on the inner peripheral surface of cylindrical portion 51 of heater 42 and is set to the inboard of cylindrical portion 51.By like this, can separate a pair of power supply 45,46 and the cylindrical portion 51 of heater 42 effectively.
In addition, the height of wall part 58 (h) is following size (h), promptly when it is connected on the inner peripheral surface of mounting groove 40 fixedly, at least with the equal or above value of the plate width of heater 42.In addition, wall part 58 is set at and two positions that keep groove 56,57 equal heights, so that it can be arranged on the position of equal height with a pair of power supply 45,46, thereby separates a pair of power supply 45,46 of heater 42.
Preferably, the height of wall part 58 (h) is shown in Fig. 3 (a), can be made as when on the inner peripheral surface that is connected to mounting groove 40, being provided with fixedly, bigger than the value (h1) between the height of the foot of the height of the topmost of the last side wave 42a of portion of the cylindrical portion 51 of heater 42 and the following side wave 42b of portion.By like this, can separate a pair of power supply 45,46 and cylindrical portion 51 effectively.
In addition, bend R3 not only can make curve form, also can make the taper that is made of tabular surface.
As shown in Figures 2 and 3, on a connecting portion of the heater 42 of epimere side (below be called positive side connecting portion) 47, weld power supply terminal 61, on another connecting portion (below be called the minus side connecting portion) 48, welding the upper end that overlaps line 62.The bottom of overlap joint line 62 is connected with the positive side connecting portion 47 of the heater 42 of hypomere side.
Thereby, the positive side connecting portion 47 of the heater 42 of hypomere side be positioned at the epimere side heater 42 minus side connecting portion 48 under near, the both ends 44,44 of cylindrical portion 51 of heater 42 that become the hypomere side are than both ends 44,44 states to this part distance of circumferential offset of the cylindrical portion 51 of the heater 42 of epimere side.
Overlap joint line 62 will be in order to suppress from the heat radiation on overlap joint line 62 surfaces to adopt Fe-Cr-Al alloy or MoSi for less
2And SiC constant resistance exothermic material, section forms circular pole shape.But according to the situation of the current capacity that overlaps line, overlap joint line 62 also can form section tetragonal angle rod shape.
As Fig. 2 and shown in Figure 5, on the outer peripheral face of the housing 31 of unit heater 30 with power supply terminal 51 corresponding position, place is set, be covered with the terminal shell 63 that coats two connecting portions 47,48 and overlap joint line 62, be filled with heat-barrier materials 64 such as glass fibre in the inside of terminal shell 63.In terminal shell 63, be inserted with a plurality of power supply terminals 61 via insulator 65.
Then, explanation utilizes the CVD device of relevant said structure to make the film formation process of the manufacture method of semiconductor devices such as IC simply.
As shown in Figure 1, if multi-disc thin slice 1 is seated in (wafer charging) on the brilliant boat 22, the brilliant boat 22 that has then kept multi-disc wafer 1 is mentioned by boat elevator 21 and is sent to (brilliant boat loading) in the process chamber 11.
Under this state, seal cover 20 becomes the state with the lower ending opening sealing of menifold 16.
The inside of reaction tube 11 by vacuum exhaust, becomes the pressure (vacuum degree) of regulation by blast pipe 17.
In addition, the inside of reaction tube 11 is become the temperature of regulation by 30 heating of heater unit.At this moment, according to temperature sensor 24 detected temperature informations, FEEDBACK CONTROL is to the energising situation of the heater 42 of unit heater 30, so that become the Temperature Distribution of regulation in the process chamber 14.
Then, brilliant boat 22 is rotated by rotating mechanism 25, wafer 1 rotation thus.
Then, the unstrpped gas that will be controlled to be the regulation flow by gas introduction tube 23 imports in process chamber 14.
The unstrpped gas that is imported into rises in process chamber 14, flows out to exhaust channel 18 from the upper end open of interior pipe 13, is discharged from blast pipe 17 then.
Unstrpped gas is contacting with the surface of wafer 1 by in the process chamber 14 time, at this moment, by thermal cvd reactor with thin film deposition on the surface of wafer 1.
If passed through the predefined processing time, then supply with inert gas from inert gas supply source (not shown), be replaced into inert gas in the process chamber 14, and make the pressure in the process chamber 14 return to normal pressure.
Then, by boat elevator 21 seal cover 20 is descended, with the lower ending opening of menifold 16, and the wafer after will handling 1 remains under the state on the brilliant boat 22, passes out to the outside (brilliant boat unloading) of reaction tube 11 from the lower end of menifold 16.
Then, the wafer 1 after handling is taken out (wafer discharging) from brilliant boat 22.
But,, then extend because of thermal expansion if heater 42 temperature of unit heater 30 rise.In addition, heater 42 also has the trend of elongation because of long-time use.
For example, shown in Fig. 6 (a), because the interval of a pair of power supply 45,46 of heater 42 is set narrowlyer, if so heater 42 elongations, the interval of then a pair of power supply 45,46 narrows down, finally contact, thereby electric short circuit might take place or the mutual welding of meeting under the temperature condition with higher.
Particularly, shown in Fig. 3 (a), Fig. 3 (b), owing near power supply, need to be provided with slotting groove 49,50 and inboard insulator 55, keep apparatus 41 to keep the cylindrical portion 51 of heater 42 so can not dispose well, so heater 42 becomes easily to the circumferencial direction elongation, so problem as described above easily takes place.
In addition, keep apparatus 41 to come off or to the circumferencial direction skew of cylindrical portion 51 from the heat insulation 36 that breaks sometimes because of the warpage of heater 42.At this moment, the interval of a pair of power supply 45,46 narrows down, finally contact, thus, electric short circuit might take place or mutual welding when temperature is higher.
But, in the present embodiment, a pair of power supply 45,46 is retained the state of mutually insulated by outside insulator 52 and inboard insulator 55, and on inboard insulator 55, between two power supplies 45,46 and than cylindrical portion 51, be provided with wall part 58 by the radial direction inboard, so, shown in Fig. 6 (b), even under the situation of heater 42 elongations, can prevent that also a pair of power supply 45,46 from reaching the contact of cylindrical portion 51 each other, can be with the short circuit and the anti-possible trouble that terminates in of welding of heater 42.
According to above-mentioned execution mode, can access following effect.
(1) by keeping a pair of power supply of heater by outside insulator and inboard insulator and the wall part that contacts of the cylindrical portion that stops two power supplies and heater being set on inboard insulator, even under the situation of heater elongation, also can stop a pair of power supply to reach the cylindrical portion contact of heater each other, so can be with the short circuit and the anti-possible trouble that terminates in of welding of heater.
(2) by the short circuit and the welding of heater are prevented terminating in possible trouble, can prolong the life-span of heater.
(3) since can prevent heater when elongation heater a pair of power supply each other and the contact of cylindrical portion, so, can make a pair of power supply approaching mutually with not using situation of the present invention to compare.As a result, can not be suppressed at Min. with there being temperature in the power supply of heater to reduce.
In addition, the present invention is not limited to above-mentioned execution mode, certainly carries out various changes in the scope that does not break away from its purport.
For example, the inboard insulator 55 with wall part 58 both can form with the main body 37 of the heat insulation 36 of constructing heat insulation wall body, also can be formed on the one-piece type heat insulation wall body 33.
The maintenance groove 56,57 of inboard insulator 55 is not limited to be respectively formed at upside, also can be respectively formed at the downside of inboard insulator 55.
Equally, the maintenance groove 53,54 for inboard insulator 52 also is not limited to not be formed on upside, also can be respectively formed at the downside of outside insulator 52.
That is, having the insulated tectosome that the present invention relates to of wall part, both can be that insulator constitutes by the insulating element with heat insulation wall body split, also can itself be made of heat insulation wall body.
The maintenance tectosome of the heater that the present invention relates to is not limited to be applicable in the unit heater of CVD device, also can generally be applicable to all heaters such as unit heater of oxidation membrane formation device, disperser and annealing device.
And then the heater that the present invention relates to is not limited to be applicable in the CVD device, also can generally be applicable to substrate board treatments such as oxidation membrane formation device, disperser and annealing device.
Claims (44)
1, a kind of maintenance tectosome of heater is used for substrate board treatment, it is characterized in that having:
Heat insulation wall body forms drum;
Heater has along interior all sides of this heat insulation wall body and is arranged to cylindrical portion cylindraceous and is located at a pair of power supply at the both ends of this cylindrical portion with connecting above-mentioned heat insulation wall body;
Insulator, its part is located between the above-mentioned a pair of power supply at least, and another part is arranged to from the inner peripheral surface at the above-mentioned both ends of crossing above-mentioned cylindrical portion between the above-mentioned a pair of power supply and is arrived the inboard of the cylindrical portion of above-mentioned heater.
2, a kind of insulated tectosome is characterized in that,
The heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with at the both ends of this cylindrical portion, and this insulated tectosome is used for and will isolates between the above-mentioned both ends and between the above-mentioned a pair of power supply;
Have wall part, this wall part is from beginning between the above-mentioned a pair of power supply and arrive the inboard of above-mentioned cylindrical portion after crossing position on the periphery of above-mentioned cylindrical portion, will isolate between the above-mentioned both ends and between the above-mentioned a pair of power supply.
3, a kind of insulated tectosome is characterized in that,
The heater that is used for the heater of substrate board treatment has the cylindrical portion of drum and a pair of power supply that is provided with at the both ends of this cylindrical portion, and this insulated tectosome is used for and will isolates between the above-mentioned both ends and between the above-mentioned a pair of power supply;
Have wall part, the position of this wall part from the periphery that begins to arrive above-mentioned cylindrical portion between the above-mentioned a pair of power supply will isolate between the above-mentioned both ends and between the above-mentioned a pair of power supply.
4, insulated tectosome as claimed in claim 2 is characterized in that, a pair of power supply of above-mentioned heater connects the heat insulation wall body of the outer circumferential side that is formed on above-mentioned cylindrical portion and is provided with, and has 2 insulating elements with above-mentioned heat insulation wall body split.
5, insulated tectosome as claimed in claim 3 is characterized in that, a pair of power supply of above-mentioned heater connects the heat insulation wall body of the outer circumferential side that is formed on above-mentioned cylindrical portion and is provided with, and has 2 insulating elements with above-mentioned heat insulation wall body split.
6, insulated tectosome as claimed in claim 2, it is characterized in that, the a pair of power supply of above-mentioned heater connects the heat insulation wall body of the outer circumferential side that is formed on above-mentioned cylindrical portion and is provided with, and has with above-mentioned heat insulation wall body split and is located at the outside insulating element of the external side of above-mentioned thermal wall.
7, insulated tectosome as claimed in claim 2, it is characterized in that, the a pair of power supply of above-mentioned heater connects the heat insulation wall body of the outer circumferential side that is formed on above-mentioned cylindrical portion and is provided with, have above-mentioned wall part, have with above-mentioned heat insulation wall body split and be located at the inboard insulating element of above-mentioned heat insulation wall body inboard.
8, insulated tectosome as claimed in claim 4 is characterized in that, has inboard insulating element that is located at above-mentioned heat insulation wall body inboard and the outside insulating element that is located at the external side of above-mentioned thermal wall.
9, insulated tectosome as claimed in claim 4 is characterized in that, above-mentioned insulating element has than the big hardness of above-mentioned heat insulation wall body.
10, insulated tectosome as claimed in claim 6 is characterized in that, above-mentioned outside insulating element has than the big hardness of above-mentioned heat insulation wall body.
11, insulated tectosome as claimed in claim 7 is characterized in that, above-mentioned inboard insulating element has than the big hardness of above-mentioned heat insulation wall body.
12, insulated tectosome as claimed in claim 8 is characterized in that, above-mentioned inboard insulating element and above-mentioned outside insulating element have than the big hardness of above-mentioned heat insulation wall body.
13, insulated tectosome as claimed in claim 4 is characterized in that, above-mentioned insulating element has than the big bending strength of above-mentioned heat insulation wall body.
14, insulated tectosome as claimed in claim 6 is characterized in that, above-mentioned outside insulating element has than the big bending strength of above-mentioned heat insulation wall body.
15, insulated tectosome as claimed in claim 7 is characterized in that, above-mentioned inboard insulating element has than the big bending strength of above-mentioned heat insulation wall body.
16, insulated tectosome as claimed in claim 8 is characterized in that, above-mentioned inboard insulating element and above-mentioned outside insulating element have than the big bending strength of above-mentioned heat insulation wall body.
17, insulated tectosome as claimed in claim 9 is characterized in that, above-mentioned insulating element has than the big bending strength of above-mentioned heat insulation wall body.
18, insulated tectosome as claimed in claim 10 is characterized in that, above-mentioned outside insulating element has than the big bending strength of above-mentioned heat insulation wall body.
19, insulated tectosome as claimed in claim 11 is characterized in that, above-mentioned inboard insulating element has than the big bending strength of above-mentioned heat insulation wall body.
20, insulated tectosome as claimed in claim 12 is characterized in that, above-mentioned inboard insulating element and above-mentioned outside insulating element have than the big bending strength of above-mentioned heat insulation wall body.
21, as claim 4,9,13 or 17 described insulated tectosomes, it is characterized in that above-mentioned insulating element has the density than above-mentioned thermal wall height.
As claim 6,10,14 or 18 described insulated tectosomes, it is characterized in that 22, above-mentioned outside insulating element has the density than above-mentioned thermal wall height.
As claim 7,11,15 or 19 described insulated tectosomes, it is characterized in that 23, above-mentioned inboard insulating element has the density than above-mentioned thermal wall height.
As claim 4,9,13 or 17 described insulated tectosomes, it is characterized in that 24, above-mentioned insulating element is formed than the big ceramic material of above-mentioned heat insulation wall body by the containing ratio of alumina composition.
As claim 6,10,14 or 18 described insulated tectosomes, it is characterized in that 25, above-mentioned outside insulating element is formed than the big ceramic material of above-mentioned heat insulation wall body by the containing ratio of alumina composition.
As claim 7,11,15 or 19 described insulated tectosomes, it is characterized in that 26, above-mentioned inboard insulating element is formed than the big ceramic material of above-mentioned heat insulation wall body by the containing ratio of alumina composition.
27, as each described insulated tectosome in the claim 2,4,6～20, it is characterized in that,
For with the waveform flat-plate shape, have alternately be formed with respectively side wave portion and upside clearance portion and down the above-mentioned heater of the above-mentioned cylindrical portion of side wave portion and underside gap portion isolate,
The height of above-mentioned wall part (h) is arranged to and the equal or above value of the plate width of above-mentioned heater.
28, as each described insulated tectosome in the claim 2,4,6～20, it is characterized in that,
For with the waveform flat-plate shape, have alternately be formed with respectively side wave portion and upside clearance portion and down the above-mentioned heater of the above-mentioned cylindrical portion of side wave portion and underside gap portion isolate,
The height of above-mentioned wall part (h) is arranged to bigger than the value (h1) between the height of the foot of the height of the topmost of the last side wave portion of above-mentioned heater and following side wave portion.
29, as claim 4,9,13 or 17 described insulated tectosomes, it is characterized in that, on above-mentioned 2 insulating elements, be respectively equipped with a pair of maintenance groove that is used to keep above-mentioned a pair of power supply.
30, as claim 6,10,14 or 18 described insulated tectosomes, it is characterized in that, on the insulating element of the above-mentioned outside, be provided with a pair of maintenance groove that is used to keep above-mentioned a pair of power supply.
31, as claim 7,11,15 or 19 described insulated tectosomes, it is characterized in that, on above-mentioned inboard insulating element, be provided with a pair of maintenance groove that is used to keep above-mentioned a pair of power supply, make to keep having above-mentioned wall part between the groove at two.
32, as claim 7,11,15 or 19 described insulated tectosomes, it is characterized in that above-mentioned wall part is arranged on the inner side end of above-mentioned inboard insulating element, be formed with bend (R3) in the two side ends of above-mentioned wall part.
33, as each described insulated tectosome in the claim 2,4,6～20, it is characterized in that, be provided with a pair of maintenance groove that is used to keep above-mentioned a pair of power supply.
34, insulated tectosome as claimed in claim 33 is characterized in that, above-mentioned maintenance flute profile becomes, and is incised to the topmost or the foot of above-mentioned insulated tectosome always.
35, as each described insulated tectosome in the claim 4,6～20, it is characterized in that, by being incorporated in the mounting groove that is formed on the above-mentioned heat insulation wall body, other neighbouring heater will be left and the above-mentioned heater with above-mentioned cylindrical portion that is provided with is isolated.
36, as each described insulated tectosome in the claim 2,4,6～20, it is characterized in that, be used for the above-mentioned heater waveform flat-plate shape, that have the above-mentioned cylindrical portion that alternately is formed with side wave portion and upside clearance portion and following side wave portion and underside gap is respectively isolated.
37, as each described insulated tectosome in the claim 2,4,6～20, it is characterized in that,
Be used to isolate above-mentioned a pair of power supply, above-mentioned a pair of power supply from the circumferencial direction of cylindrical portion be formed near the topmost of last side wave portion of above-mentioned heater to crooked respectively position, the radial direction outside or the foot of time side wave portion near.
As each described insulated tectosome in the claim 4,6～20, it is characterized in that 38, above-mentioned heat insulation wall body is formed by insulating material.
39, a kind of heater is characterized in that, has each described insulated tectosome in a plurality of claims 2,4,6～20 that are accommodated in respectively in a plurality of mounting grooves, and these a plurality of mounting grooves vertically are formed on the above-mentioned heat insulation wall body.
40, a kind of heater is characterized in that, has each described insulated tectosome in the claim 2,4,6～20.
41, a kind of substrate board treatment is characterized in that,
Has the described heater of claim 40;
Also possess: process chamber, heated by this heater, handle processed substrate; Gas introduction tube imports to above-mentioned process chamber with gas; And blast pipe, with above-mentioned process chamber exhaust.
42, maintenance tectosome as claimed in claim 1 is characterized in that,
, bigger to the distance of the above-mentioned periphery of above-mentioned cylindrical portion from all sides in above-mentioned this heat insulation wall body above-mentioned than above-mentioned interior all sides from above-mentioned this heat insulation wall body to the distance of above-mentioned another part of the above-mentioned insulator of the inboard of the above-mentioned cylindrical portion that arrives above-mentioned heater.
43, insulated tectosome as claimed in claim 2 is characterized in that,
, littler to the distance of the periphery of above-mentioned cylindrical portion from the center of above-mentioned cylindrical portion than center from above-mentioned cylindrical portion to the distance of an end of the above-mentioned wall part of isolating the above-mentioned both ends of the inboard that will arrive above-mentioned cylindrical portion.
44, insulated tectosome as claimed in claim 3 is characterized in that,
, identical or littler to the distance of the periphery of above-mentioned cylindrical portion from the center of above-mentioned cylindrical portion than this distance with center from above-mentioned cylindrical portion to the distance of an end of the above-mentioned wall part of isolating the above-mentioned both ends of the inboard that will arrive above-mentioned cylindrical portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005277207A JP4820137B2 (en) | 2005-09-26 | 2005-09-26 | Heating element holding structure |
| JP277207/2005 | 2005-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1941278A CN1941278A (en) | 2007-04-04 |
| CN100452291C true CN100452291C (en) | 2009-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2006200066762U Expired - Lifetime CN2917150Y (en) | 2005-09-26 | 2006-03-31 | Keeping structure, insulation structure, and heating unit of heater |
| CNB2006100710805A Active CN100452291C (en) | 2005-09-26 | 2006-03-31 | Retainer tectosome, insulation tectosome and heating arrangement of heater |
Family Applications Before (1)
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| CNU2006200066762U Expired - Lifetime CN2917150Y (en) | 2005-09-26 | 2006-03-31 | Keeping structure, insulation structure, and heating unit of heater |
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| Country | Link |
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| JP (1) | JP4820137B2 (en) |
| KR (2) | KR100742451B1 (en) |
| CN (2) | CN2917150Y (en) |
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| JP4331768B2 (en) * | 2007-02-28 | 2009-09-16 | 東京エレクトロン株式会社 | Heat treatment furnace and vertical heat treatment equipment |
| US8395096B2 (en) | 2009-02-05 | 2013-03-12 | Sandvik Thermal Process, Inc. | Precision strip heating element |
| JP5529646B2 (en) * | 2010-06-25 | 2014-06-25 | 株式会社日立国際電気 | Heating apparatus, substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
| DE202009011719U1 (en) * | 2009-08-28 | 2010-10-21 | Eugen Forschner Gmbh | Device for contacting a heatable hose |
| JP5565188B2 (en) * | 2010-08-10 | 2014-08-06 | 東京エレクトロン株式会社 | Heater device |
| JP5686467B2 (en) * | 2010-10-15 | 2015-03-18 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| JP5802052B2 (en) | 2011-05-19 | 2015-10-28 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| JP5743746B2 (en) | 2011-06-27 | 2015-07-01 | 東京エレクトロン株式会社 | Heat treatment furnace and heat treatment apparatus |
| CN103484934A (en) * | 2012-06-11 | 2014-01-01 | 绿种子材料科技股份有限公司 | Vapor deposition device and heating system thereof |
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| US20030068437A1 (en) * | 1999-09-07 | 2003-04-10 | Genji Nakamura | Method and apparatus for forming insulating film containing silicon oxy-nitride |
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| JPH07253276A (en) * | 1994-03-16 | 1995-10-03 | Tokyo Electron Ltd | Heat treating furnace, and manufacture thereof |
| US5506389A (en) * | 1993-11-10 | 1996-04-09 | Tokyo Electron Kabushiki Kaisha | Thermal processing furnace and fabrication method thereof |
| US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
| JP2001208478A (en) * | 2000-01-31 | 2001-08-03 | Tokyo Electron Ltd | Thermal processor |
| JP4267506B2 (en) | 2001-01-11 | 2009-05-27 | 株式会社日立国際電気 | Plasma processing equipment |
| JP4350322B2 (en) * | 2001-04-27 | 2009-10-21 | 株式会社日立国際電気 | Heat treatment equipment |
| JP2004221102A (en) | 2003-01-09 | 2004-08-05 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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- 2005-09-30 KR KR1020050091919A patent/KR100742451B1/en active IP Right Grant
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| US20030068437A1 (en) * | 1999-09-07 | 2003-04-10 | Genji Nakamura | Method and apparatus for forming insulating film containing silicon oxy-nitride |
| US6444940B1 (en) * | 1999-11-30 | 2002-09-03 | Tokyo Electron Limited | Heat treating device and heat treating method |
| JP2003213432A (en) * | 2002-01-24 | 2003-07-30 | Shinko Seiki Co Ltd | Electrode for plasma cvd apparatus |
| JP2004039967A (en) * | 2002-07-05 | 2004-02-05 | Hitachi Kokusai Electric Inc | Semiconductor production apparatus |
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| CN2917150Y (en) | 2007-06-27 |
| KR100742451B1 (en) | 2007-07-25 |
| JP2007088324A (en) | 2007-04-05 |
| TW200723367A (en) | 2007-06-16 |
| JP4820137B2 (en) | 2011-11-24 |
| CN1941278A (en) | 2007-04-04 |
| KR20070034978A (en) | 2007-03-29 |
| KR100719307B1 (en) | 2007-05-18 |
| KR20070034911A (en) | 2007-03-29 |
| TWI308364B (en) | 2009-04-01 |
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Effective date of registration: 20190325 Address after: Tokyo, Japan, Japan Patentee after: International Electric Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Kunisai Electric Corp. |