TW579600B - Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer - Google Patents

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer Download PDF

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TW579600B
TW579600B TW091108710A TW91108710A TW579600B TW 579600 B TW579600 B TW 579600B TW 091108710 A TW091108710 A TW 091108710A TW 91108710 A TW91108710 A TW 91108710A TW 579600 B TW579600 B TW 579600B
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electron mobility
high electron
mobility transistor
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Wladyslaw Walukiewicz
Prashant Chavarkar
Yifeng Wu
Ioulia P Smorchkova
Stacia Keller
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Cree Inc
Univ California
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Junction Field-Effect Transistors (AREA)

Description

579600 A7 B7 五、發明説明（ 本申請書說明Smorchkova等人所提出臨時申請序號 60/290，195的優點，提出時間是在5月j i日，2〇〇1年。 發明背景 發明蓺圚 本發明是有關高頻固態電晶體，且特別是以第三族氮化 物為主的高電子移動率電晶體（HEMTs)。 相關技藝据述 南電子移動率電晶體是一種常見型的固態電晶體經常是 由像矽（Si)或砷化鎵（GaAs)的半導體材料製成的。矽的一 個缺點是它具有低的電子移動率（大約是145〇 cm2/v-s)，而 產生一南源極電阻。此電阻會降低以矽為主的高電子移動 率電晶體的高效率增益。[CRC出版，電氣工程手冊（The Elegtrical Engineering ，第二版，Dorf,994 頁， ( 1 997)]。 以石申化鎵為主的高電子移動率電晶體成為民用及軍用雷 達中訊號放大，手持式行動電話，以及衛星通信的標準。 砷化鎵比矽具有一較高的電子移動率（大約是6〇〇〇 cm2/v-s) 和一較低電源極電阻，使得以砷化鎵為主的元件可以操作 在更高的頻率。然而，砷化鎵具有一相對小的能隙（室溫下 為1.42電子伏特）和相對小的崩潰電壓，因此阻礙了以砷化 鎵為主的高電子移動率電晶體在高頻時提供高功率。 鋁氮化鎵/砷化鎵半導體材料製造的改良集中關注於鋁氮 化鎵/氮化鎵高電子移動率電晶體用在高頻，高溫及高功率 應用的發展上。鋁氮化鎵/氮化鎵有著大能隙，高峰值和飽 和電子速度值[B· Belmont，K. Kim和M. Shur，J. Appl. Phys· 74
裝 訂 線
579600 A7 B7 五、發明説明（2 ) 1818 (1993)]。鋁氮化鎵/氮化鎵高電子移動率電晶體也可以 有二維電子氣表面密度超過1〇13 /平方公分以及比較高的電 子移動率（高到 2019 cm2/Vs)[R. Gaska，J.W· Yang, A. Osinsky， Q. Chen，Μ·Α. Khan，Α·0· Orlov，G丄.Snider 和 M.S. Shur，Appl· Phys· Lett·，72, 707 (1998)]。這些特性使得鋁氮化鎵/氮化鎵 高電子移動率電晶體可以在較高的頻率下提供高功率。 ί呂氮化鎵/氮化鎵高電子移動率電晶體已被長再生藍寶石 基底上並顯示一 4.6瓦/毫米的功率密度以及一 7. 6瓦的全部 功率[Y.F. Wu等，IEICE Trans. Electron·，E-82-C，1895 (1999)] 。更近地’鋁氮化鎵/氮化鎵高電子移動率電晶體在碳化矽 上已顯示一 9.8瓦/毫米的功率密度在8 GHz時[丫1冒11，0· Kapolenek，J.p. ibbetson，P. Parikh，Β·Ρ· Keller 和 U.K. Mishra， IEEE Trans· Electron，Dev·，48, 586 (2001)]以及一 22·9 的全部 輸出功率在9 GHz時[M. Micovic，A Kurdoghlian，Ρ· Janke，P. Hashimoto，D.W.S. Wong，J.S. Moon，L. McCray 和 C. Nguyen， IEEE Trans Electron. Dev·，48, 591 (2001)]。
Khan等人的美國專利序號5, 1 92,98 7揭示以氮化鎵/鋁氮 化鎵為主的高電子移動率電晶體長在一緩衝層和一基底 上。其他鋁氮化鎵/氮化鎵高電子移動率電晶體和場效電晶 體（FETs)已被Gaska等人所提出，”鋁氮化鎵/氮化鎵HEMTs 在破化石夕基底上的高溫效率’，，IEEE Electron Device Letters. Vol· 18, No· i〇, i〇 月，1997。492 頁；和Ping等人的，”高 電流鋁氮化鎵異質結構場效電晶體長在P型碳化矽基底上的 直流和微波效率”，IEEE Electron Device Letters, Vol. 19，No. 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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線 579600 A7 B7 五、發明説明（3 ) 2，1998年2月，54頁。這些元件有些已顯示一增益-頻寬乘 積（fT)達 67 GHz 那樣高[K· Chu 等人 WOCSEMMAD，Monterey， CA (1998年2月）]以及高功率密度達到2.84瓦/毫米在1〇 GHz[G. Sullivan等人，”在絕緣碳化矽中鋁氮化鎵HFET，s的 高功率 10 GHz 操作 ’’，IEEE Electron Device Letters Vol. 19, No· 6，198 頁（ 1 998 年 6 月）；和 Wu 等人的 IEEE Electron Device Letters. Vol. 19，No. 2, 50頁（1998年2 月）]。 圖1，顯示一典型的链氮化鎵/氮化鎵高電子移動率電晶 體1〇包含一氮化鎵緩衝層11緊鄰著一藍寶石或碳化矽基底 1 2和一 AlxGa!-xN (X二0· 1-0.5)層13緊鄰氮化鎵層11，與基底 12位置相反。一成核層14被包含在介於基底12和氮化鎵緩 衝層1 1之間，以降低兩層之間的晶格不匹配。高電子移動 率電晶體10也包含源極，閘極和沒極接點丨5，1 6，1 7。在 AlxGai.xN裡的鋁成份產生一壓電電荷累積再與氮化鎵層的 介面以形成一二維電子氣（2E)EG)18。當在AlxGai xN層裡的 鋁成份增加時，壓電電荷也增加，導致增加高電子移動率 電晶體二維電子氣和轉導的優點。 然而’二維電子氣的移動率一般受限於介面粗糙度和在 氮化鎵和AlxGa^xN層11，13間介面的壓電散射，這是在 AlxGaNxN層13靠近介面處的局部不規則所造成的結果。 藉由一八^&1#(尸1或7二1)層取代八1而1.3(\二0.1-0.5)層 13，可以達到某些優點。氮化鋁（AlyGaiyN其中尸丨）和氮化 鎵間2.4 /〇晶格不匹配造成在兩層之間介面上的最大可能壓 電電何。使用一氮化鋁層也會減少層與層間的壓電散射並
579600 A7 —___ B7 五、發明説明（4 ^ '— 能限制二維電子氣移動率。 然而’铭氮化鎵和氮化鎵間的高晶格不匹配要求氮化 層的厚度應該小於50埃。若層較厚，元件的歐姆接觸會有 問題’層裡的材料品質開始降低，元件的可靠度減小，而 且材料更難長。然而，一具有50埃或更小的氮化鋁層的高 電子移動率電晶體易受高閘極洩漏所影響。 發明概要 本發明提供改良的具有改良的二維電子氣移動率之第三 方矢氮化物為主之兩電子移動率電晶體，而最好是由链氮化 鎵/氮化鎵所製成的。一根據本發明所構成的高電子移動率 電晶體包含一氮化鎵緩衝層，而在氮化鎵緩衝層上有一 AlyGai-yN層。一 AlxGai-xN障壁層被包含在AlyGaUyN層上，與氮 化鎵緩衝層的位置相反，AlyGai-yN層比AlxGai xN層具有一較 高的铭濃度。一二維電子氣形成於氮化鎵緩衝層與AjyGabN ， 層之間的界面。一較佳的AlyGai_yN層其y=1或yj而一較佳 的 AlxGabXN 障壁層其 . 5。 局電子移動率電晶體也具有各自的源極，〉及極與閘極接 點接到它的AlxGa^N障壁層。高電子移動率電晶體也可被 製k在一基底上’該基底可用一群材料包括藍寶石，竣化 矽，氮化鎵以及矽製成。基底放置在緊鄰著緩衝層，與 AlyGa^yN層位置相反。高電子移動率電晶體也在氮化鎵緩衝 層與層底間包含一核層。 高電子移動率電晶體氮化鎵層上的AlyGaNyN層在兩層間的 介面提供一高壓電電荷和減少壓電散射。AlyGa^N層應該很 « -. -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) ~ 一
裝 訂
線 579600
薄那是因為氮化鋁和氮化鎵間的高晶格不匹配。AWa』 層在薄的AlyGabyN層上保持低高電子移動率電晶體閘極洩 這些以及其他另外的特性和本發明的優點將在下面詳細 說明中出現這些技藝，同時附有一些圖，其中： _圖__式簡單說明
圖1是一先前技藝鋁氮化鎵/氮化鎵高電子移動率電晶體的 剖面圖； 圖2是一根據本發明鋁氮化鎵/氮化鎵高電子移動率電晶體 的一個具體實施例的剖面圖； 裝 圖3是圖2中鋁氮化鎵/氮化鎵高電子移動率電晶體的能帶 圃， 訂
線 圖4是一根據本發明的鋁氮化鎵/氮化鎵高電子移動率電晶 體的第二個具體實施例的剖面圖。 圖5是圖2中高電子移動率電晶體裡障壁層的剖面圖，使 用一數位方法製造而成；而 圖6是一根據本發明的鋁氮化鎵/氮化鎵高電子移動率電 晶體的第二個具體實施例的剖面圖，其中障壁層具有一凹 進的閘極結構。 發明詳細說明 圖2顯示一個根據本發明構成之一高電子移動率電晶體2〇 的一個具體實施例。它包括一基底22，此基底可用不同的 材料如藍寶石(ΑΙΑ3)，碳化矽（SiC)，氮化鎵（GaN)，或矽 (Si)製成。較佳的基底是一 4H多型碳化矽。也可以用其他
579600 A7 _______ B7 ________ 五、發明説明（6 ) 的多型碳化矽，包括3C，6H以及15R。 碳化矽的結晶晶格匹配比藍寶石更接近第三族氮化物並 使得第三族氮化物薄膜有更好的品質。碳化矽也有非常高 的熱傳導性導致碳化矽上第三族氮化物元件的全部输出功 率不會受限於基底的熱消耗（此種情況在有些藍寶石上的元 件是會發生的）。而且碳化矽基底的優點提供了元件分離與 減少寄生電容的能力使元件能夠商業化。碳化矽基底由北 卡羅萊娜（North Carolina)，達拉謨（Durham)的克里研究公司 (Cree Research Inc·)提出，而它們的製造方法在科學文獻以 及美國專利，Nos. Re· 34,861 ; 4,946,547 ;及 5,200,022 中提 出。 新的高電子移動率電晶體20可利用許多不同材料系統來 製作，但是最好是用第三族氮化物為基礎的材料系統。第 三族氮化物是指那些由氮和週期表中第三族氮化物所構成 的半導體化合物，這些第三族氮化物通常是鋁，鎵，以及 銦。這些化合物也可以是三元的以及第三位的化合物如鋁 氮化鎵和AIInGaN。在纖維鋅礦第三族氮化物中的自發性 及壓電偏振現象比在傳統的三族及二六族半導體化合物大 了將近10倍。 一成核層24可被包含在基底22以上減少高電子移動率電 曰曰體20中基底22和下一層之間的晶格不匹配。成核層24應 該大約為1000埃厚，雖然可用其他的厚度。它可由不同的 半導體材料製成，其中一個適合的材料為AlzGaizN (〇SzSl)，而較佳為氮化鋁（AUGauN，其中z==1)。 -11 · ϋ張尺度適财S S家標準(CNS) A4規格(21GX 297公爱) ----
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線 579600 A7 B7 五、發明説明（7 ) 一氮化鎵層26被包含在成核層24上，與基底22的位置相 反。氮化鎵層26應該大約是0-5微米厚的範圍，雖然可用其 他的厚度。在高電子移動率電晶體20較佳的具體實施例之 一中’氮化蘇層26為2微来厚。或者，敗化嫁層26可由 AlwGai_wN (〇£^v£_l)製成。 一 AlyGaNyN(y=l或y二1)層28被包含在氮化鎵層26上，與 成核層24的位置相反。層28應該小於50埃厚，但是在不同 的配製中可用其他的厚度。較佳的厚度大約是2〇埃。 (AlyGa^yN其中y=l)層28可由多個氮化鋁的單層形成，每個 單層大約是5-20埃厚的範圍。例如，一層28由4個厚5埃的 單層構成20埃厚。 一 AlxGai_xN障壁層30被包含在AlyGawN層28上，與氮化鎵 層26的位置相反。較佳的層3〇混合物具有〇£χ^〇5，雖然 混合物可以變化，x介於之間。層3〇應該在大約1〇〇到 1〇〇〇埃厚的範圍，雖然可用其他的長度。層30的厚度是取 決於層的鋁成份，鋁成份越高，層3〇就越薄。在高電子移 動率電晶體20的一個具體實施例中，層3〇大約是3〇〇埃厚 且具有一 AlxGaNxN (X二0.33)的成分。如果障壁層太薄（小於 大約1〇〇埃）則層30不會在高電子移動率電晶體2〇中產生一 有效的二維電子氣。 咼電子移動率電晶體20包括源極，汲極與閘極接點32， 3 4 , 3 6。源極和汲極接點3 2 , 3 4可由不同的材料製成，包 含但不受限於鈦，鋁或鎳的合金。閘極接點36也可以由不 同材料製成，包含但不受限於鈦，鉑，鉻·，鈦和鎢的合 、 -12- 579600 A7
金，或矽化鉑。 一-維電子氣38形成於AlyGai yN;f 28與氮化鎵層26之間 的接合面。如上所述’氮化铭（AlyGaiyN其中y=i)層廳氮 化鎵層26之間的2.4%晶格不匹配導致在兩層之間介面產生 最大可能壓電電荷。氮魅（AlyG〜N其中Μ)·並減少 層與層間的壓電散射以限制二維電子氣移動率。
裝 藉由具有-氮化鋁㈣⑽其卜”層以在氮化鎵㈣ 上，高電子移動率電晶趙的二維電子氣38增加了移動率。 藉由具有一較厚的AlxGa丨-χΝ30在氮化鋁（AlyGaiyN其中y = i) 層2 8上，南電子移動率電晶體2 〇不會發生高閘極洩漏，這 僅有氪化1呂（八1#&1々其中丫=1)層28會發生。
一根據本發明的高電子移動率電晶體2〇，有一 2〇埃 AlyGaNyN層（尸1)具有一 2 〇 〇埃AlxGai“N (χ=〇叫層在上面， 可有一二維電子氣7·45χ1〇12ζ平方公分的密度及2195 cm2/Vs的移動率。一高電子移動率電晶體2〇有一 “埃 AlyGai.yN層（y=l)具有一 2 3 〇 埃 AlxGai χΝ (χ=〇 33)層在上面， 可有一維電子氣l.lOxlO13 /平方公分的密度及2082 cmVVs的移動率。當AlxGai-xN障壁層中鋁成份增加時，二維 電子氣的表面密度增加。 圖3顯示圖2中高電子移動率電晶體20的能帶圖4〇，發生 在點42及垂直通過AlxGai-xN障壁層30，AlyGai_yN層28，二 維電子氣32及氮化鎵層26。每一層26，28及30具有一個別 的非零總和偏振Pi，P2及P3指向同一個方向。在AiyGai yN 層28中全部偏振的大小高於周圍層26及30，這是由於它的 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 579600 A7 B7 五、發明説明（9 ) 紹成份增加。此偏振梯度導致偏振產生的表面電荷在三層 之間的接面A及B。一正偏振表面電荷位於氮化鎵層26與 AlyGawN層28之間的接面。結果造成一非零電場在AiyGai.yN 層28。因此，在接面B具有AlyGai-yN層28之AlxGai_xN障壁層 30的導帶邊緣是位於氮化鎵層26的導帶邊緣之上的。中間 層28是相對地薄且幾乎對電子是透明的，即使層與層之間 的導帶不連續相對地大。因此，電子可由頂層轉移到底層 且在層26與層28之間的接面A形成一二維電子氣通道。此 交錯的能帶隙可藉由改變層裡的元素成份而在相同半導體 材料層之間形成。 圖4顯示一高電子移動率電晶體5〇的另一個具體實施例， 此高電子移動率電晶體是按照本發明製成的，也是由第三 族氮化物半導體材料構成的。一無意摻雜或半絕緣氮化鎵 緩衝層52被形成於一藍寶石基底54。一相對薄（〜1奈米）氮 化紹層56被形成於氮化鎵緩衝層52的頂端，然後被覆蓋以 石夕摻雜的氮化鎵層58。氮化铭層56的表面是以氮化蘇為終 止的60，以致所有層裡的自發性偏振皆指向基底54。另 外，層裡的壓電偏振指向與自發偏振相同的方向。自發及 壓電偏振的大小隨著層裡的鋁濃度而增加，且氮化鋁層5 6 具有最大的鋁濃度以及最高的總和偏振。圖3所顯示的交錯 能帶隙排列是由高電子移動率電晶體的層與層之間所構成 的，這些高電子移動率電晶體層具有一二維電子氣59形成 於氮化铭層與氮化鎵層之間的接面。高電子移動率電晶體 5 0也包含了源極，汲極與閘極接點62 , 64 , 66。 ____-14- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公爱〇 '~ -
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線 579600 A7 __B7 五、發明説明（10 ) 高電子移動率電晶體的結構是根據本發明可由所有第三 族氮化物製成且也可使用它們與磷砷及銻的合金。層的次 序應該是偏振的梯度導致中間非常薄的層裡產生一強烈的 電場。高電子移動率電晶體可以使用不同的製程製造，包 括但不限制於，有機金屬化學氣相磊晶法（MOCVD)，分子 束蠢晶法（MBE)或氣相蠢晶法（VPE)。AlxGa^N障壁層30 及AlyGa^yN層28可在氫氣、氮氣或具有氨氣的氣體中長成。 圖5顯示一具有類似於圖2中高電子移動率電晶體2〇中的 相同層30及28的AlxGa!-xN障壁層78以及一 AlyGai-yN層79的 高電子移動率電晶體70。然而，在本具體實施例中，障壁 層78是以一種數位方式製成以獲得所需的鋁和錁的濃度。 障壁層78具有多個層組，每一組有4層，再其中一層為氮化 銘層75而三層為氮化錁層76a-c。一具有4層組的障壁層 72 ’具有4層銘層75及12層氮化鎵層76a-c。使得整體障壁〜 層72，具有4層鋁層75及12層氮化鎵層76 a-c。使得整體障 壁層的槽度為25%鋁和75氮化鎵。同樣地，具有一層鋁和2 層氮化鎵，3層所構成的每個層組可以形成3 3 %鋁和6 7 %氮 化鎵的濃度。 藉由製造障壁層72使用此法，不同氣體的流動率不需要 被微調以達到所需的鋁和氮化鎵濃度。此製程也導致一致 障壁層72具有一更正確的材料的濃度且使得障壁層72中的 材料濃度具一致性。障壁層72可由一氮化鎵或氮化铭層作 為終止。此製程也可用來製造其他的高電子移動率電晶體 層。 — -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐）
裝 訂
579600 A7
圖6顯示根據本發明構成的一高電子移動率電晶體層“的 另一具體實施例。它具有一基底82，氮化鎵緩衝層84， AlyGai.yN (x=l或x：1l)層86，二維電子氣88，源極接點9〇 , 汲極接點92及閘極接點94，全部類似於圖2所示的高電子移 動率電晶體層20中的所有。然而，在本具體實施例中，障 壁層96由氮化鎵（AlxGai-xN其中χ = 〇)所構成。障壁層％可以 是η型，不管是一致型或是差異型的摻雜形式。由此組合障 壁層96可做的厚（500-1000埃），並可構成凹型閘極結構。 在一標準的平面高電子移動率電晶體結構中閘極，汲極與 源極接點下的電阻是相等的。障壁層96做的越厚，每一接 點下的電阻越小。然而，我們需要的是在閘極接點94下增 加電阻並且在源極和汲極接點9 〇和92下保持低的電阻。厚 的障壁層96可被蝕刻使得在閘極接點94下較薄。這會增加 閘極接點94下的電阻並無持源極和汲極接點9〇和92下的電 阻為最小值。 雖然本發明已經描述的相當詳細，參考某個較佳的構造 當中，其他的版本是可能的。高電子移動率電晶體的其他 層也可使用一數位層方法製造。因此，所附的申請專利範 圍的精神與範嗓不應該受限於規範中所描述的較佳的版 〇 _______ -16- 本紙k㈣財關家標準(CNS) Α4規格(靜297公爱)
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線

Claims (1)

  1. 579600 A8 B8 C8 D8
    1. 一種高電子移動率電晶體（HEMT)(20)，包含： 一層氮化鎵緩衝層（26); 一層八1#&1.小層（28)在該氮化鎵緩衝層（2 6)上； 一層AlxGai-xN障壁層（30)在該AlyGawN層（28)上與該氮 化鎵緩衝層（2 6)位置相反，該八1#&1-小層（28)比八14&1.3 障壁層（30)具有一較高的鋁濃度；並包含 一一維電子氣（2DEG)(38)形成於氮化鎵緩衝層（26)與 該AlyGa^yN層（28)之間的界面。 2·如申請專利範圍第1項之高電子移動率電晶體，其中該 AlyGaNyN層（28)包含AlyGa〖-yN (y=l 或大約=1)。 3·如申請專利範圍第1項之高電子移動率電晶體，其中該 AlxGabJSIp章壁層（30)包含AlxGai.xN(〇Sx幺〇·5)。 4. 如申請專利範圍第丨項之高電子移動率電晶體，另外包含 各自的源極，汲極和閘極接點（32，34，36)在該AlxGaNxN 障壁層（30)上。 5. 如申請專利範圍第1項之高電子移動率電晶體，另外包含 一基底（22)緊鄰著該緩衝層（26)，與該叫⑽小層㈤）位 置相反，該基底（22)可用一群材料包括藍寶石，碳化 矽，氮化鎵以及矽製成。 6·如申請專利範圍第1項之高電子移動率電晶體，另外包含 一成核層（24)介於該氮化鎵緩衝層（26)與該基底（22)之 間。 7·如申請專利範圍第4項之高電子移動率電晶體，其中該源 極和汲極接點（3 2，3 4，3 6)是由一種合金所製成的，此 •17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
    裝 訂
    579600 A8 B8 C8 ------—______D8 六、申請專利範圍 合金的族包含有鈦，鋁，以及錄。 8·如申請專利範圍第4項之高電子移動率電晶體，其中該問 極(36)是由一種材料所製成，此材料族包含鈦，鉑， 鉻，鈦和鎢的合金，和矽化鉑。 9.如申請專利範圍第！項之高電子移動率電晶體，其中該氮 化錁緩衝層（26)小於大約5微米厚。 10·如申凊專利範圍第！項之高電子移動率電晶體，其中該 AlyGa^yN層（28)小於大約5 〇埃厚。 11·如申凊專利範圍第1項之高電子移動率電晶體，其中該 AlxGa!-xN障壁層（30)大約是丨〇 〇到丨〇 〇 〇埃厚。 12·如申請專利範圍第4項之高電子移動率電晶體，其中該閘 極接點（36)下的電阻大於該源極和汲極接點（S2 , 3句下 的電阻。 / 13.如申請專利範圍第4項之高電子移動率電晶體，其中該障 壁層（26)在該閘極接點（36)下是較薄的。 14·如申請專利範圍第丨項之高電子移動率電晶體，其中該 AlxGaNxN障壁層（3〇)和該AlyGai yN層（Μ)是以數位 式製作的。 ' 15.—種以第三族氮化物為主之高電子移動率電晶體 (10)，包含： 一層半導體緩衝層（26); 一層高偏振半導體（28)在該高偏振層（28)上得該高偏 振層夾在該缓衝層和障壁層（26，30)之間，該層的每— 層具有一非零總和偏振指向相同的方向，該高偏層（2 $ ) •18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 579600 A B c D 六、申請專利範圍 中該偏振的大小大於該緩衝層和障壁層（26，30)的偏 振；並包含 一種一維電子氣（38)在該緩衝層（26)和該高偏振層（28) 間的介面。 16·如申請專利範圍第1 5項之高電子移動率電晶體，另外包 含各自的源極’没極和閘極接點（3 2，3 4，3 6 )連接到該 障壁層（30)。 17.如申請專利範圍第15項之高電子移動率電晶體，另外包 含一基底（22)緊鄰著該緩衝層（26)，與該高偏振層（28) 位置相反，該基底（2 2)可用一群材料包括藍寶石，碳化 矽，氮化鎵以及矽製成。 18·如申凊專利粑圍第15項之高電子移動率電晶體，另外包 含一成核層（24)介於該緩衝層（26)與該基底（22)之間。 19·如申請專利範圍第15項之高電子移動率電晶體，其中該 緩衝層（26)是由氮化鎵製成的。 2〇·如申請專利範圍第1 5項之高電子移動率電晶體，其中該 緩衝層（26)小於5微米厚。 21·如申請專利範圍第15項之高電子移動率電晶體，其中該 同偏振層半導體層（2 8)是由AlyGai.yN (y=i或大約=1)製成 的〇 22·如申請專利範圍第15項之高電子移動率電晶體，其中該 高偏振層半導體層（28)小於50埃厚。 23·如申請專利範圍第丨5項之高電子移動率電晶體，其中該 障壁層（3 0)是由AlxGaNxN(〇S^0.5)製成的。 -19-
    579600 A8 B8 C8 D8 六、申請專利範圍 24·如申請專利範圍第1項之高電子移動率電晶體，其中該障 壁層（30)為100到1〇〇〇埃厚。 25.—種高電子移動率電晶體（HEMT)(10)，包含： 一層第三族氮化物半導體材料的底層（26); 一層第三族氮化物半導體材料的中間層（28)在該底層 (26)上； 一層第三族氮化物半導體材料的頂層（3 〇)在該中間層 (28)上，與該底層（26)位置相反，該中間層（28)比該底 層和頂層（26，30)具有一較高的一第三族材料的濃度； 並包含 一種二維電子氣（38)在該中間層和底層（28，26)間的 介面。 26·如申請專利範圍第25項之高電子移動率電晶體，另外包 含各自的源極，沒極和閘極接點（3 2，3 4，3 6)連接到該 頂層（30)。 27·如申請專利範圍第25項之高電子移動率電晶體，另外包 含一基底（22)緊鄰著該底層（26)，與該中間層位置相 反0 28·如申凊專利粑圍第25項之高電子移動率電晶體，另外包 含一成核層（24)介於該底層（26)與該基底（22)之間。 29·如申請專利範圍第25項之高電子移動率電晶體，其中該 底層（2 6)是由氮化鎵製成的而且小於5微米厚。 30·如申請專利範圍第25項之高電子移動率電晶體，其中該 中間層（28)是由AlyGa^yN (y=l或大約=1)製成的而且小於 -20· 579600 A8 B8 C8 D8 六 申請專利範圍 5 0埃厚 31·如申請專利範圍第25項之高電子移動率電晶體，其中該 頂層（3 0)是由AlxGakNWSxSO.S)製成的而且為1〇〇到 1000埃厚。 32·如申請專利範圍第26項之高電子移動率電晶體，其中該 閘極接點（36)下的電阻大於該源極和汲極接點（32，3 4) 下的電阻。 33.如申請專利範圍第26項之高電子移動率電晶體，其中該 頂層（30)在該閘極接點（36)下是較薄的。 34·如申請專利範圍第25項之高電子移動率電晶體，其中該 中間層和頂層（2 8，30)是以數位式的方式製作的。 -21- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
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