1310215 九、發明說明： 【考务明戶斤屬身支4卿々貝㈣ 發明領域 本發明涉及隔熱壁體、發熱體的保持構造體、加熱裝 5置及基板處理裝置，例如在組裝有半導體積體電路裝置（以 下稱作ic)的半導體晶片（以下稱作晶片）上沈積(dep〇siti〇n) 了絕緣膜、金屬制膜以及半導體膜的Cvd裝置、氧化膜形 成裝置、擴散裝置、在用於進行離子注入後的載體活性化 和平坦化的回流(reflow)和退火等熱處理(thermal treatment) 10中使用的熱處理裝置(furnace)等半導體裝置中有效使用的 技術。 C -¾. 發明背景 在1C的製造方法中，在對晶片實施成膜處理和擴散處 15理時，廣泛使用著間歇式直立型的熱壁型擴散CVD裝置。 一般，間歇式直立型的熱壁型擴散CVD裝置（以下稱作 CVD裝置）具備··反應管，由形成送入晶片的處理室的内管 和包圍該内管的外管構成，設置成直立型；晶舟，保持作 爲被處理基板的多片晶片，並送入到内管的處理室中丨氣 體導入官，將原料氣體導入到内管内；排氣管，將反應管 内排氣；加熱器單元，設在反應管外，將反應管内加熱。 亚且’在通過晶舟將多片晶片沿垂直方向排列並保持 的狀態下，從下端的爐口送入（晶舟裝載）到内管内之後，將 原料氣體從氣體導入管導入到内管内，並且反應管内通過1310215 IX. Description of the Invention: [Technical Field] The present invention relates to a heat insulating wall body, a holding structure for a heat generating body, a heating device 5, and a substrate processing device, for example, assembled A semiconductor wafer (hereinafter referred to as a wafer) of a semiconductor integrated circuit device (hereinafter referred to as ic) is provided with a Cvd device, an oxide film forming device, and a diffusion device for depositing an insulating film, a metal film, and a semiconductor film. A technique that is effectively used in a semiconductor device such as a heat treatment device used for performing activation of a carrier after ion implantation, reflow of planarization, and thermal treatment 10 for annealing. C - 3⁄4. Background of the Invention In the manufacturing method of 1C, a batch type upright type hot wall type diffusion CVD apparatus is widely used when performing a film forming process and a diffusion process on a wafer. In general, a batch type upright type hot-wall type diffusion CVD apparatus (hereinafter referred to as a CVD apparatus) includes a reaction tube which is formed by an inner tube forming a processing chamber for feeding a wafer and an outer tube surrounding the inner tube, and is erected a wafer boat that holds a plurality of wafers as a substrate to be processed, and feeds the gas into the processing chamber of the inner tube to introduce the material gas into the inner tube; the exhaust tube exhausts the reaction tube; the heater The unit is disposed outside the reaction tube and heats the inside of the reaction tube. In the state in which the plurality of wafers are arranged and held in the vertical direction by the boat, the raw material gas is introduced into the inner tube from the gas introduction tube after being fed into the inner tube from the lower end of the furnace port. And pass through the reaction tube
2熱器單元被加熱。由此，將CVD膜沈積在晶片上，而且 實施擴散處理。 _在以往的這種CVD裝置中，作爲加熱裝置的加熱器單 ~具有如下結構，即具備：隔熱壁體，使用氧化鋁或二氧 夕等隔熱材料(heat insulating material)，通過真空形成（真 4¾附形成）法形成整體覆蓋反應管的長圓筒形狀；發熱 體使用鐵鉻鋁(Fe —Cr — A1)合金或二矽化鉬（MoSi2)而形 、f較長大，以及殼體，覆蓋隔熱壁體；並且，發熱體被 设在隔熱壁體的内周上。 在這樣的加熱器單元中，在實施例如30°c/分以上的急 速加熱的情況下，爲了加大發熱有效面積而使用形成爲板 狀的發熱體。 作爲將該板狀的發熱體設置在隔熱壁體的内周的以往 的發熱體的保持構造，有在設於隔熱壁體的内周上的多個 安裝槽中分別以離開槽底面的狀態設置發熱體的結構。例 如參照專利文獻1。 專利文獻1:日本特開2004 — 39967號公報 在上述的隔熱壁體中，由於發熱體被分別設置在安裝 槽内’所以能夠防止上下相鄰的發熱體彼此的接觸。 但是’爲了應付發熱體的熱膨脹及熱收縮的需要，發 熱體能夠在半徑方向上移動。 因而，在熱膨脹時，發熱體在安裝槽内向半徑方向外 側移動’在熱收縮時，發熱體在安裝槽内向半徑方向内側 移動而返回原位置。 1310215 但是’發熱體在熱膨脹時卡在安裝槽的側壁面上，該 被卡住的部位成爲固定端，通過這樣的作用，發熱體會變 形。同樣，發熱體在熱膨脹時卡在安裝槽的側壁面上，如 果在该卡住的狀態下發熱體降溫而收縮，則該被卡住的部 5位成爲固定端，通過這樣的作用，發熱體會變形。 在這種變形積累的情況下、或變形大的情況下，存在 會導致發熱體斷裂的問題。 【發明内容】 發明概要 1〇 树明的第一目的是’提供一種能夠防止發熱體的卡 掛、防止發熱體的變形於未然的隔熱壁體。 本發明的第二目的是，提供一種能夠防止發熱體的卡 掛、防止發熱體的變形於未然的發熱體的保持構造體。 本發明的第三目的是，提供一種能夠防止發熱體的卡 15掛、防止發熱體的變形於未然的加熱裝置。 本發明的第四目的是，提供一種能夠防止發熱體 掛、防止發熱體的變形於未然的基板處理裝置。 解決問題之方法 用 如下。 來解決上述課㈣機構中的具有代表性的技術方案 面上的安 具有用於將發熱體收納在該圓筒形狀的内 裝槽； ° 20 -1310215 形成上述安裝槽的一對側壁的間隔，隨著接近槽底而 變小。 (2) —種隔熱壁體，是用於基板處理裝置中的加熱裝 置的圓筒形狀的隔熱壁體，其形成如下結構： 5 具有用於將發熱體收納在該圓筒形狀的内周面上的安 裝槽； 形成上述安裝槽的一對側壁的間隔，從上述安裝槽的 底部朝著該側壁的頂部逐漸變大。 (3) —種隔熱壁體，是用於基板處理裝置中的加熱裝 10 置的圓筒形狀的隔熱壁體，其形成如下結構： 具有用於將發熱體收納在該圓筒形狀的内周面上的安 裝槽： 形成上述安裝槽的一對側壁的間隔，從上述安裝槽的 底部朝著上述圓筒形狀的半徑方向中心側逐漸變大。 15 (4) —種隔熱壁體，是用於基板處理裝置中的加熱裝 置的圓筒形狀的隔熱壁體，其形成如下結構： 具有用於將發熱體收納在該圓筒形狀的内周面上的安 裝槽： 形成上述安裝槽的一對側壁中的、比上述發熱體位於 20 垂直方向上側的側壁，朝著上述圓筒形狀的半徑方向中心 側逐漸向垂直方向上側變大； 形成上述安裝槽的一對側壁中的、比上述發熱體位於 垂直方向下側的側壁，朝著上述圓筒形狀的半徑方向中心 側逐漸向垂直方向下側變大。 8 1310215 (5) —種隔熱壁體，是用於基板處理裝置中的加熱裝 置的圓筒形狀的隔熱壁體，其形成如下結構： 具有用於將發熱體收納在該圓筒形狀的内周面上的安 裝槽： 5 上述安裝槽的垂直方向的寬度形成爲至少比上述發熱 體的垂直方向的上下端大，該寬度朝著上述圓筒形狀的半 徑方向中心側逐漸變大。 (6) —種隔熱壁體，是用於基板處理裝置中的加熱裝 置的圓筒形狀的隔熱壁體，其形成如下結構： 10 層疊有多個圓筒形狀的隔熱塊，該隔熱塊具有用於將 發熱體收納在内周面上的安裝槽； 在上述隔熱塊中的一個上形成有第一側壁，該第一側 壁成爲形成上述安裝槽的一對側壁中的一個； 在與形成有上述第一側壁的隔熱塊相鄰地層疊的隔熱 15 塊上，形成有與上述第一側壁對置、並成爲形成上述安裝 槽的一對側壁中的另一個的第二側壁； 上述第一側壁與上述第二側壁的間隔，從上述安裝槽 的底部朝著該安裝槽的頂部逐漸變大。 (7) —種隔熱壁體，是用於基板處理裝置中的加熱裝 20 置的圓筒形狀的隔熱壁體，其形成如下結構： 層疊有多個圓筒形狀的隔熱塊，該隔熱塊具有用於將 發熱體收納在内周面上的安裝槽； 在上述隔熱塊的下端部，以將上述隔熱塊的内周的一 部分切開成圓環形狀的狀態形成有結合凸部； 1310215 在上述隔熱塊的上端部，以將上述隔熱塊的外周的一 部分切開成圓環形狀的狀態形成有結合凹部； 在上述隔熱塊的内周面的上端和與該隔熱塊鄰接的隔 熱塊的内周面的上端之間，形成有上述安裝槽； 5 形成上述安裝槽的一對側壁的間隔，從上述安裝槽的 底部朝著該側壁的頂部逐漸變大。 (8) —種加熱裝置，具有上述(1)〜(7)中任一種隔熱壁 體。 (9) 一種基板處理裝置，具有上述(8)的加熱裝置。 ίο (ίο)—種發熱體的保持構造體，用於基板處理裝置， 其形成如下結構： 在形成爲圓筒形狀的隔熱壁體的内周面上形成有安裝 槽，在該安裝槽内設置著上述發熱體，形成上述安裝槽的 一對側壁的間隔隨著接近槽底而變小。 15 【實施方式】 較佳實施例之詳細說明 以下，參照附圖說明本發明的一實施方式。 在本實施方式中，本發明涉及的隔熱壁體在設置於作 爲本發明涉及的基板處理裝置的一實施方式的C V D裝置 20 (間歇式直立型的熱壁型擴散C VD裝置）中的本發明涉及的 加熱裝置的一實施方式的加熱器單元中使用。 作爲本發明的基板處理裝置的一實施方式的CVD裝置 如第1圖所示，具備垂直配設並被固定地支撐的直立型的反 應管11，反應管11包括外管12和内管13。 10 1310215 外管12使用石英(Si〇2)而一體成形爲圓筒形狀，内管13 使用石英(Si02)或碳化矽(SiC) —體成形爲圓筒形狀。 外管12形成爲其内徑比内管13的外徑大、上端封閉而 下端開口的圓筒形狀，呈同心圓地覆蓋内管13，包圍内管 5 13的外側。 内管13形成爲上下兩端開口的圓筒形狀，内管13的筒 中空部形成多片晶片被送入的處理室14，該多片晶片通過 晶舟22被保持成沿垂直方向排列的狀態◦内管13的下端開 口構成用於送入送出晶片的爐口 15。 10 外管12與内管13之間的下端部由形成爲圓環形狀的岐 管16氣密封閉，爲了進行内管13和外管12的更換等，岐管 16分別拆裝自如地被安裝在内管13及外管12上。 通過岐管16被支撐在CVD裝置的加熱器基座19上，反 應管11成爲垂直裝配的狀態。 15 在岐管16的側壁的上部連接著排氣管17 ,排氣管π構 成爲，與排氣裝置（未圖示）連接，能夠將處理室14真空排氣 成規疋的真空度。排氣管17成爲與形成在外管12和内管13 之間的間隙連通的狀態，由外管12和内管13的間隙構成排 氣通路18。排氣通路18的橫截面形狀成爲—定寬度的圓環 20 形狀。 由於排氣管I7與岐管I6連接，所以排氡管1?成爲被配 置在形成圓筒形狀的中空體、並沿垂直方向較長地形成的 排氣通路18的最下端的狀態。 在岐管16上，從垂直方向下側抵接著閉塞下端開口的 11 • 1310215 密封蓋20。密封蓋20形成爲具有與外管12的外徑大致相等 的直徑的圓盤形狀，可通過設置在反應管11外部的晶舟升 降機21(僅圖示了一部分)在垂直方向上升降。 在密封蓋20的中心線上垂直地豎立並支撐著用於保持 5作爲被處理基板的晶片1的晶舟22。晶舟22能夠使多片晶片 1以水平且相互中心對齊的狀態排列並保持。 在在封蓋20上連接著氣體導入管23，該氣體導入管23 與内官13的爐口 15連通，在氣體導入管23上連接著原料氣 體裝置和載體氣體供給裝置（都未圖示）。從氣體導入管23 10被導入到爐口 15的氣體，在内管13的處理室14内流通，通 過排氣通路18後從排氣管17排放。 在外官12的外部，加熱反應管n的内部的加熱裝置即 加熱器單元30 ’包圍著外管12的周圍並以同心圓設置著。 加熱器單元30具傷使用不錄鋼(SUS)並形成爲上端閉 15塞下端開口的圓筒形狀的殼體31，般體31的内徑及全長設 定爲比外管12的外徑及全長大。 在殼體31的内部設置有作爲本發明的-實施方式的發 熱體的保持構造體。本實施方式涉及的發熱體的保持構造 體具備發熱體和隔熱壁體33。 ' 2〇 #爲本發明的-實施方式的隔熱壁體33形成爲比外管 12的外fe大的圓筒形狀，被設置成與外管12成同心圓狀。2 The heater unit is heated. Thereby, a CVD film is deposited on the wafer, and diffusion treatment is performed. In the conventional CVD apparatus, the heater unit as the heating device has a structure in which a heat insulating wall body is formed by vacuum using a heat insulating material such as alumina or dioxin. The (true 43⁄4 attached) method forms a long cylindrical shape covering the reaction tube as a whole; the heating element is formed by using an iron-chromium-aluminum (Fe-Cr-Al) alloy or a molybdenum-doped molybdenum (MoSi2), the length is f, and the shell is covered. The heat insulating wall is provided; and the heat generating body is provided on the inner circumference of the heat insulating wall body. In such a heater unit, when rapid heating of, for example, 30 ° C / min or more is performed, a heat generating body formed into a plate shape is used in order to increase the effective heat generating area. The holding structure of the conventional heat generating body in which the plate-shaped heat generating body is provided on the inner circumference of the heat insulating wall body is separated from the bottom surface of the groove by a plurality of mounting grooves provided on the inner circumference of the heat insulating wall body. The state sets the structure of the heating element. For example, refer to Patent Document 1. In the above-mentioned heat insulating wall body, since the heat generating bodies are respectively provided in the mounting grooves, it is possible to prevent the heat generating bodies adjacent to each other from coming into contact with each other. However, in order to cope with the thermal expansion and heat shrinkage of the heat generating body, the heat generating body can move in the radial direction. Therefore, at the time of thermal expansion, the heat generating element moves outward in the radial direction in the mounting groove. When the heat is contracted, the heat generating element moves radially inward in the mounting groove and returns to the original position. 1310215 However, the heat generating body is caught on the side wall surface of the mounting groove during thermal expansion, and the stuck portion becomes a fixed end, and the heat generating body is deformed by such an action. Similarly, when the heat generating element is thermally expanded, it is caught on the side wall surface of the mounting groove, and if the heating element cools down and contracts in the stuck state, the stuck portion 5 becomes a fixed end, and the heat generating body is activated by such a function. Deformation. In the case where such deformation is accumulated or the deformation is large, there is a problem that the heating element is broken. SUMMARY OF THE INVENTION The first object of the present invention is to provide a heat insulating wall body capable of preventing the heat generating body from being caught and preventing the heat generating body from being deformed. A second object of the present invention is to provide a holding structure capable of preventing the heat generating body from being caught and preventing the heat generating body from being deformed. A third object of the present invention is to provide a heating device capable of preventing the card 15 from being attached to the heat generating body and preventing the deformation of the heat generating body. A fourth object of the present invention is to provide a substrate processing apparatus capable of preventing heat generation and preventing deformation of a heat generating body. The solution to the problem is as follows. To solve the problem on the representative technical solution surface of the above-mentioned class (4), there is an inner groove for accommodating the heat generating body in the cylindrical shape; ° 20 - 1310215 to form a space between the pair of side walls of the mounting groove, It becomes smaller as it approaches the bottom of the groove. (2) A heat insulating wall body is a cylindrical heat insulating wall body used for a heating device in a substrate processing apparatus, and has a structure in which: 5 is provided for housing a heat generating body in the cylindrical shape a mounting groove on the circumferential surface; a spacing of the pair of side walls forming the mounting groove gradually increases from the bottom of the mounting groove toward the top of the side wall. (3) A heat insulating wall body is a cylindrical heat insulating wall body for use in a heating device 10 in a substrate processing apparatus, and has a structure in which a heat generating body is housed in the cylindrical shape. Mounting groove on the inner peripheral surface: The interval between the pair of side walls forming the mounting groove gradually increases from the bottom of the mounting groove toward the center side in the radial direction of the cylindrical shape. (4) A heat insulating wall body is a cylindrical heat insulating wall body used for a heating device in a substrate processing apparatus, and has a structure for accommodating a heat generating body in the cylindrical shape a mounting groove on the circumferential surface: a side wall of the pair of side walls forming the mounting groove that is located on the upper side in the direction perpendicular to the heating element 20, and gradually increases toward the upper side in the vertical direction toward the center side in the radial direction of the cylindrical shape; Among the pair of side walls of the mounting groove, the side wall located lower than the heat generating body in the vertical direction gradually increases toward the lower side in the vertical direction toward the center side in the radial direction of the cylindrical shape. 8 1310215 (5) A heat insulating wall body is a cylindrical heat insulating wall body used for a heating device in a substrate processing apparatus, and has a structure for accommodating a heat generating body in the cylindrical shape. Mounting groove on the inner peripheral surface: 5 The width of the mounting groove in the vertical direction is formed to be at least larger than the upper and lower ends in the vertical direction of the heat generating body, and the width gradually increases toward the center side in the radial direction of the cylindrical shape. (6) A heat insulating wall body is a cylindrical heat insulating wall body used for a heating device in a substrate processing apparatus, and has the following structure: 10 A plurality of cylindrical heat insulating blocks are stacked, and the partition is formed The heat block has a mounting groove for receiving the heat generating body on the inner circumferential surface; a first side wall is formed on one of the heat insulating blocks, and the first side wall is one of a pair of side walls forming the mounting groove; a heat insulating 15 block laminated adjacent to the heat insulating block on which the first side wall is formed is formed with a second surface facing the first side wall and forming the other of the pair of side walls forming the mounting groove a sidewall; a spacing between the first sidewall and the second sidewall gradually increases from a bottom of the mounting slot toward a top of the mounting slot. (7) A heat insulating wall body is a cylindrical heat insulating wall body used for a heating device 20 in a substrate processing apparatus, and has a structure in which a plurality of cylindrical heat insulating blocks are stacked. The heat insulating block has a mounting groove for accommodating the heat generating body on the inner circumferential surface. The lower end portion of the heat insulating block is formed with a combined convex portion in a state in which a part of the inner circumference of the heat insulating block is cut into a ring shape. 1310215, a coupling recess is formed in a state in which a part of an outer circumference of the heat insulating block is cut into an annular shape at an upper end portion of the heat insulating block; and an upper end of the inner circumferential surface of the heat insulating block and the heat insulating portion The mounting groove is formed between the upper ends of the inner circumferential surfaces of the heat insulating blocks adjacent to the block; 5 The interval between the pair of side walls forming the mounting groove gradually increases from the bottom of the mounting groove toward the top of the side wall. (8) A heating device comprising the heat insulating wall according to any one of the above (1) to (7). (9) A substrate processing apparatus comprising the heating device of the above (8). Ίο (ίο), a holding structure for a heating element, for use in a substrate processing apparatus, having a structure in which an installation groove is formed in an inner circumferential surface of a heat insulating wall body formed in a cylindrical shape, and a mounting groove is formed in the mounting groove The heat generating body is provided, and the interval between the pair of side walls forming the mounting groove becomes smaller as it approaches the groove bottom. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, the heat insulating wall body according to the present invention is provided in the CVD apparatus 20 (the intermittent upright type hot wall type diffusing C VD apparatus) which is one embodiment of the substrate processing apparatus according to the present invention. The heater unit of one embodiment of the heating device according to the invention is used. As a CVD apparatus according to an embodiment of the substrate processing apparatus of the present invention, as shown in Fig. 1, an upright type reaction tube 11 that is vertically disposed and fixedly supported is provided, and the reaction tube 11 includes an outer tube 12 and an inner tube 13. 10 1310215 The outer tube 12 is integrally formed into a cylindrical shape using quartz (Si 2 ), and the inner tube 13 is formed into a cylindrical shape using quartz (SiO 2 ) or tantalum carbide (SiC). The outer tube 12 is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the inner tube 13, and the upper end is closed and the lower end is open, and the inner tube 13 is concentrically covered to surround the outer side of the inner tube 513. The inner tube 13 is formed in a cylindrical shape in which both upper and lower ends are open, and the hollow portion of the inner tube 13 forms a processing chamber 14 into which a plurality of wafers are fed, and the plurality of wafers are held in a vertical direction by the boat 22. The lower end opening of the inner tube 13 constitutes a furnace opening 15 for feeding and feeding the wafer. The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a fistula 16 formed in a ring shape, and the manifold 16 is detachably mounted for replacement of the inner tube 13 and the outer tube 12, and the like. On the inner tube 13 and the outer tube 12. The manifold 16 is supported by the heater base 19 of the CVD apparatus, and the reaction tube 11 is vertically assembled. 15 An exhaust pipe 17 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe π is connected to an exhaust device (not shown) to evacuate the processing chamber 14 to a predetermined degree of vacuum. The exhaust pipe 17 is in a state of communicating with the gap formed between the outer pipe 12 and the inner pipe 13, and the exhaust passage 18 is constituted by the gap between the outer pipe 12 and the inner pipe 13. The cross-sectional shape of the exhaust passage 18 is a ring 20 shape having a constant width. Since the exhaust pipe I7 is connected to the manifold I6, the exhaust pipe 1 is in a state of being disposed at the lowermost end of the exhaust passage 18 which is formed in a hollow hollow body and formed in the vertical direction. On the manifold 16, the lower side of the vertical direction abuts the 11 • 1310215 sealing cover 20 that closes the lower opening. The seal cap 20 is formed in a disc shape having a diameter substantially equal to the outer diameter of the outer tube 12, and can be raised and lowered in the vertical direction by a crystal boat elevator 21 (only a part of which is shown) provided outside the reaction tube 11. A wafer boat 22 for holding the wafer 1 as a substrate to be processed is vertically erected and supported on the center line of the sealing cover 20. The wafer boat 22 is capable of arranging and holding a plurality of wafers 1 in a state of being horizontally and center-aligned with each other. A gas introduction pipe 23 is connected to the cover 20, and the gas introduction pipe 23 communicates with the furnace opening 15 of the inner door 13, and a gas supply device and a carrier gas supply device are connected to the gas introduction pipe 23 (none of which is shown). . The gas introduced into the furnace port 15 from the gas introduction pipe 23 10 flows through the processing chamber 14 of the inner pipe 13, passes through the exhaust passage 18, and is discharged from the exhaust pipe 17. On the outside of the outside officer 12, a heating means for heating the inside of the reaction tube n, that is, the heater unit 30' surrounds the periphery of the outer tube 12 and is disposed concentrically. The heater unit 30 is formed of a cylindrical casing 31 having a lower end opening and a lower end opening, and the inner diameter and the total length of the general body 31 are set to be larger than the outer diameter and the overall length of the outer tube 12. Big. A holding structure as a heat generating body of the embodiment of the present invention is provided inside the casing 31. The holding structure of the heat generating body according to the present embodiment includes a heat generating body and a heat insulating wall body 33. The heat insulating wall body 33 of the present invention is formed into a cylindrical shape larger than the outer portion of the outer tube 12, and is provided concentrically with the outer tube 12.
隔熱壁體33與殼體31的内周面之間的間隙32是用來氣冷的 空間。 V ^熱壁體33具備：圓盤形狀的頂壁部34，具有比殼體 12 .1310215 31的内技小的外控’以及圓筒形狀的側壁部％，具有比外 管12的外徑大的内徑和比殼體31的内徑小的外徑。 頂壁部34覆蓋側壁部35上端的開口而將其封閉，頂壁 部34的上端面被設置成與殼體35的頂壁的下表面接觸。 5 另外，也可以構成爲，設置貫通頂壁部34及殼體31的 頂壁的排氣口，使隔熱壁體33與外管12之間的環境氣體強 制風冷。 通過將側壁部35的外徑設定得比殼體31的内徑小，在 側壁部35與殼體31之間形成作爲風冷空間的間隙32。 10 另外，也可以構成爲，在隔熱壁體33的側壁部35設置 貫通孔，以使間隙32、隔熱壁體33和外管12之間的空間貫 通，並且，使隔熱壁體33與外管12之間的環境氣體強制風 冷。 並且，隔熱壁體33的側壁部35通過在垂直方向上層疊 15 多個隔熱塊36而構築爲一個筒體。 如第1及2圖所示，隔熱塊36具備較短的圓筒形狀的環 形的主體37 ’主體37採用纖維狀或球狀的氧化铭或二氧化 矽等還具有絕緣材功能的隔熱材料，通過真空形成法一體 成形。 20 另外，隔熱塊36及主體37也可以在沿圓筒形狀的圓周 方向分割成多個、例如以規定的角度將圓筒形狀分割成多 個的狀態下成形，然後組裝成圓筒形狀。 如果這樣’因爲在隔熱塊36甲也形成遊隙（易動度），所 以即使向隔熱塊36施加了應力也難以分開。優選的是，如 13 ^ 1310215 果進行四分割，則在尺寸方面也較好。 成在主體37的下端部’以將主體37内周的一部分切開成 圓環形狀的狀態形成有結合凸部38。在主體37的上端部， 以將主體37外周的-部分切開成圓環形狀的狀態形成有結 5 合凹部39。 此外，在主體37上端的内周側形成有向内側方向突出 的突出部37a(參照第3(c)圖）。 在相鄰的上下的隔熱塊36的突出部％之間，以一定的 深度 定的高度形成有用於安裝發熱體的安裝槽（凹 ⑴部^，以使其成爲將側壁部35的内周面切開成圓環形狀的 狀態。對於各個隔熱塊36各形成有—個安裝槽4〇，成爲一 個封閉的圓形。 在安裝槽40的内周面’如第3⑻圖所示，沿周向大致等 間隔地安裝有多個用於將發熱體定位保持的u字釘形狀的 15 保持用具41。 安裝槽40形成爲，其上下方向的寬度隨著接近圓筒形 狀的侧壁部35的外徑方向（與圓筒的中心相反的方向）即槽 底40a而逐漸變窄。即，在安裝槽40的上下一對側壁上形成 有錐面40b、40c，兩個錐面40b、40c間的距離越接近槽底 20 40c越小。 此外，換一種說法，安裝槽40的垂直方向的一對側壁 的間隔，從側壁的頂部（突出部37a的内周面上）開始越接近 安裝槽40的底部（槽底40a的内周面上）就變得越小。 另外，如第3(c)圖所示，錐面4〇b形成在安裝槽4〇的垂 14 1310215 直方向的一對側壁中的上側側壁上，比收納在安裝槽40中 的發熱體42位於垂直方向上側，朝著安裝槽4〇的圓筒形狀 半徑方向中心側逐漸向垂直方向上側變大。 此外，錐面40c形成在安裝槽4〇的垂直方向的一對側壁 5中的下側側壁上，比收納在安裝槽40中的發熱體42位於垂 直方向下側，朝著安裝槽40的圓筒形狀半徑方向中 心側逐 漸向垂直方向下側變大。 在發熱體42中採用Fe-Cr —A1合金或MoSi2及SiC等電 阻發熱材料。發熱體42如第3(a)圖所示，爲波浪形的平板形 10狀。此外，上側波部42a和上側間隙43a、及下側波部42b和 下側間隙43b分別交替地形成。它們通過衝壓加工或鐳射切 割加工等一體成形。 發熱體42沿著隔熱塊36的内周設置成圓環形狀。發熱 體42所形成的圓環形狀的外徑比隔熱塊36的安裝槽4〇的内 15徑（内周面的直徑）小一些。發熱體42沿著隔熱塊36的内周設 置成圓環形狀。發熱體42所形成的圓環形狀的外徑比隔熱 塊36的安裝槽40的内徑（内周面的直徑）小一些。 此外’發熱體42所形成的圓環形狀的内徑比隔熱塊36 的突出部3 7 a的内徑稍大一些。 20 如上所述，形成了呈圓環形狀的發熱體42的圓筒部51。 如第1〜3圖所示，發熱體42的圓筒部51被設置在隔熱 塊36的每個安裝槽40中。在其上下段隔離地設置著相鄰的 其他發熱體42的圓筒部51。 如第3(a)、3(b)圖所示，多個保持用具41、41被分別配 15 .1310215 置在從上側間隙43a的下端到下側間隙43b的上端的位置’ 並插入隔熱塊36中。這樣，以從安裝槽40的内周面離開的 狀態保持發熱體42。 如第2及3圖所示，在發熱體42的圓筒部51的雨端部 5 44、44，一對供電部45、46分別與圓環形狀的圓周方向昱 直角、且向半徑方向外側彎曲地形成。在一對供電部45、 46的前端部，一對連接部47、48分別與供電部45、46呈直 角地彎曲而形成，且相互爲相反方向。 爲了抑制一對供電部45、46的發熱量的降低，一對供 10 電部45、46的間隔設定得較小。 優選的是，將一對供電部45、46從圓環形狀的圓周方 向朝半徑方向外側的分別彎曲成直角的部位，設爲發熱體 42的上側波部42a的最上部附近或下側波部42b的最下部附 近。 15 通過這樣，能夠進一步沒有間隙地將發熱體鋪設在一 對供電部45、46上。 在與一對供電部45、46的位置對應的圓筒形狀的隔熱 塊36上，分別形成有一對插通槽49、50。兩個插通槽49、 50從安裝槽40側沿圓筒形狀的半徑方向達到主體37的外周 20側而形成。兩個供電部45、46分別插通在兩個插通槽49、 50中。 另外’兩個插通槽49 ' 50也可以是，在插通兩個供電 部45、46之前，包含兩個插通槽49、50之間在内，兩個插 通槽49、50形成爲一個插通槽，在插通兩個供電部45、46 16 1310215 後，通過在兩個供電部45、46間埋設纖維狀或球狀的氧化 銘或二氧化石夕等還具有絕緣材功能的隔熱材料，來形成隔 熱壁體33及插通槽49、50。 在主體37的外周面的兩個插通槽49、5〇部分，設有絕 5緣子（以下，稱作外側絕緣子)52。 外側絕緣子5 2使用氧化鋁或二氧化矽等具有耐熱性的 作爲絕緣材料的陶瓷，通過燒結法等適當制法，能夠使硬 度、彎曲強度及密度比隔熱塊36高。 如第4(a)圖所示，外側絕緣子52爲大致正方形，一體成 10形爲具有一點曲面R1的平盤形狀，並被固定在主體37的外 周面上，該曲面R1與隔熱塊36的外周面的曲面對應，。 外側絕緣子52具有至少與隔熱塊36同等以上的硬度、 同等以上的彎曲強度及同等以上的密度。 另外，優選的是，如果外側絕緣子52的硬度比隔熱塊 15 36的硬度高，則能夠有效地抑制發熱體42的翹曲。 此外，優選的是，如果外側絕緣子52的彎曲強度及/或 密度比隔熱塊36的彎曲強度及/或密度高，則能夠有效地抑 制發熱體42的翹曲。 在外側絕緣子52的上部，分別形成有用於插通一對供 20電部的作爲插通部的一對保持槽53、54。兩個保持槽53、 54的位置對應於兩個插通槽49、5〇的位置，大體爲相同位 置。在兩個保持槽53、54中分別插通並保持著插通在兩個 插通槽49、50中的兩個供電部45、46。 優選的是，如第4(a)圖所示，保持槽53、54可以切開到 17 1310215 外側絕緣子52的最上部而形成。這是因爲，在設置了一對 供電部後，能夠安裝、更換外側絕緣子52。但是，保持槽 53、54也可以不切開到外側絕緣子52的最上部，而是形成 孔狀。 5 通過外側絕緣子52的兩個保持槽53、54保持發熱體42 的供電部45、46，能夠抑制發熱體42的翹曲。兩個保持槽 53、54的間隔對應於主體37的兩個插通槽49、5〇的間隔， ^ 爲相同的間隔。 這裏，所謂的發熱體42的翹曲，是指通過對發熱體42 1〇供電而使發熱體42發生熱膨脹、或通過停止供電而發生熱 收縮，從原來配置的位置偏移、或移動、或扭轉而運動的 現象。 在安裝槽40的内周面的對應於兩個插通槽49、5〇的部 位，抵接固定有絕緣子（以下，稱作内側絕緣子)55。 15 内側絕緣子55使用氧化鋁或二氧化矽等的具有耐熱性 • 的作爲絕緣材料的陶瓷，通過燒結法等適當制法，能夠使 硬度、彎曲強度及密度比隔熱塊36高。例如，使内側絕緣 子55的氧化鋁成分的含有率比隔熱塊36高，能夠提高硬 度、彎曲強度及密度。 2〇 如第4(b)圖所示，内側絕緣子55爲大致正方形，一體成 形爲具有一點曲面R2的平盤形狀，並被固定在主體37的外 周面上，該曲面R2與隔熱塊36的内周面的曲面相對應。 内側絕緣子55至少具備與隔熱塊36同等以上的硬度。 另外’優選的是’如果使内側絕緣子55的硬度比隔熱 18 1310215 塊36的硬度高’則能夠有效地抑制發熱體42的翹曲。 此外’優選的是’如果使内側絕緣子55的彎曲強度及/ 或密度比隔熱塊36的彎曲強度及/或密度高，則能夠有效地 抑制發熱體42的翹曲。 5 在内側絕緣子55的上部，分別形成有用於插通一對供 電部的作爲插通部的—對保持槽56、57。兩個保持槽56、 57的位置對應於兩個插通槽49、5〇的位置，大體爲相同位 置。在兩個保持槽56、57中分別插通並保持著插通在兩個 插通槽49、50中的兩個供電部45、46。 10 優選的是，如第4(b)圖所示，保持槽56、57可以切開到 内側絕緣子55的最上部而形成。這是因爲，在設置了一對 供電部後’能夠安裝、更換内側絕緣子55。但是，保持槽 56、57也可以不切開到内側絕緣子55的最上部，而是形成 孔狀。 15 通過内側絕緣子55的兩個保持槽56、57保持發熱體42 的供電部45、46 ’能夠抑制發熱體42的翹曲。兩個保持槽 56、57的間隔對應主體37的兩個插通槽49、50的間隔，爲 相同的間隔。 在内側絕緣子55的内側端面（與隔熱塊36的相反側的 20端面、即發熱體42的圓筒部51側的端面）上，在兩個保持槽 56、57之間，設有隔開發熱體42的一對供電部45、46及圓 筒部51的隔壁部58。隔壁部58的厚度⑴是，在其抵接於安 裝槽40的内周面上固定時，使其至少可設置到發熱體42的 圓筒部51的内周面上的位置。 19 -1310215 優選的是’如第2圖所示，隔壁部58的厚度⑴可以是， 在其抵接於安裝槽40的内周面上固定時’應越過發熱體42 的圓筒部51的内周面上而設置到圓筒部51的内側。通過這 樣’能夠有效地隔開發熱體42的一對供電部45、46及圓筒 5 部 51。 此外，隔壁部58的高度(h)是如下的尺寸（h)，即在其抵 接於安裝槽4〇的内周面上固定時，至少與發熱體42的板寬 度同等以上的值。此外，隔壁部58被設置在與兩個保持槽 56、57相同高度的位置，以使其能夠將一對供電部45、46 10設置在相同高度的位置，從而隔開發熱體42的一對供電部 45、46 ° 優選的是，隔壁部58的高度(h)如第3(a)圖所示，可以 設爲在抵接於安裝槽40的内周面上設置固定時，比發熱體 42的圓间部51的上側波部42a的最上部的高度和下側波部 15 42b的最下部的高度之間的值(hi)大。通過這樣，能夠有效 地隔開一對供電部45、46及圓筒部51。 隔壁部58從内側絕緣子55的内側端面向兩側形成並設 有彎曲部R3。通過設置該彎曲部r3，能夠容易形成内側絕 緣子55，並且增加内側絕緣子55的強度，即使發熱體42的 20圓筒部51膨脹、伸長’與隔壁部58接觸，内側絕緣子55也 不易破裂。 另外’彎曲部R3不僅可以做成曲面形狀，也可以做成 由平坦面構成的錐狀。 如第2及3圖所示，在上段側的發熱體42的一個連接部 -1310215 (以下稱作正側連接部)47上焊接著供電端子6ι，在另一個連 接部（以下稱作負側連接部)48上焊接著搭接線62的上端 部。搭接線62的下端部與下段側的發熱體42的正側連接部 47連接。 5 因而，下段側的發熱體42的正側連接部47位於上段側 的發熱體42的負側連接部48的正下方附近，成爲下段側的 發熱體42的圓向部51的兩端部44、44比上段侧的發熱體42 的圓筒部51的兩端部44、44向周向偏移這部分距離的狀態。 搭接線62爲了將來自搭接線62表面的散熱抑制爲較 10小’採用Fe_Cr—A1合金或河0&2及SiC等電阻發熱材料， 剖面形成爲圓形的圓棒形狀。但是，根據搭接線的電流容 量的情況’搭接線62也可以將剖面形成爲四邊形的角棒形 狀。 如第2及5圖所示’在加熱器單元30的殼體31的外周面 15 上與供電端子51的設置場所對應的位置，覆蓋著包覆兩個 連接部47、48及搭接線62的端子殼體63，在端子殼體63的 内部填充有玻璃纖維等隔熱材料64。在端子殼體63中經由 絕緣子65插入有多個供電端子61。 接著，簡單地說明利用有關上述結構的CVD裝置來製 2〇 造1C等半導體裝置的製造方法的成膜工序。 如第1圖所示，如果將多片薄片1裝填在晶舟22上（晶片 裝料），則保持了多片晶片1的晶舟22被晶舟升降機21提起 而送入到處理室11中（晶舟裝載）。 在該狀態下，密封蓋20成爲將岐管16的下端開口密封 21 1310215 的狀態。 反應管11的内部通過排氣管17被真空排氣，成爲規定 的壓力（真空度）。 此外’反應管11的内部被加熱器單元30加熱，成爲規 5定的溫度。此時’根據溫度感測器24所檢測到的溫度資訊， 反饋控制向加熱器單元3〇的發熱體42的通電狀況，以使處 理室14内成爲規定的溫度分佈。 接著，晶舟22通過旋轉機構25被旋轉，由此晶片1旋轉。 接著，通過氣體導入管23將控制爲規定流量的原料氣 10 體向處理室14内導入。 被導入的原料氣體在處理室14内上升，從内管13的上 端開口流出到排氣通路18，然後從排氣管π被排放。 原料氣體在通過處理室14内時與晶片1的表面接觸，此 時，通過熱CVD反應將薄膜沈積在晶片1的表面上。 15 如果經過了預先設定的處理時間，則從惰性氣體供給 源（未圖示）供給惰性氣體，處理室14内被置換爲惰性氣體， 並且使處理室14内的麼力恢復到常壓。 然後’通過晶舟升降機21使密封蓋20下降，將岐管μ 的下端開口，並且在將處理後的晶片i保持在晶舟22上的狀 20態下，從岐管16的下端送出到反應管11的外部（晶舟卸載）。 然後’將處理後的晶片1從晶舟22中取出（晶片抑料）。 但是，加熱器單元30的發熱體42如果溫度上升，則因 熱膨脹而伸長，所以整體上圓環形狀的發熱體42的圓筒部 51的直徑變大。如果發熱體42的直徑變大，則發熱體42被 22 .1310215 保持用具41僅限制了向隔熱壁體33的中心方向的移動，所 以發熱體42在安裝槽40内成爲向半徑方向外側移動的狀 離。 例如，如第6(a)圖所示，在上下的側壁相互平行地形成 5的安裝槽40,的情況下，在安裝槽40’内向半徑方向外側移動 時，有可能發熱體42十在安裝槽40’的側壁面上，被卡住的 部位成爲固定端，通過這樣的作用發熱體會變形。 此外，同樣地，如果發熱體在熱膨脹時卡在安裝槽40, 的側壁面上，在該十彳主的狀態下發熱體42降溫而收縮’則 10卡住的部分成爲固定端，通過這樣的作用發熱體會變形。 在這種變形積累的情况下'或變形大的情況下’有可能導 致發熱體42斷裂。此外，因熱膨脹而使上側波部42a向上 側、下側波部42b向下側分別伸長’所以安裝槽40的兩側壁 與發熱體42的距離變窄，所以上述的問題更爲顯著。但是， 15在本實施方式中，由於在安裝槽4〇的兩側壁上形成有錐面 4〇b、4〇c’所以如第6(b)圖所示’當在安裝槽4〇内向半徑方 向外側移動時，能夠防止發熱體42卡在安裝槽4〇的側壁面 上。此外’即使發熱體42在熱膨脹時向一個側壁側偏移， 發熱體42也會在錐面上滑動，能夠收容在規定的上下位置 20 上0 因此，即使發熱體42降溫而收縮，發熱體42也會在安 裝槽40内向半徑方向内側移動而返回到原位置。即:能夠 將伴隨著發熱體42的熱膨脹及熱收縮的變形、劣化、斷妒 防jh於未然。 23 !3ΐ〇2ι5 另外，優選的是，安裝槽40的槽底40a的垂直方向（上 下方向）的寬度，可以設爲至少比發熱體42的圓筒部51的上 側波部42a的最上部的高度和下側波部421)的最下部的高户 之間的值(M)大的寬度。通過這樣，不會一直到安裝槽^ 5的槽底40a ’發熱體42被卡在側壁面上，而能夠熱膨賬。 根據上述實施方式’能夠得到下面的效果。 (1)通過使安裝了發熱體的安裝槽的側壁傾斜，以使側 壁間的距離越接近槽底越小，在隨著熱膨脹而發熱體在安 裝槽内向半徑方向外側移動時，能夠防止發熱體卡在安裳 K)槽的側壁面上。其結果，即使發熱體降溫而收縮，發熱體 也能夠在安裝槽内朝著半徑方向内側移動而返回到原位 置。 ’、 ⑵通過防止伴隨發熱體的熱膨脹及熱收縮的發_ 的變形及應力負荷，能夠將隨著發熱體的熱膨脹及熱收縮 15而發生的發熱體的劣化及斷裂防止於未然，所以能夠_ 發熱體的壽命。 x (3)通過使伴隨發熱體的熱膨脹及熱收縮的發熱體的 上下方向（垂直方向）的移動在期望的範圍内，將反應管内的 B曰舟上Λ3上下方向（垂直方向）鋪設的晶片加熱時的上下方 20向的晶片間的溫度向發熱體的上下方向的移動，㈣防止 對晶片的溫度分佈劣化、或産生了再調整爲適當的溫度分 佈的而要所以月匕夠提两加熱器單元及[Μ裝置的性能。 另外本1月並不限於上述實施方式，當‘然可以在不 脫離其主旨的範圍内進行各種改變。 24 1310215 例如’隔熱壁體並不限於將多個隔熱塊在垂直方向上 層豐而構築成一個筒體的結構，也可以一體地形成。 外側絕緣子及内側絕緣子並不限於使用上述實施方式 的部件，也可以省略。 5 本發明涉及的隔熱壁體並不限於適用於CVD裝置的加 熱器單元中的發熱體的保持構造體’也能夠普遍適用於氧 化膜形成裝置、擴散裝置及退火襄置的加熱器單元等的加 熱裝置的所有隔熱壁體。 再者，本發明涉及的基板處理裝置並不限於適用於 10 CVD裝置’也能夠普遍適用於氧化膜形成裝置、擴散裝置 及退火裝置等所有基板處理裝置。 C圖式簡明】 第1圖是表示作爲本發明的一實施方式的CVD裝置的 正面剖視圖。 15 帛是表不作爲本發明的—實施方式的加熱器單元 的主要部分的平面剖視圖。 第3圖表示作爲本發明的一實施方式的發熱體的保持 構k體主要部分’第3⑷圖是從内側觀察的展開圖，第3⑻ 圖是沿第3⑷圖的b — b線的剖視圖，第3(c)圖是沿第3⑻圖 20 的c —c線的剖視圖。 第4⑻圖是表科側絕緣子的謂圖，第_圖是表示 相同機構中的内側絕緣子的立體圖。 第5圖是加熱器單元的立體圖。 第6圖是表示防止變形的作用的各外部概略平面剖視 25 -1310215 圖，第6(a)圖表示比較例的情況，第6(b)圖表示本實施方式 的情況。 【主要元件符號說明】The gap 32 between the heat insulating wall 33 and the inner peripheral surface of the casing 31 is a space for air cooling. The V ^ hot wall body 33 is provided with a disk-shaped top wall portion 34 having a smaller internal control than the housing 12 . 1310215 31 and a cylindrical side wall portion % having an outer diameter than the outer tube 12 The large inner diameter and the outer diameter smaller than the inner diameter of the housing 31. The top wall portion 34 covers the opening at the upper end of the side wall portion 35 to close it, and the upper end surface of the top wall portion 34 is provided in contact with the lower surface of the top wall of the casing 35. Further, an exhaust port penetrating the top wall portion 34 and the top wall of the casing 31 may be provided, and the ambient gas between the heat insulating wall body 33 and the outer pipe 12 may be forced to be air-cooled. By setting the outer diameter of the side wall portion 35 to be smaller than the inner diameter of the casing 31, a gap 32 as an air-cooling space is formed between the side wall portion 35 and the casing 31. Further, a through hole may be formed in the side wall portion 35 of the heat insulating wall body 33 so that the gap 32, the space between the heat insulating wall body 33 and the outer tube 12 penetrate, and the heat insulating wall body 33 may be provided. The ambient gas between the outer tube 12 is forced to be air cooled. Further, the side wall portion 35 of the heat insulating wall body 33 is constructed as a single cylinder by laminating a plurality of heat insulating blocks 36 in the vertical direction. As shown in Figs. 1 and 2, the heat insulating block 36 is provided with a short cylindrical main body 37. The main body 37 is made of a fibrous or spherical oxide or cerium oxide and has an insulating material function. The material is integrally formed by a vacuum forming method. In addition, the heat insulating block 36 and the main body 37 may be formed by dividing into a plurality of cylindrical shapes in a circumferential direction, for example, in a state in which the cylindrical shape is divided into a plurality of shapes at a predetermined angle, and then assembled into a cylindrical shape. If this is the case, since the gap (movability) is also formed in the heat insulating block 36, it is difficult to separate even if stress is applied to the heat insulating block 36. Preferably, if the four divisions are performed as 13 ^ 1310215, the size is also good. The lower end portion of the main body 37 is formed with a coupling convex portion 38 in a state in which a part of the inner circumference of the main body 37 is cut into an annular shape. At the upper end portion of the main body 37, a knot recess 39 is formed in a state in which a portion of the outer circumference of the main body 37 is cut into an annular shape. Further, a projecting portion 37a that protrudes inward is formed on the inner peripheral side of the upper end of the main body 37 (see Fig. 3(c)). A mounting groove (a recess (1) portion) for mounting a heat generating body is formed at a constant height between the protruding portions % of the adjacent upper and lower heat insulating blocks 36 so as to be the inner circumference of the side wall portion 35 The surface is cut into a circular shape. Each of the heat insulating blocks 36 is formed with a mounting groove 4 〇 to form a closed circular shape. The inner circumferential surface of the mounting groove 40 is as shown in the third (8), along the circumference. A plurality of holding members 41 having a U-shaped pin shape for holding and holding the heat generating body are mounted at substantially equal intervals. The mounting groove 40 is formed such that its width in the up and down direction is close to the cylindrical side wall portion 35. The outer diameter direction (the direction opposite to the center of the cylinder), that is, the groove bottom 40a, is gradually narrowed. That is, the pair of upper and lower side walls of the mounting groove 40 are formed with tapered surfaces 40b, 40c, and between the two tapered surfaces 40b, 40c. The closer the distance is, the smaller the groove bottom 20 40c is. Further, in other words, the interval between the pair of side walls in the vertical direction of the mounting groove 40 is closer to the mounting groove 40 from the top of the side wall (the inner peripheral surface of the protruding portion 37a). The bottom portion (the inner peripheral surface of the groove bottom 40a) becomes smaller. Further, as shown in Fig. 3(c), the tapered surface 4〇b is formed on the upper side wall of the pair of side walls in the straight direction of the hanging groove 14 1310215 of the mounting groove 4, than the heat generating body 42 housed in the mounting groove 40. The upper side in the vertical direction gradually increases toward the upper side in the vertical direction toward the center side in the radial direction of the cylindrical shape of the mounting groove 4〇. Further, the tapered surface 40c is formed on the lower side of the pair of side walls 5 in the vertical direction of the mounting groove 4〇. The side wall is located on the lower side in the vertical direction than the heat generating body 42 housed in the mounting groove 40, and gradually increases toward the lower side in the vertical direction toward the center side in the cylindrical radial direction of the mounting groove 40. Fe- is used in the heating element 42. a Cr-Al alloy or a resistance heating material such as MoSi2 or SiC. The heating element 42 has a wavy flat plate shape as shown in Fig. 3(a). Further, the upper wave portion 42a, the upper gap 43a, and the lower side wave The portion 42b and the lower gap 43b are alternately formed. They are integrally formed by press working, laser cutting, etc. The heat generating body 42 is formed in a circular ring shape along the inner circumference of the heat insulating block 36. The ring formed by the heat generating body 42 The outer diameter of the shape is smaller than the mounting groove of the heat insulating block 36. The inner diameter 15 (the diameter of the inner circumferential surface) is smaller. The heating element 42 is formed in a circular ring shape along the inner circumference of the heat insulating block 36. The outer diameter of the annular shape formed by the heating element 42 is larger than that of the heat insulating block 36. The inner diameter (the diameter of the inner peripheral surface) of the mounting groove 40 is smaller. Further, the inner diameter of the annular shape formed by the heat generating body 42 is slightly larger than the inner diameter of the protruding portion 37a of the heat insulating block 36. 20 The cylindrical portion 51 of the heat generating body 42 having an annular shape is formed. As shown in the first to third figures, the cylindrical portion 51 of the heat generating body 42 is disposed in each of the mounting grooves 40 of the heat insulating block 36. The cylindrical portion 51 of the adjacent other heat generating body 42 is provided in isolation in the upper and lower sections. As shown in Figs. 3(a) and 3(b), the plurality of holding tools 41, 41 are respectively disposed at a position of 15.1310215 from the lower end of the upper side gap 43a to the upper end of the lower side gap 43b' and inserted into the heat insulation. In block 36. Thus, the heat generating body 42 is held in a state of being separated from the inner peripheral surface of the mounting groove 40. As shown in the second and third figures, in the rain end portions 548 and 44 of the cylindrical portion 51 of the heating element 42, the pair of power supply portions 45 and 46 are perpendicular to the circumferential direction of the annular shape and radially outward. Formed in a curved shape. At the front end portions of the pair of power supply portions 45, 46, the pair of connection portions 47, 48 are formed to be bent at right angles to the power supply portions 45, 46, respectively, and are opposite to each other. In order to suppress a decrease in the amount of heat generation of the pair of power supply portions 45, 46, the interval between the pair of power supply portions 45, 46 is set to be small. Preferably, the pair of power supply portions 45 and 46 are bent at right angles from the circumferential direction of the annular shape toward the outer side in the radial direction, and the uppermost wave portion 42a of the heat generating body 42 is formed at the uppermost portion or the lower wave portion of the upper wave portion 42a. Near the lowermost part of 42b. Thus, the heat generating body can be laid on the pair of power supply portions 45, 46 without any gap. A pair of insertion grooves 49, 50 are formed in each of the cylindrical heat insulating blocks 36 corresponding to the positions of the pair of power supply portions 45, 46. The two insertion grooves 49, 50 are formed from the side of the mounting groove 40 in the radial direction of the cylindrical shape to the outer peripheral side 20 of the main body 37. The two power supply portions 45, 46 are respectively inserted into the two insertion grooves 49, 50. In addition, the two insertion grooves 49 ′ 50 may be formed such that the two insertion grooves 49 and 50 are formed between the two insertion grooves 49 and 50 before the two power supply portions 45 and 46 are inserted. An insertion groove, after inserting the two power supply portions 45, 46 16 1310215, by embedding a fibrous or spherical oxidized or oxidized stone between the two power supply portions 45, 46, etc. The heat insulating material is used to form the heat insulating wall body 33 and the insertion grooves 49 and 50. In the two insertion grooves 49 and 5'' on the outer peripheral surface of the main body 37, a rim 5 (hereinafter referred to as an outer insulator) 52 is provided. The outer insulator 5 2 is made of a heat-resistant ceramic such as alumina or ceria, and can be made to have a higher hardness, bending strength, and density than the heat insulating block 36 by a suitable method such as a sintering method. As shown in Fig. 4(a), the outer insulator 52 is substantially square, integrally formed into a flat disk shape having a slight curved surface R1, and is fixed to the outer peripheral surface of the main body 37. The curved surface R1 and the heat insulating block 36 are provided. The surface of the outer peripheral surface corresponds to. The outer insulator 52 has a hardness equal to or higher than the heat insulating block 36, a bending strength equal to or higher than the same, and a density equal to or higher than the same. Further, it is preferable that if the hardness of the outer insulator 52 is higher than the hardness of the heat insulating block 15 36, the warpage of the heat generating body 42 can be effectively suppressed. Further, it is preferable that if the bending strength and/or density of the outer insulator 52 is higher than the bending strength and/or density of the heat insulating block 36, the warpage of the heating element 42 can be effectively suppressed. In the upper portion of the outer insulator 52, a pair of holding grooves 53, 54 as insertion portions for inserting a pair of electric portions 20 are formed. The positions of the two holding grooves 53, 54 correspond to the positions of the two insertion grooves 49, 5, which are substantially the same position. Two power supply portions 45, 46 that are inserted into the two insertion grooves 49, 50 are inserted and held in the two holding grooves 53, 54 respectively. Preferably, as shown in Fig. 4(a), the retaining grooves 53, 54 may be formed by cutting to the uppermost portion of the outer insulator 52 of 17 1310215. This is because the outer insulator 52 can be attached and replaced after the pair of power supply portions are provided. However, the holding grooves 53 and 54 may not be cut to the uppermost portion of the outer insulator 52, but may be formed in a hole shape. 5 The feeding portions 45 and 46 of the heating element 42 are held by the two holding grooves 53 and 54 of the outer insulator 52, and the warpage of the heating element 42 can be suppressed. The interval between the two holding grooves 53, 54 corresponds to the interval of the two insertion grooves 49, 5'' of the main body 37, and ^ is the same interval. Here, the warpage of the heating element 42 means that the heating element 42 is thermally expanded by supplying power to the heating element 42 1〇, or is thermally contracted by stopping the power supply, and is displaced or moved from the originally disposed position, or The phenomenon of twisting and moving. An insulator (hereinafter referred to as an inner insulator) 55 is abutted and fixed to a portion of the inner circumferential surface of the mounting groove 40 corresponding to the two insertion grooves 49 and 5A. In the inner insulator 55, ceramics which are heat-insulating materials such as alumina or cerium oxide are used, and the hardness, bending strength and density can be made higher than that of the heat insulating block 36 by a suitable method such as a sintering method. For example, the content of the alumina component of the inner insulator 55 is made higher than that of the heat insulating block 36, and the hardness, bending strength, and density can be improved. 2, as shown in FIG. 4(b), the inner insulator 55 is substantially square, integrally formed into a flat disk shape having a slight curved surface R2, and is fixed to the outer peripheral surface of the main body 37, the curved surface R2 and the heat insulating block 36. The curved surface of the inner peripheral surface corresponds. The inner insulator 55 has at least the same hardness as the heat insulating block 36. Further, it is preferable that the warpage of the heat generating body 42 can be effectively suppressed if the hardness of the inner insulator 55 is made higher than the hardness of the heat insulating block 18 1310215. Further, it is preferable that the bending strength and/or the density of the inner insulator 55 is higher than the bending strength and/or density of the heat insulating block 36, whereby the warpage of the heating element 42 can be effectively suppressed. 5 In the upper portion of the inner insulator 55, holding grooves 56 and 57 as insertion portions for inserting a pair of power supply portions are formed, respectively. The positions of the two holding grooves 56, 57 correspond to the positions of the two insertion grooves 49, 5, which are substantially the same position. Two power supply portions 45, 46 that are inserted into the two insertion grooves 49, 50 are inserted and held in the two holding grooves 56, 57, respectively. Preferably, as shown in Fig. 4(b), the holding grooves 56, 57 are formed by cutting to the uppermost portion of the inner insulator 55. This is because the inner insulator 55 can be attached and replaced after the pair of power supply portions are provided. However, the holding grooves 56, 57 may not be cut to the uppermost portion of the inner insulator 55, but may be formed in a hole shape. The power supply portions 45, 46' of the heat generating body 42 are held by the two holding grooves 56, 57 of the inner insulator 55 to suppress the warpage of the heat generating body 42. The interval between the two holding grooves 56, 57 corresponds to the interval between the two insertion grooves 49, 50 of the main body 37, and is the same interval. The inner end surface of the inner insulator 55 (the end surface on the opposite side of the heat insulating block 36, that is, the end surface on the cylindrical portion 51 side of the heat generating body 42) is provided with a space between the two holding grooves 56 and 57. The pair of power supply portions 45 and 46 of the heating element 42 and the partition wall portion 58 of the cylindrical portion 51. The thickness (1) of the partition portion 58 is at least a position at the inner circumferential surface of the cylindrical portion 51 of the heat generating body 42 when it is fixed to the inner peripheral surface of the mounting groove 40. 19 - 1310215 Preferably, as shown in Fig. 2, the thickness (1) of the partition wall portion 58 may be such that it should pass over the cylindrical portion 51 of the heat generating body 42 when it abuts against the inner peripheral surface of the mounting groove 40. The inner peripheral surface is provided to the inner side of the cylindrical portion 51. By this, the pair of power supply portions 45, 46 and the cylindrical portion 51 of the heat generating body 42 can be effectively separated. Further, the height (h) of the partition wall portion 58 is a size (h) which is equal to or higher than the plate width of the heat generating body 42 when it is fixed to the inner peripheral surface of the mounting groove 4A. Further, the partition wall portion 58 is provided at the same height as the two holding grooves 56, 57 so that the pair of power supply portions 45, 46 10 can be disposed at the same height position, thereby separating the pair of the heat generating bodies 42. The power supply portions 45 and 46 ° preferably have a height (h) of the partition wall portion 58 as shown in Fig. 3(a), and may be a heating element when the inner circumferential surface of the mounting groove 40 is fixed. The value (hi) between the height of the uppermost portion of the upper side wave portion 42a of the inter-round portion 51 of 42 and the height of the lowermost portion of the lower side wave portion 15 42b is large. Thus, the pair of power supply portions 45, 46 and the cylindrical portion 51 can be effectively separated. The partition portion 58 is formed from the inner end surface of the inner insulator 55 on both sides and is provided with a bent portion R3. By providing the curved portion r3, the inner insulating member 55 can be easily formed, and the strength of the inner insulator 55 can be increased, and even if the cylindrical portion 51 of the heating element 42 expands and the elongation ′ comes into contact with the partition wall portion 58, the inner insulator 55 is less likely to be broken. Further, the curved portion R3 may be formed not only in a curved shape but also in a tapered shape formed of a flat surface. As shown in the second and third figures, the power supply terminal 6 is welded to one connection portion - 1310215 (hereinafter referred to as a positive side connection portion) 47 of the heating element 42 on the upper side, and the other connection portion (hereinafter referred to as the negative side) The upper end portion of the strap 62 is welded to the connecting portion 48. The lower end portion of the tap wire 62 is connected to the positive side connecting portion 47 of the heat generating body 42 on the lower stage side. Therefore, the positive side connecting portion 47 of the heating element 42 on the lower stage side is located immediately below the negative side connecting portion 48 of the heating element 42 on the upper stage side, and becomes the both end portions 44 of the circular portion 51 of the heating element 42 on the lower stage side. 44 is a state in which the both end portions 44 and 44 of the cylindrical portion 51 of the heating element 42 on the upper stage side are shifted in the circumferential direction by the distance. In order to suppress the heat radiation from the surface of the bonding wire 62 to be smaller than 10, the wiring 62 is formed into a circular round bar shape by using a resistive heat generating material such as Fe_Cr-Al alloy or river 0 and SiC. However, depending on the current capacity of the wiring, the wiring 62 can also be formed into a quadrangular corner bar shape. As shown in FIGS. 2 and 5, 'the outer peripheral surface 15 of the casing 31 of the heater unit 30 corresponds to the installation place of the power supply terminal 51, and covers the two connecting portions 47, 48 and the bonding wires 62. The terminal housing 63 is filled with a heat insulating material 64 such as glass fiber inside the terminal housing 63. A plurality of power supply terminals 61 are inserted into the terminal housing 63 via the insulator 65. Next, a film forming process for manufacturing a semiconductor device such as 1C using a CVD apparatus having the above configuration will be briefly described. As shown in Fig. 1, if a plurality of sheets 1 are loaded on the wafer boat 22 (wafer loading), the wafer boat 22 holding the plurality of wafers 1 is lifted by the boat elevator 21 and fed into the processing chamber 11. (Crystal loading). In this state, the seal cap 20 is in a state in which the lower end opening of the manifold 16 is sealed 21 1310215. The inside of the reaction tube 11 is evacuated by the exhaust pipe 17 to have a predetermined pressure (degree of vacuum). Further, the inside of the reaction tube 11 is heated by the heater unit 30 to have a predetermined temperature. At this time, based on the temperature information detected by the temperature sensor 24, the energization state of the heating element 42 to the heater unit 3 is feedback-controlled so that the inside of the processing chamber 14 becomes a predetermined temperature distribution. Next, the wafer boat 22 is rotated by the rotating mechanism 25, whereby the wafer 1 is rotated. Next, the raw material gas 10 controlled to a predetermined flow rate is introduced into the processing chamber 14 through the gas introduction pipe 23. The introduced material gas rises in the processing chamber 14, flows out from the upper end opening of the inner tube 13 to the exhaust passage 18, and is discharged from the exhaust pipe π. The material gas comes into contact with the surface of the wafer 1 while passing through the processing chamber 14, at which time a thin film is deposited on the surface of the wafer 1 by a thermal CVD reaction. When the predetermined processing time elapses, the inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 14 is replaced with an inert gas, and the force in the processing chamber 14 is returned to the normal pressure. Then, the sealing cover 20 is lowered by the boat elevator 21 to open the lower end of the manifold μ, and is sent from the lower end of the manifold 16 to the reaction in the state of the state in which the processed wafer i is held on the wafer boat 22. The outside of the tube 11 (boat unloading). Then, the processed wafer 1 is taken out from the wafer boat 22 (wafer suppression). However, when the temperature of the heating element 42 of the heater unit 30 rises due to thermal expansion, the diameter of the cylindrical portion 51 of the annular heat generating element 42 as a whole becomes large. When the diameter of the heating element 42 is increased, the heating element 42 is restricted to the center of the heat insulating wall 33 by the holding member 41. Therefore, the heating element 42 is moved radially outward in the mounting groove 40. The shape of the separation. For example, as shown in Fig. 6(a), when the mounting grooves 40 of the upper and lower side walls are formed in parallel with each other, when the mounting grooves 40' are moved outward in the radial direction, there is a possibility that the heating element 42 is mounted. The portion on the side wall surface of the groove 40' that is caught is a fixed end, and the heat generating body is deformed by such action. Further, in the same manner, if the heating element is caught on the side wall surface of the mounting groove 40 during thermal expansion, the heating element 42 is cooled and contracted in the state of the tenth main, and the portion that is stuck is the fixed end. The function of the heating element will be deformed. In the case where such deformation is accumulated, or in the case where the deformation is large, there is a possibility that the heating element 42 is broken. Further, since the upper side wave portion 42a is extended upward and the lower side wave portion 42b is extended downward by the thermal expansion, the distance between the side walls of the mounting groove 40 and the heating element 42 is narrowed, so that the above problem is more remarkable. However, in the present embodiment, since the tapered surfaces 4〇b and 4〇c' are formed on both side walls of the mounting groove 4〇, as shown in Fig. 6(b), when the radius is inward in the mounting groove 4〇 When moving outward in the direction, it is possible to prevent the heat generating body 42 from being caught on the side wall surface of the mounting groove 4〇. Further, even if the heating element 42 is displaced toward one side wall during thermal expansion, the heating element 42 slides on the tapered surface and can be accommodated in the predetermined vertical position 20. Therefore, even if the heating element 42 cools down and contracts, the heating element 42 It also moves in the radial direction inside the mounting groove 40 and returns to the original position. In other words, deformation, deterioration, and breakage accompanying thermal expansion and thermal contraction of the heating element 42 can be prevented. Further, it is preferable that the width of the groove bottom 40a of the attachment groove 40 in the vertical direction (vertical direction) is at least the uppermost portion of the upper wave portion 42a of the cylindrical portion 51 of the heat generating body 42. The height (M) is a large width between the height and the lowermost high portion of the lower side wave portion 421). By doing so, the heat generating body 42 of the groove bottom 40a' of the mounting groove 5 is not caught until it is caught on the side wall surface, and can be thermally expanded. According to the above embodiment, the following effects can be obtained. (1) The side wall of the mounting groove to which the heating element is attached is inclined so that the distance between the side walls becomes smaller as the distance from the side of the groove becomes smaller, and when the heating element moves radially outward in the mounting groove with thermal expansion, heat generation can be prevented. The body is stuck on the side wall of the slot of the Anshang K). As a result, even if the heating element is cooled and contracted, the heating element can be moved inward in the radial direction in the mounting groove and returned to the home position. (2) By preventing deformation and stress load caused by thermal expansion and thermal contraction of the heating element, it is possible to prevent deterioration and breakage of the heating element due to thermal expansion and thermal contraction 15 of the heating element, so that it is possible to The life of the heating element. x (3) A wafer in which the upper and lower directions (vertical direction) of the heat generating body accompanying the thermal expansion and the heat shrinkage of the heat generating body are placed in a desired range, and the B in the reaction tube is laid up in the vertical direction (vertical direction) The temperature between the upper and lower wafers in the upper 20 directions during heating is moved in the vertical direction of the heating element, (4) the temperature distribution of the wafer is prevented from being deteriorated, or the temperature distribution is adjusted to an appropriate temperature, so that two heatings are required. Unit and [performance of the device. Further, the present month is not limited to the above-described embodiments, and various changes may be made without departing from the spirit and scope of the invention. 24 1310215 For example, the 'insulation wall body' is not limited to a structure in which a plurality of heat insulating blocks are stacked in a vertical direction to form a single tubular body, and may be integrally formed. The outer insulator and the inner insulator are not limited to the members of the above embodiment, and may be omitted. The heat insulating wall body according to the present invention is not limited to the heat retaining body of the heater unit of the CVD apparatus, and can be generally applied to an oxide film forming apparatus, a diffusing apparatus, and an annealing unit heater unit. All insulation walls of the heating device. Further, the substrate processing apparatus according to the present invention is not limited to being applied to 10 CVD apparatuses, and can be generally applied to all substrate processing apparatuses such as an oxide film forming apparatus, a diffusing apparatus, and an annealing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front cross-sectional view showing a CVD apparatus according to an embodiment of the present invention. 15 is a plan cross-sectional view showing a main portion of the heater unit which is not an embodiment of the present invention. Fig. 3 is a view showing a main portion of a holding structure of a heat generating body according to an embodiment of the present invention. Fig. 3(4) is a developed view as seen from the inside, and Fig. 3(8) is a cross-sectional view taken along line b-b of Fig. 3(4). 3(c) is a cross-sectional view taken along line c-c of Fig. 20 of Fig. 3(8). Fig. 4(8) is a front view of the watch side insulator, and Fig. _ is a perspective view showing the inner insulator in the same mechanism. Figure 5 is a perspective view of the heater unit. Fig. 6 is a cross-sectional view of each external schematic plane showing the action of preventing deformation. Fig. 6(a) shows a comparative example, and Fig. 6(b) shows a case of the present embodiment. [Main component symbol description]
1.. .薄片 11.. .反應管 12…外管 13.. .内管 14.. .處理室 15".爐口 16.. .岐管 17.. .排氣管 18.. .排氣通路 19.. .加熱器基座 20.. .密封蓋 21.. .晶舟升降機 22.. .晶舟 23.. .氣體導入管 24.. .溫度感測器 25.. .旋轉機構 30.. .加熱器單元 31.. .殼體 32.. .間隙 33.. .隔熱壁體 34.. .頂壁部 35.. .側壁部 36.. .隔熱塊 37…主體 37a...突出部 38.. .結合凸部 39.. .結合凹部 40.. .安裝槽 40’...安裝槽 40a...槽底 40b、40c...錐面 41…保持用具 42.. .發熱體 42a...上側波部 42b...下側波部 43a.··上側間隙 43b...下側間隙 44.. .兩端部 45、46...供電部 47、48...連接部 49、50...插通槽 51.. .圓筒部 26 .1310215 52...外側絕緣子 62...搭接線 53、54...保持槽 63...端子殼體 55...内側絕緣子 64...隔熱材料 56、57...保持槽 65...絕緣子 58...隔壁部 R1...點曲面 58...隔壁部 R1...曲面 61...供電端子 R3...彎曲部 271.. Sheet 11... Reaction tube 12... Outer tube 13.. Inner tube 14.. Processing chamber 15". Furnace port 16... Tube 17:. Exhaust tube 18.. Gas passage 19: Heater base 20.. Sealing cover 21.. Crystal boat elevator 22.. Crystal boat 23.. Gas introduction tube 24.. Temperature sensor 25.. Rotating mechanism 30.. . Heater unit 31.. . Housing 32.. Clearance 33.. Insulation wall body 34.. Top wall portion 35.. Side wall portion 36.. Insulation block 37... Main body 37a ... protruding portion 38.. combined with convex portion 39.. combined with concave portion 40.. mounting groove 40'... mounting groove 40a... groove bottom 40b, 40c... tapered surface 41... holding tool 42 The heating element 42a...the upper side wave portion 42b...the lower side wave portion 43a.·the upper side gap 43b...the lower side gap 44..the both end portions 45,46...the power supply unit 47, 48...connection portion 49, 50... insertion groove 51.. cylindrical portion 26 .1310215 52... outer insulator 62... lap wires 53, 54... holding groove 63... Terminal housing 55...Insulator 64...Insulation material 56,57...holding groove 65...insulator 58...partition wall portion R1...point curved surface 58...partition wall portion R1.. Curved surface 61...power supply terminal R3...bending portion 27