JP2007088324A - Heating element holding structure, insulated structure, heating unit and substrate processing equipment - Google Patents

Heating element holding structure, insulated structure, heating unit and substrate processing equipment Download PDF

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JP2007088324A
JP2007088324A JP2005277207A JP2005277207A JP2007088324A JP 2007088324 A JP2007088324 A JP 2007088324A JP 2005277207 A JP2005277207 A JP 2005277207A JP 2005277207 A JP2005277207 A JP 2005277207A JP 2007088324 A JP2007088324 A JP 2007088324A
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pair
heating element
heat insulating
power feeding
cylindrical portion
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JP4820137B2 (en
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Hitoshi Murata
等 村田
Shinobu Sugiura
忍 杉浦
Tetsuya Kosugi
哲也 小杉
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Priority to JP2005277207A priority Critical patent/JP4820137B2/en
Priority to KR1020050091919A priority patent/KR100742451B1/en
Priority to TW095111194A priority patent/TWI308364B/en
Priority to CNU2006200066762U priority patent/CN2917150Y/en
Priority to CNB2006100710805A priority patent/CN100452291C/en
Priority to KR1020060127695A priority patent/KR100719307B1/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating element holding structure that prevents a pair of power feeding devices of the heating element from being short-circuited or deposited due to welding. <P>SOLUTION: This structure is composed of a heat insulating block 36 formed cylindrically by a heat insulating material, and a heating element 42 equipped with a pair of power feeding devices 45 and 46. In a heater unit with the heating element 42 at the inner side of a mounting groove 40 of the heat insulating block 36; a pair of power feeding devices 45 and 46 of the heating element 42 is held by an external insulator 52 and an inner insulator 55, and a partition wall 58 is built between the power feeding devices 45 and 46 of the inner insulator 55. In this way, even if the heating element 42 extends for heat expansion or deterioration with age, the partition wall 58 prevents a pair of power feeding devices 45 and 46 from contacting with each other, and consequently neither heating element short-circuit nor adhesion does not take place. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発熱体の保持構造体、絶縁構造体、加熱装置および基板処理装置に関し、特に、発熱体の一対の給電部を保持する技術に係り、例えば、半導体集積回路装置(以下、ICという。)が作り込まれる半導体ウエハ(以下、ウエハという。)に絶縁膜や金属製膜および半導体膜を堆積(デポジション)させるCVD装置、酸化膜形成装置、拡散装置、イオン打ち込み後のキャリア活性化や平坦化のためのリフローやアニール等の熱処理(thermal treatment )に使用される熱処理装置(furnace )等の半導体製造装置に利用して有効なものに関する。   The present invention relates to a heating element holding structure, an insulating structure, a heating apparatus, and a substrate processing apparatus, and more particularly to a technique for holding a pair of power feeding portions of a heating element, for example, a semiconductor integrated circuit device (hereinafter referred to as an IC). .) CVD apparatus, oxide film formation apparatus, diffusion apparatus, and carrier activation after ion implantation for depositing (depositing) an insulating film, a metal film, and a semiconductor film on a semiconductor wafer (hereinafter referred to as a wafer) The present invention relates to a semiconductor device that is effective for use in a semiconductor manufacturing apparatus such as a heat treatment apparatus (furnace) used for thermal treatment such as reflow or annealing for planarization or annealing.

ICの製造方法において、ウエハに成膜処理や拡散処理を施すのにバッチ式縦形ホットウオール形拡散・CVD装置が広く使用されている。
一般に、バッチ式縦形ホットウオール形拡散・CVD装置(以下、CVD装置という。)は、ウエハが搬入される処理室を形成するインナチューブおよびこのインナチューブを取り囲むアウタチューブから構成されて縦形に設置されたプロセスチューブと、被処理基板である複数枚のウエハを保持してインナチューブの処理室に搬入するボートと、インナチューブ内に原料ガスを導入するガス導入管と、プロセスチューブ内を排気する排気管と、プロセスチューブ外に設けられてプロセスチューブ内を加熱するヒータユニットとを備えている。
そして、複数枚のウエハがボートによって垂直方向に整列されて保持された状態でインナチューブ内に下端の炉口から搬入(ボートローディング)された後に、インナチューブ内に原料ガスがガス導入管から導入されるとともに、ヒータユニットによってプロセスチューブ内が加熱される。これにより、ウエハにCVD膜がデポジションされ、また、拡散処理が施される。
In an IC manufacturing method, a batch type vertical hot wall diffusion / CVD apparatus is widely used to perform a film forming process and a diffusion process on a wafer.
In general, a batch-type vertical hot wall type diffusion / CVD apparatus (hereinafter referred to as a CVD apparatus) is composed of an inner tube that forms a processing chamber into which a wafer is carried and an outer tube that surrounds the inner tube, and is installed vertically. A process tube, a boat that holds a plurality of wafers to be processed and carries them into the inner tube processing chamber, a gas introduction pipe that introduces a source gas into the inner tube, and an exhaust that exhausts the inside of the process tube And a heater unit that is provided outside the process tube and heats the inside of the process tube.
Then, after a plurality of wafers are held vertically aligned by the boat and loaded into the inner tube from the bottom furnace port (boat loading), the source gas is introduced into the inner tube from the gas introduction pipe At the same time, the inside of the process tube is heated by the heater unit. As a result, a CVD film is deposited on the wafer and a diffusion process is performed.

従来のこの種のCVD装置において、加熱装置であるヒータユニットは、アルミナやシリカ等の断熱材が使用されてバキュームフォーム(真空吸着成形)法によってプロセスチューブを全体的に被覆する長い円筒形状に形成された断熱壁体と、鉄−クロム−アルミニウム(Fe−Cr−Al)合金やモリブデンシリサイド(MoSi2 )が使用されて長大に形成された発熱体と、断熱壁体を被覆するケースとを備えており、発熱体が断熱壁体の内周に設けられて構成されている。 In a conventional CVD apparatus of this type, the heater unit, which is a heating apparatus, is formed into a long cylindrical shape that covers the entire process tube by a vacuum foam (vacuum adsorption molding) method using a heat insulating material such as alumina or silica. A heat-insulating wall body, a heating element formed of an iron-chromium-aluminum (Fe-Cr-Al) alloy or molybdenum silicide (MoSi 2 ), and a case covering the heat-insulating wall body. The heating element is provided on the inner periphery of the heat insulating wall.

このようなヒータユニットにおいて、例えば30℃/分以上の急速加熱を実施する場合には、発熱有効面積を大きくするために板形状に形成された発熱体が使用されている。
そして、この板形状の発熱体が使用される場合には、この発熱体に通電させるための給電部は、次のように構成されている。
板形状の発熱体の両端部が厚さ方向に直角に屈曲されて一対の給電部がそれぞれ形成され、この一対の給電部が断熱壁体を貫通し、この給電部の貫通部がさらに直角に屈曲され、この屈曲部に給電端子が接続される。この一対の給電部は発熱時の熱膨張によって暴れるのを防止するために、碍子によって保持されている。例えば、特許文献1参照。
特開2004−39967号公報
In such a heater unit, for example, when rapid heating at 30 ° C./min or more is performed, a heating element formed in a plate shape is used in order to increase the effective heat generation area.
And when this plate-shaped heat generating body is used, the electric power feeding part for energizing this heat generating body is comprised as follows.
Both ends of the plate-shaped heating element are bent at right angles in the thickness direction to form a pair of power feeding parts, respectively, and the pair of power feeding parts penetrates the heat insulating wall body, and the through part of the power feeding part is further perpendicular. The power supply terminal is connected to the bent portion. The pair of power feeding portions are held by an insulator to prevent the power feeding portion from being exposed to thermal expansion during heat generation. For example, see Patent Document 1.
JP 2004-39967 A

前記した発熱体の保持構造体においては、狭い方が加熱分布上有利になるために、発熱体の一対の給電部の間隔は狭く設定されることが多い。
しかしながら、発熱体の一対の給電部の間隔を狭く設定すると、発熱体の両端が近接する状態になる。
他方、発熱体は温度が上昇すると、熱膨張によって伸びる。また、発熱体は長期間使用されることによっても伸びる傾向がある。
そして、発熱体が伸びると、発熱体の両端の間隔が狭くなるために、発熱体の一対の給電部の間隔が狭くなり、終には接触することにより、電気的に短絡したり、温度が高い場合には互いに溶着したりしてしまう。
In the above-described heating element holding structure, since the narrower is more advantageous in terms of heating distribution, the interval between the pair of power feeding portions of the heating element is often set narrow.
However, when the interval between the pair of power feeding portions of the heating element is set to be narrow, both ends of the heating element are close to each other.
On the other hand, when the temperature rises, the heating element expands due to thermal expansion. Moreover, a heat generating body also tends to extend even if it is used for a long time.
When the heating element is extended, the distance between both ends of the heating element is narrowed, so that the distance between the pair of power feeding portions of the heating element is narrowed. If it is high, they will be welded together.

本発明の目的は、発熱体の短絡や溶着を防止し発熱体の寿命を延長することができる発熱体の保持構造体を提供することにある。
本発明の第二の目的は、発熱体の短絡や溶着を防止し発熱体の寿命を延長することができる絶縁構造体を提供することにある。
本発明の第三の目的は、発熱体の短絡や溶着を防止し発熱体の寿命を延長することができる加熱装置を提供することにある。
本発明の第四の目的は、発熱体の短絡や溶着を防止し発熱体の寿命を延長することができる基板処理装置を提供することにある。
An object of the present invention is to provide a heating element holding structure capable of preventing the heating element from being short-circuited or welded and extending the life of the heating element.
The second object of the present invention is to provide an insulating structure capable of preventing the heating element from being short-circuited or welded and extending the life of the heating element.
A third object of the present invention is to provide a heating device that can prevent the heating element from being short-circuited or welded and extend the life of the heating element.
A fourth object of the present invention is to provide a substrate processing apparatus capable of preventing the heating element from being short-circuited or welded and extending the life of the heating element.

前記した課題を解決するための手段のうち代表的なものは、次の通りである。
(1)基板処理装置に用いられる発熱体の保持構造体であって、
円筒形状に形成された断熱壁体と、
該断熱壁体の内周側に沿って円筒状に設けられた円筒部と、該円筒部の端部に前記断熱壁体を貫通するように設けられた一対の給電部とを有する発熱体と、
少なくとも一部が前記一対の給電部間に設けられるとともに、他の一部が前記円筒部の内周面を超えて円筒部の内側にまで達するように設けられた碍子とを有する発熱体の保持構造体。
(2)基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部間から前記円筒部の円周面上の位置を越えて前記円筒部の内側にまで達して前記一対の給電部間を隔離する隔壁部を有する絶縁構造体。
(3)基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部間から前記円筒部の円周面上の位置にまで達して前記一対の給電部間を隔離する隔壁部を有する絶縁構造体。
(4)前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体の2つの絶縁部材を有する前記(2)の絶縁構造体。
(5)前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体の2つの絶縁部材を有する前記(3)の絶縁構造体。
(6)前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体で前記断熱壁体の外側に設けられた外側絶縁部材を有する前記(2)(3)の絶縁構造体。
(7)前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記隔壁部を有し、前記断熱壁体とは別体で前記断熱壁体の内側に設けられた内側絶縁部材を有する前記(2)(3)の絶縁構造体。
(8)前記断熱壁体の内側に設けられた内側絶縁部材と、前記断熱壁体の外側に設けられた外側絶縁部材とを有する前記(4)(5)の絶縁構造体。
(9)前記絶縁部材が、前記断熱壁体よりも高い硬度を有する前記(4)(5)(6)(7)または(8)の絶縁構造体。
(10)前記絶縁部材が、前記断熱壁体よりも高い曲げ強度を有する前記(4)(5)(6)(7)(8)または(9)の絶縁構造体。
(11)基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられている給電部において、前記一対の給電部間を隔離するように、前記断熱壁体の外側に設けられた絶縁構造体。
(12)前記断熱壁体よりも高い硬度または曲げ強度または密度を有する前記(11)の絶縁構造体。
(13)基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部が前記円筒部の外周側に形成された断熱壁体を貫通するように設けられている給電部において、前記一対の給電部間を隔離するように前記断熱壁体の内側または外側に設けられた絶縁構造体であって、
前記断熱壁体よりも高い硬度または曲げ強度または密度を有する絶縁構造体。
(14)前記一対の給電部を保持するための一対の保持溝が設けられている前記(2)〜(13)のいずれかの絶縁構造体。
(15)前記保持溝が前記絶縁構造体の最上部または最下部に至るまで切欠くように形成された前記(14)の絶縁構造体。
(16)前記(2)〜(15)いずれかの絶縁構造体を有する加熱装置。
(17)前記(16)の加熱装置を有する基板処理装置。
(18)前記発熱体が、前記一対の給電部に接続され、前記断熱壁体の外側に設けられる一対の接続部を有する前記(1)の発熱体の保持構造体。
(19)前記発熱体が、前記一対の給電部に接続される一対の接続部を有する前記(2)または(3)の絶縁構造体。
(20)前記発熱体が、前記一対の給電部にそれぞれ接続され、前記断熱壁体の外側に設けられる一対の接続部を有する前記(4)〜(13)の絶縁構造体。
(21)前記(19)または(20)の絶縁構造体を有する加熱装置。
(22)前記(21)の加熱装置を有する基板処理装置。
Typical means for solving the above-described problems are as follows.
(1) A heating element holding structure used in a substrate processing apparatus,
A heat insulating wall formed in a cylindrical shape;
A heating element having a cylindrical portion provided in a cylindrical shape along the inner peripheral side of the heat insulating wall, and a pair of power feeding portions provided so as to penetrate the heat insulating wall at the end of the cylindrical portion; ,
Holding of a heating element having at least a part provided between the pair of power feeding parts and another part extending beyond the inner peripheral surface of the cylindrical part to reach the inside of the cylindrical part Structure.
(2) A heating element of a heating device used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power feeding portions provided at ends of the cylindrical portion, and the gap between the pair of power feeding portions. An insulating structure for isolation,
An insulating structure having a partition wall portion that separates the pair of power supply portions from between the pair of power supply portions to the inside of the cylindrical portion beyond a position on a circumferential surface of the cylindrical portion.
(3) The heating element of the heating device used in the substrate processing apparatus has a cylindrical cylindrical portion and a pair of power feeding portions provided at the ends of the cylindrical portion, and the gap between the pair of power feeding portions. An insulating structure for isolation,
An insulating structure having a partition wall that reaches between the pair of power feeding portions to a position on a circumferential surface of the cylindrical portion and isolates the pair of power feeding portions.
(4) A pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on an outer peripheral side of the cylindrical portion, and two insulating members separate from the heat insulating wall are provided. The insulating structure according to (2).
(5) A pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on an outer peripheral side of the cylindrical portion, and two insulating members separate from the heat insulating wall are provided. The insulating structure according to (3).
(6) A pair of power feeding portions of the heat generating body is provided so as to penetrate a heat insulating wall formed on the outer peripheral side of the cylindrical portion, and is separate from the heat insulating wall and separate from the heat insulating wall. (2) (3) Insulation structure which has the outer side insulation member provided in the outer side.
(7) A pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on an outer peripheral side of the cylindrical portion, has the partition wall, and is separate from the heat insulating wall. The insulating structure according to (2) or (3), further comprising an inner insulating member provided inside the heat insulating wall.
(8) The insulating structure according to (4) or (5), further including an inner insulating member provided inside the heat insulating wall and an outer insulating member provided outside the heat insulating wall.
(9) The insulating structure according to (4), (5), (6), (7), or (8), wherein the insulating member has a hardness higher than that of the heat insulating wall.
(10) The insulating structure according to (4), (5), (6), (7), (8), or (9), wherein the insulating member has higher bending strength than the heat insulating wall.
(11) A heating element of a heating device used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power feeding portions provided at ends of the cylindrical portion, and the gap between the pair of power feeding portions An insulating structure for isolation,
In the power feeding part provided so that the pair of power feeding parts penetrates the heat insulating wall formed on the outer peripheral side of the cylindrical part, the pair of power feeding parts is separated from the pair of power feeding parts. Insulation structure provided outside.
(12) The insulating structure according to (11), which has higher hardness, bending strength, or density than the heat insulating wall.
(13) A heating element of a heating device used in a substrate processing apparatus includes a cylindrical cylindrical portion and a pair of power supply portions provided at ends of the cylindrical portion, and the pair of power supply portions are An insulating structure provided inside or outside the heat insulating wall so as to isolate the pair of power supplying portions in a power supplying portion provided so as to penetrate the heat insulating wall formed on the outer peripheral side of the cylindrical portion Body,
An insulating structure having a higher hardness, bending strength, or density than the heat insulating wall.
(14) The insulating structure according to any one of (2) to (13), wherein a pair of holding grooves for holding the pair of power feeding units is provided.
(15) The insulating structure according to (14), wherein the holding groove is formed to be cut out to reach the uppermost part or the lowermost part of the insulating structure.
(16) A heating device having the insulating structure according to any one of (2) to (15).
(17) A substrate processing apparatus having the heating device of (16).
(18) The heat generating body holding structure according to (1), wherein the heat generating body includes a pair of connection portions connected to the pair of power feeding portions and provided outside the heat insulating wall body.
(19) The insulating structure according to (2) or (3), wherein the heating element has a pair of connection portions connected to the pair of power feeding portions.
(20) The insulating structure according to (4) to (13), wherein the heating element is connected to the pair of power feeding portions, and has a pair of connection portions provided outside the heat insulating wall body.
(21) A heating device having the insulating structure according to (19) or (20).
(22) A substrate processing apparatus having the heating device of (21).

前記した(1)の手段によれば、発熱体が熱膨張した場合であっても、一対の給電部が接触するのを防止することができるので、発熱体の短絡や溶着を未然に防止することができる。   According to the means (1) described above, even if the heating element is thermally expanded, it is possible to prevent the pair of power feeding portions from coming into contact with each other, so that the heating element is prevented from being short-circuited or welded. be able to.

以下、本発明の一実施の形態を図面に即して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

本実施の形態において、本発明に係る発熱体の保持構造体は、本発明に係る基板処理装置の一実施の形態であるCVD装置(バッチ式縦形ホットウオール形減圧CVD装置)に設置された本発明に係る加熱装置の一実施の形態であるヒータユニットに使用されている。   In the present embodiment, the heating element holding structure according to the present invention is a book installed in a CVD apparatus (batch type vertical hot wall type reduced pressure CVD apparatus) which is an embodiment of the substrate processing apparatus according to the present invention. It is used for the heater unit which is one embodiment of the heating device according to the invention.

本発明の基板処理装置の一実施の形態であるCVD装置は、図1に示されているように、垂直に配されて固定的に支持された縦形のプロセスチューブ11を備えており、プロセスチューブ11はアウタチューブ12とインナチューブ13とから構成されている。
アウタチューブ12は石英(SiO2 )が使用されて円筒形状に一体成形されており、インナチューブ13は石英(SiO2 )もしくは炭化シリコン(SiC)が使用されて円筒形状に一体成形されている。
アウタチューブ12は内径がインナチューブ13の外径よりも大きく上端が閉塞し下端が開口した円筒形状に形成されており、インナチューブ13にその外側を取り囲むように同心円に被せられている。
インナチューブ13は上下両端が開口した円筒形状に形成されており、インナチューブ13の筒中空部はボート22によって垂直方向に整列した状態に保持された複数枚のウエハが搬入される処理室14を形成している。インナチューブ13の下端開口はウエハを出し入れするための炉口15を構成している。
As shown in FIG. 1, a CVD apparatus according to an embodiment of a substrate processing apparatus of the present invention includes a vertical process tube 11 that is vertically arranged and fixedly supported. Reference numeral 11 denotes an outer tube 12 and an inner tube 13.
The outer tube 12 is integrally formed in a cylindrical shape using quartz (SiO 2 ), and the inner tube 13 is integrally formed in a cylindrical shape using quartz (SiO 2 ) or silicon carbide (SiC).
The outer tube 12 is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the inner tube 13 and closed at the upper end and opened at the lower end. The outer tube 12 is covered with a concentric circle so as to surround the outer side of the inner tube 13.
The inner tube 13 is formed in a cylindrical shape whose upper and lower ends are open, and the cylindrical hollow portion of the inner tube 13 has a processing chamber 14 into which a plurality of wafers held in a state of being vertically aligned by the boat 22 are loaded. Forming. The lower end opening of the inner tube 13 constitutes a furnace port 15 for taking in and out the wafer.

アウタチューブ12とインナチューブ13との間の下端部は、円形リング形状に形成されたマニホールド16によって気密封止されており、マニホールド16はインナチューブ13およびアウタチューブ12についての交換等のためにインナチューブ13およびアウタチューブ12にそれぞれ着脱自在に取り付けられている。
マニホールド16がCVD装置のヒータベース19に支持されることにより、プロセスチューブ11は垂直に据え付けられた状態になっている。
A lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 formed in a circular ring shape, and the manifold 16 is used for replacement of the inner tube 13 and the outer tube 12 for the purpose of replacement. Removably attached to the tube 13 and the outer tube 12, respectively.
Since the manifold 16 is supported by the heater base 19 of the CVD apparatus, the process tube 11 is vertically installed.

マニホールド16の側壁の上部には排気管17が接続されており、排気管17は排気装置(図示せず)に接続されて処理室14を所定の真空度に真空排気し得るように構成されている。排気管17はアウタチューブ12とインナチューブ13との間に形成された隙間に連通した状態になっており、アウタチューブ12とインナチューブ13との隙間によって排気路18が構成されている。排気路18は、横断面形状が一定幅の円形リング形状になっている。
排気管17がマニホールド16に接続されているため、排気管17は円筒形状の中空体を形成されて垂直方向に長く形成された排気路18の最下端部に配置された状態になっている。
An exhaust pipe 17 is connected to the upper part of the side wall of the manifold 16, and the exhaust pipe 17 is connected to an exhaust device (not shown) so that the processing chamber 14 can be evacuated to a predetermined degree of vacuum. Yes. The exhaust pipe 17 is in a state of communicating with a gap formed between the outer tube 12 and the inner tube 13, and an exhaust path 18 is configured by the gap between the outer tube 12 and the inner tube 13. The exhaust passage 18 has a circular ring shape with a constant cross-sectional shape.
Since the exhaust pipe 17 is connected to the manifold 16, the exhaust pipe 17 is formed in a cylindrical hollow body and is disposed at the lowermost end portion of the exhaust path 18 formed long in the vertical direction.

マニホールド16には下端開口を閉塞するシールキャップ20が、垂直方向下側から当接されるようになっている。シールキャップ20はアウタチューブ12の外径と略等しい円盤形状に形成されており、プロセスチューブ11の外部に設備されたボートエレベータ21(一部のみが図示されている。)によって垂直方向に昇降されるように構成されている。   A seal cap 20 that closes the lower end opening is brought into contact with the manifold 16 from the lower side in the vertical direction. The seal cap 20 is formed in a disk shape substantially equal to the outer diameter of the outer tube 12, and is lifted and lowered in the vertical direction by a boat elevator 21 (only a part of which is shown) provided outside the process tube 11. It is comprised so that.

シールキャップ20の中心線上には、被処理基板としてのウエハ1を保持するためのボート22が垂直に立脚されて支持されている。
ボート22は複数枚のウエハ1を水平にかつ互いに中心を揃えた状態に整列させて保持するようになっている。
On the center line of the seal cap 20, a boat 22 for holding the wafer 1 as a substrate to be processed is vertically supported and supported.
The boat 22 is configured to hold a plurality of wafers 1 so that the wafers 1 are aligned horizontally and aligned with each other.

シールキャップ20にはガス導入管23がインナチューブ13の炉口15に連通するように接続されており、ガス導入管23には原料ガス供給装置およびキャリアガス供給装置(いずれも図示せず)に接続されている。ガス導入管23から炉口15に導入されたガスは、インナチューブ13の処理室14内を流通して排気路18を通って排気管17から排気される。   A gas introduction pipe 23 is connected to the seal cap 20 so as to communicate with the furnace port 15 of the inner tube 13. The gas introduction pipe 23 is connected to a raw material gas supply device and a carrier gas supply device (both not shown). It is connected. The gas introduced from the gas introduction pipe 23 into the furnace port 15 flows through the processing chamber 14 of the inner tube 13, passes through the exhaust path 18, and is exhausted from the exhaust pipe 17.

アウタチューブ12の外部には、プロセスチューブ11の内部を加熱する本実施の形態に係る加熱装置であるヒータユニット30がアウタチューブ12の周囲を包囲するように同心円に設備されている。
ヒータユニット30はステンレス鋼(SUS)が使用されて上端閉塞で下端開口の円筒形状に形成されたケース31を備えており、ケース31の内径および全長はアウタチューブ12の外径および全長よりも大きく設定されている。
ケース31の内部には、アウタチューブ12の外径よりも大きい円筒形状の断熱壁体33が、アウタチューブ12と同心円に設置されている。断熱壁体33とケース31の内周面との間の隙間32は、空冷のための空間である。
Outside the outer tube 12, a heater unit 30, which is a heating device according to the present embodiment that heats the inside of the process tube 11, is installed concentrically so as to surround the outer tube 12.
The heater unit 30 includes a case 31 made of stainless steel (SUS) and having a cylindrical shape with a closed upper end and a lower end opening. The inner diameter and the full length of the case 31 are larger than the outer diameter and the full length of the outer tube 12. Is set.
A cylindrical heat insulation wall 33 larger than the outer diameter of the outer tube 12 is installed inside the case 31 concentrically with the outer tube 12. A gap 32 between the heat insulating wall 33 and the inner peripheral surface of the case 31 is a space for air cooling.

断熱壁体33はケース31の内径より小さい外径を有する円盤形状の天井壁部34と、アウタチューブ12の外径よりも大きい内径およびケース31の内径よりも小さい外径を有する円筒形状の側壁部35とを備えている。
天井壁部34は側壁部35の上端の開口を閉塞するように被せられており、天井壁部34の上端面はケース31の天井壁の下面に接するように設けられている。
なお、天井壁部34およびケース31の天井壁を貫通する排気口を設け、断熱壁体33とアウタチューブ12との間の雰囲気を強制空冷させるよう構成してもよい。
側壁部35の外径がケース31の内径よりも小さく設定されていることにより、側壁部35とケース31との間には空冷空間としての隙間32が形成されている。
なお、隙間32と断熱壁体33とアウタチューブ12との間の空間を貫通させるように断熱壁体33の側壁部35に貫通孔を設け、断熱壁体33とアウタチューブ12との間の雰囲気を強制空冷させるよう構成してもよい。
そして、断熱壁体33の側壁部35は断熱ブロック36が複数個、垂直方向に積み重ねられることで一つの筒体として構築されている。
The heat insulating wall 33 includes a disk-shaped ceiling wall 34 having an outer diameter smaller than the inner diameter of the case 31, and a cylindrical side wall having an inner diameter larger than the outer diameter of the outer tube 12 and an outer diameter smaller than the inner diameter of the case 31. Part 35.
The ceiling wall portion 34 is covered so as to close the opening at the upper end of the side wall portion 35, and the upper end surface of the ceiling wall portion 34 is provided in contact with the lower surface of the ceiling wall of the case 31.
In addition, you may comprise the exhaust port which penetrates the ceiling wall part 34 and the ceiling wall of case 31, and forcibly air-cooling the atmosphere between the heat insulation wall 33 and the outer tube 12.
By setting the outer diameter of the side wall portion 35 to be smaller than the inner diameter of the case 31, a gap 32 as an air cooling space is formed between the side wall portion 35 and the case 31.
A through hole is provided in the side wall portion 35 of the heat insulating wall 33 so as to penetrate the space between the gap 32, the heat insulating wall 33 and the outer tube 12, and the atmosphere between the heat insulating wall 33 and the outer tube 12 is provided. May be configured to be forced to air-cool.
And the side wall part 35 of the heat insulation wall 33 is constructed | assembled as one cylinder by stacking the several heat insulation block 36 in the orthogonal | vertical direction.

図1および図2に示されているように、断熱ブロック36は短尺の円筒形状であるドーナツ形状の本体37を備えており、本体37は繊維状または球状のアルミナやシリカ等の絶縁材(insulating material )としても機能する断熱材が使用されて、バキュームフォーム法の成形型によって一体成形されている。
なお、断熱ブロック36および本体37は円筒形状の円周方向に複数個に分割、例えば円筒形状を所定の角度にて複数個に分割した状態で成形し、その後、円筒形状に組み立てるようにしてもよい。
こうすると、断熱ブロック36にも遊び(動き易さ)が形成されるために、断熱ブロック36へ応力が加わったとしても割れ難くなる。好ましくは、四分割とするとサイズ的にもよい。
本体37の下端部には、結合雄部(凸部)38が本体37の内周の一部を円形リング形状に切り欠かれた状態に形成されている。本体37の上端部には、結合雌部(凹部)39が本体37の外周の一部を円形リング形状に切り欠かれた状態に形成されている。
また、本体37の上端の内周側には、内側方向に突き出た突出部37aが形成されている。
隣り合う上下の断熱ブロック36の突出部37aの間に、発熱体を取り付けるための取付溝(凹部)40が側壁部35の内周面を円形リング状に切り欠かれた状態となるように、一定深さ一定高さに形成されている。取付溝40はそれぞれの断熱ブロック36に対し一つずつ形成されており、一つの閉じた円形状となっている。
取付溝40の内周面には、図3(b)に示されているように、発熱体を位置決め保持するための鎹(かすがい)形状の保持具41が複数個、周方向に略等間隔に取り付けられている。
As shown in FIG. 1 and FIG. 2, the heat insulating block 36 includes a doughnut-shaped main body 37 having a short cylindrical shape, and the main body 37 is an insulating material such as fibrous or spherical alumina or silica (insulating). A heat insulating material that also functions as a material) is used, and is integrally formed by a vacuum foam method mold.
The heat insulating block 36 and the main body 37 are divided into a plurality of cylinders in the circumferential direction. For example, the heat insulating block 36 and the main body 37 are molded in a state where the cylinder is divided into a plurality of parts at a predetermined angle, and then assembled into a cylinder. Good.
In this case, since play (ease of movement) is also formed in the heat insulating block 36, it is difficult to break even if stress is applied to the heat insulating block 36. Preferably, the size may be divided into four.
At the lower end of the main body 37, a coupling male part (convex part) 38 is formed in a state where a part of the inner periphery of the main body 37 is cut out into a circular ring shape. A coupling female portion (concave portion) 39 is formed on the upper end portion of the main body 37 in a state where a part of the outer periphery of the main body 37 is cut out into a circular ring shape.
In addition, a protruding portion 37 a protruding inward is formed on the inner peripheral side of the upper end of the main body 37.
Between the protrusions 37a of the adjacent upper and lower heat insulation blocks 36, an attachment groove (concave part) 40 for attaching a heating element is in a state where the inner peripheral surface of the side wall part 35 is cut out in a circular ring shape. It is formed at a certain depth and a certain height. One mounting groove 40 is formed for each heat insulating block 36 and has one closed circular shape.
On the inner peripheral surface of the mounting groove 40, as shown in FIG. 3B, there are a plurality of scissors-shaped holders 41 for positioning and holding the heating element. Attached to the interval.

発熱体42にはFe−Cr−Al合金やMOSi2 およびSiC等の抵抗発熱材料が使用される。発熱体42は、図3(a)に示されているように、波形の平板形状をしている。また、上側波部42aと上側隙間43aおよび下側波部42bと下側隙間43bがそれぞれ交互に形成されている。これらはプレス加工やレーザ切断加工等によって一体成形される。
発熱体42は断熱ブロック36の内周に沿って、円形リング形状に設けられている。発熱体42が形成する円形リング形状の外径は、断熱ブロック36の取付溝40の内径(内周面の直径)よりも若干だけ小径である。
以上述べたように、円形リング形状をした発熱体42の円筒部51が形成される。
図1〜図3に示されているように、発熱体42の円筒部51は断熱ブロック36の取付溝40毎に設けられている。その上下段には隣り合う他の発熱体42の円筒部51が隔離されて設けられている。
図3(a)(b)に示されているように、複数個の保持具41、41が上側隙間43aの下端から下側隙間43bの上端に跨がるように配置され、断熱ブロック36に挿入される。このようにして、取付溝40の内周面から離間された状態で発熱体42は保持されている。
図2および図3に示されているように、発熱体42の円筒部51の両端部44、44には一対の給電部45、46が、円形リング形状の円周方向と直角であって半径方向外向きにそれぞれ屈曲されて形成されている。一対の給電部45、46の先端部には一対の接続部47、48が互いに逆方向となるように、給電部45、46と直角にそれぞれ屈曲されて形成されている。
一対の給電部45、46における発熱量の低下を抑制するために、一対の給電部45、46の間隔は小さく設定されている。
好ましくは、一対の給電部45、46が円形リング形状の円周方向から半径方向外向きの直角にそれぞれ屈曲される箇所は、発熱体42の上側波部42aの最上部付近もしくは下側波部42bの最下部付近とするとよい。
こうすることにより、発熱体42を一対の給電部45、46にさらに隙間なく敷き詰めることができる。
For the heating element 42, a resistance heating material such as Fe—Cr—Al alloy, MOSi 2 and SiC is used. As shown in FIG. 3A, the heating element 42 has a corrugated flat plate shape. Moreover, the upper side wave part 42a and the upper side clearance 43a, and the lower side wave part 42b and the lower side clearance 43b are formed alternately. These are integrally formed by pressing or laser cutting.
The heating element 42 is provided in a circular ring shape along the inner periphery of the heat insulating block 36. The outer diameter of the circular ring shape formed by the heating element 42 is slightly smaller than the inner diameter (the diameter of the inner peripheral surface) of the mounting groove 40 of the heat insulating block 36.
As described above, the cylindrical portion 51 of the heating element 42 having a circular ring shape is formed.
As shown in FIGS. 1 to 3, the cylindrical portion 51 of the heating element 42 is provided for each mounting groove 40 of the heat insulating block 36. On the upper and lower stages, cylindrical portions 51 of other adjacent heating elements 42 are provided separately.
As shown in FIGS. 3 (a) and 3 (b), a plurality of holders 41, 41 are arranged so as to straddle from the lower end of the upper gap 43a to the upper end of the lower gap 43b. Inserted. Thus, the heating element 42 is held in a state of being separated from the inner peripheral surface of the mounting groove 40.
As shown in FIGS. 2 and 3, a pair of power feeding portions 45, 46 are provided at both ends 44, 44 of the cylindrical portion 51 of the heating element 42, which are perpendicular to the circumferential direction of the circular ring shape and have a radius. Each of them is bent outward in the direction. A pair of connecting portions 47 and 48 are formed at the distal ends of the pair of power feeding portions 45 and 46, respectively, so as to be bent at right angles to the power feeding portions 45 and 46 so as to be opposite to each other.
In order to suppress a decrease in the amount of heat generated in the pair of power supply units 45 and 46, the interval between the pair of power supply units 45 and 46 is set small.
Preferably, the portions where the pair of power feeding portions 45 and 46 are bent from the circumferential direction of the circular ring shape at right angles outward in the radial direction are near the uppermost portion of the upper wave portion 42a of the heating element 42 or the lower wave portion. It is good to be near the lowermost part of 42b.
By doing so, the heating element 42 can be spread over the pair of power feeding portions 45 and 46 without any gap.

一対の給電部45、46の位置に対応する円筒形状の断熱ブロック36には、一対の挿通溝49、50がそれぞれ形成されている。両挿通溝49、50は取付溝40側から円筒形状の径方向に本体37の外周側にかけて達するように形成される。両給電部45、46の両挿通溝49、50にそれぞれ挿通されている。
なお、挿通溝49、50は両給電部45、46が挿通される前は、両挿通溝49、50の間をも含め、両挿通溝49、50が一つの挿通溝となるように形成しておき、両給電部45、46を挿通後に、両給電部45、46間に繊維状または球状のアルミナやシリカ等の絶縁材としても機能する断熱材を埋めることで、断熱壁体33および挿通溝49、50を形成してもよい。
本体37の外周面における両挿通溝49、50の部分には、絶縁構造体の一例である外側絶縁部材としての碍子(以下、外側碍子という。)52が設けられている。
外側碍子52は絶縁構造体の一例であり、アルミナやシリカ等の耐熱性を有する絶縁材としてのセラミックが使用されて、焼結法等の適当な製法により、断熱ブロック36よりも硬度、曲げ強度および密度を高くすることができる。例えば、外側碍子52は断熱ブロック36よりアルミナ成分の含有率を高くすることで硬度、曲げ強度、密度を高くすることができる。
図4(a)に示されているように、外側碍子52は略正方形であって、断熱ブロック36の外周面の曲面に対応するような若干の曲面R1を持つ平盤形状に一体成形されており、本体37の外周面に固定されている。
外側碍子52は、少なくとも断熱ブロック36と同等以上の硬度、同等以上の曲げ強度および同等以上の密度を備えている。
なお、好ましくは、外側碍子52の硬度を、断熱ブロック36の硬度よりも高くすると、効果的に発熱体42の暴れを抑止することができる。
また、好ましくは、外側碍子52の曲げ強度および/または密度を断熱ブロック36の曲げ強度および/または密度よりも高くすると、効果的に発熱体42の暴れを抑止することができる。
外側碍子52の上部には、一対の給電部を挿通するための挿通部としての一対の保持溝53、54がそれぞれ形成されている。両保持溝53、54の位置は、両挿通溝49、50の位置に対応させ、略同位置となるようにしている。両保持溝53、54には両挿通溝49、50に挿通された両給電部45、46がそれぞれ挿通されて保持されている。
好ましくは、図4(a)に示されているように、保持溝53、54は外側碍子52の最上部に至るまで切欠くように形成するとよい。一対の給電部を設置した後に、外側碍子52を取付けたり、交換することが可能となるからである。但し、保持溝53、54は外側碍子52の最上部まで切欠かずに孔形状で形成することもできる。
外側碍子52の両保持溝53、54は、発熱体42の給電部45、46を保持することにより、発熱体42の暴れを抑えることができる。両保持溝53、54の間隔は本体37の両挿通溝49、50の間隔に対応させて、同じ間隔としている。
ここで、発熱体42の暴れとは、発熱体42に給電することにより発熱体42が熱膨張を起こしたり、給電を止めることにより熱収縮を起こしたりして、本来配置されている位置からずれたり、移動したり、捩じれたりするように動く現象のことをいう。
A pair of insertion grooves 49 and 50 are respectively formed in the cylindrical heat insulating block 36 corresponding to the positions of the pair of power feeding portions 45 and 46. Both insertion grooves 49 and 50 are formed so as to reach the outer peripheral side of the main body 37 in the radial direction of the cylindrical shape from the mounting groove 40 side. The feeding grooves 45 and 46 are inserted into the insertion grooves 49 and 50, respectively.
The insertion grooves 49 and 50 are formed so that both the insertion grooves 49 and 50 become a single insertion groove, including between both the insertion grooves 49 and 50, before the both feeding portions 45 and 46 are inserted. In addition, after inserting both the power feeding portions 45 and 46, the heat insulating wall 33 and the insertion are inserted by filling a heat insulating material that also functions as an insulating material such as fibrous or spherical alumina or silica between the power feeding portions 45 and 46. Grooves 49 and 50 may be formed.
An insulator (hereinafter referred to as an outer insulator) 52 as an outer insulating member, which is an example of an insulating structure, is provided at both insertion grooves 49 and 50 on the outer peripheral surface of the main body 37.
The outer insulator 52 is an example of an insulating structure, and a ceramic as a heat-resistant insulating material such as alumina or silica is used, and the hardness and bending strength are higher than those of the heat insulating block 36 by an appropriate manufacturing method such as a sintering method. And the density can be increased. For example, the outer insulator 52 can have higher hardness, bending strength, and density by increasing the content of the alumina component than the heat insulating block 36.
As shown in FIG. 4A, the outer insulator 52 is substantially square, and is integrally formed in a flat plate shape having a slight curved surface R1 corresponding to the curved surface of the outer peripheral surface of the heat insulating block 36. And is fixed to the outer peripheral surface of the main body 37.
The outer insulator 52 has at least a hardness equal to or higher than that of the heat insulating block 36, a bending strength equal to or higher than that of the heat insulating block 36, and a density equal to or higher than that.
Preferably, when the hardness of the outer insulator 52 is higher than the hardness of the heat insulating block 36, the ramping of the heating element 42 can be effectively suppressed.
Preferably, when the bending strength and / or density of the outer insulator 52 is made higher than the bending strength and / or density of the heat insulating block 36, the rampage of the heating element 42 can be effectively suppressed.
A pair of holding grooves 53 and 54 are formed in the upper part of the outer insulator 52 as insertion parts for inserting a pair of power feeding parts. The positions of both holding grooves 53 and 54 correspond to the positions of both insertion grooves 49 and 50 so as to be substantially the same position. Both power feeding portions 45 and 46 inserted into both insertion grooves 49 and 50 are inserted and held in both holding grooves 53 and 54, respectively.
Preferably, as shown in FIG. 4A, the holding grooves 53 and 54 are formed so as to be cut out to reach the uppermost part of the outer insulator 52. This is because it is possible to attach or replace the outer insulator 52 after installing the pair of power feeding units. However, the holding grooves 53 and 54 can be formed in a hole shape without being cut out to the uppermost part of the outer insulator 52.
Both holding grooves 53, 54 of the outer insulator 52 hold the power feeding portions 45, 46 of the heating element 42, so that the ramping of the heating element 42 can be suppressed. The distance between the holding grooves 53 and 54 is the same as the distance between the both insertion grooves 49 and 50 of the main body 37.
Here, the rampage of the heating element 42 means that the heating element 42 undergoes thermal expansion by supplying power to the heating element 42, or thermal contraction by stopping power supply. It is a phenomenon that moves like moving, twisting or twisting.

取付溝40の内周面における両挿通溝49、50に対応する部位には、絶縁構造体の一例である内側絶縁部材としての碍子(以下、内側碍子という。)55が当接されて固定されている。
内側碍子55は絶縁構造体の一例であり、アルミナやシリカ等の耐熱性を有する絶縁材としてのセラミックが使用されて、焼結法等の適当な製法により、断熱ブロック36よりも硬度、曲げ強度および密度を高くすることができる。例えば、内側碍子55は断熱ブロック36よりアルミナの成分の含有率を高くすることで、硬度、曲げ強度、密度を高くすることができる。
図4(b)に示されているように内側碍子55は略正方形であって、断熱ブロック36の取付溝40の内周面の曲面に対応するような若干の曲面R2を持つ平盤形状に一体成形されている。
内側碍子55は、少なくとも断熱ブロック36と同等以上の硬度および同等以上の曲げ強度および同等以上の密度が備えられている。
なお、好ましくは、内側碍子55の硬度を断熱ブロック36の硬度よりも高くすると、効果的に発熱体42の暴れを抑止することができる。
また、好ましくは、内側碍子55の曲げ強度および/または密度を断熱ブロック36の曲げ強度および/または密度よりも高くすると、効果的に発熱体42の暴れを抑止することができる。
内側碍子55の上部には、一対の給電部を挿通するための挿通部としての一対の保持溝56、57がそれぞれ形成されている。両保持溝56、57の位置は、両挿通溝49、50の位置に対応させ、略同位置となるようにしている。両保持溝56、57には両挿通溝49、50に挿通された両給電部45、46がそれぞれ挿通されて保持されている。
好ましくは、図4(b)に示されているように、保持溝56、57は内側碍子55の最上部に至るまで切欠くように形成するとよい。一対の給電部45、46を設置した後に内側碍子55を取り付けたり、交換することが可能となるからである。但し、保持溝56、57は内側碍子55の最上部まで切欠かずに孔形状で形成することもできる。
内側碍子55の両保持溝56、57は、発熱体42の給電部45、46を保持することにより発熱体42の暴れを抑えることができる。両保持溝56、57の間隔は本体37の挿通溝49、50に対応させ、同じ間隔としている。
内側碍子55の内側端面(断熱ブロック36と反対側の端面すなわち発熱体42の円筒部51側の端面)には、両保持溝56、57の間に、発熱体42の一対の給電部45、46および円筒部51を隔てる隔壁部58が設けられている。隔壁部58は取付溝40の内周面に当接し固定した際に、少なくとも発熱体42の円筒部51の内周面上の位置まで設けられる厚さ(t)になっている。
好ましくは、図2に示されているように、隔壁部58は取付溝40の内周面に接するように設け固定した際に、発熱体42の円筒部51の内周面上を越えて円筒部51の内側まで設けられる厚さ(t)とするとよい。このようにすることにより、効果的に発熱体42の一対の給電部45、46および円筒部51を隔てることができる。
また、隔壁部58の高さ(h)は、取付溝40の内周面に当接し固定した際に、少なくとも、発熱体42の板幅と同等以上の値ないし寸法(h)とされている。また、発熱体42の一対の給電部45、46を隔てるように一対の給電部45、46を同じ高さの位置に設置できるように、両保持溝56、57と同じ高さ位置に設けられている。
好ましくは、隔壁部58の高さ(h)は、図3(a)に示されるように、取付溝40の内周面に接するように設け固定した際に、発熱体42の円筒部51の上側波部42aの最上部の高さと下側波部42bの最下部の高さとの間の値(h1)より大きくするとよい。このようにすることにより、一対の給電部45、46および円筒部51を効果的に隔てることができる。
隔壁部58は内側碍子55の内側端面から両側に曲部R3を形成させて設けられている。この曲部R3が設けられることにより、内側碍子55を成形し易くできるとともに、内側碍子55の強度が増し、発熱体42の円筒部51が膨張し、伸び、隔壁部58と接触しても内側碍子55が割れたりし難くなる。
なお、曲部R3は曲面形状とするのみならず、平坦面から成るテーパ形状としてもよい。
An insulator (hereinafter referred to as an inner insulator) 55 as an inner insulating member, which is an example of an insulating structure, is brought into contact with and fixed to portions corresponding to both the insertion grooves 49 and 50 on the inner peripheral surface of the mounting groove 40. ing.
The inner insulator 55 is an example of an insulating structure, and a ceramic as a heat-resistant insulating material such as alumina or silica is used, and the hardness and bending strength are higher than those of the heat insulating block 36 by an appropriate manufacturing method such as a sintering method. And the density can be increased. For example, the inner insulator 55 can have higher hardness, bending strength, and density by increasing the content of the alumina component than the heat insulating block 36.
As shown in FIG. 4B, the inner insulator 55 is substantially square and has a flat plate shape having a slight curved surface R2 corresponding to the curved surface of the inner peripheral surface of the mounting groove 40 of the heat insulating block 36. It is integrally molded.
The inner insulator 55 has at least a hardness equal to or higher than that of the heat insulating block 36, a bending strength equal to or higher than that of the heat insulating block 36, and a density equal to or higher than that.
Preferably, when the hardness of the inner insulator 55 is higher than the hardness of the heat insulating block 36, the rampage of the heating element 42 can be effectively suppressed.
Preferably, if the bending strength and / or density of the inner insulator 55 is higher than the bending strength and / or density of the heat insulating block 36, the ramping of the heating element 42 can be effectively suppressed.
A pair of holding grooves 56 and 57 are formed in the upper part of the inner insulator 55 as insertion parts for inserting a pair of power feeding parts. The positions of both holding grooves 56 and 57 correspond to the positions of both insertion grooves 49 and 50 so as to be substantially the same position. Both power feeding portions 45 and 46 inserted into the both insertion grooves 49 and 50 are inserted and held in the both holding grooves 56 and 57, respectively.
Preferably, as shown in FIG. 4B, the holding grooves 56 and 57 are formed so as to be cut out to reach the uppermost part of the inner insulator 55. This is because the inner insulator 55 can be attached or exchanged after the pair of power feeding portions 45 and 46 are installed. However, the holding grooves 56 and 57 can be formed in a hole shape without being cut out to the uppermost part of the inner insulator 55.
Both holding grooves 56 and 57 of the inner insulator 55 can suppress the ramping of the heating element 42 by holding the power feeding portions 45 and 46 of the heating element 42. The interval between the holding grooves 56 and 57 is made to correspond to the insertion grooves 49 and 50 of the main body 37 and is the same interval.
On the inner end surface of the inner insulator 55 (the end surface opposite to the heat insulating block 36, that is, the end surface on the cylindrical portion 51 side of the heating element 42), a pair of power feeding portions 45 of the heating element 42 between the holding grooves 56, 57, A partition wall 58 is provided to separate 46 and the cylindrical portion 51. The partition wall 58 has a thickness (t) that is provided at least up to a position on the inner peripheral surface of the cylindrical portion 51 of the heating element 42 when abutting and fixing to the inner peripheral surface of the mounting groove 40.
Preferably, as shown in FIG. 2, when the partition wall portion 58 is provided and fixed so as to be in contact with the inner peripheral surface of the mounting groove 40, it extends beyond the inner peripheral surface of the cylindrical portion 51 of the heating element 42 into a cylinder. It is good to set it as the thickness (t) provided to the inside of the part 51. By doing in this way, a pair of electric power feeding parts 45 and 46 and the cylindrical part 51 of the heat generating body 42 can be effectively separated.
The height (h) of the partition wall 58 is set to a value or dimension (h) that is at least equal to or greater than the plate width of the heating element 42 when abutting and fixing to the inner peripheral surface of the mounting groove 40. . Further, the pair of power feeding portions 45, 46 are provided at the same height as the holding grooves 56, 57 so that the pair of power feeding portions 45, 46 can be placed at the same height so as to separate the pair of power feeding portions 45, 46 of the heating element 42. ing.
Preferably, the height (h) of the partition wall portion 58 is such that the cylindrical portion 51 of the heating element 42 has a height (h) when it is provided and fixed so as to contact the inner peripheral surface of the mounting groove 40 as shown in FIG. It may be larger than the value (h1) between the height of the uppermost portion of the upper side wave portion 42a and the height of the lowermost portion of the lower side wave portion 42b. By doing in this way, a pair of electric power feeding parts 45 and 46 and the cylindrical part 51 can be separated effectively.
The partition wall portion 58 is provided with curved portions R3 formed on both sides from the inner end surface of the inner insulator 55. By providing the curved portion R3, the inner insulator 55 can be easily formed, the strength of the inner insulator 55 is increased, the cylindrical portion 51 of the heating element 42 expands and extends, and the inner insulator 55 is in contact with the partition wall 58. The insulator 55 is difficult to break.
Note that the curved portion R3 is not limited to a curved shape, and may be a tapered shape including a flat surface.

図2および図3に示されているように、上段側の発熱体42の一方の接続部(以下、プラス側接続部という。)47には給電端子61が溶接されており、他方の接続部(以下、マイナス側接続部という。)48には渡り線62の上端部が溶接されている。渡り線62の下端部は下段側の発熱体42のプラス側接続部47に接続されている。
したがって、下段側の発熱体42のプラス側接続部47は上段側の発熱体42のマイナス側接続部48の真下付近に位置しており、その分だけ下段側の発熱体42の円筒部51の両端部44、44は上段側の発熱体42の円筒部51の両端部44、44よりも周方向にずれた状態になっている。
渡り線62はこの渡り線62の表面からの放熱を小さく抑制するために、Fe−Cr−Al合金やMOSi2 およびSiC等の抵抗発熱材料が使用されて、断面が円形の丸棒形状に形成されている。但し、渡り線の電流容量の都合によっては、渡り線62は断面が四角形の角棒形状に形成してもよい。
As shown in FIGS. 2 and 3, a power supply terminal 61 is welded to one connecting portion (hereinafter referred to as a positive connecting portion) 47 of the upper heating element 42, and the other connecting portion. (Hereinafter, it is referred to as a minus side connecting portion.) 48 is welded to the upper end portion of the crossover wire 62. The lower end portion of the crossover 62 is connected to the plus side connecting portion 47 of the lower heating element 42.
Therefore, the plus side connecting portion 47 of the lower heating element 42 is located immediately below the minus connecting portion 48 of the upper heating element 42, and the cylindrical portion 51 of the lower heating element 42 is correspondingly increased. Both end portions 44, 44 are shifted in the circumferential direction from both end portions 44, 44 of the cylindrical portion 51 of the upper heating element 42.
The crossover wire 62 is formed in a round bar shape with a circular cross section using a resistance heating material such as Fe—Cr—Al alloy, MOSi 2 and SiC in order to suppress heat dissipation from the surface of the crossover wire 62 to a small extent. Has been. However, depending on the current capacity of the connecting wire, the connecting wire 62 may be formed in a square bar shape with a square cross section.

図2および図5に示されているように、ヒータユニット30のケース31の外周面における給電端子61の設置場所に対応する位置には、両接続部47、48や渡り線62を被覆する端子ケース63が被せ付けられており、端子ケース63の内部にはガラスウール等の断熱材64が充填されている。端子ケース63には複数個の給電端子61が絶縁碍子65を介して挿入されている。   As shown in FIGS. 2 and 5, terminals that cover both the connecting portions 47 and 48 and the crossover wire 62 are located at positions corresponding to the installation locations of the power supply terminals 61 on the outer peripheral surface of the case 31 of the heater unit 30. A case 63 is covered, and the inside of the terminal case 63 is filled with a heat insulating material 64 such as glass wool. A plurality of power supply terminals 61 are inserted into the terminal case 63 via insulators 65.

次に、前記構成に係るCVD装置によるIC等の半導体装置の製造方法における成膜工程を簡単に説明する。   Next, a film forming process in a method for manufacturing a semiconductor device such as an IC using the CVD apparatus according to the above configuration will be briefly described.

図1に示されているように、複数枚のウエハ1がボート22に装填(ウエハチャージ)されると、複数枚のウエハ1を保持したボート22は、ボートエレベータ21によって持ち上げられて処理室14に搬入(ボートローディング)される。
この状態で、シールキャップ20はマニホールド16の下端開口をシールした状態となる。
As shown in FIG. 1, when a plurality of wafers 1 are loaded (wafer charging) into the boat 22, the boat 22 holding the plurality of wafers 1 is lifted by the boat elevator 21 and processed in the processing chamber 14. Is loaded (boat loading).
In this state, the seal cap 20 is in a state where the lower end opening of the manifold 16 is sealed.

プロセスチューブ11の内部が所定の圧力(真空度)となるように排気管17を介して真空排気される。
また、プロセスチューブ11の内部が所定の温度となるようにヒータユニット30によって加熱される。この際、処理室14内が所定の温度分布となるように、温度センサ24が検出した温度情報に基づきヒータユニット30の発熱体42への通電具合がフィードバック制御される。
続いて、ボート22が回転機構25によって回転されることにより、ウエハ1が回転される。
The process tube 11 is evacuated through an exhaust pipe 17 so that the inside of the process tube 11 has a predetermined pressure (degree of vacuum).
In addition, the inside of the process tube 11 is heated by the heater unit 30 so as to reach a predetermined temperature. At this time, the state of energization to the heating element 42 of the heater unit 30 is feedback controlled based on the temperature information detected by the temperature sensor 24 so that the inside of the processing chamber 14 has a predetermined temperature distribution.
Subsequently, when the boat 22 is rotated by the rotation mechanism 25, the wafer 1 is rotated.

次いで、所定の流量に制御された原料ガスが、処理室14内へガス導入管23を通じて導入される。
導入された原料ガスは処理室14内を上昇し、インナーチューブ13の上端開口から排気路18に流出して排気管17から排気される。
原料ガスは処理室14内を通過する際にウエハ1の表面と接触し、この際に、熱CVD反応によってウエハ1の表面上に薄膜が堆積(デポジション)される。
Next, the raw material gas controlled to a predetermined flow rate is introduced into the processing chamber 14 through the gas introduction pipe 23.
The introduced source gas rises in the processing chamber 14, flows out from the upper end opening of the inner tube 13 to the exhaust path 18, and is exhausted from the exhaust pipe 17.
The source gas contacts the surface of the wafer 1 as it passes through the processing chamber 14. At this time, a thin film is deposited on the surface of the wafer 1 by a thermal CVD reaction.

予め設定された処理時間が経過すると、不活性ガス供給源(図示せず)から不活性ガスが供給され、処理室14内が不活性ガスに置換されるとともに、処理室14内の圧力が常圧に復帰される。   When a preset processing time elapses, an inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 14 is replaced with the inert gas, and the pressure in the processing chamber 14 is constantly maintained. Return to pressure.

その後、ボートエレベータ21によりシールキャップ20が下降されて、マニホールド16の下端が開口されるとともに、処理済のウエハ1がボート22に保持された状態で、マニホールド16の下端からプロセスチューブ11の外部に搬出(ボートアンローディング)される。
その後に、処理済のウエハ1はボート22から取り出される(ウエハディスチャージ)。
Thereafter, the seal cap 20 is lowered by the boat elevator 21, the lower end of the manifold 16 is opened, and the processed wafer 1 is held by the boat 22, so that the lower end of the manifold 16 is placed outside the process tube 11. Unload (boat unloading).
Thereafter, the processed wafer 1 is taken out from the boat 22 (wafer discharge).

ところで、ヒータユニット30の発熱体42は温度が上昇すると、熱膨張によって伸びる。また、発熱体42は長期間使用されることによっても伸びる傾向がある。
例えば、図6(a)に示されているように、発熱体42の一対の給電部45、46の間隔は狭く設定されているために、発熱体42が伸びると、一対の給電部45、46の間隔が狭くなり、終には接触することにより、電気的に短絡したり、温度が高い場合には互いに溶着してしまう可能性がある。
特に、図3(a)(b)に示すように、給電部付近では、挿通溝49、50や内側碍子55を設ける必要があるため、保持具41を発熱体42の円筒部51を保持するようにうまく配置できないため、発熱体42が円周方向に伸び易くなってしまうので、前述のような問題が起こり易い。
また、保持具41が発熱体42の暴れによって、割れたり断熱ブロック36から抜けたり円筒部51の円周方向にずれたりしてしまうことがある。この場合も、一対の給電部45、46の間隔が狭くなり、終には接触することにより電気的に短絡したり温度が高い場合には、互いに溶着してしまう可能性がある。
しかし、本実施の形態においては、一対の給電部45、46が外側碍子52および内側碍子55によって互いに絶縁された状態で保持されているとともに、内側碍子55において両給電部45、46の間および円筒部51より半径方向内側に隔壁部58が設けられているので、図6(b)に示されているように、発熱体42が伸びた場合であっても、一対の給電部45、46同士および円筒部51が接触するのを防止することができ、発熱体42の短絡や溶着を未然に防止することができる。
By the way, when the temperature rises, the heating element 42 of the heater unit 30 expands due to thermal expansion. Further, the heating element 42 tends to be extended even when used for a long time.
For example, as shown in FIG. 6A, since the distance between the pair of power feeding portions 45 and 46 of the heating element 42 is set narrow, when the heating element 42 extends, When the interval of 46 becomes narrow and contacts at the end, it may be electrically short-circuited or welded to each other when the temperature is high.
In particular, as shown in FIGS. 3A and 3B, it is necessary to provide the insertion grooves 49 and 50 and the inner insulator 55 in the vicinity of the power feeding portion, so that the holder 41 holds the cylindrical portion 51 of the heating element 42. Thus, since the heating element 42 is likely to extend in the circumferential direction, the above-described problem is likely to occur.
In addition, the holder 41 may be cracked, come out of the heat insulating block 36, or may be displaced in the circumferential direction of the cylindrical portion 51 due to the rampage of the heating element 42. Also in this case, the distance between the pair of power feeding portions 45 and 46 is narrowed, and when they are finally contacted, they may be electrically short-circuited or welded to each other when the temperature is high.
However, in the present embodiment, the pair of power feeding portions 45 and 46 are held in a state of being insulated from each other by the outer insulator 52 and the inner insulator 55, and between the power feeding portions 45 and 46 in the inner insulator 55 and Since the partition wall portion 58 is provided radially inward from the cylindrical portion 51, as shown in FIG. 6B, even when the heating element 42 is extended, the pair of power feeding portions 45, 46 is provided. It is possible to prevent the cylinder portions 51 and the cylindrical portions 51 from coming into contact with each other, and it is possible to prevent the heating element 42 from being short-circuited or welded.

前記実施の形態によれば、次の効果が得られる。   According to the embodiment, the following effects can be obtained.

1) 発熱体の一対の給電部を外側碍子および内側碍子によって保持するとともに、内側碍子に両給電部および発熱体の円筒部の接触を阻止する隔壁部を設けることにより、発熱体が伸びた場合であっても、一対の給電部同士および発熱体の円筒部が接触するのを防止することができるので、発熱体の短絡や溶着を未然に防止することができる。 1) When the heating element is extended by holding the pair of feeding parts of the heating element with the outer and inner insulators, and by providing the inner insulator with a partition that prevents contact between both feeding parts and the cylindrical part of the heating element Even so, it is possible to prevent the pair of power feeding portions and the cylindrical portion of the heating element from coming into contact with each other, so that a short circuit and welding of the heating element can be prevented in advance.

2) 発熱体の短絡や溶着を未然に防止することにより、発熱体の寿命を延長することができる。 2) The life of the heating element can be extended by preventing the heating element from being short-circuited or welded.

3) 発熱体が伸びた時における発熱体の一対の給電部同士および円筒部の接触を防止することができるので、本発明を使用しない場合に比べ、一対の給電部を互いに接近させることができる。その結果、発熱体の無い給電部での温度低下を最小限度に抑制することができる。 3) Since the contact between the pair of power feeding portions of the heating element and the cylindrical portion when the heating element is extended can be prevented, the pair of power feeding portions can be brought closer to each other compared to the case where the present invention is not used. . As a result, it is possible to suppress the temperature decrease at the power feeding unit without the heating element to the minimum.

なお、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々に変更が可能であることはいうまでもない。   Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

例えば、隔壁部58を有する内側碍子55は、断熱壁体を構築する断熱ブロック36の本体37と一体的に成形してもよいし、一体型の断熱壁体33に一体的に成形してもよい。   For example, the inner insulator 55 having the partition wall portion 58 may be formed integrally with the main body 37 of the heat insulating block 36 that constructs the heat insulating wall body, or may be formed integrally with the integral heat insulating wall body 33. Good.

隔壁部58は内側碍子55に一体的に成形するに限らず、断熱壁体を構築する断熱ブロック36の本体37や一体型の断熱壁体33に設けてもよい。
内側碍子55の保持溝56、57は上側にそれぞれ形成するに限らず、内側碍子55の下側にそれぞれ形成するようにしてもよい。
同様に、外側碍子52の保持溝53、54においても上側にそれぞれ形成するに限らず、外側碍子52の下側にそれぞれ形成するようにしてもよい。
つまり、隔壁部を有する本発明に係る絶縁構造体は、断熱壁体と別体の絶縁部材である碍子によって構成してもよいし、断熱壁体自体によって構成してもよい。
The partition wall portion 58 is not limited to being formed integrally with the inner insulator 55, but may be provided on the main body 37 of the heat insulating block 36 or the integral heat insulating wall body 33 for constructing the heat insulating wall body.
The holding grooves 56 and 57 of the inner insulator 55 are not limited to being formed on the upper side, but may be formed on the lower side of the inner insulator 55.
Similarly, the holding grooves 53 and 54 of the outer lever 52 are not limited to be formed on the upper side, but may be formed on the lower side of the outer lever 52, respectively.
That is, the insulating structure according to the present invention having the partition wall may be constituted by an insulator that is a separate insulating member from the heat insulating wall, or may be constituted by the heat insulating wall itself.

本発明に係る発熱体の保持構造体は、CVD装置のヒータユニットに適用するに限らず、酸化膜形成装置や拡散装置およびアニール装置のヒータユニット等の加熱装置全般に適用することができる。
さらに、本発明に係る加熱装置は、CVD装置に適用するに限らず、酸化膜形成装置や拡散装置およびアニール装置等の基板処理装置全般に適用することができる。
The heating element holding structure according to the present invention can be applied not only to a heater unit of a CVD apparatus, but also to heating apparatuses such as an oxide film forming apparatus, a diffusion apparatus, and an annealing apparatus.
Furthermore, the heating apparatus according to the present invention is not limited to the CVD apparatus, but can be applied to all substrate processing apparatuses such as an oxide film forming apparatus, a diffusion apparatus, and an annealing apparatus.

本発明の一実施の形態であるCVD装置を示す正面断面図である。It is front sectional drawing which shows the CVD apparatus which is one embodiment of this invention. 本発明の一実施の形態であるヒータユニットの主要部を示す平面断面図である。It is a plane sectional view showing the principal part of the heater unit which is one embodiment of the present invention. 本発明の一実施の形態である発熱体の保持構造体の主要部を示しており、(a)は内側から見た展開図、(b)は(a)のb−b線に沿う平面断面図、(c)は(a)のc−c線に沿う側面断面図である。The main part of the holding | maintenance structure of the heat generating body which is one embodiment of this invention is shown, (a) is the expanded view seen from the inner side, (b) is the plane cross section in alignment with the bb line of (a). FIG. 4C is a side sectional view taken along line cc in FIG. (a)は本発明に係る絶縁構造体の一実施の形態である外側碍子を示す斜視図、(b)は同じく内側碍子を示す斜視図である。(A) is a perspective view which shows the outer side insulator which is one Embodiment of the insulation structure which concerns on this invention, (b) is a perspective view which similarly shows an inner side insulator. ヒータユニットの斜視図である。It is a perspective view of a heater unit. 接触防止の作用を示す各外概平面断面図であり、(a)は比較例の場合を、(b)は本実施の形態の場合をそれぞれ示している。It is each outer plane sectional drawing which shows the effect | action of contact prevention, (a) has shown the case of the comparative example, (b) has shown the case of this Embodiment, respectively.

符号の説明Explanation of symbols

1…ウエハ(基板)、11…プロセスチューブ、12…アウタチューブ、13…インナチューブ、14…処理室、15…炉口、16…マニホールド、17…排気管、18…排気路、19…ヒータベース、20…シールキャップ、21…ボートエレベータ、22…ボート、23…ガス導入管、24…温度センサ、25…回転機構、30…ヒータユニット(加熱装置)、31…ケース、32…隙間、33…断熱壁体(絶縁構造体)、34…天井壁部、35…側壁部、36…断熱ブロック、37…本体、37a…突出部、38…結合雄部(凸部)、39…結合雌部(凹部)、40…取付溝(凹部)、41…保持具、42…発熱体、42a…上側波部、42b…下側波部、43…隙間、43a…上側隙間、43b…下側隙間、44…両端部、45、46…給電部、47、48…接続部、49、50…挿通溝、51…円筒部、52…外側碍子(絶縁構造体)、53、54…保持溝、55…内側碍子(絶縁構造体)、56、57…保持溝、58…隔壁部、61…給電端子、62…渡り線、63…端子ケース、64…断熱材、65…絶縁碍子。   DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 11 ... Process tube, 12 ... Outer tube, 13 ... Inner tube, 14 ... Processing chamber, 15 ... Furnace, 16 ... Manifold, 17 ... Exhaust pipe, 18 ... Exhaust passage, 19 ... Heater base , 20 ... Seal cap, 21 ... Boat elevator, 22 ... Boat, 23 ... Gas introduction pipe, 24 ... Temperature sensor, 25 ... Rotation mechanism, 30 ... Heater unit (heating device), 31 ... Case, 32 ... Gap, 33 ... Insulating wall (insulating structure), 34 ... ceiling wall, 35 ... side wall, 36 ... heat insulating block, 37 ... main body, 37a ... projection, 38 ... coupling male part (convex part), 39 ... coupling female part ( (Recess), 40 ... mounting groove (recess), 41 ... holder, 42 ... heating element, 42a ... upper wave portion, 42b ... lower wave portion, 43 ... gap, 43a ... upper gap, 43b ... lower gap, 44 ... Both ends, 45, 4 ... Feeding part, 47, 48 ... Connection part, 49, 50 ... Insertion groove, 51 ... Cylindrical part, 52 ... Outer insulator (insulating structure), 53, 54 ... Holding groove, 55 ... Inner insulator (insulating structure), 56, 57 ... holding groove, 58 ... partition wall part, 61 ... feeding terminal, 62 ... crossover, 63 ... terminal case, 64 ... heat insulating material, 65 ... insulator.

Claims (17)

基板処理装置に用いられる発熱体の保持構造体であって、
円筒形状に形成された断熱壁体と、
該断熱壁体の内周側に沿って円筒状に設けられた円筒部と、該円筒部の端部に前記断熱壁体を貫通するように設けられた一対の給電部とを有する発熱体と、
少なくとも一部が前記一対の給電部間に設けられるとともに、他の一部が前記円筒部の内周面を超えて円筒部の内側にまで達するように設けられた碍子とを有する発熱体の保持構造体。
A heating element holding structure used in a substrate processing apparatus,
A heat insulating wall formed in a cylindrical shape;
A heating element having a cylindrical portion provided in a cylindrical shape along the inner peripheral side of the heat insulating wall, and a pair of power feeding portions provided so as to penetrate the heat insulating wall at the end of the cylindrical portion; ,
Holding of a heating element having at least a part provided between the pair of power feeding parts and another part extending beyond the inner peripheral surface of the cylindrical part to reach the inside of the cylindrical part Structure.
基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部間から前記円筒部の円周面上の位置を越えて前記円筒部の内側にまで達して前記一対の給電部間を隔離する隔壁部を有する絶縁構造体。
A heating element used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at ends of the cylindrical portion, and isolates the pair of power supply portions from each other. An insulating structure of
An insulating structure having a partition wall portion that separates the pair of power supply portions from between the pair of power supply portions to the inside of the cylindrical portion beyond a position on a circumferential surface of the cylindrical portion.
基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部間から前記円筒部の円周面上の位置にまで達して前記一対の給電部間を隔離する隔壁部を有する絶縁構造体。
A heating element used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at ends of the cylindrical portion, and isolates the pair of power supply portions from each other. An insulating structure of
An insulating structure having a partition wall that reaches between the pair of power feeding portions to a position on a circumferential surface of the cylindrical portion and isolates the pair of power feeding portions.
前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体の2つの絶縁部材を有する請求項2の絶縁構造体。   The pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on the outer peripheral side of the cylindrical portion, and has two insulating members separate from the heat insulating wall. 2. Insulating structure. 前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体の2つの絶縁部材を有する請求項3の絶縁構造体。   The pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on the outer peripheral side of the cylindrical portion, and has two insulating members separate from the heat insulating wall. 3. Insulation structure. 前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記断熱壁体とは別体で前記断熱壁体の外側に設けられた外側絶縁部材を有する請求項2または3の絶縁構造体。   A pair of power feeding portions of the heating element are provided so as to penetrate a heat insulating wall formed on the outer peripheral side of the cylindrical portion, and are provided separately from the heat insulating wall and outside the heat insulating wall. 4. The insulating structure according to claim 2, further comprising an outer insulating member. 前記発熱体の一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられており、前記隔壁部を有し、前記断熱壁体とは別体で前記断熱壁体の内側に設けられた内側絶縁部材を有する請求項2または3の絶縁構造体。   A pair of power feeding portions of the heating element is provided so as to penetrate a heat insulating wall formed on the outer peripheral side of the cylindrical portion, and has the partition wall, which is separate from the heat insulating wall. The insulating structure according to claim 2 or 3, further comprising an inner insulating member provided inside the heat insulating wall. 前記断熱壁体の内側に設けられた内側絶縁部材と、前記断熱壁体の外側に設けられた外側絶縁部材とを有する請求項4または5の絶縁構造体。   The insulating structure according to claim 4 or 5, comprising an inner insulating member provided inside the heat insulating wall and an outer insulating member provided outside the heat insulating wall. 前記絶縁部材が、前記断熱壁体よりも高い硬度を有する請求項4、5、6、7または8の絶縁構造体。   The insulating structure according to claim 4, 5, 6, 7 or 8, wherein the insulating member has a hardness higher than that of the heat insulating wall. 前記絶縁部材が、前記断熱壁体よりも高い曲げ強度を有する請求項4、5、6、7、8または9の絶縁構造体。   The insulating structure according to claim 4, 5, 6, 7, 8, or 9, wherein the insulating member has a bending strength higher than that of the heat insulating wall. 基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部間を隔離するための絶縁構造体であって、
前記一対の給電部が、前記円筒部の外周側に形成された断熱壁体を貫通するように設けられている給電部において、前記一対の給電部間を隔離するように、前記断熱壁体の外側に設けられた絶縁構造体。
A heating element used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at ends of the cylindrical portion, and isolates the pair of power supply portions from each other. An insulating structure of
In the power feeding part provided so that the pair of power feeding parts penetrates the heat insulating wall formed on the outer peripheral side of the cylindrical part, the pair of power feeding parts is separated from the pair of power feeding parts. Insulation structure provided outside.
前記断熱壁体よりも高い硬度または曲げ強度または密度を有する請求項11の絶縁構造体。   The insulating structure according to claim 11, having a higher hardness, bending strength, or density than the heat insulating wall. 基板処理装置に用いられる加熱装置の発熱体が、円筒形状の円筒部と該円筒部の端部に設けられた一対の給電部とを有しており、前記一対の給電部が前記円筒部の外周側に形成された断熱壁体を貫通するように設けられている給電部において、前記一対の給電部間を隔離するように前記断熱壁体の内側または外側に設けられた絶縁構造体であって、
前記断熱壁体よりも高い硬度または曲げ強度または密度を有する絶縁構造体。
A heating element of a heating device used in a substrate processing apparatus has a cylindrical cylindrical portion and a pair of power supply portions provided at the ends of the cylindrical portion, and the pair of power supply portions is a portion of the cylindrical portion. An insulating structure provided inside or outside the heat insulating wall so as to isolate the pair of power supplying portions in a power supplying portion provided so as to penetrate the heat insulating wall formed on the outer peripheral side. And
An insulating structure having a higher hardness, bending strength, or density than the heat insulating wall.
前記一対の給電部を保持するための一対の保持溝が設けられている請求項2〜13いずれかの絶縁構造体。   The insulating structure according to any one of claims 2 to 13, wherein a pair of holding grooves are provided to hold the pair of power feeding portions. 前記保持溝が前記絶縁構造体の最上部または最下部に至るまで切欠くように形成された請求項14の絶縁構造体。   The insulating structure according to claim 14, wherein the holding groove is formed to be cut out to reach the uppermost part or the lowermost part of the insulating structure. 請求項2〜15のいずれかの絶縁構造体を有する加熱装置。   The heating apparatus which has an insulating structure in any one of Claims 2-15. 請求項16の加熱装置を有する基板処理装置。   A substrate processing apparatus having the heating apparatus according to claim 16.
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CN2917150Y (en) 2007-06-27

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