TW200717612A - Heating insulating wall, supporting structure for a heating element, heating device and substrate processing apparatus - Google Patents

Heating insulating wall, supporting structure for a heating element, heating device and substrate processing apparatus

Info

Publication number
TW200717612A
TW200717612A TW095111184A TW95111184A TW200717612A TW 200717612 A TW200717612 A TW 200717612A TW 095111184 A TW095111184 A TW 095111184A TW 95111184 A TW95111184 A TW 95111184A TW 200717612 A TW200717612 A TW 200717612A
Authority
TW
Taiwan
Prior art keywords
heating element
heating
insulating wall
prevent
processing apparatus
Prior art date
Application number
TW095111184A
Other languages
Chinese (zh)
Other versions
TWI310215B (en
Inventor
Shinobu Sugiura
Hideto Tateno
Hitoshi Murata
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200717612A publication Critical patent/TW200717612A/en
Application granted granted Critical
Publication of TWI310215B publication Critical patent/TWI310215B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

To previously prevent a heating element from being deformed by eliminating an obstacle thereto. An attachment groove 40 in which a heating element 42 is placed has side surfaces. The side surfaces have taper surfaces 40b, 40c. The taper surfaces 40b, 40c are inclined in such a manner as to become more distant from the heating element 42 as it goes closer to a central portion of a heat insulating wall 33. When the heating element 42 is radially moved in the attachment groove 40 due to thermal expansion, it is possible to prevent the heating element 42 from being hindered by the taper surface 40b, 40c of the attachment groove 40. Further, when the heating element 42 is contracted by a decrease in temperature, it can be inwardly moved to return to an original position. By prevent the heating element from being deformed by thermal expansion and thermal shrinkage, it is possible to previously prevent the heating element from developing a short-circuit, thereby lengthening a life thereof.
TW095111184A 2005-09-26 2006-03-30 Heating insulating wall, supporting structure for a heating element, heating device and substrate processing apparatus TWI310215B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005277210A JP4907937B2 (en) 2005-09-26 2005-09-26 Thermal insulation wall, heating element holding structure, heating device and substrate processing apparatus

Publications (2)

Publication Number Publication Date
TW200717612A true TW200717612A (en) 2007-05-01
TWI310215B TWI310215B (en) 2009-05-21

Family

ID=37959303

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111184A TWI310215B (en) 2005-09-26 2006-03-30 Heating insulating wall, supporting structure for a heating element, heating device and substrate processing apparatus

Country Status (4)

Country Link
JP (1) JP4907937B2 (en)
KR (2) KR100727014B1 (en)
CN (2) CN100511589C (en)
TW (1) TWI310215B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI748167B (en) * 2018-03-13 2021-12-01 日商東京威力科創股份有限公司 Thermal insulation structure and vertical heat treatment device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4331768B2 (en) * 2007-02-28 2009-09-16 東京エレクトロン株式会社 Heat treatment furnace and vertical heat treatment equipment
JP4445519B2 (en) 2007-06-01 2010-04-07 東京エレクトロン株式会社 Heat treatment furnace and manufacturing method thereof
JP5006122B2 (en) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ Substrate processing equipment
JP5128918B2 (en) 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ Substrate processing equipment
JP5031611B2 (en) 2008-02-18 2012-09-19 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and ceiling insulator
JP5347319B2 (en) * 2008-04-30 2013-11-20 信越半導体株式会社 Vertical heat treatment equipment
KR101096602B1 (en) * 2009-07-21 2011-12-20 가부시키가이샤 히다치 고쿠사이 덴키 Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
US9064912B2 (en) 2009-07-21 2015-06-23 Hitachi Kokusai Electric, Inc. Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
JP5544121B2 (en) * 2009-07-21 2014-07-09 株式会社日立国際電気 Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method
JP5645718B2 (en) 2011-03-07 2014-12-24 東京エレクトロン株式会社 Heat treatment equipment
KR101394325B1 (en) * 2012-08-07 2014-05-13 주식회사 테라세미콘 Heater and method for manufacturing the same
JP5993272B2 (en) 2012-10-18 2016-09-14 東京エレクトロン株式会社 Manufacturing method of heat insulation wall
JP5824082B2 (en) * 2014-02-05 2015-11-25 株式会社日立国際電気 Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method
CN103928373B (en) * 2014-04-28 2016-10-12 北京七星华创电子股份有限公司 A kind of semiconductor heat treatment equipment
TWI611043B (en) * 2015-08-04 2018-01-11 Hitachi Int Electric Inc Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium
JP7122856B2 (en) * 2018-05-02 2022-08-22 東京エレクトロン株式会社 Heat treatment equipment
CN115938995B (en) * 2023-02-24 2023-05-30 深圳市新凯来技术有限公司 Wafer heating device and semiconductor processing equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2759673B2 (en) * 1989-03-15 1998-05-28 科学技術庁無機材質研究所長 Multi-stage reflective electric furnace
JP3241887B2 (en) * 1993-08-11 2001-12-25 東京エレクトロン株式会社 Heat treatment equipment
US5506389A (en) 1993-11-10 1996-04-09 Tokyo Electron Kabushiki Kaisha Thermal processing furnace and fabrication method thereof
JP3471100B2 (en) 1994-11-07 2003-11-25 東京エレクトロン株式会社 Vertical heat treatment equipment
JP3881937B2 (en) * 2002-07-05 2007-02-14 株式会社日立国際電気 Semiconductor manufacturing equipment or heating equipment
JP2004119800A (en) * 2002-09-27 2004-04-15 Hitachi Kokusai Electric Inc Substrate processing device and method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI748167B (en) * 2018-03-13 2021-12-01 日商東京威力科創股份有限公司 Thermal insulation structure and vertical heat treatment device

Also Published As

Publication number Publication date
CN1941287A (en) 2007-04-04
CN2914322Y (en) 2007-06-20
KR100762059B1 (en) 2007-10-01
JP4907937B2 (en) 2012-04-04
KR100727014B1 (en) 2007-06-13
CN100511589C (en) 2009-07-08
JP2007088325A (en) 2007-04-05
KR20070034979A (en) 2007-03-29
TWI310215B (en) 2009-05-21
KR20070034912A (en) 2007-03-29

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