JP5350585B2 - ミリメートル波動作のための窒化物ベースのトランジスタ - Google Patents
ミリメートル波動作のための窒化物ベースのトランジスタ Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 19
- 230000005669 field effect Effects 0.000 claims abstract description 35
- 125000006850 spacer group Chemical group 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims description 62
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 108091092878 Microsatellite Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
単一フィールドプレート構造を有する第1の例示のデバイスは、高純度半絶縁性SiC基板12を含む。基板12の上にAlNバッファ層14を形成する。AlNバッファ層14は、約200nmの厚さを有する。バッファ層12の上にGaNの第1チャネル副層16Aを提供する。第1チャネル副層16Aは約0.8μmの厚さを有する。第1チャネル副層16Aを、約1×1018/cm3の濃度のFeでドープする。第1チャネル副層16Aの上に、約0.8μmの厚さを有するGaNの第2チャネル副層16Bを形成する。第2チャネル副層16Bは、非意図的にドープされており、該層中に第1チャネル副層16Aからの距離にしたがって減少する残留濃度のFeドーパントを有する。
14 バッファ層
16 チャネル層
18 バリア層
20 ソース
22 ドレイン
24 ゲート
26 二次元電子ガスチャネル
62 スペーサ層
64 フィールドプレート
Claims (14)
- 第III族窒化物チャネル層と、
該第III族窒化物チャネル層の上のスペーサ層と、
ゲート接点であって、該第III族窒化物チャネル層の上にあり、かつゲート接点に印加される電圧に応じてチャネル層の導電率を変調するように設計され、30GHzを超える周波数においてチャネル層の導電率の変調を可能にするのに十分であるゲート長を有するゲート接点と、
ゲート接点と電気的に接続され、スペーサ層を横断してドレイン接点に向かう方向に距離LFDにわたって延び、LFDが少なくとも0.1μmであるフィールドプレートと、
該第III族窒化物チャネル層の上のソース接点およびドレイン接点と、
を含む電界効果トランジスタであって、少なくとも30GHzの周波数において動作する際に5W/mmより大きな電力密度を示すように設計され、
バリア層が、チャネル層上の第1バリア副層と、第1バリア副層上の第2バリア副層とを含み、第1バリア副層がAlNを含み、および第2バリア副層がAlxGa1-xN(式中、0.15≦x≦0.45)を含み、
前記チャネル層が、第1チャネル副層を含み、該第1チャネル副層がGaNを含み、かつ少なくとも1×1017/cm3の濃度のFeドーパントを有し、
前記チャネル層が、前記第1チャネル副層上の第2チャネル副層を更に含み、該第2チャネル副層がGaNを含み、前記第1チャネル副層からの距離にしたがって減少する濃度のFeドーバントを有することを特徴とする電界効果トランジスタ。 - 該チャネル層の上に第III族窒化物バリア層をさらに含み、ゲート接点およびスペーサ層はバリア層の上に形成され、およびバリア層およびチャネル層が、バリア層およびチャネル層の間の界面近傍のチャネル層内に、二次元電子ガスを協調的に誘起することを特徴とする請求項1に記載の電界効果トランジスタ。
- 第1バリア副層が4nm以下の厚さを有し、および第2バリア副層が10から50nmの厚さを有することを特徴とする請求項2に記載の電界効果トランジスタ。
- LFD が0.25μmであることを特徴とする請求項1に記載の電界効果トランジスタ。
- 該フィールドプレートが、スペーサ層を横断してソース電極に向かう方向に0.2μmの距離LFSにわたって延びていることを特徴とする請求項1に記載の電界効果トランジスタ。
- スペーサ層がSiNを含むことを特徴とする請求項4に記載の電界効果トランジスタ。
- 28Vのドレイン電圧において、 少なくとも5W/mmの電力密度を提供することを特徴とする請求項1に記載の電界効果トランジスタ。
- 30%より大きい電力付加効率を有することを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも40GHzの周波数において動作する際に、5W/mmより大きな電力密度を示すように設計されていることを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも30GHzの周波数において動作する際に、5W/mmより大きな電力密度を有することを特徴とする請求項1に記載の電界効果トランジスタ。
- 28Vのドレイン電圧において、 少なくとも5W/mmの電力密度が提供されることを特徴とする請求項10に記載の電界効果トランジスタ。
- 30%より大きな電力付加効率を有することを特徴とする請求項10に記載の電界効果トランジスタ。
- 少なくとも35GHzの周波数において動作する際に、8W/mmより大きな電力密度および30%より大きな電力付加効率を有することを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも40GHzの周波数において動作する際に、8W/mmより大きな電力密度および30%より大きな電力付加効率を有することを特徴とする請求項1に記載の電界効果トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/360,876 | 2006-02-23 | ||
US11/360,876 US7566918B2 (en) | 2006-02-23 | 2006-02-23 | Nitride based transistors for millimeter wave operation |
Publications (2)
Publication Number | Publication Date |
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JP2007227885A JP2007227885A (ja) | 2007-09-06 |
JP5350585B2 true JP5350585B2 (ja) | 2013-11-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006311951A Active JP5350585B2 (ja) | 2006-02-23 | 2006-11-17 | ミリメートル波動作のための窒化物ベースのトランジスタ |
Country Status (3)
Country | Link |
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US (1) | US7566918B2 (ja) |
EP (1) | EP1826823A3 (ja) |
JP (1) | JP5350585B2 (ja) |
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